CN203707187U - Wafer-level LED chip packaging structure - Google Patents
Wafer-level LED chip packaging structure Download PDFInfo
- Publication number
- CN203707187U CN203707187U CN201420052503.9U CN201420052503U CN203707187U CN 203707187 U CN203707187 U CN 203707187U CN 201420052503 U CN201420052503 U CN 201420052503U CN 203707187 U CN203707187 U CN 203707187U
- Authority
- CN
- China
- Prior art keywords
- led chip
- metal film
- reflective metal
- containment body
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 239000012528 membrane Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 230000008878 coupling Effects 0.000 claims description 29
- 238000010168 coupling process Methods 0.000 claims description 29
- 238000005859 coupling reaction Methods 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010020880 Hypertrophy Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a wafer-level LED chip packaging structure, and belongs to the semiconductor packaging technology field. An insulating layer (200) is arranged on a surface of a silicon-based body (110). A metal reflective membrane is arranged on the surface of the insulating layer (200). A metal projection I (610) and a metal projection II (620) are arranged on the surface of the metal reflective membrane. The metal reflective membrane is discontinuous and a metal reflective membrane I (310) and a metal reflective membrane II (320) are formed. The wafer-level LED chip packaging structure also comprises an enclosed body (710). A conductive electrode I (410) and a conductive electrode II (420) are arranged on the surface of the metal reflective membrane at the periphery of the enclosed body (710). A chip electrode (510) and the metal projection I (610) achieve electrical connection through the metal reflective membrane I (310) and the conductive electrode I (410). A chip electrode (520) and the metal projection II (620) achieve electrical connection through the metal reflective membrane II (320) and the conductive electrode II (420). The structure is concise, the manufacturing process is simple and the manufacturing cost is lowered.
Description
Technical field
The utility model relates to a kind of wafer level LED chip encapsulating structure, belongs to semiconductor die package technical field.
Background technology
Light-emitting diode (LED:Light Emitting Diode) is the semiconductor device that electricity is converted into light, has obtained significant progress as New Solid lighting source.Owing to being subject to the impact of the factors such as properties of product, manufacturing cost and overall dimension, the packing forms of LED also constantly develops with abundant, and silica-based board-like encapsulation is the LED packing forms occurring in recent years, because silicon is easy to processing, low price, has been subject to paying close attention in the industry.
Patent 200620058968.0 discloses an eka-silicon substrate-type encapsulating structure, refers to Fig. 1, and it need to make separator I 22,23 and separator II 51,53, and insulate by P type silicon and N-type silicon doping, manufacturing process complexity.
Patent 201080070299.0 discloses another kind of silica-based board-like encapsulating structure, refer to Fig. 2, it is distributed to the silicon substrate back side by silicon through hole by pad, and silicon through hole relates to lithographic opening, etching through hole, silicon face passivation, the complicated technology such as metal filled, and manufacturing cost is high.
Simultaneously for this two eka-silicons substrate-type LED method for packing, LED chip be by electrode or the direct upside-down mounting of soldered ball on metal level, therefore metal level need to have with Cu, Ni etc. the metal of solderability, but the metal reflective of Cu, Ni and so on is poor, therefore can cause more light loss; And the reasonable metal A g of reflective, Al and soldered ball are directly interconnected, can produce intermetallic compound hypertrophy through working long hours, exhaust, open circuit thereby cause, affect the long-term reliability of product.
This two eka-silicons substrate-type LED encapsulating products is inconvenient in use in addition, particularly to the silica-based board-like LED encapsulating products of the large scale of integrated multiple chips; The former needs manual bonding wire to connect power supply, and efficiency is low, and failure probability is high, and the later stage is changed inconvenient; The latter need to use complicated automatic mounting device, and the later stage is changed also very complicated.
Summary of the invention
The purpose of this utility model is to overcome the deficiency of current silica-based board-like LED encapsulation technology, and the wafer level LED chip encapsulating structure that a kind of simple for structure, manufacturing process is simple, reduce manufacturing cost is provided.
the purpose of this utility model is to realize like this:
A kind of wafer level LED chip of the utility model encapsulating structure, comprises silica-based body and the LED chip with chip electrode, and the surface of described silica-based body arranges insulating barrier,
The surface of described insulating barrier arranges reflective metal film, the surface of described reflective metal film arranges metal coupling I, metal coupling II, described LED chip is the surface to reflective metal film by metal coupling I, the upside-down mounting of metal coupling II, described reflective metal film is discontinuous, it disconnects between chip electrode and chip electrode, forms reflective metal film I, reflective metal film II;
Also comprise containment body, described containment body be arranged at LED chip periphery, and be vertically fixed on the surface of reflective metal film, described containment body, higher than the exiting surface of LED chip, is filled filler in containment body;
Conductive electrode I, conductive electrode II are set on the surface of the peripheral reflective metal film of described containment body, described chip electrode, metal coupling I realize electrical communication by reflective metal film I and conductive electrode I, and described chip electrode, metal coupling II realize electrical communication by reflective metal film II and conductive electrode II.
Optionally, rounded, the quadrangle of the cross section of described containment body or polygon.
Optionally, the inwall of described containment body and the angle of reflective metal film are α, 180 ° of 90 °≤α <.
Optionally, the inwall of described containment body and the angle of reflective metal film are α=135 °.
Optionally, the inwall of described containment body arranges reflective membrane.
Optionally, the reflectivity of described reflective metal film is >=80%, and conductance >=50%.
Optionally, described in each, in containment body, at least can hold a LED chip.
Optionally, described filler is full of the space between LED chip and insulating barrier.
Optionally, the top of described LED chip arranges light transmission piece, and described light transmission piece is flat board or planoconvex spotlight, and is fixed on the upper surface of described containment body.
The beneficial effects of the utility model are:
1, LED chip is seated in the surperficial containment body of silica-based body, the internal layer of containment body is reflectance coating, in conjunction with certain angle of inclination, utilize discontinuous reflective metal film to realize reflection and the outgoing of light simultaneously, and realize the electrical communication of chip electrode and conductive electrode, simplified encapsulating structure;
2, for the metal coupling of chip face-down bonding with adopt the moulding simultaneously of identical technique for the conductive electrode switching on power, simplified manufacturing process;
3, product presses sheet metal in use conductive electrode and just can switch on power, and mounts without bonding wire or automatic equipment by hand, easy to use and safeguard, change.
Accompanying drawing explanation
Fig. 1 is a kind of encapsulating structure schematic diagram of prior art.
Fig. 2 is the encapsulating structure schematic diagram of another kind of prior art.
Fig. 3 is the generalized section of the embodiment mono-of the utility model wafer level LED chip encapsulating structure.
Fig. 4 is the generalized section of the embodiment bis-of the utility model wafer level LED chip encapsulating structure.
Fig. 5 is the generalized section of the embodiment tri-of the utility model wafer level LED chip encapsulating structure.
Fig. 6 is the application schematic diagram of Fig. 5.
In figure:
Silica-based body 110, insulating barrier 200, reflective metal film I 310, reflective metal film II 320, conductive electrode I 410, conductive electrode II 420, LED chip 500, chip electrode 510, chip electrode 520, metal coupling I 610, metal coupling II 620, containment body 710, reflective membrane 711, filler 720, light transmission piece 730;
Panel 810
Sheet metal 910,920.
Embodiment
Now will with reference to accompanying drawing, the utility model be described more fully hereinafter, exemplary embodiment of the present utility model shown in the drawings, thus scope of the present utility model is conveyed to fully those skilled in the art by the disclosure.But the utility model can be realized in many different forms, and should not be interpreted as being limited to the embodiment setting forth here.
Embodiment mono-
Referring to Fig. 3, a kind of wafer level LED chip of the utility model encapsulating structure, comprises silica-based body 110 and the LED chip 500 with chip electrode 510,520, the surface coverage insulating barrier 200 of silica-based body 110.Insulating barrier 200 can be individual layer, forms silica by thermal oxidation, or forms the thin dielectric film of silica, silicon nitride, silicon oxynitride by chemical vapour deposition (CVD); Also can be the insulating barrier of the multiple layer combination of the silica, silicon nitride or the silicon oxynitride that form by these methods.The surface of insulating barrier 200 arranges aluminium, silver, titanium, chromium etc. and has the discontinuous reflective metal film of good reflective, and its reflectivity is >=80%, and conductance >=50%.Reflective metal film disconnects between chip electrode 510 and chip electrode 520, forms reflective metal film I 310 and reflective metal film II 320.Metal coupling I 610 is set in reflective metal film I 310, metal coupling II 620 is set in reflective metal film II 320.Two chip electrodes 510 of LED chip 500, chip electrode 520 be the surface at reflective metal film by metal coupling I 610,620 upside-down mountings of metal coupling II respectively.In metal coupling I 610, metal coupling II 620, LED chip 500 is realized upside-down mounting by Reflow Soldering or thermocompression bonding technique.Metal coupling I 610, metal coupling II 620 are the material with soldering reliability, as copper/tin, and copper/silver, nickel/tin or gold etc.
In the periphery of LED chip 500, containment body 710 is set, containment body 710 is vertically fixed on the surface of reflective metal film, and containment body 710 is higher than the exiting surface of LED chip 500, and its cross section is rounded, quadrangle or polygon, at least can hold a LED chip in containment body 710.The fillers 720 such as the interior filling gel of containment body 710, epoxy resin, in case LED chip 500 tarnishes or scratches, preferably, filler 720 is full of the space between LED chip 500 and insulating barrier 200, to improve the reliability of encapsulation.Needing the occasion of mixed light, the interior evenly mixed fluorescent powder of filler 720, as adopt blueness (light) LED chip 500 to excite yellow fluorescence amylaceous substance can obtain white light.
Arrange on the surface of the peripheral reflective metal film of containment body 710 and metal coupling I 610, conductive electrode I 410, conductive electrode II 420 that metal coupling II 620 materials are identical, chip electrode 510, metal coupling I 610 realize electrical communication by reflective metal film I 310 and conductive electrode I 410, and chip electrode 520, metal coupling II 620 realize electrical communication by reflective metal film II 320 and conductive electrode II 420.Conductive electrode I 410 remains for switching on power with conductive electrode II 420 in advance.
In technique manufacturing process, a kind of wafer level LED chip of the utility model encapsulating structure adopts advanced wafer level technique, forms metal coupling I 610, metal coupling II 620 and conductive electrode I 410, the conductive electrode II 420 with certain altitude in conjunction with photoetching process and electroplating technology in reflective metal film I 310 and reflective metal film II 320 simultaneously.
Embodiment bis-
As shown in Figure 4, a kind of wafer level LED chip of the utility model encapsulating structure, its encapsulating structure and embodiment mono-are similar, and difference is: the inwall of containment body 710 and the angle of reflective metal film are α, 180 ° of 90 °≤α <.The outward-dipping angle of inwall of containment body 710, forms reflector cover, is beneficial to light and reflects more containment body 710, improves light emission rate.The experiment proved that, when the inwall of containment body 710 and the angle of reflective metal film are α=135 °, light emission rate the best.
Embodiment tri-
As shown in Figure 5, a kind of wafer level LED chip of the utility model encapsulating structure, its encapsulating structure and embodiment mono-are similar, and difference is: can fixed flat planar above LED chip 500, the light transmission piece 730 such as planoconvex spotlight, and light transmission piece 730 is fixed on the upper surface of containment body 710.The fillers 720 such as the space between light transmission piece 730 and containment body 710 can filling gel, epoxy resin; Needing the occasion of mixed light, the interior evenly mixed fluorescent powder of filler 720, as adopt blueness (light) LED chip 500 fluorescence excitation amylaceous substances can obtain white light.In the occasion that does not need light transmission piece 730, filler 720 also can be made the spherical crown shape of protection LED chip 500, the different shape such as plane as required.Light transmission piece 730 adopts the material with good light transmission, as glass, quartz, sapphire etc., also can use organic resin, so that be shaped.In addition, light transmission piece 730 plays and reduces the impact on filler 720 such as outside moisture, contamination; The existence of light transmission piece 730 also can conveniently be cleaned.
A kind of wafer level LED chip of the utility model encapsulating structure is not limited to above preferred embodiment, silicon chamber can be more than one, containment body 710 is interior can hold a LED chip 500, also can hold multiple LED chips 500, between LED chip 500, connects in order by the reflective metal film disconnecting.Therefore any those skilled in the art are not departing from spirit and scope of the present utility model; any modification, equivalent variations and the modification above embodiment done according to technical spirit of the present utility model, all fall in the protection range that the utility model claim defines.
A kind of wafer level LED chip of the utility model encapsulating structure, it is arranged at the surface of panel 810, sheet metal 910,920 is distributed in the both sides of wafer level LED chip encapsulating structure, its conductive electrode I 410, conductive electrode II 420 are connected with panel 810 by having flexible sheet metal 910,920 respectively, sheet metal 910,920 is zigzag, as shown in Figure 6, be the application schematic diagram of the utility model wafer level LED chip encapsulating structure.The product that this wafer level LED chip encapsulating structure forms, as torch, illuminating lamp, sterilamp, cure lamp etc., in use, one end of described sheet metal 910,920 and panel 500 are connected, another side pressure is pushed down respectively conductive electrode I 410, conductive electrode II 420 can switch on power.It is more convenient, flexible that this kind of power connection mode switches on power than welded wire, if product breaks down, changes also more convenient.
Claims (9)
1. a wafer level LED chip encapsulating structure, comprises silica-based body (110) and with chip electrode (510), 520 LED chip (500), the surface of described silica-based body (110) arranges insulating barrier (200),
It is characterized in that: the surface of described insulating barrier (200) arranges reflective metal film, the surface of described reflective metal film arranges metal coupling I (610), metal coupling II (620), described LED chip (500) is the surface to reflective metal film by metal coupling I (610), metal coupling II (620) upside-down mounting, described reflective metal film is discontinuous, it disconnects between chip electrode (510) and chip electrode (520), forms reflective metal film I (310), reflective metal film II (320);
Also comprise containment body (710), described containment body (710) be arranged at LED chip (500) periphery, and be vertically fixed on the surface of reflective metal film, described containment body (710), higher than the exiting surface of LED chip (500), is filled filler (720) in containment body (710);
Conductive electrode I (410), conductive electrode II (420) are set on the surface of the peripheral reflective metal film of described containment body (710), described chip electrode (510), metal coupling I (610) realize electrical communication by reflective metal film I (310) and conductive electrode I (410), and described chip electrode (520), metal coupling II (620) realize electrical communication by reflective metal film II (320) and conductive electrode II (420).
2. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: the cross section of described containment body (710) is rounded, quadrangle or polygon.
3. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: the inwall of described containment body (710) and the angle of reflective metal film are α, 180 ° of 90 °≤α <.
4. wafer level LED chip encapsulating structure as claimed in claim 3, is characterized in that: the inwall of described containment body (710) and the angle of reflective metal film are α=135 °.
5. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: the inwall of described containment body (710) arranges reflective membrane (711).
6. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: the reflectivity of described reflective metal film is >=80%, and conductance >=50%.
7. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: in containment body described in each (710), at least can hold a LED chip (500).
8. wafer level LED chip encapsulating structure as claimed in claim 1, is characterized in that: described filler (720) is full of the space between LED chip (500) and insulating barrier (200).
9. the wafer level LED chip encapsulating structure as described in any one in claim 1 to 8, it is characterized in that: the top of described LED chip (500) arranges light transmission piece (730), described light transmission piece (730) is flat board or planoconvex spotlight, and is fixed on the upper surface of described containment body (710).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420052503.9U CN203707187U (en) | 2014-01-27 | 2014-01-27 | Wafer-level LED chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420052503.9U CN203707187U (en) | 2014-01-27 | 2014-01-27 | Wafer-level LED chip packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203707187U true CN203707187U (en) | 2014-07-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420052503.9U Expired - Lifetime CN203707187U (en) | 2014-01-27 | 2014-01-27 | Wafer-level LED chip packaging structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN203707187U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261766A (en) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | Flip film LED chip structure and preparation method thereof |
-
2014
- 2014-01-27 CN CN201420052503.9U patent/CN203707187U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261766A (en) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | Flip film LED chip structure and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140709 |