WO2011136470A2 - Optical package and manufacturing method thereof - Google Patents

Optical package and manufacturing method thereof Download PDF

Info

Publication number
WO2011136470A2
WO2011136470A2 PCT/KR2011/001461 KR2011001461W WO2011136470A2 WO 2011136470 A2 WO2011136470 A2 WO 2011136470A2 KR 2011001461 W KR2011001461 W KR 2011001461W WO 2011136470 A2 WO2011136470 A2 WO 2011136470A2
Authority
WO
WIPO (PCT)
Prior art keywords
circuit pattern
pattern layer
optical
layer
optical package
Prior art date
Application number
PCT/KR2011/001461
Other languages
French (fr)
Other versions
WO2011136470A3 (en
Inventor
Jee Heum Paik
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100039701A external-priority patent/KR101051690B1/en
Priority claimed from KR1020100046346A external-priority patent/KR101158497B1/en
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Publication of WO2011136470A2 publication Critical patent/WO2011136470A2/en
Publication of WO2011136470A3 publication Critical patent/WO2011136470A3/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Definitions

  • the present invention relates to an optical package and a manufacturing method thereof and, more particularly, to an optical package and a manufacturing method thereof to reduce the volume and thickness of the optical package and improve the integration and optical efficiency of the optical package.
  • a light emitting diode is an intermetallic compound junction diode which generates minority carriers (electrons or holes) using p-n junction of semiconductor and converts electric energy into light energy according to recombination of electrons and holes to thereby emit light. More specifically, when a forward voltage is applied to a specific semiconductor element, electrons and holes move through the junction of positive and negative electrodes and are recombined. Here, recombined electrons and holes have energy smaller than the energy of electrons and holes before being recombined, and thus light is emitted due to the energy difference.
  • the LED has wide application including general display devices, lighting devices and LCD backlight units, etc. Particularly, the LED has advantages of low heat and a long life due to a low driving voltage and high energy efficiency. The LED is expected to replace currently used most light source devices with the development of techniques capable of providing white light with high luminance.
  • FIG. 1 is a cross-sectional view of a conventional LED package.
  • the LED package is constructed in such a manner that a gold wire 102 is connected to a light-emitting GaN compound chip 60 through bonding and a heat sink 10 is formed under the GaN compound chip to radiate heat.
  • a metal lead 20 is connected to an external support and the LED package through wire bonding and electricity is applied through the metal lead 20 to emit light.
  • the individual chip 60 having this structure is mounted in s a single package.
  • the conventional LED package has a lead type package form.
  • the lead frame type package is difficult to integrate LED chips due to a small package available area. Furthermore, the package size against the chip size is relatively large, and thus the thickness or external area of a product having the lead frame type package mounted therein is increased. Moreover, the heat sink is required to radiate heat generated from the LED chip to result in increases in the thickness and volume of the LED package.
  • FIG. 2 illustrates another conventional LED package.
  • a plastic lens 25 is used to improve straightness of light and optical efficiency. This causes a limitation in reducing the size of the LED package and increases manufacturing cost.
  • the present invention provides an optical package and a manufacturing method thereof to reduce the volume and thickness of the optical package at a low cost so as to achieve a small-sized highly integrated LED chip and plate a metal layer functioning as a heat sink and a support with a light-reflecting material to improve optical efficiency.
  • an optical package comprising an insulating layer including a hole, formed on a circuit pattern layer formed of a conductive material; an optical element bonded onto a portion of the circuit pattern layer, exposed through the hole; a connector electrically connecting the optical element and the circuit pattern layer; and a resin part burying the optical element and the connector.
  • the portion of the circuit pattern layer, exposed through the hole, may have a light reflecting layer formed thereon.
  • the light reflecting layer may be also formed on the backside of the circuit pattern layer on which the insulating layer is formed and the light reflecting layer may include Ag.
  • the optical package may further comprise a solder resist layer that is formed on the insulating layer and forms a barrier around the optical element and the connector, and the resin part may be formed inside the barrier composed of the solder resist layer and bury the optical element and the connector.
  • the conductive material may be Cu.
  • the outer surface of the circuit pattern layer and the connector may be formed of one of Au, Al and Cu.
  • the insulating layer may be a polyimide film.
  • the resin part may be formed of phosphor and transparent resin and the transparent resin may be silicon.
  • the resin part may have a flat surface or a convex lens shape.
  • the resin part may bury at least part of the insulating layer.
  • a method of manufacturing an optical package which comprises a step (a) of forming a hole in an insulating layer; a step (b) of forming a circuit pattern layer of a conductive material under the insulating layer; a step (c) of bonding an optical element onto a portion of the circuit pattern layer, exposed through the hole; a step (d) of electrically connecting the optical element to an exposed portion of the circuit pattern layer, which is separated from the portion of the circuit pattern layer onto which the optical element is bonded through a connector; and a step (e) of forming a resin part burying the optical element and the connector.
  • the step (c) forms a light reflecting layer on the portion of the circuit pattern layer, exposed through the hole, through plating and bonds the optical element onto the circuit pattern layer.
  • the step (c) forms the light reflecting layer on the backside of the circuit pattern layer on which the insulating layer is formed through plating.
  • the manufacturing method may further comprise the step of forming a solder resist layer on the insulating layer to construct a barrier around the portion of the circuit pattern layer, exposed through the hole, between the steps (b) and (c), The step (e) forms the resin part inside the barrier composed of the solder resist layer to bury the optical element and the connector.
  • the step (b) may comprise the step of plating the outer surface of the circuit pattern layer with gold and the connector may be formed of gold.
  • the resin part may include phosphor and transparent resin.
  • the step (e) may form the resin part having a flat surface or over-coat the phosphor and transparent resin to form a resin part in the form of a convex lens.
  • an optical package is formed using a tape board to reduce the volume and thickness of the optical package. Furthermore, a surface emission type package instead of a conventional dot emission type package can be manufactured to produce a highly integrated package. Moreover, encapsulation and formation of a lens are simultaneously performed to reduce the manufacturing cost and simplify the manufacturing process to improve productivity and increase optical efficiency through a light reflecting layer formed through plating.
  • FIG. 1 is a cross-sectional view of a conventional optical package
  • FIG. 2 illustrates another conventional optical package
  • FIG. 3 is a cross-sectional view showing a process of manufacturing an optical package according to a first embodiment of the present invention
  • FIG. 4 is a cross-sectional view for comparing the optical package according to the first embodiment of the present invention to the conventional optical package shown in FIG. 1;
  • FIG. 5 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the first embodiment of the present invention
  • FIG. 6 is a view for explaining the degree of integration of the optical package according to the first embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing a process of manufacturing an optical package according to a second embodiment of the present invention.
  • FIG. 8 is a cross-sectional view for comparing the optical package according to the second embodiment of the present invention to the conventional optical package shown in FIG. 1;
  • FIG. 9 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the second embodiment of the present invention.
  • FIG. 10 is a view for explaining the degree of integration of the optical package according to the second embodiment of the present invention.
  • FIG. 11 is a cross-sectional view showing a process of manufacturing an optical package according to a third embodiment of the present invention.
  • FIG. 12 is a cross-sectional view for comparing the optical package according to the third embodiment of the present invention to the conventional optical package shown in FIG. 1;
  • FIG. 13 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the third embodiment of the present invention.
  • FIG. 14 is a view for explaining the degree of integration of the optical package according to the third embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a process of manufacturing an optical package according to a first embodiment of the present invention.
  • holes 105 and 106 are formed in an insulating film, for example, a polyimide film 103, through punching in step S2.
  • the holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which a connector (for example, a wire) passes to supply power to the optical element.
  • Copper foil is laminated on the polyimide film 103 having the holes 105 and 106 in step S3.
  • the exposed surface is activated through chemical treatment, and photoresist is coated on the surface, exposed and developed. After the developing process, a required circuit is formed through etching and the photoresist is stripped off to form a circuit pattern layer 104 in step S4.
  • solder resist 101 is coated on portions of the surface of the polyimide layer 103 other than a portion for bonding and holes for supplying external power in step S5.
  • the solder resist 101 is coated to form a barrier that surround a die pad portion of the circuit pattern layer 104, onto which the optical element will be bonded, and portions of the circuit pattern layer 104, which are connected to the optical element through wire bonding.
  • the solder resist barrier 101 formed in this manner can protect the circuit pattern layer 104 and form a solder resist dam to allow phosphor to be laterally coated inside the solder resist dam.
  • the optical element 60 is bonded onto a portion of the copper foil surface on the polyimide film 103, on which the optical element 60 will be located, that is, the die pad portion, through die bonding in step S6. Then, a wire 102 formed of gold is electrically connected to a portion of the circuit pattern layer 104, which is isolated from the die pad portion through the via-hole 106, to provide power to the optical element 60 in step S7.
  • a resin part 100a is formed inside the solder resist barrier 101 to bury the optical element 60 and the wire 102 in step S8. Specifically, phosphor and transparent resin composed for white LED are coated inside the solder resist barrier 101 to form the resin part 100a with a flat surface to thereby accomplish the optical package.
  • FIG. 4 is a cross-sectional view for comparing the optical package according to the first embodiment of the present invention to the conventional optical package shown in FIG. 1.
  • the present invention can achieve the small-size integrated optical package through the film type insulating layer 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using the heat sink 10 and the metal lead 20 of the conventional optical package.
  • FIG. 5 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the first embodiment of the present invention.
  • the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right part of FIG. 4).
  • FIG. 6 is a view for showing the degree of integration of the optical package according to the first embodiment of the present invention.
  • a very large number of optical packages according to the present invention can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 6, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 6.
  • FIG. 7 is a cross-sectional view showing a process of manufacturing an optical package according to a second embodiment of the present invention.
  • the holes 105 and 106 are formed in an insulating film, for example, the polyimide film 103, through punching in step S1.
  • the holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which a wire passes to supply power to the optical element.
  • Copper foil is laminated on the polyimide film 103 having the holes 105 and 106 in step S2.
  • the exposed surface is activated through chemical treatment, and photoresist is coated on the surface, exposed and developed. After the developing process, a required circuit is formed through etching and the photoresist is stripped off to form the circuit pattern layer 104 in step S3.
  • solder resist 101 is coated on portions of the surface of the polyimide film 103 other than a portion for bonding and holes for supplying external power in step S4. More specifically, the solder resist 101 is coated to form a barrier that surrounds a die pad portion of the circuit pattern layer 104, onto which the optical element will be bonded, and portions of the circuit pattern layer 104, which are connected to the optical element through wire bonding.
  • the optical element 60 is bonded onto a predetermined portion of the copper foil laminated on the polyimide film 103, on which the optical element 60 will be located, that is, the die pad portion, through die bonding in step S5.
  • the wire 102 formed of gold is electrically connected to a portion of the circuit pattern layer 104, which is insulated from the die pad portion through the via-hole 106 to as to provide power to the optical element 60 in step S6.
  • a resin part 100b is formed inside the solder resist barrier 101 to bury the optical element 60 and the wire 102 in step S7.
  • phosphor and transparent resin composed for white LED are over-coated inside the solder resist barrier 101 to form the resin part 100b in a convex lens form to thereby accomplish the optical package.
  • the convex lens shaped resin part 100b is formed due to surface tension, as shown in FIG. 7. Accordingly, the resin part and a plastic lens can be simultaneously formed.
  • FIG. 8 is a cross-sectional view for comparing the optical package according to the second embodiment of the present invention to the conventional optical package shown in FIG. 1.
  • the present invention can achieve the small-size integrated optical package through the film type insulating layer 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using the heat sink 10 and the metal lead 20 of the conventional optical package.
  • the optical package of the present invention includes the resin part 101b having both a resin function and a plastic lens function to improve straightness of light and optical efficiency.
  • FIG. 9 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the second embodiment of the present invention.
  • the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right part of FIG. 9).
  • FIG. 10 is a view for showing the degree of integration of the optical package according to the second embodiment of the present invention.
  • a very large number of optical packages according to the present invention which have the resin part and the plastic lens, can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 10, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 10.
  • FIG. 11 is a cross-sectional view showing a process of manufacturing an optical package according to a third embodiment of the present invention.
  • the holes 105 and 106 are formed in an insulating film, for example, the polyimide film 103, through punching in step S2.
  • the holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which the wire 102 as a connector passes to supply power to the optical element 60.
  • a metal layer 104 is laminated on the polyimide film 103 having the holes 105 and 106 in step S3.
  • the metal layer 103 may be copper.
  • solder resist is coated on the insulating film 103, that is, on portions of the surface of the circuit pattern layer 104 other than the portion corresponding to the hole 105 for bonding and the via-hole 106 for supplying external power and printed to form the solder resist layer 101 in step S4.
  • the surface of the circuit pattern layer 104, exposed through the holes 105 and 106, is plated to form a light reflecting layer 107 such that the surface of the circuit pattern layer 104 is processed to be bondable in step S5.
  • the light reflecting layer 107 may be formed on the backside of the circuit pattern layer 104.
  • the surface of the circuit pattern layer 104 may be plated with Ag to form the light reflecting layer 107.
  • the optical element 60 is mounted on the portion of the light reflecting layer 107, which corresponds to the hole 105, through die bonding in step S6.
  • the optical element 60 may be an LED chip and may be mounted using an adhesive.
  • the wire 102 formed of gold is bonded onto the light reflecting layer 107 to electrically connect the circuit pattern layer 104 and the LED chip 60 in step S7.
  • a resin part 100 is formed to bury the LED chip 60 and the wire 102 in step S8.
  • phosphor and transparent resin composed for white LED are over-coated inside the solder resist pattern 101 to form the resin part 100 in a convex lens form. Accordingly, encapsulation and formation of a plastic lens can be simultaneously performed.
  • FIG. 12 is a cross-sectional view for comparing the optical package according to the third embodiment of the present invention to the conventional optical package shown in FIG. 1.
  • the insulating film 103 including the holes is formed on the metal layer 104 corresponding to the circuit pattern layer and the light reflecting layer 107 is formed on the surface of the metal layer 104, exposed through the holes, through plating.
  • the solder resist layer 101 is formed on the insulating film 103, the insulating film 103 is a polyimide film and the metal layer 104 is formed of copper.
  • the light reflecting layer 107 is also formed on the backside of the metal layer 104 having the insulating film 103 formed on the front surface thereof and the light reflecting layer 107 is plated with Ag. That is, the light reflecting layer 107 is formed through silver plating instead of gold plating to increase luminance and thermal conductivity so as to improve radiation of heat generated from the LED chip 60 and increase reflectivity so as to prevent light absorption and maximize optical efficiency.
  • the optical package in the present embodiment of the invention is in the form of a tape type LED package in which the LED chip is mounted on the light reflecting layer 107 as the optical element 60 and electrically connected to the circuit pattern layer 104 through the wire 102 and the LED chip 60 and the wire 102 are buried with the resin part 100.
  • the resin part 100 is in the form of a convex lens and includes phosphor or transparent resin.
  • the transparent resin may be silicon.
  • the present invention can achieve the small-size integrated optical package through the insulating film 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using a heat sink and a metal lead. Furthermore, the circuit pattern layer 104 formed under the insulating film 103 functions as a heat sink as well as a circuit board. Moreover, the bonding force of wire bonding can be improved due to RZ difference according to surface roughness.
  • FIG. 13 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the third embodiment of the present invention.
  • the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right portion of FIG. 13).
  • FIG. 14 is a view for showing the degree of integration of the optical package according to the third embodiment of the present invention.
  • a very large number of optical packages according to the present invention can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 6, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 14.

Abstract

An optical package and a manufacturing method thereof are provided. The optical package includes an insulating layer including a hole, formed on a circuit pattern layer formed of a conductive material; an optical element bonded onto a portion of the circuit pattern layer, exposed through the hole; a connector electrically connecting the optical element and the circuit pattern layer; and a resin part burying the optical element and the connector. Accordingly, the optical package is formed using a tape board to reduce the volume and thickness of the optical package. Furthermore, a surface emission type package instead of a conventional dot emission type package can be manufactured to produce a highly integrated package. Moreover, encapsulation and formation of a lens are simultaneously performed to reduce the manufacturing cost and simplify the manufacturing process to improve productivity and increase optical efficiency through a light reflecting layer formed through plating.

Description

OPTICAL PACKAGE AND MANUFACTURING METHOD THEREOF
The present invention relates to an optical package and a manufacturing method thereof and, more particularly, to an optical package and a manufacturing method thereof to reduce the volume and thickness of the optical package and improve the integration and optical efficiency of the optical package.
A light emitting diode (LED) is an intermetallic compound junction diode which generates minority carriers (electrons or holes) using p-n junction of semiconductor and converts electric energy into light energy according to recombination of electrons and holes to thereby emit light. More specifically, when a forward voltage is applied to a specific semiconductor element, electrons and holes move through the junction of positive and negative electrodes and are recombined. Here, recombined electrons and holes have energy smaller than the energy of electrons and holes before being recombined, and thus light is emitted due to the energy difference. The LED has wide application including general display devices, lighting devices and LCD backlight units, etc. Particularly, the LED has advantages of low heat and a long life due to a low driving voltage and high energy efficiency. The LED is expected to replace currently used most light source devices with the development of techniques capable of providing white light with high luminance.
FIG. 1 is a cross-sectional view of a conventional LED package. Referring to FIG. 1, the LED package is constructed in such a manner that a gold wire 102 is connected to a light-emitting GaN compound chip 60 through bonding and a heat sink 10 is formed under the GaN compound chip to radiate heat. In addition, a metal lead 20 is connected to an external support and the LED package through wire bonding and electricity is applied through the metal lead 20 to emit light. The individual chip 60 having this structure is mounted in s a single package.
The conventional LED package has a lead type package form.
However, the lead frame type package is difficult to integrate LED chips due to a small package available area. Furthermore, the package size against the chip size is relatively large, and thus the thickness or external area of a product having the lead frame type package mounted therein is increased. Moreover, the heat sink is required to radiate heat generated from the LED chip to result in increases in the thickness and volume of the LED package.
FIG. 2 illustrates another conventional LED package. Referring to FIG. 2, after phosphor and resin composite is coated through an encapsulation process for protecting the wire 102, a plastic lens 25 is used to improve straightness of light and optical efficiency. This causes a limitation in reducing the size of the LED package and increases manufacturing cost.
Accordingly, a technique capable of manufacturing a small-size LED package through a simplified process at a low cost is required.
The present invention provides an optical package and a manufacturing method thereof to reduce the volume and thickness of the optical package at a low cost so as to achieve a small-sized highly integrated LED chip and plate a metal layer functioning as a heat sink and a support with a light-reflecting material to improve optical efficiency.
According to an aspect of the present invention, there is provided an optical package comprising an insulating layer including a hole, formed on a circuit pattern layer formed of a conductive material; an optical element bonded onto a portion of the circuit pattern layer, exposed through the hole; a connector electrically connecting the optical element and the circuit pattern layer; and a resin part burying the optical element and the connector.
The portion of the circuit pattern layer, exposed through the hole, may have a light reflecting layer formed thereon. In this case, the light reflecting layer may be also formed on the backside of the circuit pattern layer on which the insulating layer is formed and the light reflecting layer may include Ag.
The optical package may further comprise a solder resist layer that is formed on the insulating layer and forms a barrier around the optical element and the connector, and the resin part may be formed inside the barrier composed of the solder resist layer and bury the optical element and the connector.
The conductive material may be Cu.
The outer surface of the circuit pattern layer and the connector may be formed of one of Au, Al and Cu.
The insulating layer may be a polyimide film.
The resin part may be formed of phosphor and transparent resin and the transparent resin may be silicon.
The resin part may have a flat surface or a convex lens shape.
The resin part may bury at least part of the insulating layer.
According to another aspect of the present invention, there is provided a method of manufacturing an optical package, which comprises a step (a) of forming a hole in an insulating layer; a step (b) of forming a circuit pattern layer of a conductive material under the insulating layer; a step (c) of bonding an optical element onto a portion of the circuit pattern layer, exposed through the hole; a step (d) of electrically connecting the optical element to an exposed portion of the circuit pattern layer, which is separated from the portion of the circuit pattern layer onto which the optical element is bonded through a connector; and a step (e) of forming a resin part burying the optical element and the connector.
The step (c) forms a light reflecting layer on the portion of the circuit pattern layer, exposed through the hole, through plating and bonds the optical element onto the circuit pattern layer. In this case, the step (c) forms the light reflecting layer on the backside of the circuit pattern layer on which the insulating layer is formed through plating.
The manufacturing method may further comprise the step of forming a solder resist layer on the insulating layer to construct a barrier around the portion of the circuit pattern layer, exposed through the hole, between the steps (b) and (c), The step (e) forms the resin part inside the barrier composed of the solder resist layer to bury the optical element and the connector.
The step (b) may comprise the step of plating the outer surface of the circuit pattern layer with gold and the connector may be formed of gold.
The resin part may include phosphor and transparent resin. In this case, the step (e) may form the resin part having a flat surface or over-coat the phosphor and transparent resin to form a resin part in the form of a convex lens.
According to the present invention, an optical package is formed using a tape board to reduce the volume and thickness of the optical package. Furthermore, a surface emission type package instead of a conventional dot emission type package can be manufactured to produce a highly integrated package. Moreover, encapsulation and formation of a lens are simultaneously performed to reduce the manufacturing cost and simplify the manufacturing process to improve productivity and increase optical efficiency through a light reflecting layer formed through plating.
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
FIG. 1 is a cross-sectional view of a conventional optical package;
FIG. 2 illustrates another conventional optical package;
FIG. 3 is a cross-sectional view showing a process of manufacturing an optical package according to a first embodiment of the present invention;
FIG. 4 is a cross-sectional view for comparing the optical package according to the first embodiment of the present invention to the conventional optical package shown in FIG. 1;
FIG. 5 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the first embodiment of the present invention;
FIG. 6 is a view for explaining the degree of integration of the optical package according to the first embodiment of the present invention;
FIG. 7 is a cross-sectional view showing a process of manufacturing an optical package according to a second embodiment of the present invention;
FIG. 8 is a cross-sectional view for comparing the optical package according to the second embodiment of the present invention to the conventional optical package shown in FIG. 1;
FIG. 9 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the second embodiment of the present invention;
FIG. 10 is a view for explaining the degree of integration of the optical package according to the second embodiment of the present invention;
FIG. 11 is a cross-sectional view showing a process of manufacturing an optical package according to a third embodiment of the present invention;
FIG. 12 is a cross-sectional view for comparing the optical package according to the third embodiment of the present invention to the conventional optical package shown in FIG. 1;
FIG. 13 is a plan view showing a polyimide film and a circuit pattern layer of the optical package according to the third embodiment of the present invention; and
FIG. 14 is a view for explaining the degree of integration of the optical package according to the third embodiment of the present invention.
The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
FIG. 3 is a cross-sectional view showing a process of manufacturing an optical package according to a first embodiment of the present invention.
Referring to FIG. 3, holes 105 and 106 are formed in an insulating film, for example, a polyimide film 103, through punching in step S2. The holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which a connector (for example, a wire) passes to supply power to the optical element. Copper foil is laminated on the polyimide film 103 having the holes 105 and 106 in step S3. Then, the exposed surface is activated through chemical treatment, and photoresist is coated on the surface, exposed and developed. After the developing process, a required circuit is formed through etching and the photoresist is stripped off to form a circuit pattern layer 104 in step S4.
Subsequently, gold plating is performed on the circuit pattern layer 104 and the holes 105 and 106 to process the surfaces of the circuit pattern layer 104 and the holes 105 and 106 to be bondable, and solder resist 101 is coated on portions of the surface of the polyimide layer 103 other than a portion for bonding and holes for supplying external power in step S5. Specifically, the solder resist 101 is coated to form a barrier that surround a die pad portion of the circuit pattern layer 104, onto which the optical element will be bonded, and portions of the circuit pattern layer 104, which are connected to the optical element through wire bonding. The solder resist barrier 101 formed in this manner can protect the circuit pattern layer 104 and form a solder resist dam to allow phosphor to be laterally coated inside the solder resist dam.
The optical element 60 is bonded onto a portion of the copper foil surface on the polyimide film 103, on which the optical element 60 will be located, that is, the die pad portion, through die bonding in step S6. Then, a wire 102 formed of gold is electrically connected to a portion of the circuit pattern layer 104, which is isolated from the die pad portion through the via-hole 106, to provide power to the optical element 60 in step S7. A resin part 100a is formed inside the solder resist barrier 101 to bury the optical element 60 and the wire 102 in step S8. Specifically, phosphor and transparent resin composed for white LED are coated inside the solder resist barrier 101 to form the resin part 100a with a flat surface to thereby accomplish the optical package.
FIG. 4 is a cross-sectional view for comparing the optical package according to the first embodiment of the present invention to the conventional optical package shown in FIG. 1. Referring to FIG. 4, the present invention can achieve the small-size integrated optical package through the film type insulating layer 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using the heat sink 10 and the metal lead 20 of the conventional optical package.
FIG. 5 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the first embodiment of the present invention. Referring to FIG. 5, the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right part of FIG. 4).
FIG. 6 is a view for showing the degree of integration of the optical package according to the first embodiment of the present invention. Referring to FIG. 6, a very large number of optical packages according to the present invention can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 6, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 6.
FIG. 7 is a cross-sectional view showing a process of manufacturing an optical package according to a second embodiment of the present invention. Referring to FIG. 7, the holes 105 and 106 are formed in an insulating film, for example, the polyimide film 103, through punching in step S1. The holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which a wire passes to supply power to the optical element. Copper foil is laminated on the polyimide film 103 having the holes 105 and 106 in step S2. Then, the exposed surface is activated through chemical treatment, and photoresist is coated on the surface, exposed and developed. After the developing process, a required circuit is formed through etching and the photoresist is stripped off to form the circuit pattern layer 104 in step S3.
Subsequently, gold plating is performed on the circuit pattern layer 104 and the holes 105 and 106 to process the surfaces of the circuit pattern layer 104 and the holes 105 and 106 to be bondable, and the solder resist 101 is coated on portions of the surface of the polyimide film 103 other than a portion for bonding and holes for supplying external power in step S4. More specifically, the solder resist 101 is coated to form a barrier that surrounds a die pad portion of the circuit pattern layer 104, onto which the optical element will be bonded, and portions of the circuit pattern layer 104, which are connected to the optical element through wire bonding.
The optical element 60 is bonded onto a predetermined portion of the copper foil laminated on the polyimide film 103, on which the optical element 60 will be located, that is, the die pad portion, through die bonding in step S5. Then, the wire 102 formed of gold is electrically connected to a portion of the circuit pattern layer 104, which is insulated from the die pad portion through the via-hole 106 to as to provide power to the optical element 60 in step S6. A resin part 100b is formed inside the solder resist barrier 101 to bury the optical element 60 and the wire 102 in step S7. Specifically, phosphor and transparent resin composed for white LED are over-coated inside the solder resist barrier 101 to form the resin part 100b in a convex lens form to thereby accomplish the optical package. When the phosphor and transparent resin are over-coated, the convex lens shaped resin part 100b is formed due to surface tension, as shown in FIG. 7. Accordingly, the resin part and a plastic lens can be simultaneously formed.
FIG. 8 is a cross-sectional view for comparing the optical package according to the second embodiment of the present invention to the conventional optical package shown in FIG. 1. Referring to FIG. 8, the present invention can achieve the small-size integrated optical package through the film type insulating layer 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using the heat sink 10 and the metal lead 20 of the conventional optical package. Furthermore, the optical package of the present invention includes the resin part 101b having both a resin function and a plastic lens function to improve straightness of light and optical efficiency.
FIG. 9 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the second embodiment of the present invention. Referring to FIG. 9, the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right part of FIG. 9).
FIG. 10 is a view for showing the degree of integration of the optical package according to the second embodiment of the present invention. Referring to FIG. 10, a very large number of optical packages according to the present invention, which have the resin part and the plastic lens, can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 10, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 10.
FIG. 11 is a cross-sectional view showing a process of manufacturing an optical package according to a third embodiment of the present invention. Referring to FIG. 11, the holes 105 and 106 are formed in an insulating film, for example, the polyimide film 103, through punching in step S2. The holes include a device hole 105 corresponding to a central hole in which an optical element will be located and a via-hole 106 through which the wire 102 as a connector passes to supply power to the optical element 60. Then, a metal layer 104 is laminated on the polyimide film 103 having the holes 105 and 106 in step S3. Here, the metal layer 103 may be copper.
Subsequently, the exposed surface is activated through chemical treatment, and photoresist is coated on the surface, exposed and developed. After the developing process, a required circuit is formed through etching and the photoresist is stripped off to form the circuit pattern layer 104. Solder resist is coated on the insulating film 103, that is, on portions of the surface of the circuit pattern layer 104 other than the portion corresponding to the hole 105 for bonding and the via-hole 106 for supplying external power and printed to form the solder resist layer 101 in step S4.
The surface of the circuit pattern layer 104, exposed through the holes 105 and 106, is plated to form a light reflecting layer 107 such that the surface of the circuit pattern layer 104 is processed to be bondable in step S5. In this case, the light reflecting layer 107 may be formed on the backside of the circuit pattern layer 104. In addition, the surface of the circuit pattern layer 104 may be plated with Ag to form the light reflecting layer 107. When silver plating instead of gold plating is performed on the circuit pattern layer 104, it is possible to reduce absorption of light in the polyimide film 103 and improve light efficiency.
Subsequently, the optical element 60 is mounted on the portion of the light reflecting layer 107, which corresponds to the hole 105, through die bonding in step S6. The optical element 60 may be an LED chip and may be mounted using an adhesive. Then, the wire 102 formed of gold is bonded onto the light reflecting layer 107 to electrically connect the circuit pattern layer 104 and the LED chip 60 in step S7. A resin part 100 is formed to bury the LED chip 60 and the wire 102 in step S8. Specifically, phosphor and transparent resin composed for white LED are over-coated inside the solder resist pattern 101 to form the resin part 100 in a convex lens form. Accordingly, encapsulation and formation of a plastic lens can be simultaneously performed.
FIG. 12 is a cross-sectional view for comparing the optical package according to the third embodiment of the present invention to the conventional optical package shown in FIG. 1. Referring to FIG. 12, the insulating film 103 including the holes is formed on the metal layer 104 corresponding to the circuit pattern layer and the light reflecting layer 107 is formed on the surface of the metal layer 104, exposed through the holes, through plating. Here, it is desirable that the solder resist layer 101 is formed on the insulating film 103, the insulating film 103 is a polyimide film and the metal layer 104 is formed of copper. In addition, it is desirable that the light reflecting layer 107 is also formed on the backside of the metal layer 104 having the insulating film 103 formed on the front surface thereof and the light reflecting layer 107 is plated with Ag. That is, the light reflecting layer 107 is formed through silver plating instead of gold plating to increase luminance and thermal conductivity so as to improve radiation of heat generated from the LED chip 60 and increase reflectivity so as to prevent light absorption and maximize optical efficiency.
Furthermore, the optical package in the present embodiment of the invention is in the form of a tape type LED package in which the LED chip is mounted on the light reflecting layer 107 as the optical element 60 and electrically connected to the circuit pattern layer 104 through the wire 102 and the LED chip 60 and the wire 102 are buried with the resin part 100. Here, the resin part 100 is in the form of a convex lens and includes phosphor or transparent resin. The transparent resin may be silicon.
As described above, the present invention can achieve the small-size integrated optical package through the insulating film 103 and the circuit pattern layer 104 formed under the insulating layer 103 without using a heat sink and a metal lead. Furthermore, the circuit pattern layer 104 formed under the insulating film 103 functions as a heat sink as well as a circuit board. Moreover, the bonding force of wire bonding can be improved due to RZ difference according to surface roughness.
FIG. 13 is a plan view showing the polyimide film and the circuit pattern layer of the optical package according to the third embodiment of the present invention. Referring to FIG. 13, the optical package of the present invention has a degree of integration much higher than that of the conventional optical package (shown in the right portion of FIG. 13).
FIG. 14 is a view for showing the degree of integration of the optical package according to the third embodiment of the present invention. Referring to FIG. 14, a very large number of optical packages according to the present invention can be arranged in an area having a predetermined size, as shown in the right part of the FIG. 6, as compared to the conventional optical packages having the metal lead and the heat sink, arranged in an area having the same size, as shown in the left part of the FIG. 14.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.

Claims (19)

  1. An optical package comprising:
    an insulating layer including a hole, formed on a circuit pattern layer formed of a conductive material;
    an optical element bonded onto a portion of the circuit pattern layer, exposed through the hole;
    a connector electrically connecting the optical element and the circuit pattern layer; and
    a resin part burying the optical element and the connector.
  2. The optical package of claim 1, wherein the portion of the circuit pattern layer, exposed through the hole, has a light reflecting layer formed thereon.
  3. The optical package of claim 2, wherein the light reflecting layer is formed on the backside of the circuit pattern layer on which the insulating layer is formed.
  4. The optical package of claim 3, wherein the light reflecting layer includes Ag.
  5. The optical package of claim 1 or 2, further comprising a solder resist layer that is formed on the insulating layer and forms a barrier around the optical element and the connector,
    wherein the resin part is formed inside the barrier composed of the solder resist layer and buries the optical element and the connector.
  6. The optical package of claim 1 or 2, wherein the conductive material is Cu.
  7. The optical package of claim 1, wherein the outer surface of the circuit pattern layer and the connector are formed of one of Au, Al and Cu.
  8. The optical package of claim 1 or 2, wherein the insulating layer is a polyimide film.
  9. The optical package of claim 1 or 2, wherein the resin part is formed of phosphor and transparent resin.
  10. The optical package of claim 9, wherein the transparent resin is silicon.
  11. The optical package of claim 1 or 2, wherein the resin part has a flat surface or a convex lens shape.
  12. The optical package of claim 1, wherein the resin part buries at least part of the insulating layer.
  13. A method of manufacturing an optical package, comprising:
    a step (a) of forming a hole in an insulating layer;
    a step (b) of forming a circuit pattern layer of a conductive material under the insulating layer;
    a step (c) of bonding an optical element onto a portion of the circuit pattern layer, exposed through the hole;
    a step (d) of electrically connecting the optical element to an exposed portion of the circuit pattern layer, which is separated from the portion of the circuit pattern layer onto which the optical element is bonded through a connector; and
    a step (e) of forming a resin part burying the optical element and the connector.
  14. The method of claim 13, wherein the step (c) forms a light reflecting layer on the portion of the circuit pattern layer, exposed through the hole, through plating and bonds the optical element onto the circuit pattern layer.
  15. The method of claim 14, wherein the step (c) forms the light reflecting layer on the backside of the circuit pattern layer on which the insulating layer is formed through plating.
  16. The method of claim 13 or 14, further comprising the step of forming a solder resist layer on the insulating layer to construct a barrier around the portion of the circuit pattern layer, exposed through the hole, between the steps (b) and (c),
    wherein the step (e) forms the resin part inside the barrier composed of the solder resist layer to bury the optical element and the connector.
  17. The method of claim 13, wherein the step (b) comprises the step of plating the outer surface of the circuit pattern layer with gold.
  18. The method of claim 16, wherein the resin part includes phosphor and transparent resin.
  19. The method of claim 18, wherein the step (e) forms the resin part having a flat surface or over-coats the phosphor and transparent resin to form a resin part in the form of a convex lens.
PCT/KR2011/001461 2010-04-28 2011-03-03 Optical package and manufacturing method thereof WO2011136470A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0039701 2010-04-28
KR1020100039701A KR101051690B1 (en) 2010-04-28 2010-04-28 Optical package and manufacturing method of the same
KR1020100046346A KR101158497B1 (en) 2010-05-18 2010-05-18 Tape type light package and manufacturing method of the same
KR10-2010-0046346 2010-05-18

Publications (2)

Publication Number Publication Date
WO2011136470A2 true WO2011136470A2 (en) 2011-11-03
WO2011136470A3 WO2011136470A3 (en) 2011-12-22

Family

ID=44861993

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001461 WO2011136470A2 (en) 2010-04-28 2011-03-03 Optical package and manufacturing method thereof

Country Status (2)

Country Link
TW (1) TWI542031B (en)
WO (1) WO2011136470A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041290A (en) * 2006-08-02 2008-02-21 Akita Denshi Systems:Kk Lighting device and manufacturing method therefor
KR100853963B1 (en) * 2007-04-12 2008-08-25 주식회사 이츠웰 Very high current smd led lamp using pcb
US20080224161A1 (en) * 2007-03-13 2008-09-18 Sharp Kabushiki Kaisha Semiconductor Light Emitting Device and Multiple Lead Frame for Semiconductor Light Emitting Device
KR20100037471A (en) * 2008-10-01 2010-04-09 한국광기술원 Light emitted diode package including closed aperture and its manufacture method
KR20100102893A (en) * 2009-03-12 2010-09-27 삼성전기주식회사 Light emitting diode package and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041290A (en) * 2006-08-02 2008-02-21 Akita Denshi Systems:Kk Lighting device and manufacturing method therefor
US20080224161A1 (en) * 2007-03-13 2008-09-18 Sharp Kabushiki Kaisha Semiconductor Light Emitting Device and Multiple Lead Frame for Semiconductor Light Emitting Device
KR100853963B1 (en) * 2007-04-12 2008-08-25 주식회사 이츠웰 Very high current smd led lamp using pcb
KR20100037471A (en) * 2008-10-01 2010-04-09 한국광기술원 Light emitted diode package including closed aperture and its manufacture method
KR20100102893A (en) * 2009-03-12 2010-09-27 삼성전기주식회사 Light emitting diode package and method of manufacturing the same

Also Published As

Publication number Publication date
WO2011136470A3 (en) 2011-12-22
TW201138147A (en) 2011-11-01
TWI542031B (en) 2016-07-11

Similar Documents

Publication Publication Date Title
WO2013015551A2 (en) Semiconductor light-emitting unit connected body
US8304798B2 (en) Light-emitting diode module and manufacturing method thereof
JP2005223216A (en) Light emitting light source, illuminator, and display unit
WO2012050333A2 (en) Radiant heat circuit board, method of manufacturing the same, heat generating device package having the same, and backlight
WO2010074371A1 (en) Chip-on-board led package and manufacturing method thereof
WO2013009082A2 (en) Substrate for optical device
KR101051488B1 (en) Method for manufacturing light emitting diode unit, and light emitting diode unit manufactured by this method
EP2472616B1 (en) Light-emitting device package and method of manufacturing the same
WO2011136446A1 (en) Optical package and method of manufacturing the same
JP2009290167A (en) Light emitting module
US20210288106A1 (en) Light-emitting device
WO2010137841A2 (en) Light-emitting diode package and backlight unit
KR101051690B1 (en) Optical package and manufacturing method of the same
KR20120014416A (en) Light emitting device and lighing system
WO2019135421A1 (en) Vehicle lamp using semiconductor light-emitting device
US10168038B1 (en) Solid state lighting (SSL) apparatus having electrically conductive sheets coupled to solid state lighting on an SSL element carrier
WO2017150913A1 (en) Semiconductor light emitting element and manufacturing method therefor
WO2011136470A2 (en) Optical package and manufacturing method thereof
WO2011019145A2 (en) Light-emitting diode package substrate and method for manufacturing same employing a mask to form a metal coating on a reflective side surface of the light-emitting diode package substrate
KR101129002B1 (en) Optical package and manufacturing method of the same
KR20120014417A (en) Light emitting device and lighing system
WO2018030680A1 (en) Semiconductor light-emitting device
WO2021241998A1 (en) Method for manufacturing semiconductor light emitting device
KR101146656B1 (en) Optical package and manufacturing method of the same
KR101146659B1 (en) Optical package and manufacturing method of the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11775176

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11775176

Country of ref document: EP

Kind code of ref document: A2