WO2010074371A1 - Chip-on-board led package and manufacturing method thereof - Google Patents

Chip-on-board led package and manufacturing method thereof Download PDF

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Publication number
WO2010074371A1
WO2010074371A1 PCT/KR2009/002382 KR2009002382W WO2010074371A1 WO 2010074371 A1 WO2010074371 A1 WO 2010074371A1 KR 2009002382 W KR2009002382 W KR 2009002382W WO 2010074371 A1 WO2010074371 A1 WO 2010074371A1
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Prior art keywords
chip
lead electrode
heat dissipating
insulator
heat dissipation
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PCT/KR2009/002382
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French (fr)
Korean (ko)
Inventor
김한도
윤정현
김천수
Original Assignee
루미마이크로 주식회사
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Publication of WO2010074371A1 publication Critical patent/WO2010074371A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89Metals
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a chip-on-board type light emitting diode (LED) package and a method of manufacturing the same.
  • a light emitting diode basically consists of a junction between a p-type and an n-type semiconductor, and when voltage is applied, electrons and holes are combined to provide energy corresponding to the bandgap of the semiconductor. It is a kind of photoelectronic device that emits in form.
  • Such LEDs include high-brightness light sources for flashlights, back light for liquid crystal displays (LCDs) used in portable electronic products (mobile phones, camcorders, digital cameras, and PDAs), light sources for billboards, light and switch light sources, and indicators.
  • LCDs liquid crystal displays
  • PDAs portable electronic products
  • light sources for billboards light and switch light sources
  • indicators As a light source for traffic lights, the range of use is expanding day by day.
  • LEDs have been developed in the form of Surface Mount Device (SMD) mounted using Surface Mount Technology (SMT) according to the trend of miniaturization and slimming of information and communication devices.
  • SMD Surface Mount Device
  • SMT Surface Mount Technology
  • FIG. 1 is a perspective view illustrating a PCB package in which a plurality of PCB substrates are stacked and fabricated by arranging a plurality of LEDs on a PCB substrate.
  • FIG. 2 is a cross-sectional view illustrating one LED manufactured using the PCB package.
  • a PCB package is formed by stacking a PCB 10 and a reflector 20 in a multi-layered structure.
  • a plurality of through holes may be formed to form a terminal pattern and flow terminals and currents. And an SMT slot on the side.
  • a chip 31 is mounted on the PCB 10 inside the pad part and a bonding process for connecting the wires 33 is performed.
  • the molding material 35 made of epoxy and phosphor on the chip 31 and the wire 33, one LED package is completed.
  • LED manufacturing technology using a PCB package there is an advantage that it is easy to form the terminal portion, the implementation of a multi-package, easy to realize the miniaturization and light weight by using a PCB.
  • COB chip on board
  • FIG. 3 is a cross-sectional configuration diagram showing a conventional COB package, wherein the COB package includes a metal pad 42 formed of a material such as copper on a resin-based insulating layer 41 to form a lead electrode or the like.
  • a chip 43 is mounted on the metal pad 42 positioned at the center portion.
  • Reference numeral 44 denotes a die adhesive for attaching the chip 43 to the metal pad 42.
  • the chip 43 is electrically connected to the metal pad 42 constituting the lead electrode through a bonding wire 45, and a phosphor 46 and a COB mold 47 are sequentially applied on the chip 43.
  • the COB package is applied by doping the phosphor 46 on top of the chip 43, then applying the COB mold 47 thereon, and then curing the chip 43 and the bonding wire 45. To protect.
  • the conventional COB package type LEDs as described above also have a limitation in improving heat dissipation performance because they do not have a heat dissipation structure capable of sufficiently dissipating heat generated from a chip to the outside, thereby realizing high brightness LEDs. There is a problem that is difficult to do.
  • the present invention has been made to solve the above problems, chip-on-board type light emitting diode package to implement a high-brightness LED by improving the heat dissipation performance by mounting the chip directly on top of the metal heat dissipation plate excellent in heat dissipation performance And a method for producing the same.
  • the present invention by insulating the lead electrode and the metal heat dissipation plate connected to the chip at the same time to configure a heat dissipation insulator to enable heat radiation to the top to further improve the heat dissipation performance chip to enable the implementation of a stable and excellent LED package
  • An object of the present invention is to provide an onboard light emitting diode package and a method of manufacturing the same.
  • the present invention by installing an upper metal plate on top of the heat dissipating insulator to enable heat dissipation to the upper and lower parts of the package to ensure a higher heat dissipation performance, the LED has a long life and excellent light emission characteristics It is an object of the present invention to provide a chip-on-board type light emitting diode package and a method of manufacturing the same.
  • the metal heat dissipation plate A chip mounted on the metal heat dissipation plate; A phosphor coated on the chip; It is provided on the upper portion of the metal heat dissipation plate, it characterized in that it comprises a heat dissipating insulator made to pass through the lead electrode electrically connected to the chip.
  • an upper heat sink is further provided on the heat dissipating insulator.
  • the upper heat sink may be made of a metal plate using any one material of Al, Cu, Cu alloy.
  • the metal heat dissipation plate is also preferably made of any one of Al, Cu, Cu alloy.
  • a molding layer is further applied on the phosphor layer, and the molding layer is preferably applied to cover a part of the heat dissipating insulator as well.
  • the heat dissipating insulator preferably has a structure in which a stage is formed in which the lead electrode is exposed so that a bonding wire connected to the chip can be easily connected.
  • the heat dissipating insulator is preferably made of polyether ether ketone (PEEK) resin material.
  • the heat dissipating insulator may have a hole formed therein to have a structure in which the lead electrode is inserted, or may be manufactured by an insert injection method included in the lead electrode.
  • the method for manufacturing a chip-on-board LED package according to the present invention for solving the above problems, the first step of mounting the chip on the upper portion of the metal heat dissipation plate; A second step of installing a heat dissipating insulator through which a lead electrode passes at a position spaced apart from the chip after the first step; A third step of connecting the chip and the lead electrode with a bonding wire after the second step; A fourth step of forming a phosphor layer by applying a phosphor on the chip after the third step; A fifth step of forming a molding layer on the phosphor layer; And a sixth step of additionally installing an upper heat dissipation plate made of a metal on the heat dissipating insulator.
  • the heat dissipating insulator is formed of a PEEK material, the hole penetrating the center portion is formed by inserting the lead electrode, or the lead electrode can be used that is fixed by the insert injection method.
  • the molding layer is preferably covered to cover a part of the heat dissipating insulator, so that the lead electrode is not exposed to the outside.
  • the chip-on-board light emitting diode package and the method of manufacturing the same according to the present invention have the following effects.
  • the chip is directly mounted on the upper portion of the metal heat dissipation plate having excellent heat dissipation performance, the heat dissipation performance is improved, and the LED can be realized with high brightness.
  • the heat dissipating insulator is installed on the upper portion of the metal heat dissipation plate, the heat dissipation can be insulated from the metal heat dissipation plate and the lead electrode, and the heat can be transferred to the upper side. There is also an effect that can be implemented.
  • the present invention is configured by installing an upper metal plate on top of the heat dissipating insulator, the heat dissipation area can be expanded not only to the lower part of the LED package but also to the upper part, thereby ensuring higher heat dissipation performance and thus lifespan. There is an effect that it is possible to implement LED having a long and excellent light emission characteristics.
  • the lead electrode is configured to be exposed from the heat dissipating insulator to facilitate the connection work with the bonding wire
  • the molding layer is configured to cover the lead electrode, thereby simplifying the assembly process and It also provides the effect of enabling more stable package implementation while reducing costs.
  • FIG. 1 is an exploded perspective view showing a PCB package for manufacturing a conventional LED
  • COB chip-on-board
  • FIG. 4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention
  • FIG. 5 is a diagram illustrating a method of manufacturing a chip-on-board (COB) type LED package according to the present invention in order.
  • COB chip-on-board
  • FIG. 4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention, illustrating a case where two LEDs are configured together.
  • COB chip-on-board
  • the chip-on-board LED package includes a metal heat dissipation plate 50, a chip 55 mounted on the metal heat dissipation plate 50, and a coating on the chip 55.
  • the lead electrode 65 is connected to and electrically connected to an external circuit at the same time, and an upper heat dissipation plate 95 provided on the heat dissipating insulator 90.
  • the metal heat dissipation plate 50 is preferably composed of a metal plate of Al (Aluminum) material having a thickness of approximately 1 mm.
  • the reason why the metal of Al material is used as the metal heat dissipation plate 50 is to quickly transfer heat generated from the chip 55 to the outside under the condition that the chip 55 is directly mounted on the top to promote heat dissipation. For that.
  • the metal heat dissipation plate 50 is not necessarily limited to an Al material, and may be configured using Cu, a Cu alloy, a SUS material, or the like having a high heat dissipation performance of a certain level or more.
  • the chip 55 is configured using a chip 55 made of a semiconductor device that is typically installed to implement the LED.
  • Reference numeral 57 in FIG. 4 denotes a die adhesive for attaching the chip 55 to the metal heat dissipation plate 50.
  • the phosphor 70 is configured to emit a specific color such as RGB while the light emitted from the chip 55 is transmitted.
  • the phosphor 70 absorbs a part of the blue light so as to implement a white LED, yellow, pink or
  • the color temperature may be controlled within a wide range using an inorganic fluorescent material or an organic fluorescent material which is a fluorescent material capable of emitting red light.
  • a molding layer 80 is further applied to protect the chip 55 and the phosphor 70 layer as shown in the drawing.
  • the molding layer 80 may be manufactured and applied to a silicon material.
  • the molding layer 80 is preferably coated to be configured to implement a stable package state while covering up to a portion of the upper heat sink (95).
  • the heat dissipating insulator 90 insulates the lead electrode 65 between the metal heat dissipation plate 50 and the upper heat dissipation plate 95, and heats the heat generated from the metal heat dissipation plate 50. 95) to facilitate delivery.
  • the heat dissipating insulator 90 is preferably made of PEEK (PolyEtherEtherKetone) resin.
  • PEEK resin is a kind of engineering plastic and is a commercialized plastic material having high heat resistance. When PEEK resin is mixed with nano ceramic particles, the PEEK resin may have higher thermal conductivity.
  • the lead electrode 65 passes through the inside of the heat dissipating insulator 90. Two examples of the method of configuring the lead electrode 65 to pass through the heat dissipating insulator 90 will be described.
  • One is a method of forming a hole inside the heat dissipating insulator 90 and inserting the lead electrode 65 into the hole, and the other is a lead electrode (when forming the heat dissipating insulator 90).
  • 65 is a method of injection molding by insert injection.
  • the heat dissipating insulator 90 may be divided into a plurality of layers and stacked in accordance with the exemplary embodiment.
  • the lead electrode 65 may be inserted between the plurality of layers.
  • the heat dissipating insulator 90 is configured such that at least one end of the lead electrode 65 passing therein is exposed to the outside, which connects the chip 55 and the lead electrode 65 to the bonding wire 60. In this case, the bonding wire 60 is easily connected to the lead electrode 65.
  • a structure in which the upper portion of the portion adjacent to the phosphor 70 layer in the heat dissipating insulator 90 is deleted, that is, the step S may be formed.
  • the molding layer 80 is coated and positioned thereon, thereby maintaining a stable fixed state.
  • the lead electrode 65 is connected to the chip 55 through a bonding wire 60, and the other side is electrically connected to an external circuit such as a substrate on which the LED package of the present invention is mounted. It is configured to connect, and may be made of an alloy such as Cu, Ni, Ag, etc., made of a long linear structure is configured to pass through the heat dissipating insulator 90.
  • the upper heat dissipation plate 95 is installed to receive heat generated while the chip 55 is driven from the heat dissipating insulator 90 through the heat dissipating insulator 90 and to be discharged to the outside. It is preferable to be composed of the same metal material as the metal heat dissipation plate 50, but is not necessarily limited thereto, and a metal material having excellent heat dissipation performance may be selected and applied as necessary.
  • the upper heat sink 95 may be composed of a plate-like structure made of Al material, such as the metal heat dissipation plate 50, in which the thickness may be configured to be about 0.2mm.
  • the upper heat sink 95 can be configured using other metals having good heat dissipation performance, such as Cu and Cu alloys, in addition to the Al material.
  • COB chip on board
  • FIG. 5 is a flowchart illustrating a method of manufacturing a chip on board (COB) type LED package according to the present invention.
  • COB chip on board
  • COB chip on board
  • the chip 55 is mounted on the metal heat dissipation plate 50. At this time, the chip 55 is attached to the metal heat dissipation plate 50 by the die adhesive 57 is installed.
  • a heat dissipating insulator 90 including a lead electrode 65 is installed at a position spaced apart from the chip 55 at an upper portion of the metal heat dissipation plate 50. do.
  • the heat dissipating insulator 90 is formed of PEEK resin, and a structure in which the lead electrode 65 is inserted therein or a method manufactured by insert injection method is used.
  • a structure in which the lead electrode 65 is inserted it is also possible to install the heat dissipation insulator 90 on the metal heat dissipation plate 50 and then insert the lead electrode 65 in such a manner.
  • the bonding wire 60 is connected to the lead electrode 65 exposed from the chip 55 and the heat dissipating insulator 90 to thereby form the chip 55 and the lead electrode 65. Is electrically connected.
  • the phosphor 70 is coated to cover the chip 55 and the bonding wire 60.
  • the phosphor 70 is coated by a method such as dotting the upper portion of the metal heat dissipation plate 50 in the inner region of the heat dissipation insulator 90 located around or on both sides of one chip 55.
  • the molding layer 80 is formed on the phosphor 70 so as to cover a part of the phosphor 70 and the heat dissipating insulator 90.
  • the molding layer 80 protects the chip 55, the bonding wire 60, and the phosphor 70, and also covers a part of the heat dissipating insulator 90, so that the heat dissipating insulator 90 heats the metal.
  • the molding layer 80 protects the chip 55, the bonding wire 60, and the phosphor 70, and also covers a part of the heat dissipating insulator 90, so that the heat dissipating insulator 90 heats the metal.
  • it also serves to protect the lead electrode 65 from being exposed to the outside.
  • an upper heat sink 95 made of a metal material is further installed on the heat dissipating insulator 90.
  • the upper heat dissipation plate 95 is preferably installed to be in close contact with the heat dissipating insulator 90 by using an adhesive having a thermal conductivity so that heat transfer can be made smoothly.
  • the method of installing the heat dissipating insulator 90 first and applying the phosphor 70 later is illustrated.
  • the phosphor 70 may be applied first and the heat dissipating insulator 90 may be installed later.
  • the bonding wire 60 is connected to the chip 55 before the phosphor 70 is coated, and after the phosphor 70 is coated, the other end of the bonding wire 60 is connected to the heat dissipating insulator 90. Proceed to how.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a chip-on-board LED package that comprises: a metallic heatsink plate; a chip mounted on the metallic heatsink plate; phosphors applied on the chip; and a heatsink insulator provided on the metallic heatsink plate, and including a lead electrode therein that is electrically connected to the chip and passes through the heatsink insulator. Therefore, the chip-on-board LED package has improved heatsink performance, thereby realizing a high-luminance LED.

Description

칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법Chip on board LED package and manufacturing method thereof
본 발명은 칩온보드(Chip on Board) 타입의 발광 다이오드(LED; Light- Emitting Diode) 패키지 및 그것의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip-on-board type light emitting diode (LED) package and a method of manufacturing the same.
일반적으로 발광 다이오드(이하 'LED'라 한다)는 기본적으로 p형과 n형 반도체의 접합으로 이루어져 있으며, 전압을 가하면 전자와 정공의 결합으로 반도체의 밴드갭(bandgap)에 해당하는 에너지를 빛의 형태로 방출하는 일종의 광전자 소자(photoelectronic device)이다.In general, a light emitting diode (hereinafter referred to as 'LED') basically consists of a junction between a p-type and an n-type semiconductor, and when voltage is applied, electrons and holes are combined to provide energy corresponding to the bandgap of the semiconductor. It is a kind of photoelectronic device that emits in form.
이와 같은 LED는 후레쉬용 고휘도 광원, 휴대용 전자제품(휴대폰, 캠코더, 디지털 카메라 및 PDA)에 사용되는 액정 디스플레이(LCD)의 후 광원(back light), 전광판용 광원, 조명 및 스위치 조명 광원, 표시등, 교통신호등의 광원으로 그 사용 범위가 날로 확대되고 있다.Such LEDs include high-brightness light sources for flashlights, back light for liquid crystal displays (LCDs) used in portable electronic products (mobile phones, camcorders, digital cameras, and PDAs), light sources for billboards, light and switch light sources, and indicators. As a light source for traffic lights, the range of use is expanding day by day.
이러한 LED는 정보 통신 기기의 소형화와 슬림화 등의 추세에 따라 표면 실장 기술(Surface Mount Technology ; SMT)을 이용하여 실장되는 표면 실장 소자(Surface Mount Device ; SMD)형으로 개발되었다.Such LEDs have been developed in the form of Surface Mount Device (SMD) mounted using Surface Mount Technology (SMT) according to the trend of miniaturization and slimming of information and communication devices.
도 1은 PCB 기판 여러 장을 적층하여 PCB 기판 상에 다수의 LED를 배열하여 제작하는 PCB 패키지가 도시된 사시도이고, 도 2는 이러한 PCB 패키지를 이용하여 제작된 하나의 LED를 보여주는 단면도이다.FIG. 1 is a perspective view illustrating a PCB package in which a plurality of PCB substrates are stacked and fabricated by arranging a plurality of LEDs on a PCB substrate. FIG. 2 is a cross-sectional view illustrating one LED manufactured using the PCB package.
도 1을 참조하면, PCB 패키지는 PCB(10)와 리플렉터(20)가 다층 구조로 적층되어 구성되는데, PCB(10)에는 단자 패턴을 형성하는 동시에 단자와 전류가 흐를 수 있도록 다수의 스루 홀을 형성하고, 측면에 SMT 슬롯(slot)을 형성한다. 그리고, 리플렉터(20)에는 패드부 안쪽에, 도 2에 도시된 바와 같이, PCB(10) 상에 칩(chip)(31)을 실장하고, 와이어(33)를 연결하는 본딩 공정을 실시한 후에, 칩(31)과 와이어(33)의 상부에 에폭시와 형광체로 이루어진 몰딩 소재(35)를 도포하고 경화시킴으로써 하나의 LED 패키지가 완성되는 구성으로 이루어진다.Referring to FIG. 1, a PCB package is formed by stacking a PCB 10 and a reflector 20 in a multi-layered structure. In the PCB 10, a plurality of through holes may be formed to form a terminal pattern and flow terminals and currents. And an SMT slot on the side. In the reflector 20, a chip 31 is mounted on the PCB 10 inside the pad part and a bonding process for connecting the wires 33 is performed. By coating and curing the molding material 35 made of epoxy and phosphor on the chip 31 and the wire 33, one LED package is completed.
PCB 패키지를 이용한 LED 제조 기술은, PCB를 이용하므로 단자부의 형성이 용이하고, 멀티(multi) 패키지의 구현이 간편하고, 이에 따라 소형화와 경량화를 실현할 수 있는 장점이 있다.LED manufacturing technology using a PCB package, there is an advantage that it is easy to form the terminal portion, the implementation of a multi-package, easy to realize the miniaturization and light weight by using a PCB.
하지만, 형광체 사용량이 많고, 또한 리플렉터(20)가 추가로 구성되므로 제조비용이 많이 소요되고, 리플렉터(20)를 사용하게 되므로 광 효율이 떨어지는 단점이 있다. However, since the amount of the phosphor used is large, and the reflector 20 is further configured, manufacturing cost is increased, and the reflector 20 is used, so that light efficiency is lowered.
이러한 단점을 해결하기 위해, 칩온보드(Chip on Board; COB) 타입의 LED 패키지가 개발되었는바, 이러한 구조에 대하여 간단히 살펴본다.In order to solve this disadvantage, a chip on board (COB) type LED package has been developed, a brief look at such a structure.
도 3은 종래 COB 패키지가 도시된 단면 구성도로서, COB 패키지는, 수지(resin) 계열의 절연층(41)에 구리 등의 재질로 이루어져 리드 전극 등을 구성하는 금속 패드(42)가 구성되고, 중앙부에 위치되는 금속 패드(42)에는 칩(chip)(43)이 실장된다. 참조 번호 44는 상기 칩(43)을 금속 패드(42)에 부착하는 다이 접착제를 나타낸다. FIG. 3 is a cross-sectional configuration diagram showing a conventional COB package, wherein the COB package includes a metal pad 42 formed of a material such as copper on a resin-based insulating layer 41 to form a lead electrode or the like. A chip 43 is mounted on the metal pad 42 positioned at the center portion. Reference numeral 44 denotes a die adhesive for attaching the chip 43 to the metal pad 42.
상기 칩(43)은 본딩 와이어(45)를 통해 상기 리드 전극을 구성하는 금속 패드(42)에 전기적으로 연결되며, 상부에는 형광체(46)와 COB 몰드(47)가 차례로 도포되어 구성된다.The chip 43 is electrically connected to the metal pad 42 constituting the lead electrode through a bonding wire 45, and a phosphor 46 and a COB mold 47 are sequentially applied on the chip 43.
COB 패키지는 칩(43)의 상부에 형광체(46)를 도팅(dotting)하는 방식으로 도포한 후에, 그 위에 COB 몰드(47)를 도포한 다음, 경화하여 칩(43)과 본딩 와이어(45)를 보호한다.The COB package is applied by doping the phosphor 46 on top of the chip 43, then applying the COB mold 47 thereon, and then curing the chip 43 and the bonding wire 45. To protect.
이와 같이 구성되는 종래 COB 패키지는, 디스펜싱 공정을 적용하여 소량의 형광체(46)를 사용할 수 있게 됨에 따라 제조비용을 절감할 수 있고, 도 1에서와 같은 리플렉터(20)가 사라지면서 CCT(Correlated Color Temperature) 편차 감소 및 광효율이 상승되는 장점을 갖는다.In the conventional COB package configured as described above, a small amount of the phosphor 46 can be used by applying a dispensing process, thereby reducing manufacturing cost, and the reflector 20 disappears as shown in FIG. 1. Color Temperature) It has the advantage of reducing the deviation and increasing the light efficiency.
그러나, 상기와 같은 종래 COB 패키지 타입의 LED도, 칩에서 발생되는 열을 외부로 충분히 방열시킬 수 있는 방열 구조가 확보되어 있지 않기 때문에 방열 성능을 높이는데 한계가 있고, 이에 따라 고휘도의 LED를 구현하기 어려운 문제점이 있다.However, the conventional COB package type LEDs as described above also have a limitation in improving heat dissipation performance because they do not have a heat dissipation structure capable of sufficiently dissipating heat generated from a chip to the outside, thereby realizing high brightness LEDs. There is a problem that is difficult to do.
특히, LED 패키지를 LCD의 백라이트 등의 용도로 사용하는 경우에 광원인 칩(Chip)의 온도를 낮게 유지하기 위한 방열 특성과 높은 휘도의 구현이 중요한 문제로 대두되는데, 상기와 같이 방열 구조가 충분히 확보되지 않은 경우에 LCD 백라이트 용도 등으로 보다 효과적으로 적용하기 어려운 문제가 발생된다.In particular, when the LED package is used for a backlight of an LCD, a heat dissipation characteristic and high luminance to maintain a low temperature of the chip, which is a light source, are an important problem. If it is not secured, it is difficult to apply the LCD backlight effectively.
본 발명은 상기한 문제점을 해결하기 위하여 안출된 것으로서, 칩을 방열 성능이 우수한 금속 방열 플레이트의 상부에 직접 실장하여 구성함으로써 방열 성능을 개선하여 고휘도의 LED 구현이 가능해지도록 하는 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법을 제공하는 데 목적이 있다.The present invention has been made to solve the above problems, chip-on-board type light emitting diode package to implement a high-brightness LED by improving the heat dissipation performance by mounting the chip directly on top of the metal heat dissipation plate excellent in heat dissipation performance And a method for producing the same.
또한, 본 발명은, 칩과 연결되는 리드 전극과 금속 방열 플레이트를 절연시킴과 동시에 상부로 방열이 가능하도록 방열성 절연체를 구성함으로써 방열 성능을 더욱 향상시키면서 안정되고 우수한 LED 패키지의 구현이 가능하도록 하는 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법을 제공하는 데 목적이 있다.In addition, the present invention, by insulating the lead electrode and the metal heat dissipation plate connected to the chip at the same time to configure a heat dissipation insulator to enable heat radiation to the top to further improve the heat dissipation performance chip to enable the implementation of a stable and excellent LED package An object of the present invention is to provide an onboard light emitting diode package and a method of manufacturing the same.
또한, 본 발명은, 방열성 절연체의 상부에 추가로 상부 금속판을 설치하여 구성함으로써 패키지의 하부는 물론 상부까지 방열이 가능하도록 하여 보다 높은 방열 성능을 확보하여, 수명이 길고 우수한 발광 특성을 갖는 LED 구현이 가능해지도록 하는 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법을 제공하는 데 목적이 있다.In addition, the present invention, by installing an upper metal plate on top of the heat dissipating insulator to enable heat dissipation to the upper and lower parts of the package to ensure a higher heat dissipation performance, the LED has a long life and excellent light emission characteristics It is an object of the present invention to provide a chip-on-board type light emitting diode package and a method of manufacturing the same.
상기한 바와 같은 기술적 과제를 해결하기 위한, 본 발명에 따른 칩온보드형 발광 다이오드 패키지는, 금속 방열 플레이트와; 상기 금속 방열 플레이트 상에 실장된 칩과; 상기 칩 위에 도포된 형광체와; 상기 금속 방열 플레이트의 상부에 구비되고, 그 내부에 상기 칩과 전기적으로 연결되는 리드 전극이 통과하도록 이루어진 방열성 절연체를 포함한 것을 특징으로 한다.In order to solve the above technical problem, the chip-on-board LED package according to the present invention, the metal heat dissipation plate; A chip mounted on the metal heat dissipation plate; A phosphor coated on the chip; It is provided on the upper portion of the metal heat dissipation plate, it characterized in that it comprises a heat dissipating insulator made to pass through the lead electrode electrically connected to the chip.
상기 방열성 절연체의 상부에는 상부 방열판이 추가로 구비되는 것이 바람직하다. 이때 상기 상부 방열판은 Al, Cu, Cu합금 중 어느 하나의 소재를 이용한 금속 판재로 이루어질 수 있다.It is preferable that an upper heat sink is further provided on the heat dissipating insulator. At this time, the upper heat sink may be made of a metal plate using any one material of Al, Cu, Cu alloy.
또한 상기 금속 방열 플레이트도 Al, Cu, Cu합금 중 어느 하나의 소재로 이루어지는 것이 바람직하다.In addition, the metal heat dissipation plate is also preferably made of any one of Al, Cu, Cu alloy.
상기 형광체 층 위에 몰딩층이 추가로 도포되고, 이 몰딩층은 상기 방열성 절연체의 일부도 함께 덮을 수 있도록 도포되는 것이 바람직하다.A molding layer is further applied on the phosphor layer, and the molding layer is preferably applied to cover a part of the heat dissipating insulator as well.
상기 방열성 절연체는 상기 칩과 연결되는 본딩 와이어가 용이하게 연결될 수 있도록 상기 리드 전극이 노출되게 삭제된 모양의 단(段)이 형성된 구조로 이루어지는 것이 바람직하다.The heat dissipating insulator preferably has a structure in which a stage is formed in which the lead electrode is exposed so that a bonding wire connected to the chip can be easily connected.
상기 방열성 절연체는 PEEK(PolyEtherEtherKetone) 수지 소재로 구성되는 것이 바람직하다.The heat dissipating insulator is preferably made of polyether ether ketone (PEEK) resin material.
상기 방열성 절연체는 그 내부에 홀이 형성되어 상기 리드 전극이 삽입되는 구조로 이루어지거나, 리드 전극이 포함하는 인서트 사출 방식으로 제작되어 구성될 수 있다.The heat dissipating insulator may have a hole formed therein to have a structure in which the lead electrode is inserted, or may be manufactured by an insert injection method included in the lead electrode.
다음, 상기한 과제를 해결하기 위한 본 발명에 따른 칩온보드형 발광 다이오드 패키지 제조 방법은, 금속 방열 플레이트의 상부에 칩을 실장하는 제1단계와; 제1단계 후에, 금속 방열 플레이트의 상부에서, 상기 칩과 일정 거리 이격된 위치에 리드 전극이 통과하는 방열성 절연체를 설치하는 제2단계와; 제2단계 후에, 상기 칩과 리드 전극 사이를 본딩 와이어로 연결하는 제3단계와; 제3단계 후에, 상기 칩의 상부에 형광체를 도포하여 형광체 층을 형성하는 제4단계와; 상기 형광체 층 위에 몰딩층을 형성하는 제5단계와; 상기 방열성 절연체의 상부에 금속재로 이루어진 상부 방열판을 추가로 설치하는 제6단계를 포함한 것을 특징으로 한다.Next, the method for manufacturing a chip-on-board LED package according to the present invention for solving the above problems, the first step of mounting the chip on the upper portion of the metal heat dissipation plate; A second step of installing a heat dissipating insulator through which a lead electrode passes at a position spaced apart from the chip after the first step; A third step of connecting the chip and the lead electrode with a bonding wire after the second step; A fourth step of forming a phosphor layer by applying a phosphor on the chip after the third step; A fifth step of forming a molding layer on the phosphor layer; And a sixth step of additionally installing an upper heat dissipation plate made of a metal on the heat dissipating insulator.
상기 제2단계에서, 상기 방열성 절연체는 PEEK 소재로 형성하고, 중앙부를 관통하는 홀을 형성하여 리드 전극을 삽입하는 방식으로 이루어지거나, 리드 전극이 인서트 사출 방식으로 고정된 것을 이용하는 것을 이용할 수 있다.In the second step, the heat dissipating insulator is formed of a PEEK material, the hole penetrating the center portion is formed by inserting the lead electrode, or the lead electrode can be used that is fixed by the insert injection method.
상기 제5단계에서, 몰딩층은 상기 방열성 절연체의 일부까지 덮어서, 리드 전극이 외부로 노출되지 않도록 도포하는 것이 바람직하다.In the fifth step, the molding layer is preferably covered to cover a part of the heat dissipating insulator, so that the lead electrode is not exposed to the outside.
본 발명에 따른 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법은 다음과 같은 효과를 갖는다.The chip-on-board light emitting diode package and the method of manufacturing the same according to the present invention have the following effects.
본 발명은, 칩을 방열 성능이 우수한 금속 방열 플레이트의 상부에 직접 실장하여 구성하기 때문에 방열 성능이 향상되어 고휘도의 LED 구현이 가능해지는 효과가 있다.According to the present invention, since the chip is directly mounted on the upper portion of the metal heat dissipation plate having excellent heat dissipation performance, the heat dissipation performance is improved, and the LED can be realized with high brightness.
또한, 본 발명은, 금속 방열 플레이트의 상부에 방열성 절연체가 설치되기 때문에 금속 방열 플레이트와 리드 전극을 절연시킬 수 있는 동시에 상부 쪽으로 열전달이 가능하게 되어, 방열 성능을 더욱 향상시키면서 안정되고 우수한 LED 패키지의 구현이 가능해지는 효과도 있다.In addition, since the heat dissipating insulator is installed on the upper portion of the metal heat dissipation plate, the heat dissipation can be insulated from the metal heat dissipation plate and the lead electrode, and the heat can be transferred to the upper side. There is also an effect that can be implemented.
또한, 본 발명은, 방열성 절연체의 상부에 추가로 상부 금속판을 설치하여 구성하기 때문에 LED 패키지의 하부는 물론 상부까지 방열 면적을 확대할 수 있기 때문에 보다 높은 방열 성능을 확보할 수 있고, 이에 따라 수명이 길고 우수한 발광 특성을 갖는 LED 구현이 가능해지는 효과가 있다.In addition, since the present invention is configured by installing an upper metal plate on top of the heat dissipating insulator, the heat dissipation area can be expanded not only to the lower part of the LED package but also to the upper part, thereby ensuring higher heat dissipation performance and thus lifespan. There is an effect that it is possible to implement LED having a long and excellent light emission characteristics.
또한, 본 발명은, 리드 전극을 방열성 절연체에서 노출되도록 구성하여 본딩 와이어와 연결 작업이 용이하게 이루어질 수 있도록 함과 아울러 몰딩층이 리드 전극을 덮을 수 있도록 구성되기 때문에 조립 공정을 단순화를 실현함과 아울러 비용을 절감하면서 보다 안정된 패키지의 구현이 가능하도록 하는 효과를 제공하게 된다.In addition, the present invention, the lead electrode is configured to be exposed from the heat dissipating insulator to facilitate the connection work with the bonding wire, and the molding layer is configured to cover the lead electrode, thereby simplifying the assembly process and It also provides the effect of enabling more stable package implementation while reducing costs.
도 1은 종래 LED 제조를 위한 PCB 패키지가 도시된 분해 사시도,1 is an exploded perspective view showing a PCB package for manufacturing a conventional LED,
도 2는 도 1의 PCB 패키지를 이용한 LED가 도시된 단면도,2 is a cross-sectional view of the LED using the PCB package of Figure 1,
도 3은 종래 칩온보드(COB)형 LED 패키지가 도시된 단면도,3 is a cross-sectional view showing a conventional chip-on-board (COB) type LED package,
도 4는 본 발명에 따른 칩온보드(COB)형 LED 패키지가 도시된 단면도,Figure 4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention,
도 5는 본 발명에 따른 칩온보드(COB)형 LED 패키지의 제작 방법이 순서대로 도시된 도면들이다.5 is a diagram illustrating a method of manufacturing a chip-on-board (COB) type LED package according to the present invention in order.
첨부된 도면을 참조하여 본 발명의 바람직한 실시 예를 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
도 4는 본 발명에 따른 칩온보드(COB)형 LED 패키지가 도시된 단면도로서, 두 개의 LED가 함께 구성된 경우를 예시한 도면이다.4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention, illustrating a case where two LEDs are configured together.
이에 도시된 바와 같이, 본 발명에 따른 칩온보드형 발광 다이오드 패키지는, 금속 방열 플레이트(50)와, 이 금속 방열 플레이트(50) 상에 실장된 칩(55)과, 이 칩(55) 위에 도포된 형광체(70)와, 상기 금속 방열 플레이트(50)의 상부에 구비되는 방열성 절연체(90)와, 이 방열성 절연체(90)의 내부를 통과하도록 이루어져 상기 칩(55)과 본딩 와이어(60)로 연결되는 동시에 외부 회로와도 전기적으로 연결하는 리드 전극(65)과, 상기 방열성 절연체(90)의 상부에 구비되는 상부 방열판(95)으로 구성된다.As shown therein, the chip-on-board LED package according to the present invention includes a metal heat dissipation plate 50, a chip 55 mounted on the metal heat dissipation plate 50, and a coating on the chip 55. The phosphor 70, the heat dissipating insulator 90 provided on the metal heat dissipation plate 50, and the chip 55 and the bonding wire 60 to pass through the inside of the heat dissipating insulator 90. The lead electrode 65 is connected to and electrically connected to an external circuit at the same time, and an upper heat dissipation plate 95 provided on the heat dissipating insulator 90.
이와 같이 구성되는 본 발명의 칩온보드형 발광 다이오드 패키지의 주요 구성 부분을 상세히 설명한다.The main components of the chip-on-board LED package of the present invention configured as described above will be described in detail.
먼저, 상기 금속 방열 플레이트(50)는, 대략 1mm의 두께를 가진 Al(Aluminum) 소재의 금속판으로 구성되는 것이 바람직하다. First, the metal heat dissipation plate 50 is preferably composed of a metal plate of Al (Aluminum) material having a thickness of approximately 1 mm.
금속 방열 플레이트(50)로 Al 소재의 금속을 사용하는 이유는 상부에 칩(55)이 바로 실장되어 부착된 조건에서 칩(55)에서 발생된 열을 외부로 신속하게 전달하여 열방출을 촉진하기 위해서이다.The reason why the metal of Al material is used as the metal heat dissipation plate 50 is to quickly transfer heat generated from the chip 55 to the outside under the condition that the chip 55 is directly mounted on the top to promote heat dissipation. For that.
이러한 금속 방열 플레이트(50)는 반드시 Al 소재에 한정되는 것은 아니고, 일정 이상의 높은 방열 성능을 갖는 Cu, Cu합금, SUS 소재 등을 이용하여 구성하는 것도 가능하다.The metal heat dissipation plate 50 is not necessarily limited to an Al material, and may be configured using Cu, a Cu alloy, a SUS material, or the like having a high heat dissipation performance of a certain level or more.
다음, 상기 칩(55)은, 통상적으로 LED를 구현하기 위해 설치되는 반도체 소자로 이루어진 칩(55)을 사용하여 구성한다. 도 4에서 참조 번호 57은 칩(55)을 상기 금속 방열 플레이트(50)에 부착하는 다이 접착제를 나타낸다.Next, the chip 55 is configured using a chip 55 made of a semiconductor device that is typically installed to implement the LED. Reference numeral 57 in FIG. 4 denotes a die adhesive for attaching the chip 55 to the metal heat dissipation plate 50.
다음, 상기 형광체(70)는, 상기 칩(55)에서 방출된 광이 투과되면서, R.G.B 등 특정 색상을 방출하도록 구성된 것으로서, 최근에는 백색 LED를 구현할 수 있도록 청색광의 일부를 흡수하여 황색, 핑크 또는 붉은색의 발광이 가능한 형광 물질인 무기물계 형광물질 또는 유기물계 형광물질을 이용하여 넓은 범위 내에서 색온도 조절이 가능하도록 구성하는 경우도 있다.Next, the phosphor 70 is configured to emit a specific color such as RGB while the light emitted from the chip 55 is transmitted. In recent years, the phosphor 70 absorbs a part of the blue light so as to implement a white LED, yellow, pink or In some cases, the color temperature may be controlled within a wide range using an inorganic fluorescent material or an organic fluorescent material which is a fluorescent material capable of emitting red light.
이러한 형광체(70) 층 위에는 도면에서와 같이 칩(55) 및 형광체(70) 층을 보호할 수 있도록 몰딩층(80)이 추가로 도포된다. 이때 몰딩층(80)은 실리콘 소재 등으로 제작되어 도포될 수 있다. 특히 몰딩층(80)은 상기 상부 방열판(95)의 일부까지 덮으면서 안정된 패키지 상태를 구현할 수 있도록 도포되어 구성되는 것이 바람직하다.On the phosphor 70 layer, a molding layer 80 is further applied to protect the chip 55 and the phosphor 70 layer as shown in the drawing. In this case, the molding layer 80 may be manufactured and applied to a silicon material. In particular, the molding layer 80 is preferably coated to be configured to implement a stable package state while covering up to a portion of the upper heat sink (95).
다음, 상기 방열성 절연체(90)는 상기 금속 방열 플레이트(50)와 상기 상부 방열판(95) 사이에서 리드 전극(65)을 절연시킴과 아울러 상기 금속 방열 플레이트(50)에서 발생된 열을 상부 방열판(95)에 용이하게 전달할 수 있도록 구성된다.Next, the heat dissipating insulator 90 insulates the lead electrode 65 between the metal heat dissipation plate 50 and the upper heat dissipation plate 95, and heats the heat generated from the metal heat dissipation plate 50. 95) to facilitate delivery.
이러한 기능이 가능하도록 방열성 절연체(90)는 PEEK(PolyEtherEtherKetone) 수지로 구성되는 것이 바람직하다.In order to enable such a function, the heat dissipating insulator 90 is preferably made of PEEK (PolyEtherEtherKetone) resin.
PEEK 수지는 엔지니어링 플라스틱(Engineering plastic)의 일종으로 높은 내열도를 갖는 상용화된 플라스틱 소재로서, 여기에 나노 세라믹 입자를 혼합하게 되면 보다 높은 열전도 성능을 가질 수 있다.PEEK resin is a kind of engineering plastic and is a commercialized plastic material having high heat resistance. When PEEK resin is mixed with nano ceramic particles, the PEEK resin may have higher thermal conductivity.
이와 같은 방열성 절연체(90)의 내부에는 상기 리드 전극(65)이 통과하게 되는데, 방열성 절연체(90) 내에 리드 전극(65)이 통과할 수 있도록 구성하는 방법 중 대표적인 방법으로 두 가지를 설명한다. The lead electrode 65 passes through the inside of the heat dissipating insulator 90. Two examples of the method of configuring the lead electrode 65 to pass through the heat dissipating insulator 90 will be described.
하나는, 방열성 절연체(90)의 내부에 홀을 형성하고, 이 홀에 상기 리드 전극(65)을 삽입하여 구성하는 방법이고, 다른 하나는 상기 방열성 절연체(90)를 성형할 때, 리드 전극(65)이 포함된 상태로 인서트 사출하여 성형하는 방법이다.One is a method of forming a hole inside the heat dissipating insulator 90 and inserting the lead electrode 65 into the hole, and the other is a lead electrode (when forming the heat dissipating insulator 90). 65) is a method of injection molding by insert injection.
이외에도 실시 조건에 따라 방열성 절연체(90)를 복수의 층으로 구분하여 적층하는 방식으로 구성할 수 있는데, 이때 복수의 층 사이에 리드 전극(65)을 삽입하는 구조로 구성할 수도 있다.In addition, the heat dissipating insulator 90 may be divided into a plurality of layers and stacked in accordance with the exemplary embodiment. In this case, the lead electrode 65 may be inserted between the plurality of layers.
또한 방열성 절연체(90)는 그 내부를 통과하는 리드 전극(65)의 적어도 한쪽 끝단부가 외부로 노출되도록 구성되는데, 이는 상기 칩(55)과 상기 리드 전극(65)을 본딩 와이어(60)로 연결할 때, 본딩 와이어(60)를 상기 리드 전극(65)에 용이하게 연결하기 위해서이다. 이를 위해, 상기 방열성 절연체(90)에서 형광체(70) 층에 인접한 부분의 상부가 삭제된 구조 즉, 단(S)이 형성되도록 구성할 수 있다.In addition, the heat dissipating insulator 90 is configured such that at least one end of the lead electrode 65 passing therein is exposed to the outside, which connects the chip 55 and the lead electrode 65 to the bonding wire 60. In this case, the bonding wire 60 is easily connected to the lead electrode 65. To this end, a structure in which the upper portion of the portion adjacent to the phosphor 70 layer in the heat dissipating insulator 90 is deleted, that is, the step S may be formed.
또한 방열성 절연체(90)에 상기와 같은 단(S)이 형성되면, 그 위에 상기 몰딩층(80)이 도포되어 위치하게 됨으로써 안정된 고정 상태를 유지할 수 있게 된다.In addition, when the end S as described above is formed on the heat dissipating insulator 90, the molding layer 80 is coated and positioned thereon, thereby maintaining a stable fixed state.
다음, 상기 리드 전극(65)은, 위에서도 설명한 바와 같이 상기 칩(55)과는 본딩 와이어(60)를 통해 연결되고, 다른 쪽은 본 발명의 LED 패키지가 장착되는 기판 등의 외부 회로와 전기적으로 연결하기 위해 구성되는 것으로, Cu, Ni, Ag 등의 합금으로 제작되어 구성될 수 있고, 긴 선형 구조로 이루어져 상기 방열성 절연체(90) 내부를 통과하도록 구성된다.Next, as described above, the lead electrode 65 is connected to the chip 55 through a bonding wire 60, and the other side is electrically connected to an external circuit such as a substrate on which the LED package of the present invention is mounted. It is configured to connect, and may be made of an alloy such as Cu, Ni, Ag, etc., made of a long linear structure is configured to pass through the heat dissipating insulator 90.
다음, 상기 상부 방열판(95)은, 상기 방열성 절연체(90)의 상부에서 상기 칩(55)이 구동되면서 발생된 열을 상기 방열성 절연체(90)를 통해 전달받아 외부로 방출하기 위해 설치된 것으로서, 상기 금속 방열 플레이트(50)와 동일한 금속 소재로 구성되는 것이 바람직하나, 반드시 이에 한정되지 않고, 방열 성능을 우수한 금속재이면 필요에 따라 다양하게 선택하여 적용할 수 있다.Next, the upper heat dissipation plate 95 is installed to receive heat generated while the chip 55 is driven from the heat dissipating insulator 90 through the heat dissipating insulator 90 and to be discharged to the outside. It is preferable to be composed of the same metal material as the metal heat dissipation plate 50, but is not necessarily limited thereto, and a metal material having excellent heat dissipation performance may be selected and applied as necessary.
이러한 상부 방열판(95)은 상기 금속 방열 플레이트(50)와 같이 Al 소재로 판형 구조로 구성될 수 있으며, 이때 두께는 0.2mm 정도가 되도록 구성할 수 있다.The upper heat sink 95 may be composed of a plate-like structure made of Al material, such as the metal heat dissipation plate 50, in which the thickness may be configured to be about 0.2mm.
또한, 상부 방열판(95)은 Al 소재 이외에 Cu, Cu합금 등 방열 성능이 좋은 다른 금속을 이용하여 구성할 수 있다.In addition, the upper heat sink 95 can be configured using other metals having good heat dissipation performance, such as Cu and Cu alloys, in addition to the Al material.
이제 도 5를 참조하여 상기와 같이 구성되는 본 발명에 따른 칩온보드(COB)형 LED 패키지의 제조 방법에 대하여 설명한다.Now, a method of manufacturing a chip on board (COB) type LED package according to the present invention configured as described above with reference to FIG. 5 will be described.
도 5는 본 발명에 따른 칩온보드(COB)형 LED 패키지의 제조 방법이 도시된 순서도이다.5 is a flowchart illustrating a method of manufacturing a chip on board (COB) type LED package according to the present invention.
본 발명에 따른 칩온보드(COB)형 LED 패키지의 제조 방법은 다음과 같다.The method of manufacturing a chip on board (COB) type LED package according to the present invention is as follows.
먼저, 도 5의 (A)에서와 같이, 금속 방열 플레이트(50)의 상부에 칩(55)을 실장한다. 이때 칩(55)은 다이 접착제(57)에 의해 상기 금속 방열 플레이트(50)에 접착되어 설치된다.First, as shown in FIG. 5A, the chip 55 is mounted on the metal heat dissipation plate 50. At this time, the chip 55 is attached to the metal heat dissipation plate 50 by the die adhesive 57 is installed.
다음, 도 5의 (B)에서와 같이, 상기 금속 방열 플레이트(50)의 상부에서, 상기 칩(55)과 일정 거리 이격된 위치에 리드 전극(65)이 포함된 방열성 절연체(90)를 설치한다. Next, as shown in FIG. 5B, a heat dissipating insulator 90 including a lead electrode 65 is installed at a position spaced apart from the chip 55 at an upper portion of the metal heat dissipation plate 50. do.
이때 방열성 절연체(90)는 PEEK 수지로 형성된 것을 사용하는 것이 바람직하고, 그 내부에 리드 전극(65)이 삽입된 구조 또는 인서트 사출 방식으로 고정된 방법으로 제작된 것을 이용한다. 물론, 리드 전극(65)이 삽입된 구조에서는 금속 방열 플레이트(50)에 방열성 절연체(90)를 설치한 후에, 리드 전극(65)을 삽입하는 방식으로 설치하는 것도 가능하다.At this time, it is preferable that the heat dissipating insulator 90 is formed of PEEK resin, and a structure in which the lead electrode 65 is inserted therein or a method manufactured by insert injection method is used. Of course, in the structure in which the lead electrode 65 is inserted, it is also possible to install the heat dissipation insulator 90 on the metal heat dissipation plate 50 and then insert the lead electrode 65 in such a manner.
다음, 도 5의 (C)에서와 같이, 상기 칩(55)과 방열성 절연체(90)에서 노출된 리드 전극(65)에 본딩 와이어(60)를 연결하여 칩(55)과 리드 전극(65)을 전기적으로 연결한다.Next, as shown in FIG. 5C, the bonding wire 60 is connected to the lead electrode 65 exposed from the chip 55 and the heat dissipating insulator 90 to thereby form the chip 55 and the lead electrode 65. Is electrically connected.
다음, 도 5의 (D)에서와 같이, 상기 칩(55)과 본딩 와이어(60)를 덮을 수 있도록 형광체(70)를 도포한다. 이때 형광체(70)는 하나의 칩(55)을 중심으로 그 둘레 또는 양측에 위치된 상기 방열성 절연체(90)의 안쪽 영역에서 상기 금속 방열 플레이트(50)의 상부에 도팅하는 방법 등으로 도포한다.Next, as shown in FIG. 5D, the phosphor 70 is coated to cover the chip 55 and the bonding wire 60. In this case, the phosphor 70 is coated by a method such as dotting the upper portion of the metal heat dissipation plate 50 in the inner region of the heat dissipation insulator 90 located around or on both sides of one chip 55.
다음, 도 5의 (E)에서와 같이, 상기 형광체(70)의 상부에 형광체(70) 및 방열성 절연체(90)의 일부를 덮을 수 있도록 몰딩층(80)을 형성한다.Next, as shown in FIG. 5E, the molding layer 80 is formed on the phosphor 70 so as to cover a part of the phosphor 70 and the heat dissipating insulator 90.
이때, 몰딩층(80)은 칩(55) 및 본딩 와이어(60), 형광체(70)를 보호함과 아울러, 상기 방열성 절연체(90)의 일부도 함께 덮게 되므로, 방열성 절연체(90)가 금속 방열 플레이트(50)의 상부에 안정되게 고정되게 함과 아울러, 리드 전극(65)이 외부로 노출되지 않도록 하는 보호 기능도 하게 된다.In this case, the molding layer 80 protects the chip 55, the bonding wire 60, and the phosphor 70, and also covers a part of the heat dissipating insulator 90, so that the heat dissipating insulator 90 heats the metal. In addition to being stably fixed to the upper portion of the plate 50, it also serves to protect the lead electrode 65 from being exposed to the outside.
다음, 도 5의 (E)에서와 같이, 상기 방열성 절연체(90)의 상부에 금속재로 이루어진 상부 방열판(95)을 추가로 설치한다. Next, as shown in FIG. 5E, an upper heat sink 95 made of a metal material is further installed on the heat dissipating insulator 90.
이때, 상부 방열판(95)은 열전달이 원활하게 이루어질 수 있도록 열전도성을 갖는 접착제 등을 이용하여 방열성 절연체(90)에 완전히 밀착되도록 설치되는 것이 바람직하다.At this time, the upper heat dissipation plate 95 is preferably installed to be in close contact with the heat dissipating insulator 90 by using an adhesive having a thermal conductivity so that heat transfer can be made smoothly.
한편, 상기에서는 방열성 절연체(90)를 먼저 설치하고 형광체(70)를 나중에 도포하는 방법을 예시하였으나, 반대로 형광체(70)를 먼저 도포하고, 나중에 방열성 절연체(90)를 설치하는 구성도 가능하다. 이때, 본딩 와이어(60)는 형광체(70) 도포 전에 칩(55)에 연결하고, 형광체(70)를 도포한 후에, 상기 본딩 와이어(60)의 다른 쪽 끝단부를 상기 방열성 절연체(90)에 연결하는 방법으로 진행한다.Meanwhile, in the above, the method of installing the heat dissipating insulator 90 first and applying the phosphor 70 later is illustrated. On the contrary, the phosphor 70 may be applied first and the heat dissipating insulator 90 may be installed later. In this case, the bonding wire 60 is connected to the chip 55 before the phosphor 70 is coated, and after the phosphor 70 is coated, the other end of the bonding wire 60 is connected to the heat dissipating insulator 90. Proceed to how.
또한, 상기에서는 몰딩층(80)을 먼저 형성한 후에, 상부 방열판(95)을 설치한 구성에 대하여 설명하였으나, 반대로 상부 방열판(95)을 먼저 설치하고 나중에 몰딩층(80)을 형성하는 것도 가능하다.In addition, in the above description, a configuration in which the upper heat sink 95 is installed after the molding layer 80 is first formed, has been described. On the contrary, the upper heat sink 95 may be installed first and the molding layer 80 may be formed later. Do.
본 발명의 각 실시예에서 설명한 기술적 사상들은 각각 독립적으로 실시될 수 있으며, 서로 조합되어 실시될 수 있다. 또한, 본 발명은 도면 및 발명의 상세한 설명에 기재된 실시예를 통하여 설명되었으나 이는 예시적인 것에 불과하며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다. 따라서, 본 발명의 기술적 보호범위는 첨부된 특허청구범위에 의해 정해져야 할 것이다.The technical idea described in each embodiment of the present invention may be implemented independently, or may be implemented in combination with each other. In addition, the present invention has been described through the embodiments described in the drawings and the detailed description of the invention, which is merely exemplary, and those skilled in the art to which the present invention pertains various modifications and equivalent other embodiments therefrom It is possible. Therefore, the technical protection scope of the present invention will be defined by the appended claims.

Claims (14)

  1. 금속 방열 플레이트와;A metal heat dissipation plate;
    상기 금속 방열 플레이트 상에 실장된 칩과;A chip mounted on the metal heat dissipation plate;
    상기 칩 위에 도포된 형광체와;A phosphor coated on the chip;
    상기 금속 방열 플레이트의 상부에 구비되고, 그 내부에 상기 칩과 전기적으로 연결되는 리드 전극이 통과하도록 이루어진 방열성 절연체를 포함한 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.And a heat dissipation insulator provided on an upper portion of the metal heat dissipation plate and configured to pass a lead electrode electrically connected to the chip therein.
  2. 청구항 1에 있어서,The method according to claim 1,
    상기 방열성 절연체의 상부에는 상부 방열판이 추가로 구비된 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.Chip-on-board LED package, characterized in that the upper heat sink is further provided on the heat insulating insulator.
  3. 청구항 2에 있어서,The method according to claim 2,
    상기 상부 방열판은 Al, Cu, Cu합금 중 어느 하나의 소재를 이용한 금속 판재로 이루어진 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The upper heat sink is a chip-on-board LED package, characterized in that made of a metal plate using any one material of Al, Cu, Cu alloy.
  4. 청구항 1에 있어서,The method according to claim 1,
    상기 금속 방열 플레이트는 Al, Cu, Cu합금 중 어느 하나의 소재로 이루어진 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The metal heat dissipation plate is a chip-on-board LED package, characterized in that made of any one material of Al, Cu, Cu alloy.
  5. 청구항 1에 있어서,The method according to claim 1,
    상기 형광체 층 위에 몰딩층이 추가로 도포된 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.Chip-on-board light emitting diode package, characterized in that the molding layer is further applied on the phosphor layer.
  6. 청구항 5에 있어서,The method according to claim 5,
    상기 몰딩층은 상기 방열성 절연체의 일부도 함께 덮을 수 있도록 도포된 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The molding layer is a chip-on-board type light emitting diode package, characterized in that the coating to cover a portion of the heat dissipating insulator together.
  7. 청구항 1에 있어서,The method according to claim 1,
    상기 방열성 절연체는 상기 칩과 연결되는 본딩 와이어가 용이하게 연결될 수 있도록 상기 리드 전극이 노출되게 삭제된 모양의 단(段)이 형성된 구조로 이루어진 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The heat dissipating insulator is a chip-on-board type light emitting diode package, characterized in that formed of a structure in which a step (삭제) is formed so that the lead electrode is exposed so that the bonding wire connected to the chip can be easily connected.
  8. 청구항 1에 있어서,The method according to claim 1,
    상기 방열성 절연체는 PEEK(PolyEtherEtherKetone) 수지 소재로 구성된 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The heat dissipating insulator is a chip-on-board LED package, characterized in that consisting of PEEK (PolyEtherEeKetone) resin material.
  9. 청구항 1에 있어서,The method according to claim 1,
    상기 방열성 절연체는 그 내부에 홀이 형성되어 상기 리드 전극이 삽입되는 구조로 이루어진 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The heat dissipating insulator is a chip-on-board type light emitting diode package, characterized in that the hole is formed inside the lead electrode is made of a structure that is inserted.
  10. 청구항 1에 있어서,The method according to claim 1,
    상기 방열성 절연체는 리드 전극이 포함하는 인서트 사출 방식으로 제작되어 구성된 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지.The heat dissipating insulator is a chip-on-board type light emitting diode package, characterized in that made by insert injection method comprising a lead electrode.
  11. 금속 방열 플레이트의 상부에 칩을 실장하는 제1단계와;A first step of mounting the chip on top of the metal heat dissipation plate;
    제1단계 후에, 금속 방열 플레이트의 상부에서, 상기 칩과 일정 거리 이격된 위치에 리드 전극이 통과하는 방열성 절연체를 설치하는 제2단계와;A second step of installing a heat dissipating insulator through which a lead electrode passes at a position spaced apart from the chip after the first step;
    제2단계 후에, 상기 칩과 리드 전극 사이를 본딩 와이어로 연결하는 제3단계와;A third step of connecting the chip and the lead electrode with a bonding wire after the second step;
    제3단계 후에, 상기 칩의 상부에 형광체를 도포하여 형광체 층을 형성하는 제4단계와;A fourth step of forming a phosphor layer by applying a phosphor on the chip after the third step;
    상기 형광체 층 위에 몰딩층을 형성하는 제5단계와;A fifth step of forming a molding layer on the phosphor layer;
    상기 방열성 절연체의 상부에 금속재로 이루어진 상부 방열판을 추가로 설치하는 제6단계를 포함한 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지 제조 방법.And a sixth step of additionally installing an upper heat sink made of a metal material on top of the heat dissipating insulator.
  12. 청구항 11에 있어서,The method according to claim 11,
    상기 제2단계에서, 상기 방열성 절연체는 PEEK 소재로 형성하고, 중앙부를 관통하는 홀을 형성하여 리드 전극을 삽입하는 방식으로 이루어지는 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지 제조 방법.In the second step, the heat dissipating insulator is formed of a PEEK material, the chip-on-board type light emitting diode package manufacturing method, characterized in that the hole is formed through the method of inserting the lead electrode.
  13. 청구항 11에 있어서,The method according to claim 11,
    상기 제2단계에서, 상기 방열성 절연체는 PEEK 소재로 형성하고, 리드 전극이 인서트 사출 방식으로 고정된 것을 이용하는 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지 제조 방법.In the second step, the heat dissipating insulator is formed of a PEEK material, and the lead-on board-type LED package manufacturing method, characterized in that the lead electrode is fixed by the insert injection method.
  14. 청구항 11에 있어서,The method according to claim 11,
    상기 제5단계에서, 몰딩층은 상기 방열성 절연체의 일부까지 덮어서, 리드 전극이 외부로 노출되지 않도록 도포하는 것을 특징으로 하는 칩온보드형 발광 다이오드 패키지 제조 방법.In the fifth step, the molding layer is covered with a part of the heat dissipating insulator, the chip-on-board type light emitting diode package manufacturing method, characterized in that the coating so that the lead electrode is not exposed to the outside.
PCT/KR2009/002382 2008-12-26 2009-05-06 Chip-on-board led package and manufacturing method thereof WO2010074371A1 (en)

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