CN107564872A - A kind of chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof - Google Patents
A kind of chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof Download PDFInfo
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- CN107564872A CN107564872A CN201710742254.4A CN201710742254A CN107564872A CN 107564872 A CN107564872 A CN 107564872A CN 201710742254 A CN201710742254 A CN 201710742254A CN 107564872 A CN107564872 A CN 107564872A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
This application discloses a kind of chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof, the chip includes heat-radiating substrate, the front of the heat-radiating substrate offers the through hole of at least one chip slot and at least one insertion front and back, chip body is bonded with the chip slot, the front and side of the chip body, the front and back of the heat-radiating substrate and the through-hole wall are all covered with dielectric layer, the chip body is positively connected with copper bump, the copper bump is connected to the metal ball positioned at the heat-radiating substrate back side using the metallic circuit of the positive and described through hole by the dielectric layer, the outer surface of the metallic circuit is provided with protective layer in addition to the position of the metal ball.Above-mentioned chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof, the radiating effect of chip can be effectively improved on the basis of low cost, optimizes configuration, and without lead frame.
Description
Technical field
The invention belongs to chip encapsulation technology field, more particularly to a kind of core for possessing high radiating fan-out-type encapsulating structure
Piece and preparation method thereof.
Background technology
At present, electronic information technology has been deep into the every field of national economy, and the daily life with us ceases manner of breathing
Close.Microelectronics IC chip encapsulation technology refers to each element and chip composition electronic building brick, module, will by defined circuit
Reasonable Arrangement, assembling, bonding, interconnection are asked, and is isolated with external environment condition, so as to reach a kind of comprehensive Design of protection and manufacture skill
Art.Different encapsulation technologies is widely different in manufacturing process and process aspect, to the performance of memory chip self performance after encapsulation
Also function to vital effect.With the rapid development of photoelectricity, micro- electric manufacturing process technology, electronic product is all the time towards more
Small, lighter and less expensive direction is developed, therefore the packing forms of chip component are also continuously available improvement.
In existing chip-packaging structure, chip is wrapped in injection molding body mostly, mainly the gold by being connected with chip
Category carries out heat transfer with extraneous, and heat-sinking capability is limited, and this sufferings can influence the stability of chip operation.A kind of prior art is modeling
Expect that the encapsulation that substrate material is chip bearing bottom plate, particularly ball type array encapsulation more and use plastic base material, but due to modeling
Expect that the heat conductivility of substrate in itself is poor, cause radiating effect bad, also prior art realizes electricity interconnection using metal wire
Encapsulating structure, chip being bonded on loading plate by macromolecule epoxy resin material more, the radiating effect of resin in itself is poor,
Chip mainly passes through the metallic particles added in resin and carries out heat transfer, and metal is selected to reach more preferable radiating effect
The higher synthetic resin of grain proportion, the relative drop of resin ratio is caused, it is viscous between chip, loading plate to reduce it
Power is tied, and then the reliability such as layering caused by the high stress residual that cohesive force is not strong, metallic particles is brought at high proportion occurs
Problem, is also limited and the semiconductor packages of poor heat radiation by the encapsulating structure of itself, also there is the side using high heat conduction plastic packaging material
Formula improves radiating effect, but high heat conduction plastic packaging material is in addition to high cost price itself, the control to product plastic package process
It it is also proposed higher requirement, and radiating effect unobvious.
The content of the invention
To solve the above problems, the invention provides a kind of chip for possessing high radiating fan-out-type encapsulating structure and its making
Method, the radiating effect of chip can be effectively improved on the basis of low cost, optimize configuration, and without lead frame.
A kind of chip for possessing high radiating fan-out-type encapsulating structure provided by the invention, including heat-radiating substrate, the radiating
The front of substrate offers the through hole of at least one chip slot and at least one insertion front and back, is glued in the chip slot
Chip body is connected to, in the front of the chip body and side, the front and back of the heat-radiating substrate and the through hole
Wall is all covered with dielectric layer, and the chip body is positively connected with copper bump, and the copper bump, which utilizes, passes through the dielectric layer
The metallic circuit of positive and described through hole be connected to the metal ball positioned at the heat-radiating substrate back side, the metallic circuit it is outer
Surface is provided with protective layer in addition to the position of the metal ball.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the copper bump also utilizes only process
The positive metallic circuit of the dielectric layer is connected to positioned at the positive metal ball of the heat-radiating substrate.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the heat-radiating substrate be copper base or
Ceramic substrate.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the chip body utilizes Die-
Attach glue is Nian Jie with the chip slot.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the thickness range of the heat-radiating substrate
For 0.5 millimeter to 5.0 millimeters.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the dielectric layer is ABF layers, bcb layer
Or PI layers.
Preferably, in the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, the metallic circuit is copper cash or silver
Line.
A kind of preparation method of chip for possessing high radiating fan-out-type encapsulating structure provided by the invention, including：
The through hole of at least one chip slot and at least one insertion front and back is opened up in the front of heat-radiating substrate；
Adhering chip body in the chip slot, in the front implantation copper bump of the chip body；
The front of the chip body and side, the front and back of the heat-radiating substrate and the through-hole wall cover
Lid dielectric layer；
Metal seed layer, and plating metal circuit are made in the dielectric layer surface；
Need parts to be protected to cover photoresistance film in the metallic circuit, etch away the metal wire for being not required to area to be protected
Road and metal seed layer, and remove the photoresistance film；
Protective layer is set in the outer surface of the metallic circuit, is reserved at the back side of the heat-radiating substrate and plants ball region,
And utilize the metal of the positive and described through hole by the dielectric layer in ball placement region implanted metal ball, the copper bump
Connection is extremely located at the metal ball at the heat-radiating substrate back side；
Unnecessary dielectric layer is removed, cuts out one single chip.
Preferably, in the preparation method of the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, in the metal wire
The outer surface on road sets protective layer, is reserved at the back side of the heat-radiating substrate and plants ball region, and is implanted into ball placement region
Metal ball, the copper bump is connected to using the metallic circuit of the positive and described through hole by the dielectric layer to be dissipated positioned at described
After the metal ball of hot radical back, in addition to：
Reserved in the front of the heat-radiating substrate and plant ball region, and in ball placement region implanted metal ball, the copper
Copper bump described in salient point is also connected to positioned at the heat-radiating substrate just using the positive metallic circuit only by the dielectric layer
The metal ball in face.
Preferably, it is described in radiating base in the preparation method of the above-mentioned chip for possessing high radiating fan-out-type encapsulating structure
The front of plate opens up at least one chip slot and the through hole of at least one insertion front and back is：
At least one chip slot and at least one insertion front and back are opened up in the front of copper base or ceramic substrate
Through hole.
By foregoing description, the above-mentioned chip and its system for possessing high radiating fan-out-type encapsulating structure provided by the invention
Make method, because the chip includes heat-radiating substrate, the front of the heat-radiating substrate offers at least one chip slot and at least
The through hole of one insertion front and back, is bonded with chip body in the chip slot, the front of the chip body and side,
The front and back of the heat-radiating substrate and the through-hole wall are all covered with dielectric layer, the front connection of the chip body
There is copper bump, the copper bump is connected to positioned at described using the metallic circuit of the positive and described through hole by the dielectric layer
The metal ball at the heat-radiating substrate back side, the outer surface of the metallic circuit are provided with protection in addition to the position of the metal ball
Layer, therefore the radiating effect of chip can be effectively improved on the basis of low cost, optimize configuration, and without lead frame
Frame.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is the schematic diagram for the chip that the first that the embodiment of the present application provides possesses high radiating fan-out-type encapsulating structure；
Fig. 2 is the schematic diagram for the chip that second that the embodiment of the present application provides possesses high radiating fan-out-type encapsulating structure；
Fig. 3 is the preparation method for the chip that the first that the embodiment of the present application provides possesses high radiating fan-out-type encapsulating structure
Schematic diagram.
Embodiment
The core concept of the present invention is to provide a kind of chip for possessing high radiating fan-out-type encapsulating structure and its making side
Method, the radiating effect of chip can be effectively improved on the basis of low cost, optimize configuration, and without lead frame.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The first of the embodiment of the present application offer possesses the chip of high radiating fan-out-type encapsulating structure as shown in figure 1, Fig. 1 is
The first of the embodiment of the present application offer possesses the schematic diagram of the chip of high radiating fan-out-type encapsulating structure, and the chip includes radiating
Substrate 1, the material of the heat-radiating substrate 1 can be but not limited to copper or ceramics, as long as there is sufficiently high heat dispersion,
The front of the heat-radiating substrate 1 offers the through hole 3 of at least one chip slot 2 and at least one insertion front and back, this
In the chip slot 2 that opens up can be more than two, and through hole 3 is also not limited to two in Fig. 1, and this is all according to actual need
Depending on wanting, it is not intended to limit herein, and the depth and width of chip slot are not intended to limit, and chip sheet is bonded with the chip slot 2
Body 4, this mode that direct adhering chip body is slotted on heat-radiating substrate can realize more preferable radiating effect, and need
Stress, using this programme, it becomes possible to opened up on same substrate with various sizes of chip slot, so as to place
Different types of chip body, encapsulated while realizing various chips, greatly improve packaging efficiency, it is whole also to reduce encapsulating structure
The volume of body, the front of the chip body 4 and side, the front and back of the heat-radiating substrate 1 and the inwall of the through hole 3
Dielectric layer 5 is all covered with, the chip body 1 is positively connected with copper bump 6, and the copper bump 6 is using by the dielectric
The metallic circuit of the positive and described through hole 3 of layer 5 is connected to the metal ball 7 positioned at the back side of heat-radiating substrate 1, the metal wire
The outer surface on road is provided with protective layer 8 in addition to the position of the metal ball 7, and in this case, chip body produces
Heat can be directly transferred on heat-radiating substrate, then outside is transmitted to by heat-radiating substrate, without epoxy resin or other every
The stop of hot material, realize that more quickly, it is necessary to illustrate, the Fig. 1 only illustrates only overleaf to set metal for radiating
The mode of ball 7, is actually not limited in this, and metal ball is set in front while can also overleaf setting metal ball,
Also in the protection domain of the embodiment.
By foregoing description, the embodiment of the present application provide the first possess the core of high radiating fan-out-type encapsulating structure
Piece, because the front including heat-radiating substrate, the heat-radiating substrate is offering at least one chip slot and at least one insertion just
Face and the through hole at the back side, chip body, the front of the chip body and side, the radiating base are bonded with the chip slot
The front and back of plate and the through-hole wall are all covered with dielectric layer, and the chip body is positively connected with copper bump,
The copper bump is connected to positioned at the heat-radiating substrate using the metallic circuit of the positive and described through hole by the dielectric layer
The metal ball at the back side, the outer surface of the metallic circuit are provided with protective layer in addition to the position of the metal ball, therefore
The radiating effect of chip can be effectively improved on the basis of low cost, optimizes configuration, and without lead frame.
Second of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides is as shown in Fig. 2 Fig. 2 is
The schematic diagram for second of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides, the chip is above-mentioned
On the basis of the first possesses the chip of high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The copper bump 6 is also connected to positioned at the radiating using the positive metallic circuit only by the dielectric layer 5
1 positive metal ball of substrate.
It should be noted that this is another form of chip, the chip that corresponding form can be made according to being actually needed.
The embodiment of the present application provide the third possess the chip of high radiating fan-out-type encapsulating structure, be it is above-mentioned the first
Or on the basis of second of chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The heat-radiating substrate is copper base or ceramic substrate.
Because the heat conductivility of copper and ceramics is splendid, therefore using the radiating effect meeting of copper base or ceramic substrate to chip
Greatly improve, and by chip directly placed on copper base or ceramic substrate, it is not necessary to custom lead-frame, and can be according to need
Ask and carry out multiple same cake cores, even more than loading in mixture for different model chip, reduce manufacturing cost, improve the production effect of chip
Rate.
The 4th kind of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides, be it is above-mentioned the third
On the basis of the chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The chip body is Nian Jie with the chip slot using Die-Attach glue.
It should be noted that the DA glue (Die-Attach glue) that this preferred scheme uses is chip attachment glue, it is led
It is epoxy resin, silver powder and other additives to want composition, and what is primarily served is adhering chip and substrate, its conductive and heat conductivility
More preferably, so as to further realize the good radiating effect of chip.
The 5th kind of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides, is at above-mentioned 4th kind
On the basis of the chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The thickness range of the heat-radiating substrate is 0.5 millimeter to 5.0 millimeters.
It should be noted that heat-radiating substrate can not be too thick, the stop to heat is thus reduced to greatest extent, can not be too
It is thin, thus guarantee to set chip slot thereon, therefore this scheme is generally preferred to 0.5 millimeter to 5.0 millimeters, takes into account
Radiating and the aspect of processing two.
The 6th kind of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides, is at above-mentioned 5th kind
On the basis of the chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The dielectric layer is ABF layers, bcb layer or PI layers.
Wherein, the ABF layers are laminated plates dielectric resin material, and the bcb layer is benzocyclobutene insulating resin material
Material, the PI layers are polyimide composite insulated material.
The 7th kind of chip for possessing high radiating fan-out-type encapsulating structure that the embodiment of the present application provides, is at above-mentioned 6th kind
On the basis of the chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technical characteristic：
The metallic circuit is copper cash or silver wire.
It should be noted that this copper cash or silver wire have more preferable heat dispersion, thus can be preferably here this two
Kind, the metallic circuit of other kinds of perfect heat-dissipating can also be selected certainly, be not intended to limit herein.
The first of the embodiment of the present application offer possesses preparation method such as Fig. 3 of the chip of high radiating fan-out-type encapsulating structure
Shown, Fig. 3 is the preparation method for the chip that the first that the embodiment of the present application provides possesses high radiating fan-out-type encapsulating structure
Schematic diagram, this method comprise the following steps：
S1：The logical of at least one chip slot and at least one insertion front and back is opened up in the front of heat-radiating substrate
Hole；
Wherein, chip groove depth is the thickness that chip height adds adhesive glue, and the chip slot opened up here can be two
More than, it is decided according to the actual requirements, there can also be various sizes of chip slot simultaneously, adapts to various sizes of chip sheet
Body, to improve producing efficiency, and the through hole is in the surrounding of chip slot, as the metal ball that chip body is connected to the back side
Passage.
S2：Adhering chip body in the chip slot, in the front implantation copper bump of the chip body；
Specifically, being coated in chip slot, DA is viscous and glue, chip body is mounted in chip slot so that chip body
Upper surface and the upper surface flush of heat-radiating substrate.
S3：The front of the chip body and side, the front and back of the heat-radiating substrate and the through-hole wall
Cover dielectric layer；
Specifically, can be in the front covering dielectric layer of chip body, each face all standing of substrate, then filling up Jie with laser
Passed through in the through hole of electric material, form through hole again, and removed the dielectric layer above copper bump with laser, expose copper bump.
S4：Metal seed layer, and plating metal circuit are made in the dielectric layer surface；
Metalized is carried out to the upper and lower surface of substrate first, makes metal seed layer so that subsequently it can be entered
Row plating metal circuit, metal seed layer electroplating surface layer of conductive material (such as copper, silver), and plating is carried out to through hole and filled out
Fill, then needing metallic circuit part up and down to be protected to cover one layer of photoresistance film；Unnecessary copper is etched away, etches away photoresistance film
Outside unprotected metal；Fast-etching metal layer, fast-etching is carried out to substrate surface, removed in addition to metallic circuit
Metal layer；Remove photoresistance film.
S6：Protective layer is set in the outer surface of the metallic circuit, Zhi Qiu areas are reserved at the back side of the heat-radiating substrate
Domain, and utilize the positive and described through hole by the dielectric layer in ball placement region implanted metal ball, the copper bump
Metallic circuit is connected to the metal ball positioned at the heat-radiating substrate back side；
It should be noted that this protective layer can be thermosetting polymer, circuit can be carried out and be effectively protected.
S7：Unnecessary dielectric layer is removed, cuts out one single chip.
Material is thus formed one chip product one by one.
What the embodiment of the present application provided possesses the preparation method of the chip of high radiating fan-out-type encapsulating structure for second, be
On the basis of the preparation method of the first above-mentioned chip for possessing high radiating fan-out-type encapsulating structure, in addition to following technology is special
Sign：
Protective layer is set in the outer surface of the metallic circuit, is reserved at the back side of the heat-radiating substrate and plants ball region,
And utilize the metal of the positive and described through hole by the dielectric layer in ball placement region implanted metal ball, the copper bump
Connection is extremely located at after the metal ball at the heat-radiating substrate back side, in addition to：
Reserved in the front of the heat-radiating substrate and plant ball region, and in ball placement region implanted metal ball, the copper
Copper bump described in salient point is also connected to positioned at the heat-radiating substrate just using the positive metallic circuit only by the dielectric layer
The metal ball in face.
That is, in addition to setting metal ball except the back side in first method embodiment, the embodiment is also just
Face sets metal ball, forms the structure of double-sided metal ball, it is seen that above two embodiment need not all have as prior art
Process is filled out in the upside-down mounting and the later bottom of upside-down mounting for having chip, so as to reduce upside-down mounting contraposition and bottom is filled a vacancy the risk in hole.
The embodiment of the present application provide the third possess high radiating fan-out-type encapsulating structure chip preparation method, be
On the basis of above-mentioned the first or the preparation method for the chip for possessing high radiating fan-out-type encapsulating structure for second, in addition to it is as follows
Technical characteristic：
It is described that the logical of at least one chip slot and at least one insertion front and back is opened up in the front of heat-radiating substrate
Kong Wei：
At least one chip slot and at least one insertion front and back are opened up in the front of copper base or ceramic substrate
Through hole.
Because the heat conductivility of copper and ceramics is splendid, therefore using the radiating effect meeting of copper base or ceramic substrate to chip
Greatly improve, and by chip directly placed on copper base or ceramic substrate, it is not necessary to custom lead-frame, and can be according to need
Ask and carry out multiple same cake cores, even more than loading in mixture for different model chip, reduce manufacturing cost, improve the production effect of chip
Rate.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
- A kind of 1. chip for possessing high radiating fan-out-type encapsulating structure, it is characterised in that including heat-radiating substrate, the heat-radiating substrate Front offer the through hole of at least one chip slot and at least one insertion front and back, be bonded with the chip slot Chip body, the front of the chip body and side, the front and back of the heat-radiating substrate and the through-hole wall are equal Covered with dielectric layer, the chip body is positively connected with copper bump, and the copper bump is utilized by the dielectric layer just The metallic circuit of face and the through hole is connected to the metal ball positioned at the heat-radiating substrate back side, the outer surface of the metallic circuit Protective layer is provided with addition to the position of the metal ball.
- 2. the chip according to claim 1 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that the copper bump Also it is connected to using the positive metallic circuit only by the dielectric layer positioned at the positive metal ball of the heat-radiating substrate.
- 3. the chip for possessing high radiating fan-out-type encapsulating structure according to claim any one of 1-2, it is characterised in that institute It is copper base or ceramic substrate to state heat-radiating substrate.
- 4. the chip according to claim 3 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that the chip sheet Body is Nian Jie with the chip slot using Die-Attach glue.
- 5. the chip according to claim 4 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that the radiating base The thickness range of plate is 0.5 millimeter to 5.0 millimeters.
- 6. the chip according to claim 5 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that the dielectric layer For ABF layers, bcb layer or PI layers.
- 7. the chip according to claim 6 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that the metal wire Road is copper cash or silver wire.
- A kind of 8. preparation method for the chip for possessing high radiating fan-out-type encapsulating structure, it is characterised in that including：The through hole of at least one chip slot and at least one insertion front and back is opened up in the front of heat-radiating substrate；Adhering chip body in the chip slot, in the front implantation copper bump of the chip body；The front of the chip body and side, the front and back of the heat-radiating substrate and the through-hole wall cover Jie Electric layer；Metal seed layer, and plating metal circuit are made in the dielectric layer surface；The metallic circuit need parts to be protected cover photoresistance film, etch away be not required to area to be protected metallic circuit and Metal seed layer, and remove the photoresistance film；Protective layer is set in the outer surface of the metallic circuit, is reserved at the back side of the heat-radiating substrate and plants ball region, and Ball placement region implanted metal ball, the copper bump utilize the metallic circuit of the positive and described through hole by the dielectric layer It is connected to the metal ball positioned at the heat-radiating substrate back side；Unnecessary dielectric layer is removed, cuts out one single chip.
- 9. the preparation method of the chip according to claim 8 for possessing high radiating fan-out-type encapsulating structure, it is characterised in that Protective layer is set in the outer surface of the metallic circuit, is reserved at the back side of the heat-radiating substrate and plants ball region, and described Ball region implanted metal ball is planted, the copper bump utilizes to be connected by the positive metallic circuit with the through hole of the dielectric layer To after being located at the metal ball at the heat-radiating substrate back side, in addition to：Reserved in the front of the heat-radiating substrate and plant ball region, and in ball placement region implanted metal ball, the copper bump The copper bump is also connected to positive positioned at the heat-radiating substrate using only by the positive metallic circuit of the dielectric layer Metal ball.
- 10. the preparation method of the chip for possessing high radiating fan-out-type encapsulating structure according to claim any one of 8-9, its It is characterised by, it is described that the logical of at least one chip slot and at least one insertion front and back is opened up in the front of heat-radiating substrate Kong Wei：The logical of at least one chip slot and at least one insertion front and back is opened up in the front of copper base or ceramic substrate Hole.
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| CN110534435A (en) * | 2019-08-01 | 2019-12-03 | 广东佛智芯微电子技术研究有限公司 | The packaging method of the heterogeneous integrated fan-out package structure of 3-D multi-chip |
| CN110931477A (en) * | 2019-11-28 | 2020-03-27 | 徐州顺意半导体科技有限公司 | Intelligent power module and preparation method thereof |
| CN111312697A (en) * | 2020-02-28 | 2020-06-19 | 西安微电子技术研究所 | Three-dimensional stacking integrated structure, multi-chip integrated structure and preparation method thereof |
| CN113785393A (en) * | 2021-07-28 | 2021-12-10 | 广东省科学院半导体研究所 | Fan-out package and manufacturing method thereof |
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