JP2023052842A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2023052842A JP2023052842A JP2023014407A JP2023014407A JP2023052842A JP 2023052842 A JP2023052842 A JP 2023052842A JP 2023014407 A JP2023014407 A JP 2023014407A JP 2023014407 A JP2023014407 A JP 2023014407A JP 2023052842 A JP2023052842 A JP 2023052842A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 230000017525 heat dissipation Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 58
- 230000005855 radiation Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 14
- 238000005304 joining Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 24
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005476 soldering Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
【解決手段】 発光装置は、半導体レーザ素子と、金属を主材料とする底部と、セラミックを主材料とする枠部と、が接合された基部と、を備え、基部は、半導体レーザ素子が配される配置面と、配された半導体レーザ素子の周りを囲う枠と、半導体レーザ素子を電気的に接続するための第1及び第2電極層と、を有し、底部は、配置面を有し、枠部は、配置面と接合する接合面と、接合面と交わり配置面よりも大きい枠を形成する内側面と、接合面と交わり配置面よりも小さい枠を形成する内側面と、を有し、第2電極層は、枠部において、配置面よりも小さい枠を形成する内側面の少なくとも一部と交わる平面であって、接合面とは異なる平面上に設けられる。
【選択図】 図3
Description
図1は、第1実施形態に係る発光装置1の模式図であり、図2は発光装置1の基部の内部構造を説明するための上面図であり、図3は図1のIII-IIIを結ぶ直線における矢印方向の断面図を示す。図2においては内部構造を記すため、蓋部120、接着部130及びレンズ部材140を破線で記し、これらの部材を透過した場合に見られる部分を実線で記す。また、図が煩雑になるのを避けるため、図3で記されているワイヤ180は、図2においては省略している。
図11は、第2実施形態に係る発光装置2の断面図を示す。なお、発光装置2の外観の模式図は図1のものと変わらず、上面視における内部構造についても図2のものと変わらない。第2実施形態に係る発光装置2は、第1実施形態に係る発光装置1と比べて、基部を構成する底部の構造が異なる。特に、基板と接合する底部の接合面が第1実施形態とは異なっており、基板の接合面における絶縁部や露出部の形状をこれに対応したものにすれば、その他の点については、第1実施形態で述べた構造や材料等を採用することができる。
第1変形例の発光装置3は、第2実施形態で示した発光装置2とは他の方法で、基板との接合面における枠部と底部との間隔が、枠部との接合面における枠部と底部との間隔よりも広い発光装置を実現する。
図15は、第2変形例に係る発光装置4の断面図を示す。また図16は、第2変形例に係る底部の模式図を示す。図15に示すように、発光装置4は、底部412において、基板400との接合面が枠部411との接合面よりも小さく、側面413が傾斜を有している。このように側面413に傾斜を設けることで、基板400との接合面における枠部411と底部412との間隔を、枠部411との接合面における枠部411と底部412との間隔よりも広くすることができる。なお、第1変形例と同様に、底部412に傾斜を設ける代わりに、枠部411に設けるようにしてもよい。
100…基板
101…放熱部
102…絶縁部
103…金属膜
104…金属領域
105…絶縁領域
106…露出部
110…基部
111…枠部
112…第1電極層
113…接合面
114…第2電極層
115…内側面
116…内側面
117…内側面
118…底部
119…側面
120…蓋部
130…接着部
140…レンズ部材
150…光反射部材
160…サブマウント
170…半導体レーザ素子
180…ワイヤ
2…発光装置
200…基板
201…露出部
210…基部
211…枠部
212…接合面
213…底部
214…窪み部
215…接合面
3…発光装置
300…基板
310…基部
311…枠部
312…窪み部
313…底部
4…発光装置
400…基板
410…基部
411…枠部
412…底部
413…側面
Claims (12)
- 半導体レーザ素子と、
前記半導体レーザ素子から放射された光を反射する光反射面を有する光反射部材と、
金属を主材料とする底部と、セラミックを主材料とし前記底部が接合された枠部と、前記半導体レーザ素子と電気的に接続される第1及び第2電極層と、を有する基部と、を備え、
前記底部は、前記半導体レーザ素子が配される配置面を有し、
前記枠部は、配された前記半導体レーザ素子の周りを囲う枠を形成しており、前記底部と接合する接合面と、前記底部が収まる枠を形成する第1内側面と、前記底部によって覆われる枠を形成する第2内側面と、前記第2内側面の少なくとも一部と交わる平面と、を有し、
前記第2電極層は、前記枠部による枠の内側に形成された段差部における平面であって、前記第2内側面の少なくとも一部と交わる平面であり、かつ、前記接合面とは異なる平面上に設けられ、
前記段差部は、下面視において枠の全周に亘って設けられる一方で、上面視において枠の全周に亘って設けられておらず、
前記段差部は、上面視において、前記光反射部材を挟んで前記半導体レーザ素子と反対側に位置する辺に設けられておらず、
前記段差部は、上面視において、前記半導体レーザ素子を挟んで前記光反射部材と反対側に位置する辺に設けられている発光装置。 - 半導体レーザ素子と、
前記半導体レーザ素子から放射された光を反射する光反射面を有する光反射部材と、
金属を主材料とする底部と、セラミックを主材料とし前記底部が接合された枠部と、前記半導体レーザ素子と電気的に接続される第1及び第2電極層と、を有する基部と、
前記半導体レーザ素子と電気的に接続するワイヤを備え、
前記底部は、前記半導体レーザ素子が配される配置面を有し、
前記枠部は、配された前記半導体レーザ素子の周りを囲う枠を形成しており、前記底部と接合する接合面と、前記底部が収まる枠を形成する第1内側面と、前記底部によって覆われる枠を形成する第2内側面と、前記第2内側面の少なくとも一部と交わる平面と、を有し、
前記第2電極層は、前記枠部による枠の内側に形成された段差部における平面であって、前記第2内側面の少なくとも一部と交わる平面であり、かつ、前記接合面とは異なる平面上に設けられ、
前記第2電極層は、上面視において、前記光反射部材を挟んで前記半導体レーザ素子と反対側には設けられておらず、
前記第2電極層は、上面視において、前記半導体レーザ素子を挟んで前記光反射部材と反対側に設けられており、
前記ワイヤは、前記半導体レーザ素子を挟んで前記光反射部材と反対側に設けられている前記第2電極層に接合される発光装置。 - 前記段差部は、下面視において矩形の枠の四辺すべてを形成し、上面視において矩形の枠の三辺のみに亘って設けられる、請求項1または2に記載の発光装置。
- 前記段差部は上面視において、枠の一辺あるいは二辺に沿って設けられる、請求項1または2に記載の発光装置。
- 前記枠部は、底面において前記第1電極層を有し、
前記枠部の対向する両側の辺には、前記底面において前記第1電極層が設けられる、請求項1または2に記載の発光装置。 - 前記枠部の底面の内端における前記第1内側面が形成する枠と、前記枠部の上面の内端における内側面が形成する枠とは、前記第1電極層が設けられる両側の辺において等しい、請求項5に記載の発光装置。
- 前記枠部の底面は、対向する辺において同じ幅である、請求項5に記載の発光装置。
- 前記基部と接合する基板を備える、請求項1または2に記載の発光装置。
- 前記基板は、放熱部と、絶縁部と、金属膜とを有し、
前記放熱部と前記金属膜とは、電気的に接続しておらず、
前記放熱部と前記底部が接合し、前記金属膜と前記枠部が接合する、請求項8に記載の発光装置。 - 前記枠部と接合する蓋部を備える、請求項1または2に記載の発光装置。
- 前記半導体レーザ素子は、気密封止された空間に配されている、請求項10に記載の発光装置。
- 前記蓋部と接合するレンズ部材をさらに備える、請求項10に記載の発光装置。
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Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108391A (ja) * | 1989-09-21 | 1991-05-08 | Sony Corp | 光集積回路装置及び集積回路用パッケージ |
JPH03214112A (ja) * | 1990-01-19 | 1991-09-19 | Sony Corp | 光集積回路及び集積回路用パッケージ |
JPH05129711A (ja) * | 1991-10-30 | 1993-05-25 | Rohm Co Ltd | パツケージ型半導体レーザ装置 |
JPH06203403A (ja) * | 1992-10-22 | 1994-07-22 | Matsushita Electron Corp | 半導体レーザ装置および光ピックアップ装置 |
JP2005012155A (ja) * | 2003-05-26 | 2005-01-13 | Matsushita Electric Works Ltd | 発光装置 |
JP2005101665A (ja) * | 2004-11-05 | 2005-04-14 | Shinken Chin | フリップチップ式発光ダイオードの発光装置製造方法 |
JP2006018070A (ja) * | 2004-07-02 | 2006-01-19 | Seiko Epson Corp | 光源装置及びプロジェクタ |
JP2006080124A (ja) * | 2004-09-07 | 2006-03-23 | Seiko Epson Corp | 発光装置及びその製造方法 |
JP2006216764A (ja) * | 2005-02-03 | 2006-08-17 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
JP2006237141A (ja) * | 2005-02-23 | 2006-09-07 | Stanley Electric Co Ltd | サブマウント型led |
JP2007012765A (ja) * | 2005-06-29 | 2007-01-18 | C I Kasei Co Ltd | 発光ダイオード複合素子 |
JP2007012764A (ja) * | 2005-06-29 | 2007-01-18 | C I Kasei Co Ltd | 発光ダイオード複合素子 |
JP2007096320A (ja) * | 2005-09-28 | 2007-04-12 | Ind Technol Res Inst | 発光装置 |
JP2007116138A (ja) * | 2005-09-22 | 2007-05-10 | Lexedis Lighting Gmbh | 発光装置 |
JP2007150233A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 色温度可変発光デバイス |
JP2007150228A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 発光ダイオード実装基板 |
JP2007234846A (ja) * | 2006-03-01 | 2007-09-13 | Ngk Spark Plug Co Ltd | 発光素子用セラミックパッケージ |
JP2007317956A (ja) * | 2006-05-26 | 2007-12-06 | Nichia Chem Ind Ltd | 発光装置 |
JP2008218678A (ja) * | 2007-03-05 | 2008-09-18 | Nichia Chem Ind Ltd | 発光装置 |
JP2008543064A (ja) * | 2005-05-31 | 2008-11-27 | ネオバルブ テクノロジーズ,インコーポレイテッド | 半導体発光装置およびその製造方法 |
JP2009517853A (ja) * | 2005-11-28 | 2009-04-30 | ネオバルブ テクノロジーズ,インコーポレイテッド | 半導体向けマルチチップモジュール単一パッケージ構造 |
JP2009267415A (ja) * | 2008-04-25 | 2009-11-12 | Itswell Co Ltd | 大電力発光ダイオードランプ光源およびその製造方法 |
JP2010087181A (ja) * | 2008-09-30 | 2010-04-15 | Panasonic Corp | 光素子用パッケージ、半導体発光装置および照明装置 |
WO2010074371A1 (ko) * | 2008-12-26 | 2010-07-01 | 루미마이크로 주식회사 | 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법 |
JP2010532929A (ja) * | 2007-07-06 | 2010-10-14 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2013179180A (ja) * | 2012-02-28 | 2013-09-09 | Sumitomo Electric Device Innovations Inc | 光モジュール、光モジュール生産物 |
WO2014017273A1 (ja) * | 2012-07-27 | 2014-01-30 | 京セラ株式会社 | 半導体素子収納用パッケージおよび半導体装置 |
JP2015211196A (ja) * | 2014-04-30 | 2015-11-24 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置 |
JP2016184653A (ja) * | 2015-03-26 | 2016-10-20 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2016219779A (ja) * | 2015-05-20 | 2016-12-22 | 日亜化学工業株式会社 | 発光装置 |
US20170005248A1 (en) * | 2015-06-30 | 2017-01-05 | Lg Innotek Co., Ltd. | Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device |
JP2017085036A (ja) * | 2015-10-30 | 2017-05-18 | 日亜化学工業株式会社 | 発光装置 |
JP2017208484A (ja) * | 2016-05-19 | 2017-11-24 | 日亜化学工業株式会社 | 発光装置及び発光装置用パッケージ |
WO2017209149A1 (ja) * | 2016-05-31 | 2017-12-07 | シチズン電子株式会社 | 発光装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5327443A (en) * | 1991-10-30 | 1994-07-05 | Rohm Co., Ltd. | Package-type semiconductor laser device |
US7495322B2 (en) | 2003-05-26 | 2009-02-24 | Panasonic Electric Works Co., Ltd. | Light-emitting device |
JP4066375B2 (ja) | 2004-03-17 | 2008-03-26 | 松下電器産業株式会社 | 半導体レーザ装置 |
JP4598432B2 (ja) * | 2004-05-12 | 2010-12-15 | 浜松ホトニクス株式会社 | 電子部品及びその製造方法 |
JP5192811B2 (ja) * | 2004-09-10 | 2013-05-08 | ソウル セミコンダクター カンパニー リミテッド | 多重モールド樹脂を有する発光ダイオードパッケージ |
JP4882439B2 (ja) | 2006-01-13 | 2012-02-22 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP2008172113A (ja) | 2007-01-15 | 2008-07-24 | Ngk Spark Plug Co Ltd | 配線基板 |
JP5439764B2 (ja) * | 2008-08-18 | 2014-03-12 | セイコーエプソン株式会社 | 固体光源装置、プロジェクタ、モニタ装置 |
JP5968674B2 (ja) | 2011-05-13 | 2016-08-10 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びこれを備える紫外線ランプ |
KR101933022B1 (ko) | 2011-05-13 | 2018-12-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 자외선 램프 |
US10490712B2 (en) * | 2011-07-21 | 2019-11-26 | Cree, Inc. | Light emitter device packages, components, and methods for improved chemical resistance and related methods |
KR20140039740A (ko) | 2012-09-25 | 2014-04-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2016004879A (ja) | 2014-06-16 | 2016-01-12 | 株式会社フジクラ | 筐体構造 |
JP2016004880A (ja) | 2014-06-16 | 2016-01-12 | 株式会社フジクラ | 筐体構造 |
JP7231809B2 (ja) | 2018-06-05 | 2023-03-02 | 日亜化学工業株式会社 | 発光装置 |
-
2018
- 2018-06-05 JP JP2018107569A patent/JP7231809B2/ja active Active
-
2019
- 2019-05-31 US US16/428,959 patent/US10930820B2/en active Active
- 2019-06-04 CN CN201910480139.3A patent/CN110571642A/zh active Pending
- 2019-06-04 EP EP23159600.8A patent/EP4220874A1/en active Pending
- 2019-06-04 EP EP19178008.9A patent/EP3579361B1/en active Active
- 2019-06-05 TW TW108119492A patent/TWI802706B/zh active
- 2019-06-05 TW TW112116422A patent/TW202333395A/zh unknown
-
2021
- 2021-01-29 US US17/162,913 patent/US11581458B2/en active Active
-
2023
- 2023-01-10 US US18/152,708 patent/US20230163250A1/en active Pending
- 2023-02-02 JP JP2023014407A patent/JP7364970B2/ja active Active
- 2023-02-02 JP JP2023014632A patent/JP7364971B2/ja active Active
- 2023-09-27 JP JP2023164084A patent/JP7469728B2/ja active Active
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108391A (ja) * | 1989-09-21 | 1991-05-08 | Sony Corp | 光集積回路装置及び集積回路用パッケージ |
JPH03214112A (ja) * | 1990-01-19 | 1991-09-19 | Sony Corp | 光集積回路及び集積回路用パッケージ |
JPH05129711A (ja) * | 1991-10-30 | 1993-05-25 | Rohm Co Ltd | パツケージ型半導体レーザ装置 |
JPH06203403A (ja) * | 1992-10-22 | 1994-07-22 | Matsushita Electron Corp | 半導体レーザ装置および光ピックアップ装置 |
JP2005012155A (ja) * | 2003-05-26 | 2005-01-13 | Matsushita Electric Works Ltd | 発光装置 |
JP2006018070A (ja) * | 2004-07-02 | 2006-01-19 | Seiko Epson Corp | 光源装置及びプロジェクタ |
JP2006080124A (ja) * | 2004-09-07 | 2006-03-23 | Seiko Epson Corp | 発光装置及びその製造方法 |
JP2005101665A (ja) * | 2004-11-05 | 2005-04-14 | Shinken Chin | フリップチップ式発光ダイオードの発光装置製造方法 |
JP2006216764A (ja) * | 2005-02-03 | 2006-08-17 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
JP2006237141A (ja) * | 2005-02-23 | 2006-09-07 | Stanley Electric Co Ltd | サブマウント型led |
JP2008543064A (ja) * | 2005-05-31 | 2008-11-27 | ネオバルブ テクノロジーズ,インコーポレイテッド | 半導体発光装置およびその製造方法 |
JP2007012765A (ja) * | 2005-06-29 | 2007-01-18 | C I Kasei Co Ltd | 発光ダイオード複合素子 |
JP2007012764A (ja) * | 2005-06-29 | 2007-01-18 | C I Kasei Co Ltd | 発光ダイオード複合素子 |
JP2007116138A (ja) * | 2005-09-22 | 2007-05-10 | Lexedis Lighting Gmbh | 発光装置 |
JP2007096320A (ja) * | 2005-09-28 | 2007-04-12 | Ind Technol Res Inst | 発光装置 |
JP2007150233A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 色温度可変発光デバイス |
JP2007150228A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 発光ダイオード実装基板 |
JP2009517853A (ja) * | 2005-11-28 | 2009-04-30 | ネオバルブ テクノロジーズ,インコーポレイテッド | 半導体向けマルチチップモジュール単一パッケージ構造 |
JP2007234846A (ja) * | 2006-03-01 | 2007-09-13 | Ngk Spark Plug Co Ltd | 発光素子用セラミックパッケージ |
JP2007317956A (ja) * | 2006-05-26 | 2007-12-06 | Nichia Chem Ind Ltd | 発光装置 |
JP2008218678A (ja) * | 2007-03-05 | 2008-09-18 | Nichia Chem Ind Ltd | 発光装置 |
JP2010532929A (ja) * | 2007-07-06 | 2010-10-14 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2009267415A (ja) * | 2008-04-25 | 2009-11-12 | Itswell Co Ltd | 大電力発光ダイオードランプ光源およびその製造方法 |
JP2010087181A (ja) * | 2008-09-30 | 2010-04-15 | Panasonic Corp | 光素子用パッケージ、半導体発光装置および照明装置 |
WO2010074371A1 (ko) * | 2008-12-26 | 2010-07-01 | 루미마이크로 주식회사 | 칩온보드형 발광 다이오드 패키지 및 그것의 제조 방법 |
JP2013179180A (ja) * | 2012-02-28 | 2013-09-09 | Sumitomo Electric Device Innovations Inc | 光モジュール、光モジュール生産物 |
WO2014017273A1 (ja) * | 2012-07-27 | 2014-01-30 | 京セラ株式会社 | 半導体素子収納用パッケージおよび半導体装置 |
JP2015211196A (ja) * | 2014-04-30 | 2015-11-24 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置 |
JP2016184653A (ja) * | 2015-03-26 | 2016-10-20 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2016219779A (ja) * | 2015-05-20 | 2016-12-22 | 日亜化学工業株式会社 | 発光装置 |
US20170005248A1 (en) * | 2015-06-30 | 2017-01-05 | Lg Innotek Co., Ltd. | Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device |
JP2017085036A (ja) * | 2015-10-30 | 2017-05-18 | 日亜化学工業株式会社 | 発光装置 |
JP2017208484A (ja) * | 2016-05-19 | 2017-11-24 | 日亜化学工業株式会社 | 発光装置及び発光装置用パッケージ |
WO2017209149A1 (ja) * | 2016-05-31 | 2017-12-07 | シチズン電子株式会社 | 発光装置 |
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JP7364971B2 (ja) | 2018-06-05 | 2023-10-19 | 日亜化学工業株式会社 | 発光装置 |
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