CN110931477B - Intelligent power module and preparation method thereof - Google Patents
Intelligent power module and preparation method thereof Download PDFInfo
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- CN110931477B CN110931477B CN201911194908.XA CN201911194908A CN110931477B CN 110931477 B CN110931477 B CN 110931477B CN 201911194908 A CN201911194908 A CN 201911194908A CN 110931477 B CN110931477 B CN 110931477B
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- 238000009413 insulation Methods 0.000 claims abstract description 67
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- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000017525 heat dissipation Effects 0.000 claims abstract description 21
- 238000000465 moulding Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 13
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- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
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- 238000000034 method Methods 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
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- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to an intelligent power module and a preparation method thereof, wherein the intelligent power module comprises a plurality of first grooves and a plurality of second grooves which are respectively formed on the first surface and the second surface of a metal substrate, a plurality of through holes which penetrate through the metal substrate are formed, a power element is arranged in each of the first grooves and the second grooves, a conductive through hole is formed in each through hole, then a first heat dissipation type insulating dielectric layer and a first wiring layer are formed on the second surface of the metal substrate, a first heat insulation layer, a second heat dissipation type insulating dielectric layer, a third heat insulation layer and a fourth heat insulation layer are formed on the first surface of the metal substrate, a second wiring layer is formed on the fourth heat resistance insulating layer in a deposition manner, a conductive column is formed on the second wiring layer, and a plurality of control elements are arranged on the second wiring layer, so that the control elements are electrically connected with the power elements, the conductive post is higher than the control element, and a molding layer exposes the top surface of the conductive post.
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to an intelligent power module and a preparation method thereof.
Background
With the development of electronic technology, power semiconductor technology has become the core of modern power electronic technology. Power devices, represented by Insulated Gate Bipolar Transistors (IGBTs), are increasingly used in a wide variety of industrial control applications. The IGBT as a typical bipolar MOS composite power device integrates the advantages of the MOSFET and the GTR (high-power transistor), has the advantages of high input impedance, high switching speed, good thermal stability and simple driving circuit, and has the advantages of low on-state voltage, high voltage resistance and large borne current. The intelligent power module is based on the IGBT, and is internally integrated with a logic, control, detection and protection circuit, compared with the common IGBT, the intelligent power module has the advantages that the system performance and the reliability are greatly improved, and meanwhile, because the IPM is low in on-state loss and switching loss, the size of a radiator is reduced, so that the size of the whole system is greatly reduced, the intelligent power module is suitable for the development direction of power devices, and the application field is wider and wider. However, in the use of the existing intelligent power module, the heat dissipation problem has been the subject for the purpose of serving as the solution.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an intelligent power module and a preparation method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that:
a preparation method of an intelligent power module comprises the following steps:
1) providing a metal substrate, wherein the metal substrate is provided with a first surface and a second surface which correspond to each other;
2) forming a plurality of first grooves on the first surface of the metal substrate, forming a plurality of second grooves on the second surface of the metal substrate, and forming a plurality of through holes penetrating through the metal substrate;
3) then, arranging a power element in each first groove and each second groove, wherein the power element is provided with a welding pad;
4) then filling inorganic heat-conducting insulating materials in gaps between the first and second grooves and the power element;
5) forming an insulating dielectric layer on the inner wall of the through hole, depositing a metal conductive material in the through hole to form a conductive through hole, forming a first heat dissipation type insulating dielectric layer on the second surface of the metal substrate, wherein the first heat dissipation type insulating dielectric layer exposes the conductive through hole and a welding pad of the power element, and forming a first wiring layer on the first heat dissipation type insulating dielectric layer, wherein the first wiring layer is electrically connected with the conductive through hole and the power element in the second groove;
6) forming a first thermal insulation layer on the first surface of the metal substrate, forming a second thermal insulation layer on the first thermal insulation layer, disposing a third thermal insulation layer on the second thermal insulation layer, and disposing a fourth thermal insulation layer on the third thermal insulation layer, wherein the thermal conductivity of each of the first, second, third, and fourth thermal insulation layers decreases in sequence;
7) etching to expose the conductive through holes and concave holes of the welding pads of the power element, depositing a conductive metal material in each concave hole to form a conductive structure, and depositing a second wiring layer on the fourth heat-resistant insulating layer, wherein the second wiring layer is electrically connected with the conductive structure;
8) then forming a conductive pillar on the second wiring layer, and disposing a plurality of control elements on the second wiring layer such that the control elements are electrically connected with the power elements, the conductive pillar being higher than the control elements;
9) then, a molding layer is formed, and the molding layer is thinned to expose the top surfaces of the conductive posts.
Preferably, in the step 1), the metal substrate is made of aluminum or copper; in the step 2), the method for forming the first groove, the second groove and the through hole is laser ablation, cutting or wet etching.
Preferably, in the step 3), the power element is disposed in the first groove or the second groove by an adhesive material; in the step 4), the inorganic heat-conducting insulating material is one of aluminum oxide, magnesium oxide, zinc oxide, aluminum nitride, boron nitride and silicon carbide.
Preferably, in the step 5), the insulating dielectric layer is made of silicon nitride or silicon oxide, the conductive via and the first wiring layer are made of one of copper, aluminum and silver, and the first heat dissipation type insulating dielectric layer is made of one of aluminum oxide, aluminum nitride, silicon carbide and boron nitride.
Preferably, in the step 6), the first heat insulation layer is made of silicon oxide or silicon nitride, the first heat insulation layer is 5-15 micrometers thick, the second heat insulation layer is made of glass, epoxy resin or HDPE, the second heat insulation layer is 30-60 micrometers thick, the third heat insulation layer is made of pure silica gel, ABS, PA, PU or LDPE, the third heat insulation layer is 50-100 micrometers thick, the fourth heat insulation layer is made of low-density silica gel, PVC or PS, and the fourth heat insulation layer is 80-150 micrometers thick.
Preferably, in the step 7), the conductive structure and the second wiring layer are made of one of copper, aluminum and silver, and the conductive structure and the second wiring layer are formed by one of thermal evaporation, sputtering, e-beam evaporation and chemical deposition.
Preferably, in the step 8), the conductive pillar is made of a copper pillar, an aluminum pillar, or a solder pillar, and the plurality of control elements are disposed on the second wiring layer by a wire bonding process or a flip-chip process.
Preferably, in the step 9), the material of the molding layer is epoxy resin.
The invention also provides an intelligent power module which is prepared by adopting the method.
Compared with the prior art, the invention has the following advantages:
in the preparation method of the intelligent power module, a plurality of first grooves are formed on the first surface of the metal substrate, a plurality of second grooves are formed on the second surface of the metal substrate, a power element is arranged in each first groove and each second groove, and an inorganic heat-conducting insulating material is filled in gaps among the first grooves, the second grooves and the power elements. The first, second, third and fourth heat insulation layers are formed on the first surface of the metal substrate, wherein the heat conductivity coefficients of the first, second, third and fourth heat insulation layers are sequentially reduced, and the heat generated by the power element can be effectively prevented from being transferred upwards by adjusting the material and the heat conductivity coefficient of each heat insulation layer, so that the heat generated by the power element can be effectively prevented from influencing the working temperature of the control element. And then depositing a metal conductive material in the through hole to form a conductive through hole, forming a conductive column on the second wiring layer, and forming a first wiring layer on the first heat dissipation type insulating dielectric layer, wherein the first wiring layer is electrically connected with the conductive through hole and the power element in the second groove.
Drawings
Fig. 1 is a schematic structural diagram of an intelligent power module according to the present invention.
Detailed Description
A preparation method of an intelligent power module comprises the following steps:
1) providing a metal substrate, wherein the metal substrate is provided with a first surface and a second surface which correspond to each other, and the metal substrate is made of aluminum or copper;
2) then forming a plurality of first grooves on the first surface of the metal substrate, forming a plurality of second grooves on the second surface of the metal substrate, and forming a plurality of through holes penetrating through the metal substrate, wherein the first grooves, the second grooves and the through holes are formed by laser ablation, cutting or wet etching, and the size of the grooves is adapted to the size of a power element to be bonded subsequently;
3) then, each first groove and each second groove are respectively provided with a power element, each power element is provided with a welding pad, each power element is arranged in the corresponding first groove or the corresponding second groove through a bonding material, the heat dissipation capacity of each power element is large, and the stable work of the intelligent power module can be ensured only by fast heat dissipation;
4) then filling inorganic heat-conducting and insulating materials in gaps between the first and second grooves and the power element, wherein the inorganic heat-conducting and insulating materials are one of aluminum oxide, magnesium oxide, zinc oxide, aluminum nitride, boron nitride and silicon carbide, and the arrangement of the structure is convenient for the power element to quickly diffuse heat generated by the power element;
5) forming an insulating dielectric layer on the inner wall of the through hole, depositing a metal conductive material in the through hole to form a conductive through hole, forming a first heat dissipation type insulating dielectric layer on the second surface of the metal substrate, wherein the first heat dissipation type insulating dielectric layer exposes the conductive through hole and a welding pad of the power element, forming a first wiring layer on the first heat dissipation type insulating dielectric layer, the first wiring layer is electrically connected with the conductive through hole and the power element in the second groove, the insulating dielectric layer is made of silicon nitride or silicon oxide, the conductive through hole and the first wiring layer are made of one of copper, aluminum and silver, and the first heat dissipation type insulating dielectric layer is made of one of aluminum oxide, aluminum nitride, silicon carbide and boron nitride;
6) then forming a first heat insulation layer on the first surface of the metal substrate, then forming a second heat insulation layer on the first heat insulation layer, then arranging a third heat insulation layer on the second heat insulation layer, and then arranging a fourth heat insulation layer on the third heat insulation layer, wherein the respective thermal conductivity coefficients of the first, second, third and fourth heat insulation layers are sequentially reduced, the first heat insulation layer is made of silicon oxide or silicon nitride, the first heat insulation layer is 5-15 micrometers thick, the second heat insulation layer is made of glass, epoxy resin or HDPE, the second heat insulation layer is 30-60 micrometers thick, the third heat insulation layer is made of pure silica gel, ABS, PA, PU or LDPE, the third heat insulation layer is 50-100 micrometers thick, the fourth heat insulation layer is made of low-density silica gel, PVC or PS, and the fourth heat insulation layer is 80-150 micrometers thick, the first, second, third and fourth heat insulation layers can prevent the power element from transferring the heat generated by the power element upwards;
7) etching to expose the conductive through holes and concave holes of the welding pads of the power element, depositing a conductive metal material in each concave hole to form a conductive structure, and depositing a second wiring layer on the fourth heat-resistant insulating layer, wherein the second wiring layer is electrically connected with the conductive structure, the conductive structure and the second wiring layer are made of one of copper, aluminum and silver, and the conductive structure and the second wiring layer are formed by one of thermal evaporation, sputtering, electron beam evaporation and chemical deposition;
8) forming a conductive pillar on the second wiring layer, and arranging a plurality of control elements on the second wiring layer so that the control elements are electrically connected with the power elements, wherein the conductive pillar is higher than the control elements, the conductive pillar is made of a copper pillar, an aluminum pillar or a solder pillar, and the control elements are arranged on the second wiring layer through a wire bonding process or a flip-chip process, so that the control elements can be conveniently operated at a low temperature;
9) and then forming a molding layer, and thinning the molding layer to expose the top surfaces of the conductive posts, wherein the material of the molding layer is epoxy resin.
The invention also provides an intelligent power module which is prepared by adopting the method. As shown in fig. 1, the smart power module includes a metal substrate 1, the metal substrate 1 having a first surface and a second surface, a plurality of first grooves 11 formed on the first surface of the metal substrate 1, a plurality of second grooves 12 formed on the second surface of the metal substrate 1, and a plurality of through holes 13 penetrating through the metal substrate 1, a power device 2 disposed in each of the first grooves 11 and the second grooves 12, the power device 2 having a pad, an inorganic heat-conducting insulating material filled in a gap between the first and second grooves 11, 12 and the power device 2, an insulating dielectric layer 31 formed on an inner wall of the through hole 13, a metal conductive material deposited in the through hole 13 to form a conductive through hole 32, and a first heat-dissipation insulating dielectric layer 14 formed on the second surface of the metal substrate 1, forming a first wiring layer 4 on the first heat dissipation type insulating dielectric layer 14, the first wiring layer 4 being electrically connected to the conductive via 32 and the power element 2 in the second groove 12, forming a first thermal insulation layer 51 on the first surface of the metal base 1, then forming a second thermal insulation layer 52 on the first thermal insulation layer 51, then providing a third thermal insulation layer 53 on the second thermal insulation layer 52, then providing a fourth thermal insulation layer 54 on the third thermal insulation layer 53, then exposing recesses of the conductive via and the pad of the power element by etching, then depositing a conductive metal material in each of the recesses to form a conductive structure 6, then depositing a second wiring layer 7 on the fourth thermal insulation layer 54, the second wiring layer 7 being electrically connected to the conductive structure 6, forming a conductive pillar 8 on the second wiring layer 7, and disposing a plurality of control elements 9 on the second wiring layer 7, so that the control elements 9 are electrically connected to the power element 2, the conductive pillars 8 are higher than the control elements 9, forming a molding layer 10, and thinning the molding layer 10 to expose top surfaces of the conductive pillars 8.
As described above, the present invention has the following advantages over the prior art:
in the preparation method of the intelligent power module, a plurality of first grooves are formed on the first surface of the metal substrate, a plurality of second grooves are formed on the second surface of the metal substrate, a power element is arranged in each first groove and each second groove, and an inorganic heat-conducting insulating material is filled in gaps among the first grooves, the second grooves and the power elements. The first, second, third and fourth heat insulation layers are formed on the first surface of the metal substrate, wherein the heat conductivity coefficients of the first, second, third and fourth heat insulation layers are sequentially reduced, and the heat generated by the power element can be effectively prevented from being transferred upwards by adjusting the material and the heat conductivity coefficient of each heat insulation layer, so that the heat generated by the power element can be effectively prevented from influencing the working temperature of the control element. And then depositing a metal conductive material in the through hole to form a conductive through hole, forming a conductive column on the second wiring layer, and forming a first wiring layer on the first heat dissipation type insulating dielectric layer, wherein the first wiring layer is electrically connected with the conductive through hole and the power element in the second groove.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A preparation method of an intelligent power module is characterized by comprising the following steps: the method comprises the following steps:
1) providing a metal substrate, wherein the metal substrate is provided with a first surface and a second surface which correspond to each other;
2) forming a plurality of first grooves on the first surface of the metal substrate, forming a plurality of second grooves on the second surface of the metal substrate, and forming a plurality of through holes penetrating through the metal substrate;
3) then, arranging a power element in each first groove and each second groove, wherein the power element is provided with a welding pad;
4) then filling inorganic heat-conducting insulating materials in gaps between the first and second grooves and the power element;
5) forming an insulating dielectric layer on the inner wall of the through hole, depositing a metal conductive material in the through hole to form a conductive through hole, forming a first heat dissipation type insulating dielectric layer on the second surface of the metal substrate, wherein the first heat dissipation type insulating dielectric layer exposes the conductive through hole and a welding pad of the power element, and forming a first wiring layer on the first heat dissipation type insulating dielectric layer, wherein the first wiring layer is electrically connected with the conductive through hole and the power element in the second groove;
6) forming a first thermal insulation layer on the first surface of the metal substrate, forming a second thermal insulation layer on the first thermal insulation layer, disposing a third thermal insulation layer on the second thermal insulation layer, and disposing a fourth thermal insulation layer on the third thermal insulation layer, wherein the thermal conductivity of each of the first, second, third, and fourth thermal insulation layers decreases in sequence;
7) etching to expose the conductive through holes and concave holes of the welding pads of the power element, depositing a conductive metal material in each concave hole to form a conductive structure, and depositing a second wiring layer on the fourth heat insulation layer, wherein the second wiring layer is electrically connected with the conductive structure;
8) then forming a conductive pillar on the second wiring layer, and disposing a plurality of control elements on the second wiring layer such that the control elements are electrically connected with the power elements, the conductive pillar being higher than the control elements;
9) then, a molding layer is formed, and the molding layer is thinned to expose the top surfaces of the conductive posts.
2. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 1), the metal substrate is made of aluminum or copper; in the step 2), the method for forming the first groove, the second groove and the through hole is laser ablation, cutting or wet etching.
3. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 3), the power element is arranged in the first groove or the second groove through an adhesive material; in the step 4), the inorganic heat-conducting insulating material is one of aluminum oxide, magnesium oxide, zinc oxide, aluminum nitride, boron nitride and silicon carbide.
4. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 5), the insulating dielectric layer is made of silicon nitride or silicon oxide, the conductive through hole and the first wiring layer are made of one of copper, aluminum and silver, and the first heat dissipation type insulating dielectric layer is made of one of aluminum oxide, aluminum nitride, silicon carbide and boron nitride.
5. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 6), the first heat insulation layer is made of silicon oxide or silicon nitride, the thickness of the first heat insulation layer is 5-15 micrometers, the second heat insulation layer is made of glass, epoxy resin or HDPE, the thickness of the second heat insulation layer is 30-60 micrometers, the third heat insulation layer is made of pure silica gel, ABS, PA, PU or LDPE, the thickness of the third heat insulation layer is 50-100 micrometers, the fourth heat insulation layer is made of low-density silica gel, PVC or PS, and the thickness of the fourth heat insulation layer is 80-150 micrometers.
6. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 7), the conductive structure and the second wiring layer are made of one of copper, aluminum and silver, and the conductive structure and the second wiring layer are formed by one of thermal evaporation, sputtering, e-beam evaporation and chemical deposition.
7. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 8), the conductive pillar is made of a copper pillar, an aluminum pillar, or a solder pillar, and the plurality of control elements are disposed on the second wiring layer through a wire bonding process or a flip-chip process.
8. The method of manufacturing an intelligent power module according to claim 1, wherein: in the step 9), the material of the molding layer is epoxy resin.
9. A smart power module formed by the method of any one of claims 1-8.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102002346A (en) * | 2010-10-15 | 2011-04-06 | 深圳市安品有机硅材料有限公司 | Organic silicon heat conduction composition and organic silicon heat conduction patch |
| CN105575913A (en) * | 2016-02-23 | 2016-05-11 | 华天科技（昆山）电子有限公司 | Fan-out type 3D packaging structure embedded in silicon substrate |
| CN106129015A (en) * | 2016-07-11 | 2016-11-16 | 华天科技（昆山）电子有限公司 | A kind of encapsulating structure containing embedment chip and flip-chip interconnection and preparation method thereof |
| CN107564872A (en) * | 2017-08-25 | 2018-01-09 | 广东工业大学 | A kind of chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256429A (en) * | 1997-03-07 | 1998-09-25 | Toshiba Corp | Semiconductor package |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102002346A (en) * | 2010-10-15 | 2011-04-06 | 深圳市安品有机硅材料有限公司 | Organic silicon heat conduction composition and organic silicon heat conduction patch |
| CN105575913A (en) * | 2016-02-23 | 2016-05-11 | 华天科技（昆山）电子有限公司 | Fan-out type 3D packaging structure embedded in silicon substrate |
| CN106129015A (en) * | 2016-07-11 | 2016-11-16 | 华天科技（昆山）电子有限公司 | A kind of encapsulating structure containing embedment chip and flip-chip interconnection and preparation method thereof |
| CN107564872A (en) * | 2017-08-25 | 2018-01-09 | 广东工业大学 | A kind of chip for possessing high radiating fan-out-type encapsulating structure and preparation method thereof |
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