JP2008263205A5 - - Google Patents
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- JP2008263205A5 JP2008263205A5 JP2008104747A JP2008104747A JP2008263205A5 JP 2008263205 A5 JP2008263205 A5 JP 2008263205A5 JP 2008104747 A JP2008104747 A JP 2008104747A JP 2008104747 A JP2008104747 A JP 2008104747A JP 2008263205 A5 JP2008263205 A5 JP 2008263205A5
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- JP
- Japan
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- region
- metal layer
- light
- layer
- lower metal
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Claims (13)
下部金属層の上部に位置する支持層、
支持層の上部に位置する光反射層、
下部金属層の第1領域の上部に位置する支持層および光反射層の一部を除去した部分であるチップ実装部、および
下部金属層の第1領域が露出された下部金属層部分に実装され、ダイオードの各極が下部金属層の第1領域および第2領域に各々電気的に繋がれた発光ダイオードチップを含む表面実装型発光ダイオードランプ。 A lower metal layer separated into a first region and a second region;
A support layer located on top of the lower metal layer,
A light reflecting layer located on top of the support layer,
Mounted on the chip mounting portion, which is a portion from which a part of the support layer and the light reflecting layer located above the first region of the lower metal layer is removed, and the lower metal layer portion where the first region of the lower metal layer is exposed A surface mount type light emitting diode lamp including a light emitting diode chip in which each pole of the diode is electrically connected to the first region and the second region of the lower metal layer.
下部金属層の上部に位置する支持層、
支持層の上部に位置する光反射層、
下部金属層の第1領域の上部に位置する支持層および光反射層の一部を除去した部分であるチップ実装部、下部金属層の第2領域の上部に位置する支持層および光反射層の一部が除去された第2領域露出部、および支持層および光反射層が除去された部分で下部金属層の第1領域および第2領域が露出され、露出された下部金属層の第1領域部分に実装され、露出された下部金属層の第1領域および第2領域にダイオードの各極が各々電気的に繋がれた発光ダイオードチップを含む表面実装型発光ダイオードランプ。 A lower metal layer separated into a first region and a second region;
A support layer located on top of the lower metal layer,
A light reflecting layer located on top of the support layer,
A chip mounting portion which is a portion from which a part of the support layer and the light reflection layer located above the first region of the lower metal layer is removed; and a support layer and a light reflection layer located above the second region of the lower metal layer The second region exposed portion from which a part has been removed, and the first region and second region of the lower metal layer exposed at the portion from which the support layer and the light reflection layer have been removed, and the exposed first region of the lower metal layer A surface-mounted light-emitting diode lamp including a light-emitting diode chip mounted on a portion and exposed to a first region and a second region of a lower metal layer, each of which is electrically connected to each pole of the diode.
支持層の上部に位置する光反射層は金属層からなるものであり、
第1領域の上部に位置する支持層および金属層の一部、および第2領域の上部に位置する支持層および金属層の一部が各々除去された部分において上記の下部金属層の第1領域および第2領域が露出され、上記の露出された下部金属層の第1領域に実装され、上記の露出された下部金属層の第1領域および第2領域に各々電気的に繋がれた発光ダイオードチップを含む表面実装型発光ダイオードランプ。 The light-emitting diode lamp according to claim 1 or 2,
The light reflecting layer located above the support layer is made of a metal layer,
The first region of the lower metal layer in a portion where the support layer and the metal layer located above the first region, and the support layer and the metal layer located above the second region are respectively removed. And a second region exposed, mounted on the first region of the exposed lower metal layer, and electrically connected to the first region and the second region of the exposed lower metal layer, respectively. Surface mount type light emitting diode lamp including chip.
金属層の第1領域の上部に位置する支持層の一部および金属層の第2領域の上部に位置する支持層の一部を各々レーザーで照射して除去し、下部金属層の第1領域および第2領域の一部を露出させる段階、および
露出された下部金属層の第1領域に発光ダイオードチップを実装して、ダイオードの各電極をそれぞれ第1領域および第2領域に電気的に繋ぐ段階を含む、表面実装型発光ダイオードランプを製造する方法。 Removing a part of the metal layer of the substrate provided with the metal layer on one surface of the support layer and separating the first layer and the second region;
A part of the support layer located above the first region of the metal layer and a part of the support layer located above the second region of the metal layer are respectively removed by irradiating with a laser, and the first region of the lower metal layer is removed. And exposing a part of the second region and mounting the light emitting diode chip on the exposed first region of the lower metal layer to electrically connect each electrode of the diode to the first region and the second region, respectively. A method of manufacturing a surface mount light emitting diode lamp comprising steps.
第1領域の上部に位置する上部金属層にレーザーマスクを形成する段階、
レーザーマスクで表示された領域の内部にレーザーを照射して支持層を除去し、下部金属層の一部を露出させる段階、 および
上記の露出された下部金属層の第1領域に発光ダイオードチップを実装して、ダイオードの各電極をそれぞれ第1領域および第2領域に電気的に繋ぐ段階を含む、表面実装型発光ダイオードランプを製造する方法。 Removing a part of the lower metal layer of the substrate provided with metal layers on both sides of the support layer to separate the first region and the second region;
Forming a laser mask on the upper metal layer located above the first region;
Irradiating the inside of the region indicated by the laser mask with a laser to remove the support layer and exposing a part of the lower metal layer; and a light emitting diode chip in the first region of the exposed lower metal layer. A method of manufacturing a surface-mounted light-emitting diode lamp, the method comprising mounting and electrically connecting each electrode of the diode to a first region and a second region, respectively.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070036197A KR100853963B1 (en) | 2007-04-12 | 2007-04-12 | Very high current smd led lamp using pcb |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008263205A JP2008263205A (en) | 2008-10-30 |
JP2008263205A5 true JP2008263205A5 (en) | 2012-06-07 |
Family
ID=39878536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008104747A Pending JP2008263205A (en) | 2007-04-12 | 2008-04-14 | High-current surface mount type light-emitting diode lamp using printed circuit board |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2008263205A (en) |
KR (1) | KR100853963B1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101158497B1 (en) * | 2010-05-18 | 2012-06-21 | 엘지이노텍 주식회사 | Tape type light package and manufacturing method of the same |
TWI472067B (en) * | 2010-04-28 | 2015-02-01 | Lg Innotek Co Ltd | Optical package and method of manufacturing the same |
KR101146659B1 (en) * | 2010-05-04 | 2012-05-22 | 엘지이노텍 주식회사 | Optical package and manufacturing method of the same |
KR101146656B1 (en) * | 2010-05-04 | 2012-05-22 | 엘지이노텍 주식회사 | Optical package and manufacturing method of the same |
KR101136392B1 (en) * | 2010-05-04 | 2012-04-18 | 엘지이노텍 주식회사 | Optical package and manufacturing method of the same |
WO2011136470A2 (en) * | 2010-04-28 | 2011-11-03 | Lg Innotek Co., Ltd. | Optical package and manufacturing method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920010982A (en) * | 1990-11-15 | 1992-06-27 | 더-종첸 | Improved LED Display Board with PCB Substrate |
JP3535602B2 (en) * | 1995-03-23 | 2004-06-07 | 松下電器産業株式会社 | Surface mount type LED |
JP3640153B2 (en) | 1999-11-18 | 2005-04-20 | 松下電工株式会社 | Illumination light source |
US6949771B2 (en) | 2001-04-25 | 2005-09-27 | Agilent Technologies, Inc. | Light source |
KR100602847B1 (en) * | 2004-02-27 | 2006-07-19 | 럭스피아 주식회사 | ??? mounted a radiator and ??? package using the ??? and method manufacturing them |
-
2007
- 2007-04-12 KR KR1020070036197A patent/KR100853963B1/en active IP Right Grant
-
2008
- 2008-04-14 JP JP2008104747A patent/JP2008263205A/en active Pending
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