WO2012002629A1 - Module de diode électroluminescente - Google Patents

Module de diode électroluminescente Download PDF

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Publication number
WO2012002629A1
WO2012002629A1 PCT/KR2010/008953 KR2010008953W WO2012002629A1 WO 2012002629 A1 WO2012002629 A1 WO 2012002629A1 KR 2010008953 W KR2010008953 W KR 2010008953W WO 2012002629 A1 WO2012002629 A1 WO 2012002629A1
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WO
WIPO (PCT)
Prior art keywords
emitting diode
light emitting
metal substrate
conductive layer
insulating layer
Prior art date
Application number
PCT/KR2010/008953
Other languages
English (en)
Korean (ko)
Inventor
김영주
이문호
신민호
임동수
Original Assignee
연세대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 연세대학교 산학협력단 filed Critical 연세대학교 산학협력단
Publication of WO2012002629A1 publication Critical patent/WO2012002629A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting diode (LED) module.
  • LED light emitting diode
  • LEDs light emitting diodes
  • advantages such as eco-friendliness, energy efficiency, and long life.
  • large displays have a light emitting diode as a “back light unit”, and their use is being expanded to automotive lighting and indoor / outdoor lighting.
  • high output of individual light emitting diode elements is essential. The heat generated by the high power consumption causes the temperature rise of the light emitting diode device.
  • PCB printed circuit board
  • An object of the present invention is to provide a light emitting diode module capable of effectively dissipating heat generated from a light emitting diode element.
  • a light emitting diode module for achieving the above object is a metal substrate; An insulating layer formed on the first region of the metal substrate; A first conductive layer formed in a second region of the metal substrate; A second conductive layer formed on the insulating layer; A first lead frame formed on the first conductive layer; A second lead frame formed on the second conductive layer; And a light emitting diode device disposed on the first and second lead frames.
  • the insulating layer is characterized in that it is patterned on top of the metal substrate.
  • the insulating layer is formed by partially patterning an oxide film of the metal substrate.
  • the insulating layer is formed using an anodizing process.
  • a part of the light emitting diode device may be connected to the metal substrate through the first conductive layer and the first lead frame.
  • the light emitting diode device is bonded to a portion of the surface of the metal substrate and the first and second lead frames.
  • the metal substrate is an aluminum substrate, and the conductive layer is characterized in that the copper layer.
  • the insulating layer may be an oxide film of the metal substrate.
  • a light emitting diode module including: a metal substrate including a reflection angle formed on a first surface thereof; A light emitting diode element positioned inside the reflection angle and formed on the first surface of the metal substrate; First and second through holes adjacent to the light emitting diode element and penetrating the metal substrate to form a positive electrode and a negative electrode of the light emitting diode element; An insulating layer formed on the inner surfaces of the first and second through holes and the second surface of the metal substrate; A first conductive layer adjacent to the first through hole and formed in a portion of the insulating layer formed on the second surface; A second conductive layer adjacent to the second through hole and formed on another portion of the insulating layer formed on the second surface; A first connector pin extending from the first through hole to the first conductive layer; A second connector pin extending from the second through hole to the second conductive layer; And a lead frame connecting the first and second connector pins and the light emitting diode element to each other, where
  • the connector pin is a 'P' shaped connector pin.
  • the lead frame may be a wire electrically connecting the connector pins to the positive electrode and the negative electrode of the light emitting diode device, respectively.
  • a light emitting diode module for achieving the above object is a metal substrate; First and second through holes formed in the metal substrate; An insulating layer formed on an inner surface of the first and second through holes, a first surface of the metal substrate, and a portion of a second surface of the metal substrate between the first and second through holes; A first conductive layer adjacent to the first through hole and formed in a portion of the insulating layer formed on the first surface; A second conductive layer adjacent to the second through hole and formed on another portion of the insulating layer formed on the first surface of the metal substrate; A first connector pin extending from the first through hole to the first conductive layer; A second connector pin extending from the second through hole to the second conductive layer; A first lead frame formed on a second surface of the metal substrate positioned between the first and second through holes and connected to the first connector pin; A second lead frame formed on an insulating layer formed on a portion of the second surface of the metal substrate and connected to the second connector pin; A second surface of the metal substrate positioned between the
  • the light emitting diode device is in contact with a second surface of the metal substrate positioned between the first and second through holes.
  • the metal substrate is characterized in that the aluminum substrate.
  • the insulating layer may be an oxide film of the metal substrate.
  • a portion of the light emitting diode element is in contact with a second surface of the metal substrate positioned between the first and second through holes, and another portion of the light emitting diode element is in contact with the first lead frame and the second lead. It is characterized in that the contact on the frame.
  • the light emitting diode module according to the embodiment of the present invention has an effect of effectively dissipating heat generated from the light emitting diode element by conducting heat generated from the light emitting diode element to a metal substrate without passing through an insulating layer. There is.
  • FIG. 1 is a view showing a light emitting diode module according to an embodiment of the present invention.
  • FIG. 2 is a view showing a light emitting diode module according to another embodiment of the present invention.
  • FIG. 3 is a view showing a light emitting diode module according to another embodiment of the present invention.
  • FIG. 4 is a view showing a package of a light emitting diode module according to an embodiment of the present invention.
  • FIG. 5 is a view illustrating a comparison of temperatures of light emitting diode modules according to light emitting diode power.
  • a light emitting diode module may effectively release heat generated from a light emitting diode element by conducting heat generated from the light emitting diode element to a metal substrate without passing through an insulating layer. Will be described with reference to FIGS.
  • FIG. 1 is a view showing a light emitting diode module according to an embodiment of the present invention.
  • a light emitting diode module includes a metal substrate (for example, an aluminum base substrate) 11; An insulating layer 12a formed on a portion (first region) of the metal substrate 11; A conductive layer (first conductive layer and second conductive layer) (for example, a copper thin film layer) 13 formed on the insulating layer 12a and another portion (second region) of the metal substrate 11, respectively; ; A lead frame (first lead frame and second lead frame) 15 formed on the conductive layers (first conductive layer and second conductive layer) (for example, copper thin film layer) 13; It consists of a light emitting diode (light emitting diode package) 14 disposed on the lead frame 15.
  • the lead frame 15 of the LED package is bonded to a portion of the surface of the metal substrate 11 and the conductive layer 13.
  • the insulating layer 12b is formed on the bottom (bottom portion) of the metal substrate (eg, aluminum base substrate) 11.
  • the metal substrate eg, aluminum base substrate
  • the bottom part may be formed to have a thickness of about 15 because only the current portion needs to be blocked.
  • the lower insulating layer 12b performs an electrical insulation process because one portion of the lead frame of the LED package directly communicates with the metal substrate 11.
  • An aluminum oxide film of the metal substrate (eg, aluminum base substrate) 11 may be used as the insulating layers 12a-12b, and the insulating layer 12a may be partially patterned (or etched) of the aluminum oxide film. May be formed only on a portion of the metal substrate (eg, an aluminum base substrate) 11.
  • the metal substrate eg, an aluminum base substrate
  • PCB metal printed circuit board
  • the present invention forms a partial insulating layer 12a based on a metal substrate having a pattern for contact between the light emitting diode and the metal substrate, and copper copper foil (conductive layer 13) on the partial insulating layer 12a.
  • the partial insulating layer 12a may be generated using an anodizing process.
  • the light emitting diode module according to the embodiment of the present invention does not form an insulating layer that causes the deterioration of heat dissipation performance between the light emitting diode (LED) 14 and a part of the surface of the metal substrate 11. In this way (part of the light emitting diode is connected to the surface of the metal substrate through the conductive layer and the lead frame), heat generated from the light emitting diode 14 can be effectively released. That is, in the light emitting diode module according to the embodiment of the present invention, since the oxide film (insulating layer 12a) is formed only in the portion where the circuit pattern is formed, it is possible to effectively discharge heat generated from the light emitting diode.
  • FIG. 2 is a view showing a light emitting diode module according to another embodiment of the present invention. That is, FIG. 2 is a structure for bonding the light emitting diode and the metal substrate, and is applicable to a "chip on board” type in which the light emitting diode module is directly mounted.
  • a light emitting diode module includes a metal base substrate 112 including a reflection angle 160; A light emitting diode element (or LED chip) 120 positioned in the reflection angle 160 and formed on the surface of the metal base substrate 112; First and second through holes 150a-150b adjacent to the light emitting diode device 120 and formed in the metal base substrate 112 to form a positive electrode and a negative electrode of the light emitting diode device 120.
  • the light emitting diode device 120 is mounted on the metal base
  • the reflection angle 160 is formed on the metal base substrate 112, and may be manufactured by forming a groove in an upper portion (first surface) of the metal base substrate 112.
  • the light emitting diode element (or LED chip) 120 is positioned inside the reflection angle 160 (eg, a central portion of the groove) and is in contact with the surface of the metal base substrate 112.
  • the first and second through holes 150a-150b are formed in the groove of the metal base substrate 112 to be adjacent to the light emitting diode element 120 to form a positive electrode and a negative electrode of the light emitting diode element 120. It is formed by vertically penetrating part of.
  • the insulating layer 111 may have an inner surface (wall surface) of the first and second through holes 150a-150b and a lower surface of the metal base substrate 112 (reflection angle 160 or light emitting diode element 120). Surface in opposite directions).
  • the first conductive layer 170a is adjacent to the first through hole 150a and is formed on a portion of the insulating layer 111 formed on the lower surface of the metal base substrate 112.
  • the second conductive layer 170b is adjacent to the second through hole 150b and is formed on another portion of the insulating layer 111 formed on the lower surface of the metal base substrate 112.
  • the first connector pin 130a extends from the first through hole 150a to the first conductive layer 170a.
  • the first connector pin 130a is inserted into the first through hole 150a and extends to the lower portion of the metal substrate 112. That is, the first connector pin 130a has a '-' shape extending from the first through hole 150a to the first conductive layer 170a formed under the metal substrate 112.
  • the second connector pin 130b extends from the second through hole 150b to the second conductive layer 170b.
  • the second connector pin 130b is inserted into the second through hole 150b and extends to the bottom of the metal substrate 112. That is, the second connector pin 130b has a '-' shape extending from the second through hole 150b to the second conductive layer 170b formed under the metal substrate 112.
  • the lead frame (eg, a gold wire) 140 connects the first connector pin 130a and the light emitting diode element 120 to each other, and the second connector pin 130b and the light emitting diode element. Connect 120 to each other. That is, the gold wire 140 is bonded to the light emitting diode element 120 and each of the first and second connector pins (the positive electrode and the negative electrode) to flow the current.
  • the reflection angle 160 generated for the light emitting efficiency of the light emitting diode device 120 may be viewed as one unit, and may be formed in a number of units according to the "application". In addition, the number of light emitting diodes 120 inside the reflection angle 160 is not limited.
  • the light emitting diode module according to another embodiment of the present invention is a method for bonding an LED package rather than an “LED chip”.
  • a light emitting diode module includes a metal substrate 220; First and second through holes formed in the metal substrate 220; Insulating layers 210 and 210a formed on inner surfaces of the first and second through holes, lower surfaces of the metal substrate 220, and upper portions of the metal substrate 220 between the first and second through holes.
  • the light emitting diode device 250 is in contact with the surface of the metal substrate 220 is formed with the insulating layer (210, 210a) to improve the heat dissipation effect.
  • the first conductive layer 260a is formed on a portion of the insulating layer 210 adjacent to the first through hole and formed on the lower surface of the metal base substrate 220.
  • the second conductive layer 260b is adjacent to the second through hole and is formed on another portion of the insulating layer 210 formed on the lower surface of the metal base substrate 220.
  • the first connector pin 230a extends from the first through hole to the first conductive layer 260a.
  • the first connector pin 230a is inserted into the first through hole and extends to the lower portion of the metal substrate 220. That is, the first connector pin 230a has a '-' shape extending from the first through hole to the first conductive layer 260a formed under the metal substrate 220.
  • the second connector pin 230b extends from the second through hole to the second conductive layer 260b.
  • the second connector pin 230b is inserted into the second through hole and extends to the lower portion of the metal substrate 220. That is, the second connector pin 230b has a '-' shape extending from the second through hole to the second conductive layer 260b formed under the metal substrate 220.
  • the first lead frame 240a connects the first connector pin 230a and the light emitting diode element 250 to each other, and the second lead frame 240b connects the second connector pin 230b and the light emission.
  • the diode elements 120 are connected to each other. That is, the first and second lead frames 240a-240b are connected to the light emitting diode device 250 and the first and second connector pins (positive electrode and negative electrode), respectively, for the flow of current.
  • FIG. 4 is a view showing a package of a light emitting diode module according to an embodiment of the present invention.
  • the LED package As shown in FIG. 4, it consists of the aluminum substrate 310, the insulating layer 320 laminated
  • the LED package may be configured in five pieces and includes an LED chip, a lead frame, and a light emitting diode mold (or LED chip). A portion of the light emitting diode mold is in contact with the aluminum substrate 310.
  • the package of the LED module according to an embodiment of the present invention may be configured in various forms.
  • the hole of the patterned aluminum substrate may be manufactured to prevent the conduction between the lead frames in the LED package, and the lead frame portion in which the LED chip is mounted is bonded with the metal.
  • three types of "Prepreg insulation layer" of epoxy resin produced at 100um thickness, an oxide insulation layer which can be produced at 50um thickness, and a metal substrate (PCB) having a partial oxide insulation layer proposed in the present invention The simulation was performed according to (Type).
  • the surface of the light emitting diode module has a natural convection boundary condition of 27 ° C., and considering that the efficiency of the light emitting diode is 20 to 30%, the input power per volume of the unit chip in the light emitting diode package is 80%. It was assumed that heat was generated.
  • FIG. 5 is a view illustrating a comparison of temperatures of light emitting diode modules according to light emitting diode power.
  • the partial anodizing structure may use a higher power LED in the range of 10 to 30% compared to an LED module having an epoxy layer and an anodizing layer.
  • the new module structure proposed in the present invention can utilize up to 4W LED power while the epoxy layer and anodizing layer are used as the insulating layer.
  • the modular structure with up to 3.5W is available.
  • the light emitting diode module according to the embodiment of the present invention, heat generated from the light emitting diode element by conducting heat generated in the light emitting diode element to a metal substrate (Metal PCB) without passing through the insulating layer. Can be effectively released.
  • Metal PCB Metal substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un module de diode électroluminescente pouvant dissiper efficacement la chaleur produite par un dispositif à DEL. À cet effet, le module de DEL selon la présente invention comprend: un substrat métallique; une couche d'isolation formée sur une première région du substrat métallique; une première couche conductrice formée sur une seconde région du substrat métallique; une seconde couche conductrice formée sur la couche d'isolation; une première grille de connexion formée sur la première couche conductrice; une seconde grille de connexion formée sur la seconde couche conductrice; et un dispositif à DEL disposé sur les première et seconde grilles de connexion.
PCT/KR2010/008953 2010-07-02 2010-12-14 Module de diode électroluminescente WO2012002629A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100063922A KR101130137B1 (ko) 2010-07-02 2010-07-02 발광다이오드 모듈
KR10-2010-0063922 2010-07-02

Publications (1)

Publication Number Publication Date
WO2012002629A1 true WO2012002629A1 (fr) 2012-01-05

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PCT/KR2010/008953 WO2012002629A1 (fr) 2010-07-02 2010-12-14 Module de diode électroluminescente

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KR (1) KR101130137B1 (fr)
WO (1) WO2012002629A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013151736A2 (fr) 2012-04-02 2013-10-10 modeRNA Therapeutics Production in vivo de protéines
WO2013151666A2 (fr) 2012-04-02 2013-10-10 modeRNA Therapeutics Polynucléotides modifiés destinés à la production de produits biologiques et de protéines associées à une maladie humaine
WO2014152211A1 (fr) 2013-03-14 2014-09-25 Moderna Therapeutics, Inc. Formulation et administration de compositions de nucléosides, de nucléotides, et d'acides nucléiques modifiés
WO2015034925A1 (fr) 2013-09-03 2015-03-12 Moderna Therapeutics, Inc. Polynucléotides circulaires
WO2015034928A1 (fr) 2013-09-03 2015-03-12 Moderna Therapeutics, Inc. Polynucléotides chimériques
WO2015110957A2 (fr) 2014-01-21 2015-07-30 De Beer Joel Hybridosomes, compositions les comprenant, procédés de production, et leurs utilisations
WO2016014846A1 (fr) 2014-07-23 2016-01-28 Moderna Therapeutics, Inc. Polynucléotides modifiés destinés à la production d'anticorps intracellulaires
EP4011451A1 (fr) 2015-10-22 2022-06-15 ModernaTX, Inc. Vaccins contre le virus respiratoire
EP4074834A1 (fr) 2012-11-26 2022-10-19 ModernaTX, Inc. Arn à terminaison modifiée
EP4144378A1 (fr) 2011-12-16 2023-03-08 ModernaTX, Inc. Nucléoside modifié, nucléotide, et compositions d'acides nucléiques
WO2023161350A1 (fr) 2022-02-24 2023-08-31 Io Biotech Aps Administration nucléotidique d'une thérapie anticancéreuse

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WO2009130743A1 (fr) * 2008-04-25 2009-10-29 パナソニック株式会社 Boîtier d’élément optique, dispositif luminescent à semi-conducteur et dispositif d’éclairage

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US20070158674A1 (en) * 2006-01-06 2007-07-12 Yuichi Taguchi Light emitting device and manufacturing method thereof
US20090146155A1 (en) * 2007-12-11 2009-06-11 Foxsemicon Integrated Technology, Inc. Light-emitting diode
WO2009130743A1 (fr) * 2008-04-25 2009-10-29 パナソニック株式会社 Boîtier d’élément optique, dispositif luminescent à semi-conducteur et dispositif d’éclairage

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4144378A1 (fr) 2011-12-16 2023-03-08 ModernaTX, Inc. Nucléoside modifié, nucléotide, et compositions d'acides nucléiques
WO2013151666A2 (fr) 2012-04-02 2013-10-10 modeRNA Therapeutics Polynucléotides modifiés destinés à la production de produits biologiques et de protéines associées à une maladie humaine
WO2013151736A2 (fr) 2012-04-02 2013-10-10 modeRNA Therapeutics Production in vivo de protéines
EP4074834A1 (fr) 2012-11-26 2022-10-19 ModernaTX, Inc. Arn à terminaison modifiée
WO2014152211A1 (fr) 2013-03-14 2014-09-25 Moderna Therapeutics, Inc. Formulation et administration de compositions de nucléosides, de nucléotides, et d'acides nucléiques modifiés
WO2015034925A1 (fr) 2013-09-03 2015-03-12 Moderna Therapeutics, Inc. Polynucléotides circulaires
WO2015034928A1 (fr) 2013-09-03 2015-03-12 Moderna Therapeutics, Inc. Polynucléotides chimériques
EP3791863A1 (fr) 2014-01-21 2021-03-17 Anjarium Biosciences AG Procédé de production d'hybridosomes
WO2015110957A2 (fr) 2014-01-21 2015-07-30 De Beer Joel Hybridosomes, compositions les comprenant, procédés de production, et leurs utilisations
US11944706B2 (en) 2014-01-21 2024-04-02 Anjarium Biosciences Ag Hybridosomes, compositions comprising the same, processes for their production and uses thereof
WO2016014846A1 (fr) 2014-07-23 2016-01-28 Moderna Therapeutics, Inc. Polynucléotides modifiés destinés à la production d'anticorps intracellulaires
EP4011451A1 (fr) 2015-10-22 2022-06-15 ModernaTX, Inc. Vaccins contre le virus respiratoire
EP4349404A2 (fr) 2015-10-22 2024-04-10 ModernaTX, Inc. Vaccins contre le virus respiratoire
EP4349405A2 (fr) 2015-10-22 2024-04-10 ModernaTX, Inc. Vaccins contre le virus respiratoire
WO2023161350A1 (fr) 2022-02-24 2023-08-31 Io Biotech Aps Administration nucléotidique d'une thérapie anticancéreuse

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