KR101051488B1 - Method for manufacturing light emitting diode unit, and light emitting diode unit manufactured by this method - Google Patents

Abstract

According to an embodiment of the present invention, an upper conductive layer having a positive electrode pattern and a negative electrode pattern is formed on an upper surface of an insulating substrate, and a thermal conductive layer for heat dissipation is formed on a lower surface of the insulating substrate. A first step of preparing an upper substrate having openings formed between the conductive layer and the upper conductive layer serving as the negative electrode pattern; A second process of preparing a lower substrate having upper and lower thermal conductive layers formed on upper and lower surfaces of the insulating substrate for heat dissipation; A third step of adhering the upper substrate and the lower substrate through an adhesive layer; A fourth step of mounting a light emitting diode chip on the adhesive layer in the opening of the upper substrate; A fifth step of wire-bonding the N-type pad and the P-type pad of the light emitting diode chip to the upper conductive layer, wherein the upper electrode conductive layer becomes a positive electrode pattern and a negative electrode pattern; A method of manufacturing a light emitting diode unit comprising a sixth step of epoxy molding an opening and a wire bonding portion of the upper substrate, and a light emitting diode unit manufactured by the method.

Description

Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by this method {Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by the method}

The present invention relates to a light emitting diode unit, and more particularly, to a method for manufacturing a new type of light emitting diode unit which can reduce the thickness, can significantly simplify the manufacturing process and can significantly reduce the manufacturing cost, and It relates to a light emitting diode unit manufactured by.

A light emitting diode is an electronic device that generates a small number of carriers (electrons or holes) injected using a p-n junction structure of a semiconductor, and emits light by recombination thereof.

Such light emitting diodes have been used in various fields, and recently, they have been spotlighted as a replacement device for fluorescent lamps because their lifetimes are semi-permanent and there are no harmful substances (RoHS, ELV, PFOS, etc.).

Typically, a single light emitting diode unit is packaged by bonding an LED chip with Ag, for example Ag, on a lead frame, wire bonding an N pad and a P pad of a semiconductor chip, and then epoxy molding. The single light emitting diode package configured as described above is installed on a printed circuit board in a state where it is mounted on a heat sink for heat dissipation, or a heat sink in a state where the printed circuit board is mounted using, for example, surface mount technology (SMT). It is used attached to the phase.

In addition, for example, a light emitting diode array unit used in an LCD backlight or the like is provided with a plurality of single light emitting diode packages configured as described above in an array form on a printed circuit board using, for example, surface mount technology (SMT). The LED array unit configured as described above is attached to a heat sink for heat dissipation.

As described above, in order to manufacture the light emitting diode unit, a manufacturing process having different characteristics such as lead frame manufacturing, heat sink manufacturing, light emitting diode package manufacturing, printed circuit board manufacturing, light emitting diode package mounting, and the like should be collected. That is, it is difficult for one manufacturer to manufacture a light emitting diode unit alone, and it is possible to manufacture the light emitting diode unit through cooperation of different companies. For this reason, there is a problem that the manufacturing process of the light emitting diode unit is complicated and the manufacturing cost of the light emitting diode unit is increased.

In addition, in the related art, since the light emitting diode chip is mounted on a lead frame and packaged, and the light emitting diode package is mounted on a printed circuit board, the thickness of the light emitting diode unit is increased as a whole. There is a problem.

In particular, in order to dissipate a light emitting diode, a light emitting diode chip is mounted on a lead frame and packaged, and then the light emitting diode package is mounted on a printed circuit board via a heat sink or a light emitting diode package is mounted on a printed circuit board. After that, the printed circuit board is bonded to the heat sink. Therefore, there is a problem that the overall thickness of the light emitting diode unit becomes thick, and it becomes an obstacle to thinning of electronic products employing such a light emitting diode unit.

Accordingly, an object of the present invention is to provide a light emitting diode unit and a method of manufacturing the same, which can significantly simplify the manufacturing process and significantly reduce the manufacturing cost.

In addition, an object of the present invention is to provide a light emitting diode unit and a method of manufacturing the same that can be reduced to solve the conventional problems described above, the overall thickness.

In addition, an object of the present invention is to provide a light emitting diode unit and a method of manufacturing the same that can be removed to solve the above-mentioned conventional problems, a separate heat sink for heat dissipation.

First, in the specification including the claims of the present invention, the term "electrically conductive layer" refers to a layer or film made of a material having good electrical conductivity, and the term "thermally conductive layer" is a layer made of a material having good thermal conductivity. Or membrane.

In order to achieve the above object, a method of manufacturing a light emitting diode unit according to the present invention includes an upper conductive layer formed of a positive electrode pattern and a negative electrode pattern on an upper surface of an insulating substrate, and a heat radiating function on a lower surface of the insulating substrate. A first step of preparing an upper substrate having an opening formed therebetween, wherein the upper substrate is formed between the upper conductive layer serving as the positive electrode pattern and the upper conductive layer serving as the negative electrode pattern; A second process of preparing a lower substrate having upper and lower thermal conductive layers formed on upper and lower surfaces of the insulating substrate for heat dissipation; A third step of adhering the upper substrate and the lower substrate through an adhesive layer; A fourth step of mounting a light emitting diode chip on the adhesive layer in the opening of the upper substrate; A fifth step of wire-bonding the N-type pad and the P-type pad of the light emitting diode chip to the upper conductive layer, wherein the upper electrode conductive layer becomes a positive electrode pattern and a negative electrode pattern; And a sixth step of epoxy molding the opening and the wire bonding portion of the upper substrate.

Here, it is preferable that the opening has an inclined surface in which the opening is narrowed toward the lower side, and the reflecting film for reflecting light is plated on the inclined surface of the opening in the upper substrate in the first step.

In addition, at least one opening is formed in the lower substrate in the second process, and the inner surface of the opening of the lower substrate is coated with a material having excellent thermal conductivity so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. Or plated.

In addition, at least one opening is formed in the lower substrate in the second process, and a material having excellent thermal conductivity is filled in the opening of the lower substrate so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. desirable.

In addition, the adhesive layer in the third step is preferably made of an adhesive having excellent thermal conductivity.

In addition, in the fourth step, it is preferable to apply the conductive film having excellent electrical conductivity onto the adhesive layer, and then mount the light emitting diode chip on the applied conductive film.

On the other hand, in order to achieve the above object, the manufacturing method of the light emitting diode unit according to the present invention, a plurality of electrode patterns arranged in a line spaced apart at regular intervals on the upper surface of the insulating substrate, and one end of the plurality of electrode patterns A positive power wiring pattern connected to an electrode pattern of the upper electrode conductive layer and a negative power wiring pattern connected to an electrode pattern of the other end of the plurality of electrode patterns, and an upper conductive layer formed on the lower surface of the insulating substrate. A first step of preparing a top substrate having a thermal conductive layer formed thereon and having openings formed between the adjacent electrode patterns; A second process of preparing a lower substrate having upper and lower thermal conductive layers formed on upper and lower surfaces of the insulating substrate for heat dissipation; A third step of adhering the upper substrate and the lower substrate through an adhesive layer; A fourth step of mounting a light emitting diode chip on the adhesive layer in the opening of the upper substrate; A fifth step of wire bonding the N-type pad of the light emitting diode chip to an adjacent one electrode pattern and wire bonding the P-type pad of the light emitting diode chip to an adjacent other electrode pattern; And a sixth step of epoxy molding the opening of the upper substrate and the wire bonding portion.

Here, it is preferable that the opening has an inclined surface in which the opening is narrowed toward the lower side, and the reflecting film for reflecting light is plated on the inclined surface of the opening in the upper substrate in the first step.

In addition, at least one opening is formed in the lower substrate in the second process, and the inner surface of the opening of the lower substrate is coated with a material having excellent thermal conductivity so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. It is preferable to be plated.

In addition, at least one opening is formed in the lower substrate in the second process, and a material having excellent thermal conductivity is filled in the opening of the lower substrate so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. desirable.

In addition, the adhesive layer in the third step is preferably made of an adhesive having excellent thermal conductivity.

In the fourth step, it is preferable to apply the conductive film having excellent electrical conductivity onto the adhesive layer, and then mount the light emitting diode chip on the coated conductive film.

On the other hand, in order to achieve the above object, the light emitting diode unit according to the present invention is characterized by being manufactured by the above-described manufacturing method.

According to the present invention configured as described above, it can be avoided from complex manufacturing processes such as conventional lead frame manufacturing, heat sink manufacturing, light emitting diode package manufacturing, printed circuit board manufacturing, light emitting diode package mounting, die bonding technology, wire bonding technology and epoxy molding Accumulating the technology alone can greatly simplify the manufacturing process as the printed circuit board manufacturing plant can manufacture by simply adding die bonding, wire bonding and epoxy molding to the printed circuit board manufacturing technology. As a result, manufacturing costs can be significantly reduced.

In addition, according to the present invention configured as described above, compared to a light emitting diode unit having a conventional light emitting diode package, a printed circuit board and a heat sink, it has a thickness of approximately two printed circuit boards laminated, thereby significantly reducing the overall thickness. This makes it suitable for electronic devices requiring thinning.

In addition, according to the present invention configured as described above, since a total of three heat conductive layers of the lower thermal conductive layer of the upper substrate and the upper and lower thermal conductive layers of the upper substrate perform a conventional heat sink, proper heat dissipation is possible without a separate heat sink. Done.

Hereinafter, a light emitting diode unit according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, a method of manufacturing a single light emitting diode unit as a light emitting diode unit according to a preferred embodiment of the present invention will be described with reference to FIGS. 1 to 6.

As shown in Figs. 1A and 1B, an upper substrate constituting the single light emitting diode unit of this embodiment is prepared. 1A is a plan view of the prepared upper substrate, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG. 1A.

The upper substrate may include, for example, an insulating substrate 10 such as polyimide, and upper conductive layers 14 and 14 made of a material having excellent electrical conductivity such as, for example, Cu formed on the upper surface of the insulating substrate 10. And a lower thermal conductive layer 12 made of a material having excellent thermal conductivity such as, for example, Cu formed on the lower surface of the insulating substrate 10. Here, as a method of forming the upper conductive layers 14 and 14 and the lower thermal conductive layer 12 on the insulating substrate 10, for example, a Cu layer is formed on the insulating substrate as in the double-sided printed circuit board. Known methods can be used.

The upper conductive layers 14 and 14 are formed in two regions of the upper surface of the insulating substrate 10 except for an approximately center region (a region which will be opened in a later process and the light emitting diode chip will be located inside the opening). Each of the two upper conductive layers 14 and 14 is used as a positive electrode pattern and a negative electrode pattern of the light emitting diode unit. In addition, the lower thermal conductive layer 12 is preferably formed on the entire surface of the lower surface of the insulating substrate 10, it is for dissipating heat generated from the light emitting diode chip.

Then, as shown in Figs. 2A and 2B, openings 16 are formed in approximately the center region (i.e. between two upper conductive layers 14 and 14) of the prepared upper substrate. Here, FIG. 2A is a plan view of an upper substrate having openings, and FIG. 2B is a cross-sectional view taken along the line BB ′ of FIG. 2A.

The opening 16 has an inclined surface 16a downward and has a shape in which the opening is smaller in the lower side than the upper side, and can be formed using a known technique such as, for example, a laser cutting technique.

In the same figure, the opening 16 has a cylindrical shape in which the diameter gradually decreases. However, the present invention is not limited thereto, but may be any other shape as long as the opening is smaller than the upper side. In addition, depending on the use of the single light emitting diode unit according to the present embodiment, the opening 16 may have a shape without an inclined surface.

3A and 3B, the reflective film 18 made of, for example, aluminum or silver, which can efficiently reflect light only on the inclined surface 16a of the opening 16 of the upper substrate, is used. Plate. 3A is a plan view of an upper substrate on which a reflective film is plated, and FIG. 3B is a cross-sectional view taken along the line CC ′ of FIG. 3A.

4A and 4B, the lower substrate constituting the single light emitting diode unit of this embodiment is prepared. 4A is a plan view of the prepared lower substrate, and FIG. 4B is a cross-sectional view taken along the line D-D 'of FIG. 4A.

The lower substrate may include, for example, an insulating substrate 20 such as polyimide, an upper thermal conductive layer 24 made of a material having high thermal conductivity, such as, for example, Cu formed on the upper surface of the insulating substrate 20, and the insulating substrate 20. ) Is formed of a lower thermal conductive layer 22 formed of a material having excellent thermal conductivity such as, for example, Cu. In addition, the upper and lower thermal conductive layers 24 and 12 are preferably formed on the upper and lower surfaces of the insulating substrate 20, and are used to dissipate heat generated from the light emitting diode chip.

Here, as a method of forming the upper thermal conductive layer 24 and the lower thermal conductive layer 22 on the insulating substrate 20, a known method of forming a Cu layer on the insulating substrate as in the case of a double-sided printed circuit board may be used. Can be.

Thereafter, as shown in Figs. 5A and 5B, at least one aperture 26 is formed using a known technique such as, for example, a laser cutting technique, in a region other than an approximately center region of the prepared lower substrate. 5A is a plan view of a lower substrate having openings formed therein, and FIG. 5B is a cross-sectional view taken along the line E-E 'of FIG. 5A.

In addition, the opening surface of the opening 26 may be coated or plated with a material having excellent thermal conductivity, such as, for example, Cu, or may be filled with a material having excellent thermal conductivity, such as, for example, Cu, or the like. It is desirable to allow the thermal conductivity layer 24 and the lower thermal conductive layer 22 to be electrically conductive so that the heat from the upper thermal conductive layer 24 can be quickly transferred to the lower thermal conductive layer 22.

Here, the openings 26 shown in FIGS. 5A and 5B are merely for increasing the thermal conductivity efficiency and are not necessarily required in the present invention.

6A and 6B, the adhesive layer 30 is coated on the lower substrates of FIGS. 5A and 5B, and the lower substrate and the above-described substrates 3A and 3A are applied through the adhesive layer 30. The upper substrate of FIG. 3B is bonded. 6A is a top view of the single light emitting diode unit, and FIG. 6B is a cross-sectional view taken along the line FF ′ of FIG. 6A.

Thereafter, the conductive layer 32 having excellent electrical conductivity, such as Ag, is applied onto the adhesive layer 30 exposed by the opening 16 of the upper substrate, and then onto the conductive layer 32. The light emitting diode chip 33 is bonded. Here, one example of the light emitting diode chip 33 is an N region and a P region are stacked on the sapphire substrate via an active region, an N-type pad 33N is formed on the N region, and a P-type pad ( 33P) is formed.

Subsequently, the P-type pad 33P and the N-type pad 33N of the LED chip 33 are bonded to the upper conductive layers 14 and 14 of the upper substrate, respectively, using bonding wires 34 and 34. By wire bonding, the P-type pad 33P and the N-type pad 33N of the LED chip 33 are electrically connected to the upper conductive layers 14 and 14, which are positive electrode patterns and negative electrode patterns, respectively. Connect.

The epoxy molding is then used, for example, with a transparent epoxy on the upper substrate comprising the opening 16 of the upper substrate, the bonding wire 34, and the wire bonding portions of the upper conductive layers 14, 14 of the upper substrate. (35) is formed. Herein, in order for the light emitting diode unit to emit white light, epoxy molding may be performed using a transparent epoxy mixed with YAG-based fluorescent material (for example, yellow phosphor).

In the single light emitting diode unit manufactured according to the above process, the upper conductive layers 14 and 14 of the upper substrate are formed by the positive electrode pattern and the negative electrode pattern of the light emitting diode chip 33. The lower thermal conductive layer 12 of the upper substrate, the upper thermal conductive layer 24 of the lower substrate, and the lower thermal conductive layer 22 of the lower substrate perform a heat sink function to dissipate heat generated by the LED chip 33. Done. That is, in the present invention, since the three-layer heat sink structure is provided, heat generated by the light emitting diode chip 33 can be efficiently dissipated.

On the other hand, the adhesive layer 30 is preferably made of an adhesive material excellent in thermal conductivity. In this case, since the lower thermal conductive layer 12 of the upper substrate and the upper thermal conductive layer 24 of the lower substrate are in a thermally conductive state, the heat generated by the LED chip 33 can be efficiently radiated downward. do.

5A and 5B, when the opening 26 is formed in the lower substrate, and the surface having a high thermal conductivity is coated or plated or the material having the excellent thermal conductivity is filled in the opening 26. The heat generated by the chip 33 can be efficiently dissipated downward.

Meanwhile, in the above-described embodiment, a power wiring pad coupled with the conductive layers 14 and 14 of the upper substrate, the lower thermal conductive layer 12 of the upper substrate, and the upper and lower thermal conductive layers 24 and 22 of the lower substrate. Forming a heat dissipation pad that is coupled to the) is a person having ordinary skill in the art can easily implement the electrode pad and the heat dissipation pad using a variety of methods known, the description of the formation thereof is omitted. do.

Next, a method of manufacturing a light emitting diode array unit in which a plurality of light emitting diodes are arranged in series as a light emitting diode unit according to a preferred embodiment of the present invention will be described with reference to FIGS. 7 to 12.

As shown in Figs. 7A and 7B, an upper substrate constituting the light emitting diode array unit of this embodiment is prepared. 7A is a plan view of the prepared upper substrate, and FIG. 7B is a cross-sectional view taken along the line G-G 'of FIG. 1A.

The upper substrate is formed of an insulating substrate 10 such as polyimide, for example, and upper conductive layers 14, 14a, and 14b formed of a material having excellent electrical conductivity such as, for example, Cu formed on the upper surface of the insulating substrate 10. And the lower thermal conductive layer 12 made of a material having excellent thermal conductivity such as, for example, Cu formed on the lower surface of the insulating substrate 10. Here, as a method of forming the upper conductive layers 14, 14a, 14b and the lower thermal conductive layer 12 on the insulating substrate 10, for example, a Cu layer is formed on the insulating substrate as in the double-sided printed circuit board. Known methods can be used.

In addition, the upper conductive layer 14 is formed in the longitudinal direction leaving a region to be opened later in the middle of the upper surface of the insulating substrate 10, the upper conductive layer 14 is a light emitting diode array to be formed later Electrode layer.

In addition, the upper conductive layer 14a is formed to be connected to the upper conductive layer 14 at one end, and the upper conductive layer 14a is configured to supply positive power to the LED array to be formed later. Positive power wiring. The upper conductive layer 14b is formed in connection with the upper conductive layer 14 at the other end, and the upper conductive layer 14b is negative to supply negative power to the LED array to be formed later. It becomes the power supply wiring.

In addition, the lower thermal conductive layer 12 is preferably formed on the entire surface of the lower surface of the insulating substrate 10, it is for dissipating heat generated from the light emitting diode chip.

Then, as shown in Figs. 8A and 8B, openings 16 are formed between the upper conductive layers 14 and 14 in the prepared upper substrate. Here, FIG. 8A is a plan view of the upper substrate with openings, and FIG. 8B is a cross-sectional view taken along the line H-H 'of FIG. 2A.

The opening 16 has an inclined surface 16a downward and has a shape in which the opening is smaller in the lower side than the upper side, and can be formed using a known technique such as, for example, a laser cutting technique.

In the same figure, the opening 16 has a cylindrical shape in which the diameter gradually decreases. However, the present invention is not limited thereto, but may be any other shape as long as the opening is smaller than the upper side. In addition, the opening 16 may have a shape without an inclined surface depending on the use of the light emitting diode array unit according to the present embodiment.

Next, as shown in FIGS. 9A and 9B, a reflective film 18 made of a material such as aluminum or silver, which can reflect light with high efficiency only on the inclined surface 16a of the opening 16 of the upper substrate, is formed. Plate. 9A is a plan view of an upper substrate on which a reflective film is plated, and FIG. 9B is a cross-sectional view taken along line II ′ of FIG. 9A.

On the other hand, as shown in Figs. 10A and 10B, a lower substrate constituting the light emitting diode array unit of this embodiment is prepared. 10A is a plan view of the prepared lower substrate, and FIG. 10B is a cross-sectional view taken along the line J-J 'of FIG. 10A.

The lower substrate may include, for example, an insulating substrate 20 such as polyimide, an upper thermal conductive layer 24 made of a material having high thermal conductivity, such as, for example, Cu formed on the upper surface of the insulating substrate 20, and the insulating substrate 20. ) Is formed of a lower thermal conductive layer 22 formed of a material having excellent thermal conductivity such as, for example, Cu. In addition, the upper and lower thermal conductive layers 24 and 12 are preferably formed on the upper and lower surfaces of the insulating substrate 20, and are used to dissipate heat generated from the light emitting diode chip.

Here, as a method of forming the upper thermal conductive layer 24 and the lower thermal conductive layer 22 on the insulating substrate 20, a known method of forming a Cu layer on the insulating substrate as in the case of a double-sided printed circuit board may be used. Can be.

11A and 11B, at least one aperture 26 is formed on the prepared lower substrate by using a known technique such as, for example, a laser cutting technique. Here, FIG. 11A is a plan view of a lower substrate having openings formed therein, and FIG. 11B is a cross-sectional view taken along the line K-K 'of FIG. 11A.

In addition, the opening surface of the opening 26 may be coated or plated with a material having excellent thermal conductivity, such as, for example, Cu, or may be filled with a material having excellent thermal conductivity, such as, for example, Cu, or the like. It is desirable to allow the thermal conductivity layer 24 and the lower thermal conductive layer 22 to be electrically conductive so that the heat from the upper thermal conductive layer 24 can be quickly transferred to the lower thermal conductive layer 22.

Here, the openings 26 shown in Figs. 11A and 11B are merely for increasing the thermal conductivity efficiency and are not necessarily required in the present invention.

12A and 12B, an adhesive layer 30 is coated on the lower substrates of FIGS. 11A and 11B and the lower substrate and the above-described substrates 9A and 9A are applied through the adhesive layer 30. The upper substrate of FIG. 9B is bonded. 12A is a top view of the LED array unit, and FIG. 12B is a cross-sectional view taken along the line L-L 'of FIG. 12A.

Thereafter, after applying the conductive film 32 having excellent electrical conductivity, such as Ag, on the adhesive layer 30 exposed by the opening 16 of the upper substrate, the conductive film 32 is then applied on the conductive film 32. The light emitting diode chip 33 is bonded. An example of the light emitting diode chip 33 is a structure in which an N region and a P region are stacked on an sapphire substrate via an active region, an N-type pad is formed on the N region, and a P-type pad is formed on the P region. Has

Subsequently, the P-type pads and the N-type pads of the LED chip 33 are respectively wire-bonded to the upper conductive layers 14 and 14 of the upper substrate using bonding wires 34 and 34 to emit light. P-type pads and N-type pads of the diode chip 33 are electrically connected to the upper conductive layers 14 and 14, which are positive electrode patterns and negative electrode patterns, respectively.

The epoxy molding is then used, for example, with a transparent epoxy on the upper substrate comprising the opening 16 of the upper substrate, the bonding wire 34, and the wire bonding portions of the upper conductive layers 14, 14 of the upper substrate. (35) is formed. Herein, in order for the light emitting diode unit to emit white light, epoxy molding may be performed using a transparent epoxy mixed with YAG-based fluorescent material (for example, yellow phosphor).

In the light emitting diode array unit according to the present embodiment manufactured through the above process, the upper conductive layers 14 and 14 of the upper substrate are formed by the positive electrode pattern and the negative electrode pattern of the light emitting diode chip 33. The upper conductive layers 14a and 14b of the upper substrate become positive power wiring and negative power wiring of the array of light emitting diode chips 33, and the lower thermal conductive layer 12 of the upper substrate and the upper portion of the lower substrate The thermal conductive layer 24 and the lower thermal conductive layer 22 of the lower substrate serve as a heat sink to dissipate heat generated by the array of LED chips 33. That is, in the present embodiment, since the heat sink structure has three layers, the heat generated by the array of light emitting diode chips 33 can be efficiently dissipated.

On the other hand, the adhesive layer 30 is preferably made of an adhesive material excellent in thermal conductivity. In this case, since the lower thermal conductive layer 12 of the upper substrate and the upper thermal conductive layer 24 of the lower substrate are in a thermally conductive state, heat generated by the array of light emitting diode chips 33 can be efficiently radiated downward. Will be.

Also, as shown in FIGS. 11A and 11B, when the opening 26 is formed in the lower substrate, and the surface having the excellent thermal conductivity is coated or plated or the material having the excellent thermal conductivity is filled in the opening 26, the light emitting diode The heat generated by the chip 33 array can be efficiently radiated downward.

Meanwhile, in the above-described embodiment, a power wiring pad or a power connector coupled with the conductive layers 14a and 14b of the upper substrate, the lower thermal conductive layer 12 of the upper substrate, and the upper and lower thermal conductive layers 24 of the lower substrate, Forming or installing a heat dissipation pad or a heat dissipation connector combined with 22) can be easily performed by a person skilled in the art using an electrode pad or a power connector and a heat dissipation pad or a heat dissipation connector. Since it can be, description of their formation or installation is omitted.

As described above, according to the light emitting diode unit according to the above specific embodiments, the die is avoided in complicated manufacturing processes such as lead frame manufacturing, heat sink manufacturing, light emitting diode package manufacturing, printed circuit board manufacturing, and light emitting diode package mounting. Accumulating only bonding technology, wire bonding technology, and epoxy molding technology enables the PCB manufacturing plant to manufacture by simply adding die bonding, wire bonding, and epoxy molding to the PCB manufacturing technology, thereby greatly simplifying the manufacturing process. . As a result, the manufacturing cost can be significantly reduced.

In addition, according to the light emitting diode unit according to the above-described embodiments, the light emitting diode unit has a thickness of approximately two printed circuit boards, compared to a light emitting diode unit including a light emitting diode package, a printed circuit board, and a heat sink. The overall thickness can be significantly reduced, which makes it suitable for use in electronic devices requiring thinning.

In addition, according to the light emitting diode unit according to the above specific embodiments, a total of three heat conduction layers of the lower heat conduction layer of the upper substrate and the upper and lower heat conduction layers of the upper substrate serve as a conventional heat sink. Without proper heat dissipation is possible.

On the other hand, in the above specific embodiment is removed a separate heat sink, but if a more excellent heat dissipation effect is required may be used in combination with the light emitting diode unit according to the specific embodiments on the heat sink as needed. Of course.

On the other hand, the present invention is not limited to the above specific embodiments, it can be carried out by variously modified and modified within the scope not departing from the gist of the present invention. If such changes and modifications are included in the appended claims, of course, they belong to the present invention.

1A and 1B illustrate a plan view and a cross-sectional structure before processing of an upper substrate constituting a single light emitting diode unit according to a preferred embodiment of the present invention.

2A and 2B illustrate a plan view and a cross-sectional structure after opening of an upper substrate constituting a single light emitting diode unit according to a preferred embodiment of the present invention.

3A and 3B illustrate a planar and cross-sectional structure after plating of a reflective film on an opening surface of an upper substrate constituting a single light emitting diode unit according to a preferred embodiment of the present invention.

4A and 4B illustrate plan and cross-sectional structures of a lower substrate constituting a single light emitting diode unit according to a preferred embodiment of the present invention.

5A and 5B illustrate a plan view and a cross-sectional structure after opening a lower substrate constituting a single light emitting diode unit according to a preferred embodiment of the present invention and coating or plating a thermal conductive film on the opening surface.

6A and 6B illustrate plan and cross-sectional structures of a single light emitting diode unit according to a preferred embodiment of the present invention.

7A and 7B illustrate a plan view and a cross-sectional structure of a top substrate of an upper substrate constituting a light emitting diode array unit according to a preferred embodiment of the present invention.

8A and 8B illustrate a plan view and a cross-sectional structure after opening of the upper substrate constituting the LED array unit according to an exemplary embodiment of the present invention.

9A and 9B illustrate a planar and cross-sectional structure after plating of a reflective film on an opening surface of an upper substrate constituting a light emitting diode array unit according to a preferred embodiment of the present invention.

10A and 10B illustrate a plan view and a cross-sectional structure of a lower substrate constituting the LED array unit according to an exemplary embodiment of the present invention.

11A and 11B illustrate a plan view and a cross-sectional structure after opening a lower substrate constituting a light emitting diode array unit according to a preferred embodiment of the present invention and coating or plating a thermal conductive film on the opening surface.

12A and 12B illustrate a plan view and a cross-sectional structure of a light emitting diode array unit according to a preferred embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

10: upper substrate 12: lower thermal conductive layer

14: upper conductive layer 16: opening

16a: slope 18: reflective film

20: lower substrate 22: lower thermal conductive layer

24: upper thermal conductive layer 26: opening

30: adhesive layer 32: electrical conductive film

33: light emitting diode chip 34: bonding wire

35: epoxy molding

Claims (13)

An upper conductive layer formed of a positive electrode pattern and a negative electrode pattern is formed on an upper surface of the insulating substrate, and a thermal conductive layer is formed on the lower surface of the insulating substrate for a heat dissipation function. A first step of preparing an upper substrate having openings formed between the upper conductive layers serving as the negative electrode patterns; A second process of preparing a lower substrate having upper and lower thermal conductive layers formed on upper and lower surfaces of the insulating substrate for heat dissipation; A third step of adhering the upper substrate and the lower substrate through an adhesive layer; A fourth step of mounting a light emitting diode chip on the adhesive layer in the opening of the upper substrate; A fifth step of wire-bonding the N-type pad and the P-type pad of the light emitting diode chip to the upper conductive layer, wherein the upper electrode conductive layer becomes a positive electrode pattern and a negative electrode pattern; And a sixth step of epoxy molding the opening and the wire bonding portion of the upper substrate. The method of claim 1, The opening has an inclined surface in which the opening is narrowed toward the lower side, and a light reflecting film is plated on the inclined surface of the opening in the upper substrate in the first step. The method of claim 1, At least one opening is formed in the lower substrate in the second process, and the inner surface of the opening of the lower substrate is coated or plated with a material having excellent thermal conductivity so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. The manufacturing method of the light emitting diode unit characterized by the above-mentioned. The method of claim 1, At least one opening is formed in the lower substrate in the second process, and a material having excellent thermal conductivity is filled in the opening of the lower substrate so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. The manufacturing method of the light emitting diode unit. The method of claim 1, The method of manufacturing a light emitting diode unit, characterized in that the adhesive layer in the third step is made of an adhesive having excellent thermal conductivity. The method of claim 1, And in the fourth step, after applying an electric conductive film having excellent electrical conductivity onto the adhesive layer, mounting the light emitting diode chip on the coated electric conductive film. On the upper surface of the insulating substrate, a plurality of electrode patterns spaced apart at regular intervals, arranged in a row, a positive power wiring pattern connected to an electrode pattern at one end of the plurality of electrode patterns, and the other end of the plurality of electrode patterns An upper conductive layer formed of a negative power wiring pattern connected to an electrode pattern is formed, and a thermal conductive layer for heat dissipation is formed on a lower surface of the insulating substrate, and an upper substrate having openings formed between the adjacent electrode patterns is prepared. A first step; A second process of preparing a lower substrate having upper and lower thermal conductive layers formed on upper and lower surfaces of the insulating substrate for heat dissipation; A third step of adhering the upper substrate and the lower substrate through an adhesive layer; A fourth step of mounting a light emitting diode chip on the adhesive layer in the opening of the upper substrate; A fifth step of wire bonding the N-type pad of the light emitting diode chip to an adjacent one electrode pattern and wire bonding the P-type pad of the light emitting diode chip to an adjacent other electrode pattern; And a sixth step of epoxy molding the opening of the upper substrate and the wire bonding portion. The method of claim 7, wherein The opening has an inclined surface in which the opening is narrowed toward the lower side, and a light reflecting film is plated on the inclined surface of the opening in the upper substrate in the first step. The method of claim 7, wherein At least one opening is formed in the lower substrate in the second process, and the inner surface of the opening of the lower substrate is coated or plated with a material having excellent thermal conductivity so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. The manufacturing method of the light emitting diode unit characterized by the above-mentioned. The method of claim 7, wherein At least one opening is formed in the lower substrate in the second process, and a material having excellent thermal conductivity is filled in the opening of the lower substrate so that the upper thermal conductive layer and the lower thermal conductive layer are thermally conductive. The manufacturing method of the light emitting diode unit. The method of claim 7, wherein The method of manufacturing a light emitting diode unit, characterized in that the adhesive layer in the third step is made of an adhesive having excellent thermal conductivity. The method of claim 7, wherein And in the fourth step, after applying an electric conductive film having excellent electrical conductivity onto the adhesive layer, mounting the light emitting diode chip on the coated electric conductive film. The light emitting diode unit manufactured by the manufacturing method in any one of Claims 1-12.

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