WO2018194153A1 - Power semiconductor module, electronic component and method for producing power semiconductor module - Google Patents

Power semiconductor module, electronic component and method for producing power semiconductor module Download PDF

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Publication number
WO2018194153A1
WO2018194153A1 PCT/JP2018/016263 JP2018016263W WO2018194153A1 WO 2018194153 A1 WO2018194153 A1 WO 2018194153A1 JP 2018016263 W JP2018016263 W JP 2018016263W WO 2018194153 A1 WO2018194153 A1 WO 2018194153A1
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Prior art keywords
capacitor
conductor pattern
power semiconductor
semiconductor module
metal terminal
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PCT/JP2018/016263
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French (fr)
Japanese (ja)
Inventor
辰則 柳本
堀口　剛司
賢太 中原
裕二 宮崎
康貴 清水
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2019513697A priority Critical patent/JP6755386B2/en
Priority to CN201880020955.XA priority patent/CN110494977B/en
Publication of WO2018194153A1 publication Critical patent/WO2018194153A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power semiconductor module, an electronic component, and a method for manufacturing a power semiconductor module.
  • a power semiconductor device that constitutes a power converter has a structure including switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and free-wheeling diodes.
  • IGBTs Insulated Gate Bipolar Transistors
  • MOSFETs Metal-Oxide-Semiconductor Field Effect Transistors
  • free-wheeling diodes free-wheeling diodes.
  • an IGBT made of silicon (Si) is used as a switching element, and a pin diode is used as a free-wheeling diode.
  • SiC silicon carbide
  • SiC has a dielectric breakdown strength as high as about 10 times that of Si, and the thickness of the drift layer can be reduced to about 1/10 of a semiconductor element made of Si, a low on-voltage is expected. Furthermore, since a semiconductor element using SiC can operate even at high temperatures, application of SiC as a material for a power semiconductor element reduces the size compared to a conventional power semiconductor device using Si. High efficiency can be realized.
  • Snubber circuit is one of the means to suppress ringing.
  • a conventional power semiconductor module disclosed in Japanese Patent Laid-Open No. 2013-222950 includes a snubber capacitor as a means for suppressing ringing.
  • a capacitor used in a snubber circuit for example, in Japanese Patent Application Laid-Open No. 11-233373 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2015-8270 (Patent Document 3), a thermal shock that a ceramic capacitor receives due to a temperature change is disclosed. Therefore, a ceramic capacitor having a structure in which a terminal member made of a metal plate is soldered to a terminal electrode of a capacitor body is disclosed.
  • JP 2013-222950 A JP-A-11-233373 Japanese Patent Laid-Open No. 2015-8270
  • Patent Document 1 In the power semiconductor module disclosed in Patent Document 1, a printed board (upper board) and an insulating board (lower board) on which a semiconductor element is placed are connected in a circuit via a snubber capacitor. The lower substrate and the capacitor are soldered together.
  • the structure disclosed in Patent Document 1 uses two substrates and is very complicated, and the manufacturing method is complicated. For this reason, there is a problem that the reliability of the solder joint between the snubber capacitor and the substrate cannot be ensured during mounting of the power semiconductor module and during use after mounting.
  • the present invention has been made in order to develop the above-described problems, and provides a power semiconductor module that can suppress ringing that occurs during switching operation of a switching element and has high reliability. Objective.
  • the power semiconductor module includes at least one semiconductor element, a conductor pattern, at least one snubber circuit, a sealing body, an intermediate member, and a bonding material.
  • At least one semiconductor element is connected to the conductor pattern.
  • At least one snubber circuit is electrically connected to the conductor pattern.
  • At least one snubber circuit is a circuit in which a capacitor and a resistor are connected in series.
  • the sealing body seals at least one semiconductor element, conductor pattern, capacitor, and resistor.
  • the intermediate member is connected to the capacitor.
  • the bonding material connects the intermediate member to the conductor pattern.
  • the intermediate member connected to the capacitor is used at the junction between the capacitor and the conductor pattern, the junction between the conductor pattern and the capacitor can be easily mounted, and the junction is formed with high reliability. be able to. For this reason, ringing can be suppressed by the snubber circuit, and the occurrence of problems caused by defects in the junction between the capacitor and the conductor pattern can be suppressed. As a result, a highly reliable power semiconductor module can be obtained.
  • FIG. 5 is a schematic top view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG. 2.
  • FIG. 4 is an equivalent circuit diagram of a modification of the capacitor mounting portion shown in FIG. 3.
  • FIG. 3 is a schematic diagram illustrating a top surface and a cross section of a configuration example of a capacitor mounting portion of the power semiconductor module illustrated in FIG. 2. It is a schematic diagram which shows the cross section of the structural example of the resistor mounting part of the power semiconductor module shown in FIG.
  • FIG. 1 It is a schematic diagram which shows the cross section of the modification of the resistor mounting part of the power semiconductor module shown in FIG. It is a schematic diagram which shows the cross section of the modification of the semiconductor module for electric power which concerns on Embodiment 1 of this invention. It is a schematic diagram which shows the cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 1 of this invention. It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on Embodiment 2 of this invention. It is a schematic diagram which shows the cross section of the capacitor
  • FIG. 1 is a schematic diagram showing a power conversion circuit in the power conversion device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram showing a cross section and a part of the upper surface of the power semiconductor module according to the first embodiment of the present invention.
  • FIG. 5 is a schematic diagram illustrating a top surface and a cross section of the capacitor mounting portion of the power semiconductor module illustrated in FIG. 2.
  • 6 is a schematic diagram showing a cross section of the resistor mounting portion of the power semiconductor module shown in FIG.
  • the power semiconductor module according to this embodiment will be described with reference to FIGS.
  • the power conversion device is composed of one power semiconductor module 101 and drives the motor 102.
  • the power semiconductor module 101 three legs 105 a, 105 b, and 105 c are connected in parallel to the power supply 30.
  • Each leg 105a, 105b, 105c includes a positive-side switching element 103P, a positive-side reflux diode 104P, a negative-side switching element 103N, and a negative-side reflux diode 104N, respectively.
  • the positive-side switching element 103P and the positive-side reflux diode 104P that are connected in reverse parallel to each other constitute a positive-side power semiconductor element.
  • the negative-side switching element 103N and the negative-side return diode 104N connected in reverse parallel to each other constitute a negative-side power semiconductor element.
  • the midpoint, which is the connection point between the positive power semiconductor element and the negative power semiconductor element of each leg 105a, 105b, 105c, is connected to the motor 102, respectively.
  • the positive power semiconductor element and the negative power semiconductor element correspond to an example of at least one semiconductor element according to the present embodiment.
  • the snubber circuit 106 is connected in parallel to the series circuit of the positive power semiconductor element and the negative power semiconductor element.
  • the snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series.
  • the snubber circuit 106 is arranged only in the leg 105c.
  • the snubber circuit 106 may be arranged in another leg 105a, 105b, or any one of the legs 105a to 105c.
  • the snubber circuit 106 may be arranged in one, or the snubber circuit 106 may be arranged in each of all the legs 105a to 105c.
  • SiC-MOSFET as the positive electrode side switching element 103P and the negative electrode side switching element 103N (hereinafter also simply referred to as switching element), and SiC as the positive electrode side freewheeling diode 104P and negative electrode side freewheeling diode 104N (hereinafter also simply referred to as the freewheeling diode).
  • switching element SiC-MOSFET as the positive electrode side switching element 103P and the negative electrode side switching element 103N
  • SiC as the positive electrode side freewheeling diode 104P and negative electrode side freewheeling diode 104N
  • ringing may occur during a switching operation.
  • the ringing is caused by resonance due to the parasitic inductance of the power conversion circuit and the capacitance of the SBD.
  • Such ringing may cause damage to the module when the peak value of the voltage exceeds the rated voltage of the power semiconductor module.
  • the voltage in ringing can cause noise, it is necessary to suppress ringing as much as possible.
  • a snubber circuit 106 is installed in the power converter shown in FIG.
  • the snubber circuit 106 is mounted between the positive electrode of the positive power semiconductor element and the negative electrode of the negative power semiconductor element.
  • FIG. 2 shows a cross-section and a part of the upper surface of an example of the power conversion device in which the power conversion circuit shown in FIG. 1 is mounted.
  • the upper side of FIG. 2 shows a cross section of the power converter, and the lower side of FIG. 2 shows a part of the upper surface of the power converter.
  • the power conversion device according to the present embodiment mainly includes a base plate 201, a base insulating substrate 203, a semiconductor element 204, a snubber circuit, and a case 202.
  • the snubber circuit includes a capacitor 209 that is a ceramic capacitor and a resistor 210.
  • the base insulating substrate 203 mainly includes a plate-shaped insulating material 203b, conductor patterns 203a and 203d to 203h formed on the top surface of the insulating material 203b, and a conductor pattern 203c formed on the back surface of the insulating material 203b.
  • the semiconductor element 204 includes a SiC-MOSFET as the switching element 204a and a SiC-SBD as the freewheeling diode 204b.
  • the switching element 204a may be the positive electrode side switching element 103P or the negative electrode side switching element 103N in FIG.
  • the freewheeling diode 204b may be the positive electrode side freewheeling diode 104P or the negative electrode side freewheeling diode 104N in FIG.
  • the base insulating substrate 203 is joined to the upper surface of the base plate 201 with solder 207b (under-substrate solder). Specifically, the solder 207 b is in contact with the conductor pattern 203 c on the back surface side of the base insulating substrate 203 and the upper surface of the base plate 201.
  • a semiconductor element 204 is joined to the upper surface of the base insulating substrate 203 by solder 207a (under-chip solder).
  • the semiconductor element 204 and the terminal 208 installed in the case 202 are connected by a wiring member 206. Specifically, the wiring member 206 connected to the terminal 208 shown in FIG. 2 is connected to the conductor pattern 203h and the switching element 204a.
  • another wiring member 206 connected to, for example, the source electrode of the switching element 204a is connected to the reflux diode 204b and the conductor pattern 203d.
  • Another wiring member 206 connects the conductor pattern 203 g and the terminal 208.
  • the capacitor 209 and the resistor 210 are placed on the upper surface of the base insulating substrate 203 and connected in series. Specifically, the resistor 210 is disposed so as to connect the conductor pattern 203d and the conductor pattern 203e.
  • the conductor pattern 203e is connected to one electrode of the capacitor 209.
  • a conductor pattern 203f different from the conductor pattern 203e and the electrode on the other side of the capacitor 209 are connected. That is, the capacitor 209 is disposed so as to connect the conductor pattern 203e and the conductor pattern 203f.
  • the capacitor 209 and the resistor 210 are connected in series via the conductor pattern 203e.
  • the conductor pattern 203a is a positive electrode side drain electrode on which the semiconductor element 204 is mounted.
  • the withstand voltage of the capacitor 209 should be selected according to the rated voltage of the power semiconductor device. However, it is desirable that the capacitor 209 has a breakdown voltage equal to or higher than the rated voltage of the power semiconductor device.
  • ceramic capacitors may be connected in series to ensure the withstand voltage with a plurality of ceramic capacitors. At this time, the electrical characteristics of the plurality of capacitors 209 are preferably substantially the same. That is, as shown in the lower plan view of FIG. 2, the independent conductor pattern 203e, conductor pattern 203f, and conductor pattern 203g may be connected in series by the capacitor 209. Although not shown, the conductor pattern 203g is connected to the drain electrode on the negative electrode side.
  • a multilayer ceramic capacitor is assumed as an example of the capacitor 209. However, it has the function of accumulating and discharging electrostatic charges, which is the original function of a capacitor, and if it has sufficient capacitance and withstand voltage for use, a capacitor of any other configuration is used. be able to.
  • the capacitor 209 a thin film capacitor in which high dielectric constant materials are stacked may be used. Such a thin film capacitor can be formed by utilizing, for example, semiconductor manufacturing technology.
  • FIG. 3 is a top schematic view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG.
  • FIG. 4 is an equivalent circuit diagram of the capacitor mounting portion shown in FIG.
  • two capacitors 209 a and 209 b are mounted on the snubber circuit board 230.
  • three resistors 233a, 233b, and 210 are mounted on the snubber circuit board 230.
  • the snubber circuit substrate 230 includes a ceramic substrate 230a, conductor patterns 230c, 230d, 230e, and 230f disposed on the surface of the ceramic substrate 230a, and a conductor pattern (not shown) disposed on the back side of the ceramic substrate 230a. ).
  • the conductor patterns 230c, 230d, 230e, and 230f are disposed on the surface of the ceramic substrate 230a at a distance from each other.
  • the conductor patterns 230c, 230d, 230e, and 230f are arranged so as to extend substantially parallel to each other.
  • the conductor pattern 230f is electrically connected to the conductor pattern disposed on the back side of the ceramic substrate 230a through the through hole 232.
  • a plurality of through holes 232 are formed.
  • the capacitor 209a connects the conductor pattern 230c and the conductor pattern 230d.
  • the capacitor 209b connects the conductor pattern 230d and the conductor pattern 230e.
  • the resistor 233a connects the conductor pattern 230c and the conductor pattern 230d.
  • the resistor 233b connects the conductor pattern 230d and the conductor pattern 230e.
  • the resistor 210 connects the conductor pattern 230e and the conductor pattern 230f. As can be seen from FIG. 4, the two capacitors 209a and 209b and the resistor 210 are connected in series.
  • the resistor 233a is connected in parallel with the capacitor 209a.
  • the resistor 233b is connected in parallel with the capacitor 209b.
  • resistors 233a and 233b serving as voltage dividing resistors are connected in parallel to the capacitors 209a and 209b in order to evenly divide the voltages to the capacitors 209a and 209b.
  • the resistors 233a and 233b serving as voltage dividing resistors are resistors having a resistance value 1000 times or more that of the resistor 210 connected in series to the capacitors 209a and 209b.
  • the electrical characteristics of the resistors 233a and 233b, which are voltage-dividing resistors connected in parallel to the plurality of capacitors 209a and 209b, are substantially the same.
  • a case 202 is attached along the outer periphery of the base plate 201.
  • the inside of the case 202 is filled with a sealing body 205 so as to cover a part of the base plate 201, the base insulating substrate 203, the semiconductor element 204, the capacitor 209, the resistor 210, the wiring member 206, and the terminal 208.
  • the case 202 may be made of any resin, and is made of, for example, polyphenyl sulfide resin (PPS), polybutylene terephthalate resin (PBT), or polyethylene terephthalate resin (PET).
  • the insulating material 203b of the base insulating substrate 203 is not only a ceramic material such as alumina (Al 2 O 3 ), aluminum nitride (AlN), and silicon nitride (Si 3 N 4 ), but also a binder material such as an epoxy material or a liquid crystal polymer.
  • An organic insulating layer in which fillers such as silica, alumina, and boron nitride (BN) are kneaded may be used.
  • the conductor pattern 203a and the conductor pattern 203c are, for example, copper (Cu) films, but the surface of the copper film may be subjected to nickel (Ni) plating or silver (Ag) plating.
  • the conductor pattern 203a and the conductor pattern 203c may be those in which the surface of an aluminum (Al) film is subjected to Ni plating or Ag plating.
  • the semiconductor element 204 uses an SiC-MOSFET as the switching element 204a and an SiC-SBD as the freewheeling diode 204b.
  • the silicon (Si) -based Si-IGBT (Insulated Gate Bipolar Transistor) and Si-FWD (Free Wheeling Diode). ) May be used as the switching element 204a and the return diode 204b, respectively.
  • the wiring member 206 disposed on the semiconductor element 204 is, for example, an Al wire, and is joined to the surface of the semiconductor element 204 by wedge bonding. However, the wiring member 206 may be conductive, and for example, a Cu wire may be used.
  • the wiring member 206 may be a plate material instead of a wire shape.
  • a joining method different from wedge bonding may be used.
  • the wiring member 206 and the semiconductor element 204 are joined by solder, an adhesive containing Ag, or an Ag sintered material. You may do it.
  • the under-chip solder 207a is, for example, a solder material based on Sn, but the conductor pattern 203a on the surface side of the base insulating substrate 203 and the semiconductor element 204 may be joined by an Ag sintered material.
  • the sealing body 205 is, for example, silicon gel, but may have an insulating property sufficient for use of the power semiconductor module, and an epoxy material in which a filler is kneaded may be used as the sealing body 205.
  • the capacitor 209 and the conductor patterns 203e and 203f are connected by a solder joint portion 211. It is efficient and preferable that the solder joint portion 211 is formed at the same time in a process in which the semiconductor element 204 is soldered to the conductor pattern 203a or a process in which the base insulating substrate 203 is soldered to the base plate 201. Details of the soldering method will be described below.
  • soldering power modules there are concerns about voids and solder scattering (solder balls) due to the flux contained in the solder paste material, so it is common to apply a solder paste material containing flux. Few. Therefore, in soldering a semiconductor element, a soldering method in which solder is melted while reducing a solder material in a reducing atmosphere may be applied. When the soldering method under the reducing atmosphere is employed, a plate-like solder material is placed on the conductor pattern, and a semiconductor element is placed on the solder material to perform soldering. When the capacitor 209 is soldered to the same surface as the semiconductor element 204 on the base insulating substrate 203, soldering at the same time as the semiconductor element 204 does not increase the number of steps by mounting the capacitor 209, which is very efficient. Is.
  • a plate-like solder material is placed on the conductor pattern, and a soldered portion of the capacitor 209 is placed on the solder material.
  • the capacitor 209 is placed on the conductor patterns 203e and 203f, and a rectangular or spherical solder material is placed in the vicinity thereof.
  • the capacitor 209 is soldered by melting and spreading the solder material.
  • a member made of a solder resist or the like may be printed on the conductor patterns 203e and 203f in advance in order to limit the area where the solder spreads.
  • the method of mounting the capacitor 209 at the same time as the semiconductor element 204 has been described. However, when the base insulating substrate 203 is soldered to the base plate 201, the capacitor 209 is connected to the conductor patterns 203e and 203f by the same type of method. Also good.
  • the capacitor 209 has a density of about 2 g / cm 3 or more and 6 g / cm 3 or less, depending on the size and the number of built-in electrodes. At the time of soldering, the melted solder is pushed out from the region immediately below the capacitor 209 due to its own weight, and the thickness of the solder joint portion 211 is reduced. In addition, if the electrostatic capacitance of the capacitor 209 is in a numerical value range of, for example, 1 nF to 30 nF, the ringing suppression effect is large.
  • FIG. 5 shows a top view and a cross-sectional view illustrating details of a configuration example of a solder joint portion of the capacitor 209.
  • the upper view is a top view and the lower view is a cross-sectional view.
  • Capacitor 209 includes a capacitor body 501a and an external electrode 501b.
  • the capacitor body 501a corresponds to an example of the capacitor according to the present embodiment.
  • the external electrode 501b corresponds to an example of an intermediate member according to this embodiment.
  • the base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a and 504b formed on the upper surface of the ceramic substrate 504c, and a conductor pattern 504d formed on the lower surface of the ceramic substrate 504c.
  • the external electrode 501b is connected to the positive conductor pattern 504a and the negative conductor pattern 504b by a solder joint 211.
  • the solder joint portion 211 corresponds to an example of the joining material according to the present embodiment.
  • Solder resists 503a and 503b are formed on the positive conductor pattern 504a and the negative conductor pattern 504b to prevent the solder from spreading.
  • a capacitor 209 is mounted on the solder resist 503b.
  • the thickness of the solder resists 503a and 503b is, for example, not less than 10 ⁇ m and not more than 30 ⁇ m.
  • the melted solder is spread by the weight of the capacitor 209 to form a solder joint portion 211 connected to the ceramic capacitor external electrode 501b. Therefore, the thickness of the solder disposed between the ceramic capacitor external electrode 501b and the conductive pattern 504a of the base insulating substrate 203 can be ensured only approximately equal to the thickness of the solder resist 503b. For this reason, when the thickness of the solder resist 503b is not sufficient, there is a problem that only the thickness of the solder joint portion 211 that is insufficient to obtain the joint life required as the joint reliability of the power module can be secured. .
  • the resistor 210 may be directly formed between the positive conductor pattern 504 a and the negative conductor pattern 504 b of the base insulating substrate 203. Specifically, the resistor 210 is formed on the surface of the ceramic substrate 504c exposed between the conductor pattern 504a and the conductor pattern 504b at a portion where the end of the conductor pattern 504a and the end of the conductor pattern 504b face each other. To the end portions of the conductor patterns 504a and 504b. The resistor 210 is connected to the end portions of the conductor patterns 504a and 504b.
  • a paste agent that becomes the resistor 210 is disposed on the surface of the substrate material to be the base insulating substrate 203.
  • the paste agent is made of a conductor component such as ruthenium oxide (RuO 2 ) and a binder.
  • the paste agent is disposed in a region where the resistor 210 is to be formed using a printing method or the like.
  • the caking agent is used to adhere the resistor 210 to the ceramic substrate 504c.
  • the base material to which the paste agent is applied is baked to produce the base insulating substrate 203, and at the same time, the resistor 210 is formed by heating the paste agent.
  • the resistor 210 is not directly formed on the base insulating substrate 203 as described above, but as a single component in which the resistor film 506a is formed on the ceramic plate 506b as a support as shown in FIG. May be prepared.
  • the resistor 210 shown in FIG. 7 is disposed on the surface of the base insulating substrate 203.
  • the base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a, 504b, and 504e disposed on the surface of the ceramic substrate 504c, and a conductor pattern 504d disposed on the back surface of the ceramic substrate 504c.
  • the resistor 210 is connected to the surface of the conductor pattern 504e via a solder 508.
  • the solder 508 connects the ceramic plate 506b of the resistor 210 and the conductor pattern 504e.
  • the ceramic plate 506b is made of ceramics such as alumina (Al 2 O 3 ) and aluminum nitride (AlN).
  • the conductor pattern 504e may be connected to either the positive conductor pattern 504a or the negative conductor pattern 504b.
  • a plurality of bonding pads 506 c may be formed on the upper surface of the resistor 210.
  • the conductor pattern 504a for the positive electrode and the conductor pattern 504b for the negative electrode are connected so that the wiring material 507 bonded so as to connect the conductor pattern 504a and the bonding pad 506c, and the conductor pattern 504b and another bonding pad 506c.
  • the wiring member 507 bonded and the resistor 210 may be electrically connected.
  • the base plate 201 shown in FIG. 2 may be an AlSiC plate or a Cu plate. However, if the base plate 201 has sufficient strength to use the power semiconductor device, as shown in FIG. 2), that is, the conductor layer 203i on the back surface side of the base insulating substrate 203 may be exposed as it is.
  • the conductor layer 203i may be made of, for example, copper (Cu).
  • FIG. 8 is a schematic diagram showing a cross section of a modified example of the power semiconductor module described above.
  • the power semiconductor module shown in FIG. 8 basically has the same configuration as that of the power semiconductor module shown in FIG. 2, but does not include the base plate 201 (see FIG. 2), and the base insulating substrate.
  • the capacitor 209 in the power semiconductor module shown in FIG. 8 has a structure in which a metal terminal 306b is connected to a capacitor body 306a.
  • the metal terminal 306b is connected to the end face side of the capacitor body 306a.
  • the metal terminal 306b is formed to extend toward the lower side of the capacitor body 306a.
  • the lower end of the metal terminal 306b is connected to the conductor patterns 203e and 203f via the solder joints 211.
  • a space is formed between the capacitor body 306a and the insulating material 203b.
  • the capacitor body 306a corresponds to an example of the capacitor according to the present embodiment.
  • the metal terminal 306b corresponds to an example of an intermediate member according to the present embodiment.
  • the solder joint portion 211 corresponds to an example of the joining material according to the present embodiment.
  • the capacitor 209 is soldered to the conductor patterns 203e and 203f
  • the conductor patterns 203e and 203f to be soldered are made of Cu
  • the linear expansion coefficient between the conductor patterns 203e and 203f and the capacitor 209 Due to this difference, solidification shrinkage of the solder material during soldering, warping deformation of the base insulating substrate 203, and warping deformation of the base plate 201 (see FIG. 2) occur.
  • the capacitor 209 is broken or the joint life of the solder joint 211 is extremely reduced.
  • the resistor 210 is provided, there is a problem that the resistor 210 is peeled off from the conductor patterns 203d and 203e or the life of the solder joint portion of the resistor 210 is extremely reduced.
  • the inside of the power semiconductor module is sealed with the sealing body 205 made of the above-described epoxy resin, so that the epoxy resin becomes the conductor patterns 203a, 203d to 203f, the capacitor 209, and the resistor.
  • the epoxy resin becomes the conductor patterns 203a, 203d to 203f, the capacitor 209, and the resistor.
  • warping and deformation of the base insulating substrate 203 or the base plate 201 can be suppressed. For this reason, it is possible to reduce the stress generated in the capacitor main body portions 501a and 306a of the capacitor 209, the stress generated in the resistance film of the resistor 210, and the stress generated in the solder joint portion 211.
  • the capacitor 209 and the resistor 210 generate heat when energized. Due to the self-heating of the capacitor 209 and the resistor 210, the electrical characteristics of the capacitor 209 and the resistor 210 change. For this reason, it is necessary to efficiently release the heat caused by the above-described self-heating to the outside.
  • the heat dissipation of the power semiconductor module is improved by using an epoxy resin having a thermal conductivity higher than that of the gel material as the sealing body 205.
  • the thermal conductivity of the epoxy resin can be adjusted by the kind and content of fillers that are mixed. Further, as described above, the type and content of the filler are closely related to the linear expansion characteristics of the cured epoxy resin. For this reason, it is preferable that the thermal conductivity of the sealing body 205 is 0.5 W / m ⁇ K or more and 5 W / m ⁇ K or less.
  • a sealing body 205 made of an epoxy resin.
  • an epoxy resin whose filler material and filler content are adjusted so that the linear expansion coefficient of the epoxy resin when cured is close to the Cu linear expansion coefficient of 16.8 ppm / ° C. It is preferable to use as the body 205.
  • the warping behavior of the conductor layer 203i is caused by the structure on the conductor layer 203i, specifically, the insulating material 203b, the conductor patterns 203a, 203d to 203f, 203h, the semiconductor element 204 such as the switching element 204a and the free wheel diode 204b. Influenced by members. Therefore, it is not necessary to limit the linear expansion coefficient of the epoxy material constituting the sealing body 205 to 16.8 ppm / ° C., and by appropriately selecting the linear expansion coefficient in the range of 10 ppm / ° C. to 20 ppm / ° C. The warping behavior of the layer 203i may be suppressed.
  • an upper sealing body 215 made of a material different from the sealing body 205 is sealed. You may arrange on top. For example, an insulating material may be used as the upper sealing body 215.
  • the height of the capacitor 209 is arbitrarily selected depending on the capacitance required for the capacitor 209, and the height is, for example, in the range of 1 mm to 3.5 mm. Therefore, the height from the conductor pattern 203a to the upper surface of the sealing body 205 is preferably at least 1 mm.
  • the loop height of the wiring member 206 is preferably as low as possible because the wiring inductance increases as the loop height increases. For example, it is preferable that the height from the conductor pattern 203a to the top which is the highest part of the loop of the wiring member 206 is 4 mm or less.
  • the sealing body 205 seals the joint portion between the wiring member 206 and the semiconductor element 204 and the wiring member 206, only the effect that the joint portion of the wiring member 206 can be reinforced can be obtained. In addition, when an expensive epoxy material is used as the sealing body 205, an effect that the amount of the epoxy material used can be reduced is also obtained.
  • the same material as that of the sealing body 205 may be used for the sealing body 215, but a material having physical properties different from that of the sealing body 205 may be used.
  • silicon gel may be used as the material of the sealing body 215, and the sealing body 205 may be an epoxy resin in which at least one of the filler type and content is changed.
  • the sealing body is made of a different material in the middle of the loop of the wiring member 206, that is, when the interface between the sealing body 205 and the sealing body 215 is located in the middle of the loop of the wiring member 206, the sealing body Due to the difference in the linear expansion coefficient between 205 and the sealing body 215, the loop of the wiring member 206 receives stress.
  • the loop of the wiring member 206 in the vicinity of the interface is subjected to stress due to the expansion and contraction of the sealing bodies 205 and 215 that are repeatedly generated due to heat generation during use of the power semiconductor module. Fatigue failure may occur. Therefore, it is preferable that the height of the sealing body 205 is a height at which both the wiring member 206 and the capacitor 209 are covered.
  • the power semiconductor module shown in FIGS. 1 and 2 includes at least one semiconductor element 204, conductor patterns 203a, 203d to 203f, and at least one semiconductor element.
  • a snubber circuit 106 and a sealing body 205 are provided.
  • the semiconductor element 204 for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N.
  • At least one semiconductor element 204 is connected to the conductor pattern 203a.
  • At least one snubber circuit 106 is a circuit in which a capacitor body 306a (see FIG. 8) as a capacitor and a resistor 210 are connected in series.
  • the sealing body 205 seals at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, the capacitor body 306a, and the resistor 210.
  • the capacitor body 306a is connected to a metal terminal 306b (see FIG. 8) as an intermediate member.
  • the metal terminal 306b is connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material. As shown in FIG.
  • the sealing body 205 includes at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, a capacitor body 306a, a metal terminal 306b as an intermediate member, and a solder joint as a bonding material. 211 and the resistor 210 may be sealed. That is, the sealing body 205 may seal all the components arranged on the base insulating substrate 203.
  • the power semiconductor module shown in FIGS. 1 and 2 includes at least one positive-side power semiconductor element, that is, a positive-side switching element 103P and a positive-side reflux diode 104P, and at least one negative-electrode.
  • Negative electrode side switching element 103N and negative electrode side reflux diode 104N which are side power semiconductor elements, conductor pattern 203a, conductor patterns 203d to 203f as conductor layers, at least one snubber circuit 106, and sealing body 205 Prepare.
  • the conductor pattern 203a includes at least one positive-side power semiconductor element 103P and a positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and a negative-side reflux circuit.
  • the semiconductor element 204 which is one of the diodes 104N, is connected.
  • the conductor patterns 203d to 203f as the conductor layers are formed of the same layer as the conductor pattern 203a.
  • At least one snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series.
  • the sealing body 205 seals at least one positive power semiconductor element, at least one negative power semiconductor element, conductor patterns 203d to 203f as a conductor layer, a capacitor 209, and a resistor 210. At least one of the capacitor 209 and the resistor 210 is connected to conductor patterns 203d to 203f as conductor layers.
  • the sealing body 205 includes an epoxy resin.
  • the sealing body 205 since the epoxy resin is used as the sealing body 205, the deformation of the conductor patterns 203a, 203d to 203f, 230c to 230f can be suppressed by the sealing body 205. For this reason, it is possible to suppress the occurrence of stress due to the above deformation at the joint between the conductor patterns 203d to 203f, 230c to 230f and the capacitors 209, 209a, 209b or the resistor 210. As a result, a highly reliable power semiconductor module can be obtained.
  • the configuration of the power semiconductor module can be simplified as compared with the case where a substrate different from the substrate on which the power semiconductor element is mounted is prepared for the snubber circuit.
  • the capacitors 209a and 209b, the resistors 210, 233a, and 233b, etc. are provided on the snubber circuit board 230 in advance. Since the snubber circuit can be prepared by mounting the snubber circuit, the snubber circuit can be applied to power semiconductor modules having different configurations.
  • the sealing body 205 may have a thermal conductivity of 0.5 W / m ⁇ K to 5 W / m ⁇ K.
  • the sealing body 205 may have a linear expansion coefficient of 10 ppm / ° C. or more and 20 ppm / ° C. or less.
  • the heat of the capacitor 209 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it is possible to prevent the temperature of the capacitor 209 from rising excessively. As a result, the temperature characteristics of the capacitor 209 can be prevented from affecting the electrical characteristics of the power semiconductor module, and a power semiconductor module that exhibits stable electrical characteristics can be realized.
  • the resistor 210 when the resistor 210 generates heat during use of the power semiconductor module, the heat of the resistor 210 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it can prevent that the temperature of the resistor 210 rises excessively. As a result, it is possible to prevent the temperature characteristics of the resistor 210 from affecting the electrical characteristics of the power semiconductor module, and to realize a power semiconductor module that exhibits stable electrical characteristics.
  • the sealing body 205 is arranged so that the capacitor 209 is embedded. As shown in FIG. 9, the power semiconductor module further includes an upper sealing body 215 disposed on the sealing body 205.
  • the sealing body 205 is disposed in a region that contacts the constituent member of the power semiconductor module such as the capacitor 209, and an insulator other than the sealing body 205 is provided in a portion that does not directly contact the constituent member. Since the upper sealing body 215 made of is disposed, the amount of the sealing body 205 containing an epoxy resin can be reduced. Therefore, the manufacturing cost of the power semiconductor module can be reduced by using a lower cost material than the sealing body 205 as the upper sealing body 215.
  • the semiconductor element 204 which is at least one positive power semiconductor element and at least one negative power semiconductor element is formed of a wide band gap semiconductor.
  • the semiconductor element 204 is made of a wide band gap semiconductor, in addition to suppressing ringing, high-speed switching operation and high-temperature operation are possible.
  • the wide band gap semiconductor is one selected from the group consisting of silicon carbide (SiC), gallium nitride (GaN), diamond, and gallium oxide.
  • SiC silicon carbide
  • GaN gallium nitride
  • diamond gallium oxide
  • FIG. 10 is a schematic diagram showing a partial cross section of the power semiconductor module according to the second embodiment of the present invention.
  • the power semiconductor module shown in FIG. 10 basically has the same configuration as that of the power semiconductor module according to the first embodiment, but a ceramic capacitor with a metal terminal is applied as the capacitor 209.
  • Capacitor 209 mainly includes a capacitor body 306a including an external electrode formed on an end face, and a metal terminal 306b connected to the external electrode of capacitor body 306a.
  • the power semiconductor module according to the present disclosure includes at least one positive electrode side switching semiconductor element 103P and positive electrode side freewheeling diode 104P, which are positive electrode power semiconductor elements, and at least one negative electrode power semiconductor element.
  • Negative electrode side switching element 103N and negative electrode side reflux diode 104N conductor pattern 303a, conductor patterns 303b and 303c as conductor layers, and at least one snubber circuit.
  • a semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element is connected to the conductor pattern 303a.
  • the conductor patterns 303b and 303c are configured by the same layer as the conductor pattern 303a.
  • At least one snubber circuit is a circuit in which a capacitor 209 and a resistor 210 (see FIG. 1) are connected in series. At least one of the capacitor 209 and the resistor 210 is connected to the conductor patterns 303b and 303c.
  • Capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to capacitor body 306a. The metal terminal 306b is connected to the conductor patterns 303b and 303c.
  • the stress generated during soldering can be absorbed by the metal terminal 306b. For this reason, it becomes possible not only to prevent the capacitor main body 306a from cracking but also to reduce the stress generated at the solder joints 307 between the conductor patterns 303b and 303c and the metal terminal 306b. As a result, an unprecedented effect that the long-term reliability of the solder joint portion 307 is improved can be obtained.
  • an insulating layer 304 is formed on a base member 305 made of copper (Cu).
  • Conductive patterns 303a, 303b, and 303c are formed on the insulating layer 304.
  • a power semiconductor element 204 is bonded onto the conductor pattern 303 a by a die bond material 302.
  • a conductor pattern 303b and a conductor pattern 303c are formed as conductor patterns that are located on the same plane as the conductor pattern 303a on which the semiconductor element 204 is mounted and are configured by the same layer.
  • the conductor pattern 303b and the conductor pattern 303c are connected by a capacitor 209 that is a ceramic capacitor with a metal terminal.
  • the conductor pattern 303a and the conductor pattern 303b are connected by a wiring member 206, for example.
  • the capacitor 209 includes the capacitor main body 306a and a pair of metal terminals 306b connected to the external electrodes located at the connection portion 306c which is the end face of the capacitor main body 306a.
  • the connection portion 306c is a connection portion between the capacitor body 306a and the metal terminal 306b.
  • a tip portion located on the opposite side to the base portion connected to the capacitor main body 306a is a connection portion connected to the conductor patterns 303b and 303c.
  • tip part of the metal terminal 306b is soldered with the conductor patterns 303b and 303c.
  • solder joint portion 307 is formed between the connection portion of the metal terminal 306b and the conductor patterns 303b and 303c. Further, a solder restricting portion 308 made of a solder resist is formed on the conductor patterns 303b and 303c so that the solder does not spread out and the shape of the solder joint portion 307 does not become unstable. The solder restricting portion 308 is formed on the conductor patterns 303b and 303c in advance before soldering.
  • Capacitor 209 is a ceramic capacitor mainly composed of calcium zirconate, for example, but may be a ceramic capacitor mainly composed of barium titanate.
  • the capacitor 209 may be made of a material that can obtain desired electrical characteristics.
  • the size of the capacitor 209 can be arbitrarily selected as long as it has electrically required characteristics.
  • the size of the capacitor main body 306a is 3.2 mm ⁇ 1.6 mm (3216 size), 3.2 mm ⁇ 2.5 mm (3225 size), 4.5 mm ⁇ 3.2 mm (4532 size). Values such as 5.7 mm ⁇ 5.0 mm (5750 size) can be adopted.
  • the metal terminal 306b is a frame material mainly composed of copper, for example.
  • the metal terminal 306b may be made of a conductive material such as 42 alloy (Fe—Ni alloy) which is a general lead frame material.
  • the material of the metal terminal 306b is a material mainly composed of Cu having a higher thermal conductivity.
  • the external electrode located at the connection portion 306c between the capacitor body 306a and the metal terminal 306b is made of, for example, solder containing tin (Sn) as a main component.
  • solder containing tin (Sn) As a material of the external electrode, any material may be used as long as the melting point is not lower than that of the solder constituting the solder joint 307 at the tip of the metal terminal 306b.
  • the capacitor body 306a which is one ceramic capacitor, is connected to the metal terminal 306b.
  • a plurality of capacitor bodies 306a are stacked in multiple stages to form a set of metal terminals.
  • the capacitor body 306a may be configured by connecting the capacitor main body 306a in parallel by a pair of metal terminals 306b and 306c to satisfy the required electrical characteristics.
  • FIG. 11 is a schematic diagram showing a cross section of a capacitor of a power semiconductor module according to a modification of the second embodiment of the present invention. In FIG.
  • capacitor bodies 306a are stacked and connected by a set of metal terminals 306b and 306c to form one capacitor 209.
  • the number of capacitor main bodies 306a to be stacked may be two or four or more, and is appropriately selected so as to match the required electrical characteristics.
  • a set of metal terminals 306b and 306c corresponds to an example of an intermediate member according to the present embodiment.
  • the capacitor body 501a is mounted close to the conductor patterns 504a and 504b as shown in FIG.
  • a space 220 (see FIG. 5) formed between 209 and the ceramic substrate 504c, which is an insulating layer, is equivalent to the sum of the thicknesses of the conductor patterns 504a and 504b and the solder resist 503b.
  • the thicknesses and widths of the conductor patterns 504a and 504b are designed according to the current to be supplied to the conductor patterns 504a and 504b, but the thickness may be about 0.2 mm. It is common.
  • the thickness of the solder resists 503a and 503b is, for example, not less than 10 ⁇ m and not more than 30 ⁇ m. Therefore, the distance between the lower part of the capacitor 209 and the ceramic substrate 504c is about 0.21 mm to 0.23 mm.
  • the sealing body 205 having a high viscosity is applied, it is difficult to completely encapsulate the sealing body 205 without a gap in the space 220 between the lower portion of the capacitor 209 and the ceramic substrate 504c.
  • the gap in the sealing body 205 in this embodiment is assumed to have a diameter of 50 ⁇ m or more.
  • the space 220 may be filled with a highly permeable underfill agent to ensure insulation.
  • the underfill agent any insulator can be used. For example, an epoxy resin or a silicon resin may be used.
  • the conductor pattern as the conductor layer includes the conductor pattern 504a as the first conductor pattern and the second conductor pattern 504a spaced apart from the conductor pattern 504a. And a conductor pattern 504b as a conductor pattern.
  • the capacitor 209 is arranged so as to connect the conductor pattern 504a and the conductor pattern 504b.
  • the power semiconductor module is disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 504a, and the conductor pattern 504b, and includes an underfill agent as an insulator made of a material different from that of the sealing body 205.
  • the above-described underfill agent may be disposed, for example, in a space located under the capacitor body 306a of the capacitor 209 shown in FIG. 10 or FIG.
  • the underfill agent may be disposed, for example, so as to separate between the conductor pattern 303b and the conductor pattern 303c under the capacitor main body 306a.
  • the resin used as the sealing body 205 has poor fluidity, only the resin component in the sealing body 205 selectively flows into the space below the capacitor 209, and the filler component does not flow into the space. To do.
  • the thermal conductivity of the sealing body 205 is locally reduced and the linear expansion coefficient of the sealing body 205 is increased.
  • a defect that the capacitor 209 breaks after sealing may occur.
  • the viscosity of the epoxy resin used as the sealing body 205 is desirably smaller, but the viscosity varies depending on the type of filler and the content of the filler. Therefore, for example, the viscosity of the resin to be the sealing body 205 is preferably in the range of 10 Pa ⁇ s to 100 Pa ⁇ s.
  • the height H1 of the capacitor 209 with a metal terminal the wiring inductance due to the metal terminal 306b increases as the height H1 increases. Therefore, as shown in FIG. 10, the height H1 is preferably lower than the loop height H2 of the wiring member 206.
  • the capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to the capacitor body 306a.
  • the metal terminal 306b is connected to conductor patterns 303b and 303c as conductor layers.
  • the configuration of the power semiconductor module can be simplified as compared with the case, and since the junction portion between the conductor patterns 303b and 303c and the capacitor 209 can be easily mounted, the junction portion can be formed with high reliability. For this reason, ringing can be suppressed by the snubber circuit, and occurrence of problems due to defects in the joint portion between the capacitor 209 and the conductor patterns 303b and 303c can be suppressed.
  • the power semiconductor module includes a wiring member 206 connected to any one of at least one positive power semiconductor element and at least one negative power semiconductor element, that is, the semiconductor element 204. As shown in FIG. 10, the height H1 from the conductor patterns 303b and 303c to the top of the capacitor 209 is lower than the height H2 from the conductor patterns 303b and 303c to the top of the wiring member 206.
  • the inductance of the metal terminal 306b increases as the length of the metal terminal 306b connecting the capacitor body 306a and the conductor patterns 303b and 303c increases, the height H1 to the top of the capacitor 209 is set to the top of the wiring member 206.
  • the height H2 lower than the height H2, it is possible to prevent the metal terminal 306b from becoming too long.
  • an increase in inductance due to the metal terminal 306b can be suppressed, and an increase in wiring inductance of the entire power semiconductor module can be suppressed. For this reason, the surge voltage when ringing occurs can be suppressed.
  • FIG. 12 is a schematic diagram showing a cross section of the power semiconductor module according to the third embodiment of the present invention.
  • FIG. 13 is a schematic diagram showing a partial cross section of the power semiconductor module according to Embodiment 3 of the present invention shown in FIG.
  • the power semiconductor module shown in FIG. 12 basically has the same configuration as that of the power semiconductor module shown in FIG. 8, but is a ceramic capacitor with metal terminals that forms a snubber circuit as shown in FIG.
  • the capacitor 209 and the resistor 210 are not on the same layer as the semiconductor element 204, but are mounted on the snubber circuit board 230, and the snubber circuit board 230 is soldered to the conductor pattern 203j on the upper side of the power semiconductor module. The point of joining is different.
  • description will be made with reference to FIGS. 12 and 13.
  • FIG. 13 is an enlarged partial cross-sectional view of the periphery of the capacitor 209 with a metal terminal and the resistor 210 forming the snubber circuit of the power semiconductor module.
  • a capacitor 209 and a resistor 210 are mounted on a snubber circuit substrate 230.
  • the snubber circuit substrate 230 includes a ceramic substrate 230a which is an insulating substrate, conductor patterns 230c, 230d and 230e disposed on the surface of the ceramic substrate 230a, and a conductor pattern 230b disposed on the back side of the ceramic substrate 230a. including.
  • the conductor patterns 230c, 230d, and 230e are disposed on the surface of the ceramic substrate 230a at a distance from each other.
  • the arrangement of the conductor patterns 230c, 230d, and 230e can be arbitrarily determined. For example, they may be arranged so as to extend substantially parallel to each other.
  • the conductor pattern 230b disposed on the back surface of the ceramic substrate 230a is connected to the conductor pattern 203j on the insulating material 203b by solder 231.
  • the snubber circuit board 230 corresponds to an example of the intermediate member according to the present embodiment.
  • Capacitor 209 corresponds to an example of a capacitor according to this embodiment.
  • the solder 231 corresponds to an example of the bonding material according to the present embodiment.
  • a substrate made of another insulating material may be used as the insulating substrate instead of the ceramic substrate 230a.
  • a resin substrate may be used instead of the ceramic substrate 230a.
  • the capacitor 209 includes a capacitor main body 306a and a metal terminal 306b.
  • the capacitor 209 connects the conductor pattern 230c and the conductor pattern 230d.
  • the resistor 210 connects the conductor pattern 230d and the conductor pattern 230e.
  • the capacitor 209 and the resistor 210 are connected in series.
  • the conductor pattern 230e is connected to the semiconductor element 204 and the like by the wiring member 206.
  • the use of the ceramic capacitor with metal terminals as the capacitor 209 as described above suppresses the generation of voids due to the low fluidity of the resin to be the sealing body 205. You can get an unprecedented effect.
  • a capacitor 209 with a metal terminal and a resistor 210 are connected in series to the conductor patterns 230c, 230d, and 230e on the upper side of the snubber circuit board 230.
  • the conductor pattern 230c includes at least one positive-side power semiconductor element 103P and positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and negative-side reflux diode.
  • a semiconductor element 204 which is one of 104N is connected.
  • the ceramic substrate 230a is a substrate made of an arbitrary insulating material.
  • the ceramic substrate 230a is a substrate made of alumina (AL 2 O 3 ), aluminum nitride (AlN), silicon nitride (SiN), or the like.
  • the resistor 210 is formed by disposing a paste material such as ruthenium oxide (Ru 2 O) to be the resistor 210 on the surface of the ceramic substrate 230a using a printing method or the like.
  • the Ag paste material may be disposed on the front surface and the back surface of the ceramic substrate 230a by a printing method or the like. By firing the Ag paste material arranged in this way, the upper conductor patterns 230c, 230d, 230e and the lower conductor pattern 230b can be obtained.
  • the snubber circuit board can be obtained by mounting the capacitor 209 on the snubber circuit board 230 thus obtained by soldering in a process different from the manufacturing process of the power semiconductor module. Further, in the step of soldering the semiconductor element 204 of the power semiconductor module to the conductor pattern 203a, the snubber circuit board on which the capacitor 209 is mounted is simultaneously connected to the conductor pattern 203j. Further, the wiring member 206, the case 202, and the like are connected to the base insulating substrate 203 on which the snubber circuit board and the semiconductor element 204 are mounted, and the sealing body 205 is formed so as to cover the semiconductor element 204 and the like. The power semiconductor module shown is obtained.
  • the method for manufacturing a power semiconductor module is a snubber that is a circuit in which a capacitor body 306a as a capacitor and a resistor 210 are connected in series.
  • a method of manufacturing a power semiconductor module including a circuit comprising a step of connecting a capacitor to an intermediate member on which a snubber circuit is formed.
  • the intermediate member includes a ceramic substrate 230a as an example of an insulating substrate having a surface, and conductor patterns 230b, 230c, 230d, and 230e that are conductor patterns for a snubber circuit formed on the surface of the ceramic substrate 230a.
  • the method for manufacturing a power semiconductor module further includes a step of placing a ceramic substrate 230a in which a capacitor body 306a is connected to conductor patterns 230c and 203d on a base insulating substrate 203 having a surface. On the surface of the base insulating substrate 203, at least one positive power semiconductor element and at least one negative power semiconductor element 204, at least one positive power semiconductor element and at least one negative power element Conductor patterns 203a, 203h, and 203j to which any one of the semiconductor elements 204 as the side power semiconductor elements is connected are arranged.
  • the ceramic substrate 230 is connected to the conductor pattern 203 j of the base insulating substrate 203. After that, by performing steps such as installation of the case 202 and the wiring member 206 and formation of the sealing body 205, a power semiconductor module incorporating a snubber circuit as shown in FIG. 12 is obtained.
  • the snubber circuit board 230 can be used as it is for a plurality of types of power semiconductor modules having different configurations. Therefore, when the arrangement of the power semiconductor element 204 and the layout of the wiring member 206 are changed, it is not necessary to redesign the snubber circuit, and the man-hour and cost required for designing the power semiconductor module can be reduced.
  • FIG. 14 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • the power semiconductor module including the snubber circuit board 230 shown in FIG. 14 has basically the same configuration as the power semiconductor module shown in FIGS. 12 and 13, but the configuration of the snubber circuit board 230 is the same. This is different from the power semiconductor module shown in FIGS. That is, in the power semiconductor module shown in FIG. 14, in the snubber circuit substrate 230, a through hole 232 that penetrates the ceramic substrate 230a from the conductor pattern 230e toward the lower conductor pattern 230b is formed.
  • the conductor pattern 230e and the conductor pattern 230b are connected by the through hole 232 or a via filled in the through hole 232 with a conductor.
  • the snubber circuit board 230 and the upper conductor pattern 203j of the power semiconductor module are connected by solder 231.
  • the conductor pattern 203j is connected to the conductor pattern 203a (see FIG. 12) on the upper side of the power semiconductor module through the wiring member 206.
  • the power semiconductor module shown in FIG. 14 can obtain the same effects as those of the power semiconductor module shown in FIG. 12 and FIG. Further, in the power semiconductor module shown in FIG. 14, by providing the through hole 232, it is not necessary to secure an area for joining the wiring member 206 on the conductor pattern 230 e on the upper side of the snubber circuit substrate 230. Therefore, the area of the conductor pattern 230e can be reduced, and the snubber circuit board 230 can be reduced in size. Further, by installing the through hole 232 in the vicinity of the resistor 210, it is possible to efficiently dissipate heat generated when a current flows through the snubber circuit in the direction of the base insulating substrate 203 of the power semiconductor module.
  • FIG. 15 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • FIG. 15 corresponds to FIG.
  • the power semiconductor module disclosed in FIG. 15 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 13, but is not a capacitor 209 with metal terminals disclosed in FIG.
  • the power semiconductor module shown in FIG. 13 is different from the power semiconductor module shown in FIG. 13 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided.
  • the reliability required for the power semiconductor module can be ensured without installing the metal terminal 306b on the capacitor 209 as shown in FIG.
  • the ceramic substrate 230a having a ceramic support as an insulator is described.
  • the snubber circuit is formed on a circuit board having a resin support such as a printed circuit board, By sealing with the sealing body 205 by an epoxy resin etc., the stress which generate
  • FIG. 16 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • FIG. 16 corresponds to FIG.
  • the power semiconductor module disclosed in FIG. 16 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 14, but is not a capacitor 209 with metal terminals disclosed in FIG.
  • the power semiconductor module shown in FIG. 14 is different from the power semiconductor module shown in FIG. 14 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided. Even with such a configuration, the same effect as that of the power semiconductor module disclosed in FIG. 14 can be obtained. Further, the same effect as that of the power semiconductor module shown in FIG. 15 can be obtained.
  • the capacitor 209 by mounting the capacitor 209 on the ceramic substrate 230a having a linear expansion coefficient close to that of the ceramic capacitor, the stress generated in the solder joint portion 211 of the capacitor 209 is reduced. For this reason, it becomes possible to improve the joining reliability of the capacitor 209.
  • the solder restricting portion 308 as shown in FIG. 11 is formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor body 306b. May be.
  • the solder restricting portion 308 as an insulator may be made of a material different from that of the sealing body 205.
  • the solder resist 503b shown in FIG. 5 may be formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor 209. Instead of the solder resist 503b as an insulator, another insulator may be disposed at the position.
  • FIG. 17 is a schematic diagram showing a partial cross section of a capacitor and an upper surface of a connection portion of a power semiconductor module according to Embodiment 4 of the present invention.
  • the power semiconductor module shown in FIG. 17 basically has the same configuration as that of the power semiconductor module according to the second embodiment. However, as shown in FIG. 17, the conductor pattern 404 is connected to the metal terminal 306b of the capacitor 209. The configuration of the connecting portion 401c to be connected is different. This will be described below. Note that the upper diagram in FIG. 17 shows a partial cross section of the capacitor and the connection portion, and the lower diagram shows a top view of the connection portion.
  • a capacitor 209 which is a ceramic capacitor with a metal terminal, mainly includes a capacitor body 306a and a metal terminal 306b.
  • a connection portion 401c with the conductor pattern 404 is formed at the tip of the metal terminal 306b.
  • the metal terminal 306b has a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the direction in which the connecting portion 401c extends intersects the direction in which the main body side portion 401b extends.
  • the angle at which the main body side portion 401b and the connecting portion 401c intersect is preferably 80 ° to 100 °, may be 85 ° to 95 °, and may be 90 °.
  • the connecting portion 401c is provided with a convex portion 401d in order to ensure the solder thickness T1 of the solder joint portion 402.
  • the convex portion 401d is, for example, a portion obtained by plastic deformation of a part of the connecting portion 401c into a convex shape.
  • the convex portion 401d may be formed by arranging an arbitrary material such as a conductor or an insulator in a convex shape on the surface of the connection portion 401c.
  • a solder resist 403 is printed on the surface of the conductor pattern 404 in order to stabilize the shape of the solder joint portion 402.
  • the plurality of solder resists 403 are disposed so as to sandwich the region where the connection portion 401 c is disposed in order to define the outer periphery of the solder joint portion 402.
  • the convex portion 401d of the connecting portion 401c of the metal terminal 306b may be formed by pressing the metal terminal 306b in a lead frame state before connecting the metal terminal 306b to the capacitor body 306a.
  • FIG. 18 to 23 are schematic views showing the top surface of the capacitor connecting portion of the power semiconductor module according to the modification of the fourth embodiment of the present invention, and show a modification of the configuration of the connecting portion 401c.
  • the convex portion 401d may be arranged at a position shifted from the center in the connection portion 401c of the metal terminal 306b.
  • a plurality of convex portions 401d for example, two convex portions 401d may be arranged on the connecting portion 401c.
  • the number of convex portions 401d arranged in the connecting portion 401d may be four or more.
  • the direction which provided the some convex part 401d can suppress generation
  • the height of the convex portion 401d only needs to secure a thickness T1 that can sufficiently secure the bonding reliability of the solder joint portion 402.
  • the height (thickness T1) of the convex portion 401d is set to 50 ⁇ m or more and 300 ⁇ m or less. be able to.
  • the convex portion 401d shown in FIG. 17 was formed by plastically deforming the connecting portion 401c into a protruding shape, but as shown in FIG. 21, a through hole is formed at the tip portion of the convex portion 401d. Also good.
  • the convex portion 401d of the connecting portion 401c shown in FIG. 21 forms a through hole by punching a part of the portion that should become the convex portion 401d when the connecting portion 401c is pressed.
  • the punching direction at the time of the press working may be a direction from the mounting surface side where the capacitor main body 306a is connected to the metal terminal 306b toward the surface side in contact with the conductor pattern 404.
  • the return at the time of punching occurs on the side of the surface in contact with the conductor pattern 404, so that the return becomes the convex portion 401d.
  • the return height at the time of punching may be 30 ⁇ m or more and 300 ⁇ m or less.
  • the number of through holes should just be one or more, and it is desirable to provide a plurality of convex portions 401d in which the through holes are formed.
  • the bonding area between the metal terminal 306b and the solder increases as compared with the conventional case. As a result, not only the bonding strength between the metal terminal 306b and the conductor pattern 404 is improved, but also the bonding reliability can be improved.
  • the angle ⁇ 2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an acute angle.
  • an angle ⁇ 1 formed between the connecting portion 401c and the surface of the conductor pattern 404 on the connecting portion side between the connecting portion 401c and the main body side portion 401b also exceeds 0 °.
  • connection portion 401c is inclined with respect to the surface of the conductor pattern 404, the thickness of the solder constituting the solder joint portion 402 can be increased. In addition, it is possible to obtain an effect that it is easy to determine how much the solder 402 has been wetted by the connection portion 401c by visual inspection.
  • the angle ⁇ 2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an obtuse angle.
  • an angle ⁇ 3 formed between the connection portion 401c and the surface of the conductor pattern 404 on the front end side of the connection portion 401c also exceeds 0 °.
  • the thickness of the solder constituting the solder joint portion 402 can be increased as in the configuration shown in FIG.
  • solder material When a rectangular or spherical solder material is placed in the vicinity of the capacitor 209 and soldered, the molten solder material must be wet and spread so that the solder material is wet and spread under the connection portion 401c of the metal terminal 306b. . Also in this case, it is difficult to secure the solder thickness under the connection portion 401c for obtaining sufficient bonding reliability. Therefore, as shown in FIGS. 17 to 21, by providing the convex portion 401d on the lower surface (back surface) of the connecting portion 401c of the metal terminal 306b, it is possible to sufficiently secure the thickness of the solder under the metal terminal 306b.
  • the metal terminal 306 b includes a connection portion 401 c connected to the conductor pattern 404.
  • a protruding portion 401d having a shape protruding toward the conductor pattern 404 is formed on a part of the connecting portion 401c.
  • the power semiconductor module includes a solder joint 402 including solder as a conductive joint member disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
  • the convex portion 401d is formed in a part of the connecting portion 401c, the thickness of the solder as the joining member can be ensured by the protruding height of the convex portion 401d. As a result, the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a through-hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c.
  • the solder as a joining member can be arrange
  • the metal terminal 306b includes a connection portion 401c and a main body side portion 401b.
  • the connection part 401 c is connected to the conductor pattern 404.
  • the main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
  • the metal terminal 306b includes a connection portion 401c and a main body side portion 401b.
  • the connection part 401 c is connected to the conductor pattern 404.
  • the main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
  • the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when solder is disposed as a joining member between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a capacitor 209 as an electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer. As shown in FIGS. 17 to 21, a convex portion 401d is formed on a part of the connecting portion 401c.
  • the convex portion 401d is formed on a part of the connecting portion 401c, when the conductor pattern 404 and the connecting portion 401c are connected via solder as a joining member, the convex portion 401d
  • the thickness of the solder can be ensured by the protruding height.
  • the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a through hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c.
  • solder can be disposed inside the through hole 401e, the contact area between the solder and the connection portion 401c can be increased, and the reliability of the joint structure can be further increased.
  • the electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
  • the electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
  • the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when the solder as the joining member is disposed between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • the power semiconductor module includes at least one positive-side power semiconductor element 103P and positive-side return diode 104P, and at least one negative-side power.
  • One of at least one positive power semiconductor element and at least one negative power semiconductor element is electrically connected to the conductor pattern.
  • Capacitor 209 is electrically connected to the conductor pattern.
  • the thickness of the joining member such as solder is sufficiently increased. It can be secured. As a result, it is possible to obtain a power semiconductor module capable of extending the service life with improved reliability of the joint structure.
  • the power semiconductor module includes a sealing body 205 (see FIG. 2).
  • the sealing body 205 seals the semiconductor element 204 corresponding to at least one positive power semiconductor element and at least one negative power semiconductor element, and the capacitor 209 as an electronic component.
  • the sealing body contains an epoxy resin.
  • the power semiconductor module includes a conductor pattern 404 as a conductor layer.
  • the conductor pattern 404 is composed of the same layer as the conductor pattern on which the semiconductor element 204 is mounted.
  • a capacitor 209 as an electronic component is connected to the conductor pattern 404.
  • the capacitor 209 as an electronic component is connected to the conductor pattern 404 formed of the same layer as the conductor pattern, a substrate different from the substrate on which the conductor pattern or the like is formed is replaced with a capacitor as an electronic component.
  • the configuration of the power semiconductor module can be simplified as compared with the case of using for mounting 209, and the bonding portion between the conductor pattern 404 and the capacitor 209 as an electronic component can be easily mounted, so that the bonding portion is highly reliable. Can be formed.
  • an underfill agent may be disposed in a space located under the capacitor body 306a.
  • the underfill agent may be made of a material different from that of the sealing body 205.
  • the power semiconductor module includes at least one semiconductor element 204, conductor patterns 203a, 203e, 203f, 203j, and at least one.
  • the semiconductor element 204 for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N.
  • At least one semiconductor element 204 is connected to the conductor pattern 203a.
  • At least one snubber circuit 106 is electrically connected to the conductor pattern 203j (see FIG. 12) or the conductor pattern 203d (see FIG. 8).
  • the at least one snubber circuit 106 is a circuit in which the capacitor 209 in FIG. 12 as a capacitor or the capacitor main body 306a in FIG.
  • the sealing body 205 seals at least one semiconductor element 204, the conductor patterns 203a, 203e, 203f, and 203j, the capacitor 209 in FIG. 12 as a capacitor, or the capacitor body 306b and the resistor 210 in FIG.
  • the snubber circuit board 230 (see FIG. 12) or the metal terminal 306b (see FIG. 8) as an intermediate member is connected to the capacitor 209 in FIG. 12 or the capacitor body 306b in FIG.
  • a solder 231 (see FIG. 12) or a solder joint portion 211 (see FIG. 8) as a joining material connects the member to the conductor patterns 203j, 203e, and 203f.
  • At least one snubber circuit 106 may include at least one capacitor 209b as an additional capacitor and resistors 233a and 233b as parallel resistors, as shown in FIGS. .
  • At least one additional capacitor 209 b may be connected in series with the capacitor 209 a and the resistor 210.
  • Resistors 233a and 233b as parallel resistors may be connected in parallel with each of capacitor 209a and at least one additional capacitor 209b.
  • the intermediate member may include a ceramic substrate 230a as an insulating substrate and conductor patterns 230c to 230e as snubber circuit conductor patterns.
  • Ceramic substrate 230a has a surface.
  • the conductor patterns 230c to 230e may be formed on the surface of the ceramic substrate 230a.
  • the capacitor 209 may be connected to the snubber conductor patterns 230c and 230d.
  • the snubber circuit conductor pattern may include a conductor pattern 230c as a first conductor pattern and a conductor pattern 230d as a second conductor pattern.
  • the conductor pattern 230d is disposed at a distance from the conductor pattern 230c.
  • the capacitor 209 may be disposed so as to connect the conductor pattern 230c and the conductor pattern 230d.
  • the power semiconductor module may include an underfill agent as an insulator.
  • the insulator may be disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 230c, and the conductor pattern 230d, and may be made of a material different from that of the sealing body 205.
  • the capacitor 209 may include a capacitor body 501a and an external electrode 501b formed on the surface of the capacitor body 501a, as shown in FIG.
  • the external electrode 501b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
  • the capacitor 209 may include a capacitor main body 306a and a metal terminal 306b connected to the capacitor main body 306a.
  • the metal terminal 306b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
  • the intermediate member may include a metal terminal 306b connected to a capacitor body 306a as a capacitor as shown in FIG.
  • the metal terminal 306b may be connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material.
  • the conductor pattern may include a conductor pattern 303b as a first conductor pattern and a conductor pattern 303c as a second conductor pattern, as shown in FIG.
  • the conductor pattern 303c may be arranged at a distance from the conductor pattern 303b.
  • the capacitor 209 may be disposed so as to connect the conductor pattern 303b and the conductor pattern 303c.
  • the power semiconductor module may include an underfill agent as an insulator. The underfill agent may be disposed in a space surrounded by the capacitor 209, the conductor pattern 303b, and the conductor pattern 303c, and may be made of a material different from that of the sealing body 205.
  • the metal terminal 401b may include a connection portion 401c connected to the conductor pattern 404 as shown in FIGS.
  • a protruding portion 401d having a shape protruding toward the conductor pattern 404 may be formed on a part of the connecting portion 401c.
  • the solder joint portion 402 as a joining material may be a conductive material disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
  • a through hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the metal terminal includes a connection portion 401c connected to the conductor pattern 404 and a main body connected to the connection portion 401c and connected to a capacitor main body 306a as a capacitor.
  • the side portion 401b may be included.
  • the extending direction of the connecting portion 401c may intersect the extending direction of the main body side portion 401b.
  • the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an acute angle.
  • the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an obtuse angle. Further, the angle ⁇ 2 may be a right angle.
  • the power semiconductor module may further include a wiring member 206.
  • the wiring member 206 may be connected to at least one semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element. As shown in FIG. 10, the height H1 from the conductor pattern 303c to the top of the capacitor 209 may be lower than the height H2 from the conductor pattern 303b to the top of the wiring member 206.
  • the present disclosure is advantageously applied to a ceramic electronic component capable of stabilizing the bonding quality at the time of mounting and a power semiconductor module in which the ceramic electronic component is mounted and an IGBT, a MOSFET, or the like is used as a switching element.

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Abstract

Provided is a power semiconductor device which is capable of suppressing ringing that occurs during a switching operation of a switching element, and which has high reliability. A power semiconductor module according to the present invention is provided with: a semiconductor element (204); conductor patterns (203a, 203d-203f); a snubber circuit; a sealing body (205); a metal terminal (306b) that functions as an intermediate member; and a solder bonding part (211) that functions as a bonding material. The semiconductor element (204) is connected to the conductor patterns (203a, 203d-203f). The snubber circuit (106) is a circuit wherein a capacitor main body part (306a) and a resistor (210) are connected in series with each other. The sealing body (205) seals the semiconductor element (204), the conductor patterns (203a, 203d-203f, 203h), the capacitor main body part (306a) and the resistor (210). The metal terminal (306b), which is connected to the capacitor main body part (306a), is connected to the conductor patterns (203e, 203f) by means of the solder bonding part (211).

Description

電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法Power semiconductor module, electronic component, and method for manufacturing power semiconductor module
　この発明は、電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法に関する。 The present invention relates to a power semiconductor module, an electronic component, and a method for manufacturing a power semiconductor module.
　電力変換器を構成する電力用半導体装置は、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ　Ｇａｔｅ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）やＭＯＳＦＥＴ（Ｍｅｔａｌ－Ｏｘｉｄｅ－Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　Ｆｉｅｌｄ　Ｅｆｆｅｃｔ　Ｔｒａｎｓｉｓｔｏｒ）等のスイッチング素子と還流ダイオードとを備えた構造を有する。一般には、珪素（Ｓｉ）を材料としたＩＧＢＴをスイッチング素子として、ｐｉｎダイオードを還流ダイオードとして用いる。近年、Ｓｉよりワイドバンドギャップを有する炭化珪素（ＳｉＣ）を用いた電力用半導体装置が開発されている。ＳｉＣは絶縁破壊強度がＳｉの約１０倍と高く、ドリフト層の厚みをＳｉからなる半導体素子の約１／１０に低減し得る事から低オン電圧化が期待されている。さらに、ＳｉＣを用いた半導体素子は高温でも動作が可能である事から、ＳｉＣを電力用半導体素子の材料として適用する事で、従来のＳｉを適用した電力用半導体装置に比較して小型化、高効率化が実現可能となる。 2. Description of the Related Art A power semiconductor device that constitutes a power converter has a structure including switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and free-wheeling diodes. In general, an IGBT made of silicon (Si) is used as a switching element, and a pin diode is used as a free-wheeling diode. In recent years, power semiconductor devices using silicon carbide (SiC) having a wider band gap than Si have been developed. Since SiC has a dielectric breakdown strength as high as about 10 times that of Si, and the thickness of the drift layer can be reduced to about 1/10 of a semiconductor element made of Si, a low on-voltage is expected. Furthermore, since a semiconductor element using SiC can operate even at high temperatures, application of SiC as a material for a power semiconductor element reduces the size compared to a conventional power semiconductor device using Si. High efficiency can be realized.
　電力用半導体素子の材料としてＳｉＣを適用する場合、スイッチング素子としてＭＯＳＦＥＴを、還流ダイオードとしてＳＢＤ（Ｓｃｈｏｔｔｋｙ　Ｂａｒｒｉｅｒ　Ｄｉｏｄｅ）を適用する事が可能となる。しかしながら、還流ダイオードとしてＳｉＣ－ＳＢＤを用いた電力用半導体装置では、スイッチング動作時においてリンギングが発生する事が知られている。リンギングは、電力変換回路の寄生インダクタンスとＳＢＤの容量による共振に起因するものである。このようなリンギングは、その電圧のピーク値が電力用半導体装置の定格電圧を超えるとモジュールの破損を引き起こす恐れがある。また、リンギングの電圧変動はノイズの原因となりうることから極力抑制する必要がある。ＳｉＣ－ＭＯＳＦＥＴに代表されるワイドバンドギャップ半導体を用いたスイッチング素子では、高速なスイッチング動作が可能であるという特長を最大限に引き出すために、リンギングの抑制が重要な課題となっている。 When SiC is applied as a material for a power semiconductor element, it is possible to apply a MOSFET as a switching element and an SBD (Schottky Barrier Diode) as a free-wheeling diode. However, in a power semiconductor device using SiC-SBD as a freewheeling diode, it is known that ringing occurs during a switching operation. The ringing is caused by resonance due to the parasitic inductance of the power conversion circuit and the capacitance of the SBD. Such ringing may cause damage to the module when the peak value of the voltage exceeds the rated voltage of the power semiconductor device. Further, since the voltage fluctuation of ringing can cause noise, it is necessary to suppress it as much as possible. In a switching element using a wide band gap semiconductor typified by SiC-MOSFET, suppression of ringing is an important issue in order to maximize the feature that high-speed switching operation is possible.
　リンギング抑制する手段の一つとしてスナバ回路の適用がある。たとえば、特開２０１３－２２２９５０号公報（特許文献１）に開示された従来の電力用半導体モジュールは、リンギングを抑制する手段としてスナバコンデンサを内蔵している。また、スナバ回路に用いられるコンデンサに関連して、たとえば特開平１１－２３３３７３号公報（特許文献２）および特開２０１５－８２７０号公報(特許文献３）では、セラミックコンデンサが温度変化により受ける熱衝撃のために破壊される事を防止するため、コンデンサ本体の端子電極に金属板からなる端子部材がはんだ付けされた構造のセラミックコンデンサが開示されている。 Snubber circuit is one of the means to suppress ringing. For example, a conventional power semiconductor module disclosed in Japanese Patent Laid-Open No. 2013-222950 (Patent Document 1) includes a snubber capacitor as a means for suppressing ringing. Further, regarding a capacitor used in a snubber circuit, for example, in Japanese Patent Application Laid-Open No. 11-233373 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2015-8270 (Patent Document 3), a thermal shock that a ceramic capacitor receives due to a temperature change is disclosed. Therefore, a ceramic capacitor having a structure in which a terminal member made of a metal plate is soldered to a terminal electrode of a capacitor body is disclosed.
特開２０１３－２２２９５０号公報JP 2013-222950 A 特開平１１－２３３３７３号公報JP-A-11-233373 特開２０１５－８２７０号公報Japanese Patent Laid-Open No. 2015-8270
　特許文献１の電力用半導体モジュールでは、プリント基板（上基板）と半導体素子を載置した絶縁基板（下基板）とをスナバコンデンサを介して回路的に接続している。下基板などとコンデンサとははんだ接合されている。しかし、特許文献１に開示された上記構造は２つの基板を用いたものであって非常に複雑で、また、その製造方法は煩雑なものである。そのため、当該電力用半導体モジュールの実装時および実装後の使用中におけるスナバコンデンサと基板とのはんだ接合部の信頼性が確保出来ないと言う課題があった。 In the power semiconductor module disclosed in Patent Document 1, a printed board (upper board) and an insulating board (lower board) on which a semiconductor element is placed are connected in a circuit via a snubber capacitor. The lower substrate and the capacitor are soldered together. However, the structure disclosed in Patent Document 1 uses two substrates and is very complicated, and the manufacturing method is complicated. For this reason, there is a problem that the reliability of the solder joint between the snubber capacitor and the substrate cannot be ensured during mounting of the power semiconductor module and during use after mounting.
　また、特許文献２および特許文献３に開示されたコンデンサでは、当該コンデンサの端子部材と基板との接合部について、その信頼性を向上させる手段について言及されていない。当該接合部の信頼性は、電力用半導体モジュールの信頼性を左右する要因の１つである。 Further, in the capacitors disclosed in Patent Document 2 and Patent Document 3, there is no mention of means for improving the reliability of the joint portion between the terminal member of the capacitor and the substrate. The reliability of the junction is one of the factors that influence the reliability of the power semiconductor module.
　本発明は、上記のような課題を開発するためになされたものであり、スイッチング素子のスイッチング動作時に発生するリンギングを抑制する事ができ、高い信頼性を有する電力用半導体モジュールを提供する事を目的とする。 The present invention has been made in order to develop the above-described problems, and provides a power semiconductor module that can suppress ringing that occurs during switching operation of a switching element and has high reliability. Objective.
　本開示に従った電力用半導体モジュールは、少なくとも１つの半導体素子と、導体パターンと、少なくとも１つのスナバ回路と、封止体と、中間部材と、接合材とを備える。導体パターンには、少なくとも１つの半導体素子が接続される。少なくとも１つのスナバ回路は、導体パターンと電気的に接続される。少なくとも１つのスナバ回路は、コンデンサと抵抗体とが直列に接続された回路である。封止体は、少なくとも１つの半導体素子、導体パターン、コンデンサおよび抵抗体を封止する。中間部材はコンデンサと接続される。接合材は、当該中間部材を導体パターンに接続する。 The power semiconductor module according to the present disclosure includes at least one semiconductor element, a conductor pattern, at least one snubber circuit, a sealing body, an intermediate member, and a bonding material. At least one semiconductor element is connected to the conductor pattern. At least one snubber circuit is electrically connected to the conductor pattern. At least one snubber circuit is a circuit in which a capacitor and a resistor are connected in series. The sealing body seals at least one semiconductor element, conductor pattern, capacitor, and resistor. The intermediate member is connected to the capacitor. The bonding material connects the intermediate member to the conductor pattern.
　本開示によれば、コンデンサと導体パターンとの接合部にコンデンサに接続された中間部材を利用するため、導体パターンとコンデンサとの接合部の実装が容易になり当該接合部を信頼性高く形成することができる。このため、スナバ回路によりリンギングを抑制できるとともに、コンデンサと導体パターンとの接合部の不良などに起因する問題の発生を抑制できる。この結果、信頼性の高い電力用半導体モジュールを得ることができる。 According to the present disclosure, since the intermediate member connected to the capacitor is used at the junction between the capacitor and the conductor pattern, the junction between the conductor pattern and the capacitor can be easily mounted, and the junction is formed with high reliability. be able to. For this reason, ringing can be suppressed by the snubber circuit, and the occurrence of problems caused by defects in the junction between the capacitor and the conductor pattern can be suppressed. As a result, a highly reliable power semiconductor module can be obtained.
本発明の実施の形態１に係る電力変換装置における電力変換回路を示す模式図である。It is a schematic diagram which shows the power converter circuit in the power converter device which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る電力用半導体モジュールの断面および上面の一部を示す模式図である。It is a schematic diagram which shows a part of the cross section and upper surface of the power semiconductor module which concerns on Embodiment 1 of this invention. 図２に示した電力用半導体モジュールのコンデンサ実装部の変形例の上面模式図である。FIG. 5 is a schematic top view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG. 2. 図３に示したコンデンサ実装部の変形例の等価回路図である。FIG. 4 is an equivalent circuit diagram of a modification of the capacitor mounting portion shown in FIG. 3. 図２に示した電力用半導体モジュールのコンデンサ実装部の構成例の上面および断面を示す模式図である。FIG. 3 is a schematic diagram illustrating a top surface and a cross section of a configuration example of a capacitor mounting portion of the power semiconductor module illustrated in FIG. 2. 図２に示した電力用半導体モジュールの抵抗体実装部の構成例の断面を示す模式図である。It is a schematic diagram which shows the cross section of the structural example of the resistor mounting part of the power semiconductor module shown in FIG. 図２に示した電力用半導体モジュールの抵抗体実装部の変形例の断面を示す模式図である。It is a schematic diagram which shows the cross section of the modification of the resistor mounting part of the power semiconductor module shown in FIG. 本発明の実施の形態１に係る電力用半導体モジュールの変形例の断面を示す模式図である。It is a schematic diagram which shows the cross section of the modification of the semiconductor module for electric power which concerns on Embodiment 1 of this invention. 本発明の実施の形態１の変形例に係る電力用半導体モジュールの断面を示す模式図である。It is a schematic diagram which shows the cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 1 of this invention. 本発明の実施の形態２に係る電力用半導体モジュールの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on Embodiment 2 of this invention. 本発明の実施の形態２の変形例に係る電力用半導体モジュールのコンデンサの断面を示す模式図である。It is a schematic diagram which shows the cross section of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 2 of this invention. 本発明の実施の形態３に係る電力用半導体モジュールの断面を示す模式図である。It is a schematic diagram which shows the cross section of the semiconductor module for electric power which concerns on Embodiment 3 of this invention. 本発明の実施の形態３のに係る電力用半導体モジュールの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on Embodiment 3 of this invention. 本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 3 of this invention. 本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 3 of this invention. 本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 3 of this invention. 本発明の実施の形態４に係る電力用半導体モジュールのコンデンサの部分断面および接続部の上面を示す模式図である。It is a schematic diagram which shows the partial cross section of the capacitor | condenser of the power semiconductor module which concerns on Embodiment 4 of this invention, and the upper surface of a connection part. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの接続部の上面を示す模式図である。It is a schematic diagram which shows the upper surface of the connection part of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 4 of this invention. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの接続部の上面を示す模式図である。It is a schematic diagram which shows the upper surface of the connection part of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 4 of this invention. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの接続部の上面を示す模式図である。It is a schematic diagram which shows the upper surface of the connection part of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 4 of this invention. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの部分断面および接続部の上面を示す模式図である。It is a schematic diagram which shows the partial cross section of the capacitor | condenser of the power semiconductor module which concerns on the modification of Embodiment 4 of this invention, and the upper surface of a connection part. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 4 of this invention. 本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの部分断面を示す模式図である。It is a schematic diagram which shows the partial cross section of the capacitor | condenser of the semiconductor module for electric power which concerns on the modification of Embodiment 4 of this invention.
　以下、図面を参照しながら本発明の実施の形態について説明する。以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、図１を含め、以下の図面では各構成部材の大きさの関係が実際のものとは異なる場合がある。さらに、明細書全文に表わされている構成要素の形態は、あくまでも例示であって、これらの記載に限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated. Moreover, in the following drawings including FIG. 1, the relationship of the size of each component may be different from the actual one. Furthermore, the forms of the constituent elements shown in the entire specification are merely examples, and are not limited to these descriptions.
　実施の形態１．
　＜電力用半導体モジュールの構成＞
　図１は、本発明の実施の形態１に係る電力変換装置における電力変換回路を示す模式図である。図２は、本発明の実施の形態１に係る電力用半導体モジュールの断面および上面の一部を示す模式図である。図５は、図２に示した電力用半導体モジュールのコンデンサ実装部の上面および断面を示す模式図である。図６は、図２に示した電力用半導体モジュールの抵抗体実装部の断面を示す模式図である。図１～図６を用いて、本実施形態に係る電力用半導体モジュールを説明する。 Embodiment 1 FIG.
<Configuration of power semiconductor module>
FIG. 1 is a schematic diagram showing a power conversion circuit in the power conversion device according to Embodiment 1 of the present invention. FIG. 2 is a schematic diagram showing a cross section and a part of the upper surface of the power semiconductor module according to the first embodiment of the present invention. FIG. 5 is a schematic diagram illustrating a top surface and a cross section of the capacitor mounting portion of the power semiconductor module illustrated in FIG. 2. 6 is a schematic diagram showing a cross section of the resistor mounting portion of the power semiconductor module shown in FIG. The power semiconductor module according to this embodiment will be described with reference to FIGS.
　図１では、電力変換装置は一つの電力用半導体モジュール１０１で構成され、モーター１０２を駆動する。電力用半導体モジュール１０１は、３つのレグ１０５ａ、１０５ｂ、１０５ｃが電源３０に対して並列に接続されている。各レグ１０５ａ、１０５ｂ、１０５ｃは、それぞれ正極側スイッチング素子１０３Ｐと正極側還流ダイオード１０４Ｐと負極側スイッチング素子１０３Ｎと負極側還流ダイオード１０４Ｎとを含む。 In FIG. 1, the power conversion device is composed of one power semiconductor module 101 and drives the motor 102. In the power semiconductor module 101, three legs 105 a, 105 b, and 105 c are connected in parallel to the power supply 30. Each leg 105a, 105b, 105c includes a positive-side switching element 103P, a positive-side reflux diode 104P, a negative-side switching element 103N, and a negative-side reflux diode 104N, respectively.
　レグ１０５ａ、１０５ｂ、１０５ｃでは、互いに逆並列接続された正極側スイッチング素子１０３Ｐと正極側還流ダイオード１０４Ｐとが正極側電力用半導体素子を構成している。また、互いに逆並列接続された負極側スイッチング素子１０３Ｎと負極側還流ダイオード１０４Ｎとが負極側電力用半導体素子を構成している。各レグ１０５ａ、１０５ｂ、１０５ｃの正極側電力用半導体素子と負極側電力用半導体素子との接続点である中点がそれぞれモーター１０２と接続される。上記正極側電力用半導体素子および上記負極側電力用半導体素子が、本実施の形態に係る少なくとも１つの半導体素子の一例に相当する。 In the legs 105a, 105b, and 105c, the positive-side switching element 103P and the positive-side reflux diode 104P that are connected in reverse parallel to each other constitute a positive-side power semiconductor element. The negative-side switching element 103N and the negative-side return diode 104N connected in reverse parallel to each other constitute a negative-side power semiconductor element. The midpoint, which is the connection point between the positive power semiconductor element and the negative power semiconductor element of each leg 105a, 105b, 105c, is connected to the motor 102, respectively. The positive power semiconductor element and the negative power semiconductor element correspond to an example of at least one semiconductor element according to the present embodiment.
　レグ１０５ｃでは、正極側電力用半導体素子と負極側電力用半導体素子との直列回路に対して、スナバ回路１０６が並列に接続されている。スナバ回路１０６は、コンデンサ２０９と抵抗体２１０とが直列に接続された回路である。なお、図１に示した回路では、スナバ回路１０６はレグ１０５ｃのみに配置されているが、スナバ回路１０６を他のレグ１０５ａ、１０５ｂに配置してもよいし、レグ１０５ａ～１０５ｃのいずれか二つにスナバ回路１０６を配置してもよいし、すべてのレグ１０５ａ～１０５ｃのそれぞれにスナバ回路１０６を配置してもよい。 In the leg 105c, the snubber circuit 106 is connected in parallel to the series circuit of the positive power semiconductor element and the negative power semiconductor element. The snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series. In the circuit shown in FIG. 1, the snubber circuit 106 is arranged only in the leg 105c. However, the snubber circuit 106 may be arranged in another leg 105a, 105b, or any one of the legs 105a to 105c. The snubber circuit 106 may be arranged in one, or the snubber circuit 106 may be arranged in each of all the legs 105a to 105c.
　以下では、正極側スイッチング素子１０３Ｐおよび負極側スイッチング素子１０３Ｎ（以下、単にスイッチング素子とも呼ぶ）としてＳｉＣ－ＭＯＳＦＥＴ、正極側還流ダイオード１０４Ｐおよび負極側還流ダイオード１０４Ｎ（以下、単に還流ダイオードとも呼ぶ）としてＳｉＣ－ＳＢＤを適用した例について説明する。 Hereinafter, SiC-MOSFET as the positive electrode side switching element 103P and the negative electrode side switching element 103N (hereinafter also simply referred to as switching element), and SiC as the positive electrode side freewheeling diode 104P and negative electrode side freewheeling diode 104N (hereinafter also simply referred to as the freewheeling diode). -An example in which SBD is applied will be described.
　図１に示したように、電力変換回路における還流ダイオードとしてＳｉＣ－ＳＢＤを搭載した電力用半導体モジュールを用いた場合、スイッチング動作時にリンギングが発生する場合がある。リンギングは、上述のように電力変換回路の寄生インダクタンスとＳＢＤの容量とによる共振に起因するものである。このようなリンギングは、その電圧のピーク値が電力用半導体モジュールの定格電圧を超えると、当該モジュールの破損を引き起こしかねない。また、リンギングにおける電圧はノイズの原因となりうることから、リンギングを極力抑制する必要がある。 As shown in FIG. 1, when a power semiconductor module equipped with SiC-SBD is used as a freewheeling diode in a power conversion circuit, ringing may occur during a switching operation. As described above, the ringing is caused by resonance due to the parasitic inductance of the power conversion circuit and the capacitance of the SBD. Such ringing may cause damage to the module when the peak value of the voltage exceeds the rated voltage of the power semiconductor module. Moreover, since the voltage in ringing can cause noise, it is necessary to suppress ringing as much as possible.
　このようなリンギングの抑制に有効な手段として、図１に示す電力変換装置ではスナバ回路１０６を設置している。スナバ回路１０６は正極側電力用半導体素子の正電極と負極側電力用半導体素子の負電極の間に実装される。 As an effective means for suppressing such ringing, a snubber circuit 106 is installed in the power converter shown in FIG. The snubber circuit 106 is mounted between the positive electrode of the positive power semiconductor element and the negative electrode of the negative power semiconductor element.
　図２は、図１に示した電力変換回路を実装した電力変換装置の一例の断面および上面の一部を示している。図２の上側は電力変換装置の断面を示し、図２の下側は電力変換装置の上面の一部を示している。図２に示すように、本実施の形態に係る電力変換装置は、ベース板２０１と、ベース絶縁基板２０３と、半導体素子２０４と、スナバ回路と、ケース２０２とを主に備える。スナバ回路は、セラミックコンデンサであるコンデンサ２０９と抵抗体２１０とにより構成される。ベース絶縁基板２０３は、板状の絶縁材２０３ｂと、絶縁材２０３ｂの上面に形成された導体パターン２０３ａ、２０３ｄ～２０３ｈと、絶縁材２０３ｂの裏面に形成された導体パターン２０３ｃとを主に含む。半導体素子２０４はスイッチング素子２０４ａとしてのＳｉＣ－ＭＯＳＦＥＴ、および還流ダイオード２０４ｂとしてのＳｉＣ－ＳＢＤを含む。たとえば、スイッチング素子２０４ａは図１における正極側スイッチング素子１０３Ｐまたは負極側スイッチング素子１０３Ｎであってもよい。また、還流ダイオード２０４ｂは、図１における正極側還流ダイオード１０４Ｐまたは負極側還流ダイオード１０４Ｎであってもよい。 FIG. 2 shows a cross-section and a part of the upper surface of an example of the power conversion device in which the power conversion circuit shown in FIG. 1 is mounted. The upper side of FIG. 2 shows a cross section of the power converter, and the lower side of FIG. 2 shows a part of the upper surface of the power converter. As shown in FIG. 2, the power conversion device according to the present embodiment mainly includes a base plate 201, a base insulating substrate 203, a semiconductor element 204, a snubber circuit, and a case 202. The snubber circuit includes a capacitor 209 that is a ceramic capacitor and a resistor 210. The base insulating substrate 203 mainly includes a plate-shaped insulating material 203b, conductor patterns 203a and 203d to 203h formed on the top surface of the insulating material 203b, and a conductor pattern 203c formed on the back surface of the insulating material 203b. The semiconductor element 204 includes a SiC-MOSFET as the switching element 204a and a SiC-SBD as the freewheeling diode 204b. For example, the switching element 204a may be the positive electrode side switching element 103P or the negative electrode side switching element 103N in FIG. Further, the freewheeling diode 204b may be the positive electrode side freewheeling diode 104P or the negative electrode side freewheeling diode 104N in FIG.
　図２に示す電力変換装置では、ベース板２０１の上面にベース絶縁基板２０３がはんだ２０７ｂ（基板下はんだ）により接合されている。具体的には、はんだ２０７ｂはベース絶縁基板２０３の裏面側の導体パターン２０３ｃとベース板２０１の上面とに接触している。ベース絶縁基板２０３の上面には半導体素子２０４がはんだ２０７ａ（チップ下はんだ）により接合されている。半導体素子２０４とケース２０２に設置された端子２０８とは、配線部材２０６により結線されている。具体的には、図２に示された端子２０８に接続された配線部材２０６は、導体パターン２０３ｈおよびスイッチング素子２０４ａと接続されている。また、スイッチング素子２０４ａのたとえばソース電極と接続された他の配線部材２０６は、還流ダイオード２０４ｂおよび導体パターン２０３ｄと接続されている。別の配線部材２０６は、導体パターン２０３ｇと端子２０８とを接続する。 2, the base insulating substrate 203 is joined to the upper surface of the base plate 201 with solder 207b (under-substrate solder). Specifically, the solder 207 b is in contact with the conductor pattern 203 c on the back surface side of the base insulating substrate 203 and the upper surface of the base plate 201. A semiconductor element 204 is joined to the upper surface of the base insulating substrate 203 by solder 207a (under-chip solder). The semiconductor element 204 and the terminal 208 installed in the case 202 are connected by a wiring member 206. Specifically, the wiring member 206 connected to the terminal 208 shown in FIG. 2 is connected to the conductor pattern 203h and the switching element 204a. Further, another wiring member 206 connected to, for example, the source electrode of the switching element 204a is connected to the reflux diode 204b and the conductor pattern 203d. Another wiring member 206 connects the conductor pattern 203 g and the terminal 208.
　コンデンサ２０９と抵抗体２１０とはベース絶縁基板２０３の上面に載置され、直列に接続されている。具体的には、抵抗体２１０は導体パターン２０３ｄと導体パターン２０３ｅとの間を繋ぐように配置されている。導体パターン２０３ｅはコンデンサ２０９の一方の形の電極と接続されている。導体パターン２０３ｅとは異なる導体パターン２０３ｆとコンデンサ２０９のもう一方の側の電極とは接続されている。つまり、コンデンサ２０９は、導体パターン２０３ｅと導体パターン２０３ｆとを繋ぐように配置されている。コンデンサ２０９と抵抗体２１０とは導体パターン２０３ｅを介して直列に接続されている。 The capacitor 209 and the resistor 210 are placed on the upper surface of the base insulating substrate 203 and connected in series. Specifically, the resistor 210 is disposed so as to connect the conductor pattern 203d and the conductor pattern 203e. The conductor pattern 203e is connected to one electrode of the capacitor 209. A conductor pattern 203f different from the conductor pattern 203e and the electrode on the other side of the capacitor 209 are connected. That is, the capacitor 209 is disposed so as to connect the conductor pattern 203e and the conductor pattern 203f. The capacitor 209 and the resistor 210 are connected in series via the conductor pattern 203e.
　導体パターン２０３ａは半導体素子２０４を載置した正極側ドレイン電極である。スナバ回路を形成するコンデンサ２０９において、コンデンサ２０９の耐圧は電力用半導体装置の定格電圧により選択されるべきものである。しかし、コンデンサ２０９は、電力用半導体装置の定格電圧以上の耐圧を有している事が望ましい。一つのコンデンサ２０９で耐圧を満たさない場合は、セラミックコンデンサを直列に接続して複数のセラミックコンデンサで耐圧を確保しても良い。この際に、複数のコンデンサ２０９の電気的特性は実質的に同じである事が好ましい。すなわち、図２の下側の平面図に示すように、それぞれ独立した導体パターン２０３ｅと導体パターン２０３ｆと導体パターン２０３ｇをコンデンサ２０９により直列に接続してもよい。なお、図示しないが導体パターン２０３ｇは負極側のドレイン電極と接続されている。 The conductor pattern 203a is a positive electrode side drain electrode on which the semiconductor element 204 is mounted. In the capacitor 209 forming the snubber circuit, the withstand voltage of the capacitor 209 should be selected according to the rated voltage of the power semiconductor device. However, it is desirable that the capacitor 209 has a breakdown voltage equal to or higher than the rated voltage of the power semiconductor device. When one capacitor 209 does not satisfy the withstand voltage, ceramic capacitors may be connected in series to ensure the withstand voltage with a plurality of ceramic capacitors. At this time, the electrical characteristics of the plurality of capacitors 209 are preferably substantially the same. That is, as shown in the lower plan view of FIG. 2, the independent conductor pattern 203e, conductor pattern 203f, and conductor pattern 203g may be connected in series by the capacitor 209. Although not shown, the conductor pattern 203g is connected to the drain electrode on the negative electrode side.
　なお、本発明の実施の形態では、コンデンサ２０９の一例として積層セラミックコンデンサを想定して説明する。しかし、コンデンサの本来の機能である、静電荷を蓄えたり放出したりする機能を有しており、使用にあたり十分な静電容量と耐圧を有していれば他の任意の構成のコンデンサを用いることができる。たとえば、コンデンサ２０９として、高誘電率材料を積層化した薄膜コンデンサを用いてもよい。このような薄膜コンデンサは、例えば、半導体製造技術を活用して形成できる。 In the embodiment of the present invention, a multilayer ceramic capacitor is assumed as an example of the capacitor 209. However, it has the function of accumulating and discharging electrostatic charges, which is the original function of a capacitor, and if it has sufficient capacitance and withstand voltage for use, a capacitor of any other configuration is used. be able to. For example, as the capacitor 209, a thin film capacitor in which high dielectric constant materials are stacked may be used. Such a thin film capacitor can be formed by utilizing, for example, semiconductor manufacturing technology.
　また、図３に示すように、複数のコンデンサ２０９ａ、２０９ｂを直列に接続する構成としてもよい。図３は、図２に示した電力用半導体モジュールのコンデンサ実装部の変形例の上面模式図である。図４は、図３に示したコンデンサ実装部の等価回路図である。図３に示すように、２つのコンデンサ２０９ａ、２０９ｂがスナバ回路用基板２３０に搭載されている。さらに、３つの抵抗体２３３ａ、２３３ｂ、２１０がスナバ回路用基板２３０に搭載されている。 Further, as shown in FIG. 3, a plurality of capacitors 209a and 209b may be connected in series. FIG. 3 is a top schematic view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG. FIG. 4 is an equivalent circuit diagram of the capacitor mounting portion shown in FIG. As shown in FIG. 3, two capacitors 209 a and 209 b are mounted on the snubber circuit board 230. Further, three resistors 233a, 233b, and 210 are mounted on the snubber circuit board 230.
　スナバ回路用基板２３０は、セラミック基板２３０ａと、当該セラミック基板２３０ａの表面上に配置された導体パターン２３０ｃ、２３０ｄ、２３０ｅ、２３０ｆと、セラミック基板２３０ａの裏面側に配置された導体パターン（図示せず）とを含む。導体パターン２３０ｃ、２３０ｄ、２３０ｅ、２３０ｆは、互いに間隔を隔ててセラミック基板２３０ａの表面上に配置されている。導体パターン２３０ｃ、２３０ｄ、２３０ｅ、２３０ｆは互いにほぼ平行に延びるように配置されている。導体パターン２３０ｆはスルーホール２３２によりセラミック基板２３０ａの裏面側に配置された導体パターンと電気的に接続されている。スルーホール２３２は複数形成されている。 The snubber circuit substrate 230 includes a ceramic substrate 230a, conductor patterns 230c, 230d, 230e, and 230f disposed on the surface of the ceramic substrate 230a, and a conductor pattern (not shown) disposed on the back side of the ceramic substrate 230a. ). The conductor patterns 230c, 230d, 230e, and 230f are disposed on the surface of the ceramic substrate 230a at a distance from each other. The conductor patterns 230c, 230d, 230e, and 230f are arranged so as to extend substantially parallel to each other. The conductor pattern 230f is electrically connected to the conductor pattern disposed on the back side of the ceramic substrate 230a through the through hole 232. A plurality of through holes 232 are formed.
　コンデンサ２０９ａは導体パターン２３０ｃと導体パターン２３０ｄとを接続する。コンデンサ２０９ｂは導体パターン２３０ｄと導体パターン２３０ｅとを接続する。抵抗体２３３ａは導体パターン２３０ｃと導体パターン２３０ｄとを接続する。抵抗体２３３ｂは導体パターン２３０ｄと導体パターン２３０ｅとを接続する。抵抗体２１０は導体パターン２３０ｅと導体パターン２３０ｆとを接続する。図４からもわかるように、２つのコンデンサ２０９ａ、２０９ｂおよび抵抗体２１０は直列に接続されている。抵抗体２３３ａはコンデンサ２０９ａと並列に接続されている。抵抗体２３３ｂはコンデンサ２０９ｂと並列に接続されている。すなわち、各コンデンサ２０９ａ、２０９ｂに均等に電圧を分圧するために、各コンデンサ２０９ａ、２０９ｂに並列に分圧抵抗としての抵抗体２３３ａ、２３３ｂが接続されている。ここで、分圧抵抗としての抵抗体２３３ａ、２３３ｂは、コンデンサ２０９ａ、２０９ｂに直列接続された抵抗体２１０に比較して、１０００倍以上の抵抗値を有する抵抗体であることが好ましい。また、複数のコンデンサ２０９ａ、２０９ｂに並列接続される各分圧抵抗である抵抗体２３３ａ、２３３ｂの電気的特性は実質的に同じである事が好ましい。 The capacitor 209a connects the conductor pattern 230c and the conductor pattern 230d. The capacitor 209b connects the conductor pattern 230d and the conductor pattern 230e. The resistor 233a connects the conductor pattern 230c and the conductor pattern 230d. The resistor 233b connects the conductor pattern 230d and the conductor pattern 230e. The resistor 210 connects the conductor pattern 230e and the conductor pattern 230f. As can be seen from FIG. 4, the two capacitors 209a and 209b and the resistor 210 are connected in series. The resistor 233a is connected in parallel with the capacitor 209a. The resistor 233b is connected in parallel with the capacitor 209b. That is, resistors 233a and 233b serving as voltage dividing resistors are connected in parallel to the capacitors 209a and 209b in order to evenly divide the voltages to the capacitors 209a and 209b. Here, it is preferable that the resistors 233a and 233b serving as voltage dividing resistors are resistors having a resistance value 1000 times or more that of the resistor 210 connected in series to the capacitors 209a and 209b. Moreover, it is preferable that the electrical characteristics of the resistors 233a and 233b, which are voltage-dividing resistors connected in parallel to the plurality of capacitors 209a and 209b, are substantially the same.
　ベース板２０１の外周に沿って、ケース２０２が取り付けられている。ベース板２０１、ベース絶縁基板２０３、半導体素子２０４、コンデンサ２０９、抵抗体２１０、配線部材２０６、端子２０８の一部を覆うように、ケース２０２内部は封止体２０５により満たされている。 A case 202 is attached along the outer periphery of the base plate 201. The inside of the case 202 is filled with a sealing body 205 so as to cover a part of the base plate 201, the base insulating substrate 203, the semiconductor element 204, the capacitor 209, the resistor 210, the wiring member 206, and the terminal 208.
　ケース２０２は任意の樹脂により構成してもよいが、たとえばポリフェニルサルファイド樹脂（ＰＰＳ）またはポリブチレンテレフタレート樹脂（ＰＢＴ）またはポリエチレンテレフタレート樹脂（ＰＥＴ）からなる。ベース絶縁基板２０３の絶縁材２０３ｂはアルミナ（Ａｌ２Ｏ３）、窒化アルミニウム（ＡｌＮ）、および窒化珪素（Ｓｉ３Ｎ４）などのセラミックス材だけでなく、エポキシ材や液晶ポリマーなどのバインダー材にシリカ、アルミナ、および窒化ホウ素（ＢＮ）などのフィラーが混練されたような有機絶縁層であってもよい。また、導体パターン２０３ａおよび導体パターン２０３ｃはたとえば銅（Cu）膜であるが、銅膜の表面にニッケル（Ｎｉ）めっきまたは銀（Ａｇ）めっきが施されていてもよい。導体パターン２０３ａおよび導体パターン２０３ｃは、アルミニウム（Ａｌ）膜の表面にＮｉめっきまたはＡｇめっきが施されたものでもよい。 The case 202 may be made of any resin, and is made of, for example, polyphenyl sulfide resin (PPS), polybutylene terephthalate resin (PBT), or polyethylene terephthalate resin (PET). The insulating material 203b of the base insulating substrate 203 is not only a ceramic material such as alumina (Al 2 O 3 ), aluminum nitride (AlN), and silicon nitride (Si 3 N 4 ), but also a binder material such as an epoxy material or a liquid crystal polymer. An organic insulating layer in which fillers such as silica, alumina, and boron nitride (BN) are kneaded may be used. The conductor pattern 203a and the conductor pattern 203c are, for example, copper (Cu) films, but the surface of the copper film may be subjected to nickel (Ni) plating or silver (Ag) plating. The conductor pattern 203a and the conductor pattern 203c may be those in which the surface of an aluminum (Al) film is subjected to Ni plating or Ag plating.
　半導体素子２０４はスイッチング素子２０４ａとしてＳｉＣ―ＭＯＳＦＥＴ、還流ダイオード２０４ｂとしてＳｉＣ―ＳＢＤを用いている、珪素（Ｓｉ）を基材とするＳｉ―ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ　Ｇａｔｅ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）およびＳｉ―ＦＷＤ（Ｆｒｅｅ　Ｗｈｅｅｌｉｎｇ　Ｄｉｏｄｅ）をそれぞれスイッチング素子２０４ａおよび還流ダイオード２０４ｂとして用いてもよい。半導体素子２０４上に配置される配線部材２０６はたとえばＡｌワイヤであり、ウェッジボンディングにより半導体素子２０４表面と接合されている。ただし、配線部材２０６としては導電性があればよく、例えばＣｕワイヤを用いてもよい。また、配線部材２０６はワイヤ形状ではなく板材であってもよい。配線部材２０６と半導体素子２０４との接合は、ウェッジボンディングとは異なる接合方法を用いてもよい。たとえば、半導体素子２０４上面に例えばＮｉ／Ａｕめっき、Ｃｕめっき、またはＡｇめっきを施してある場合、はんだ、Ａｇを含有した接着剤、またはＡｇ焼結材により配線部材２０６と半導体素子２０４とを接合していてもよい。チップ下はんだ２０７ａはたとえばＳｎを基材としたはんだ材であるが、Ａｇ焼結材によりベース絶縁基板２０３表面側の導体パターン２０３ａと半導体素子２０４とを接合していてもよい。封止体２０５はたとえばシリコンゲルであるが、電力用半導体モジュールの使用に当たり十分な絶縁性を有していればよく、封止体２０５としてフィラーが混練されたエポキシ材を用いてもよい。 The semiconductor element 204 uses an SiC-MOSFET as the switching element 204a and an SiC-SBD as the freewheeling diode 204b. The silicon (Si) -based Si-IGBT (Insulated Gate Bipolar Transistor) and Si-FWD (Free Wheeling Diode). ) May be used as the switching element 204a and the return diode 204b, respectively. The wiring member 206 disposed on the semiconductor element 204 is, for example, an Al wire, and is joined to the surface of the semiconductor element 204 by wedge bonding. However, the wiring member 206 may be conductive, and for example, a Cu wire may be used. The wiring member 206 may be a plate material instead of a wire shape. For joining the wiring member 206 and the semiconductor element 204, a joining method different from wedge bonding may be used. For example, when the upper surface of the semiconductor element 204 is subjected to, for example, Ni / Au plating, Cu plating, or Ag plating, the wiring member 206 and the semiconductor element 204 are joined by solder, an adhesive containing Ag, or an Ag sintered material. You may do it. The under-chip solder 207a is, for example, a solder material based on Sn, but the conductor pattern 203a on the surface side of the base insulating substrate 203 and the semiconductor element 204 may be joined by an Ag sintered material. The sealing body 205 is, for example, silicon gel, but may have an insulating property sufficient for use of the power semiconductor module, and an epoxy material in which a filler is kneaded may be used as the sealing body 205.
　ここで、コンデンサ２０９と導体パターン２０３ｅ、２０３ｆとははんだ接合部２１１により接続されている。当該はんだ接合部２１１は、半導体素子２０４が導体パターン２０３ａにはんだ付けされる工程、もしくは、ベース絶縁基板２０３がベース板２０１とはんだ付けされる工程において同時に形成される事が効率的で好ましい。はんだ付け工法については、以下詳細を説明する。 Here, the capacitor 209 and the conductor patterns 203e and 203f are connected by a solder joint portion 211. It is efficient and preferable that the solder joint portion 211 is formed at the same time in a process in which the semiconductor element 204 is soldered to the conductor pattern 203a or a process in which the base insulating substrate 203 is soldered to the base plate 201. Details of the soldering method will be described below.
　パワーモジュールのはんだ付けでは、はんだペースト材に含有されるフラックスに起因するボイド発生やはんだの飛散（はんだボール）が懸念されることから、フラックスを含有したはんだペースト材を適用する事は一般的に少ない。そこで、半導体素子のはんだ付けでは、還元雰囲気下ではんだ材を還元しながらはんだを溶融させるはんだ付け工法を適用する場合がある。この還元雰囲気下でのはんだ付け工法を採用する場合、板状のはんだ材を導体パターン上に載置して、更に当該はんだ材の上に半導体素子を載置してはんだ付けを実施する。コンデンサ２０９をベース絶縁基板２０３上の半導体素子２０４と同一面にはんだ付けする際に、半導体素子２０４と同時にはんだ付けする事は、コンデンサ２０９を実装する事による工数増加を招かない事から非常に効率的である。 When soldering power modules, there are concerns about voids and solder scattering (solder balls) due to the flux contained in the solder paste material, so it is common to apply a solder paste material containing flux. Few. Therefore, in soldering a semiconductor element, a soldering method in which solder is melted while reducing a solder material in a reducing atmosphere may be applied. When the soldering method under the reducing atmosphere is employed, a plate-like solder material is placed on the conductor pattern, and a semiconductor element is placed on the solder material to perform soldering. When the capacitor 209 is soldered to the same surface as the semiconductor element 204 on the base insulating substrate 203, soldering at the same time as the semiconductor element 204 does not increase the number of steps by mounting the capacitor 209, which is very efficient. Is.
　具体的には、板状のはんだ材を導体パターンの上に載置して、更にそのはんだ材上にコンデンサ２０９のはんだ付け部を載置する。もしくは、導体パターン２０３ｅ、２０３ｆの上にコンデンサ２０９を載置して、その近傍に矩形状もしくは球状のはんだ材を載置する。この状態ではんだ材を溶融して濡れ広げる事でコンデンサ２０９をはんだ付けする。この際、はんだの濡れ広がる領域を限定するためにソルダーレジストなどからなる部材を導体パターン２０３ｅ、２０３ｆ上に予め印刷しておいてもよい。ここでは、半導体素子２０４と同時にコンデンサ２０９を実装する工法について記載したが、ベース絶縁基板２０３をベース板２０１にはんだ付けする際に、同種の方法でコンデンサ２０９を導体パターン２０３ｅ、２０３ｆに接続してもよい。 Specifically, a plate-like solder material is placed on the conductor pattern, and a soldered portion of the capacitor 209 is placed on the solder material. Alternatively, the capacitor 209 is placed on the conductor patterns 203e and 203f, and a rectangular or spherical solder material is placed in the vicinity thereof. In this state, the capacitor 209 is soldered by melting and spreading the solder material. At this time, a member made of a solder resist or the like may be printed on the conductor patterns 203e and 203f in advance in order to limit the area where the solder spreads. Here, the method of mounting the capacitor 209 at the same time as the semiconductor element 204 has been described. However, when the base insulating substrate 203 is soldered to the base plate 201, the capacitor 209 is connected to the conductor patterns 203e and 203f by the same type of method. Also good.
　コンデンサ２０９はサイズや内蔵される電極枚数に依存するが、およそ２ｇ／ｃｍ３以上６ｇ／ｃｍ３以下の密度を有する。はんだ付け時には、コンデンサ２０９の自重により、溶融したはんだがコンデンサ２０９の直下の領域から押し出され、はんだ接合部２１１の厚みは薄くなる。なお、コンデンサ２０９の静電容量は、たとえば１ｎＦ以上３０ｎＦ以下といった数値範囲であればリンギング抑制効果が大きい。 The capacitor 209 has a density of about 2 g / cm 3 or more and 6 g / cm 3 or less, depending on the size and the number of built-in electrodes. At the time of soldering, the melted solder is pushed out from the region immediately below the capacitor 209 due to its own weight, and the thickness of the solder joint portion 211 is reduced. In addition, if the electrostatic capacitance of the capacitor 209 is in a numerical value range of, for example, 1 nF to 30 nF, the ringing suppression effect is large.
　図５はコンデンサ２０９のはんだ接合部の構成例の詳細を図示した上面図と断面図とを示している。図５において上側の図が上面図であり、下側の図が断面図である。コンデンサ２０９はコンデンサ本体５０１ａと外部電極５０１ｂとを含む。図５に示した構成では、コンデンサ本体５０１ａが本実施の形態に係るコンデンサの一例に相当する。また、外部電極５０１ｂが本実施の形態に係る中間部材の一例に相当する。ベース絶縁基板２０３は、セラミック基板５０４ｃと、当該セラミック基板５０４ｃの上面上に形成された導体パターン５０４ａ、５０４ｂと、セラミック基板５０４ｃの下面上に形成された導体パターン５０４ｄとを含む。外部電極５０１ｂは、正極側の導体パターン５０４ａおよび負極側の導体パターン５０４ｂと、はんだ接合部２１１により接続されている。はんだ接合部２１１が本実施の形態に係る接合材の一例に相当する。正極側の導体パターン５０４ａおよび負極側の導体パターン５０４ｂの上にははんだが濡れ広がる事を防止するためのソルダーレジスト５０３ａ、５０３ｂが形成されている。ソルダーレジスト５０３ｂの上にコンデンサ２０９が搭載されている。ソルダーレジスト５０３ａ、５０３ｂの厚みはたとえば１０μｍ以上３０μｍ以下である。溶融したはんだがコンデンサ２０９の自重により押し広げられて、セラミックコンデンサ外部電極５０１ｂと接続されたはんだ接合部２１１を形成する。そのため、セラミックコンデンサ外部電極５０１ｂとベース絶縁基板２０３の導体パターン５０４ａとの間に配置されるはんだ厚さはソルダーレジスト５０３ｂの厚みとほぼ同等しか確保が出来ない。このため、ソルダーレジスト５０３ｂの厚みが十分ではない場合、パワーモジュールの接合信頼性として要求される接合寿命を得るには不十分なはんだ接合部２１１の厚さしか確保出来ないと言う課題があった。 FIG. 5 shows a top view and a cross-sectional view illustrating details of a configuration example of a solder joint portion of the capacitor 209. In FIG. 5, the upper view is a top view and the lower view is a cross-sectional view. Capacitor 209 includes a capacitor body 501a and an external electrode 501b. In the configuration shown in FIG. 5, the capacitor body 501a corresponds to an example of the capacitor according to the present embodiment. The external electrode 501b corresponds to an example of an intermediate member according to this embodiment. The base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a and 504b formed on the upper surface of the ceramic substrate 504c, and a conductor pattern 504d formed on the lower surface of the ceramic substrate 504c. The external electrode 501b is connected to the positive conductor pattern 504a and the negative conductor pattern 504b by a solder joint 211. The solder joint portion 211 corresponds to an example of the joining material according to the present embodiment. Solder resists 503a and 503b are formed on the positive conductor pattern 504a and the negative conductor pattern 504b to prevent the solder from spreading. A capacitor 209 is mounted on the solder resist 503b. The thickness of the solder resists 503a and 503b is, for example, not less than 10 μm and not more than 30 μm. The melted solder is spread by the weight of the capacitor 209 to form a solder joint portion 211 connected to the ceramic capacitor external electrode 501b. Therefore, the thickness of the solder disposed between the ceramic capacitor external electrode 501b and the conductive pattern 504a of the base insulating substrate 203 can be ensured only approximately equal to the thickness of the solder resist 503b. For this reason, when the thickness of the solder resist 503b is not sufficient, there is a problem that only the thickness of the solder joint portion 211 that is insufficient to obtain the joint life required as the joint reliability of the power module can be secured. .
　抵抗体２１０はその抵抗値がたとえば１Ω以上２０Ω以下程度であれば、リンギング抑制効果が大きい。図６に示すように、抵抗体２１０は、ベース絶縁基板２０３の正極側の導体パターン５０４ａと負極側の導体パターン５０４ｂとの間に直接形成されていてもよい。具体的には、抵抗体２１０は、導体パターン５０４ａの端部と導体パターン５０４ｂの端部とが対向する部分において、導体パターン５０４ａと導体パターン５０４ｂとの間にて露出するセラミック基板５０４ｃの表面上から導体パターン５０４ａ、５０４ｂの上記端部上にまで延びるように形成されている。抵抗体２１０は導体パターン５０４ａ、５０４ｂの上記端部と接続されている。 If the resistance value of the resistor 210 is, for example, about 1Ω to 20Ω, the ringing suppression effect is large. As shown in FIG. 6, the resistor 210 may be directly formed between the positive conductor pattern 504 a and the negative conductor pattern 504 b of the base insulating substrate 203. Specifically, the resistor 210 is formed on the surface of the ceramic substrate 504c exposed between the conductor pattern 504a and the conductor pattern 504b at a portion where the end of the conductor pattern 504a and the end of the conductor pattern 504b face each other. To the end portions of the conductor patterns 504a and 504b. The resistor 210 is connected to the end portions of the conductor patterns 504a and 504b.
　このような抵抗体２１０の製造方法としては、以下のような方法を用いることができる。たとえば、ベース絶縁基板２０３の製造工程における焼成工程前に、ベース絶縁基板２０３となるべき基板材料の表面に抵抗体２１０となるペースト剤を配置する。ペースト剤は、酸化ルテニウム（ＲｕＯ２）などの導体成分および固結剤などからなる。ペースト剤は抵抗体２１０が形成されるべき領域に印刷法などを用いて配置する。固結剤は、セラミック基板５０４ｃへ抵抗体２１０を付着させるために用いられる。その後、当該ペースト剤が塗布された基板材料を焼成してベース絶縁基板２０３を製造すると同時に、ペースト剤を加熱することで抵抗体２１０を形成する。 As a method for manufacturing such a resistor 210, the following method can be used. For example, before the baking process in the manufacturing process of the base insulating substrate 203, a paste agent that becomes the resistor 210 is disposed on the surface of the substrate material to be the base insulating substrate 203. The paste agent is made of a conductor component such as ruthenium oxide (RuO 2 ) and a binder. The paste agent is disposed in a region where the resistor 210 is to be formed using a printing method or the like. The caking agent is used to adhere the resistor 210 to the ceramic substrate 504c. After that, the base material to which the paste agent is applied is baked to produce the base insulating substrate 203, and at the same time, the resistor 210 is formed by heating the paste agent.
　また、上述のようにベース絶縁基板２０３上に直接抵抗体２１０を形成する方法ではなく、図７に示すように支持体としてのセラミック板５０６ｂ上に抵抗膜５０６ａを形成した部品単体として抵抗体２１０を準備してもよい。図７に示す抵抗体２１０は、ベース絶縁基板２０３の表面上に配置されている。ベース絶縁基板２０３は、セラミック基板５０４ｃと、セラミック基板５０４ｃの表面上に配置された導体パターン５０４ａ、５０４ｂ、５０４ｅと、セラミック基板５０４ｃの裏面上に配置された導体パターン５０４ｄとを含む。抵抗体２１０は導体パターン５０４ｅの表面上にはんだ５０８を介して接続されている。はんだ５０８は抵抗体２１０のセラミック板５０６ｂと導体パターン５０４ｅとを接続する。 In addition, the resistor 210 is not directly formed on the base insulating substrate 203 as described above, but as a single component in which the resistor film 506a is formed on the ceramic plate 506b as a support as shown in FIG. May be prepared. The resistor 210 shown in FIG. 7 is disposed on the surface of the base insulating substrate 203. The base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a, 504b, and 504e disposed on the surface of the ceramic substrate 504c, and a conductor pattern 504d disposed on the back surface of the ceramic substrate 504c. The resistor 210 is connected to the surface of the conductor pattern 504e via a solder 508. The solder 508 connects the ceramic plate 506b of the resistor 210 and the conductor pattern 504e.
　セラミック板５０６ｂはアルミナ（Ａｌ２Ｏ３）および窒化アルミニウム（ＡｌＮ）などのセラミックスからなる。なお、導体パターン５０４ｅは正極用の導体パターン５０４ａもしくは負極用の導体パターン５０４ｂのいずれかと接続してあってもよい。抵抗体２１０の上面に複数のボンディングパッド５０６ｃを形成しておいてもよい。正極用の導体パターン５０４ａと負極用の導体パターン５０４ｂとは、導体パターン５０４ａとボンディングパッド５０６ｃとを繋ぐようにボンディングされた配線材５０７と、導体パターン５０４ｂと他のボンディングパッド５０６ｃとを繋ぐようにボンディングされた配線材５０７と、抵抗体２１０とを介して電気的に接続されていてもよい。 The ceramic plate 506b is made of ceramics such as alumina (Al 2 O 3 ) and aluminum nitride (AlN). The conductor pattern 504e may be connected to either the positive conductor pattern 504a or the negative conductor pattern 504b. A plurality of bonding pads 506 c may be formed on the upper surface of the resistor 210. The conductor pattern 504a for the positive electrode and the conductor pattern 504b for the negative electrode are connected so that the wiring material 507 bonded so as to connect the conductor pattern 504a and the bonding pad 506c, and the conductor pattern 504b and another bonding pad 506c. The wiring member 507 bonded and the resistor 210 may be electrically connected.
　ここで、図２に示したベース板２０１はＡｌＳｉＣ板やＣｕ板でも良いが、電力用半導体装置を使用するに当たり十分な強度を有するのであれば、図８に示すように、ベース板２０１（図２参照）が無い構造、すなわちベース絶縁基板２０３の裏面側の導体層２０３ｉがそのまま露出していてもよい。導体層２０３ｉはたとえば銅（Ｃｕ）からなっていてもよい。図８は、上述した電力用半導体モジュールの変形例の断面を示す模式図である。図８に示した電力用半導体モジュールは、基本的には図２に示した電力用半導体モジュールと同様の構成を備えるが、ベース板２０１（図２参照）を備えていない点、およびベース絶縁基板２０３の外周部に直接ケース２０２が接続されている点、およびコンデンサ２０９の形状が、図２に示した電力用半導体モジュールと異なっている。図８に示した電力用半導体モジュールにおけるコンデンサ２０９は、コンデンサ本体３０６ａに金属端子３０６ｂが接続された構造を有する。金属端子３０６ｂはコンデンサ本体３０６ａの端面側に接続されている。金属端子３０６ｂはコンデンサ本体３０６ａの下側に向けて延びるように形成されている。金属端子３０６ｂの下側の端部が導体パターン２０３ｅ、２０３ｆとはんだ接合部２１１を介して接続されている。コンデンサ本体３０６ａと絶縁材２０３ｂとの間には空間が形成されている。図８に示した構成では、コンデンサ本体３０６ａが本実施の形態に係るコンデンサの一例に相当する。また、金属端子３０６ｂが本実施の形態に係る中間部材の一例に相当する。また、はんだ接合部２１１が本実施の形態に係る接合材の一例に相当する。 Here, the base plate 201 shown in FIG. 2 may be an AlSiC plate or a Cu plate. However, if the base plate 201 has sufficient strength to use the power semiconductor device, as shown in FIG. 2), that is, the conductor layer 203i on the back surface side of the base insulating substrate 203 may be exposed as it is. The conductor layer 203i may be made of, for example, copper (Cu). FIG. 8 is a schematic diagram showing a cross section of a modified example of the power semiconductor module described above. The power semiconductor module shown in FIG. 8 basically has the same configuration as that of the power semiconductor module shown in FIG. 2, but does not include the base plate 201 (see FIG. 2), and the base insulating substrate. The point that the case 202 is directly connected to the outer peripheral part of 203 and the shape of the capacitor 209 are different from the power semiconductor module shown in FIG. The capacitor 209 in the power semiconductor module shown in FIG. 8 has a structure in which a metal terminal 306b is connected to a capacitor body 306a. The metal terminal 306b is connected to the end face side of the capacitor body 306a. The metal terminal 306b is formed to extend toward the lower side of the capacitor body 306a. The lower end of the metal terminal 306b is connected to the conductor patterns 203e and 203f via the solder joints 211. A space is formed between the capacitor body 306a and the insulating material 203b. In the configuration shown in FIG. 8, the capacitor body 306a corresponds to an example of the capacitor according to the present embodiment. Further, the metal terminal 306b corresponds to an example of an intermediate member according to the present embodiment. Also, the solder joint portion 211 corresponds to an example of the joining material according to the present embodiment.
　ここで、コンデンサ２０９を導体パターン２０３ｅ、２０３ｆとはんだ付けする場合、はんだ付けされる導体パターン２０３ｅ、２０３ｆがたとえばＣｕから構成されていると、当該導体パターン２０３ｅ、２０３ｆとコンデンサ２０９との線膨張率の差に起因して、はんだ付け時のはんだ材の凝固収縮、ベース絶縁基板２０３の反り変形、さらにはベース板２０１（図２参照）の反り変形が発生する。この結果、コンデンサ２０９が割れる、あるいははんだ接合部２１１の接合部寿命が極端に低下するといった問題が発生する。さらに、抵抗体２１０を備えている場合、抵抗体２１０が導体パターン２０３ｄ、２０３ｅから剥離する、あるいは抵抗体２１０のはんだ接合部の寿命が極端に低下する、といった問題があった。 Here, when the capacitor 209 is soldered to the conductor patterns 203e and 203f, if the conductor patterns 203e and 203f to be soldered are made of Cu, for example, the linear expansion coefficient between the conductor patterns 203e and 203f and the capacitor 209 Due to this difference, solidification shrinkage of the solder material during soldering, warping deformation of the base insulating substrate 203, and warping deformation of the base plate 201 (see FIG. 2) occur. As a result, there arises a problem that the capacitor 209 is broken or the joint life of the solder joint 211 is extremely reduced. Further, when the resistor 210 is provided, there is a problem that the resistor 210 is peeled off from the conductor patterns 203d and 203e or the life of the solder joint portion of the resistor 210 is extremely reduced.
　このような問題を解決するために、前述のエポキシ樹脂からなる封止体２０５により電力用半導体モジュール内部を封止する事により、エポキシ樹脂が導体パターン２０３ａ、２０３ｄ～２０３ｆ、コンデンサ２０９、および抵抗体２１０と十分に密着しているだけでなく、ベース絶縁基板２０３またはベース板２０１（図２参照）の反りや変形を抑制できる。このため、コンデンサ２０９のコンデンサ本体部５０１ａ、３０６ａに発生する応力、抵抗体２１０の抵抗膜に発生する応力、およびはんだ接合部２１１に発生する応力を低減させる事が可能となる。 In order to solve such a problem, the inside of the power semiconductor module is sealed with the sealing body 205 made of the above-described epoxy resin, so that the epoxy resin becomes the conductor patterns 203a, 203d to 203f, the capacitor 209, and the resistor. In addition to being in close contact with 210, warping and deformation of the base insulating substrate 203 or the base plate 201 (see FIG. 2) can be suppressed. For this reason, it is possible to reduce the stress generated in the capacitor main body portions 501a and 306a of the capacitor 209, the stress generated in the resistance film of the resistor 210, and the stress generated in the solder joint portion 211.
　更には、通電時にコンデンサ２０９や抵抗体２１０は発熱する。このコンデンサ２０９および抵抗体２１０の自己発熱により、コンデンサ２０９や抵抗体２１０の電気特性は変動してしまう。このため、上述した自己発熱に起因する熱を効率的に外部へ放出する必要がある。封止体２０５としてゲル材料を用いる場合と比較して、当該ゲル材料より熱伝導率が大きいエポキシ樹脂を封止体２０５として用いる事により、電力用半導体モジュールの放熱性が向上する。エポキシ樹脂の熱伝導率は混廉するフィラーの種類や含有量により調整が可能である。また、前述の通りフィラーの種類および含有量は硬化したエポキシ樹脂の線膨張特性とも密接に関連する。このため、封止体２０５の熱伝導率は０．５Ｗ／ｍ・Ｋ以上５Ｗ／ｍ・Ｋ以下である事が好ましい。 Furthermore, the capacitor 209 and the resistor 210 generate heat when energized. Due to the self-heating of the capacitor 209 and the resistor 210, the electrical characteristics of the capacitor 209 and the resistor 210 change. For this reason, it is necessary to efficiently release the heat caused by the above-described self-heating to the outside. Compared with the case where a gel material is used as the sealing body 205, the heat dissipation of the power semiconductor module is improved by using an epoxy resin having a thermal conductivity higher than that of the gel material as the sealing body 205. The thermal conductivity of the epoxy resin can be adjusted by the kind and content of fillers that are mixed. Further, as described above, the type and content of the filler are closely related to the linear expansion characteristics of the cured epoxy resin. For this reason, it is preferable that the thermal conductivity of the sealing body 205 is 0.5 W / m · K or more and 5 W / m · K or less.
　特に、図８で示すように、図２で示したベース板２０１がなく絶縁材２０３ｂの裏面に直接接するように形成されたＣｕからなる導体層２０３ｉが露出している構造では、通電時の半導体素子２０４の発熱による導体層２０３ｉの線膨張に整合して当該導体層２０３ｉなどの反り変形を抑制するため、エポキシ樹脂による封止体２０５を用いることが好ましい。具体的には、硬化した際のエポキシ樹脂の線膨張率がＣｕの線膨張率１６．８ｐｐｍ／℃に近い値になるように、フィラー材の材質およびフィラー含有量を調整したエポキシ樹脂を封止体２０５として用いる事が好ましい。 In particular, as shown in FIG. 8, in the structure in which the conductor layer 203i made of Cu formed so as to be in direct contact with the back surface of the insulating material 203b without the base plate 201 shown in FIG. In order to match the linear expansion of the conductor layer 203i due to heat generation of the element 204 and suppress warping deformation of the conductor layer 203i and the like, it is preferable to use a sealing body 205 made of an epoxy resin. Specifically, an epoxy resin whose filler material and filler content are adjusted so that the linear expansion coefficient of the epoxy resin when cured is close to the Cu linear expansion coefficient of 16.8 ppm / ° C. It is preferable to use as the body 205.
　更には、導体層２０３ｉの反り挙動は、導体層２０３ｉ上の構造、具体的には絶縁材２０３ｂ、導体パターン２０３ａ、２０３ｄ～２０３ｆ、２０３ｈ、スイッチング素子２０４ａおよび還流ダイオード２０４ｂなどの半導体素子２０４といった構成部材の影響を受ける。そのため、封止体２０５を構成するエポキシ材の線膨張率は１６．８ｐｐｍ／℃に限定する必要はなく、線膨張率を１０ｐｐｍ／℃以上２０ｐｐｍ／℃以下の範囲で適宜選択することにより、導体層２０３ｉの反り挙動を抑制してもよい。 Furthermore, the warping behavior of the conductor layer 203i is caused by the structure on the conductor layer 203i, specifically, the insulating material 203b, the conductor patterns 203a, 203d to 203f, 203h, the semiconductor element 204 such as the switching element 204a and the free wheel diode 204b. Influenced by members. Therefore, it is not necessary to limit the linear expansion coefficient of the epoxy material constituting the sealing body 205 to 16.8 ppm / ° C., and by appropriately selecting the linear expansion coefficient in the range of 10 ppm / ° C. to 20 ppm / ° C. The warping behavior of the layer 203i may be suppressed.
　また、図９に示す通り、コンデンサ２０９が覆われる高さまでエポキシ材からなる封止体２０５によって封止した後、たとえば封止体２０５とは異なる材料からなる上部封止体２１５を封止体２０５上に配置してもよい。上部封止体２１５としてはたとえば絶縁材を用いてもよい。 Further, as shown in FIG. 9, after sealing with a sealing body 205 made of an epoxy material up to a height at which the capacitor 209 is covered, for example, an upper sealing body 215 made of a material different from the sealing body 205 is sealed. You may arrange on top. For example, an insulating material may be used as the upper sealing body 215.
　具体的には、コンデンサ２０９の高さは当該コンデンサ２０９に必要な静電容量により任意に選択されるものであるが、当該高さはたとえば１ｍｍ以上３．５ｍｍ以下の範囲である。そのため、導体パターン２０３ａから封止体２０５の上部表面までの高さは少なくとも１ｍｍ以上である事が好ましい。一方で、配線部材２０６のループ高さは、ループ高さが高くなる事で配線インダクタンスが大きくなる事から、できるだけ低い方が好ましい。たとえば、導体パターン２０３ａから配線部材２０６のループの最高部である頂部までの高さが４ｍｍ以下である事が好ましい。また、封止体２０５は、配線部材２０６と半導体素子２０４との接合部および配線部材２０６を封止するので、配線部材２０６の上記接合部を補強する事が可能となる効果が得られるだけでなく、封止体２０５として高価なエポキシ材を用いる場合に、当該エポキシ材の使用量を少なくする事が出来るという効果も得られる。 Specifically, the height of the capacitor 209 is arbitrarily selected depending on the capacitance required for the capacitor 209, and the height is, for example, in the range of 1 mm to 3.5 mm. Therefore, the height from the conductor pattern 203a to the upper surface of the sealing body 205 is preferably at least 1 mm. On the other hand, the loop height of the wiring member 206 is preferably as low as possible because the wiring inductance increases as the loop height increases. For example, it is preferable that the height from the conductor pattern 203a to the top which is the highest part of the loop of the wiring member 206 is 4 mm or less. In addition, since the sealing body 205 seals the joint portion between the wiring member 206 and the semiconductor element 204 and the wiring member 206, only the effect that the joint portion of the wiring member 206 can be reinforced can be obtained. In addition, when an expensive epoxy material is used as the sealing body 205, an effect that the amount of the epoxy material used can be reduced is also obtained.
　ここで封止体２１５は、封止体２０５と同じ材質を用いてもよいが、封止体２０５と異なる物性の材料を用いてもよい。例えば、封止体２１５の材料として、シリコンゲルを用いてもよく、封止体２０５とはフィラーの種類および含有量の少なくともいずれか一方を変更したエポキシ樹脂を用いてもよい。しかしながら、配線部材２０６のループの途中で封止体が異なる材料になる、つまり配線部材２０６のループの途中に封止体２０５と封止体２１５との界面が位置する構造となると、封止体２０５と封止体２１５との線膨張率の違いから、配線部材２０６のループが応力を受ける。具体的には、上記界面近傍の配線部材２０６のループは、電力用半導体モジュールの使用中の発熱によって繰り返し発生する封止体２０５、２１５の膨張収縮に起因する応力を受けて細り、結果的に疲労破壊が生じる場合がある。そのため、封止体２０５の高さは、配線部材２０６およびコンデンサ２０９のいずれもが覆われる高さであることが好ましい。 Here, the same material as that of the sealing body 205 may be used for the sealing body 215, but a material having physical properties different from that of the sealing body 205 may be used. For example, silicon gel may be used as the material of the sealing body 215, and the sealing body 205 may be an epoxy resin in which at least one of the filler type and content is changed. However, when the sealing body is made of a different material in the middle of the loop of the wiring member 206, that is, when the interface between the sealing body 205 and the sealing body 215 is located in the middle of the loop of the wiring member 206, the sealing body Due to the difference in the linear expansion coefficient between 205 and the sealing body 215, the loop of the wiring member 206 receives stress. Specifically, the loop of the wiring member 206 in the vicinity of the interface is subjected to stress due to the expansion and contraction of the sealing bodies 205 and 215 that are repeatedly generated due to heat generation during use of the power semiconductor module. Fatigue failure may occur. Therefore, it is preferable that the height of the sealing body 205 is a height at which both the wiring member 206 and the capacitor 209 are covered.
　上述した電力用半導体モジュールの特徴的な構成を要約すれば、図１および図２に示した電力用半導体モジュールは、少なくとも１つの半導体素子２０４と、導体パターン２０３ａ、２０３ｄ～２０３ｆと、少なくとも１つのスナバ回路１０６と、封止体２０５とを備える。半導体素子２０４の一例としては、たとえば少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐと、少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎとが挙げられる。導体パターン２０３ａには、少なくとも１つの半導体素子２０４が接続される。少なくとも１つのスナバ回路１０６は、コンデンサとしてのコンデンサ本体３０６ａ（図８参照）と抵抗体２１０とが直列に接続された回路である。封止体２０５は、少なくとも１つの半導体素子２０４、導体層としての導体パターン２０３ｄ～２０３ｆ、コンデンサ本体３０６ａおよび抵抗体２１０を封止する。コンデンサ本体３０６ａは、中間部材としての金属端子３０６ｂ（図８参照）と接続される。接合材としてのはんだ接合部２１１により金属端子３０６ｂが導体パターン２０３ｅ、２０３ｆに接続されている。なお、封止体２０５は、図８に示すように少なくとも１つの半導体素子２０４、導体層としての導体パターン２０３ｄ～２０３ｆ、コンデンサ本体３０６ａ、中間部材としての金属端子３０６ｂ、接合材としてのはんだ接合部２１１、および抵抗体２１０を封止してもよい。つまり、封止体２０５はベース絶縁基板２０３上に配置されたすべての構成要素を封止してもよい。 To summarize the characteristic configuration of the power semiconductor module described above, the power semiconductor module shown in FIGS. 1 and 2 includes at least one semiconductor element 204, conductor patterns 203a, 203d to 203f, and at least one semiconductor element. A snubber circuit 106 and a sealing body 205 are provided. As an example of the semiconductor element 204, for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N. At least one semiconductor element 204 is connected to the conductor pattern 203a. At least one snubber circuit 106 is a circuit in which a capacitor body 306a (see FIG. 8) as a capacitor and a resistor 210 are connected in series. The sealing body 205 seals at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, the capacitor body 306a, and the resistor 210. The capacitor body 306a is connected to a metal terminal 306b (see FIG. 8) as an intermediate member. The metal terminal 306b is connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material. As shown in FIG. 8, the sealing body 205 includes at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, a capacitor body 306a, a metal terminal 306b as an intermediate member, and a solder joint as a bonding material. 211 and the resistor 210 may be sealed. That is, the sealing body 205 may seal all the components arranged on the base insulating substrate 203.
　また、異なる観点から言えば、図１および図２に示した電力用半導体モジュールは、少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐと、少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎと、導体パターン２０３ａと、導体層としての導体パターン２０３ｄ～２０３ｆと、少なくとも１つのスナバ回路１０６と、封止体２０５とを備える。導体パターン２０３ａには、少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐ、および少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎ、のいずれか一方である半導体素子２０４が接続される。導体層としての導体パターン２０３ｄ～２０３ｆは、導体パターン２０３ａと同一レイヤにより構成される。少なくとも１つのスナバ回路１０６は、コンデンサ２０９と抵抗体２１０とが直列に接続された回路である。封止体２０５は、少なくとも１つの正極側電力用半導体素子、少なくとも１つの負極側電力用半導体素子、導体層としての導体パターン２０３ｄ～２０３ｆ、コンデンサ２０９および抵抗体２１０を封止する。コンデンサ２０９および抵抗体２１０の少なくともいずれか一方は、導体層としての導体パターン２０３ｄ～２０３ｆに接続される。封止体２０５はエポキシ樹脂を含む。 From a different point of view, the power semiconductor module shown in FIGS. 1 and 2 includes at least one positive-side power semiconductor element, that is, a positive-side switching element 103P and a positive-side reflux diode 104P, and at least one negative-electrode. Negative electrode side switching element 103N and negative electrode side reflux diode 104N, which are side power semiconductor elements, conductor pattern 203a, conductor patterns 203d to 203f as conductor layers, at least one snubber circuit 106, and sealing body 205 Prepare. The conductor pattern 203a includes at least one positive-side power semiconductor element 103P and a positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and a negative-side reflux circuit. The semiconductor element 204, which is one of the diodes 104N, is connected. The conductor patterns 203d to 203f as the conductor layers are formed of the same layer as the conductor pattern 203a. At least one snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series. The sealing body 205 seals at least one positive power semiconductor element, at least one negative power semiconductor element, conductor patterns 203d to 203f as a conductor layer, a capacitor 209, and a resistor 210. At least one of the capacitor 209 and the resistor 210 is connected to conductor patterns 203d to 203f as conductor layers. The sealing body 205 includes an epoxy resin.
　＜作用効果＞
　図１～図９に示した電力用半導体モジュールによれば、導体パターン２０３ｄ～２０３ｇ、２３０ｃ～２３０ｆとコンデンサ２０９、２０９ａ、２０９ｂまたは抵抗体２１０との接合部の実装が容易なため当該接合部を信頼性高く形成することができる。このため、スナバ回路１０６によりリンギングを抑制できるとともに、コンデンサ２０９、２０９ａ、２０９ｂまたは抵抗体２１０と導体パターン２０３ｄ～２０３ｇ、２３０ｃ～２３０ｆとの接合部の不良などに起因する問題の発生を抑制できる。さらに、封止体２０５としてエポキシ樹脂を用いるため、導体パターン２０３ａ、２０３ｄ～２０３ｆ、２３０ｃ～２３０ｆの変形を封止体２０５により抑制できる。このため、当該導体パターン２０３ｄ～２０３ｆ、２３０ｃ～２３０ｆとコンデンサ２０９、２０９ａ、２０９ｂまたは抵抗体２１０との接合部における上記変形に起因する応力の発生を抑制できる。この結果、信頼性の高い電力用半導体モジュールを得ることができる。 <Effect>
According to the power semiconductor module shown in FIG. 1 to FIG. 9, since it is easy to mount the junction between the conductor patterns 203d to 203g, 230c to 230f and the capacitors 209, 209a, 209b or the resistor 210, the junction is It can be formed with high reliability. For this reason, ringing can be suppressed by the snubber circuit 106, and occurrence of problems due to defects in the joints between the capacitors 209, 209a, 209b or the resistor 210 and the conductor patterns 203d to 203g, 230c to 230f can be suppressed. Further, since the epoxy resin is used as the sealing body 205, the deformation of the conductor patterns 203a, 203d to 203f, 230c to 230f can be suppressed by the sealing body 205. For this reason, it is possible to suppress the occurrence of stress due to the above deformation at the joint between the conductor patterns 203d to 203f, 230c to 230f and the capacitors 209, 209a, 209b or the resistor 210. As a result, a highly reliable power semiconductor module can be obtained.
　さらに、図１および図２に示した電力用半導体モジュールでは、スナバ回路１０６を構成するコンデンサ２０９と抵抗体２１０との少なくとも一方が導体パターン２０３ａと同一レイヤにより構成される導体パターン２０３ｄ～２０３ｆに接続されているので、電力用半導体素子が実装される基板とは別の基板をスナバ回路用に準備する場合より電力用半導体モジュールの構成を簡略化できる。また、図３および図４に示したスナバ回路用基板２３０に実装されたスナバ回路を含む電力用半導体モジュールでは、当該スナバ回路用基板２３０にあらかじめコンデンサ２０９ａ、２０９ｂ、抵抗体２１０、２３３ａ、２３３ｂなどを実装してスナバ回路を準備しておくことができるので、当該スナバ回路を異なる構成の電力用半導体モジュールに適用することができる。 Further, in the power semiconductor module shown in FIGS. 1 and 2, at least one of the capacitor 209 and the resistor 210 constituting the snubber circuit 106 is connected to the conductor patterns 203d to 203f constituted by the same layer as the conductor pattern 203a. Therefore, the configuration of the power semiconductor module can be simplified as compared with the case where a substrate different from the substrate on which the power semiconductor element is mounted is prepared for the snubber circuit. Further, in the power semiconductor module including the snubber circuit mounted on the snubber circuit board 230 shown in FIGS. 3 and 4, the capacitors 209a and 209b, the resistors 210, 233a, and 233b, etc. are provided on the snubber circuit board 230 in advance. Since the snubber circuit can be prepared by mounting the snubber circuit, the snubber circuit can be applied to power semiconductor modules having different configurations.
　上記電力用半導体モジュールにおいて、封止体２０５は、熱伝導率が０．５Ｗ／ｍ・Ｋ以上５Ｗ／ｍ・Ｋ以下であってもよい。封止体２０５は、線膨張係数が１０ｐｐｍ／℃以上２０ｐｐｍ／℃以下であってもよい。 In the power semiconductor module, the sealing body 205 may have a thermal conductivity of 0.5 W / m · K to 5 W / m · K. The sealing body 205 may have a linear expansion coefficient of 10 ppm / ° C. or more and 20 ppm / ° C. or less.
　この場合、電力用半導体モジュールの使用時にコンデンサ２０９が発熱したときに、封止体２０５を介して当該コンデンサ２０９の熱を電力用半導体モジュールの外部へ容易に放出することができる。このため、コンデンサ２０９の温度が過剰に上昇することを防止できる。この結果、コンデンサ２０９の温度特性が電力用半導体モジュールの電気的特性に影響を与えることを防止し、安定した電気的特性を示す電力用半導体モジュールを実現できる。同様に、電力用半導体モジュールの使用時に抵抗体２１０が発熱したときに、封止体２０５を介して当該抵抗体２１０の熱を電力用半導体モジュールの外部へ容易に放出することができる。このため、抵抗体２１０の温度が過剰に上昇することを防止できる。この結果、抵抗体２１０の温度特性が電力用半導体モジュールの電気的特性に影響を与えることを防止し、安定した電気的特性を示す電力用半導体モジュールを実現できる。 In this case, when the capacitor 209 generates heat when the power semiconductor module is used, the heat of the capacitor 209 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it is possible to prevent the temperature of the capacitor 209 from rising excessively. As a result, the temperature characteristics of the capacitor 209 can be prevented from affecting the electrical characteristics of the power semiconductor module, and a power semiconductor module that exhibits stable electrical characteristics can be realized. Similarly, when the resistor 210 generates heat during use of the power semiconductor module, the heat of the resistor 210 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it can prevent that the temperature of the resistor 210 rises excessively. As a result, it is possible to prevent the temperature characteristics of the resistor 210 from affecting the electrical characteristics of the power semiconductor module, and to realize a power semiconductor module that exhibits stable electrical characteristics.
　上記電力用半導体モジュールにおいて、封止体２０５は、コンデンサ２０９が埋設された状態となるように配置されている。図９に示すように、電力用半導体モジュールは、封止体２０５上に配置された上部封止体２１５をさらに備える。 In the power semiconductor module, the sealing body 205 is arranged so that the capacitor 209 is embedded. As shown in FIG. 9, the power semiconductor module further includes an upper sealing body 215 disposed on the sealing body 205.
　この場合、コンデンサ２０９などの電力用半導体モジュールの構成部材に接触する領域は封止体２０５を配置し、当該構成部材と直接接触しない部分には、たとえば封止体２０５とは別の絶縁体などからなる上部封止体２１５を配置するので、エポキシ樹脂を含む封止体２０５の使用量を低減できる。したがって、上部封止体２１５として封止体２０５よりコストの安価な材料を用いることで、電力用半導体モジュールの製造コストを低減できる。 In this case, the sealing body 205 is disposed in a region that contacts the constituent member of the power semiconductor module such as the capacitor 209, and an insulator other than the sealing body 205 is provided in a portion that does not directly contact the constituent member. Since the upper sealing body 215 made of is disposed, the amount of the sealing body 205 containing an epoxy resin can be reduced. Therefore, the manufacturing cost of the power semiconductor module can be reduced by using a lower cost material than the sealing body 205 as the upper sealing body 215.
　上記電力用半導体モジュールにおいて、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子である半導体素子２０４は、ワイドバンドギャップ半導体からなる。この場合、上記半導体素子２０４がワイドバンドギャップ半導体からなるため、リンギングの抑制に加え、高速スイッチング動作および高温動作が可能になる。 In the power semiconductor module, the semiconductor element 204 which is at least one positive power semiconductor element and at least one negative power semiconductor element is formed of a wide band gap semiconductor. In this case, since the semiconductor element 204 is made of a wide band gap semiconductor, in addition to suppressing ringing, high-speed switching operation and high-temperature operation are possible.
　上記電力用半導体モジュールにおいて、ワイドバンドギャップ半導体は、炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンド、酸化ガリウムからなる群から選択される１つである。この場合、上記のような半導体材料により半導体素子２０４を構成することで、リンギングの抑制、高速スイッチング動作、高温動作に加え、高耐圧化が可能な電力用半導体モジュールを得ることができる。 In the power semiconductor module, the wide band gap semiconductor is one selected from the group consisting of silicon carbide (SiC), gallium nitride (GaN), diamond, and gallium oxide. In this case, by configuring the semiconductor element 204 with the semiconductor material as described above, it is possible to obtain a power semiconductor module capable of increasing the breakdown voltage in addition to suppressing ringing, high-speed switching operation, and high-temperature operation.
　実施の形態２．
　上述した実施の形態１に係る電力用半導体モジュールにおいては、封止体２０５としてエポキシ樹脂を用いた構成を特徴として説明した。一方、以下説明する実施の形態２に係る電力用半導体モジュールでは、これに限らず、コンデンサ２０９のセラミック割れを抑制し、はんだ接合部２１１の長寿命化を図る手段について図１０を用いて説明する。図１０は、本発明の実施の形態２に係る電力用半導体モジュールの部分断面を示す模式図である。 Embodiment 2. FIG.
In the power semiconductor module according to the first embodiment described above, the configuration using an epoxy resin as the sealing body 205 has been described as a feature. On the other hand, the power semiconductor module according to the second embodiment described below is not limited to this, and means for suppressing ceramic cracking of the capacitor 209 and extending the life of the solder joint 211 will be described with reference to FIG. . FIG. 10 is a schematic diagram showing a partial cross section of the power semiconductor module according to the second embodiment of the present invention.
　図１０に示す電力用半導体モジュールは、基本的には実施の形態１に係る電力用半導体モジュールと同様の構成を備えるが、コンデンサ２０９として金属端子付きセラミックコンデンサを適用する。コンデンサ２０９は、端面に形成された外部電極を含むコンデンサ本体３０６ａと、コンデンサ本体３０６ａの外部電極に接続された金属端子３０６ｂとを主に含む。異なる観点から言えば、本開示に従った電力用半導体モジュールは、少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐと、少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎと、導体パターン３０３ａと、導体層としての導体パターン３０３ｂ、３０３ｃと、少なくとも１つのスナバ回路とを備える。導体パターン３０３ａには、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子のいずれか一方である半導体素子２０４が接続される。導体パターン３０３ｂ、３０３ｃは、導体パターン３０３ａと同一レイヤにより構成される。少なくとも１つのスナバ回路は、コンデンサ２０９と抵抗体２１０（図１参照）とが直列に接続された回路である。コンデンサ２０９および抵抗体２１０の少なくともいずれか一方は、導体パターン３０３ｂ、３０３ｃに接続される。コンデンサ２０９は、コンデンサ本体３０６ａと、コンデンサ本体３０６ａに接続された金属端子３０６ｂとを含む。金属端子３０６ｂは導体パターン３０３ｂ、３０３ｃに接続さている。 The power semiconductor module shown in FIG. 10 basically has the same configuration as that of the power semiconductor module according to the first embodiment, but a ceramic capacitor with a metal terminal is applied as the capacitor 209. Capacitor 209 mainly includes a capacitor body 306a including an external electrode formed on an end face, and a metal terminal 306b connected to the external electrode of capacitor body 306a. From a different point of view, the power semiconductor module according to the present disclosure includes at least one positive electrode side switching semiconductor element 103P and positive electrode side freewheeling diode 104P, which are positive electrode power semiconductor elements, and at least one negative electrode power semiconductor element. Negative electrode side switching element 103N and negative electrode side reflux diode 104N, conductor pattern 303a, conductor patterns 303b and 303c as conductor layers, and at least one snubber circuit. A semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element is connected to the conductor pattern 303a. The conductor patterns 303b and 303c are configured by the same layer as the conductor pattern 303a. At least one snubber circuit is a circuit in which a capacitor 209 and a resistor 210 (see FIG. 1) are connected in series. At least one of the capacitor 209 and the resistor 210 is connected to the conductor patterns 303b and 303c. Capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to capacitor body 306a. The metal terminal 306b is connected to the conductor patterns 303b and 303c.
　このような構成により、はんだ付け時に発生する応力を金属端子３０６ｂで吸収することができる。このため、コンデンサ本体３０６ａの割れを防ぐ事が可能になるだけでなく、導体パターン３０３ｂ、３０３ｃと金属端子３０６ｂのはんだ接合部３０７に発生する応力を低減できる。この結果、はんだ接合部３０７の長期信頼性が向上すると言う従来にない効果を得る事が出来る。 With such a configuration, the stress generated during soldering can be absorbed by the metal terminal 306b. For this reason, it becomes possible not only to prevent the capacitor main body 306a from cracking but also to reduce the stress generated at the solder joints 307 between the conductor patterns 303b and 303c and the metal terminal 306b. As a result, an unprecedented effect that the long-term reliability of the solder joint portion 307 is improved can be obtained.
　以下、図１０を用いてより詳細に説明する。図１０に示した電力用半導体モジュールでは、銅（Ｃｕ）からなるベース部材３０５の上に絶縁層３０４が形成されている。絶縁層３０４上には導体パターン３０３ａ、３０３ｂ、３０３ｃが形成されている。導体パターン３０３ａ上には電力用の半導体素子２０４がダイボンド材３０２により接合されている。半導体素子２０４が搭載された導体パターン３０３ａと同一面に位置し、同一レイヤにより構成される導体パターンとして導体パターン３０３ｂと導体パターン３０３ｃとがそれぞれ形成されている。導体パターン３０３ｂと導体パターン３０３ｃとは金属端子付きセラミックコンデンサであるコンデンサ２０９により接続されている。なお、導体パターン３０３ａと導体パターン３０３ｂとは例えば配線部材２０６により接続されている。 Hereinafter, this will be described in more detail with reference to FIG. In the power semiconductor module shown in FIG. 10, an insulating layer 304 is formed on a base member 305 made of copper (Cu). Conductive patterns 303a, 303b, and 303c are formed on the insulating layer 304. A power semiconductor element 204 is bonded onto the conductor pattern 303 a by a die bond material 302. A conductor pattern 303b and a conductor pattern 303c are formed as conductor patterns that are located on the same plane as the conductor pattern 303a on which the semiconductor element 204 is mounted and are configured by the same layer. The conductor pattern 303b and the conductor pattern 303c are connected by a capacitor 209 that is a ceramic capacitor with a metal terminal. The conductor pattern 303a and the conductor pattern 303b are connected by a wiring member 206, for example.
　コンデンサ２０９は、上述のようにコンデンサ本体３０６ａと、当該コンデンサ本体３０６ａの端面である接続部３０６ｃに位置する外部電極と接続された一対の金属端子３０６ｂとを含む。接続部３０６ｃはコンデンサ本体３０６ａと金属端子３０６ｂとの接続部となっている。金属端子３０６ｂにおいて、コンデンサ本体３０６ａと接続された根元部と反対側に位置する先端部が導体パターン３０３ｂ、３０３ｃと接続される接続部となっている。金属端子３０６ｂの先端部である接続部は、導体パターン３０３ｂ、３０３ｃとはんだ付けされている。つまり、金属端子３０６ｂの接続部と導体パターン３０３ｂ、３０３ｃとの間にははんだ接合部３０７が形成されている。また、はんだが濡れ広がってはんだ接合部３０７の形状が不安定にならないように、導体パターン３０３ｂ、３０３ｃ上にはソルダーレジストからなるはんだ規制部３０８が形成されている。はんだ規制部３０８ははんだ付け前に予め導体パターン３０３ｂ、３０３ｃ上に形成されている。 As described above, the capacitor 209 includes the capacitor main body 306a and a pair of metal terminals 306b connected to the external electrodes located at the connection portion 306c which is the end face of the capacitor main body 306a. The connection portion 306c is a connection portion between the capacitor body 306a and the metal terminal 306b. In the metal terminal 306b, a tip portion located on the opposite side to the base portion connected to the capacitor main body 306a is a connection portion connected to the conductor patterns 303b and 303c. The connection part which is the front-end | tip part of the metal terminal 306b is soldered with the conductor patterns 303b and 303c. That is, the solder joint portion 307 is formed between the connection portion of the metal terminal 306b and the conductor patterns 303b and 303c. Further, a solder restricting portion 308 made of a solder resist is formed on the conductor patterns 303b and 303c so that the solder does not spread out and the shape of the solder joint portion 307 does not become unstable. The solder restricting portion 308 is formed on the conductor patterns 303b and 303c in advance before soldering.
　ここで、金属端子付きセラミックコンデンサであるコンデンサ２０９の構成について説明する。コンデンサ２０９は、たとえばジルコン酸カルシウムを主成分とするセラミックコンデンサであるが、チタン酸バリウムを主成分とするセラミックコンデンサであってもよい。コンデンサ２０９は所望の電気特性が得られる材料から構成されていればよい。コンデンサ２０９のサイズは電気的に必要とする特性を有しているものであれば任意に選択できる。たとえば、コンデンサ本体３０６ａのサイズは、縦×横のサイズが３．２ｍｍ×１．６ｍｍ（３２１６サイズ）、３．２ｍｍ×２．５ｍｍ（３２２５サイズ）、４．５ｍｍ×３．２ｍｍ（４５３２サイズ）、５．７ｍｍ×５．０ｍｍ（５７５０サイズ）、といった値を採用できる。また、コンデンサ２０９の高さは電気特性により任意に選択されるが、たとえば当該高さを１．０ｍｍ以上３．５ｍｍ以下とすることができる。金属端子３０６ｂはたとえば銅を主成分とするフレーム材である。金属端子３０６ｂの材料としては導電性を有していれば良く、たとえば一般的なリードフレーム材である４２アロイ（Ｆｅ－Ｎｉ合金）であっても良い。本開示においては、コンデンサ２０９から発熱する熱を放熱する経路として金属端子３０６ｂを利用するため、より熱伝導率が大きいＣｕを主成分とする材質を金属端子３０６ｂの材料とすることが望ましい。また、コンデンサ本体３０６ａと金属端子３０６ｂとの接続部３０６ｃに位置する外部電極は、たとえば錫（Ｓｎ）を主成分とするはんだからなることが望ましい。外部電極の材料としては、金属端子３０６ｂ先端のはんだ接合部３０７を構成するはんだよりも融点が低くない材料であれば良い。 Here, the configuration of the capacitor 209 which is a ceramic capacitor with a metal terminal will be described. Capacitor 209 is a ceramic capacitor mainly composed of calcium zirconate, for example, but may be a ceramic capacitor mainly composed of barium titanate. The capacitor 209 may be made of a material that can obtain desired electrical characteristics. The size of the capacitor 209 can be arbitrarily selected as long as it has electrically required characteristics. For example, the size of the capacitor main body 306a is 3.2 mm × 1.6 mm (3216 size), 3.2 mm × 2.5 mm (3225 size), 4.5 mm × 3.2 mm (4532 size). Values such as 5.7 mm × 5.0 mm (5750 size) can be adopted. Moreover, although the height of the capacitor | condenser 209 is arbitrarily selected by an electrical property, the said height can be 1.0 mm or more and 3.5 mm or less, for example. The metal terminal 306b is a frame material mainly composed of copper, for example. The metal terminal 306b may be made of a conductive material such as 42 alloy (Fe—Ni alloy) which is a general lead frame material. In the present disclosure, since the metal terminal 306b is used as a path for radiating the heat generated from the capacitor 209, it is desirable that the material of the metal terminal 306b is a material mainly composed of Cu having a higher thermal conductivity. In addition, it is desirable that the external electrode located at the connection portion 306c between the capacitor body 306a and the metal terminal 306b is made of, for example, solder containing tin (Sn) as a main component. As a material of the external electrode, any material may be used as long as the melting point is not lower than that of the solder constituting the solder joint 307 at the tip of the metal terminal 306b.
　本実施の形態においては、一つのセラミックコンデンサであるコンデンサ本体３０６ａを金属端子３０６ｂに接続しているが、図１１に示すように、複数のコンデンサ本体３０６ａを多段に積み上げて、１組の金属端子３０６ｂ、３０６ｃによりこれら複数のコンデンサ本体３０６ａを接続することで、一つの部品としてもよい。このようにコンデンサ本体３０６ａを１組の金属端子３０６ｂ、３０６ｃにより並列に接続することで、必要な電気特性を満たしたコンデンサ２０９を構成してもよい。図１１は、本発明の実施の形態２の変形例に係る電力用半導体モジュールのコンデンサの断面を示す模式図である。図１１では、３つのコンデンサ本体３０６ａを積層して１組の金属端子３０６ｂ、３０６ｃにより接続し、１つのコンデンサ２０９としている。なお、積層するコンデンサ本体３０６ａの数は、２でも、４以上でもよく、必要な電気的特性に整合するように適宜選択される。図１１に示す構成では、１組の金属端子３０６ｂ、３０６ｃが本実施の形態に係る中間部材の一例に相当する。 In the present embodiment, the capacitor body 306a, which is one ceramic capacitor, is connected to the metal terminal 306b. However, as shown in FIG. 11, a plurality of capacitor bodies 306a are stacked in multiple stages to form a set of metal terminals. By connecting the plurality of capacitor main bodies 306a by 306b and 306c, a single component may be used. In this way, the capacitor body 306a may be configured by connecting the capacitor main body 306a in parallel by a pair of metal terminals 306b and 306c to satisfy the required electrical characteristics. FIG. 11 is a schematic diagram showing a cross section of a capacitor of a power semiconductor module according to a modification of the second embodiment of the present invention. In FIG. 11, three capacitor bodies 306a are stacked and connected by a set of metal terminals 306b and 306c to form one capacitor 209. The number of capacitor main bodies 306a to be stacked may be two or four or more, and is appropriately selected so as to match the required electrical characteristics. In the configuration shown in FIG. 11, a set of metal terminals 306b and 306c corresponds to an example of an intermediate member according to the present embodiment.
　ここで、実施の形態１で説明したように、図１０に示したような金属端子３０６ｂがなく、図５に示すようにコンデンサ本体５０１ａを導体パターン５０４ａ、５０４ｂに近接して実装する場合、コンデンサ２０９と絶縁層であるセラミック基板５０４ｃとの間に形成される空間２２０（図５参照）は、導体パターン５０４ａ、５０４ｂとソルダーレジスト５０３ｂとのそれぞれの厚さの総和と同等になる。図５に示す構造において、導体パターン５０４ａ、５０４ｂの厚さと幅とは、当該導体パターン５０４ａ、５０４ｂに通電したい電流に応じて設計されるが、当該厚さについては０．２ｍｍ程度とする事が一般的である。また、上述のようにソルダーレジスト５０３ａ、５０３ｂの厚みはたとえば１０μｍ以上３０μｍ以下である。このため、コンデンサ２０９の下部とセラミック基板５０４ｃとの距離は０．２１ｍｍ～０．２３ｍｍ程度となる。粘度が高い封止体２０５を適用する場合、コンデンサ２０９の下部とセラミック基板５０４ｃとの間の空間２２０に、封止体２０５を空隙なく完全に封入する事は困難である。ここで、封止体２０５により封止した後に、セラミック基板５０４ｃとコンデンサ２０９との間に空隙が生じる場合、直径５０μｍ以上の空隙が存在すれば超音波探傷装置（ＳＡＴ：Ｓｃａｎｎｉｎｇ　Ａｃｏｕｓｔｉｃ　Ｔｏｍｏｇｒａｐｈ）により空隙の判別が可能である。そのため、本実施の形態における封止体２０５における空隙は直径５０μｍ以上のものとする。 Here, as described in the first embodiment, there is no metal terminal 306b as shown in FIG. 10, and when the capacitor body 501a is mounted close to the conductor patterns 504a and 504b as shown in FIG. A space 220 (see FIG. 5) formed between 209 and the ceramic substrate 504c, which is an insulating layer, is equivalent to the sum of the thicknesses of the conductor patterns 504a and 504b and the solder resist 503b. In the structure shown in FIG. 5, the thicknesses and widths of the conductor patterns 504a and 504b are designed according to the current to be supplied to the conductor patterns 504a and 504b, but the thickness may be about 0.2 mm. It is common. Further, as described above, the thickness of the solder resists 503a and 503b is, for example, not less than 10 μm and not more than 30 μm. Therefore, the distance between the lower part of the capacitor 209 and the ceramic substrate 504c is about 0.21 mm to 0.23 mm. When the sealing body 205 having a high viscosity is applied, it is difficult to completely encapsulate the sealing body 205 without a gap in the space 220 between the lower portion of the capacitor 209 and the ceramic substrate 504c. Here, in the case where a gap is generated between the ceramic substrate 504c and the capacitor 209 after sealing with the sealing body 205, if a gap having a diameter of 50 μm or more exists, the gap is detected by an ultrasonic flaw detector (SAT: Scanning Acoustic Tomograph). Can be determined. Therefore, the gap in the sealing body 205 in this embodiment is assumed to have a diameter of 50 μm or more.
　ここで、導体パターン５０４ａ、５０４ｂには、Ｐ、Ｎ間の電圧が掛かるため、絶縁距離を十分に確保しておかなければならない。一方、コンデンサ本体５０１ａと導体パターン５０４ａ、５０４ｂとにより形成される挟空間である空間２２０にボイドが発生することで、導体パターン５０４ａ、５０４ｂ間の絶縁が十分に確保出来なくなる可能性がある。このため、当該空間２２０を浸入性の高いアンダーフィル剤で埋めてしまい、絶縁性を確保してもよい。アンダーフィル剤としては、任意の絶縁体を用いることができるが、たとえばエポキシ系の樹脂またはシリコン系の樹脂を用いてもよい。 Here, since a voltage between P and N is applied to the conductor patterns 504a and 504b, a sufficient insulation distance must be secured. On the other hand, if a void is generated in the space 220 that is a sandwiching space formed by the capacitor body 501a and the conductor patterns 504a and 504b, there is a possibility that sufficient insulation between the conductor patterns 504a and 504b cannot be secured. For this reason, the space 220 may be filled with a highly permeable underfill agent to ensure insulation. As the underfill agent, any insulator can be used. For example, an epoxy resin or a silicon resin may be used.
　上述した構成を異なる観点から言えば、上述した電力用半導体モジュールにおいて、導体層としての導体パターンは、第１導体パターンとしての導体パターン５０４ａと、導体パターン５０４ａと間隔を隔てて配置された第２導体パターンとしての導体パターン５０４ｂとを含む。コンデンサ２０９は導体パターン５０４ａと導体パターン５０４ｂとを繋ぐように配置される。電力用半導体モジュールは、コンデンサ２０９と導体パターン５０４ａと導体パターン５０４ｂとに囲まれた空間２２０に配置され、封止体２０５とは異なる材料からなる絶縁体としてのアンダーフィル剤を備える。なお、上述したアンダーフィル剤は、たとえば図１０または図１１に示したコンデンサ２０９のコンデンサ本体３０６ａ下に位置する空間に配置されてもよい。この場合、アンダーフィル剤は、たとえばコンデンサ本体３０６ａ下において導体パターン３０３ｂと導体パターン３０３ｃとの間を分離するように配置されてもよい。 Speaking from a different point of view of the above-described configuration, in the above-described power semiconductor module, the conductor pattern as the conductor layer includes the conductor pattern 504a as the first conductor pattern and the second conductor pattern 504a spaced apart from the conductor pattern 504a. And a conductor pattern 504b as a conductor pattern. The capacitor 209 is arranged so as to connect the conductor pattern 504a and the conductor pattern 504b. The power semiconductor module is disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 504a, and the conductor pattern 504b, and includes an underfill agent as an insulator made of a material different from that of the sealing body 205. Note that the above-described underfill agent may be disposed, for example, in a space located under the capacitor body 306a of the capacitor 209 shown in FIG. 10 or FIG. In this case, the underfill agent may be disposed, for example, so as to separate between the conductor pattern 303b and the conductor pattern 303c under the capacitor main body 306a.
　封止体２０５により封止してコンデンサ２０９と絶縁層としてのセラミック基板５０４ｃとの間に空隙が生じている状態では、通電時に半導体素子２０４およびコンデンサ２０９から繰り返し発生する熱により、コンデンサ２０９に応力が繰り返し発生する。当該応力の値がコンデンサ２０９の破壊強度以上の場合、コンデンサ２０９に応力が集中して当該コンデンサ２０９が割れる。しかし、図１０および図１１に示すような金属端子付きコンデンサをコンデンサ２０９として適用する事により、コンデンサ本体３０６ａと絶縁層３０４との間の空間を広げる事が可能となる。このため、高粘度の封止体２０５を封入するときに、当該空間での空隙の発生を抑制可能となる。コンデンサ本体３０６ａと絶縁層３０４との間の距離が１．０ｍｍ以上確保できれば、上述した封止体２０５での空隙の発生は大幅に抑制される。このように、図１０および図１１に示したような金属端子付きのコンデンサ２０９を適用する事で、封止体２０５の封止時に発生する空隙を抑制出来ると言う効果を得る事が出来る。なお、コンデンサ２０９の下の空間にアンダーフィル剤を配置してもよい。 In a state where a gap is generated between the capacitor 209 and the ceramic substrate 504c as an insulating layer after being sealed by the sealing body 205, stress is applied to the capacitor 209 due to heat repeatedly generated from the semiconductor element 204 and the capacitor 209 when energized. Repeatedly occurs. When the value of the stress is greater than or equal to the breaking strength of the capacitor 209, the stress concentrates on the capacitor 209 and the capacitor 209 is broken. However, by applying a capacitor with a metal terminal as shown in FIGS. 10 and 11 as the capacitor 209, the space between the capacitor body 306a and the insulating layer 304 can be widened. For this reason, when enclosing the highly viscous sealing body 205, generation | occurrence | production of the space | gap in the said space can be suppressed. If the distance between the capacitor main body 306a and the insulating layer 304 can be ensured to be 1.0 mm or more, the generation of the gap in the sealing body 205 described above is significantly suppressed. As described above, by applying the capacitor 209 with metal terminals as shown in FIGS. 10 and 11, it is possible to obtain an effect that the gap generated when the sealing body 205 is sealed can be suppressed. An underfill agent may be disposed in the space below the capacitor 209.
　特に封止体２０５となる樹脂の流動性が悪いと、コンデンサ２０９の下部の空間にだけ、封止体２０５中の樹脂成分だけが選択的に流れ込み、フィラー成分が当該空間に流れ込まない現象が発生する。この場合、コンデンサ２０９の下部の空間では、フィラー成分が不足することに起因して、局所的に封止体２０５の熱伝導率が低くなり封止体２０５の線膨張係数が大きくなる。この結果、封止後にコンデンサ２０９が割れるという不良が発生することがあった。コンデンサ２０９として上記のように金属端子付きセラミックコンデンサを用いることで、上記のように封止体２０５となるべき樹脂の流動性が低いことに起因する空隙の発生を抑制する、という今までにない効果を得る事ができた。なお、封止体２０５となるエポキシ樹脂の粘度はより小さい方が望ましいが、フィラーの種類およびフィラーの含有量により当該粘度は異なる。そのため、たとえば封止体２０５となる樹脂の粘度は、１０Ｐａ・ｓ以上１００Ｐａ・ｓ以下、といった範囲である事が好ましい。 In particular, if the resin used as the sealing body 205 has poor fluidity, only the resin component in the sealing body 205 selectively flows into the space below the capacitor 209, and the filler component does not flow into the space. To do. In this case, in the space below the capacitor 209, due to the lack of the filler component, the thermal conductivity of the sealing body 205 is locally reduced and the linear expansion coefficient of the sealing body 205 is increased. As a result, a defect that the capacitor 209 breaks after sealing may occur. By using a ceramic capacitor with a metal terminal as the capacitor 209 as described above, it has never been possible to suppress the generation of voids due to the low fluidity of the resin to be the sealing body 205 as described above. I was able to get an effect. Note that the viscosity of the epoxy resin used as the sealing body 205 is desirably smaller, but the viscosity varies depending on the type of filler and the content of the filler. Therefore, for example, the viscosity of the resin to be the sealing body 205 is preferably in the range of 10 Pa · s to 100 Pa · s.
　図１０および図１１に示すような金属端子付きセラミックコンデンサをコンデンサ２０９として電力用半導体モジュールに内蔵する事で、コンデンサ２０９のはんだ付け時およびＣｕからなるベース部材３０５の反り変形により発生する応力を、金属端子３０６ｂにより緩和できる。このため、コンデンサ２０９の割れを抑制するだけでなく、金属端子３０６ｂの先端側に位置するはんだ接合部３０７に発生する応力を緩和すると言う効果が得られる。さらに、通電時に半導体素子２０４およびコンデンサ２０９から発生する熱を、金属端子３０６ｂを伝熱経路として、効率的にベース部材３０５に伝える事が可能になると言う従来には無かった効果が得られる。更に、封止体２０５としてエポキシ樹脂を用いて封止する事で、コンデンサ２０９として金属端子付きセラミックコンデンサを用いる事により得られる上記効果をより顕著なものにできる。 By incorporating a ceramic capacitor with a metal terminal as shown in FIG. 10 and FIG. 11 in a power semiconductor module as a capacitor 209, stress generated by solder deformation of the capacitor 209 and warping deformation of the base member 305 made of Cu, It can be mitigated by the metal terminal 306b. For this reason, the effect of not only suppressing the crack of the capacitor 209 but also relaxing the stress generated in the solder joint portion 307 located on the front end side of the metal terminal 306b is obtained. Furthermore, an effect that has not been achieved in the past can be obtained that heat generated from the semiconductor element 204 and the capacitor 209 during energization can be efficiently transmitted to the base member 305 using the metal terminal 306b as a heat transfer path. Furthermore, by sealing with an epoxy resin as the sealing body 205, the above-mentioned effect obtained by using a ceramic capacitor with a metal terminal as the capacitor 209 can be made more remarkable.
　また、図１０に示すように、金属端子付きのコンデンサ２０９の高さＨ１について、当該高さＨ１が高くなるほど金属端子３０６ｂによる配線インダクタンスが大きくなる。そのため、図１０に示すように、配線部材２０６のループ高さＨ２より当該高さＨ１は低い事が好ましい。 Further, as shown in FIG. 10, regarding the height H1 of the capacitor 209 with a metal terminal, the wiring inductance due to the metal terminal 306b increases as the height H1 increases. Therefore, as shown in FIG. 10, the height H1 is preferably lower than the loop height H2 of the wiring member 206.
　＜作用効果＞
　上記電力用半導体モジュールにおいて、コンデンサ２０９は、コンデンサ本体３０６ａと、コンデンサ本体３０６ａに接続された金属端子３０６ｂとを含む。金属端子３０６ｂは導体層としての導体パターン３０３ｂ、３０３ｃに接続さている。 <Effect>
In the power semiconductor module, the capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to the capacitor body 306a. The metal terminal 306b is connected to conductor patterns 303b and 303c as conductor layers.
　このようにすれば、コンデンサ２０９を導体パターン３０３ｂ、３０３ｃに接続するときにはんだ付けなどを実施する際に、当該はんだ付けに伴って発生する熱応力を金属端子３０６ｂで吸収することで、コンデンサ本体３０６ａが当該応力により破損するといった問題の発生を抑制できる。さらに、スナバ回路を構成するコンデンサ２０９が導体パターン３０３ａと同一レイヤにより構成される導体パターン３０３ｂ、３０３ｃに接続されているので、ベース部材３０５とは別の基板を、スナバ回路用に新たに準備する場合より電力用半導体モジュールの構成を簡略化できるとともに、当該導体パターン３０３ｂ、３０３ｃとコンデンサ２０９との接合部の実装が容易なため当該接合部を信頼性高く形成することができる。このため、スナバ回路によりリンギングを抑制できるとともに、コンデンサ２０９と導体パターン３０３ｂ、３０３ｃとの接合部の不良などに起因する問題の発生を抑制できる。 In this way, when the soldering or the like is performed when the capacitor 209 is connected to the conductor patterns 303b and 303c, the thermal stress generated by the soldering is absorbed by the metal terminal 306b. Generation | occurrence | production of the problem that 306a breaks with the said stress can be suppressed. Furthermore, since the capacitor 209 constituting the snubber circuit is connected to the conductor patterns 303b and 303c constituted by the same layer as the conductor pattern 303a, a substrate different from the base member 305 is newly prepared for the snubber circuit. The configuration of the power semiconductor module can be simplified as compared with the case, and since the junction portion between the conductor patterns 303b and 303c and the capacitor 209 can be easily mounted, the junction portion can be formed with high reliability. For this reason, ringing can be suppressed by the snubber circuit, and occurrence of problems due to defects in the joint portion between the capacitor 209 and the conductor patterns 303b and 303c can be suppressed.
　上記電力用半導体モジュールは、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子のいずれか、すなわち半導体素子２０４に接続された配線部材２０６を備える。図１０に示すように、導体パターン３０３ｂ、３０３ｃから配線部材２０６の頂部までの高さＨ２より、導体パターン３０３ｂ、３０３ｃからコンデンサ２０９の頂部までの高さＨ１が低い。 The power semiconductor module includes a wiring member 206 connected to any one of at least one positive power semiconductor element and at least one negative power semiconductor element, that is, the semiconductor element 204. As shown in FIG. 10, the height H1 from the conductor patterns 303b and 303c to the top of the capacitor 209 is lower than the height H2 from the conductor patterns 303b and 303c to the top of the wiring member 206.
　この場合、コンデンサ本体３０６ａと導体パターン３０３ｂ、３０３ｃとを接続する金属端子３０６ｂの長さが長くなるほど金属端子３０６ｂによるインダクタンスが大きくなるため、コンデンサ２０９の頂部までの高さＨ１を配線部材２０６の頂部までの高さＨ２より低くしておくことで、金属端子３０６ｂの長さが長くなりすぎることを防止できる。この結果、金属端子３０６ｂによるインダクタンスの増大を抑制でき、電力用半導体モジュール全体の配線インダクタンスの増加を抑制できる。このため、リンギング発生時のサージ電圧を抑制できる。 In this case, since the inductance of the metal terminal 306b increases as the length of the metal terminal 306b connecting the capacitor body 306a and the conductor patterns 303b and 303c increases, the height H1 to the top of the capacitor 209 is set to the top of the wiring member 206. By making the height H2 lower than the height H2, it is possible to prevent the metal terminal 306b from becoming too long. As a result, an increase in inductance due to the metal terminal 306b can be suppressed, and an increase in wiring inductance of the entire power semiconductor module can be suppressed. For this reason, the surge voltage when ringing occurs can be suppressed.
　実施の形態３．
　図１２は、本発明の実施の形態３に係る電力用半導体モジュールの断面を示す模式図である。図１３は、図１２に示した本発明の実施の形態３に係る電力用半導体モジュールの部分断面を示す模式図である。図１２に示した電力用半導体モジュールは基本的には図８に示した電力用半導体モジュールと同様の構成を備えるが、図１２に示すように、スナバ回路を形成する金属端子付きセラミックコンデンサであるコンデンサ２０９と、抵抗器２１０とを半導体素子２０４と同一レイヤではなく、スナバ回路用基板２３０に搭載している点、およびスナバ回路用基板２３０を電力用半導体モジュールの上側の導体パターン２０３ｊにはんだ２３１により接合している点が異なる。以下、図１２および図１３を用いて説明する。 Embodiment 3 FIG.
FIG. 12 is a schematic diagram showing a cross section of the power semiconductor module according to the third embodiment of the present invention. FIG. 13 is a schematic diagram showing a partial cross section of the power semiconductor module according to Embodiment 3 of the present invention shown in FIG. The power semiconductor module shown in FIG. 12 basically has the same configuration as that of the power semiconductor module shown in FIG. 8, but is a ceramic capacitor with metal terminals that forms a snubber circuit as shown in FIG. The capacitor 209 and the resistor 210 are not on the same layer as the semiconductor element 204, but are mounted on the snubber circuit board 230, and the snubber circuit board 230 is soldered to the conductor pattern 203j on the upper side of the power semiconductor module. The point of joining is different. Hereinafter, description will be made with reference to FIGS. 12 and 13.
　図１３は電力用半導体モジュールのスナバ回路を形成する金属端子付のコンデンサ２０９と抵抗器２１０との周囲を拡大した部分断面図である。図１２および図１３に示す電力用半導体モジュールでは、コンデンサ２０９および抵抗体２１０がスナバ回路用基板２３０に搭載されている。 FIG. 13 is an enlarged partial cross-sectional view of the periphery of the capacitor 209 with a metal terminal and the resistor 210 forming the snubber circuit of the power semiconductor module. In the power semiconductor module shown in FIGS. 12 and 13, a capacitor 209 and a resistor 210 are mounted on a snubber circuit substrate 230.
　スナバ回路用基板２３０は、絶縁基板であるセラミック基板２３０ａと、当該セラミック基板２３０ａの表面上に配置された導体パターン２３０ｃ、２３０ｄ、２３０ｅと、セラミック基板２３０ａの裏面側に配置された導体パターン２３０ｂとを含む。導体パターン２３０ｃ、２３０ｄ、２３０ｅは、互いに間隔を隔ててセラミック基板２３０ａの表面上に配置されている。導体パターン２３０ｃ、２３０ｄ、２３０ｅの配置は任意に決定できるが、たとえばこれらは互いにほぼ平行に延びるように配置されていてもよい。セラミック基板２３０ａの裏面上に配置された導体パターン２３０ｂははんだ２３１により絶縁材２０３ｂ上の導体パターン２０３ｊに接続されている。図１２および図１３に示した構成では、スナバ回路用基板２３０が本実施の形態に係る中間部材の一例に相当する。また、コンデンサ２０９が本実施の形態に係るコンデンサの一例に相当する。また、はんだ２３１が本実施の形態に係る接合材の一例に相当する。なお、スナバ回路用基板２３０において、セラミック基板２３０ａに代えて他の絶縁材料からなる基板を絶縁基板として用いてもよい。たとえば、セラミック基板２３０ａに代えて樹脂製の基板を用いてもよい。 The snubber circuit substrate 230 includes a ceramic substrate 230a which is an insulating substrate, conductor patterns 230c, 230d and 230e disposed on the surface of the ceramic substrate 230a, and a conductor pattern 230b disposed on the back side of the ceramic substrate 230a. including. The conductor patterns 230c, 230d, and 230e are disposed on the surface of the ceramic substrate 230a at a distance from each other. The arrangement of the conductor patterns 230c, 230d, and 230e can be arbitrarily determined. For example, they may be arranged so as to extend substantially parallel to each other. The conductor pattern 230b disposed on the back surface of the ceramic substrate 230a is connected to the conductor pattern 203j on the insulating material 203b by solder 231. In the configuration shown in FIGS. 12 and 13, the snubber circuit board 230 corresponds to an example of the intermediate member according to the present embodiment. Capacitor 209 corresponds to an example of a capacitor according to this embodiment. The solder 231 corresponds to an example of the bonding material according to the present embodiment. In the snubber circuit substrate 230, a substrate made of another insulating material may be used as the insulating substrate instead of the ceramic substrate 230a. For example, a resin substrate may be used instead of the ceramic substrate 230a.
　コンデンサ２０９はコンデンサ本体部３０６ａと金属端子３０６ｂとを含む。コンデンサ２０９は導体パターン２３０ｃと導体パターン２３０ｄとを接続する。抵抗体２１０は導体パターン２３０ｄと導体パターン２３０ｅとを接続する。コンデンサ２０９と抵抗体２１０とは直列に接続されている。導体パターン２３０ｅは配線部材２０６により半導体素子２０４などと接続されている。実施の形態２と同様に、コンデンサ２０９として上記のように金属端子付きセラミックコンデンサを用いることで、封止体２０５となるべき樹脂の流動性が低いことに起因する空隙の発生を抑制する、という今までにない効果を得る事ができる。 The capacitor 209 includes a capacitor main body 306a and a metal terminal 306b. The capacitor 209 connects the conductor pattern 230c and the conductor pattern 230d. The resistor 210 connects the conductor pattern 230d and the conductor pattern 230e. The capacitor 209 and the resistor 210 are connected in series. The conductor pattern 230e is connected to the semiconductor element 204 and the like by the wiring member 206. Similarly to the second embodiment, the use of the ceramic capacitor with metal terminals as the capacitor 209 as described above suppresses the generation of voids due to the low fluidity of the resin to be the sealing body 205. You can get an unprecedented effect.
　スナバ回路用基板２３０の上側の導体パターン２３０ｃ、２３０ｄ、２３０ｅには、金属端子付きのコンデンサ２０９と抵抗体２１０とが直列に接続されている。導体パターン２３０ｃは、少なくとも一つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐ、および少なくとも一つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎのいずれか一方である半導体素子２０４が接続されている。 A capacitor 209 with a metal terminal and a resistor 210 are connected in series to the conductor patterns 230c, 230d, and 230e on the upper side of the snubber circuit board 230. The conductor pattern 230c includes at least one positive-side power semiconductor element 103P and positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and negative-side reflux diode. A semiconductor element 204 which is one of 104N is connected.
　具体的には、セラミック基板２３０ａは任意の絶縁材料からなる基板であるが、たとえば、アルミナ（ＡＬ２Ｏ３）や窒化アルミニウム（ＡｌＮ）や窒化けい素（ＳｉＮ）などからなる基板である。抵抗体２１０は、セラミック基板２３０ａの表面に、抵抗体２１０になる酸化ルテニウム（Ｒｕ２Ｏ）などのペースト材を印刷法などを用いて配置して形成する。また、抵抗体２１０になるペースト材を印刷する手法と同様に、Ａｇペースト材を印刷法などによりセラミック基板２３０ａの表面および裏面に配置してもよい。このように配置されたＡｇペースト材を焼成することにより、上側の導体パターン２３０ｃ、２３０ｄ、２３０ｅおよび下側の導体パターン２３０ｂを得ることができる。 Specifically, the ceramic substrate 230a is a substrate made of an arbitrary insulating material. For example, the ceramic substrate 230a is a substrate made of alumina (AL 2 O 3 ), aluminum nitride (AlN), silicon nitride (SiN), or the like. The resistor 210 is formed by disposing a paste material such as ruthenium oxide (Ru 2 O) to be the resistor 210 on the surface of the ceramic substrate 230a using a printing method or the like. Further, similarly to the method of printing the paste material that becomes the resistor 210, the Ag paste material may be disposed on the front surface and the back surface of the ceramic substrate 230a by a printing method or the like. By firing the Ag paste material arranged in this way, the upper conductor patterns 230c, 230d, 230e and the lower conductor pattern 230b can be obtained.
　このようにして得られたスナバ回路用基板２３０に、電力用半導体モジュールの製造工程とは異なる工程においてコンデンサ２０９をはんだ付けにより実装することで、スナバ回路基板が得られる。さらに、電力用半導体モジュールの半導体素子２０４を導体パターン２０３ａにはんだ付けする工程において、コンデンサ２０９が実装されたスナバ回路基板を同時に導体パターン２０３ｊに接続する。さらに、スナバ回路基板および半導体素子２０４が実装されたベース絶縁基板２０３に配線部材２０６、ケース２０２などを接続し、半導体素子２０４などを覆うように封止体２０５を形成することで、図１２に示す電力用半導体モジュールが得られる。 The snubber circuit board can be obtained by mounting the capacitor 209 on the snubber circuit board 230 thus obtained by soldering in a process different from the manufacturing process of the power semiconductor module. Further, in the step of soldering the semiconductor element 204 of the power semiconductor module to the conductor pattern 203a, the snubber circuit board on which the capacitor 209 is mounted is simultaneously connected to the conductor pattern 203j. Further, the wiring member 206, the case 202, and the like are connected to the base insulating substrate 203 on which the snubber circuit board and the semiconductor element 204 are mounted, and the sealing body 205 is formed so as to cover the semiconductor element 204 and the like. The power semiconductor module shown is obtained.
　上述した電力用半導体モジュールの製造方法の特徴的な構成を要約すれば、上記電力用半導体モジュールの製造方法は、コンデンサとしてのコンデンサ本体３０６ａと抵抗体２１０とが直列に接続された回路であるスナバ回路を備える電力用半導体モジュールの製造方法であって、スナバ回路が形成される中間部材にコンデンサを接続する工程を備える。当該中間部材は、表面を有する絶縁基板の一例としてのセラミック基板２３０ａと、当該セラミック基板２３０ａの表面に形成されたスナバ回路用導体パターンである導体パターン２３０ｂ、２３０ｃ、２３０ｄ、２３０ｅとを含む。上記接続する工程では、コンデンサ本体３０６ａ金属端子３０６ｂを介して導体パターン２３０ｃ、２０３ｄに接続される。上記電力用半導体モジュールの製造方法は、さらに、コンデンサ本体部３０６ａが導電体パターン２３０ｃ、２０３ｄに接続されたセラミック基板２３０ａを、表面を有するベース絶縁基板２０３に設置する工程を備える。ベース絶縁基板２０３の表面上には、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子である半導体素子２０４と、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子である半導体素子２０４のいずれか一方が接続される導体パターン２０３ａ、２０３ｈ、２０３ｊと、が配置される。ベース絶縁基板２０３に設置する工程では、セラミック基板２３０がベース絶縁基板２０３の導体パターン２０３ｊに接続される。その後、ケース２０２や配線部材２０６の設置、封止体２０５の形成などの工程を実施することで、図１２に示すようなスナバ回路を内蔵した電力用半導体モジュールが得られる。 To summarize the characteristic configuration of the method for manufacturing a power semiconductor module described above, the method for manufacturing a power semiconductor module is a snubber that is a circuit in which a capacitor body 306a as a capacitor and a resistor 210 are connected in series. A method of manufacturing a power semiconductor module including a circuit, comprising a step of connecting a capacitor to an intermediate member on which a snubber circuit is formed. The intermediate member includes a ceramic substrate 230a as an example of an insulating substrate having a surface, and conductor patterns 230b, 230c, 230d, and 230e that are conductor patterns for a snubber circuit formed on the surface of the ceramic substrate 230a. In the connecting step, the conductor patterns 230c and 203d are connected via the capacitor body 306a and the metal terminal 306b. The method for manufacturing a power semiconductor module further includes a step of placing a ceramic substrate 230a in which a capacitor body 306a is connected to conductor patterns 230c and 203d on a base insulating substrate 203 having a surface. On the surface of the base insulating substrate 203, at least one positive power semiconductor element and at least one negative power semiconductor element 204, at least one positive power semiconductor element and at least one negative power element Conductor patterns 203a, 203h, and 203j to which any one of the semiconductor elements 204 as the side power semiconductor elements is connected are arranged. In the step of installing on the base insulating substrate 203, the ceramic substrate 230 is connected to the conductor pattern 203 j of the base insulating substrate 203. After that, by performing steps such as installation of the case 202 and the wiring member 206 and formation of the sealing body 205, a power semiconductor module incorporating a snubber circuit as shown in FIG. 12 is obtained.
　また、製品開発において、構成の異なる複数種類の電力用半導体モジュールに対して、スナバ回路用基板２３０をそのまま流用する事が可能となる。したがって、電力用半導体素子２０４の配置や配線部材２０６のレイアウトを変更する場合において、スナバ回路を新たに設計し直す必要がなく、電力用半導体モジュールの設計に要する工数およびコストを低減できる。 In product development, the snubber circuit board 230 can be used as it is for a plurality of types of power semiconductor modules having different configurations. Therefore, when the arrangement of the power semiconductor element 204 and the layout of the wiring member 206 are changed, it is not necessary to redesign the snubber circuit, and the man-hour and cost required for designing the power semiconductor module can be reduced.
　図１４は、本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。図１４に示したスナバ回路用基板２３０を備える電力用半導体モジュールは、基本的には図１２および図１３に示した電力用半導体モジュールと同様の構成を備えるが、スナバ回路用基板２３０の構成が図１２および図１３に示した電力用半導体モジュールと異なっている。すなわち、図１４に示した電力用半導体モジュールでは、スナバ回路用基板２３０において導体パターン２３０ｅから下側の導体パターン２３０ｂに向かってセラミック基板２３０ａを貫通するスルーホール２３２が形成されている。当該スルーホール２３２もしくは当該スルーホール２３２内が導電体で充填されたヴィアにより、導体パターン２３０ｅと導体パターン２３０ｂが接続されている。スナバ回路用基板２３０と電力用半導体モジュールの上側の導体パターン２０３ｊとは、はんだ２３１により接続されている。導体パターン２０３ｊには配線部材２０６を通じて電力用半導体モジュールの上側の導体パターン２０３ａ（図１２参照）へと接続されている。 FIG. 14 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention. The power semiconductor module including the snubber circuit board 230 shown in FIG. 14 has basically the same configuration as the power semiconductor module shown in FIGS. 12 and 13, but the configuration of the snubber circuit board 230 is the same. This is different from the power semiconductor module shown in FIGS. That is, in the power semiconductor module shown in FIG. 14, in the snubber circuit substrate 230, a through hole 232 that penetrates the ceramic substrate 230a from the conductor pattern 230e toward the lower conductor pattern 230b is formed. The conductor pattern 230e and the conductor pattern 230b are connected by the through hole 232 or a via filled in the through hole 232 with a conductor. The snubber circuit board 230 and the upper conductor pattern 203j of the power semiconductor module are connected by solder 231. The conductor pattern 203j is connected to the conductor pattern 203a (see FIG. 12) on the upper side of the power semiconductor module through the wiring member 206.
　図１４に示した電力用半導体モジュールでは、図１２および図１３に示した電力用半導体モジュールと同様の効果を得ることができる。さらに、図１４に示した電力用半導体モジュールでは、スルーホール２３２を設ける事で、スナバ回路用基板２３０の上側の導体パターン２３０ｅ上に配線部材２０６を接合するための面積を確保する必要がない。そのため、導体パターン２３０ｅの面積を削減する事が可能となり、スナバ回路用基板２３０を小型化できる。また、スルーホール２３２を抵抗体２１０の近傍に設置することで、スナバ回路に電流が流された際の発熱を電力用半導体モジュールのベース絶縁基板２０３方向に効率的に放熱する事ができる。 The power semiconductor module shown in FIG. 14 can obtain the same effects as those of the power semiconductor module shown in FIG. 12 and FIG. Further, in the power semiconductor module shown in FIG. 14, by providing the through hole 232, it is not necessary to secure an area for joining the wiring member 206 on the conductor pattern 230 e on the upper side of the snubber circuit substrate 230. Therefore, the area of the conductor pattern 230e can be reduced, and the snubber circuit board 230 can be reduced in size. Further, by installing the through hole 232 in the vicinity of the resistor 210, it is possible to efficiently dissipate heat generated when a current flows through the snubber circuit in the direction of the base insulating substrate 203 of the power semiconductor module.
　図１５は、本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。図１５は、図１３に対応している。図１５に開示された電力用半導体モジュールは、基本的には図１３に開示された電力用半導体モジュールと同様の構成を備えるが、図１３に開示された金属端子付きのコンデンサ２０９ではなく、金属端子が設置されていないセラミックコンデンサであるコンデンサ２０９を備える点が図１３に示した電力用半導体モジュールと異なっている。セラミックコンデンサと線膨張係数が近いセラミック基板２３０ａ上にコンデンサ２０９を実装することで、コンデンサ２０９のはんだ接合部２１１に生じる応力が少なくなる。このため、コンデンサ２０９の接合信頼性を向上することが可能となる。したがって、図１３に示すようにコンデンサ２０９に金属端子３０６ｂを設置しなくても、電力半導体モジュールに求められる信頼性を確保する事ができる。なお、本実施の形態では絶縁体であるセラミックを支持体とするセラミック基板２３０ａについて記載したが、プリント基板のような樹脂を支持体とした回路基板にスナバ回路を形成した構造であっても、エポキシ樹脂などによる封止体２０５により封止している事で、プリント基板のはんだ接合部２１１に発生する応力を小さく出来る。そのため、このような構成によっても電力用半導体モジュールに求められる信頼性を確保する事が可能である。 FIG. 15 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention. FIG. 15 corresponds to FIG. The power semiconductor module disclosed in FIG. 15 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 13, but is not a capacitor 209 with metal terminals disclosed in FIG. The power semiconductor module shown in FIG. 13 is different from the power semiconductor module shown in FIG. 13 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided. By mounting the capacitor 209 on the ceramic substrate 230a having a linear expansion coefficient close to that of the ceramic capacitor, the stress generated in the solder joint portion 211 of the capacitor 209 is reduced. For this reason, it becomes possible to improve the joining reliability of the capacitor 209. Therefore, the reliability required for the power semiconductor module can be ensured without installing the metal terminal 306b on the capacitor 209 as shown in FIG. In this embodiment, the ceramic substrate 230a having a ceramic support as an insulator is described. However, even if the snubber circuit is formed on a circuit board having a resin support such as a printed circuit board, By sealing with the sealing body 205 by an epoxy resin etc., the stress which generate | occur | produces in the solder joint part 211 of a printed circuit board can be made small. Therefore, even with such a configuration, it is possible to ensure the reliability required for the power semiconductor module.
　図１６は、本発明の実施の形態３の変形例に係る電力用半導体モジュールの部分断面を示す模式図である。図１６は、図１４に対応している。図１６に開示された電力用半導体モジュールは、基本的には図１４に開示された電力用半導体モジュールと同様の構成を備えるが、図１４に開示された金属端子付きのコンデンサ２０９ではなく、金属端子が設置されていないセラミックコンデンサであるコンデンサ２０９を備える点が図１４に示した電力用半導体モジュールと異なっている。このような構成によっても、図１４に開示された電力用半導体モジュールと同様の効果を得ることができる。さらに、図１５に示した電力用半導体モジュールと同様の効果も得られる。すなわち、セラミックコンデンサと線膨張係数が近いセラミック基板２３０ａ上にコンデンサ２０９を実装することで、コンデンサ２０９のはんだ接合部２１１に生じる応力が少なくなる。このため、コンデンサ２０９の接合信頼性を向上することが可能となる。 FIG. 16 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention. FIG. 16 corresponds to FIG. The power semiconductor module disclosed in FIG. 16 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 14, but is not a capacitor 209 with metal terminals disclosed in FIG. The power semiconductor module shown in FIG. 14 is different from the power semiconductor module shown in FIG. 14 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided. Even with such a configuration, the same effect as that of the power semiconductor module disclosed in FIG. 14 can be obtained. Further, the same effect as that of the power semiconductor module shown in FIG. 15 can be obtained. That is, by mounting the capacitor 209 on the ceramic substrate 230a having a linear expansion coefficient close to that of the ceramic capacitor, the stress generated in the solder joint portion 211 of the capacitor 209 is reduced. For this reason, it becomes possible to improve the joining reliability of the capacitor 209.
　なお、上述した図１２～図１６に示した電力用半導体モジュールにおいて、上述した実施の形態１または実施の形態２において説明した特徴を追加してもよい。たとえば、図１２～図１４に示した電力用半導体モジュールにて、コンデンサ本体３０６ｂ下に位置する領域であって導体パターン２３０ｃ、２３０ｄの表面に、図１１に示したようなはんだ規制部３０８を形成してもよい。絶縁体としてのはんだ規制部３０８は、封止体２０５とは異なる材料により構成されてもよい。また、図１５および図１６に示した電力用半導体モジュールにて、コンデンサ２０９下に位置する領域であって導体パターン２３０ｃ、２３０ｄの表面に、図５に示しソルダーレジスト５０３ｂを形成してもよい。絶縁体としてのソルダーレジスト５０３ｂに代えて、他の絶縁体を当該位置に配置してもよい。 In the power semiconductor module shown in FIGS. 12 to 16, the features described in the first embodiment or the second embodiment may be added. For example, in the power semiconductor module shown in FIGS. 12 to 14, the solder restricting portion 308 as shown in FIG. 11 is formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor body 306b. May be. The solder restricting portion 308 as an insulator may be made of a material different from that of the sealing body 205. Further, in the power semiconductor module shown in FIGS. 15 and 16, the solder resist 503b shown in FIG. 5 may be formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor 209. Instead of the solder resist 503b as an insulator, another insulator may be disposed at the position.
　実施の形態４．
　図１７は、本発明の実施の形態４に係る電力用半導体モジュールのコンデンサの部分断面および接続部の上面を示す模式図である。図１７に示した電力用半導体モジュールは、基本的には実施の形態２に係る電力用半導体モジュールと同様の構成を備えるが、図１７に示すようにコンデンサ２０９の金属端子３０６ｂにおいて導体パターン４０４と接続される接続部４０１ｃの構成が異なっている。以下、説明する。なお、図１７の上側の図はコンデンサおよび接続部の部分断面を示し、下側の図は接続部の上面図を示す。 Embodiment 4 FIG.
FIG. 17 is a schematic diagram showing a partial cross section of a capacitor and an upper surface of a connection portion of a power semiconductor module according to Embodiment 4 of the present invention. The power semiconductor module shown in FIG. 17 basically has the same configuration as that of the power semiconductor module according to the second embodiment. However, as shown in FIG. 17, the conductor pattern 404 is connected to the metal terminal 306b of the capacitor 209. The configuration of the connecting portion 401c to be connected is different. This will be described below. Note that the upper diagram in FIG. 17 shows a partial cross section of the capacitor and the connection portion, and the lower diagram shows a top view of the connection portion.
　図１７に示すように、金属端子付きセラミックコンデンサであるコンデンサ２０９（図２参照）は、コンデンサ本体３０６ａと、金属端子３０６ｂとを主に含む。金属端子３０６ｂの先端には、導体パターン４０４との接続部４０１ｃが形成されている。金属端子３０６ｂは、接続部４０１ｃに連なりコンデンサ本体３０６ａに接続される本体側部４０１ｂを有する。本体側部４０１ｂの延在する方向に対して、接続部４０１ｃの延在する方向は交差している。本体側部４０１ｂと接続部４０１ｃの交差する角度は好ましくは８０°以上１００°以下であり、８５°以上９５°以下でもよく、９０°でもよい。 As shown in FIG. 17, a capacitor 209 (see FIG. 2), which is a ceramic capacitor with a metal terminal, mainly includes a capacitor body 306a and a metal terminal 306b. A connection portion 401c with the conductor pattern 404 is formed at the tip of the metal terminal 306b. The metal terminal 306b has a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a. The direction in which the connecting portion 401c extends intersects the direction in which the main body side portion 401b extends. The angle at which the main body side portion 401b and the connecting portion 401c intersect is preferably 80 ° to 100 °, may be 85 ° to 95 °, and may be 90 °.
　接続部４０１ｃには、はんだ接合部４０２のはんだ厚Ｔ１を確保するために凸部４０１ｄが設けられている。凸部４０１ｄは、図１７に示すように、たとえば接続部４０１ｃの一部を凸状に塑性変形させた部分である。凸部４０１ｄは、接続部４０１ｃの表面に導電体または絶縁体など任意の材料を凸状に配置して形成してもよい。なお、はんだ接合部４０２の形状を安定化するため、導体パターン４０４の表面上にはソルダーレジスト４０３が印刷されている。複数のソルダーレジスト４０３は、はんだ接合部４０２の外周を規定するため、接続部４０１ｃが配置された領域を挟むように配置されている。 The connecting portion 401c is provided with a convex portion 401d in order to ensure the solder thickness T1 of the solder joint portion 402. As shown in FIG. 17, the convex portion 401d is, for example, a portion obtained by plastic deformation of a part of the connecting portion 401c into a convex shape. The convex portion 401d may be formed by arranging an arbitrary material such as a conductor or an insulator in a convex shape on the surface of the connection portion 401c. Note that a solder resist 403 is printed on the surface of the conductor pattern 404 in order to stabilize the shape of the solder joint portion 402. The plurality of solder resists 403 are disposed so as to sandwich the region where the connection portion 401 c is disposed in order to define the outer periphery of the solder joint portion 402.
　金属端子３０６ｂの接続部４０１ｃにおける凸部４０１ｄは、コンデンサ本体３０６ａに金属端子３０６ｂを接続する前であって、金属端子３０６ｂがリードフレーム状態においてプレスにより形成してもよい。 The convex portion 401d of the connecting portion 401c of the metal terminal 306b may be formed by pressing the metal terminal 306b in a lead frame state before connecting the metal terminal 306b to the capacitor body 306a.
　図１８～図２３は、本発明の実施の形態４の変形例に係る電力用半導体モジュールのコンデンサの接続部の上面を示す模式図であって、接続部４０１ｃの構成の変形例を示している。図１８に示すように、凸部４０１ｄは金属端子３０６ｂの接続部４０１ｃにおいて中央からずれた位置に配置されていてもよい。また、図１９に示すように、接続部４０１ｃに複数の凸部４０１ｄ、たとえば２つの凸部４０１ｄを配置してもよい。あるいは、図２０に示すように、接続部４０１ｃに３つの凸部４０１ｄを配置してもよい。接続部４０１ｄに配置される凸部４０１ｄの数は、４つ以上でもよい。このように複数の凸部４０１ｄを設けている方が、コンデンサ２０９の導体パターン４０４に対する傾きの発生を確実に抑制できる。凸部４０１ｄの高さは、はんだ接合部４０２の接合信頼性が十分に確保出来る厚さＴ１が確保出来れば良く、たとえば当該凸部４０１ｄの高さ（厚さＴ１）を５０μｍ以上３００μｍ以下とすることができる。 18 to 23 are schematic views showing the top surface of the capacitor connecting portion of the power semiconductor module according to the modification of the fourth embodiment of the present invention, and show a modification of the configuration of the connecting portion 401c. . As shown in FIG. 18, the convex portion 401d may be arranged at a position shifted from the center in the connection portion 401c of the metal terminal 306b. In addition, as shown in FIG. 19, a plurality of convex portions 401d, for example, two convex portions 401d may be arranged on the connecting portion 401c. Or as shown in FIG. 20, you may arrange | position three convex parts 401d in the connection part 401c. The number of convex portions 401d arranged in the connecting portion 401d may be four or more. Thus, the direction which provided the some convex part 401d can suppress generation | occurrence | production of the inclination with respect to the conductor pattern 404 of the capacitor | condenser 209 reliably. The height of the convex portion 401d only needs to secure a thickness T1 that can sufficiently secure the bonding reliability of the solder joint portion 402. For example, the height (thickness T1) of the convex portion 401d is set to 50 μm or more and 300 μm or less. be able to.
　また、図１７に示した凸部４０１ｄは、接続部４０１ｃを突起状に塑性変形させて形成されていたが、図２１に示すように、凸部４０１ｄの先端部に貫通孔が形成されていてもよい。図２１に示した接続部４０１ｃの凸部４０１ｄは、たとえば接続部４０１ｃに対するプレス加工時に凸部４０１ｄとなるべき部分の一部を打ち抜いて貫通孔を形成している。このとき、当該プレス加工時の打抜き方向を、金属端子３０６ｂにおいてコンデンサ本体３０６ａが接続される搭載面側から、導体パターン４０４に接する面側に向かう方向としてもよい。このようにすれば、打抜き時の返しが導体パターン４０４に接する面側に生じることで、当該返しが凸部４０１ｄとなる。この際に打抜き時の返しの高さは同様に３０μｍ以上３００μｍ以下としてもよい。また、貫通孔の数も一つ以上であれば良く、当該貫通孔が形成された凸部４０１ｄを複数個設けてある事が望ましい。この場合、貫通孔にはんだが濡れ広がる事で、金属端子３０６ｂとはんだとの接合面積が従来に比較して増加する。この結果、金属端子３０６ｂと導体パターン４０４との接合強度が向上するだけでなく、接合信頼性を向上させる事ができる。 Further, the convex portion 401d shown in FIG. 17 was formed by plastically deforming the connecting portion 401c into a protruding shape, but as shown in FIG. 21, a through hole is formed at the tip portion of the convex portion 401d. Also good. The convex portion 401d of the connecting portion 401c shown in FIG. 21 forms a through hole by punching a part of the portion that should become the convex portion 401d when the connecting portion 401c is pressed. At this time, the punching direction at the time of the press working may be a direction from the mounting surface side where the capacitor main body 306a is connected to the metal terminal 306b toward the surface side in contact with the conductor pattern 404. In this way, the return at the time of punching occurs on the side of the surface in contact with the conductor pattern 404, so that the return becomes the convex portion 401d. At this time, the return height at the time of punching may be 30 μm or more and 300 μm or less. Moreover, the number of through holes should just be one or more, and it is desirable to provide a plurality of convex portions 401d in which the through holes are formed. In this case, when the solder spreads in the through hole, the bonding area between the metal terminal 306b and the solder increases as compared with the conventional case. As a result, not only the bonding strength between the metal terminal 306b and the conductor pattern 404 is improved, but also the bonding reliability can be improved.
　上述のように、金属端子付きセラミックコンデンサであるコンデンサ２０９と導体パターン４０４との接合部であるはんだ接合部４０２のはんだ厚を確保する事で、当該はんだ接合部４０２の接合信頼性を向上させる事が出来る。そこで、図２２に示すように、金属端子３０６ｂの先端側に位置する接続部４０１ｃと、本体側部４０１ｂとのなす角度θ２が鋭角であってもよい。この場合、接続部４０１ｃと導体パターン４０４の表面とが、接続部４０１ｃと本体側部４０１ｂとの連結部側でなす角度θ１も０°越えとなる。このように接続部４０１ｃが導体パターン４０４の表面に対して傾斜した状態となることで、はんだ接合部４０２を構成するはんだの厚みを厚くすることができる。また、接続部４０１ｃにはんだ４０２がどこまで濡れあがっているかを外観目視検査にて判断が容易になるという効果が得られる。 As described above, it is possible to improve the bonding reliability of the solder joint 402 by securing the solder thickness of the solder joint 402 which is a joint between the capacitor 209 which is a ceramic capacitor with a metal terminal and the conductor pattern 404. I can do it. Therefore, as shown in FIG. 22, the angle θ2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an acute angle. In this case, an angle θ1 formed between the connecting portion 401c and the surface of the conductor pattern 404 on the connecting portion side between the connecting portion 401c and the main body side portion 401b also exceeds 0 °. As described above, since the connection portion 401c is inclined with respect to the surface of the conductor pattern 404, the thickness of the solder constituting the solder joint portion 402 can be increased. In addition, it is possible to obtain an effect that it is easy to determine how much the solder 402 has been wetted by the connection portion 401c by visual inspection.
　また、図２３に示すように、金属端子３０６ｂの先端側に位置する接続部４０１ｃと、本体側部４０１ｂとのなす角度θ２が鈍角であってもよい。この場合、接続部４０１ｃと導体パターン４０４の表面とが、接続部４０１ｃの先端側でなす角度θ３も０°越えとなる。このように接続部４０１ｃが導体パターン４０４の表面に対して傾斜した状態となることで、図２２に示した構成と同様に、はんだ接合部４０２を構成するはんだの厚みを厚くすることができる。また、接続部４０１ｃにはんだ４０２がどこまで濡れあがっているかを外観目視検査にて判断が容易になるという効果が得られる。 Further, as shown in FIG. 23, the angle θ2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an obtuse angle. In this case, an angle θ3 formed between the connection portion 401c and the surface of the conductor pattern 404 on the front end side of the connection portion 401c also exceeds 0 °. As described above, since the connection portion 401c is inclined with respect to the surface of the conductor pattern 404, the thickness of the solder constituting the solder joint portion 402 can be increased as in the configuration shown in FIG. In addition, it is possible to obtain an effect that it is easy to determine how much the solder 402 has been wetted by the connection portion 401c by visual inspection.
　＜作用効果＞
　ここで、上述したコンデンサ２０９のはんだ付けについて従来のプリント基板上へのはんだ付けを想定すると、以下のようなプロセスが考えられる。すなわち、フラックスを含有したはんだペーストを導体パターン４０４上に印刷した上に、コンデンサ２０９を載置して加熱することではんだ付けする。このようにすれば、金属端子３０６ｂの接続部４０１ｃ下にはんだが濡れ広がる事が出来る。しかし、コンデンサ２０９の自重により濡れ拡がったはんだが接続部４０１ｃの下から押し出されて、接続部４０１ｃ下のはんだ厚を十分に確保する事が難しかった。また、コンデンサ２０９の近傍に矩形状もしくは球状のはんだ材を載置してはんだ付けする際は、溶融したはんだ材が濡れ広がる事で金属端子３０６ｂの接続部４０１ｃ下にはんだ材が濡れ広がらねばならない。この場合も、十分な接合信頼性を得るための接続部４０１ｃ下のはんだ厚を確保する事が困難であった。そこで図１７～図２１に示すように金属端子３０６ｂの接続部４０１ｃにおける下面（裏面）に凸部４０１ｄを設ける事で、金属端子３０６ｂ下のはんだの厚みを十分に確保する事を可能にした。 <Effect>
Here, assuming the conventional soldering of the capacitor 209 on the printed circuit board, the following process can be considered. That is, after solder paste containing flux is printed on the conductor pattern 404, the capacitor 209 is placed and soldered by heating. In this way, the solder can spread under the connecting portion 401c of the metal terminal 306b. However, it has been difficult to ensure a sufficient solder thickness under the connecting portion 401c because the solder wetted and spread by the weight of the capacitor 209 is pushed out from under the connecting portion 401c. When a rectangular or spherical solder material is placed in the vicinity of the capacitor 209 and soldered, the molten solder material must be wet and spread so that the solder material is wet and spread under the connection portion 401c of the metal terminal 306b. . Also in this case, it is difficult to secure the solder thickness under the connection portion 401c for obtaining sufficient bonding reliability. Therefore, as shown in FIGS. 17 to 21, by providing the convex portion 401d on the lower surface (back surface) of the connecting portion 401c of the metal terminal 306b, it is possible to sufficiently secure the thickness of the solder under the metal terminal 306b.
　すなわち、上記電力用半導体モジュールにおいて、金属端子３０６ｂは、導体パターン４０４と接続される接続部４０１ｃを含む。接続部４０１ｃの一部には導体パターン４０４側に向かって突出した形状である凸部４０１ｄが形成される。電力用半導体モジュールは、接続部４０１ｃの一部以外の部分と導体パターン４０４との間に配置された導電性の接合部材としてのはんだを含むはんだ接合部４０２を備える。 That is, in the power semiconductor module, the metal terminal 306 b includes a connection portion 401 c connected to the conductor pattern 404. A protruding portion 401d having a shape protruding toward the conductor pattern 404 is formed on a part of the connecting portion 401c. The power semiconductor module includes a solder joint 402 including solder as a conductive joint member disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
　この場合、接続部４０１ｃの一部に凸部４０１ｄが形成されているため、当該凸部４０１ｄの突出高さだけ接合部材としてのはんだの厚みを確保することができる。この結果、はんだにより接続部４０１ｃと導体パターン４０４とが接続された接合構造の信頼性を向上させることができる。 In this case, since the convex portion 401d is formed in a part of the connecting portion 401c, the thickness of the solder as the joining member can be ensured by the protruding height of the convex portion 401d. As a result, the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
　上記電力用半導体モジュールにおいて、図２１に示すように凸部４０１ｄには貫通孔４０１ｅが形成されていてもよい。この場合、金属端子３０６ｂの接続部４０１ｃに貫通孔４０１ｅを形成するときに当該接続部４０１ｃの一部を塑性変形させることで、凸部４０１ｄを容易に形成できる。また、貫通孔４０１ｅの内部にも接合部材としてのはんだを配置することができるので、当該はんだと接続部４０１ｃとの接触面積を大きくでき、接合構造の信頼性をより高めることができる。 In the power semiconductor module, a through-hole 401e may be formed in the convex portion 401d as shown in FIG. In this case, when the through hole 401e is formed in the connection portion 401c of the metal terminal 306b, the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c. Moreover, since the solder as a joining member can be arrange | positioned also inside the through-hole 401e, the contact area of the said solder and the connection part 401c can be enlarged, and the reliability of joining structure can be improved more.
　上記電力用半導体モジュールにおいて、金属端子３０６ｂは、接続部４０１ｃと本体側部４０１ｂとを含む。接続部４０１ｃは、導体パターン４０４と接続される。本体側部４０１ｂは、接続部４０１ｃに連なりコンデンサ本体３０６ａに接続される。本体側部４０１ｂの延在方向に対して接続部４０１ｃの延在方向は交差している。図２２に示すように本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鋭角である。 In the power semiconductor module, the metal terminal 306b includes a connection portion 401c and a main body side portion 401b. The connection part 401 c is connected to the conductor pattern 404. The main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c. The extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
　上記電力用半導体モジュールにおいて、金属端子３０６ｂは、接続部４０１ｃと本体側部４０１ｂとを含む。接続部４０１ｃは導体パターン４０４と接続される。本体側部４０１ｂは、接続部４０１ｃに連なりコンデンサ本体３０６ａに接続される。本体側部４０１ｂの延在方向に対して接続部４０１ｃの延在方向は交差している。図２３に示すように本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鈍角である。 In the power semiconductor module, the metal terminal 306b includes a connection portion 401c and a main body side portion 401b. The connection part 401 c is connected to the conductor pattern 404. The main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c. The extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
　この場合、導体パターン４０４の表面に対してほぼ垂直な方向に本体側部４０１ｂの延在方向が沿うように、コンデンサ２０９を導体パターン４０４と接続すれば、接続部４０１ｃは導体パターン４０４の表面に対して傾斜した状態となる。このため、導体パターン４０４と接続部４０１ｃとの間に接合部材としてはんだを配置するときに、当該はんだの厚さを十分に確保できる。このため、はんだにより接続部４０１ｃと導体パターン４０４とが接続された接合構造の信頼性を向上させることができる。 In this case, if the capacitor 209 is connected to the conductor pattern 404 so that the extending direction of the main body side portion 401b is along a direction substantially perpendicular to the surface of the conductor pattern 404, the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when solder is disposed as a joining member between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
　本開示に従った電子部品としてのコンデンサ２０９は、セラミック電子部品本体としてのコンデンサ本体３０６ａと、金属端子３０６ｂとを備える。コンデンサ本体３０６ａは、互いに対向する２つの端面を有し、２つの端面上に形成された外部電極を含む。金属端子３０６ｂは、外部電極に接続される。金属端子３０６ｂは、外部の導体層としての導体パターン４０４と接続されるべき接続部４０１ｃを含む。図１７～図２１に示すように、接続部４０１ｃの一部には凸部４０１ｄが形成されている。 A capacitor 209 as an electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b. Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces. The metal terminal 306b is connected to an external electrode. The metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer. As shown in FIGS. 17 to 21, a convex portion 401d is formed on a part of the connecting portion 401c.
　このようにすれば、接続部４０１ｃの一部に凸部４０１ｄが形成されているため、導体パターン４０４と接続部４０１ｃとを接合部材であるはんだを介して接続する場合に、当該凸部４０１ｄの突出高さだけはんだの厚みを確保することができる。この結果、はんだにより接続部４０１ｃと導体パターン４０４とが接続された接合構造の信頼性を向上させることができる。 In this way, since the convex portion 401d is formed on a part of the connecting portion 401c, when the conductor pattern 404 and the connecting portion 401c are connected via solder as a joining member, the convex portion 401d The thickness of the solder can be ensured by the protruding height. As a result, the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
　上記電子部品において、図２１に示すように凸部４０１ｄには貫通孔４０１ｅが形成されていてもよい。この場合、金属端子３０６ｂの接続部４０１ｃに貫通孔４０１ｅを形成するときに当該接続部４０１ｃの一部を塑性変形させることで、凸部４０１ｄを容易に形成できる。また、貫通孔４０１ｅの内部にもはんだを配置することができるので、当該はんだと接続部４０１ｃとの接触面積を大きくでき、接合構造の信頼性をより高めることができる。 In the electronic component, a through hole 401e may be formed in the convex portion 401d as shown in FIG. In this case, when the through hole 401e is formed in the connection portion 401c of the metal terminal 306b, the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c. In addition, since solder can be disposed inside the through hole 401e, the contact area between the solder and the connection portion 401c can be increased, and the reliability of the joint structure can be further increased.
　本開示に従った電子部品は、セラミック電子部品本体としてのコンデンサ本体３０６ａと、金属端子３０６ｂとを備える。コンデンサ本体３０６ａは、互いに対向する２つの端面を有し、２つの端面上に形成された外部電極を含む。金属端子３０６ｂは、外部電極に接続される。金属端子３０６ｂは、外部の導体層としての導体パターン４０４と接続されるべき接続部４０１ｃと、接続部４０１ｃに連なりコンデンサ本体３０６ａに接続される本体側部４０１ｂとを含む。本体側部４０１ｂの延在方向に対して接続部４０１ｃの延在方向は交差している。図２２に示すように本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鋭角である。 The electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b. Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces. The metal terminal 306b is connected to an external electrode. The metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a. The extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
　本開示に従った電子部品は、セラミック電子部品本体としてのコンデンサ本体３０６ａと、金属端子３０６ｂとを備える。コンデンサ本体３０６ａは、互いに対向する２つの端面を有し、２つの端面上に形成された外部電極を含む。金属端子３０６ｂは、外部電極に接続される。金属端子３０６ｂは、外部の導体層としての導体パターン４０４と接続されるべき接続部４０１ｃと、接続部４０１ｃに連なりコンデンサ本体３０６ａに接続される本体側部４０１ｂとを含む。本体側部４０１ｂの延在方向に対して接続部４０１ｃの延在方向は交差している。図２３に示すように本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鈍角である。 The electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b. Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces. The metal terminal 306b is connected to an external electrode. The metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a. The extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
　この場合、導体パターン４０４の表面に対してほぼ垂直な方向に本体側部４０１ｂの延在方向が沿うように、電子部品を導体パターン４０４と接続すれば、接続部４０１ｃは導体パターン４０４の表面に対して傾斜した状態となる。このため、導体パターン４０４と接続部４０１ｃとの間に接合部材としてのはんだを配置するときに、当該はんだの厚さを十分に確保できる。このため、はんだにより接続部４０１ｃと導体パターン４０４とが接続された接合構造の信頼性を向上させることができる。 In this case, if the electronic component is connected to the conductor pattern 404 so that the extending direction of the main body side portion 401b is along a direction substantially perpendicular to the surface of the conductor pattern 404, the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when the solder as the joining member is disposed between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
　本開示に従った電力用半導体モジュールは、図１および図２に示すように少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐと、少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎと、導体パターンと、上記電子部品としてのコンデンサ２０９とを備える。導体パターンには、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子のいずれか一方が電気的に接続される。コンデンサ２０９は、導体パターンと電気的に接続される。 As shown in FIGS. 1 and 2, the power semiconductor module according to the present disclosure includes at least one positive-side power semiconductor element 103P and positive-side return diode 104P, and at least one negative-side power. A negative electrode side switching element 103N and a negative electrode side reflux diode 104N, which are semiconductor elements for use, a conductor pattern, and a capacitor 209 as the electronic component. One of at least one positive power semiconductor element and at least one negative power semiconductor element is electrically connected to the conductor pattern. Capacitor 209 is electrically connected to the conductor pattern.
　このようにすれば、電子部品としてのコンデンサ２０９の接続部４０１ｃと、導体パターンと電気的につながった導体層である導体パターン４０４との接合構造において、はんだなどの接合部材の厚さを十分に確保できる。この結果、接合構造の信頼性が向上した、長寿命化が可能な電力用半導体モジュールを得ることができる。 In this way, in the joint structure between the connection portion 401c of the capacitor 209 as an electronic component and the conductor pattern 404 that is a conductor layer electrically connected to the conductor pattern, the thickness of the joining member such as solder is sufficiently increased. It can be secured. As a result, it is possible to obtain a power semiconductor module capable of extending the service life with improved reliability of the joint structure.
　上記電力用半導体モジュールは、封止体２０５（図２参照）を備える。封止体２０５は、少なくとも１つの正極側電力用半導体素子と少なくとも１つの負極側電力用半導体素子とに対応する半導体素子２０４、および電子部品としてのコンデンサ２０９を封止する。封止体はエポキシ樹脂を含む。 The power semiconductor module includes a sealing body 205 (see FIG. 2). The sealing body 205 seals the semiconductor element 204 corresponding to at least one positive power semiconductor element and at least one negative power semiconductor element, and the capacitor 209 as an electronic component. The sealing body contains an epoxy resin.
　この場合、封止体２０５としてエポキシ樹脂を用いるため、コンデンサ２０９が接続された導体パターン４０４など電子部品近傍の構造の変形を封止体により抑制できる。このため、当該コンデンサ２０９近傍における上記変形に起因する応力の発生を抑制できる。 In this case, since an epoxy resin is used as the sealing body 205, deformation of the structure near the electronic component such as the conductor pattern 404 to which the capacitor 209 is connected can be suppressed by the sealing body. For this reason, generation | occurrence | production of the stress resulting from the said deformation | transformation in the said capacitor | condenser 209 vicinity can be suppressed.
　上記電力用半導体モジュールは、導体層としての導体パターン４０４を備える。導体パターン４０４は、半導体素子２０４が搭載された導体パターンと同一レイヤにより構成される。電子部品としてのコンデンサ２０９は導体パターン４０４に接続されている。 The power semiconductor module includes a conductor pattern 404 as a conductor layer. The conductor pattern 404 is composed of the same layer as the conductor pattern on which the semiconductor element 204 is mounted. A capacitor 209 as an electronic component is connected to the conductor pattern 404.
　この場合、電子部品としてのコンデンサ２０９が、導体パターンと同一レイヤにより構成される導体パターン４０４に接続されているので、導体パターンなどが形成された基板とは別の基板を、電子部品としてのコンデンサ２０９を実装するために用いる場合より、電力用半導体モジュールの構成を簡略化できるとともに、当該導体パターン４０４と電子部品としてのコンデンサ２０９との接合部の実装が容易なため当該接合部を信頼性高く形成することができる。 In this case, since the capacitor 209 as an electronic component is connected to the conductor pattern 404 formed of the same layer as the conductor pattern, a substrate different from the substrate on which the conductor pattern or the like is formed is replaced with a capacitor as an electronic component. The configuration of the power semiconductor module can be simplified as compared with the case of using for mounting 209, and the bonding portion between the conductor pattern 404 and the capacitor 209 as an electronic component can be easily mounted, so that the bonding portion is highly reliable. Can be formed.
　また、上記電力用半導体モジュールにおいて、コンデンサ本体３０６ａ下に位置する空間にアンダーフィル剤が配置されていてもよい。アンダーフィル剤は封止体２０５とは異なる材料から構成されていてもよい。 In the power semiconductor module, an underfill agent may be disposed in a space located under the capacitor body 306a. The underfill agent may be made of a material different from that of the sealing body 205.
　上述した各実施の形態に係る電力用半導体モジュールの特徴的な構成を要約すれば、電力用半導体モジュールは、少なくとも１つの半導体素子２０４と、導体パターン２０３ａ、２０３ｅ、２０３ｆ、２０３ｊ、と、少なくとも１つのスナバ回路１０６と、封止体２１５と、中間部材としてのスナバ回路用基板２３０（図１２参照）または金属端子３０６ｂ（図８参照）と、接合材としてのはんだ２３１（図１２参照）またははんだ接合部２１１（図８参照）とを備える。半導体素子２０４の一例としては、たとえば少なくとも１つの正極側電力用半導体素子である正極側スイッチング素子１０３Ｐおよび正極側還流ダイオード１０４Ｐと、少なくとも１つの負極側電力用半導体素子である負極側スイッチング素子１０３Ｎおよび負極側還流ダイオード１０４Ｎとが挙げられる。導体パターン２０３ａには、少なくとも１つの半導体素子２０４が接続される。少なくとも１つのスナバ回路１０６は、導体パターン２０３ｊ（図１２参照）または導体パターン２０３ｄ（図８参照）と電気的に接続される。少なくとも１つのスナバ回路１０６は、コンデンサとしての図１２のコンデンサ２０９または図８のコンデンサ本体３０６ａと抵抗体２１０とが直列に接続された回路である。封止体２０５は、少なくとも１つの半導体素子２０４、導体パターン２０３ａ、２０３ｅ、２０３ｆ、２０３ｊ、コンデンサとしての図１２のコンデンサ２０９または図８のコンデンサ本体３０６ｂおよび抵抗体２１０を封止する。中間部材としてのスナバ回路用基板２３０（図１２参照）または金属端子３０６ｂ（図８参照）はコンデンサとしての図１２のコンデンサ２０９または図８のコンデンサ本体３０６ｂと接続される。接合材としてのはんだ２３１（図１２参照）またははんだ接合部２１１（図８参照）は、当該部材を導体パターン２０３ｊ、２０３ｅ、２０３ｆに接続する。 To summarize the characteristic configuration of the power semiconductor module according to each of the above-described embodiments, the power semiconductor module includes at least one semiconductor element 204, conductor patterns 203a, 203e, 203f, 203j, and at least one. Snubber circuit 106, sealing body 215, snubber circuit substrate 230 (see FIG. 12) or metal terminal 306b (see FIG. 8) as an intermediate member, and solder 231 (see FIG. 12) or solder as a bonding material A joining portion 211 (see FIG. 8). As an example of the semiconductor element 204, for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N. At least one semiconductor element 204 is connected to the conductor pattern 203a. At least one snubber circuit 106 is electrically connected to the conductor pattern 203j (see FIG. 12) or the conductor pattern 203d (see FIG. 8). The at least one snubber circuit 106 is a circuit in which the capacitor 209 in FIG. 12 as a capacitor or the capacitor main body 306a in FIG. 8 and the resistor 210 are connected in series. The sealing body 205 seals at least one semiconductor element 204, the conductor patterns 203a, 203e, 203f, and 203j, the capacitor 209 in FIG. 12 as a capacitor, or the capacitor body 306b and the resistor 210 in FIG. The snubber circuit board 230 (see FIG. 12) or the metal terminal 306b (see FIG. 8) as an intermediate member is connected to the capacitor 209 in FIG. 12 or the capacitor body 306b in FIG. A solder 231 (see FIG. 12) or a solder joint portion 211 (see FIG. 8) as a joining material connects the member to the conductor patterns 203j, 203e, and 203f.
　上記電力用半導体モジュールにおいて、少なくとも１つのスナバ回路１０６は、図３および図４に示すように、少なくとも１つの追加コンデンサとしてのコンデンサ２０９ｂと並列抵抗体としての抵抗体２３３ａ、２３３ｂとを含んでもよい。少なくとの１つの追加コンデンサ２０９ｂは、上記コンデンサ２０９ａおよび抵抗体２１０と直列に接続されてもよい。並列抵抗体としての抵抗体２３３ａ、２３３ｂは、コンデンサ２０９ａおよび少なくとも１つの追加コンデンサ２０９ｂのそれぞれと並列に接続されてもよい。 In the power semiconductor module, at least one snubber circuit 106 may include at least one capacitor 209b as an additional capacitor and resistors 233a and 233b as parallel resistors, as shown in FIGS. . At least one additional capacitor 209 b may be connected in series with the capacitor 209 a and the resistor 210. Resistors 233a and 233b as parallel resistors may be connected in parallel with each of capacitor 209a and at least one additional capacitor 209b.
　上記電力用半導体モジュールにおいて、図１２に示すように、中間部材は、絶縁基板としてのセラミック基板２３０ａと、スナバ回路用導体パターンとしての導体パターン２３０ｃ～２３０ｅとを含んでもよい。セラミック基板２３０ａは表面を有する。導体パターン２３０ｃ～２３０ｅは、セラミック基板２３０ａの表面に形成されてもよい。コンデンサ２０９はスナバ導体パターン２３０ｃ、２３０ｄに接続されてもよい。 In the above power semiconductor module, as shown in FIG. 12, the intermediate member may include a ceramic substrate 230a as an insulating substrate and conductor patterns 230c to 230e as snubber circuit conductor patterns. Ceramic substrate 230a has a surface. The conductor patterns 230c to 230e may be formed on the surface of the ceramic substrate 230a. The capacitor 209 may be connected to the snubber conductor patterns 230c and 230d.
　上記電力用半導体モジュールにおいて、スナバ回路用導体パターンは、第１導体パターンとしての導体パターン２３０ｃと、第２導体パターンとしての導体パターン２３０ｄとを含んでもよい。導体パターン２３０ｄは、導体パターン２３０ｃと間隔を隔てて配置される。コンデンサ２０９は導体パターン２３０ｃと導体パターン２３０ｄとを繋ぐように配置されてもよい。電力用半導体モジュールは、絶縁体としてのアンダーフィル剤を備えてもよい。絶縁体は、コンデンサ２０９と導体パターン２３０ｃと導体パターン２３０ｄとに囲まれた空間２２０に配置され、封止体２０５とは異なる材料からなっていてもよい。 In the power semiconductor module, the snubber circuit conductor pattern may include a conductor pattern 230c as a first conductor pattern and a conductor pattern 230d as a second conductor pattern. The conductor pattern 230d is disposed at a distance from the conductor pattern 230c. The capacitor 209 may be disposed so as to connect the conductor pattern 230c and the conductor pattern 230d. The power semiconductor module may include an underfill agent as an insulator. The insulator may be disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 230c, and the conductor pattern 230d, and may be made of a material different from that of the sealing body 205.
　図１５および図１６に示す上記電力用半導体モジュールにおいて、コンデンサ２０９は、図５に示すように、コンデンサ本体５０１ａと、当該コンデンサ本体５０１ａの表面に形成された外部電極５０１ｂとを含んでもよい。外部電極５０１ｂはスナバ回路用導体パターンとしての導体パターン２３０ｃ、２３０ｄに接続されてもよい。 15 and 16, the capacitor 209 may include a capacitor body 501a and an external electrode 501b formed on the surface of the capacitor body 501a, as shown in FIG. The external electrode 501b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
　図１２～図１４に示した上記電力用半導体モジュールにおいて、コンデンサ２０９は、コンデンサ本体３０６ａと、当該コンデンサ本体３０６ａに接続された金属端子３０６ｂとを含んでもよい。金属端子３０６ｂはスナバ回路用導体パターンとしての導体パターン２３０ｃ、２３０ｄに接続されてもよい。 12 to 14, the capacitor 209 may include a capacitor main body 306a and a metal terminal 306b connected to the capacitor main body 306a. The metal terminal 306b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
　上記電力用半導体モジュールにおいて、中間部材は、図８などに示すようにコンデンサとしてのコンデンサ本体３０６ａに接続された金属端子３０６ｂを含んでもよい。金属端子３０６ｂは導体パターン２０３ｅ、２０３ｆに接合材としてのはんだ接合部２１１により接続されてもよい。 In the power semiconductor module, the intermediate member may include a metal terminal 306b connected to a capacitor body 306a as a capacitor as shown in FIG. The metal terminal 306b may be connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material.
　上記電力用半導体モジュールにおいて、導体パターンは、図１１に示すように、第１導体パターンとしての導体パターン３０３ｂと、第２導体パターンとしての導体パターン３０３ｃとを含んでもよい。導体パターン３０３ｃは、導体パターン３０３ｂと間隔を隔てて配置されてもよい。コンデンサ２０９は導体パターン３０３ｂと導体パターン３０３ｃとを繋ぐように配置されてもよい。電力用半導体モジュールは、絶縁体としてのアンダーフィル剤を備えてもよい。アンダーフィル剤は、コンデンサ２０９と導体パターン３０３ｂと導体パターン３０３ｃとに囲まれた空間に配置され、封止体２０５とは異なる材料からなっていてもよい。 In the power semiconductor module, the conductor pattern may include a conductor pattern 303b as a first conductor pattern and a conductor pattern 303c as a second conductor pattern, as shown in FIG. The conductor pattern 303c may be arranged at a distance from the conductor pattern 303b. The capacitor 209 may be disposed so as to connect the conductor pattern 303b and the conductor pattern 303c. The power semiconductor module may include an underfill agent as an insulator. The underfill agent may be disposed in a space surrounded by the capacitor 209, the conductor pattern 303b, and the conductor pattern 303c, and may be made of a material different from that of the sealing body 205.
　上記電力用半導体モジュールにおいて、図１７～図２１に示すように、金属端子４０１ｂは、導体パターン４０４と接続される接続部４０１ｃを含んでもよい。接続部４０１ｃの一部には導体パターン４０４側に向かって突出した形状である凸部４０１ｄが形成されてもよい。接合材としてのはんだ接合部４０２は、接続部４０１ｃの一部以外の部分と導体パターン４０４との間に配置された導電性の材料であってもよい。 In the power semiconductor module, the metal terminal 401b may include a connection portion 401c connected to the conductor pattern 404 as shown in FIGS. A protruding portion 401d having a shape protruding toward the conductor pattern 404 may be formed on a part of the connecting portion 401c. The solder joint portion 402 as a joining material may be a conductive material disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
　上記電力用半導体モジュールにおいて、図２１に示すように凸部４０１ｄには貫通孔４０１ｅが形成されてもよい。 In the power semiconductor module, a through hole 401e may be formed in the convex portion 401d as shown in FIG.
　上記電力用半導体モジュールにおいて、金属端子は、図２２または図２３に示すように、導体パターン４０４と接続される接続部４０１ｃと、当該接続部４０１ｃに連なりコンデンサとしてのコンデンサ本体３０６ａに接続される本体側部４０１ｂとを含んでもよい。本体側部４０１ｂの延在方向に対して接続部４０１ｃの延在方向は交差していてもよい。図２２に示すように、本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鋭角であってもよい。あるいは、図２３に示すように、本体側部４０１ｂの延在方向と接続部４０１ｃの延在方向とのなす角度θ２は鈍角であってもよい。また、当該角度θ２は直角でもよい。 In the power semiconductor module, as shown in FIG. 22 or FIG. 23, the metal terminal includes a connection portion 401c connected to the conductor pattern 404 and a main body connected to the connection portion 401c and connected to a capacitor main body 306a as a capacitor. The side portion 401b may be included. The extending direction of the connecting portion 401c may intersect the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an acute angle. Alternatively, as shown in FIG. 23, the angle θ2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an obtuse angle. Further, the angle θ2 may be a right angle.
　上記電力用半導体モジュールは、配線部材２０６をさらに備えてもよい。配線部材２０６は、少なくとも１つの正極側電力用半導体素子および少なくとも１つの負極側電力用半導体素子のいずれかである少なくとも１つの半導体素子２０４に接続されてもよい。図１０に示すように、導体パターン３０３ｂから配線部材２０６の頂部までの高さＨ２より、導体パターン３０３ｃからコンデンサ２０９の頂部までの高さＨ１が低くてもよい。 The power semiconductor module may further include a wiring member 206. The wiring member 206 may be connected to at least one semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element. As shown in FIG. 10, the height H1 from the conductor pattern 303c to the top of the capacitor 209 may be lower than the height H2 from the conductor pattern 303b to the top of the wiring member 206.
　以上のように本発明の実施の形態について説明を行ったが、上述の実施の形態を様々に変形することも可能である。また、本発明の範囲は上述の実施の形態および実施例に限定されるものではない。本発明の範囲は、請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更を含むことが意図される。 Although the embodiments of the present invention have been described above, the above-described embodiments can be variously modified. Further, the scope of the present invention is not limited to the above-described embodiments and examples. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　本開示は、実装時の接合品質が安定化可能なセラミック電子部品とこのセラミック電子部品を実装し、ＩＧＢＴやＭＯＳＦＥＴ等をスイッチング素子とする電力用半導体モジュールに有利に適用される。 The present disclosure is advantageously applied to a ceramic electronic component capable of stabilizing the bonding quality at the time of mounting and a power semiconductor module in which the ceramic electronic component is mounted and an IGBT, a MOSFET, or the like is used as a switching element.
　３０　電源、１０１　電力用半導体モジュール、１０２　モーター、１０３Ｎ　負極側スイッチング素子、１０３Ｐ　正極側スイッチング素子、１０４Ｎ　負極側還流ダイオード、１０４Ｐ　正極側還流ダイオード、１０５ａ～１０５ｃ　レグ、１０６　スナバ回路、２０１　ベース板、２０２　ケース、２０３　ベース絶縁基板、２０３ａ，２０３ｃ，２０３ｄ，２０３ｅ，２０３ｆ，２０３ｇ，２０３ｈ，２０３ｊ，２３０ｂ，２３０ｃ，２３０ｄ，２３０ｅ，２３０ｆ，３０３ａ，３０３ｂ，３０３ｃ，４０４，５０４ａ，５０４ｂ，５０４ｄ，５０４ｅ　導体パターン、２０３ｂ　絶縁材、２０３ｉ　導体層、２０４　半導体素子、２０４ａ　スイッチング素子、２０４ｂ　還流ダイオード、２０５　封止体、２０６　配線部材、２０７ｂ，５０８　はんだ、２０８　端子、２０９　コンデンサ、２１０　抵抗体、２１１，３０７，４０２　はんだ接合部、２１５　上部封止体、２２０　空間、２３２　スルーホール、３０２　ダイボンド材、３０４　絶縁層、３０５　ベース部材、３０６ａ，３０６ｂ，５０１ａ　コンデンサ本体、３０６ｂ　金属端子、３０６ｃ，４０１ｃ，４０１ｄ　接続部、３０８　はんだ規制部、４０１ｂ　本体側部、４０１ｄ　凸部、４０１ｅ　貫通孔、４０３，５０３ａ，５０３ｂ　ソルダーレジスト、５０１ａ　コンデンサ本体部、５０１ｂ　外部電極、２３０ａ，５０４ｃ　セラミック基板、５０６ａ　抵抗膜、５０６ｂ　セラミック板、５０６ｃ　ボンディングパッド、５０７　配線材。 30 power source, 101 power semiconductor module, 102 motor, 103N negative side switching element, 103P positive side switching element, 104N negative side reflux diode, 104P positive side reflux diode, 105a to 105c leg, 106 snubber circuit, 201 base plate, 202 Case, 203 base insulating substrate, 203a, 203c, 203d, 203e, 203f, 203g, 203h, 203j, 230b, 230c, 230d, 230e, 230f, 303a, 303b, 303c, 404, 504a, 504b, 504d, 504e Conductor pattern , 203b insulating material, 203i conductor layer, 204 semiconductor element, 204a switching element, 204b reflux diode, 205 sealing body, 206 wiring member, 07b, 508 solder, 208 terminal, 209 capacitor, 210 resistor, 211, 307, 402 solder joint, 215 upper sealing body, 220 space, 232 through hole, 302 die bond material, 304 insulating layer, 305 base member, 306a , 306b, 501a capacitor main body, 306b metal terminal, 306c, 401c, 401d connecting part, 308 solder regulating part, 401b main body side part, 401d convex part, 401e through hole, 403, 503a, 503b solder resist, 501a capacitor main part, 501b external electrode, 230a, 504c ceramic substrate, 506a resistive film, 506b ceramic plate, 506c bonding pad, 507 wiring material.

Claims (23)

  1. 　少なくとも１つの半導体素子と、
    　前記少なくとも１つの半導体素子が接続される導体パターンと、
    　前記導体パターンと電気的に接続される少なくとも１つのスナバ回路とを備え、
    　前記少なくとも１つのスナバ回路は、コンデンサと抵抗体とが直列に接続された回路であり、さらに、
    　前記少なくとも１つの半導体素子、前記導体パターン、前記コンデンサおよび前記抵抗体を封止する封止体と、
    　前記コンデンサと接続される中間部材と、
    　前記中間部材を前記導体パターンに接続する接合材とを備える、電力用半導体モジュール。     At least one semiconductor element;
    A conductor pattern to which the at least one semiconductor element is connected;
    And at least one snubber circuit electrically connected to the conductor pattern,
    The at least one snubber circuit is a circuit in which a capacitor and a resistor are connected in series, and
    A sealing body that seals the at least one semiconductor element, the conductor pattern, the capacitor, and the resistor;
    An intermediate member connected to the capacitor;
    A power semiconductor module comprising: a bonding material that connects the intermediate member to the conductor pattern.
  2. 　前記少なくとも１つのスナバ回路は、
    　前記コンデンサおよび前記抵抗体と直列に接続された少なくとも１つの追加コンデンサと、
    　前記コンデンサおよび前記少なくとも１つの追加コンデンサのそれぞれと並列に接続された並列抵抗体とを含む、請求項１に記載の電力用半導体モジュール。     The at least one snubber circuit is
    At least one additional capacitor connected in series with the capacitor and the resistor;
    The power semiconductor module according to claim 1, comprising a parallel resistor connected in parallel with each of the capacitor and the at least one additional capacitor.
  3. 　前記中間部材は、
    　表面を有する絶縁基板と、
    　前記絶縁基板の前記表面に形成されたスナバ回路用導体パターンとを含み、
    　前記コンデンサは前記スナバ回路用導体パターンに接続されている、請求項１または２に記載の電力用半導体モジュール。     The intermediate member is
    An insulating substrate having a surface;
    A snubber circuit conductor pattern formed on the surface of the insulating substrate,
    The power semiconductor module according to claim 1, wherein the capacitor is connected to the conductor pattern for the snubber circuit.
  4. 　前記スナバ回路用導体パターンは、第１導体パターンと、前記第１導体パターンと間隔を隔てて配置された第２導体パターンとを含み、
    　前記コンデンサは前記第１導体パターンと前記第２導体パターンとを繋ぐように配置され、
    　前記コンデンサと前記第１導体パターンと前記第２導体パターンとに囲まれた空間に配置され、前記封止体とは異なる材料からなる絶縁体を備える、請求項３に記載の電力用半導体モジュール。     The snubber circuit conductor pattern includes a first conductor pattern and a second conductor pattern disposed at a distance from the first conductor pattern;
    The capacitor is arranged to connect the first conductor pattern and the second conductor pattern,
    4. The power semiconductor module according to claim 3, comprising an insulator made of a material different from that of the sealing body, which is disposed in a space surrounded by the capacitor, the first conductor pattern, and the second conductor pattern.
  5. 　前記コンデンサは、
    　コンデンサ本体部と、
    　前記コンデンサ本体部の表面に形成された外部電極とを含み、
    　前記外部電極は前記スナバ回路用導体パターンに接続されている、請求項３または４に記載の電力用半導体モジュール。     The capacitor is
    A capacitor body,
    An external electrode formed on the surface of the capacitor body,
    The power semiconductor module according to claim 3 or 4, wherein the external electrode is connected to the conductor pattern for the snubber circuit.
  6. 　前記コンデンサは、
    　コンデンサ本体と、
    　前記コンデンサ本体に接続された金属端子とを含み、
    　前記金属端子は前記スナバ回路用導体パターンに接続さている、請求項３または４に記載の電力用半導体モジュール。     The capacitor is
    A capacitor body;
    A metal terminal connected to the capacitor body,
    The power semiconductor module according to claim 3 or 4, wherein the metal terminal is connected to the conductor pattern for the snubber circuit.
  7. 　前記中間部材は、前記コンデンサに接続された金属端子を含み、
    　前記金属端子は前記導体パターンに前記接合材により接続されている、請求項１または２に記載の電力用半導体モジュール。     The intermediate member includes a metal terminal connected to the capacitor,
    The power semiconductor module according to claim 1, wherein the metal terminal is connected to the conductor pattern by the bonding material.
  8. 　前記導体パターンは、第１導体パターンと、前記第１導体パターンと間隔を隔てて配置された第２導体パターンとを含み、
    　前記コンデンサは前記第１導体パターンと前記第２導体パターンとを繋ぐように配置され、
    　前記コンデンサと前記第１導体パターンと前記第２導体パターンとに囲まれた空間に配置され、前記封止体とは異なる材料からなる絶縁体を備える、請求項７に記載の電力用半導体モジュール。     The conductor pattern includes a first conductor pattern and a second conductor pattern disposed at a distance from the first conductor pattern,
    The capacitor is arranged to connect the first conductor pattern and the second conductor pattern,
    The power semiconductor module according to claim 7, further comprising an insulator made of a material different from that of the sealing body, which is disposed in a space surrounded by the capacitor, the first conductor pattern, and the second conductor pattern.
  9. 　前記金属端子は、前記導体パターンと接続される接続部を含み、
    　前記接続部の一部には前記導体パターン側に向かって突出した形状である凸部が形成され、
    　前記接合材は、前記接続部の前記一部以外の部分と前記導体パターンとの間に配置された導電性の材料である、請求項７または８に記載の電力用半導体モジュール。     The metal terminal includes a connection portion connected to the conductor pattern,
    A convex part that is a shape protruding toward the conductor pattern side is formed on a part of the connection part,
    The power semiconductor module according to claim 7 or 8, wherein the bonding material is a conductive material disposed between a portion other than the part of the connection portion and the conductor pattern.
  10. 　前記凸部には貫通孔が形成されている、請求項９に記載の電力用半導体モジュール。 The power semiconductor module according to claim 9, wherein a through hole is formed in the convex portion.
  11. 　前記金属端子は、前記導体パターンと接続される接続部と、前記接続部に連なり前記コンデンサに接続される本体側部とを含み、
    　前記本体側部の延在方向に対して前記接続部の延在方向は交差しており、
    　前記本体側部の延在方向と前記接続部の延在方向とのなす角度は鋭角である、請求項７または８に記載の電力用半導体モジュール。     The metal terminal includes a connection part connected to the conductor pattern, and a main body side part connected to the capacitor connected to the connection part,
    The extending direction of the connecting portion intersects the extending direction of the main body side portion,
    The power semiconductor module according to claim 7 or 8, wherein an angle formed between the extending direction of the main body side portion and the extending direction of the connecting portion is an acute angle.
  12. 　前記金属端子は、前記導体パターンと接続される接続部と、前記接続部に連なり前記コンデンサに接続される本体側部とを含み、
    　前記本体側部の延在方向に対して前記接続部の延在方向は交差しており、
    　前記本体側部の延在方向と前記接続部の延在方向とのなす角度は鈍角である、請求項７または８に記載の電力用半導体モジュール。     The metal terminal includes a connection part connected to the conductor pattern, and a main body side part connected to the capacitor connected to the connection part,
    The extending direction of the connecting portion intersects the extending direction of the main body side portion,
    The power semiconductor module according to claim 7 or 8, wherein an angle formed between the extending direction of the main body side portion and the extending direction of the connecting portion is an obtuse angle.
  13. 　前記封止体は、前記コンデンサが埋設された状態となるように配置されており、
    　前記封止体上に配置された上部封止体をさらに備える、請求項１～１２のいずれか１項に記載の電力用半導体モジュール。     The sealing body is arranged so that the capacitor is embedded,
    The power semiconductor module according to any one of claims 1 to 12, further comprising an upper sealing body disposed on the sealing body.
  14. 　前記少なくとも１つの半導体素子に接続された配線部材をさらに備え、
    　前記導体パターンから前記配線部材の頂部までの高さより、前記導体パターンから前記コンデンサの頂部までの高さが低い、請求項１～１３のいずれか１項に記載の電力用半導体モジュール。     A wiring member connected to the at least one semiconductor element;
    The power semiconductor module according to any one of claims 1 to 13, wherein a height from the conductor pattern to the top of the capacitor is lower than a height from the conductor pattern to the top of the wiring member.
  15. 　互いに対向する２つの端面を有し、前記２つの端面上に形成された外部電極を含むセラミック電子部品本体と、
    　前記外部電極に接続された金属端子とを備え、
    　前記金属端子は、外部の導体層と接続されるべき接続部を含み、
    　前記接続部の一部には凸部が形成されている、電子部品。     A ceramic electronic component body having two end faces facing each other and including external electrodes formed on the two end faces;
    A metal terminal connected to the external electrode,
    The metal terminal includes a connection portion to be connected to an external conductor layer,
    An electronic component, wherein a convex portion is formed on a part of the connection portion.
  16. 　前記凸部には貫通孔が形成されている、請求項１５に記載の電子部品。 The electronic component according to claim 15, wherein a through hole is formed in the convex portion.
  17. 　互いに対向する２つの端面を有し、前記２つの端面上に形成された外部電極を含むセラミック電子部品本体と、
    　前記外部電極に接続された金属端子とを備え、
    　前記金属端子は、外部の導体層と接続されるべき接続部と、前記接続部に連なり前記セラミック電子部品本体に接続される本体側部とを含み、
    　前記本体側部の延在方向に対して前記接続部の延在方向は交差しており、
    　前記本体側部の延在方向と前記接続部の延在方向とのなす角度は鋭角である、電子部品。     A ceramic electronic component body having two end faces facing each other and including external electrodes formed on the two end faces;
    A metal terminal connected to the external electrode,
    The metal terminal includes a connection part to be connected to an external conductor layer, and a main body side part connected to the ceramic electronic component main body connected to the connection part,
    The extending direction of the connecting portion intersects the extending direction of the main body side portion,
    An electronic component, wherein an angle formed between the extending direction of the main body side portion and the extending direction of the connecting portion is an acute angle.
  18. 　互いに対向する２つの端面を有し、前記２つの端面上に形成された外部電極を含むセラミック電子部品本体と、
    　前記外部電極に接続された金属端子とを備え、
    　前記金属端子は、外部の導体層と接続されるべき接続部と、前記接続部に連なり前記セラミック電子部品本体に接続される本体側部とを含み、
    　前記本体側部の延在方向に対して前記接続部の延在方向は交差しており、
    　前記本体側部の延在方向と前記接続部の延在方向とのなす角度は鈍角である、電子部品。     A ceramic electronic component body having two end faces facing each other and including external electrodes formed on the two end faces;
    A metal terminal connected to the external electrode,
    The metal terminal includes a connection part to be connected to an external conductor layer, and a main body side part connected to the ceramic electronic component main body connected to the connection part,
    The extending direction of the connecting portion intersects the extending direction of the main body side portion,
    An electronic component, wherein an angle formed between the extending direction of the main body side portion and the extending direction of the connecting portion is an obtuse angle.
  19. 　少なくとも１つの半導体素子と、
    　前記少なくとも１つの半導体素子が接続される導体パターンと、
    　前記導体パターンと電気的に接続された、請求項１５～１８のいずれか１項に記載の電子部品とを備える電力用半導体モジュール。     At least one semiconductor element;
    A conductor pattern to which the at least one semiconductor element is connected;
    A power semiconductor module comprising the electronic component according to any one of claims 15 to 18, which is electrically connected to the conductor pattern.
  20. 　前記少なくとも１つの半導体素子、前記導体パターン、および前記電子部品を封止する封止体を備える、請求項１９に記載の電力用半導体モジュール。 The power semiconductor module according to claim 19, comprising a sealing body that seals the at least one semiconductor element, the conductor pattern, and the electronic component.
  21. 　前記少なくとも１つの半導体素子は、ワイドバンドギャップ半導体からなる、請求項１～１４、１９、２０のいずれか１項に記載の電力用半導体モジュール。 The power semiconductor module according to any one of claims 1 to 14, 19, and 20, wherein the at least one semiconductor element is made of a wide band gap semiconductor.
  22. 　前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム、ダイヤモンド、酸化ガリウムからなる群から選択される１つである、請求項２１に記載の電力用半導体モジュール。 The power semiconductor module according to claim 21, wherein the wide band gap semiconductor is one selected from the group consisting of silicon carbide, gallium nitride, diamond, and gallium oxide.
  23. 　コンデンサと抵抗体とが直列に接続された回路であるスナバ回路を備える電力用半導体モジュールの製造方法であって、
    　前記スナバ回路が形成される中間部材に前記コンデンサを接続する工程を備え、
    　前記中間部材は、表面を有する絶縁基板と、
    　前記絶縁基板の前記表面に形成されたスナバ回路用導体パターンとを含み、
    　前記接続する工程では、前記コンデンサが前記スナバ回路用導体パターンに接続され、さらに、
    　前記コンデンサが前記スナバ回路用導体パターンに接続された前記絶縁基板を、表面を有するベース絶縁基板に設置する工程を備え、
    　前記ベース絶縁基板の前記表面上には、
    　少なくとも１つの半導体素子と、
    　前記少なくとも１つの半導体素子が接続される導体パターンと、が配置され、
    　前記ベース絶縁基板に設置する工程では、前記絶縁基板が前記ベース絶縁基板の前記導体パターンに接続される、電力用半導体モジュールの製造方法。     A method for producing a power semiconductor module comprising a snubber circuit, which is a circuit in which a capacitor and a resistor are connected in series,
    Connecting the capacitor to an intermediate member on which the snubber circuit is formed,
    The intermediate member includes an insulating substrate having a surface;
    A snubber circuit conductor pattern formed on the surface of the insulating substrate,
    In the connecting step, the capacitor is connected to the conductor pattern for snubber circuit,
    The capacitor is connected to the conductor pattern for the snubber circuit, and the step of installing the insulating substrate on a base insulating substrate having a surface,
    On the surface of the base insulating substrate,
    At least one semiconductor element;
    A conductor pattern to which the at least one semiconductor element is connected, and
    The method of manufacturing a power semiconductor module, wherein, in the step of installing on the base insulating substrate, the insulating substrate is connected to the conductor pattern of the base insulating substrate.
PCT/JP2018/016263 2017-04-21 2018-04-20 Power semiconductor module, electronic component and method for producing power semiconductor module WO2018194153A1 (en)

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