WO2010074371A1 - Ensemble de del à montage direct des puces et son procédé de fabrication - Google Patents

Ensemble de del à montage direct des puces et son procédé de fabrication Download PDF

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Publication number
WO2010074371A1
WO2010074371A1 PCT/KR2009/002382 KR2009002382W WO2010074371A1 WO 2010074371 A1 WO2010074371 A1 WO 2010074371A1 KR 2009002382 W KR2009002382 W KR 2009002382W WO 2010074371 A1 WO2010074371 A1 WO 2010074371A1
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WO
WIPO (PCT)
Prior art keywords
chip
lead electrode
heat dissipating
insulator
heat dissipation
Prior art date
Application number
PCT/KR2009/002382
Other languages
English (en)
Korean (ko)
Inventor
김한도
윤정현
김천수
Original Assignee
루미마이크로 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 루미마이크로 주식회사 filed Critical 루미마이크로 주식회사
Publication of WO2010074371A1 publication Critical patent/WO2010074371A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89—Metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a chip-on-board type light emitting diode (LED) package and a method of manufacturing the same.
  • a light emitting diode basically consists of a junction between a p-type and an n-type semiconductor, and when voltage is applied, electrons and holes are combined to provide energy corresponding to the bandgap of the semiconductor. It is a kind of photoelectronic device that emits in form.
  • Such LEDs include high-brightness light sources for flashlights, back light for liquid crystal displays (LCDs) used in portable electronic products (mobile phones, camcorders, digital cameras, and PDAs), light sources for billboards, light and switch light sources, and indicators.
  • LCDs liquid crystal displays
  • PDAs portable electronic products
  • light sources for billboards light and switch light sources
  • indicators As a light source for traffic lights, the range of use is expanding day by day.
  • LEDs have been developed in the form of Surface Mount Device (SMD) mounted using Surface Mount Technology (SMT) according to the trend of miniaturization and slimming of information and communication devices.
  • SMD Surface Mount Device
  • SMT Surface Mount Technology
  • FIG. 1 is a perspective view illustrating a PCB package in which a plurality of PCB substrates are stacked and fabricated by arranging a plurality of LEDs on a PCB substrate.
  • FIG. 2 is a cross-sectional view illustrating one LED manufactured using the PCB package.
  • a PCB package is formed by stacking a PCB 10 and a reflector 20 in a multi-layered structure.
  • a plurality of through holes may be formed to form a terminal pattern and flow terminals and currents. And an SMT slot on the side.
  • a chip 31 is mounted on the PCB 10 inside the pad part and a bonding process for connecting the wires 33 is performed.
  • the molding material 35 made of epoxy and phosphor on the chip 31 and the wire 33, one LED package is completed.
  • LED manufacturing technology using a PCB package there is an advantage that it is easy to form the terminal portion, the implementation of a multi-package, easy to realize the miniaturization and light weight by using a PCB.
  • COB chip on board
  • FIG. 3 is a cross-sectional configuration diagram showing a conventional COB package, wherein the COB package includes a metal pad 42 formed of a material such as copper on a resin-based insulating layer 41 to form a lead electrode or the like.
  • a chip 43 is mounted on the metal pad 42 positioned at the center portion.
  • Reference numeral 44 denotes a die adhesive for attaching the chip 43 to the metal pad 42.
  • the chip 43 is electrically connected to the metal pad 42 constituting the lead electrode through a bonding wire 45, and a phosphor 46 and a COB mold 47 are sequentially applied on the chip 43.
  • the COB package is applied by doping the phosphor 46 on top of the chip 43, then applying the COB mold 47 thereon, and then curing the chip 43 and the bonding wire 45. To protect.
  • the conventional COB package type LEDs as described above also have a limitation in improving heat dissipation performance because they do not have a heat dissipation structure capable of sufficiently dissipating heat generated from a chip to the outside, thereby realizing high brightness LEDs. There is a problem that is difficult to do.
  • the present invention has been made to solve the above problems, chip-on-board type light emitting diode package to implement a high-brightness LED by improving the heat dissipation performance by mounting the chip directly on top of the metal heat dissipation plate excellent in heat dissipation performance And a method for producing the same.
  • the present invention by insulating the lead electrode and the metal heat dissipation plate connected to the chip at the same time to configure a heat dissipation insulator to enable heat radiation to the top to further improve the heat dissipation performance chip to enable the implementation of a stable and excellent LED package
  • An object of the present invention is to provide an onboard light emitting diode package and a method of manufacturing the same.
  • the present invention by installing an upper metal plate on top of the heat dissipating insulator to enable heat dissipation to the upper and lower parts of the package to ensure a higher heat dissipation performance, the LED has a long life and excellent light emission characteristics It is an object of the present invention to provide a chip-on-board type light emitting diode package and a method of manufacturing the same.
  • the metal heat dissipation plate A chip mounted on the metal heat dissipation plate; A phosphor coated on the chip; It is provided on the upper portion of the metal heat dissipation plate, it characterized in that it comprises a heat dissipating insulator made to pass through the lead electrode electrically connected to the chip.
  • an upper heat sink is further provided on the heat dissipating insulator.
  • the upper heat sink may be made of a metal plate using any one material of Al, Cu, Cu alloy.
  • the metal heat dissipation plate is also preferably made of any one of Al, Cu, Cu alloy.
  • a molding layer is further applied on the phosphor layer, and the molding layer is preferably applied to cover a part of the heat dissipating insulator as well.
  • the heat dissipating insulator preferably has a structure in which a stage is formed in which the lead electrode is exposed so that a bonding wire connected to the chip can be easily connected.
  • the heat dissipating insulator is preferably made of polyether ether ketone (PEEK) resin material.
  • the heat dissipating insulator may have a hole formed therein to have a structure in which the lead electrode is inserted, or may be manufactured by an insert injection method included in the lead electrode.
  • the method for manufacturing a chip-on-board LED package according to the present invention for solving the above problems, the first step of mounting the chip on the upper portion of the metal heat dissipation plate; A second step of installing a heat dissipating insulator through which a lead electrode passes at a position spaced apart from the chip after the first step; A third step of connecting the chip and the lead electrode with a bonding wire after the second step; A fourth step of forming a phosphor layer by applying a phosphor on the chip after the third step; A fifth step of forming a molding layer on the phosphor layer; And a sixth step of additionally installing an upper heat dissipation plate made of a metal on the heat dissipating insulator.
  • the heat dissipating insulator is formed of a PEEK material, the hole penetrating the center portion is formed by inserting the lead electrode, or the lead electrode can be used that is fixed by the insert injection method.
  • the molding layer is preferably covered to cover a part of the heat dissipating insulator, so that the lead electrode is not exposed to the outside.
  • the chip-on-board light emitting diode package and the method of manufacturing the same according to the present invention have the following effects.
  • the chip is directly mounted on the upper portion of the metal heat dissipation plate having excellent heat dissipation performance, the heat dissipation performance is improved, and the LED can be realized with high brightness.
  • the heat dissipating insulator is installed on the upper portion of the metal heat dissipation plate, the heat dissipation can be insulated from the metal heat dissipation plate and the lead electrode, and the heat can be transferred to the upper side. There is also an effect that can be implemented.
  • the present invention is configured by installing an upper metal plate on top of the heat dissipating insulator, the heat dissipation area can be expanded not only to the lower part of the LED package but also to the upper part, thereby ensuring higher heat dissipation performance and thus lifespan. There is an effect that it is possible to implement LED having a long and excellent light emission characteristics.
  • the lead electrode is configured to be exposed from the heat dissipating insulator to facilitate the connection work with the bonding wire
  • the molding layer is configured to cover the lead electrode, thereby simplifying the assembly process and It also provides the effect of enabling more stable package implementation while reducing costs.
  • FIG. 1 is an exploded perspective view showing a PCB package for manufacturing a conventional LED
  • COB chip-on-board
  • FIG. 4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention
  • FIG. 5 is a diagram illustrating a method of manufacturing a chip-on-board (COB) type LED package according to the present invention in order.
  • COB chip-on-board
  • FIG. 4 is a cross-sectional view showing a chip-on-board (COB) type LED package according to the present invention, illustrating a case where two LEDs are configured together.
  • COB chip-on-board
  • the chip-on-board LED package includes a metal heat dissipation plate 50, a chip 55 mounted on the metal heat dissipation plate 50, and a coating on the chip 55.
  • the lead electrode 65 is connected to and electrically connected to an external circuit at the same time, and an upper heat dissipation plate 95 provided on the heat dissipating insulator 90.
  • the metal heat dissipation plate 50 is preferably composed of a metal plate of Al (Aluminum) material having a thickness of approximately 1 mm.
  • the reason why the metal of Al material is used as the metal heat dissipation plate 50 is to quickly transfer heat generated from the chip 55 to the outside under the condition that the chip 55 is directly mounted on the top to promote heat dissipation. For that.
  • the metal heat dissipation plate 50 is not necessarily limited to an Al material, and may be configured using Cu, a Cu alloy, a SUS material, or the like having a high heat dissipation performance of a certain level or more.
  • the chip 55 is configured using a chip 55 made of a semiconductor device that is typically installed to implement the LED.
  • Reference numeral 57 in FIG. 4 denotes a die adhesive for attaching the chip 55 to the metal heat dissipation plate 50.
  • the phosphor 70 is configured to emit a specific color such as RGB while the light emitted from the chip 55 is transmitted.
  • the phosphor 70 absorbs a part of the blue light so as to implement a white LED, yellow, pink or
  • the color temperature may be controlled within a wide range using an inorganic fluorescent material or an organic fluorescent material which is a fluorescent material capable of emitting red light.
  • a molding layer 80 is further applied to protect the chip 55 and the phosphor 70 layer as shown in the drawing.
  • the molding layer 80 may be manufactured and applied to a silicon material.
  • the molding layer 80 is preferably coated to be configured to implement a stable package state while covering up to a portion of the upper heat sink (95).
  • the heat dissipating insulator 90 insulates the lead electrode 65 between the metal heat dissipation plate 50 and the upper heat dissipation plate 95, and heats the heat generated from the metal heat dissipation plate 50. 95) to facilitate delivery.
  • the heat dissipating insulator 90 is preferably made of PEEK (PolyEtherEtherKetone) resin.
  • PEEK resin is a kind of engineering plastic and is a commercialized plastic material having high heat resistance. When PEEK resin is mixed with nano ceramic particles, the PEEK resin may have higher thermal conductivity.
  • the lead electrode 65 passes through the inside of the heat dissipating insulator 90. Two examples of the method of configuring the lead electrode 65 to pass through the heat dissipating insulator 90 will be described.
  • One is a method of forming a hole inside the heat dissipating insulator 90 and inserting the lead electrode 65 into the hole, and the other is a lead electrode (when forming the heat dissipating insulator 90).
  • 65 is a method of injection molding by insert injection.
  • the heat dissipating insulator 90 may be divided into a plurality of layers and stacked in accordance with the exemplary embodiment.
  • the lead electrode 65 may be inserted between the plurality of layers.
  • the heat dissipating insulator 90 is configured such that at least one end of the lead electrode 65 passing therein is exposed to the outside, which connects the chip 55 and the lead electrode 65 to the bonding wire 60. In this case, the bonding wire 60 is easily connected to the lead electrode 65.
  • a structure in which the upper portion of the portion adjacent to the phosphor 70 layer in the heat dissipating insulator 90 is deleted, that is, the step S may be formed.
  • the molding layer 80 is coated and positioned thereon, thereby maintaining a stable fixed state.
  • the lead electrode 65 is connected to the chip 55 through a bonding wire 60, and the other side is electrically connected to an external circuit such as a substrate on which the LED package of the present invention is mounted. It is configured to connect, and may be made of an alloy such as Cu, Ni, Ag, etc., made of a long linear structure is configured to pass through the heat dissipating insulator 90.
  • the upper heat dissipation plate 95 is installed to receive heat generated while the chip 55 is driven from the heat dissipating insulator 90 through the heat dissipating insulator 90 and to be discharged to the outside. It is preferable to be composed of the same metal material as the metal heat dissipation plate 50, but is not necessarily limited thereto, and a metal material having excellent heat dissipation performance may be selected and applied as necessary.
  • the upper heat sink 95 may be composed of a plate-like structure made of Al material, such as the metal heat dissipation plate 50, in which the thickness may be configured to be about 0.2mm.
  • the upper heat sink 95 can be configured using other metals having good heat dissipation performance, such as Cu and Cu alloys, in addition to the Al material.
  • COB chip on board
  • FIG. 5 is a flowchart illustrating a method of manufacturing a chip on board (COB) type LED package according to the present invention.
  • COB chip on board
  • COB chip on board
  • the chip 55 is mounted on the metal heat dissipation plate 50. At this time, the chip 55 is attached to the metal heat dissipation plate 50 by the die adhesive 57 is installed.
  • a heat dissipating insulator 90 including a lead electrode 65 is installed at a position spaced apart from the chip 55 at an upper portion of the metal heat dissipation plate 50. do.
  • the heat dissipating insulator 90 is formed of PEEK resin, and a structure in which the lead electrode 65 is inserted therein or a method manufactured by insert injection method is used.
  • a structure in which the lead electrode 65 is inserted it is also possible to install the heat dissipation insulator 90 on the metal heat dissipation plate 50 and then insert the lead electrode 65 in such a manner.
  • the bonding wire 60 is connected to the lead electrode 65 exposed from the chip 55 and the heat dissipating insulator 90 to thereby form the chip 55 and the lead electrode 65. Is electrically connected.
  • the phosphor 70 is coated to cover the chip 55 and the bonding wire 60.
  • the phosphor 70 is coated by a method such as dotting the upper portion of the metal heat dissipation plate 50 in the inner region of the heat dissipation insulator 90 located around or on both sides of one chip 55.
  • the molding layer 80 is formed on the phosphor 70 so as to cover a part of the phosphor 70 and the heat dissipating insulator 90.
  • the molding layer 80 protects the chip 55, the bonding wire 60, and the phosphor 70, and also covers a part of the heat dissipating insulator 90, so that the heat dissipating insulator 90 heats the metal.
  • the molding layer 80 protects the chip 55, the bonding wire 60, and the phosphor 70, and also covers a part of the heat dissipating insulator 90, so that the heat dissipating insulator 90 heats the metal.
  • it also serves to protect the lead electrode 65 from being exposed to the outside.
  • an upper heat sink 95 made of a metal material is further installed on the heat dissipating insulator 90.
  • the upper heat dissipation plate 95 is preferably installed to be in close contact with the heat dissipating insulator 90 by using an adhesive having a thermal conductivity so that heat transfer can be made smoothly.
  • the method of installing the heat dissipating insulator 90 first and applying the phosphor 70 later is illustrated.
  • the phosphor 70 may be applied first and the heat dissipating insulator 90 may be installed later.
  • the bonding wire 60 is connected to the chip 55 before the phosphor 70 is coated, and after the phosphor 70 is coated, the other end of the bonding wire 60 is connected to the heat dissipating insulator 90. Proceed to how.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un ensemble de DEL à montage direct des puces qui comprend : une plaque de dissipation thermique métallique; une puce montée sur la plaque de dissipation thermique métallique; des substances fluorescentes appliquées sur la puce; et un isolant de dissipateur thermique sur la plaque de dissipation thermique métallique, à l'intérieur de laquelle se trouve une électrode conductrice qui est électriquement connectée à la puce et traverse l'isolant de dissipateur thermique. L'invention permet donc la configuration d'une DEL à forte luminance en améliorant les performances de dissipation thermique.
PCT/KR2009/002382 2008-12-26 2009-05-06 Ensemble de del à montage direct des puces et son procédé de fabrication WO2010074371A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080134754A KR100989579B1 (ko) 2008-12-26 2008-12-26 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법
KR10-2008-0134754 2008-12-26

Publications (1)

Publication Number Publication Date
WO2010074371A1 true WO2010074371A1 (fr) 2010-07-01

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PCT/KR2009/002382 WO2010074371A1 (fr) 2008-12-26 2009-05-06 Ensemble de del à montage direct des puces et son procédé de fabrication

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KR (1) KR100989579B1 (fr)
WO (1) WO2010074371A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130050982A1 (en) * 2011-03-15 2013-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd Method And Apparatus For A Light Source
TWI607586B (zh) * 2015-06-22 2017-12-01 韓政男 發光二極體之封裝方法與結構
JP2019212752A (ja) * 2018-06-05 2019-12-12 日亜化学工業株式会社 発光装置

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Publication number Priority date Publication date Assignee Title
KR101049698B1 (ko) 2010-11-02 2011-07-15 한국세라믹기술원 Ｌｅｄ 어레이 모듈 및 이의 제조방법
CN102769011A (zh) * 2012-06-20 2012-11-07 钟才华 一种高光效高导热的led cob光源封装结构及其制作工艺
KR101319362B1 (ko) * 2013-07-11 2013-10-16 유버 주식회사 칩온보드형 ｕｖ 엘이디 모듈
KR20170024734A (ko) 2015-08-26 2017-03-08 주식회사 리텍 광원 엔진
KR102437786B1 (ko) 2016-01-07 2022-08-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지를 이용한 조명모듈
KR101634950B1 (ko) 2016-02-05 2016-07-11 에이펙스인텍 주식회사 구조가 개선된 cob led 패키지

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US20070069219A1 (en) * 2005-09-28 2007-03-29 Industrial Technology Research Institute Light emitting device
JP2007150233A (ja) * 2005-11-02 2007-06-14 Trion:Kk 色温度可変発光デバイス
JP2007173874A (ja) * 2007-03-28 2007-07-05 Kyocera Corp 発光装置
KR20070078169A (ko) * 2006-01-26 2007-07-31 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069219A1 (en) * 2005-09-28 2007-03-29 Industrial Technology Research Institute Light emitting device
JP2007150233A (ja) * 2005-11-02 2007-06-14 Trion:Kk 色温度可変発光デバイス
KR20070078169A (ko) * 2006-01-26 2007-07-31 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조 방법
JP2007173874A (ja) * 2007-03-28 2007-07-05 Kyocera Corp 発光装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130050982A1 (en) * 2011-03-15 2013-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd Method And Apparatus For A Light Source
US9041046B2 (en) * 2011-03-15 2015-05-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for a light source
TWI607586B (zh) * 2015-06-22 2017-12-01 韓政男 發光二極體之封裝方法與結構
JP2019212752A (ja) * 2018-06-05 2019-12-12 日亜化学工業株式会社 発光装置
JP7231809B2 (ja) 2018-06-05 2023-03-02 日亜化学工業株式会社 発光装置
JP2023052842A (ja) * 2018-06-05 2023-04-12 日亜化学工業株式会社 発光装置
JP2023052858A (ja) * 2018-06-05 2023-04-12 日亜化学工業株式会社 発光装置
JP7364971B2 (ja) 2018-06-05 2023-10-19 日亜化学工業株式会社 発光装置
JP7364970B2 (ja) 2018-06-05 2023-10-19 日亜化学工業株式会社 発光装置

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KR20100076639A (ko) 2010-07-06

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