TWI472067B - Optical package and method of manufacturing the same - Google Patents

Optical package and method of manufacturing the same Download PDF

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TWI472067B
TWI472067B TW99133993A TW99133993A TWI472067B TW I472067 B TWI472067 B TW I472067B TW 99133993 A TW99133993 A TW 99133993A TW 99133993 A TW99133993 A TW 99133993A TW I472067 B TWI472067 B TW I472067B
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layer
optical package
reflective layer
insulating layer
metal
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TW99133993A
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Chinese (zh)
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TW201138163A (en
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Jee Heum Paik
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Lg Innotek Co Ltd
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Priority claimed from KR1020100039715A external-priority patent/KR101129002B1/en
Priority claimed from KR1020100042044A external-priority patent/KR101136392B1/en
Priority claimed from KR1020100042045A external-priority patent/KR101146659B1/en
Priority claimed from KR1020100042047A external-priority patent/KR101146656B1/en
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Publication of TW201138163A publication Critical patent/TW201138163A/en
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Publication of TWI472067B publication Critical patent/TWI472067B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

Description

光學封裝及其製造方法Optical package and method of manufacturing same

本發明主張於2010年04月28日所申請之韓國專利申請案號10-2010-0039715、2010年05月04日所申請之韓國專利申請案號10-2010-0042047、2010年05月04日所申請之韓國專利申請案號10-2010-0042045與2010年05月04日所申請之韓國專利申請案號10-2010-0042044的優先權,此全文將併入本案以作為參考。The Korean Patent Application No. 10-2010-0039715, filed on Apr. 28, 2010, and the Korean Patent Application No. 10-2010-0042047, filed on May 4, 2010 Priority is claimed on Korean Patent Application No. 10-2010-0042045, filed on Jan. 4, 2010, the entire disclosure of which is hereby incorporated by reference.

本發明係關於一種光學封裝及其製造方法,特別是一種光學封裝和該光學封裝的製造方法,其可以減少封裝體積與厚度、增加整合性、以及改善亮度(luminance)與光效率(photoefficiency)。The present invention relates to an optical package and a method of fabricating the same, and more particularly to an optical package and a method of fabricating the same, which can reduce package volume and thickness, increase integration, and improve luminance and photoefficiency.

發光二極體(LED)是指一種金屬間化合物接面二極體,其使用半導體的P-N介面結構注入少數載子(例如電子或電洞)及藉由經過載子的再結合來改變電能成為光能而發出光。也就是說,當順向電壓施加到一特定元件的半導體時,電子和電洞經由正極與負極的接面而被移除然後再結合。當電子和電洞再結合時的能量小於當電子和電洞彼此分離時的能量。因此,因為能量上的差異,使LED發射出光線。LED不僅被用在一般的顯示裝置,而且被用在發光裝置或LCD的背光元件,且LED的應用逐漸廣泛。特別是LED具有的優勢在於可被相對的低電壓所驅動、由於高能源效應而產生較低的熱、以及具有較長的壽命。因此LED被期待能發展出過去難以達成的高亮度白光技術,而取代現有大多數的光源裝置。A light-emitting diode (LED) refers to an intermetallic compound junction diode that injects a minority carrier (eg, an electron or a hole) using a semiconductor PN interface structure and changes electrical energy by recombination through a carrier. Light can emit light. That is, when a forward voltage is applied to a semiconductor of a specific element, electrons and holes are removed and then recombined via the junction of the positive and negative electrodes. When the electrons and holes are recombined, the energy is smaller than when the electrons and holes are separated from each other. Therefore, because of the difference in energy, the LED emits light. LEDs are used not only in general display devices, but also in backlight elements of light-emitting devices or LCDs, and the application of LEDs has become widespread. In particular, LEDs have the advantage of being able to be driven by relatively low voltages, resulting in lower heat due to high energy effects, and having a longer lifetime. Therefore, LEDs are expected to develop high-brightness white light technology that was difficult to achieve in the past, and replace most of the existing light source devices.

圖1是根據習知技術之實施例的LED封裝的剖視圖。參照圖1,LED封裝的配置是經由導線102的帶電導線搭接到氮化鎵(GaN)化合物晶片發出光線,並經由下面的散熱裝置10釋出熱。再者,透過金屬導線引線搭接,電力可被提供到LED封裝至一外部支撐物和一LED封裝部分,如此LED封裝的配置得以發射出光線。上述的結構形成晶片60的封裝。1 is a cross-sectional view of an LED package in accordance with an embodiment of the prior art. Referring to FIG. 1, the LED package is configured to illuminate a gallium nitride (GaN) compound wafer via a live wire of the wire 102 and to dissipate heat through the heat sink 10 below. Furthermore, by wire bonding through the metal wires, power can be supplied to the LED package to an external support and an LED package portion such that the configuration of the LED package emits light. The above structure forms a package of the wafer 60.

上述習知的LED封裝形成導線架型之封裝型式。然而,因為低的可利用封裝區域,該導線架型因此難以與LED晶片整合。再者,當該導線架型被安置(mounted)在產品上時,因為晶片尺寸使封裝尺寸相對變大,導線架型將無可避免地會增加產品的外部面積或厚度。The above conventional LED package forms a lead frame type package type. However, this leadframe type is therefore difficult to integrate with LED chips because of the low available package area. Moreover, when the leadframe type is mounted on the product, the leadframe type will inevitably increase the outer area or thickness of the product because the wafer size makes the package size relatively large.

另外,習知LED封裝更需要在下面的散熱裝置來用以釋放從LED晶片產生的熱量,因此LED封裝的體積與厚度也將增加。In addition, the conventional LED package requires a heat sink below to release heat generated from the LED chip, and thus the volume and thickness of the LED package will also increase.

圖2是根據習知技術之另一實施例的LED封裝的剖視圖。2 is a cross-sectional view of an LED package in accordance with another embodiment of the prior art.

參閱圖2,於保護導線102的搭接之封裝製程中,在螢光物質和樹脂複合物塗佈後,使用一塑性透鏡25以使光產生線性與提高光效率。而這造成對於上述LED封裝縮小的限制與製程上成本的問題。Referring to FIG. 2, in the process of bonding the protective wires 102, after the phosphor material and the resin composite are coated, a plastic lens 25 is used to linearize the light and improve the light efficiency. This causes a problem of the limitation of the above-mentioned LED package reduction and the cost of the process.

因此,需要一種低成本、使尺寸更小和製程更簡單的技術來製造LED封裝。Therefore, there is a need for a low cost, smaller size, and simpler process to fabricate LED packages.

據此,本發明考量到上述的問題,所以本發明之一目的在於提供一種光學封裝及該種光學封裝之製造方法,其具有縮小光學封裝體積、減少最終產品之厚度和外部體積、以及賦予集成化與縮小尺寸之能力。再者,本發明的另一目的在於提供一種光學封裝及該種光學封裝之製造方法,其可以藉由一絕緣層而減少光的吸附與藉由鍍覆一金屬層而增加亮度和光效率、作為散熱裝置和支架、或鍍覆一光反射層和形成一白色反射層在該絕緣層的一上表面或表面上,或形成一金屬反射層和一電鍍層在該絕緣層的表面。Accordingly, the present invention has been made in view of the above problems, and it is therefore an object of the present invention to provide an optical package and a method of fabricating the same that have reduced optical package volume, reduced thickness and external volume of the final product, and integrated integration. The ability to reduce and reduce size. Furthermore, another object of the present invention is to provide an optical package and a method of fabricating the same that can reduce light absorption by an insulating layer and increase brightness and light efficiency by plating a metal layer. The heat sink and the bracket, or a light reflecting layer is plated and a white reflective layer is formed on an upper surface or surface of the insulating layer, or a metal reflective layer and a plating layer are formed on the surface of the insulating layer.

為達上述目的,根據本發明一實施例,一種光學封裝包含配置有一線路圖案的一金屬層、形成在該金屬層上並配置有多個孔道(holes)的一絕緣層、設置在其中一孔道上的一光學元件、配置來電性連結該光學元件和線路圖案的多個連接單元(connection units)、以及用以埋設(bury)該光學元件與該些連接單元之一樹脂單元。因此,使用膠片式(tape type)絕緣膜而不使用引線,光學封裝得以縮小尺寸與整合。To achieve the above object, according to an embodiment of the invention, an optical package includes a metal layer disposed with a line pattern, an insulating layer formed on the metal layer and provided with a plurality of holes, and a hole disposed therein An optical component, a plurality of connection units configured to electrically connect the optical component and the line pattern, and a resin unit for burying the optical component and the connection unit. Therefore, the optical package can be downsized and integrated using a tape type insulating film without using a lead.

特別是光學封裝更包含一反射層形成在該絕緣層的一表面的部份或整體表面上。因此,亮度和光效率可藉由該反射層而增加。In particular, the optical package further comprises a reflective layer formed on a portion or an integral surface of a surface of the insulating layer. Therefore, brightness and light efficiency can be increased by the reflective layer.

再者,最好該反射層是一白色反射層或一金屬層。Furthermore, it is preferred that the reflective layer be a white reflective layer or a metal layer.

再者,光學封裝可更包含一光反射層或一電鍍層形成在經由該些孔道而暴露出的金屬層。Furthermore, the optical package may further comprise a light reflecting layer or a plating layer formed on the metal layer exposed through the holes.

再者,最好反射層在絕緣層的側邊具有傾斜面,因此光可以向上反射。Further, it is preferable that the reflective layer has an inclined surface on the side of the insulating layer, so that light can be reflected upward.

再者,最好白色反射層掩埋(bury)絕緣層的側邊在10微米至100微米的厚度。Further, it is preferred that the white reflective layer bury the sides of the insulating layer to a thickness of from 10 micrometers to 100 micrometers.

再者,白色反射層可藉由印刷銀膠(silver paste)、白色拒焊(soler resist)和白色樹脂的其中一種而形成。Further, the white reflective layer can be formed by printing one of a silver paste, a white solder resist, and a white resin.

再者,最好金屬反射層包含銀(Ag)、鎳(Ni)、銅(Cu)、鉑(Pt)、鈀(Pd)和金(Au)的至少一種。Further, it is preferable that the metal reflective layer contains at least one of silver (Ag), nickel (Ni), copper (Cu), platinum (Pt), palladium (Pd), and gold (Au).

再者,最好光反射層或電鍍層更可形成在具有絕緣層堆疊於其上的金屬層的另一面。Further, it is preferable that the light reflecting layer or the plating layer be formed on the other side of the metal layer having the insulating layer stacked thereon.

再者,光反射層可含銀(Ag)或電鍍層包含銀(Ag)、鎳(Ni)、銅(Cu)、鉑(Pt)、鈀(Pd)和金(Au)的至少一種。Further, the light reflecting layer may contain silver (Ag) or the plating layer may contain at least one of silver (Ag), nickel (Ni), copper (Cu), platinum (Pt), palladium (Pd), and gold (Au).

再者,最好金屬層為一銅層或絕緣層為一聚亞醯胺(polyimide)膜。Further, it is preferable that the metal layer is a copper layer or the insulating layer is a polyimide film.

再者,樹脂單元具有一凸鏡形和包含一螢光物質與一透明樹脂。Further, the resin unit has a convex mirror shape and contains a fluorescent substance and a transparent resin.

再者,最好透明樹脂由矽(Si)所製成。Further, it is preferred that the transparent resin be made of bismuth (Si).

根據本發明一實施例的一種光學封裝的製造方法包含以下步驟:(a)在一絕緣層形成多個孔道(holes);(b)壓合一金屬層於該絕緣層下方及在該金屬層形成一線路圖案;(c)安置(mounting)一光學單元在該些孔道中的一孔道及經由多個連接單元電性連接該光學元件和該線路圖案;以及(d)形成用以掩埋該光學單元和該些連接單元的一樹脂單元。A method of fabricating an optical package according to an embodiment of the invention comprises the steps of: (a) forming a plurality of holes in an insulating layer; (b) pressing a metal layer under the insulating layer and in the metal layer Forming a line pattern; (c) mounting an optical unit in a hole in the holes and electrically connecting the optical element and the line pattern via a plurality of connecting units; and (d) forming to bury the optical a unit and a resin unit of the connecting units.

特別是光學封裝可更包含在步驟(b)後形成一反射層在該絕緣層的一表面的部分或整個表面的步驟(b’)。In particular, the optical package may further comprise the step (b') of forming a reflective layer on a portion or the entire surface of a surface of the insulating layer after the step (b).

再者,最好步驟(b’)包含形成一白色反射層或一金屬反射層。Further, preferably, the step (b') comprises forming a white reflective layer or a metallic reflective layer.

再者,該方法可更包含在步驟(b)後,形成一光反射層在經由該孔道而曝露出的該金屬層的步驟(b-1)。Furthermore, the method may further comprise the step (b-1) of forming a light reflecting layer exposed to the metal layer through the via after the step (b).

再者,該方法可更包含在步驟(b)後,形成一電鍍層在經由該孔道而曝露出的該金屬層的步驟(b-2)。Furthermore, the method may further comprise the step (b-2) of forming a plating layer exposed to the metal layer via the via after the step (b).

再者,最好步驟(b-1)更包含形成該光反射層在具有絕緣層堆疊於其上的一面。Furthermore, it is preferred that the step (b-1) further comprises forming a side of the light reflecting layer on which the insulating layer is stacked.

再者,最好步驟(b-2)更包含形成一電鍍層在具有絕緣層堆疊於其上的一面。Further, preferably, the step (b-2) further comprises forming a plating layer on a side having the insulating layer stacked thereon.

依照本發明,根據藉由使用一帶基板(tape substrate)的現有導線架形成的一封裝,封裝的整個體積與厚度可以縮小。再者,具有高度整合的封裝可藉由在一點發射法(dot-emitting method)形成一表面發射法(surface emitting method)的一封裝來產生。此外,成本可以降低、製程可簡化、以及生產力可藉由同時執行一封裝程序和形成一透鏡形狀的程序來改善。亮度和光效率可經由形成在一絕緣層的表面的一鍍覆(plated)的光反射層和一鍍覆(plated)的白色反射層或一金屬反射層和一電鍍層來改善。According to the present invention, the entire volume and thickness of the package can be reduced in accordance with a package formed by using an existing lead frame of a tape substrate. Furthermore, a highly integrated package can be produced by forming a package of a surface emitting method in a dot-emitting method. In addition, the cost can be reduced, the process can be simplified, and productivity can be improved by simultaneously executing a package process and forming a lens-shaped program. Brightness and light efficiency can be improved via a plated light reflecting layer and a plated white reflective layer or a metal reflective layer and a plating layer formed on the surface of an insulating layer.

以下,本發明實施例將伴隨圖示加以說明。然而,本發明可加以修改成不同形式,且實施例不應用以限制本發明。本發明實施例是用以提供給熟知此技藝者作為說明,因此,為用以說明,圖示或元件形狀被加以放大,且相同的元件符號在圖示中代表相同元件。Hereinafter, embodiments of the invention will be described with reference to the drawings. However, the invention may be modified in various forms, and the embodiments are not intended to limit the invention. The embodiments of the present invention are intended to be illustrative, and thus, in order to illustrate, FIG.

圖3為一剖視圖顯示根據習知技術一實施例的LED封裝與根據本發明一實施例的光學封裝之比較,圖4至圖6為顯示根據本發明另一實施例的光學封裝的剖視圖。3 is a cross-sectional view showing a comparison of an LED package according to an embodiment of the prior art with an optical package according to an embodiment of the present invention, and FIGS. 4 to 6 are cross-sectional views showing an optical package according to another embodiment of the present invention.

如圖3所示,在本發明的封裝結構中,包含多個孔道的一絕緣層110形成在其上具有線路圖案的一金屬層120。該結構更包含設置在該些孔道的一光學元件150、配置來電性連接光學元件150和該線路圖案的多個連接單元160、以及配置來掩埋光學元件150和該些連接單元160的一樹脂單元170。一白色反射層130(例如一反射層)是形成在絕緣層110的一上表面。最好一光反射層140被鍍覆在經由該些孔道而暴露出的金屬層120上。在此,最好絕緣層110是一種聚亞醯胺膜而金屬層120是由銅(Cu)所製成。在本發明,白色反射層130形成在絕緣層110的上表面。最好白色反射層130是藉由印刷銀膠(silver paste)、白色防焊(solder resist)、及白色環氧樹脂的其中一種所形成。As shown in FIG. 3, in the package structure of the present invention, an insulating layer 110 including a plurality of cells is formed with a metal layer 120 having a wiring pattern thereon. The structure further includes an optical element 150 disposed in the holes, a plurality of connection units 160 configured to electrically connect the optical elements 150 and the line pattern, and a resin unit configured to bury the optical element 150 and the connection units 160 170. A white reflective layer 130 (e.g., a reflective layer) is formed on an upper surface of the insulating layer 110. Preferably, a light reflecting layer 140 is plated on the metal layer 120 exposed through the holes. Here, it is preferable that the insulating layer 110 is a polyimide film and the metal layer 120 is made of copper (Cu). In the present invention, the white reflective layer 130 is formed on the upper surface of the insulating layer 110. Preferably, the white reflective layer 130 is formed by printing one of a silver paste, a white solder resist, and a white epoxy.

一般聚亞醯胺有棕色或黃系列顏色。然聚亞醯胺因為其吸附光而非反射光而造成低亮度的問題。因此,非一綠色系列的防焊的白色反射層130形成在絕緣層110的上表面以用來增加亮度。為了更增加亮度,白色反射層130可不僅形成在絕緣層110的表面(例如上表面),更可形成在絕緣層110的多個側邊如圖4或5所示。最好絕緣層110的側邊被掩埋在10微米至100微米的厚度。白色反射層130在絕緣層110的側邊具有傾斜面,因此從光學元件150產生的光可以被較好的向上反射如圖5所示。但是,介於絕緣層110側邊和白色反射層傾斜面的底部表面的距離(如圖5中的X)最好為10微米至100微米。如上所述,從光學元件150產生的光,藉由白色反射層130的傾斜面被向上反射,因而能夠增加光效率。白色反射層130作為一反射層而增加光效率。再者,當樹脂單元170接續形成後,白色反射層130作為一阻隔壁(barrier rib)及用來間隔邊界。Generally, polyammonium has a brown or yellow color. However, polybendamine causes a problem of low brightness because it absorbs light instead of reflecting light. Therefore, a non-green series solder resist white reflective layer 130 is formed on the upper surface of the insulating layer 110 for increasing the brightness. In order to further increase the brightness, the white reflective layer 130 may be formed not only on the surface (for example, the upper surface) of the insulating layer 110 but also on the plurality of sides of the insulating layer 110 as shown in FIG. 4 or 5. Preferably, the sides of the insulating layer 110 are buried at a thickness of from 10 micrometers to 100 micrometers. The white reflective layer 130 has an inclined surface on the side of the insulating layer 110, so that light generated from the optical element 150 can be better reflected upward as shown in FIG. However, the distance (such as X in Fig. 5) between the side of the insulating layer 110 and the bottom surface of the inclined surface of the white reflective layer is preferably from 10 μm to 100 μm. As described above, the light generated from the optical element 150 is reflected upward by the inclined surface of the white reflective layer 130, so that the light efficiency can be increased. The white reflective layer 130 acts as a reflective layer to increase light efficiency. Furthermore, after the resin unit 170 is successively formed, the white reflective layer 130 acts as a barrier rib and serves as a spacer boundary.

再者,光反射層140可從沒有形成白色反射層130的金屬層120被鍍覆到經由該些孔道而被暴露出的金屬層120上。如所示,最好光反射層140被鍍覆到堆疊絕緣層110的金屬層120的另一面。最好光反射層140的鍍覆為銀(Ag)或包含銀的鍍覆。Furthermore, the light reflecting layer 140 may be plated from the metal layer 120 where the white reflective layer 130 is not formed onto the metal layer 120 exposed through the holes. As shown, preferably, the light reflecting layer 140 is plated to the other side of the metal layer 120 of the stacked insulating layer 110. Preferably, the plating of the light reflecting layer 140 is silver (Ag) or plating containing silver.

如上所述,不是以金鍍覆(gold plating)作為打線接合(wire bonding)而是形成包含銀的光反射層140。因此,亮度被改善、導熱率(thermal conductivity)進而增加、以及根據從光學元件所產生的熱之散熱效應也因此增加。接續,反射率(reflexibility)也可以被增加、光的吸附也可以被防止、以及光效率可被最大化。因此,在本發明,最好一LED晶片(例如光學元件150)被安置在光反射層140上、而電性連結介於晶片與線路圖案的多條金線(例如連接單元)被搭接(bonded)、以及使用樹脂單元170將LED晶片和該些金線被掩埋於內的一種帶狀型的LED封裝型式可被執行。最好樹脂單元170有一凸鏡形及包含螢光物質與透明樹脂,而透明樹脂為矽(Si)所製成。如上所述,本發明可實現整合的光學封裝並經由膜型的絕緣膜110而減少尺寸大小,以及沒有使用一在下面的散熱裝置和一金屬導線部分的線路圖案層121。再者,線路圖案層121形成在絕緣層110下方,以及線路圖案層121不僅作為一線路板而且為一散熱裝置。再者,打線接合(wire bonding)具有一效應在於因為根據一表面粗糙度在RZ是不同的,因此搭接強度(bonding strength)是相當良好的。As described above, the gold reflective layer 140 containing silver is not formed by gold plating as gold bonding. Therefore, the brightness is improved, the thermal conductivity is further increased, and the heat dissipation effect according to the heat generated from the optical element is also increased. Succession, reflexibility can also be increased, light adsorption can be prevented, and light efficiency can be maximized. Therefore, in the present invention, it is preferable that an LED chip (for example, the optical element 150) is disposed on the light reflecting layer 140 and electrically connected to a plurality of gold wires (for example, connecting units) interposed between the wafer and the line pattern. Bonded), and a strip-type LED package pattern in which the LED wafer and the gold wires are buried using the resin unit 170 can be performed. Preferably, the resin unit 170 has a convex mirror shape and contains a fluorescent substance and a transparent resin, and the transparent resin is made of bismuth (Si). As described above, the present invention can realize an integrated optical package and reduce the size via the film-type insulating film 110, and does not use a wiring pattern layer 121 of a lower heat sink and a metal wire portion. Furthermore, the wiring pattern layer 121 is formed under the insulating layer 110, and the wiring pattern layer 121 serves not only as a wiring board but also as a heat sink. Furthermore, wire bonding has an effect in that the bonding strength is quite good because the RZ is different according to a surface roughness.

圖6為根據本發明另一實施例的光學封裝的剖視圖。參閱圖6,在本發明的封裝結構,具有形成線路圖案的一金屬層120存在於具有形成多個孔道的一絕緣層110下方。再者,一金屬反射層135形成在絕緣層110的表面,及一電鍍層145形成在金屬反射層135和經由孔道而暴露出的金屬層120。最好絕緣層110為一聚亞醯胺膜。同時最好金屬層120為一銅層。再者,在本發明,如上所述,金屬反射層135形成在絕緣層的表面(例 如頂面和側邊)。最好金屬反射層135為藉由塗佈一導電膠(conductive paste),例如銀(Ag)、鎳(Ni)、銅(Cu)、鈀(Pd)、鉑(Pt)、金(Au)或碳(carbon)所被印製。最佳的是金屬反射層135為藉由塗佈從導電膠中的銀膠被印製。一般聚醯亞胺有棕色或黃系列顏色。然聚醯亞胺因為其吸附光而非反射光而造成低亮度的問題。為此原因,金屬反射層135和電鍍層145不僅形成在絕緣層110的上表面,而且形成在其多個側邊。如此,因絕緣層110造成的光的吸附得以減少,且光效率得以增加。最好形成金屬反射層135,因此絕緣層110被埋入在一直角(right angle)而形成一阻隔壁形狀,但因此阻隔壁在絕緣層110的多個側邊具有一角度(亦即一傾斜面),如圖6所示。因此,從一光學元件150產生的光經由金屬反射層135的傾斜面得以藉由該傾斜面向上反射,因此,具有增加光效率的能力。再者,如上所述的電鍍層145可被形成在金屬反射層135和經由該些孔道而暴露出的金屬層120。最好,如圖6所示,電鍍層145被鍍覆在具有絕緣層110堆疊於上的金屬層120的一面。最好電鍍層145為由銀(Ag)、鎳(Ni)、銅(Cu)、鈀(Pd)、鉑(Pt)、和金(Au)的至少一種所形成。如上所述,不是以金鍍覆(gold plating)作為打線接合(wire bonding)而是形成由銀(Ag)、鎳(Ni)、銅(Cu)、鈀(Pd)、鉑(Pt)、或金(Au)的電鍍層145。因此,亮度被改善、導熱率(thermal conductivity)進而增加、以及根據從LED晶片所產生的熱之散熱效應也因此增加。結果反射率得以增加、光的吸附得以避 免、以及光效率得以最大化。6 is a cross-sectional view of an optical package in accordance with another embodiment of the present invention. Referring to FIG. 6, in the package structure of the present invention, a metal layer 120 having a wiring pattern is formed under an insulating layer 110 having a plurality of holes. Further, a metal reflective layer 135 is formed on the surface of the insulating layer 110, and a plating layer 145 is formed on the metal reflective layer 135 and the metal layer 120 exposed through the via. Preferably, the insulating layer 110 is a polyimide film. At the same time, it is preferred that the metal layer 120 be a copper layer. Furthermore, in the present invention, as described above, the metal reflective layer 135 is formed on the surface of the insulating layer (for example) Such as top and side). Preferably, the metal reflective layer 135 is coated with a conductive paste such as silver (Ag), nickel (Ni), copper (Cu), palladium (Pd), platinum (Pt), gold (Au) or Carbon is printed. Most preferably, the metal reflective layer 135 is printed by coating silver paste from the conductive paste. Generally, polyimine has a brown or yellow color. However, polyimine has a problem of low brightness because it absorbs light instead of reflecting light. For this reason, the metal reflective layer 135 and the plating layer 145 are formed not only on the upper surface of the insulating layer 110 but also on the plurality of sides thereof. Thus, the adsorption of light by the insulating layer 110 is reduced, and the light efficiency is increased. Preferably, the metal reflective layer 135 is formed, so that the insulating layer 110 is buried at a right angle to form a barrier wall shape, but therefore the barrier walls have an angle (i.e., a tilt) on a plurality of sides of the insulating layer 110. Face), as shown in Figure 6. Therefore, light generated from an optical element 150 is reflected upward by the inclined surface of the metal reflective layer 135, and thus has an ability to increase light efficiency. Further, the plating layer 145 as described above may be formed on the metal reflective layer 135 and the metal layer 120 exposed through the holes. Preferably, as shown in FIG. 6, a plating layer 145 is plated on one side of the metal layer 120 having the insulating layer 110 stacked thereon. Preferably, the plating layer 145 is formed of at least one of silver (Ag), nickel (Ni), copper (Cu), palladium (Pd), platinum (Pt), and gold (Au). As described above, gold plating is not used as wire bonding but is formed of silver (Ag), nickel (Ni), copper (Cu), palladium (Pd), platinum (Pt), or Gold (Au) plating layer 145. Therefore, the brightness is improved, the thermal conductivity is further increased, and the heat dissipation effect according to the heat generated from the LED wafer is also increased. As a result, the reflectance is increased and the absorption of light is avoided. Free and maximize light efficiency.

在圖6中的光學元件150、多個連接單元160、以及一樹脂單元170和圖3相同,因此將省略說明。The optical element 150, the plurality of connection units 160, and a resin unit 170 in Fig. 6 are the same as those in Fig. 3, and thus the description thereof will be omitted.

圖7為根據本發明一實施例的光學封裝之聚醯亞胺表面和線路圖案單元的一俯視圖。如圖7所示,本發明之光學封裝在整合的程度上相較傳統LED封裝的俯視圖具有優越性(參照圖3右邊的圖形)。7 is a top plan view of an optically encapsulated polyimide surface and line pattern unit in accordance with an embodiment of the present invention. As shown in FIG. 7, the optical package of the present invention is superior to the top view of the conventional LED package in terms of integration (refer to the figure on the right side of FIG. 3).

圖8和圖9為根據本發明另一實施例的光學封裝的製造過程剖視圖。參閱圖8和9,首先,孔道115和116經由衝孔(punching)S2,P2而形成在絕緣層110。最好絕緣層110為一聚醯亞胺膜。孔道115和116包含一裝置孔(device hole)115(例如將放置光學元件地方的中央孔)和多個孔道(via hole)116,導線(例如連接單元160)經由孔道116被連接以提供電源到光學元件。8 and 9 are cross-sectional views showing a manufacturing process of an optical package in accordance with another embodiment of the present invention. Referring to Figures 8 and 9, first, the channels 115 and 116 are formed in the insulating layer 110 via punching S2, P2. Preferably, the insulating layer 110 is a polyimide film. The channels 115 and 116 include a device hole 115 (e.g., a central hole where the optical component will be placed) and a plurality of via holes 116 through which wires (e.g., connection unit 160) are connected to provide power to Optical element.

接續,金屬層120被壓合S3,P3。最好金屬層由銅所製成。接著,經由數道化學處理而使一表面活化,一光阻被塗佈在該表面,以及進行曝光與顯影製程。在完成顯影製程之後,透過蝕刻製程形成所需的線路及將光阻脫落,因此形成線路圖案層121。之後,白色反射層130形成在除了用以搭接(bonding)的表面和用以提供外部電源的孔道外的絕緣層110上S4。Subsequently, the metal layer 120 is pressed into S3, P3. Preferably the metal layer is made of copper. Next, a surface is activated by a number of chemical treatments, a photoresist is applied to the surface, and an exposure and development process is performed. After the development process is completed, the desired wiring is formed through the etching process and the photoresist is removed, thereby forming the wiring pattern layer 121. Thereafter, a white reflective layer 130 is formed on the insulating layer 110 except for the surface for bonding and the via for providing an external power source.

通常,聚醯亞胺為電性穩定,但問題在於其有不佳的反射率,因為它棕色或黃色系列顏色造成低的光效率。光效率可藉 由從白色反射層130加入顏色而增加。最好白色反射層130藉由塗佈銀膠、白色防焊、及非一般綠色系列防焊的白色環氧樹脂的其中一種所印製。In general, polyimine is electrically stable, but the problem is that it has poor reflectivity because its brown or yellow series of colors causes low light efficiency. Light efficiency can be borrowed It is increased by adding color from the white reflective layer 130. Preferably, the white reflective layer 130 is printed by one of a silver paste, a white solder mask, and a non-general green series solder resist white epoxy.

最好白色反射層130不僅形成在絕緣層110的頂部表面,而且形成在絕緣層110的多個側邊,如圖9所示,以改善亮度和光效率P4。當白色反射層130掩埋絕緣層110的多個側邊在10微米至100微米的厚度時,能最有效增加亮度和光效率。特別是,雖然絕緣層110可被埋入如圖4所示之在一直角而形成一阻隔壁形狀,最好傾斜面被形成在絕緣層110的側邊,因此從光學元件產生的光可如圖9所示朝上反射。最好介於絕緣層110的側邊和白色反射層130的傾斜面的一底部表面(例如在圖9的X)的一距離為10微米至100微米。Preferably, the white reflective layer 130 is formed not only on the top surface of the insulating layer 110 but also on a plurality of sides of the insulating layer 110 as shown in FIG. 9 to improve brightness and light efficiency P4. When the white reflective layer 130 buryes a plurality of sides of the insulating layer 110 at a thickness of 10 micrometers to 100 micrometers, brightness and light efficiency can be most effectively increased. In particular, although the insulating layer 110 can be buried in a shape of a barrier wall at a right angle as shown in FIG. 4, it is preferable that the inclined surface is formed on the side of the insulating layer 110, so that light generated from the optical element can be as Figure 9 shows the upward reflection. Preferably, a distance between a side of the insulating layer 110 and a bottom surface of the inclined surface of the white reflective layer 130 (e.g., X in Fig. 9) is from 10 micrometers to 100 micrometers.

接著,透過表面處理,可藉由鍍覆(plating)經由孔道115和116而暴露出的金屬層120而形成光反射層140,因此金屬層120可被連結(bonded)S5,P5。這裡,最好光反射層140也被鍍覆在一線路面(例如金屬層120堆疊有絕緣層110的一面)如圖所示。再者,最好光反射層140的鍍覆(plating)是以銀或包含銀的鍍覆。由於上述不是執行金鍍覆(gold plating)而是銀鍍覆(silver plating),被絕緣層110所吸收的光得以被減少,且光效率得以增加。Next, through the surface treatment, the light reflecting layer 140 can be formed by plating the metal layer 120 exposed through the holes 115 and 116, and thus the metal layer 120 can be bonded to S5, P5. Here, it is preferable that the light reflecting layer 140 is also plated on a wiring surface (for example, the side of the metal layer 120 on which the insulating layer 110 is stacked) as shown. Further, it is preferable that the plating of the light reflecting layer 140 is plating with silver or silver. Since the above is not performed by gold plating but silver plating, light absorbed by the insulating layer 110 is reduced, and light efficiency is increased.

接著,經由晶粒接合(die bonding),光學元件150被安置在形成於絕緣層110的孔道(via hole)的光反射層140之光學元件150設置處S6,P6。最好使用黏著劑來安置光學元件 150(例如LED晶片)。接著,多條金線被搭接到鍍覆銀的光反射層140,藉此電性連結線路圖案層121和LED晶片150 S7,P7。接著,樹脂單元170被形成用來埋設LED晶片150和該些金線S8,P8。更特別的是一透鏡型的樹脂單元藉由過度地塗佈用於白色LED的一螢光物質和一透明樹脂在白色防焊的邊界部份,從而完成光學封裝。假使螢光物質和透明樹脂是過度的塗佈,透鏡型的樹脂單元170則因為表面張力而被形成,如圖所示。因此,封裝程序與形成塑性的透鏡的程序可同時執行。Next, via the die bonding, the optical element 150 is disposed at the optical element 150 of the light reflecting layer 140 formed in the via hole of the insulating layer 110 at the places S6, P6. It is best to use an adhesive to place the optics 150 (eg LED chip). Next, a plurality of gold wires are bonded to the silver-plated light-reflecting layer 140, thereby electrically connecting the wiring pattern layer 121 and the LED wafers 150 S7, P7. Next, the resin unit 170 is formed to embed the LED wafer 150 and the gold wires S8, P8. More specifically, a lens type resin unit completes optical packaging by excessively coating a phosphor material for a white LED and a transparent resin at a boundary portion of a white solder resist. In the case where the fluorescent substance and the transparent resin are excessively coated, the lens type resin unit 170 is formed due to the surface tension as shown. Therefore, the encapsulation process and the process of forming a plastic lens can be performed simultaneously.

圖10為根據本發明另一實施例的光學封裝的製造過程剖視圖。在圖10的步驟Q1到Q3和Q6到Q8與步驟S1(P1)到S3(P3)和S6(P6)到S8(P8)為相似步驟,因此主要僅描述Q4和Q5的差異。首先,孔道(holes)115和116藉由衝壓Q2形成於絕緣層110。金屬層120被壓合以形成線路圖案層121 Q3。Figure 10 is a cross-sectional view showing a manufacturing process of an optical package in accordance with another embodiment of the present invention. Steps Q1 to Q3 and Q6 to Q8 of Fig. 10 are similar steps to steps S1(P1) to S3(P3) and S6(P6) to S8(P8), so only the differences of Q4 and Q5 are mainly described. First, holes 115 and 116 are formed on the insulating layer 110 by stamping Q2. The metal layer 120 is pressed to form the wiring pattern layer 121 Q3.

接著,金屬反射層135(例如一反射層)形成在整個絕緣層110的部份Q4。最好金屬反射層135為藉由塗佈一導電膠,例如銀、鎳、銅、鈀、鉑、金或碳(carbon)所被印製。最好金屬反射層135是藉由塗佈銀膠所印製。雖然絕緣層110可被埋設成一直角以形成一阻隔壁形式,但最好絕緣層110的側邊形成傾斜面,因此從光學元件150產生的光為向上反射,如圖10所示。接著,電鍍層145形成在金屬反射層135和經由孔道115和116而暴露出的金屬層120,並經表面處理而得以連結(bonded)Q5。這裡,最好電鍍層145也同樣形成在一線路 面(例如具有絕緣層110堆疊於其上的金屬層120的一面)如圖10所示。再者,最好電鍍層145由銀、鎳、銅、鈀、鉑、或金所製成。通常,聚醯亞胺為電性穩定,但問題在於其有不佳的反射率,因為它棕色或黃色系列顏色造成低的光效率。因此,如果如本發明塗佈銀膠,聚醯亞胺區域將消失,輝度(brillance)將經由如上所述之電鍍層145而增加,以及光效應可更加增加。接在步驟Q6後的步驟相似於如上所述之圖8和9,因此將省略描述。Next, a metal reflective layer 135 (eg, a reflective layer) is formed over portion Q4 of the entire insulating layer 110. Preferably, the metal reflective layer 135 is printed by coating a conductive paste such as silver, nickel, copper, palladium, platinum, gold or carbon. Preferably, the metallic reflective layer 135 is printed by coating silver paste. Although the insulating layer 110 may be buried at right angles to form a barrier wall, it is preferable that the side edges of the insulating layer 110 form an inclined surface, so that light generated from the optical element 150 is reflected upward, as shown in FIG. Next, a plating layer 145 is formed on the metal reflective layer 135 and the metal layer 120 exposed through the vias 115 and 116, and is surface-bonded to bond Q5. Here, it is preferable that the plating layer 145 is also formed on a line. A face (for example, one side of the metal layer 120 having the insulating layer 110 stacked thereon) is as shown in FIG. Further, it is preferable that the plating layer 145 is made of silver, nickel, copper, palladium, platinum, or gold. In general, polyimine is electrically stable, but the problem is that it has poor reflectivity because its brown or yellow series of colors causes low light efficiency. Therefore, if the silver paste is coated as in the present invention, the polyimine region will disappear, the brillance will increase via the plating layer 145 as described above, and the light effect can be further increased. The steps following step Q6 are similar to those of Figs. 8 and 9 as described above, and thus the description will be omitted.

圖11為根據習知技術與根據本發明顯示詳細的光學封裝的整合程度的一剖視圖與一俯視圖。從圖11中,可清楚看出假使LED封裝形成在相同區域,相較於LED晶片其配置有金屬引線20和下方散熱器10(參考圖3和圖11左側的圖示),本發明可形成有較大數量的LED封裝(參考圖11右側的圖示)。Figure 11 is a cross-sectional and top plan view showing the degree of integration of a detailed optical package in accordance with the teachings of the present invention. From Fig. 11, it can be clearly seen that if the LED package is formed in the same area, the present invention can be formed as compared with the LED wafer in which the metal lead 20 and the lower heat sink 10 are disposed (refer to the illustration on the left side of Figs. 3 and 11). There is a larger number of LED packages (refer to the illustration on the right side of Figure 11).

最適實施例已經由圖示與說明而揭露。雖然使用特定名稱,但其僅用來描述本發明而不應該用來限定本發明權利宣告的意義與範圍。因此,熟知此技藝者可從上述實施例得以瞭解並作各種的修飾以及其他等同實施例。因此,本發明的真實技術範圍應藉由附加的權利宣告所定義。The preferred embodiment has been disclosed by way of illustration and description. Although a specific name is used, it is only used to describe the invention and should not be used to limit the meaning and scope of the claims of the invention. Thus, it will be apparent to those skilled in the <RTIgt; Therefore, the true technical scope of the present invention should be defined by the appended claims.

10‧‧‧散熱裝置10‧‧‧heating device

20‧‧‧金屬引線20‧‧‧Metal lead

25‧‧‧塑性透鏡25‧‧‧Plastic lens

60‧‧‧晶片60‧‧‧ wafer

102‧‧‧導線102‧‧‧ wire

110‧‧‧絕緣層110‧‧‧Insulation

115、116‧‧‧孔道115, 116‧‧ ‧ tunnel

120‧‧‧金屬層120‧‧‧metal layer

121‧‧‧線路圖案層121‧‧‧Line pattern layer

130‧‧‧白色反射層130‧‧‧White reflective layer

135‧‧‧金屬反射層135‧‧‧Metal reflector

140‧‧‧光反射層140‧‧‧Light reflection layer

145‧‧‧電鍍層145‧‧‧Electroplating

150‧‧‧光學元件150‧‧‧Optical components

160‧‧‧連接單元160‧‧‧ Connection unit

170‧‧‧樹脂單元170‧‧‧Resin unit

X‧‧‧距離X‧‧‧ distance

S1~S8‧‧‧步驟S1~S8‧‧‧Steps

P1~P8‧‧‧步驟P1~P8‧‧‧ steps

Q1~Q8‧‧‧步驟Q1~Q8‧‧‧Steps

圖1為根據習知技術的一實施例的一LED封裝的剖視圖;圖2為根據習知技術的另一實施例的一LED封裝的剖視圖; 圖3為剖視圖顯示根據習知技術一實施例的LED封裝與根據本發明一實施例的光學封裝之比較;圖4至圖6為顯示根據本發明另一實施例的光學封裝的剖視圖;圖7為根據本發明一實施例的光學封裝之聚醯亞胺表面和線路圖案單元的一俯視圖;圖8為繪示根據本發明一實施例的光學封裝的製造過程剖視圖;圖9和10繪示根據本發明另一實施例的光學封裝的製造過程剖視圖;以及圖11為根據習知技術與根據本發明顯示詳細的光學封裝的整合程度的一剖視圖與一俯視圖。1 is a cross-sectional view of an LED package in accordance with an embodiment of the prior art; FIG. 2 is a cross-sectional view of an LED package in accordance with another embodiment of the prior art; 3 is a cross-sectional view showing a comparison of an LED package according to an embodiment of the prior art with an optical package according to an embodiment of the present invention; and FIGS. 4 to 6 are cross-sectional views showing an optical package according to another embodiment of the present invention; FIG. 8 is a cross-sectional view showing a manufacturing process of an optical package according to an embodiment of the present invention; FIG. 9 is a cross-sectional view showing a manufacturing process of an optical package according to an embodiment of the present invention; FIG. A cross-sectional view of a manufacturing process of an optical package according to another embodiment of the present invention; and FIG. 11 is a cross-sectional view and a plan view showing the degree of integration of a detailed optical package according to the present invention.

110...絕緣層110. . . Insulation

120...金屬層120. . . Metal layer

130...白色反射層130. . . White reflective layer

140...光反射層140. . . Light reflection layer

150...光學元件150. . . Optical element

160...連接單元160. . . Connection unit

170...樹脂單元170. . . Resin unit

Claims (17)

一種光學封裝,包含一金屬層形成有一線路圖案;一絕緣層形成在該金屬層上和配置有多個孔道;一光學元件安置在該些孔道中之一;多個連接單元配置來電性連結該光學元件和該線路圖案;一反射層形成在該絕緣層之至少一側面上;一電鍍層形成在經由該些孔道而暴露出的該金屬層上以及在該反射層上;以及一樹脂單元配置來埋設該光學元件和該些連接單元。 An optical package comprising a metal layer formed with a line pattern; an insulating layer formed on the metal layer and configured with a plurality of holes; an optical component disposed in one of the holes; and a plurality of connecting units configured to electrically connect the wire An optical element and the wiring pattern; a reflective layer formed on at least one side of the insulating layer; a plating layer formed on the metal layer exposed through the holes and on the reflective layer; and a resin unit configuration The optical component and the connecting units are buried. 如申請專利範圍第1項所述之光學封裝,其中該反射層更加形成在該絕緣層的一上表面上。 The optical package of claim 1, wherein the reflective layer is further formed on an upper surface of the insulating layer. 如申請專利範圍第2項所述之光學封裝,其中該反射層為一白色反射層或一金屬反射層。 The optical package of claim 2, wherein the reflective layer is a white reflective layer or a metal reflective layer. 如申請專利範圍第2項所述之光學封裝,其中該反射層具有傾斜面在該絕緣層的側邊,使得光向上反射。 The optical package of claim 2, wherein the reflective layer has an inclined surface on a side of the insulating layer such that light is reflected upward. 如申請專利範圍第3項所述之光學封裝,其中該白色反射層掩埋該絕緣層的側邊在10微米至100微米的一厚度。 The optical package of claim 3, wherein the white reflective layer buryes a side of the insulating layer at a thickness of from 10 micrometers to 100 micrometers. 如申請專利範圍第3項所述之光學封裝,其中該白色反射層藉由印刷銀膠、白色拒焊、和白色樹脂的其中一種而形成。 The optical package of claim 3, wherein the white reflective layer is formed by one of printing silver paste, white solder resist, and white resin. 如申請專利範圍第3項所述之光學封裝,其中該金屬反射層包含銀、鎳、銅、鉑、鈀和金的至少一種。 The optical package of claim 3, wherein the metal reflective layer comprises at least one of silver, nickel, copper, platinum, palladium, and gold. 如申請專利範圍第1項所述之光學封裝,其中該電鍍層更形成在具有該絕緣層堆疊的該金屬層的另一面上。 The optical package of claim 1, wherein the plating layer is formed on the other side of the metal layer having the insulating layer stack. 如申請專利範圍第8項所述之光學封裝,其中該電鍍層包含銀、鎳、銅、鉑、鈀和金的至少一種。 The optical package of claim 8, wherein the plating layer comprises at least one of silver, nickel, copper, platinum, palladium, and gold. 如申請專利範圍第1項所述之光學封裝,其中該金屬層為一銅層或該絕緣層為一聚醯亞胺膜。 The optical package of claim 1, wherein the metal layer is a copper layer or the insulating layer is a polyimide film. 如申請專利範圍第1項所述之光學封裝,其中該樹脂單元具有一凸鏡形及包含一螢光物質與一透明樹脂。 The optical package of claim 1, wherein the resin unit has a convex mirror shape and comprises a fluorescent material and a transparent resin. 如申請專利範圍第11項所述之光學封裝,其中該透明樹脂由矽所製成。 The optical package of claim 11, wherein the transparent resin is made of tantalum. 一種光學封裝製造方法,包含步驟:(a)形成多個孔道在一絕緣層中;(b)壓合一金屬層於該絕緣層下方;(c)形成一反射層在該絕緣層之至少一側面上;(d)形成一電鍍層在經由該些孔道而暴露出的該金屬層上以及在該反射層上;(e)安置一光學元件在該些孔道之其中一者中以及透過多個連接單元將該光學元件與該金屬層電性連結;以及(f)形成一樹脂單元用以埋設該光學元件和該些連接單元。 An optical package manufacturing method comprising the steps of: (a) forming a plurality of cells in an insulating layer; (b) pressing a metal layer under the insulating layer; and (c) forming a reflective layer on at least one of the insulating layers (d) forming a plating layer on the metal layer exposed through the holes and on the reflective layer; (e) placing an optical element in one of the holes and through the plurality of holes The connecting unit electrically connects the optical element to the metal layer; and (f) forms a resin unit for embedding the optical element and the connecting unit. 如申請專利範圍第13項所述之光學封裝製造方法,更包含該步驟(c)更加形成該反射層在該絕緣層的一上表面上。 The optical package manufacturing method of claim 13, further comprising the step (c) of forming the reflective layer on an upper surface of the insulating layer. 如申請專利範圍第14項所述之光學封裝製造方法,其中該步驟(c)包含形成一白色反射層或一金屬反射層。 The optical package manufacturing method of claim 14, wherein the step (c) comprises forming a white reflective layer or a metal reflective layer. 如申請專利範圍第13項所述之光學封裝製造方法,其中在該步驟(c)更包含形成一光反射層在具有該絕緣層堆疊的該金屬層之另一面。 The optical package manufacturing method of claim 13, wherein the step (c) further comprises forming a light reflecting layer on the other side of the metal layer having the insulating layer stack. 如申請專利範圍第13項所述之光學封裝製造方法,其中在該步驟(c)更包含形成一電鍍層在具有該絕緣層堆疊的該金屬層之另一面。 The optical package manufacturing method of claim 13, wherein the step (c) further comprises forming a plating layer on the other side of the metal layer having the insulating layer stack.
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