CN109904124A - QFN encapsulating structure with anti-short-circuit function - Google Patents

QFN encapsulating structure with anti-short-circuit function Download PDF

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Publication number
CN109904124A
CN109904124A CN201910166939.8A CN201910166939A CN109904124A CN 109904124 A CN109904124 A CN 109904124A CN 201910166939 A CN201910166939 A CN 201910166939A CN 109904124 A CN109904124 A CN 109904124A
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China
Prior art keywords
parts
short
heat dissipation
bonding pad
circuit function
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CN201910166939.8A
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CN109904124B (en
Inventor
马磊
党鹏
杨光
彭小虎
王新刚
庞朋涛
任斌
王妙妙
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Xi'an Hangsi Semiconductor Co Ltd
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Xi'an Hangsi Semiconductor Co Ltd
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Priority to CN201910166939.8A priority Critical patent/CN109904124B/en
Priority to CN202110621536.5A priority patent/CN113451228B/en
Priority to CN202110620907.8A priority patent/CN113451226B/en
Priority to CN202110620908.2A priority patent/CN113451235B/en
Priority to CN202110620909.7A priority patent/CN113451227B/en
Publication of CN109904124A publication Critical patent/CN109904124A/en
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Publication of CN109904124B publication Critical patent/CN109904124B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The invention discloses a kind of QFN encapsulating structures with anti-short-circuit function, including heat dissipation bonding pad, chip and the conductive welding disk being located in epoxy insulator, the chip is located on heat dissipation bonding pad, and silver slurry layer is equipped between the chip and heat dissipation bonding pad, it is located at heat dissipation bonding pad periphery and is equipped with several conductive welding disks；The raw material of its epoxy insulator includes following parts by weight of component: the fluoro- 2- aminoanisole of 80 ~ 100 parts of epoxy resin, linear phenol-aldehyde resin, liquid nitrile rubber, methyl diphenylene diisocyanate, pyrocarbonic acid diethyl ester, phosphate dibenzyl ester, silicon powder, γ-methacryloxypropyl trimethoxy silane, 5-, 2,4,6- tri- (dimethylamino methyl) phenol, release agent, fire retardant.QFN encapsulating structure of the present invention has good anti-short-circuit function, and the good stable structure of overall mechanical properties, has very high reliability.

Description

QFN encapsulating structure with anti-short-circuit function
Technical field
The invention belongs to leadless packages technical field more particularly to a kind of QFN encapsulating structures with anti-short-circuit function.
Background technique
QFN is encapsulated in pcb board using very extensively, and the application of QFN encapsulation has greatly pushed the development of electronic technology.QFN Encapsulation has excellent hot property, and being primarily due to package bottom has large area heatsink welding, in order to effectively by heat from core Piece is transmitted on PCB, and the bottom PCB must design corresponding heat dissipation bonding pad and dissipating vias, and heat dissipation bonding pad provides Reliable bonding area, dissipating vias provide sinking path.
The design of conventional QFN encapsulation in the pcb usually has the heat dissipation bonding pad of a large area, this heat dissipation bonding pad is usual Ground connection, although this heat dissipation bonding pad can play the role of chip cooling, often due to pad is excessive, in patch (SMT) mistake Brush tin excessively will lead to the short circuit phenomenon of this QFN encapsulation center big heat dissipation bonding pad and other small conductive welding disks in journey. In addition, as integrated antenna package is towards densification, highly integrated, high speed direction continuous development, encapsulating structure also face Face receiving chip to generate heat and a series of security risks of bring.Therefore, how to develop a kind of with the resistance to of anti-short-circuit function Heat-sealing assembling structure has great importance for the development of high performance electronics.
Summary of the invention
It is an object of that present invention to provide a kind of QFN encapsulating structure with anti-short-circuit function, which has good Anti- short-circuit function, and the good stable structure of overall mechanical properties has very high reliability.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: a kind of QFN with anti-short-circuit function encapsulates knot Structure, including heat dissipation bonding pad, chip and the conductive welding disk being located in epoxy insulator, the chip is located on heat dissipation bonding pad, and institute It states and is equipped with silver slurry layer between chip and heat dissipation bonding pad, be located at heat dissipation bonding pad periphery and be equipped with several conductive welding disks, the conductive weldering Disk is connected with chip by a lead；
The heat dissipation bonding pad is provided with separation trough far from the side of chip, and the separation groove width is 0.1 ~ 0.3mm, the separation trough Heat dissipation bonding pad is separated to form at least 2 pieces of pad monomers far from the side equal part of chip, is filled in the separation trough thermally conductive exhausted Edge strip, several T-slots extended in heat dissipation bonding pad are provided in the separation groove groove wall, and the heat conductive insulating item is equipped with and fills out Fill the T shape portion in T-slot；
The raw material of the epoxy insulator includes following parts by weight of component:
80 ~ 100 parts of epoxy resin,
45 ~ 60 parts of linear phenol-aldehyde resin,
15 ~ 20 parts of liquid nitrile rubber,
6 ~ 10 parts of methyl diphenylene diisocyanate,
3 ~ 8 parts of pyrocarbonic acid diethyl ester,
2 ~ 6.5 parts of phosphate dibenzyl ester,
60 ~ 90 parts of silicon powder,
3 ~ 8 parts of γ-methacryloxypropyl trimethoxy silane,
0.3 ~ 2 part of the fluoro- 2- aminoanisole of 5-,
2,4,6- tri- 0.5 ~ 4 part of (dimethylamino methyl) phenol,
2 ~ 5 parts of release agent,
10 ~ 25 parts of fire retardant.
Further improved technical solution is as follows in above-mentioned technical proposal:
1. in above scheme, the release agent is selected from least one of stearic acid, stearate or oxidized polyethylene wax.
2. in above scheme, the fire retardant is borate and/or molybdate.
3. in above scheme, the silicon powder is melting silicon powder.
4. in above scheme, the silicon powder D50 is 4 ~ 8 μm, the silicon powder D100 is 10 ~ 25 μm.
5. in above scheme, the heat conductive insulating thickness, which is less than, separates groove deep.
6. in above scheme, the area of the pad monomer is not less than 0.3*0.3mm2。
7. in above scheme, the spacing of the conductive welding disk and heat dissipation bonding pad is 0.3mm.
8. in above scheme, the conductive welding disk is T-block.
Due to the application of the above technical scheme, compared with the prior art, the invention has the following advantages:
1. the present invention has the QFN encapsulating structure of anti-short-circuit function, epoxy insulator formula is added in epoxy-resin systems 15 ~ 20 parts of liquid nitrile rubber, it is used as curing accelerator using 0.5 ~ 4 part of 2,4,6- tri- (dimethylamino methyl) phenol, and It is additionally added to 0.3 ~ 2 part of 3 ~ 8 parts of pyrocarbonic acid diethyl ester and the fluoro- 2- aminoanisole of 5-, improves the crosslink density of solidfied material, To enhance the overall mechanical properties of epoxy insulator, encapsulating structure stability has been effectively ensured.
2. the present invention has the QFN encapsulating structure of anti-short-circuit function, epoxy insulator formula is in epoxy resin 80 ~ 100 Part, on the basis of 45 ~ 60 parts of linear phenol-aldehyde resin and 15 ~ 20 parts of liquid nitrile rubber, and be added to two isocyanide of diphenyl methane 6 ~ 10 parts of acid esters and 2 ~ 6.5 parts of phosphate dibenzyl ester, resin obtained is under the premise of guaranteeing excellent mechanical performances, with excellent Elegant heat resistance, glass transition temperature can meet the requirement of high-power high fever chip package up to 190 ~ 230 DEG C.
3, the present invention has the QFN encapsulating structure of anti-short-circuit function, opens on the heat dissipation bonding pad surface far from chip-side If separation trough, heat dissipation bonding pad is divided into far from a part of equal part of chip by least two pieces of pads by separation trough of different shapes Monomer, after being divided into multiple pad monomers, pad monomer is less than former heat dissipation bonding pad far from core far from the surface area of chip-side The surface area of piece side to reduce the usage amount of tin cream, and then effectively controls the short circuit between heat dissipation bonding pad and conductive welding disk Phenomenon；Meanwhile after being filled with upper heat conductive insulating item in separation trough, it is poor that separation slot part will not fill heat-conducting effect Epoxy insulation resin, the heat sinking function to guarantee heat dissipation bonding pad part is unaffected, and with the reduction of tin cream usage amount, moreover it is possible to Reduce patch cost；In addition, heat conductive insulating item, when being filled into separation trough by way of injection molding, part resin is able to enter In T-slot, the at T-shaped portion of shape is avoided to stabilize heat conductive insulating position using the clamping of T shape portion and T-slot due to injection molding Quality problems or external force cause heat conductive insulating item to be detached from separation trough and influence its use.
Detailed description of the invention
Fig. 1 is the QFN package structure diagram that the present invention has anti-short-circuit function；
Fig. 2 is the enlarged drawing of part A in Fig. 1.
In the figures above: 1, heat dissipation bonding pad；11, separation trough；111, T-slot；12, heat conductive insulating item；121, T shape portion；13, Pad monomer；2, silver slurry layer；3, chip；4, conductive welding disk；5, lead；6, epoxy insulator.
Specific embodiment
The present invention will be further described below with reference to examples:
Embodiment 1 ~ 4: a kind of QFN encapsulating structure with anti-short-circuit function, including the heat dissipation bonding pad being located in epoxy insulator 6 1, chip 3 and conductive welding disk 4, the chip 3 are located on heat dissipation bonding pad 1, and silver is equipped between the chip 3 and heat dissipation bonding pad 1 Pulp layer 2 is located at 1 periphery of heat dissipation bonding pad equipped with several conductive welding disks 4, the conductive welding disk 4 and chip 3 and passes through a lead 5 company It connects；
The heat dissipation bonding pad 1 is provided with separation trough 11 far from the side of chip 3, and 11 width of separation trough is 0.1 ~ 0.3mm, described Heat dissipation bonding pad 1 is separated to form at least 2 pieces of pad monomers 13, the separation trough 11 far from the side equal part of chip 3 by separation trough 11 In be filled with heat conductive insulating item 12, be provided with several T-slots 111 extended in heat dissipation bonding pad 1 on 11 cell wall of separation trough, The heat conductive insulating item 12 is equipped with the T shape portion 121 being filled in T-slot 111；
Above-mentioned 12 thickness of heat conductive insulating item is less than 11 groove depth of separation trough；
The area of above-mentioned pad monomer 13 is not less than 0.3*0.3mm2；
The spacing of above-mentioned conductive welding disk 4 and heat dissipation bonding pad 1 is 0.3mm；
Above-mentioned conductive welding disk 4 is T-block.
The raw material of above-mentioned epoxy insulator 6 includes following parts by weight of component:
Table 1
Component Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4
Epoxy resin 80 85 90 100
Linear phenol-aldehyde resin 50 60 45 55
Liquid nitrile rubber 20 15 16 18
Methyl diphenylene diisocyanate 6 8 9 10
Pyrocarbonic acid diethyl ester 7 3 5 8
Phosphate dibenzyl ester 6.5 3 5 2
Silicon powder 60 90 80 70
γ-methacryloxypropyl trimethoxy silane 6 4 3 8
The fluoro- 2- aminoanisole of 5- 0.3 1.5 2 1
2,4,6- tri- (dimethylamino methyl) phenol 4 3 1.5 0.5
Release agent 3 4 2 5
Fire retardant 25 20 15 10
Above-mentioned silicon powder is melting silicon powder, and above-mentioned silicon powder D50 is 4 ~ 8 μm, and above-mentioned silicon powder D100 is 10 ~ 25 μm.
Release agent in embodiment 1 is stearic acid, and fire retardant is borate；Release agent in embodiment 2 is stearate, Fire retardant is borate；Release agent in embodiment 3 is oxidized polyethylene wax, and fire retardant is molybdate；Demoulding in embodiment 4 Agent is the mixture of stearic acid and oxidized polyethylene wax, and fire retardant is molybdate.
The method for preparing raw material of above-mentioned epoxy insulator 6 the following steps are included:
S1. first by 10 ~ 25 parts of 60 ~ 90 parts of silicon powder and fire retardant and γ-methacryloxypropyl trimethoxy silane 3 ~ 8 parts are uniformly mixed, and are surface-treated；
S2. 80 ~ 100 parts of epoxy resin, 45 ~ 60 parts of linear phenol-aldehyde resin, 15 ~ 20 parts of liquid nitrile rubber, diphenyl are added 6 ~ 10 parts of methane diisocyanate, 3 ~ 8 parts of pyrocarbonic acid diethyl ester, 2 ~ 6.5 parts of phosphate dibenzyl ester, the fluoro- 2- aminoanisole 0.3 of 5- ~ 2 parts, 2,4,6- tri- 0.5 ~ 4 part of (dimethylamino methyl) phenol and 2 ~ 5 parts of release agent are uniformly mixed；
S3. mixture is kneaded 3 ~ 5 minutes in 90 ~ 110 DEG C, is pulverized and sieved after product is cooling.
Comparative example 1 ~ 3: a kind of epoxy insulator, raw material include following parts by weight of component:
Table 2
Component Comparative example 1 Comparative example 2 Comparative example 3
Epoxy resin 90 80 100
Linear phenol-aldehyde resin 60 45 55
Liquid nitrile rubber 20 5 16
Methyl diphenylene diisocyanate 2 6 3
Pyrocarbonic acid diethyl ester 8 3 -
Phosphate dibenzyl ester 6.5 - -
Silicon powder 60 90 80
γ-methacryloxypropyl trimethoxy silane 5 3 8
The fluoro- 2- aminoanisole of 5- - 1.5 2
2,4,6- tri- (dimethylamino methyl) phenol 4 0.5 2
Release agent 4 2 5
Release agent 25 10 15
Above-mentioned silicon powder is melting silicon powder, and above-mentioned silicon powder D50 is 4 ~ 8 μm, and above-mentioned silicon powder D100 is 10 ~ 25 μm.
Release agent in comparative example 1 is stearic acid, and fire retardant is borate；Release agent in comparative example 2 is stearate, Fire retardant is borate；Release agent in comparative example 3 is oxidized polyethylene wax, and fire retardant is molybdate.
The same embodiment of process of preparing.
The performance of epoxy insulator made from above-described embodiment 1 ~ 4 and comparative example 1 ~ 3 is as shown in table 3:
Table 3
In each embodiment and comparative example, the condition of molding of epoxy insulator is equal are as follows: and 180 DEG C of mold temperature, injection pressure 700kg/ cm2, curing time 2min.
As shown in the evaluation result of table 3, epoxy insulator either overall mechanical properties in each embodiment or heat-resisting Performance is superior to each comparative example, for that can guarantee encapsulating structure stability in QFN encapsulating structure, and can satisfy high-power height The requirement of euthermic chip encapsulation.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.

Claims (9)

1. a kind of QFN encapsulating structure with anti-short-circuit function, it is characterised in that: including being located at dissipating in epoxy insulator (6) Hot weld disk (1), chip (3) and conductive welding disk (4), the chip (3) are located on heat dissipation bonding pad (1), and the chip (3) and dissipate Silver slurry layer (2) are equipped between hot weld disk (1), is located at heat dissipation bonding pad (1) periphery and is equipped with several conductive welding disks (4), the conduction Pad (4) and chip (3) are connected by a lead (5)；
The heat dissipation bonding pad (1) is provided with separation trough (11) far from the side of chip (3), and separation trough (11) width is 0.1 ~ Heat dissipation bonding pad (1) is separated to form at least 2 pieces of pad monomers far from the side equal part of chip (3) by 0.3mm, the separation trough (11) (13), heat conductive insulating item (12) are filled in the separation trough (11), are provided with several extensions on separation trough (11) cell wall T-slot (111) in heat dissipation bonding pad (1), the heat conductive insulating item (12) are equipped with the T shape portion being filled in T-slot (111) (121)；
The raw material of the epoxy insulator (6) includes following parts by weight of component:
80 ~ 100 parts of epoxy resin,
45 ~ 60 parts of linear phenol-aldehyde resin,
15 ~ 20 parts of liquid nitrile rubber,
6 ~ 10 parts of methyl diphenylene diisocyanate,
3 ~ 8 parts of pyrocarbonic acid diethyl ester,
2 ~ 6.5 parts of phosphate dibenzyl ester,
60 ~ 90 parts of silicon powder,
3 ~ 8 parts of γ-methacryloxypropyl trimethoxy silane,
0.3 ~ 2 part of the fluoro- 2- aminoanisole of 5-,
2,4,6- tri- 0.5 ~ 4 part of (dimethylamino methyl) phenol,
2 ~ 5 parts of release agent,
10 ~ 25 parts of fire retardant.
2. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the release agent choosing From at least one of stearic acid, stearate or oxidized polyethylene wax.
3. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the fire retardant is Borate and/or molybdate.
4. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the silicon powder is Melt silicon powder.
5. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the silicon powder D50 It is 4 ~ 8 μm, the silicon powder D100 is 10 ~ 25 μm.
6. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the heat conductive insulating Item (12) thickness is less than separation trough (11) groove depth.
7. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the pad monomer (13) area is not less than 0.3*0.3mm2。
8. the QFN encapsulating structure according to claim 3 with anti-short-circuit function, it is characterised in that: the conductive welding disk (4) and the spacing of heat dissipation bonding pad (1) is 0.3mm.
9. the QFN encapsulating structure according to claim 1 with anti-short-circuit function, it is characterised in that: the conductive welding disk It (4) is T-block.
CN201910166939.8A 2019-03-06 2019-03-06 QFN (quad Flat No-lead) packaging structure with short-circuit prevention function Active CN109904124B (en)

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CN201910166939.8A CN109904124B (en) 2019-03-06 2019-03-06 QFN (quad Flat No-lead) packaging structure with short-circuit prevention function
CN202110621536.5A CN113451228B (en) 2019-03-06 2019-03-06 High-strength QFN (quad Flat No lead) packaging structure
CN202110620907.8A CN113451226B (en) 2019-03-06 2019-03-06 Heat-resistant QFN (quad Flat No lead) packaging semiconductor device
CN202110620908.2A CN113451235B (en) 2019-03-06 2019-03-06 QFN (quad Flat No lead) packaged semiconductor device
CN202110620909.7A CN113451227B (en) 2019-03-06 2019-03-06 High-reliability QFN (quad Flat No lead) packaging device structure

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CN202110621536.5A Division CN113451228B (en) 2019-03-06 2019-03-06 High-strength QFN (quad Flat No lead) packaging structure
CN202110620909.7A Division CN113451227B (en) 2019-03-06 2019-03-06 High-reliability QFN (quad Flat No lead) packaging device structure
CN202110620907.8A Division CN113451226B (en) 2019-03-06 2019-03-06 Heat-resistant QFN (quad Flat No lead) packaging semiconductor device

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CN201910166939.8A Active CN109904124B (en) 2019-03-06 2019-03-06 QFN (quad Flat No-lead) packaging structure with short-circuit prevention function
CN202110621536.5A Active CN113451228B (en) 2019-03-06 2019-03-06 High-strength QFN (quad Flat No lead) packaging structure
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