JP2008263205A - High-current surface mount type light-emitting diode lamp using printed circuit board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface mount type light-emitting diode lamp having improved heat radiation efficiency. <P>SOLUTION: The surface mount type light-emitting diode lamp has a metal layer 11 separated into first and second regions 12, 13, and a support layer 15 positioned at the upper portion of the metal layer. The support layer positioned at the upper portion of the first region in the metal layer is removed partially, preferably by laser drilling, and the first region of the metal layer is exposed at a portion 17, where the support layer is removed. A light-emitting diode chip is mounted to the exposed metal layer, and is electrically connected to the first and second regions in the metal layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention is a high-current surface-mount type light-emitting diode lamp using a substrate in which a surface conductor layer is formed on the surface of a support substrate as used in a circuit board, and a light-emitting diode chip is directly attached to the surface conductor layer. The present invention relates to a surface mount type light emitting diode lamp which is mounted to secure the shortest heat emission path to improve the efficiency of heat emission.

Conventional LED (Light Emitting Diode) lamps have been packaged by mounting an LED chip on a lead frame, which is then re-mounted on a circuit board and applied to a system or used as a component in a module form.
The structure of the conventional lead frame has a problem that the heat release efficiency is lowered, and a ceramic structure, a metal slug or an aluminum nitride (AlN) ceramic substrate having a heat release through passage developed to overcome the problem. In the case of LED lamps using leadframes containing heat dissipation, the heat release performance has been improved to some extent, but not only the heat release performance is not as good as usual, but in these configurations, in order to bother the passage between heat release Since the structure is complicated and the manufacturing process is complicated, the production cost is high, the molding work after chip mounting is difficult, the mass productivity is poor, and the production yield is lowered.
In addition, the conventional thin and directional surface-mounted light-emitting diode lamp requires a heat conductor structure (such as a router) to conduct and remove the heat emitted from the light-emitting diode chip, and the efficiency of heat emission. There was an attempt to increase the capacity of these structures in order to increase the resistance, but not only the efficiency of heat release was not good, but this caused the adhesion with the mold material to weaken and the problem of device peeling occurred .

Therefore, the present inventor forms a portion of the substrate in which the surface conductor layer is formed on the surface of the support substrate, such as that used for a circuit board, by removing only the surface conductor layer and removing the other layers. Is directly mounted on the surface conductor layer from the support substrate side at the removed portion, it is found that a light-emitting diode lamp capable of ensuring the shortest heat release path can be obtained. By further finding out that this is indeed possible by removing the thermal insulation material by laser irradiation, where the material can be removed, a light emitting diode lamp of the structure of the present invention was created and the present invention was completed.
Incidentally, there is no conventional structure in which a light emitting diode chip is directly mounted on a portion having only a thin layer such as a surface conductor layer of a circuit board from the substrate side, which is found by the laser irradiation found in the present invention. It can be said that the structure can be realized for the first time by the method of removing the support layer of the substrate.

  Since the present invention has improved heat dissipation characteristics compared to conventional small surface-mount type light-emitting diode lamps, the energy efficiency of the element as well as the characteristics of the light-emitting diode that is a point light source can be maximized. It is possible to drive at high power with high density. In particular, the uniformity, yield, mass productivity, and performance can be improved as compared with the conventional light emitting diode lamp considering heat dissipation. Therefore, for example, when used as a light energy source of a lighting fixture, a large ripple effect can be expected for the demand of a huge lighting market.

In addition, the brightness of ultra-small surface-mount light-emitting diode lamps of 1608 and 1415 sizes, which have been used in mobile phone keypads and display elements, can be improved more than twice, and the power has been increased more than twice. Because it can be driven, it can be applied to markets in this field and related new markets.
As a conventional technique for the present invention, a light emitting diode chip is formed on a portion where a conductive layer is provided on a support substrate and the support portion is removed by using a substrate having a configuration generally used in a printed circuit. A structure of a light-emitting diode lamp in which the heat-dissipating performance is significantly improved for this purpose has not been known. In the present invention, the process of removing only the support layer and the light reflection layer and leaving the conductor layer can be realized by selective removal by laser etching, so that this configuration can be easily and inexpensively manufactured. It was revealed for the first time that a configuration capable of a high-power diode can be easily and inexpensively manufactured.

The object of the present invention is to achieve the shortest by directly mounting a light-emitting diode chip on a portion of a support substrate made of an insulator plate having a surface conductor layer used for a circuit board or the like, by removing the insulator portion to make only the conductor layer. A surface mount type light emitting diode lamp having a heat release path is provided. Here, the support substrate having a surface conductor layer used for a circuit board or the like is a surface conductor layer generally composed of a metal (Cu, Al, etc.) used for a printed circuit board, The metal layer (11) preferably has a thickness of 10 μm or more, more preferably 100 μm or more and 800 μm or less. The support substrate 15 is made of FR-1, FR-4, or resin, for example, FR-1, FR-4, or BT resin (Bismaleimidetraizine Resin), and the thickness of the support layer is 400 μm or less. Some are preferred.
Another object of the present invention is a surface mounting in which a light emitting diode chip is directly mounted on a support substrate having a surface conductor layer used for a circuit board or the like, and a light extraction part is formed on the chip to improve light utilization efficiency. Type light-emitting diode lamp.
Another object of the present invention is to provide a method of manufacturing a surface-mounted light-emitting diode lamp having the shortest heat release path by mounting a light-emitting diode chip on a support substrate having a surface conductor layer used for a circuit board or the like. It is.

For the above purpose, the present invention provides a lower metal layer; a support layer located above the lower metal layer; and a lower metal layer of a substrate comprising a light reflecting layer located above the support layer. The insulating layer is electrically separated into the first region and the second region, and a part of the support layer and the light reflecting layer located above the first region is removed so that the lower metal layer is exposed and exposed. A surface-mounted light-emitting diode lamp having a structure in which a light-emitting diode chip is mounted on a lower metal layer and each electrode of the light-emitting diode chip is electrically connected to the first region and the second region of the lower metal layer. I will provide a.
According to the present invention, in addition to the structure of the diode lamp, a part of the support layer and the light reflecting layer located above the second region of the lower metal layer is removed to expose the second region of the lower metal layer. Thus, a surface mount type light emitting diode lamp having a structure in which one electrode of the light emitting diode chip is electrically connected to the exposed second region of the lower metal layer is provided.

The present invention provides a surface-mount light-emitting diode lamp, wherein the support layer and the light reflecting layer in the diode lamp are partially removed by laser drilling.
The present invention also provides a surface mount light emitting diode lamp, wherein the support layer and the upper metal layer are removed, and a light reflection structure is further included in a region where the light emitting diode chip is mounted.
The present invention provides a surface-mount type light emitting diode lamp, further comprising a light extraction unit covering the light emitting diode chip.
The present invention provides a surface-mounted light-emitting diode lamp comprising a mold member in which the light extraction unit is coupled to a light-emitting diode chip, and a surface-mounted light-emitting diode lamp including a diffusing agent, a fluorescent agent, or a dye in the light extraction unit. To do.

The present invention provides a surface-mount type light emitting diode lamp characterized in that the support layer further includes an engagement portion.
The present invention provides a surface-mounted light-emitting diode lamp, wherein a light guide is further formed adjacent to the light extraction unit.
The present invention provides a surface-mounted light-emitting diode lamp, wherein the light guide is made of a resin containing a white pigment or metal powder.

The present invention also includes a step of separating a first region and a second region by removing a part of a lower metal layer of a support substrate having a surface conductor layer used for a circuit board or the like; located above the first region A part of the support layer and a part of the support layer located above the second region of the lower metal layer are respectively removed by irradiation with a laser, and a part of the first region and the second region of the lower metal layer are removed. A surface mounting type comprising: exposing; and mounting a light emitting diode chip on the first region of the exposed lower metal layer, and electrically connecting each electrode of the diode chip to the first region and the second region, respectively. A method of manufacturing a light emitting diode lamp is provided.
The present invention also provides a method for manufacturing a surface-mounted light emitting diode lamp, further comprising applying a light reflecting material on the support layer.

The present invention also includes a step of separating a first region and a second region by removing a part of a lower metal layer of a support substrate having a surface conductor layer on both sides used for a circuit board or the like; Forming a laser mask on the upper metal layer positioned above the first region of the lower metal layer to remove a portion of the support layer and the upper metal layer positioned by laser irradiation; Irradiating the interior of the displayed region with a laser to remove the support layer, exposing a portion of the first region of the lower metal layer; and emitting light to the first region of the exposed lower metal layer; Provided is a method of manufacturing a surface-mount type light emitting diode lamp including a step of mounting a diode chip and electrically connecting to a first region and a second region.
The present invention relates to a method of manufacturing a surface-mount type light emitting diode lamp, wherein the laser mask is formed by removing a part of the upper metal layer by etching, and the laser mask is formed in a donut shape to form the upper metal. Provided is a method for manufacturing a surface-mounted light-emitting diode lamp, wherein the layer is formed by patterning.
The present invention provides a method for manufacturing a surface-mounted light-emitting diode lamp, further comprising: applying a light reflecting material after forming a laser mask on the upper metal layer.

The present invention further includes the step of forming a reflective structure in the chip mounting region of the first region of the exposed lower metal layer in each of the above manufacturing methods, and the manufacturing method of the surface mount type light emitting diode lamp, and A method for manufacturing a surface-mounted light-emitting diode lamp is provided, wherein the reflective structure is formed of Cu plating.
The present invention provides a method for manufacturing a surface-mounted light-emitting diode lamp, which includes an additional step of forming a light extraction part covering the light-emitting diode chip.

Hereinafter, the present invention will be described in detail with reference to the drawings.
The present invention is generally used in a circuit board, and the surface conductor layer is formed on the surface of the support substrate. The other surface is removed except for the surface conductor layer, and the light emitting diode chip is supported on the surface conductor layer. It is characterized by being mounted directly from the substrate side. In the present invention, a substrate used for a normal printed circuit board can be used, specifically, a printed circuit board composed of a support layer and a metal layer provided on one side thereof, or printing in which a metal layer is provided on both sides of the support layer. Circuit boards can be used as diode lamp boards.

  FIG. 1 schematically shows a printed circuit board configured to mount a light emitting diode chip and function as a light emitting diode package of the present invention. The lower metal layer (11), which is a conductive layer of the printed circuit board, includes a first region (12) and a second region (13), and the first region (12) and the second region (13) are electrically insulating portions ( 14). Since the lower metal layer of the printed circuit board is separated into the first region and the second region, when the light emitting diode chip is mounted, the lower metal layer (11) can serve as P and N electrode leads. At this time, the electrical insulating part 14 that separates the first and second regions of the lower metal layer 11 may be formed by a laser, punching, or etching process. For example, after forming a mold region for a post process on a circuit board by a punching or router method, the lower metal layer can be separated by an etching method to form an electrode portion.

  The electrical insulating part (14) separating the first region (12) and the second region (13) of the lower metal layer (11) can be filled with electrical support. The lower metal layer (11) of the present invention may be made of a metal (Cu, Al, etc.) used for a printed circuit board that is generally used, and Cu is suitable. The thickness of the lower metal layer (11) is suitably 10 μm or more and 100 μm or more and 800 μm or less. The support layer (15) of the present invention is located above the lower metal layer (11). The support layer is made of, for example, FR-1, FR-4, or resins, and is suitably composed of FR-1, FR-4, or BT resin (Bismaleimidetraizine Resin). The thickness of the support layer is preferably 400 μm or less.

  In the present invention, a light reflecting layer (16) may be further included on the support layer (15). The light reflecting layer can be formed by applying a light reflecting material, and the light reflecting material can be formed of, for example, resists, and correctly white resist or metal thin film. The light reflecting layer serves to reflect the light from the light emitting diode chip upward, thereby increasing the light utilization efficiency of the light emitting diode lamp of the present invention.

  In the present invention, the portion of the support layer and the light reflection layer located above the first region (12) of the lower metal layer (11) for mounting the diode chip, and the second of the lower metal layer A portion of the support and light reflection layer located above the region (13) is removed, and a part of the first region and the second region of the lower metal layer are exposed to each mount region (17) of the light emitting diode chip. And an incision (18) is formed. A light emitting diode chip is mounted in the mounting region (17) of the light emitting diode chip, and both electrodes of the light emitting diode chip are respectively connected to the first region (11) of the lower metal layer (11) in the mounting region (17) and the cutout portion (18), respectively. 12) and the second region (13). The two electrodes of the light emitting diode chip may be electrically connected to the first region 12 and the second region through wire bonding (22, 23). At this time, the metal layer of the first region on which the chip is mounted. The metal layer of the second region wire-bonded to each other serves as an electrode of each pole of the diode.

  FIG. 2 shows a chip mounting structure of the surface mount type light emitting diode lamp of the present invention. In the present invention, a light emitting diode chip is directly mounted on a lower metal layer exposed by removing a part of a support layer of a substrate in which a surface conductor layer is formed on the support substrate surface as used in a printed circuit board. In addition to ensuring the shortest heat conduction path, heat generated from the light emitting diode chip is directly emitted through the lower metal layer having high thermal conductivity, so that the efficiency of heat emission is greatly improved.

  FIG. 3 shows another embodiment of the present invention that further includes an upper metal layer (31) on the support layer (15). In this case, the removed portion of the upper metal layer (31) is also removed together with the support layer to be removed to form a chip mounting region. Further, the upper metal layer (31) may cover the entire surface of the support layer, or may be partially covered and the other part may be covered by the light reflecting layer (16).

  As another embodiment of the present invention, a light reflecting structure (32) may be further provided in the region (17) where the support layer (15) and the upper metal layer (31) are removed and the LED chip is mounted. Good. The reflective structure can be formed by plating with a metal material having good reflectivity, preferably Cu. By plating the reflection structure 32 with a metal material, the upper metal layer 31 and the lower metal layer 11 are connected by plating. When the upper metal layer and the lower metal layer are formed by plating, it is appropriate to form the reflective structure by Cu plating. By introducing such a reflection structure, light emitted from the side surface or the lower side of the light emitting diode chip can be emitted to the front surface, and the light use efficiency can be maximized. Further, the present invention is characterized in that the support layer is removed by laser irradiation to form a chip mounting region.

  FIG. 4 shows a plan view of the laser irradiation design in the laser irradiation process. In the present invention, in the region of the support layer to be removed, a plurality of laser perforations (41) formed by a single irradiation are formed so as to overlap each other, and the support layer is removed to remove the chip mounting structure. (17) can be formed. That is, the support layer can be removed until the size of the region where the chip is mounted by repeatedly irradiating the laser. In the present invention, a laser commonly used in the industry can be used as a suitable laser for removing the support layer. For example, a Nd: YAG laser or a CO2 laser can be used, and a laser with a wavelength of 10.6 μm is used. be able to. By using a laser of this wavelength, selective laser etching can be performed in which the support layer is removed but the metal is not removed.

  The method of removing the support layer by using an NC machine or a reel, or the conventional method such as punching or etching, has a problem of low yield, high cost, and low reproducibility. However, the method of the present invention in which the support layer is removed by overlapping irradiation with laser has an advantage that a structure with excellent reproducibility can be manufactured while being simple and easy.

  FIG. 5 shows another embodiment of the present invention in which a light extraction part 51 for covering the light emitting diode chip is additionally included. The light extraction part is formed by molding in an upper region of the light emitting diode chip and has a thickness of 200 to 1000 μm. The light extraction unit uses a light-transmitting material such as silicon or epoxy having a refractive index in the range of 1.4 or 2.5, and in particular, the mold member is a light emitting diode to prevent light from being reabsorbed by the light emitting diode chip. It is preferable to use a substance having a refractive index lower than that of the chip. The mold member may include various additives for converting the wavelength of light emitted from the light emitting diode chip and diffusing light. For example, a fluorescent agent can be included for converting the wavelength of light, a diffusing agent for diffusing light, or a dye.

  FIG. 6 shows that at least one engagement part 61 is provided in the light reflection layer 16 and the support layer 15 in order to prevent the peeling phenomenon between the mold member and the light emitting diode chip when the light extraction part is formed. Examples of the present invention will be described. The engagement part (61) is formed by removing a part of the upper metal layer and the support layer in the vertical direction from the light reflection layer (16) to the support layer (15). Since the mold member is introduced and cured at the engagement portion, the generation of separation between the mold member and the circuit board can be suppressed.

  FIG. 7 shows an embodiment further including a light guide (71) formed adjacent to the light extraction section. The light guide serves to guide the light emitted from the light emitting diode chip so that it can be emitted upward of the chip. The light guide is preferably made of a highly reflective material such as a white resist, and may be formed of a white pigment or a metallic material having excellent light reflectivity. The light guide can be formed by molding or taping (a method of adhering with a tape). The inner wall of the light guide may have an inclined surface between 45 ° and 90 ° with respect to the mold member.

The present invention also provides a method of manufacturing a surface-mounted light emitting diode lamp including the following steps.
Removing a part of the lower metal layer of the support substrate having a surface conductor layer used for a circuit board or the like to separate the first region and the second region;
A part of the support layer located above the first region of the lower metal layer and a part of the support layer located above the second region of the lower metal layer are respectively removed by irradiating with a laser. Exposing a portion of the first region and the second region of the metal layer; and mounting a light emitting diode chip on the exposed first region of the lower metal layer to electrically connect the first region and the second region. Connecting stages;

FIG. 8 shows a method for manufacturing a light-emitting diode lamp according to the present invention.
FIG. 9 shows a manufacturing method of another embodiment of the present invention further including an upper metal layer (31) on the support layer (15).

The present invention provides a method of manufacturing a surface-mounted light emitting diode lamp including the following steps.
Removing a part of the lower metal layer of the support substrate having a surface conductor layer used for a circuit board or the like to separate the first region and the second region;
Forming a laser mask (91) on the upper metal layer (31);
Irradiating the inside of the region indicated by the laser mask with a laser to remove the support layer to expose a part of the first region of the lower metal layer; and the first region of the exposed lower metal layer; Mounting a light emitting diode chip on the first region and electrically connecting the first region and the second region.

  In the above embodiment, the laser mask 91 may be formed by removing a part of the upper metal layer by, for example, etching. The laser mask is formed by patterning the upper metal layer in a circle as shown in FIG. That is, as shown in FIG. 9B, the laser mask (91) can be formed by removing the upper metal layer (31) other than the circular metal layer by etching. The laser mask (91) provides a pattern for removing the support layer by laser irradiation.

  FIG. 10 shows the laser irradiation situation in this case. The support layer is removed by overlappingly irradiating laser inside the laser mask (91) formed of a circular metal layer. As can be seen in FIG. 10, the metal layer constituting the laser mask (91) has a high thermal conductivity and is not destroyed by the laser irradiation. Therefore, the laser perforation (41) is formed in the laser mask and in the portion in contact with the laser mask. By overlapping, it is possible to remove the support layer in a form faithful to the shape of the laser mask. In particular, the support layer can be removed in a form that is very faithful to the shape of the laser mask by irradiating the metal layer so that the density of the laser perforations is high in the vicinity of the laser mask. The closer it is formed in a circle, the more the diffused reflection of the light emitted from the light emitting diode chip is prevented, and the light utilization efficiency can be increased.

Another embodiment of the present invention may further include a step of applying a light reflecting material (16) (picture 9c) after forming a laser mask with an upper metal layer.
In addition, the method may further include forming the light reflecting structure 32 at the chip mounting portion 17 formed by removing the support layer in another embodiment of the present invention. At this time, the light reflecting structure can be formed by plating a metal, preferably Cu. Furthermore, as another embodiment of the present invention, a step (FIG. 9 (f)) of forming a light extraction part (51) covering the light emitting diode chip can be included.

  Although the present invention has been described in detail through various embodiments as described above, this is for the purpose of explanation and is not intended to limit the protection scope of the present invention.

Circuit board schematic diagram of the present invention Plan view of the chip mounting structure of the present invention Schematic diagram of another embodiment of the present invention including an upper metal layer Plan view of laser irradiation design drawing Schematic diagram of another embodiment of the present invention including a light extraction unit Schematic diagram of another embodiment of the present invention including an engagement part Schematic diagram of another embodiment of the present invention including an engagement part Schematic diagram of another embodiment of the present invention including a light guide Schematic diagram showing the manufacturing process of the surface-mounted light-emitting diode lamp of the present invention The schematic diagram which shows the manufacturing process of the surface mount type light emitting diode lamp by other Example of this invention. Plan view of laser irradiation design according to another embodiment of the present invention

Explanation of symbols

11: Lower metal layer
12: First region 13: Second region
14: Heat insulation part 15: Support layer
16: Light reflection layer 17: Chip mounting part
18: Incision 21: Light emitting diode chip
22, 23: Wire bond 31: Upper metal layer
32: Reflective structure 41: Laser drilling
51: Light extraction part 61: Agreement part
71: Light guide 91: Laser mask

Claims (13)

A lower metal layer separated into a first region and a second region;
A support layer located on top of the lower metal layer,
A light reflecting layer located on top of the support layer,
Mounted on the chip mounting portion, which is a portion from which a part of the support layer and the light reflecting layer located above the first region of the lower metal layer is removed, and the lower metal layer portion where the first region of the lower metal layer is exposed A surface mount type light emitting diode lamp including a light emitting diode chip in which each pole of the diode is electrically connected to the first region and the second region of the lower metal layer. A lower metal layer separated into a first region and a second region;
A support layer located on top of the lower metal layer,
A light reflecting layer located on top of the support layer,
A chip mounting portion which is a portion from which a part of the support layer and the light reflection layer located above the first region of the lower metal layer is removed; and a support layer and a light reflection layer located above the second region of the lower metal layer The second region exposed portion from which a part has been removed, and the first region and second region of the lower metal layer exposed at the portion from which the support layer and the light reflection layer have been removed, and the exposed first region of the lower metal layer A surface-mounted light-emitting diode lamp including a light-emitting diode chip mounted on a portion and exposed to a first region and a second region of a lower metal layer, each of which is electrically connected to each pole of the diode. The light-emitting diode lamp according to claim 1 or 2,
The light reflecting layer located above the support layer is made of a metal layer,
The first region of the lower metal layer in a portion where the support layer and the metal layer located above the first region, and the support layer and the metal layer located above the second region are respectively removed. And a second region exposed, mounted on the first region of the exposed lower metal layer, and electrically connected to the first region and the second region of the exposed lower metal layer, respectively. Surface mount type light emitting diode lamp including chip.   The surface-mounted light-emitting diode lamp according to any one of claims 1 to 3, wherein the part from which the support layer and the light reflection layer are partially removed is formed by laser drilling.   5. The light reflecting structure formed by plating with a light reflecting metal such as Cu or Ag is included in the region where the support layer and the upper metal layer are removed and the light emitting diode chip is mounted. A surface mount type light emitting diode lamp according to claim 1.   The surface-mount light-emitting diode lamp according to claim 1, further comprising a light extraction unit on which the light-emitting diode chip is covered.   The surface-mounted light-emitting diode lamp according to claim 6, wherein the light extraction unit further includes an additive for converting light emitted from the chip, such as a fluorescent agent, a diffusing agent, and a dye.   The surface-mount type light emitting diode lamp according to claim 1, further comprising a peeling prevention engagement portion in the support layer and the light reflection layer. Removing a part of the metal layer of the substrate provided with the metal layer on one surface of the support layer and separating the first layer and the second region;
A part of the support layer located above the first region of the metal layer and a part of the support layer located above the second region of the metal layer are respectively removed by irradiating with a laser, and the first region of the lower metal layer is removed. And exposing a part of the second region and mounting the light emitting diode chip on the exposed first region of the lower metal layer to electrically connect each electrode of the diode to the first region and the second region, respectively. A method of manufacturing a surface mount light emitting diode lamp comprising steps.   The method of claim 9, further comprising applying a light reflecting material on top of the support layer. Removing a part of the lower metal layer of the substrate provided with metal layers on both sides of the support layer to separate the first region and the second region;
Forming a laser mask on the upper metal layer located above the first region;
Irradiating the inside of the region indicated by the laser mask with a laser to remove the support layer and exposing a part of the lower metal layer; and a light emitting diode chip in the first region of the exposed lower metal layer. A method of manufacturing a surface-mounted light-emitting diode lamp, the method comprising mounting and electrically connecting each electrode of the diode to a first region and a second region, respectively.   The method according to claim 11, wherein the laser mask is formed by etching away a portion of the upper metal layer.   The method according to claim 9, further comprising forming a reflective structure in a region where the chip is mounted on the exposed lower metal layer.

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