CN107845714B - COB packaging form for high-power LED chip - Google Patents
COB packaging form for high-power LED chip Download PDFInfo
- Publication number
- CN107845714B CN107845714B CN201711033656.3A CN201711033656A CN107845714B CN 107845714 B CN107845714 B CN 107845714B CN 201711033656 A CN201711033656 A CN 201711033656A CN 107845714 B CN107845714 B CN 107845714B
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- China
- Prior art keywords
- led chip
- ceramic substrate
- layer
- lens
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000010453 quartz Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 3
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000032683 aging Effects 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004383 yellowing Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a COB (chip on Board) packaging form for a high-power LED (light-emitting diode) chip, which comprises a ceramic substrate, a lens bracket and a quartz lens, wherein the lens bracket is arranged on the ceramic substrate and connected with the ceramic substrate, a mounting hole is formed in the lens bracket, a reflecting cup is arranged in the mounting hole, the ceramic substrate is provided with the LED chip corresponding to the reflecting cup, and the quartz lens penetrates through the reflecting cup and is connected with the LED chip. According to the COB packaging form for the high-power LED chip, the reflecting cup is arranged in the mounting hole of the lens support, so that the light emitting efficiency is improved, and meanwhile, the quartz lens is firmly fixed in the mounting hole of the lens support; the quartz lens is high temperature resistant and aging resistant, and yellowing phenomenon can not occur, so that the light emitting efficiency is improved; the ceramic substrate realizes high-voltage isolation of the electronic product; the invention has simple structure, shortened manufacture time and low cost.
Description
Technical Field
The invention relates to a COB packaging form for a high-power LED chip.
Background
The packaging substrate of the high-power LED module in the prior art is generally a metal substrate, and the packaging lens generally uses a gluing lens, but the withstand voltage value is low, so that the safety risk exists; the gluing lens is aged quickly and becomes yellow within one year, and the light emitting efficiency is influenced.
The above-mentioned drawbacks, worth improving.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a COB packaging form for a high-power LED chip.
The technical scheme of the invention is as follows:
the utility model provides a COB packaging form for high-power LED chip, includes ceramic substrate, lens holder and quartz lens, the lens holder is located ceramic substrate's the higher authority and with ceramic substrate connects, be equipped with the mounting hole on the lens holder, locate anti-light cup in the mounting hole, be equipped with on the ceramic substrate with anti-light cup position corresponding LED chip, quartz lens passes anti-light cup and with the LED chip is connected.
Further, the ceramic substrate comprises a ceramic layer and a first circuit layer, the first circuit board is arranged on the upper surface of the ceramic layer and connected with the upper surface of the ceramic layer, a circuit and an LED chip are arranged on the first circuit layer, and the circuit is connected with the LED chip.
Further, the number of the LED chips is multiple.
Further, the first circuit layer is electroplated with a metal layer.
Further, the ceramic layer is made of aluminum nitride or aluminum oxide.
Furthermore, the first circuit layer is made of nickel gold or nickel palladium gold.
Furthermore, the ceramic substrate further comprises a second circuit layer, and the second circuit layer is arranged on the lower surface of the ceramic layer and connected with the lower surface of the ceramic layer.
Further, the surface of the second circuit layer is electroplated with a metal layer.
Furthermore, the second circuit layer is made of nickel gold or nickel palladium gold.
According to the COB packaging form for the high-power LED chip, the reflection cup is arranged in the mounting hole of the lens support, so that the light emitting efficiency is improved, and meanwhile, the quartz lens is firmly fixed in the mounting hole of the lens support; the quartz lens is high temperature resistant and aging resistant, and yellowing phenomenon can not occur, so that the light emitting efficiency is improved; the ceramic substrate realizes high-voltage isolation of the electronic product; the invention has simple structure, shortened manufacture time and low cost.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is an exploded view of the present invention.
FIG. 3 is a schematic view of a ceramic substrate according to the present invention.
In the figures, the reference numerals are as follows:
1-a ceramic substrate; 2-a lens holder; 3-quartz lens;
11-a first line layer; 12-a ceramic layer; 13 a second circuit layer; 21-mounting holes.
Detailed Description
The invention is further described with reference to the following figures and embodiments:
as shown in fig. 1 to 3, a COB package form for a high-power LED chip includes a ceramic substrate 1, a lens holder 2 and a quartz lens 3, the lens holder 2 is disposed on the ceramic substrate 1 and connected to the ceramic substrate 1, the lens holder 2 is provided with a mounting hole 21, the mounting hole 21 is disposed in a reflective cup, the ceramic substrate 1 is provided with an LED chip corresponding to the reflective cup, and the quartz lens 3 penetrates the reflective cup and is connected to the LED chip.
The beneficial effect who so sets up does: according to the COB packaging form for the high-power LED chip, the reflecting cup is arranged in the mounting hole 21 of the lens support 2, so that the light emitting efficiency is improved, and meanwhile, the quartz lens 3 is firmly fixed in the mounting hole 21 of the lens support 2; the quartz lens 3 is high temperature resistant and aging resistant, and does not have the yellowing phenomenon, thereby improving the light emitting efficiency; the ceramic substrate 1 meets the high-voltage isolation requirement of the electronic product; the invention has simple structure, shortened manufacture time and low cost.
In one embodiment, the ceramic substrate 1 includes a ceramic layer 12 and a first circuit layer 11, the first circuit layer 11 is disposed on the upper surface of the ceramic layer 12 and connected to the upper surface 12 of the ceramic layer, and the first circuit layer 11 is disposed with a circuit and an LED chip, and the circuit is connected to the LED chip. The arrangement of the first circuit layer can avoid the circuit and the lens holder 2, and avoid short circuit.
In one embodiment, the number of LED chips is plural. In one embodiment, the LED chips are forty.
In one embodiment, the ceramic substrate 1 includes a second wiring layer 13, and the second wiring layer 13 is disposed on the lower surface of the ceramic layer 12 and connected to the lower surface of the ceramic layer 12. Two surfaces of the ceramic substrate 1 are provided with circuit layers, so that the circuit and the lens support 2 can be avoided, and short circuit is avoided.
In one embodiment, the surfaces of the first circuit layer 11 and the second circuit layer 13 are both plated with a metal layer. The arrangement of the metal layer can avoid the warping of the ceramic substrate.
In one embodiment, the thicknesses of the first circuit layer 11 and the second circuit layer 13 may be the same or different. The thicknesses of the first and second circuit layers 11 and 13 are set according to the LED operating current requirements and the strength requirements of the substrate.
In one embodiment, the thickness of the first circuit layer 11 is 0.2-0.8 mm; the thickness of the second circuit layer 13 is 0.2-0.5 mm, and in order to prevent the ceramic substrate from warping, the thickness of the second circuit layer 13 needs to be matched with that of the first circuit layer 11; the thickness of the ceramic layer 12 is 0.3 to 1 mm.
In one embodiment, the material of the ceramic layer 12 is aluminum nitride or aluminum oxide.
In one embodiment, the material of the first circuit layer 11 is ni/au or pd/au.
In one embodiment, the second circuit layer 13 is made of ni-au or pd-au.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
The invention is described above with reference to the accompanying drawings, which are illustrative, and it is obvious that the implementation of the invention is not limited in the above manner, and it is within the scope of the invention to adopt various modifications of the inventive method concept and technical solution, or to apply the inventive concept and technical solution to other fields without modification.
Claims (3)
1. A COB packaging form for a high-power LED chip is characterized by comprising a ceramic substrate, a lens support and a quartz lens, wherein the lens support is arranged on the ceramic substrate and connected with the ceramic substrate, a mounting hole is formed in the lens support, a light reflecting cup is arranged in the mounting hole, an LED chip corresponding to the position of the light reflecting cup is arranged on the ceramic substrate, and the quartz lens penetrates through the light reflecting cup and is connected with the LED chip;
the ceramic substrate comprises a ceramic layer and a first circuit layer, the first circuit board is arranged on the upper surface of the ceramic layer and connected with the upper surface of the ceramic layer, a circuit and an LED chip are arranged on the first circuit layer, and the circuit is connected with the LED chip;
the ceramic substrate further comprises a second circuit layer, and the second circuit layer is arranged on the lower surface of the ceramic layer and connected with the lower surface of the ceramic layer; the thickness of the second circuit layer is matched with that of the first circuit layer;
the first circuit layer is electroplated with a metal layer;
the first circuit layer is made of nickel gold or nickel palladium gold.
2. The COB package form of the high-power LED chip as claimed in claim 1, wherein the number of the LED chips is plural.
3. The COB package form of the high-power LED chip as claimed in claim 1, wherein the ceramic layer is made of aluminum nitride or aluminum oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711033656.3A CN107845714B (en) | 2017-10-30 | 2017-10-30 | COB packaging form for high-power LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711033656.3A CN107845714B (en) | 2017-10-30 | 2017-10-30 | COB packaging form for high-power LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107845714A CN107845714A (en) | 2018-03-27 |
| CN107845714B true CN107845714B (en) | 2020-08-28 |
Family
ID=61681814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711033656.3A Active CN107845714B (en) | 2017-10-30 | 2017-10-30 | COB packaging form for high-power LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845714B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203871325U (en) * | 2014-05-21 | 2014-10-08 | 深圳市格天光电有限公司 | Aluminium nitride ceramic bracket |
| CN106159065A (en) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging module for high-power LED chip |
-
2017
- 2017-10-30 CN CN201711033656.3A patent/CN107845714B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203871325U (en) * | 2014-05-21 | 2014-10-08 | 深圳市格天光电有限公司 | Aluminium nitride ceramic bracket |
| CN106159065A (en) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging module for high-power LED chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107845714A (en) | 2018-03-27 |
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