201007971 九、發明説明： 【發明所屬之技術領域】 本案係為一種光二極體封裝基座結構及其製作方 法’尤指一種應用於一光二極體晶粒上的一種封裝基座結 構及製作方法。 u 【先前技術】 明參見第一圖，其係為習用光二極體封裝基座構造截 面示意®。從圖中我們可以清楚的看出此制光二極體封 以及導通孔12、13，^ 承載空間11的頂部開 其中矽基板10具有表面101、102， 3 口位於矽基板10之表面101之側， 裝基座構造1主要是切基板10上形成有承载空間n 以及導通孔12、13，1 tb 4c 1Λ β丄I -___ —/ H人〜〜衣囬丄义惻， 而承載工間11底部係用以承載如發光二極體（LED)或 雷射二極體（Laser 1)仏山0镗从土 -此〇 .. ____201007971 IX. Description of the invention: [Technical field of invention] The present invention relates to a photodiode package base structure and a manufacturing method thereof, particularly a package base structure applied to a photodiode die and a manufacturing method thereof . u [Prior Art] See the first figure, which is a cross-sectional view of the conventional light-diode package base. It can be clearly seen from the figure that the light-emitting diode package and the via holes 12, 13, the top of the bearing space 11 are opened, wherein the substrate 10 has surfaces 101, 102, and the three ports are located on the side of the surface 101 of the substrate 10 The pedestal structure 1 is mainly formed on the dicing substrate 10 with a bearing space n and via holes 12, 13, 1 tb 4c 1 Λ β 丄 I - ___ — / H ～ ~ 衣 丄 恻 恻 恻, and the load station 11 The bottom is used to carry, for example, a light-emitting diode (LED) or a laser diode (Laser 1) from the soil - this 〇.. ____
201007971 1中所包含的反射層15主要是用來提供高的光反射率來 反射由置於封裝基座結構1内部的光二極體晶粒1000發 出的光。但是在習用封裝基座結構1中，其反射層15上 形成有氣化矽絕緣層16，而通常此氧化矽絕緣層16會有 光部分吸收的問題’因此便會造成反射層15對光線反射 率下降的情況；此外，在反射層15上形成氧化矽絕緣層 6的這個製作過程中會有大約攝氏300度以上的溫度產 生’而這個溫度也會造成原本光亮的反射層15表面變得 較為粗糙而使其反射率大為下降；再者，一般的氧化矽絕 緣層14、16的導熱效果不良，當導電層17進行導電所產 生的熱迠，氧化梦絕緣層14、Ιό也較不利於熱能的傳導， 對於整體封|基座結構丨的散熱效率也造成了極大的景》 響。因此，如何針對習用光二極體封裝基座結構1在設計 上所產生的問題，係為發展本案之最主要的目的。 【發明内容】 本案係為一種封裝基座結構，用於承載一光二極體晶 粒’ 5亥封裝基座結構包含：一基板，其係具有一第一表面 與第一表面，一導通孔，其係貫穿於該基板，且該導通 孔之頂部開口位於該基板之該第—表面，該導通孔之底部 開口位於該基板之該第二表面；以及一導電反射層，其係 形成於該基板之該第-表面上，並具有—導電部與一反射 部，其中該導電耗通職導通狀側麵延伸形成至該 基板之該第二表面上並可與糾二極體晶粒完成電性連 接’而該反射部係位於該米二極體晶粒與該基板之第一表 201007971 面之間。 根據上述構想’本案所述之封裝基座結構，其中該基 板係可為晶格方向（1〇〇)、晶格方向⑽)、或晶格方向(間 之矽晶圓基板。 根據上述構想，本案所述之封裝基座結構，其中該導 電反射層係以-Tiw/Cu/Ni/Au 纟I …Ti/Cu/Ni/Au | 金、一 Ti/Au/Ni/Au合金或一 A1Cu/Ni/Au合金所完成。 根據上述構想，本案所述之封裝基座結構，其中該導 電反射層所具有之該導電部與該反射部係間隔有大於2〇 微米(um)之間距。 根據上述構想，本案所述之封裝基座結構，更包含 有：一氧化矽絕緣層，其係形成於該基板所具有之該第— 表面、該第二表面以及該導通孔之側壁上；一反射層，其 係形成於該導電反射層所具有之該反射部上；以及一透明 保護層’其係形成於該反射層上。 根據上述構想，本案所述之封裝基座結構，其中該反 射層係由對光反射率很高之鋁或銀材質所完成。 根據上述構想，本案所述之封裝基座結構，其中該透 明保護層係以一二氧化矽絕緣層（Si〇2)、一氮化矽絕緣層 (SixNy)、一聚亞醯胺絕緣層(p〇iyimi(je)、一聚甲基丙埽酸 甲酯絕緣層(Polymethyl Methacrylate: PMMA)或一光阻層 SU8等材質所完成之該透明保護層。 根據上述構想，本案所述之封裝基座結構，更包含— 承載空間，其頂部開口位於該基板所具有之該第一表面， 201007971 其底°卩用以承載該光一極體晶粒’而該導通孔之頂部係連 通於該承載空間之底部。 根據上述構想’本案所述之封裝基座結構，其中該承 載空間之頂部開口係可位於該基板所具有之該第二表面。 根據上述構想，本案所述之封裝基座結構，其中該導 通孔之頂部開口係大於、等於或小於該底部開口。The reflective layer 15 included in 201007971 1 is mainly used to provide high light reflectance to reflect light emitted by the photodiode die 1000 placed inside the package base structure 1. However, in the conventional package base structure 1, a vaporized tantalum insulating layer 16 is formed on the reflective layer 15, and generally the tantalum oxide insulating layer 16 has a problem that the light portion is absorbed. Therefore, the reflective layer 15 reflects the light. In addition, in the process of forming the yttrium oxide insulating layer 6 on the reflective layer 15, a temperature of about 300 degrees Celsius or more is generated, and this temperature also causes the surface of the originally bright reflective layer 15 to become more relatively Roughness causes the reflectance to drop greatly; in addition, the general yttria insulating layers 14, 16 have poor thermal conductivity, and when the conductive layer 17 conducts heat, the oxidized dream insulating layer 14 and yttrium are also disadvantageous. The conduction of thermal energy also caused a great impact on the heat dissipation efficiency of the overall package | Therefore, how to solve the problems caused by the design of the conventional photodiode package base structure 1 is the most important purpose of the development of the present case. SUMMARY OF THE INVENTION The present invention is a package base structure for carrying a photodiode die. The 5H package base structure comprises: a substrate having a first surface and a first surface, a via hole, The top surface of the via hole is located at the first surface of the substrate, the bottom opening of the via hole is located at the second surface of the substrate, and a conductive reflective layer is formed on the substrate The first surface has a conductive portion and a reflective portion, wherein the conductive conductive via-side extends to the second surface of the substrate and can be electrically connected to the correcting die die The connection is located between the rice diode die and the first surface 201007971 of the substrate. According to the above concept, the package base structure described in the present invention may be a lattice direction (1 〇〇), a lattice direction (10), or a lattice direction (between the wafer substrates. According to the above concept, The package base structure described in the present invention, wherein the conductive reflective layer is -Tiw/Cu/Ni/Au 纟I ... Ti/Cu/Ni/Au | gold, a Ti/Au/Ni/Au alloy or an A1Cu/ According to the above concept, the package base structure of the present invention, wherein the conductive reflective layer has the conductive portion and the reflective portion spaced apart by more than 2 〇 micrometers (um). The package base structure of the present invention further includes: a ruthenium oxide insulating layer formed on the first surface of the substrate, the second surface, and sidewalls of the via hole; a reflective layer And the transparent protective layer is formed on the reflective layer. According to the above concept, the package base structure of the present invention, wherein the reflective layer is It is made of aluminum or silver with high light reflectivity. According to the above concept, the package base structure described in the present invention, wherein the transparent protective layer is a germanium dioxide insulating layer (Si〇2), a tantalum nitride insulating layer (SixNy), and a polyamidide insulating layer ( The transparent protective layer is made of a material such as p〇iyimi (je), a polymethyl Methacrylate (PMMA) or a photoresist layer SU8. According to the above concept, the package base described in the present application The seat structure further includes a bearing space, the top opening is located on the first surface of the substrate, and the bottom surface of the 201007971 is used to carry the light-pole body die and the top of the conductive hole is connected to the bearing space According to the above concept, the package base structure of the present invention, wherein the top opening of the load space is located on the second surface of the substrate. According to the above concept, the package base structure described in the present invention, wherein The top opening of the via hole is greater than, equal to, or smaller than the bottom opening.
根據上述構想，本案所述之封裝基座結構，其中該光 二極體晶粒係以一打線之方式或一覆晶之方式與該^射 導電層所具有之該導電部完成電性連接。 根據上述構想，本案所述之封裴基座結構，其所承載 之该光二極體晶粒係可為一發光二極體晶粒或一雷射二 體晶粒。 本案另一方面係為一種光二極體封裝基座結構之製 作方法，該方法包含下列步驟··提供—基板，其係具有一 第=表面與-第二表面；於該基板之該第—表面上形成一 罩幕層，於該罩幕層上定義出—開σ ;對該基板進行钱 刻，進而於該開口處形成至少兩個導通孔，該等導通孔係 連通於該基板之該第-表面與該第二表面；以及去除該草 f層並於該絲之該第—表面上方形成—導電反射層，該 導電反射層係具有-導電部與—反射部，其中該導電部係 通過該等導通孔之難並延伸形成至該基板之該第二表 面上方並與一光二極體晶粒完成電性連接，而該反射部係 位於該光二極體晶粒與該基板之第一表面之間。 根據上述構想，本案另—方面所述之光二極體封裝基 201007971 座結構製作方法，其中該基板係可為晶格方向（1〇〇)、晶 格方向（110)、或晶格方向（111)之矽晶圓基板。 根據上述構想，本案另一方面所述之光二極體封裝基 座結構製作方法，其中該開口之形成方法包含下列步驟： 於該基板之該第一表面上形成以氮化矽、氧化矽或金屬完 成之該罩幕層，於該罩幕層上形成一光阻層；利用一光 罩在該光阻層上定義出一光阻圖形；以及根據該光阻圖形 光對該罩幕層進行钱刻而形成該開口。 根據上述構想’本案另一方面所述之光二極體封裝基 座結構製作方法，其中該基板係可利用一溼式蝕刻或一乾 式蝕刻對該開口進行钱刻。 根據上述構想’本案另一方面所述之光二極體封裝基 座結構製作方法，更包含下列步驟：於進行蝕刻後之該基 板之該第一表面、該第二表面與該等導通孔侧壁上形成一 氧化矽絕緣層；於該第一表面、該第二表面、該等導通孔 側壁之該氧化梦絕緣層上形成該導電反射層；於該導電 反射層所具有之該反射部上形成一反射層；以及於該反射 層上形成一透明保護層。 根據上述構想’本案另一方面所述之光二極體封裝基 座結構製作方法，其中該氧化矽絕緣層係以一高溫氧化之 方式所形成。 根據上述構想，本案另一方面所述之光二極體封裝基 座結構製作方法，其中該反射層係由對光反射率很高之鋁 或銀材質所完成並以一蒸鍍或濺鍍之方式形成於該反射 201007971 部上。 根據上述構想，本案另一方面所述之光二極體封裝基 座結構製作方法，其中該透明保護層係以__二氧化石夕絕緣 層（Si02)、—氮化石夕絕緣層（SixNy)、一聚亞酿胺絕緣層 (Polyimide)、一聚甲基丙烯酸甲酯絕緣層（p〇lymethyl Methacrylate: PMMA)或一光阻層sus等材質所完成之該 透明保護層。 根據上述構想’本案另一方面所述之光二極體封装基 座結構製作方法’其中該導電反射層係—Tiw/Cu/Ni/Au 合金、一 Ti/Cu/Ni/Au 合金、一 Ti/Au/Ni/Au 合金或一According to the above concept, the package base structure of the present invention, wherein the photodiode die is electrically connected to the conductive portion of the conductive layer in a one-line manner or a flip chip manner. According to the above concept, the sealed susceptor structure described in the present invention may be a light-emitting diode die or a laser diode die. Another aspect of the present invention is a method for fabricating a photodiode package base structure, the method comprising the steps of: providing a substrate having a first surface and a second surface; the first surface of the substrate Forming a mask layer on the mask layer, defining an opening σ; performing etching on the substrate, and forming at least two via holes at the opening, the conductive vias being connected to the substrate a surface and the second surface; and removing the grass f layer and forming a conductive reflective layer over the first surface of the wire, the conductive reflective layer having a conductive portion and a reflective portion, wherein the conductive portion passes through The conductive vias are formed over the second surface of the substrate and electrically connected to a photodiode die, and the reflective portion is located on the photodiode die and the first surface of the substrate between. According to the above concept, a method for fabricating a photodiode package base 201007971 according to another aspect of the present invention, wherein the substrate system may be in a lattice direction (1 〇〇), a lattice direction (110), or a lattice direction (111) ) The wafer substrate. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the method for forming the opening comprises the steps of: forming tantalum nitride, hafnium oxide or metal on the first surface of the substrate Finishing the mask layer, forming a photoresist layer on the mask layer; defining a photoresist pattern on the photoresist layer by using a mask; and performing money on the mask layer according to the photoresist pattern light The opening is formed to engrave. According to the above concept, the photodiode package base structure manufacturing method according to another aspect of the present invention, wherein the substrate can be etched by a wet etching or a dry etching. According to the above concept, the method for fabricating the photodiode package base structure according to another aspect of the present invention further includes the following steps: the first surface, the second surface, and the sidewalls of the via holes after etching Forming a ruthenium oxide insulating layer; forming the conductive reflective layer on the oxidized dream insulating layer on the first surface, the second surface, and the sidewalls of the via holes; forming on the reflective portion of the conductive reflective layer a reflective layer; and a transparent protective layer formed on the reflective layer. According to the above concept, a method of fabricating an optical diode package base structure according to another aspect of the invention, wherein the ruthenium oxide insulating layer is formed by a high temperature oxidation. According to the above concept, the photodiode package base structure manufacturing method according to another aspect of the present invention, wherein the reflective layer is formed by aluminum or silver material having high light reflectivity and is vapor-deposited or sputtered. Formed on the reflection 201007971. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the transparent protective layer is a SiO 2 SiO2 insulating layer (SixNy), The transparent protective layer is made of a material such as a polyimide, a polymethylmethacrylate insulating layer (PMMA) or a photoresist layer sus. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the conductive reflective layer is a Tiw/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, a Ti/ Au/Ni/Au alloy or one
AlCu/Ni/Au合金所完成’其形成方法包含下列步驟：以 -光罩於該第-表面之魏切絕緣層上定義出一電鑛 區域；以及以一濺鍍加電鍍或一濺鍍加化鍍之方式於該電 鍍區域形成該導電反射層。 根據上述構想’本案另一方面所述之光二極體封裝基 座結構製作方法’其中該光二極體晶粒係可為一發光二極 體晶粒或一雷射二極體晶粒。 本案另-方面係為一種光二極體封裝基座結構之製 作方法，該方法包含下列步驟：提供一基板，其係具有一 第-表面與-第二表面’’分別於該基板之該第—表面與該 第二表面上形成-第-罩幕層與—第二罩幕層；分別於該 第-罩幕層與該第二罩幕層上定義出—第—開口與—第 二開口；對該基板進行麵刻，進而分別於該第_開口處與 該第二開口處形成可供〜光二極體晶粒置放之一承载空 201007971 * 間與至少兩個導通孔，該等導通孔係連通於該承載空間之 底崢與該基板之該第二表面；以及去除該罩幕層並於該基 板之该第一表面與該承载空間之底部上方形成一導電反 射層，該導電反射層係具有一導電部與一反射部，其中該 導电部係通過該等導通孔之側壁並延伸形成至該基板之 該第二表面上方並與一光二極體晶粒完成電性連接，而該 反射。卩係位於該光二極體晶粒與該承載空間之底部之間。 © 根據上述構想，本案另一方面所述之光二極體封裝基 座結構製作方法，其中該基板係可為晶格方向（1〇〇)、晶 格方向（110)、或晶格方向（111)之石夕晶圓基板。 根據上述構想’本案另一方面所述之光二極體封裝基 ' 座結構製作方法’其中該第一開口與該第二開口之形成方 ' 法包含下列步驟：於該基板之該第一表面與該第二表面分 別形成以氮化矽、氧化矽或金屬完成之該第一罩幕層與該 第二罩幕層；於該第一罩幕層與該第二罩幕層上分別形 © 成一第一光阻層與一第二光阻層；利用一第一光罩與一第 二光罩在該等光阻層上定義出一第一光阻圖形與—第二 光阻圖形；以及根據該第一光阻圖形與該第二光阻圖形對 5亥第一罩幕層與該第二罩幕層進行姓刻而形成該第一開 口與該第二開口。 幵 根據上述構想’本案另一方面所述之光二極體封裝義 座結構製作方法，其中該基板係可利用一溼式蝕刻或一乾 式#刻對該開口進行餘刻。 根據上述構想，本案另一方面所述之光二極體封裝基 12 201007971 座結構製作方法’更包含下列步驟：於進行钱刻後之該基 • 板之該第一表面、該第二表面、該承載空間之底部與該等 導通孔側壁上形成一氧化矽絕緣層；於該第一表面、該第 二表面、該承載空間底部、該等導通孔侧壁之該氧化矽絕 緣層上形成該導電反射層；於該導電反射層所具有之該反 射部上形成一反射層·，以及於該反射層上形成一透明保護 層。 根據上述構想，本案另一方面所述之光二極體封裝基 ® 座結構製作方法，其中該氧化矽絕緣層係以一高溫氧化之 方式所形成。 根據上述構想，本案另一方面所述之光二極體封裴基 座結構製作方法，其中該反射層係由對光反射率很高之鋁 或銀材質所完成並以一蒸鍍或濺鍍之方式形成於該反射 . 部上。 根據上述構想，本案另一方面所述之光二極體封裝基 ❿ 座結構製作方法，其中該透明保護層係以一二氧化矽絕緣 層（Si〇2)、一氮化矽絕緣層（SixNy)、一聚亞醯胺絕緣層 (Polyimide)、一聚甲基丙烯酸曱酯絕緣層The AlCu/Ni/Au alloy is completed by the following steps: a photomask is defined on the first surface of the Wei-cut insulating layer by a photomask; and a sputtering or plating or sputtering is applied. The plating method forms the conductive reflective layer in the plating region. According to the above concept, the method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the photodiode die can be a light emitting diode die or a laser diode die. Another aspect of the present invention is a method for fabricating a photodiode package base structure, the method comprising the steps of: providing a substrate having a first surface and a second surface '' respectively on the substrate - Forming a first-mask layer and a second mask layer on the surface and the second surface; defining a first opening and a second opening respectively on the first mask layer and the second mask layer; The substrate is surface-etched, and at the first opening and the second opening respectively, a space for the light-emitting diode die to be placed 201007971* and at least two via holes are formed, and the via holes are formed. Connecting the bottom surface of the carrying space to the second surface of the substrate; and removing the mask layer and forming a conductive reflective layer on the first surface of the substrate and the bottom of the carrying space, the conductive reflective layer The conductive portion has a conductive portion and a reflective portion, wherein the conductive portion passes through the sidewall of the via hole and extends over the second surface of the substrate and is electrically connected to a photodiode die. reflection. The lanthanide is located between the photodiode die and the bottom of the carrying space. According to the above concept, a photodiode package base structure manufacturing method according to another aspect of the present invention, wherein the substrate system may be in a lattice direction (1 〇〇), a lattice direction (110), or a lattice direction (111) ) Shi Xi wafer substrate. According to the above concept, the method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the method of forming the first opening and the second opening comprises the following steps: on the first surface of the substrate Forming, by the second surface, the first mask layer and the second mask layer respectively by tantalum nitride, yttrium oxide or metal; forming a shape on the first mask layer and the second mask layer respectively a first photoresist layer and a second photoresist layer; a first photoresist pattern and a second mask are used to define a first photoresist pattern and a second photoresist pattern on the photoresist layers; The first photoresist pattern and the second photoresist pattern are sequentially formed by the first mask layer and the second mask layer to form the first opening and the second opening. According to the above concept, a method for fabricating a photodiode package pedestal structure according to another aspect of the present invention, wherein the substrate can be etched by a wet etching or a dry etch. According to the above concept, the method for fabricating the photodiode package base 12 201007971 according to another aspect of the present invention further includes the following steps: the first surface, the second surface, and the second surface of the substrate after the engraving Forming a yttria insulating layer on a sidewall of the carrying space and sidewalls of the via holes; forming the conductive layer on the first surface, the second surface, the bottom of the carrying space, and the yttrium oxide insulating layer of the sidewalls of the via holes a reflective layer; a reflective layer formed on the reflective portion of the conductive reflective layer; and a transparent protective layer formed on the reflective layer. According to the above concept, a photodiode encapsulation base structure manufacturing method according to another aspect of the invention, wherein the yttrium oxide insulating layer is formed by a high temperature oxidation. According to the above concept, the photodiode sealing base structure manufacturing method according to another aspect of the present invention, wherein the reflective layer is made of aluminum or silver material having high light reflectivity and is vaporized or sputtered. The way is formed on the reflection. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the transparent protective layer is a germanium dioxide insulating layer (Si〇2) and a tantalum nitride insulating layer (SixNy). Polyimide, polymethyl methacrylate insulation
Methacrylate: PMMA)或一光阻層SU8等材質所完成之該 透明保護層。 根據上述構想’本案另一方面所述之光二極體封裝基 座結構製作;法，其中該導電反射層係—Tiw/Cu/Ni/Au 合金、一 Ti/Cu/Ni/Au 合金、一 Ti/Au/Ni/Au 合金或一 - A1CU腕Au合金所完成’其形成方法包含下列步驟：以 13 201007971 一第一光罩於該氧化石夕、絕緣層上定義出-電錢區域；以及 以-激鍍加電鍍或—魏加化鍍之方式於該電鍍區域形 成該導電反射層。 根據上述構想，本案另一方面所述之光二極體封裝基 座結構製作方法，其中該光二極體晶粒係為 體晶粒或-雷射二極體晶粒。 【實施方式】 請參見第二圖’其係為改善制封祕絲構所產生 之缺失而發展出-封裝基座結構之第一較佳實施例截面 示意圖，而本案所述之封裝基座結構2主要_於如發光 -極體晶粒或雷射二極體晶粒之—光二極體晶粒細的 封裝過程中。從圖中我們可以清楚的看出，該封裝基座結 構2主要包含有一基板2〇、一導通孔21、22、一氧化矽 絕緣層23以及一導電反射層24，其中該基板2〇係為一 石夕晶圓基板並具有-第-表面2〇1與一第二表面2〇2，該 導通孔2卜22係貫穿於該基板2〇，且料通孔2ι、^ 之頂部開口位於該基板20之該第-表面2(Π，該導通孔 2/、22之底部開口位於該基板2〇之該第二表面2〇2，該 氧化矽絕緣層23係形成於該基板2〇所具有之該第一表面 201、該第二表面202與該導通孔21、22之侧壁上，而談 導電反射層24係形成於該基板20所具有之該第一表面 2〇1之該氧化矽絕緣層23上，該導電反射層24具有—導 電部241與一反射部242，其中該導電部241係通過該導 通孔2卜22之側壁並延伸形成至該基板2〇之該第二表面 14 201007971 ^02之°玄氧化石夕絕緣層23上，該反射部242上係承載該 光二極體晶粒200。以下再就本案所述之封裝基座結構做 進一步的描逑。 承上述說明，該封裝基座結構2所包含之該 射層24係以—Tiw/C_/Au合金、一 Ti/c_/Au合金、 :WAU/Ni/Au +金或_ A1C_/Au合金所完成，而該 光一極體晶粒2〇〇通常是以打線(如圖中所示之電導線⑺ ❹ 或覆晶財縣與該導f反射層24所包含之該導電部 241完成紐連接’該導電反射層％所具有之該導電部 241與該反射部242係間隔有大於20微米(um)的間距a。 此外，由於以矽材質所完成的基板20與以金屬所完成的 ' 該導電反射層24對某些波長的光會有穿透或吸收的問 題，因此可以在承載該光二極體晶粒200的該反射部242 上形成一層對光反射率很高之鋁或銀材質所完成之一反 射層25，以增加所完成之光二極體封裝結構2之整體出 Q 光效率，倘若顧慮到在後續製程該反射層25會遭受到破 壞，我們也可以在該反射層25上形成一層非常薄的一透 明保護層26 (厚度小於l〇〇nm)，而此透明保護層26可以 是二氧化矽絕緣層（Si〇2)、氮化矽絕緣層（sixNy)、一聚亞 酿胺絕緣層（Polyimide)、一聚甲基丙烯酸甲酯絕緣層 (Polymethyl Methacrylate: PMMA)或一光阻層 SU8 等材質來 完成’以此來達到保護該反射層25的目的。上述在該反 射部242上並非一定要形成該反射層25以及該透明保護 層26 ’在本案所述之封裝基座結構2中，該反射部242 15 201007971 已，具備將光線反射的功能，而於其上形成該反射層25 只是要增強其發柄效率，但並非必要手段，特此說曰明。 睛參見第二圖（a)〜⑴，其係為本案在第一較佳 實施例中所狀基座結作方法流赫意圖嘴圖 中我可以清楚的看出，首先，如第三圖⑷所示，在該基 板20之該第一表面2〇1形成以氮化矽、氧化矽或金屬等 材質所完成的罩幕層2010 ;如第三圖作)所示，在該罩幕 層2010上形成一光阻層2〇11 ;如第三圖（c)所示，利 用一光罩（在本圖中未示出）在該光阻層2〇11上定義出 一光阻圖形2012、2013 ;如第三圖（d)所示，根據該光 阻圖开> 2012、2013對該罩幕層2〇1〇進行姓刻而形成開口 2014、2015 ’如第三圖（e)所示，對該基板2〇進行姓刻， 進而在該開Ο 2014、2015處形成導通孔21、22，並且將 該罩幕層2010與該光阻層2011去除；如第三圖（f)所 示，於該基板20之該第一表面201、該第二表面202與 導通孔21、22側壁上形成該氧化矽絕緣層23 ;如第三圖 (g)所示’於該第一表面201、該第二表面202、該導通 孔21、22侧壁之該氧化矽絕緣層23上形成以 TiW/Cu/Ni/Au 或 Ti/Cu/Ni/Au 或 Ti/Au/Ni/Au 或 AlCu/Ni/Au合金所完成之該導電反射層24;如第三圖（h) 所示’於該導電反射層24所具有之該反射部242上形成 該反射層25 ;如第三圖（i)如示，於該反射層25上形成 以二氧化>5夕絕緣層(Si02)、氮化石夕絕緣層（SixNy)、一聚亞 醯胺絕緣層（Polyimide)、聚曱基丙烯酸甲酯絕緣層 201007971 . <Pdymethyl Methaeiylate: pmma)或光阻層 SU8 等材質所完 成之該透日腾護層26。町再就上叙絲步驟做詳細 的描述。 關於上述封餘座結構2之f作步驟，其巾該氧化石夕 絕緣層23細-高溫氧化之方式所形成。該導電反射層 24係以-光罩（在本圖中未示出）於該第一表面加上 ，氧化石夕絕緣層23上定義出一電鑛區域（該電錢區域涵 ❹ 蓋導通孔表面），並以一濺鍍（Sputtering)加電鍍 (Elect_ating)或一濺鑛（Sputtering)加化鍍(Eiectr〇iess Plating)之方式於該電鑛區域形成該導電反㈣％。而該 反射層25得、以一蒸鑛或濺鑛(Spmtering)之方式形成於該 - 導電反射層24所具有之該反射部242上。 - 經由上述說明，我們可以清楚的瞭解本案所述之封 裝基座結構2主要是在具有導通孔21、22的基板20上形 成具有該導電部241與該反射部242之該導電反射層 ❹ 24 ’其中該導電部241係通過該導通孔21、22之侧壁， f導電部241可做為接合、導電以及導熱之用，而該反射 P 42則增加該光二極體晶粒2⑻的出光效率。由於該導 ^反射層24同時完成了可增加出光效率的反射構造（如 忒反射部242)以及導電構造（如該導電部241)，所以本 案二述之封裝基座結構2可以避免和降低在先前技術中 J翫用封裝基座結構的反射層在製作過程中遭受到 破壞的可雜，且由於本賴述之封裝基座結構2製作步 驟較為簡單，也因此有效的降低了製作成本。此外，在第 17 201007971 :較佳實施例中所述之縣基座結構2依照所選用基板 晶格方向的不同’如⑽）、（_或(叫等不同晶格方向 的石夕基板、钱刻方式（如使用漁式餘刻或乾式餘刻）或製 作方法的不同，也可以如第四圖⑷⑻⑷所示之 封裝基座結構2a、2b、2c之不同的變形。 請參見第五圖，其係為改善f用封裝基座結構所產 生之缺失而發展出—封裝基座賴之第二較佳實施例截 面示意圖。從圖中我們可以清楚的看出，該封裝基座結構 3主要包含有一基板3〇、一導通孔31、32、一承載空間 33、一氧化矽絕緣層34以及一導電反射層％，其中該基 板30具有一第表面301與一第二表面3〇2，該導通孔31、 32之頂部開口餘於該承載空間33之底部，該導通孔 31、32之底部開口位於該基板3〇之該第二表面3〇2，該 氧化梦縣層34係軸賊基板有之該第一表面 30卜該第二表面302、構成該承載空間％之斜面33卜 332以及該導通孔3卜32之侧壁上，而該導電反射層％ 係形成於該紐30所具有之該[表面與構成該承 載空間33之斜面331、332之該氧化石夕絕緣層35上，該 導電反射層35具有-導電部351與一反射部352，其中 該導電部351係通過該導通孔31、32之側壁並延伸形成 至該基板30之該第二表面302之該氡化矽絕緣層从上， 該反射部352上係承載光二極體晶粒3〇〇。而與第二圖所 示之封裝基座結構2不同處在於本較佳實施例所述之封 裝基座結構3在該基板30上形成有該承載空間33，其頂 18 201007971 部開口位於該基板30之該第—表面301，該承载空間μ 主要是將光二極體晶粒300置於其中，藉由構成該承載办 間33之斜面331、332來增進所完成之光二極體封骏結： 3之整體出光效率。 nThe transparent protective layer is made of a material such as Methacrylate: PMMA or a photoresist layer SU8. According to the above concept, the photodiode package base structure is fabricated on the other hand, wherein the conductive reflective layer is Tiw/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a Ti. /Au/Ni/Au alloy or a-A1CU wrist Au alloy is completed. The method for forming the same comprises the following steps: 13 201007971 a first reticle on the oxidized stone, the insulating layer defines a - money money area; The method of forming a conductive reflective layer in the plating region by means of electroplating plus electroplating or -Wey addition plating. According to the above concept, a photodiode package base structure according to another aspect of the present invention, wherein the photodiode die is a bulk crystal or a laser diode die. [Embodiment] Please refer to the second figure, which is a cross-sectional view of a first preferred embodiment of the package base structure, which is developed to improve the defect caused by the sealing structure, and the package base structure described in the present application 2 Mainly in the encapsulation process of light-polar crystal grains or laser diode grains-light diode grains. As can be clearly seen from the figure, the package base structure 2 mainly comprises a substrate 2 〇, a via hole 21, 22, a ruthenium oxide insulating layer 23 and a conductive reflective layer 24, wherein the substrate 2 is a radiant wafer substrate having a first surface 2 〇 1 and a second surface 2 〇 2, the via hole 22 is inserted through the substrate 2 〇, and the top opening of the material through hole 2 ι , ^ is located on the substrate The first surface of the second surface 2 (the bottom surface of the via hole 2/, 22 is located on the second surface 2〇2 of the substrate 2, and the yttria insulating layer 23 is formed on the substrate 2 The first surface 201, the second surface 202 and the sidewalls of the via holes 21, 22, and the conductive reflective layer 24 are formed on the first surface 2?1 of the substrate 20. On the layer 23, the conductive reflective layer 24 has a conductive portion 241 and a reflective portion 242, wherein the conductive portion 241 extends through the sidewall of the via hole 22 and extends to the second surface 14 of the substrate 2 201007971 The photodiode die 200 is carried on the reflective portion 242. Further, the package base structure described in the present invention is further described. According to the above description, the shot layer 24 included in the package base structure 2 is a Tiw/C_/Au alloy, a Ti/c_/Au. Alloy, :WAU/Ni/Au + gold or _ A1C_/Au alloy is completed, and the photodiode grain 2〇〇 is usually wire-bonded (the electric wire shown in the figure (7) 或 or covered with Caixian County and The conductive portion 241 included in the conductive reflective layer 24 completes the new connection. The conductive portion 241 of the conductive reflective layer has a spacing a greater than 20 micrometers (um) from the reflective portion 242. The substrate 20 made of tantalum material and the metal-completed 'the conductive reflective layer 24 may have a problem of penetrating or absorbing light of a certain wavelength, and thus the reflecting portion of the photodiode die 200 may be carried. A reflective layer 25 is formed on the 242 to form a layer of aluminum or silver having a high light reflectivity to increase the overall Q-light efficiency of the completed photodiode package structure 2, provided that the reflective layer is considered in subsequent processes. 25 will suffer damage, we can also form a very thin layer on the reflective layer 25. a transparent protective layer 26 (thickness less than 10 nm), and the transparent protective layer 26 may be a ceria insulating layer (Si〇2), a tantalum nitride insulating layer (sixNy), and a polyaradenide insulating layer ( Polyimide), a polymethyl methacrylate (PMMA) or a photoresist layer SU8, etc., to achieve the purpose of protecting the reflective layer 25. The above-mentioned reflection portion 242 is not necessarily To form the reflective layer 25 and the transparent protective layer 26' in the package base structure 2 described in the present invention, the reflective portion 242 15 201007971 has a function of reflecting light, and the reflective layer 25 is formed thereon. It is necessary to enhance the efficiency of its hair shaft, but it is not a necessary means. See the second figure (a) ~ (1), which is the method of the pedestal in the first preferred embodiment of the present invention. I can clearly see in the mouth diagram, first, as shown in the third figure (4) As shown, the first surface 2〇1 of the substrate 20 is formed with a mask layer 2010 made of a material such as tantalum nitride, yttria or metal; as shown in the third figure, in the mask layer 2010. Forming a photoresist layer 2〇11 thereon; as shown in FIG. 3(c), a photoresist pattern 2012 is defined on the photoresist layer 2〇11 by using a photomask (not shown in the figure). 2013; as shown in the third figure (d), according to the photoresist pattern opening > 2012, 2013, the mask layer 2〇1〇 is surnamed to form an opening 2014, 2015 'as in the third figure (e) Show that the substrate 2 is surnamed, and then the via holes 21, 22 are formed at the openings 2014, 2015, and the mask layer 2010 and the photoresist layer 2011 are removed; as shown in the third figure (f) The first surface 201 of the substrate 20, the second surface 202, and the sidewalls of the via holes 21, 22 are formed on the sidewalls of the via holes 21, 22; as shown in the third diagram (g) The second The surface 202, the yttria insulating layer 23 on the sidewalls of the via holes 21, 22 are formed of TiW/Cu/Ni/Au or Ti/Cu/Ni/Au or Ti/Au/Ni/Au or AlCu/Ni/Au. The conductive reflective layer 24 is completed by the alloy; as shown in FIG. 3(h), the reflective layer 25 is formed on the reflective portion 242 of the conductive reflective layer 24; as shown in the third diagram (i), An insulating layer (SiO 2 ), a nitriding insulating layer (Six Ny), a polyimide insulating layer (Polyimide), and a polymethyl methacrylate insulating layer 201007971 are formed on the reflective layer 25 . <Pdymethyl Methaeiylate: pmma) or the photoresist layer SU8 and the like. The town will then give a detailed description of the steps. Regarding the step f of the above-described sealed seat structure 2, the oxidized oxide layer 23 is formed by fine-high temperature oxidation. The conductive reflective layer 24 is applied to the first surface by a photomask (not shown in the figure), and an electric ore region is defined on the oxidized oxide layer 23 (the electric money region is covered by the via hole) The surface is formed by sputtering or electroplating or sputtering (Epecting) plating to form the conductive anti-(four)%. The reflective layer 25 is formed on the reflecting portion 242 of the conductive reflective layer 24 by means of a vapor ore or sputtering. Through the above description, we can clearly understand that the package base structure 2 described in the present invention mainly forms the conductive reflective layer 24 having the conductive portion 241 and the reflective portion 242 on the substrate 20 having the via holes 21, 22. 'The conductive portion 241 passes through the sidewalls of the via holes 21, 22, and the f conductive portion 241 can be used for bonding, conducting, and conducting heat, and the reflecting P 42 increases the light output efficiency of the photodiode die 2 (8). . Since the reflective layer 24 simultaneously completes a reflective structure (such as the germanium reflecting portion 242) that can increase light extraction efficiency and a conductive structure (such as the conductive portion 241), the package base structure 2 of the present invention can be avoided and reduced. In the prior art, the reflective layer of the package base structure is damaged during the manufacturing process, and since the manufacturing process of the package base structure 2 is relatively simple, the manufacturing cost is effectively reduced. In addition, in the 17th 201007971: the preferred embodiment of the county base structure 2 according to the selected substrate crystal lattice direction 'such as (10)), (_ or (called different crystal lattice direction of Shi Xi substrate, money The engraving method (such as the use of fishing remnant or dry remnant) or the manufacturing method may also be different deformations of the package base structures 2a, 2b, 2c as shown in the fourth figure (4) (8) (4). This is a cross-sectional view of a second preferred embodiment of the package pedestal for improving the absence of the package pedestal structure. As can be clearly seen from the figure, the package pedestal structure 3 mainly comprises The substrate 30 has a first surface 301 and a second surface 3 〇2 The top opening of the hole 31, 32 is at the bottom of the bearing space 33, and the bottom opening of the through hole 31, 32 is located on the second surface 3〇2 of the substrate 3, and the oxidized Mengxian layer 34 has a shaft thief substrate The first surface 30 is formed by the second surface 302 The bevel surface 33 of the bearing space % 332 and the side wall of the via hole 3 32, and the conductive reflective layer % is formed on the surface 30 of the button 30 [the surface and the slopes 331, 332 constituting the bearing space 33 On the oxidized oxide layer 35, the conductive reflective layer 35 has a conductive portion 351 and a reflective portion 352, wherein the conductive portion 351 passes through the sidewalls of the via holes 31, 32 and extends to the substrate 30. The bismuth germanium insulating layer of the second surface 302 is upper, and the reflective portion 352 carries the photodiode die 3 〇〇. The difference from the package pedestal structure 2 shown in the second figure lies in the preferred implementation. The package base structure 3 is formed on the substrate 30 with the bearing space 33, and the top 18 201007971 opening is located at the first surface 301 of the substrate 30. The bearing space μ is mainly a photodiode grain. 300 is placed therein to enhance the overall light-emitting efficiency of the completed photodiode seal by forming the slopes 331, 332 of the carrier 33.
請參見第六圖（a)〜（i)，其係為本案在第二較佳 實施例中所述之封裝基座結構製作方法流程示意圖。從圖 中我們可以清楚的看出，首先，如第六圖(a)所示，在該 基板30之該第一表面301與該第二表面3〇2分別形成= 氮化矽、氧化矽或金屬等材質所完成的罩幕層3〇1〇、 3011 ;如第六圖(b)所示，在該罩幕層3〇1〇、3〇11上形成 一光阻層3012、3013 ;如第六圖（c)所示，利用一第一 光罩與一第二光罩（在本圖中未示出）在該光阻層3012、 3013上定義出-光阻圖形3〇14、姻5、則6 ;如第六圖 (d)所示，根據該光阻圖形3〇14、3〇15、3〇16對該罩幕 層3010、3011進行蝕刻而形成開口 3〇17、3〇18、39 ; 如第六圖（e)所示，對該基板3〇進行蝕刻，進而在該拐 口 3017、3018、3019處形成該承载空間幻導通孔31、 32 ’亚且將該軍幕層〇、3()11與該光阻層$⑽、避 去除；如第六圖⑺所示，於該基板3〇之該第一表面 3〇1、該第二表面3〇2、該等導通孔3卜32側壁以及構成 該承載空間33之斜面33卜332、該承载空間％底部上 形成該氧切、_層34 ;如第⑽（g)所示，於該第一 表面30卜該第二表面3〇2、該承载空間幻之底面以及斜 面331 332上之該氧化矽絕緣層上形成以 201007971Referring to the sixth (a) to (i), which are schematic flowcharts of the method for fabricating the package base structure described in the second preferred embodiment of the present invention. As can be clearly seen from the figure, first, as shown in FIG. 6(a), the first surface 301 and the second surface 3〇2 of the substrate 30 are respectively formed with yttrium nitride, yttrium oxide or a mask layer 3〇1〇, 3011 made of a material such as metal; as shown in FIG. 6(b), a photoresist layer 3012, 3013 is formed on the mask layer 3〇1〇, 3〇11; As shown in FIG. 6(c), a first photomask and a second photomask (not shown in the figure) are used to define a photoresist pattern 3〇14 on the photoresist layers 3012 and 3013. 5, then 6; as shown in the sixth figure (d), the mask layers 3010, 3011 are etched according to the photoresist patterns 3〇14, 3〇15, 3〇16 to form openings 3〇17, 3〇 18, 39; as shown in FIG. 6(e), etching the substrate 3〇, and forming the bearing space through-holes 31, 32' at the corners 3017, 3018, and 3019, and the military curtain Layer 〇, 3 () 11 and the photoresist layer $ (10), avoiding removal; as shown in the sixth figure (7), the first surface 3 〇 1 , the second surface 3 〇 2 of the substrate 3 该The through hole 3 32 side wall and the inclined surface 33 constituting the bearing space 33 332, the oxygen-cutting layer _ layer 34 is formed on the bottom of the bearing space %; as shown in the (10) (g), the second surface 〇2 of the first surface 30, the bottom surface of the bearing space, and the slope 331 Formed on the yttria insulating layer on 332 to be 201007971
TiW/Cu/Ni/Au 或 Ti/Cu/Ni/Au 或 Ti/Au/Ni/Au 或 AlCu/Ni/Au合金所完成之該導電反射層35;如第六圖（h) 所示，於該導電反射層35所具有之該反射部352上形成 該反射層36 ;如第六圖（i)如示，於該反射層36上形成 以二氧化矽絕緣層（Si〇2)、氮化矽絕緣層（SixNy)、聚亞醯 胺絕緣層(Polyimide)、聚曱基丙烯酸曱酯絕緣層(PolymethylThe conductive reflective layer 35 is completed by TiW/Cu/Ni/Au or Ti/Cu/Ni/Au or Ti/Au/Ni/Au or AlCu/Ni/Au alloy; as shown in the sixth figure (h), The reflective layer 352 is formed on the reflective portion 352 of the conductive reflective layer 35; as shown in FIG. 6(i), a ruthenium dioxide insulating layer (Si〇2) is formed on the reflective layer 36.矽Insulation (SixNy), Polyimide, Polymethyl acrylate (Polymethyl)
Methacrylate: PMMA)或光阻層SU8等材質所完成之該透 明保護層37。 承上述說明’根據第二較佳實施例中所述之封裝基 座結構3的概念，我們也製作出如第七圖所示之封裝基座 結構3a ’也就是在基座30a的第一表面301a與第二表面 302a皆形成有承載空間33a，進而完成一種雙面皆有承載 空間的封裝基座結構。 表亍、合以上不同的實施例說明，我們可以清楚的瞭解 到’透過本案所述之技術手段所完成之光二極體封裝結構 確實解決了習用封裝結構上所產生的缺失，進而完成發展 本案之最主要的目的。而本發明得由熟習此技藝之人士任 施匠心而為諸般修飾，然皆不脫如附申請專利範圍所欲保 護者。 【圖式簡單說明】 本案得藉由下列圖式及說明，俾得一更深入之了解： 第一圖’其係為習用光二極體封裝基座楫造截面示意圖。 20 201007971 第一圖’其係為改善習用封裝基座結構所產生之缺失而發 展出一封裝基座結構之第一較佳實施例截面示意圖。 第二圖（a)〜（j)，其係為本案在第一較佳實施例中所 述之封裝基座結構製作方法流程示意圖。 第四圖（a) (b) (e) ’其係為在第—較佳實施例中所 述之封裝基座結構之不同變形示意圖。 第五圖’其係為改判用封錄麟構職生之缺失而發 展2-封裝基座結構之第二較佳實施纖面示意圖。 、圖（a) (j) ’其係為本案在第二較佳實施例中所 述之封農基絲構製作转流程示意圖。 第七圖’錢為在第在钱實_巾所述之縣基座結構 之不同變形示意圖。 【主要元件符號說明】 ❾ 本案圖式中所包含之各元件列式如下: 承载空間11 表面 101、102 反射層15 光二極體晶粒1000 光二極體晶粒200 導通孔21、22 導電反射層24 光一極體封裝基座構造1 矽基板10 導通孔12、13 氧化矽絕緣層14、16 導電層17 封裝基座結構2、2a、2b、2e • 基座20 、 氧化矽絕緣層23 21 201007971 反射部352 第二表面302、302a 光阻層3012、3013 光阻圖形 3014、3015、3016 開口 3017、3018、3019 導電部與反射部之間距a、b 反射層25 電導線27 第二表面202 反射部242 光阻層2011 開口 2014、2015 封裝基座結構3、3a 基板30、30a 承載空間33 導電反射層35 透明保護層37 斜面 331、332 透明保護層26 第一表面201 導電部241 罩幕層2010 光阻圖形2012、2013 光二極體晶粒300 導通孔31、32 氧化矽絕緣層34 反射層36 電導線38 導電部351 第一表面301、301a 罩幕層3010、3011 22The transparent protective layer 37 is made of a material such as Methacrylate: PMMA or a photoresist layer SU8. According to the above description, according to the concept of the package base structure 3 described in the second preferred embodiment, we also fabricate the package base structure 3a' as shown in the seventh figure, that is, on the first surface of the base 30a. Both the 301a and the second surface 302a are formed with a bearing space 33a, thereby completing a package base structure having a bearing space on both sides. According to the different embodiments, we can clearly understand that the optical diode package structure completed by the technical means described in this case has indeed solved the defects in the conventional package structure, and completed the development of the case. The main purpose. However, the present invention has been modified by those skilled in the art, and is not intended to be protected by those skilled in the art. [Simple description of the diagram] This case can be obtained through a more detailed understanding of the following drawings and descriptions: The first figure is a schematic cross-sectional view of a conventional light-diode package base. 20 201007971 The first figure is a cross-sectional view of a first preferred embodiment of a packaged base structure for improving the absence of a conventional packaged base structure. The second (a) to (j) are schematic flow charts of the method for fabricating the package base structure in the first preferred embodiment of the present invention. Fourth, (a), (b), (e) ' are different schematic views of the package base structure described in the first preferred embodiment. The fifth figure is a schematic diagram of a second preferred embodiment of the development of a 2-package pedestal structure for the purpose of revisiting the absence of the occupant. Figure (a) (j) is a schematic diagram of the process of making a closure of the silk-clad fabric in the second preferred embodiment. The seventh figure 'money is a different deformation diagram of the county pedestal structure described in the first section. [Main component symbol description] 各 The components included in the diagram are as follows: Carrying space 11 Surface 101, 102 Reflecting layer 15 Photodiode grain 1000 Photodiode grain 200 Conducting hole 21, 22 Conductive reflective layer 24 light one-pole package base structure 1 矽 substrate 10 via holes 12, 13 yttrium oxide insulating layer 14, 16 conductive layer 17 package base structure 2, 2a, 2b, 2e • pedestal 20, yttrium oxide insulating layer 23 21 201007971 Reflecting portion 352 second surface 302, 302a photoresist layer 3012, 3013 photoresist pattern 3014, 3015, 3016 opening 3017, 3018, 3019 between the conductive portion and the reflecting portion a, b reflective layer 25 electrical wire 27 second surface 202 reflection 242 photoresist layer 2011 opening 2014, 2015 package base structure 3, 3a substrate 30, 30a bearing space 33 conductive reflective layer 35 transparent protective layer 37 bevel 331, 332 transparent protective layer 26 first surface 201 conductive portion 241 mask layer 2010 photoresist pattern 2012, 2013 photodiode die 300 vias 31, 32 yttrium oxide insulating layer 34 reflective layer 36 electrical wires 38 conductive portion 351 first surface 301, 301a mask layer 3010, 3011 22