CN106159065A - A kind of DBC integrating packaging module for high-power LED chip - Google Patents
A kind of DBC integrating packaging module for high-power LED chip Download PDFInfo
- Publication number
- CN106159065A CN106159065A CN201610806896.1A CN201610806896A CN106159065A CN 106159065 A CN106159065 A CN 106159065A CN 201610806896 A CN201610806896 A CN 201610806896A CN 106159065 A CN106159065 A CN 106159065A
- Authority
- CN
- China
- Prior art keywords
- led chip
- dbc
- reflector
- lens
- camera lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002320 enamel (paints) Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of DBC integrating packaging module for high-power LED chip, including DBC substrate, the lens bracket that is fixedly linked with described DBC substrate and pass through described lens bracket and the glass lens being connected with described DBC substrate, described DBC substrate includes metal level, cover the ceramic layer of described metal level and the line layer being connected with described ceramic layer, described line layer is provided with several LED chip, described lens bracket is provided with several band reflector camera lens installing holes, described band reflector camera lens installing hole is provided with reflector, described LED chip position is corresponding with the described position with reflector camera lens installing hole, described glass lens passes through described reflector and is connected with described LED chip.Light extraction efficiency of the present invention is high, high temperature resistant ageing-resistant, Stability Analysis of Structures, simple, and cost savings had both saved the production time, and the high_voltage isolation having reached again electronic product requires.
Description
Technical field
The present invention relates to LED chip encapsulation technology, specifically, relate to a kind of DBC collection for high-power LED chip
Become package module.
Background technology
The base plate for packaging of the high-power LED module of prior art typically has two kinds, ceramic substrate and metal substrate, encapsulating mirror
Head generally uses gluing camera lens.But its defect is as follows: ceramic substrate relatively costly, and fabrication cycle is longer；Metal substrate
Pressure voltage relatively low, there is security risk；Gluing camera lens is aging comparatively fast, will turn to be yellow, affect light extraction efficiency in 1 year.
Drawbacks described above, is worth improving.
Content of the invention
In order to overcome the deficiency of existing technology, the present invention provides the integrated envelope of a kind of DBC for high-power LED chip
Die-filling piece.
Technical solution of the present invention is as described below:
A kind of DBC integrating packaging module for high-power LED chip, it is characterised in that include DBC substrate and described DBC base
Lens bracket that plate is fixedly linked and pass through described lens bracket and the glass lens being connected with described DBC substrate, described DBC base
Plate includes metal level, the ceramic layer covering described metal level and the line layer adjacent with described ceramic layer, and described line layer sets
Having several LED chip, described lens bracket is provided with several band reflector camera lens installing holes, and described band reflector camera lens is installed
Hole is provided with reflector, and described LED chip position is corresponding with the described position with reflector camera lens installing hole, described glass mirror
Head passes through described reflector and is connected with described LED chip.
Further, the consistency of thickness of described metal level and described line layer, and described metal level and described line layer
Material is copper.
Further, the material of described ceramic layer is aluminum oxide.
Further, the material of described ceramic layer is aluminium nitride.
According to the present invention of such scheme, it has the beneficial effects that, present configuration is simple, and cost savings, when both saving
Between, the high_voltage isolation reaching again electronic product requires.In the present invention, lens bracket is provided with reflector, has both improve light extraction efficiency,
Take into account again the function of support fixed lens；In the present invention, glass lens is high temperature resistant ageing-resistant, does not haves gluing camera lens the same
Camera lens turn to be yellow affect light problem.
Brief description
Fig. 1 is the structural representation of the present invention；
Fig. 2 is explosive view of the present invention；
Fig. 3 is DBC substrate schematic diagram of the present invention.
In the drawings, the 1st, metal level；2nd, ceramic layer；3rd, line layer；4th, DBC substrate；5th, lens bracket；6th, glass lens；7、
Screw；8th, reflector camera lens installing hole is carried.
Detailed description of the invention
Below in conjunction with the accompanying drawings and the present invention is conducted further description by embodiment:
As Figure 1-3, a kind of DBC integrating packaging module for high-power LED chip, including DBC substrate 4 and described DBC
Lens bracket 5 that substrate 4 is fixedly linked and pass through described lens bracket 5 and the glass lens 6 being connected with described DBC substrate 4, institute
State DBC substrate 4 and include that the 1st, metal level covers ceramic layer 2 and the line layer 3 adjacent with described ceramic layer 2, the institute of described metal level 1
Stating line layer 3 and being provided with several LED chip, described lens bracket 5 is provided with several band reflector camera lens installing holes 8, described
Band reflector camera lens installing hole 8 is provided with reflector, described LED chip position and the described position with reflector camera lens installing hole 8
Putting corresponding, described glass lens 6 passes through described reflector and is connected with described LED chip.
The consistency of thickness of described metal level 1 and described line layer 3, and described metal level 1 with the material of described line layer 3 is
Copper, the material of described ceramic layer 2 is aluminum oxide or is aluminium nitride.
According to the present invention of such scheme, it has the beneficial effects that, present configuration is simple, and cost savings, when both saving
Between, the high_voltage isolation reaching again electronic product requires.In the present invention, lens bracket is provided with reflector, has both improve light extraction efficiency,
Take into account again the function of support fixed lens；In the present invention, glass lens is high temperature resistant ageing-resistant, does not haves gluing camera lens the same
Camera lens turn to be yellow affect light problem.
The specific embodiment of the invention:
As a example by the DBC integrating packaging module of a 40 chips of our company, bottom surface is DBC substrate 4, and DBC substrate 4 is divided into
3 layers, the bottom of DBC substrate 4 and top layer are the metals of consistency of thickness, and metal material is copper, and the metal etch circuit of top layer becomes line
Road floor 3, another side is constant is then metal level 1, and intermediate layer is ceramic layer 2, and ceramic layer 2 material is aluminum oxide or aluminium nitride, root
Require to set the thickness of metal level 1 and ceramic layer 2 according to the intensity of LED operation current requirements and substrate, be provided with above line layer 3
40 high-power LED chips, centre is lens bracket 5, and lens bracket 5 is provided with band reflector camera lens installing hole 8, carries reflector mirror
The position of head installing hole 8 is corresponding with chip position, and each band reflector camera lens installing hole 8 is provided with reflector, by glass lens 6
Being fixed on above DBC substrate 4 through reflector by lens bracket 5, being used for controlling LED emergent light, wherein lens bracket 5 passes through
Screw 7 is fixed on DBC substrate 4, or lens bracket 5 is directly clamped among on DBC substrate 4.
It should be appreciated that for those of ordinary skills, can be improved according to the above description or be converted,
And all these modifications and variations all should belong to the protection domain of claims of the present invention.
Above in conjunction with accompanying drawing, exemplary description is carried out to patent of the present invention, it is clear that the realization of patent of the present invention is not subject to
The restriction of aforesaid way, if the various improvement that the method design that have employed patent of the present invention is carried out with technical scheme, or without
Improve and design and the technical scheme of patent of the present invention are directly applied to other occasions, all within the scope of the present invention.
Claims (4)
1. the DBC integrating packaging module for high-power LED chip, it is characterised in that include DBC substrate and described DBC
Lens bracket that substrate is fixedly linked and pass through described lens bracket and the glass lens being connected with described DBC substrate, described DBC
Substrate includes metal level, the ceramic layer covering described metal level and the line layer adjacent with described ceramic layer, on described line layer
Being provided with several LED chip, described lens bracket is provided with several band reflector camera lens installing holes, and described band reflector camera lens is pacified
Dress hole is provided with reflector, and described LED chip position is corresponding with the described position with reflector camera lens installing hole, described glass
Camera lens passes through described reflector and is connected with described LED chip.
2. the DBC integrating packaging module for high-power LED chip according to claim 1, it is characterised in that described gold
Belong to the consistency of thickness of layer and described line layer, and described metal level is copper with the material of described line layer.
3. the DBC integrating packaging module for high-power LED chip according to claim 1, it is characterised in that described pottery
The material of enamel coating is aluminum oxide.
4. the DBC integrating packaging module for high-power LED chip according to claim 1, it is characterised in that described pottery
The material of enamel coating is aluminium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610806896.1A CN106159065A (en) | 2016-09-07 | 2016-09-07 | A kind of DBC integrating packaging module for high-power LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610806896.1A CN106159065A (en) | 2016-09-07 | 2016-09-07 | A kind of DBC integrating packaging module for high-power LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159065A true CN106159065A (en) | 2016-11-23 |
Family
ID=57340744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610806896.1A Pending CN106159065A (en) | 2016-09-07 | 2016-09-07 | A kind of DBC integrating packaging module for high-power LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159065A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845714A (en) * | 2017-10-30 | 2018-03-27 | 深圳市蓝谱里克科技有限公司 | A kind of COB packing forms for high-power LED chip |
| CN108799861A (en) * | 2018-07-13 | 2018-11-13 | 深圳市蓝谱里克科技有限公司 | A kind of LED integrating packaging modules with integral array formula lens |
| WO2020010669A1 (en) * | 2018-07-13 | 2020-01-16 | 深圳市蓝谱里克科技有限公司 | High power led chip back electrode integrated package module with stand |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201708188U (en) * | 2010-07-07 | 2011-01-12 | 四川九洲光电科技股份有限公司 | Ceramic high-power light emitting diode |
| CN201749866U (en) * | 2010-03-09 | 2011-02-16 | 四川柏狮光电技术有限公司 | High-power light-emitting diode |
| CN201910442U (en) * | 2010-10-29 | 2011-07-27 | 华侨大学 | High-power ultraviolet LED (light-emiting diode) component |
| CN102460738A (en) * | 2009-05-20 | 2012-05-16 | 英特曼帝克司公司 | Light emitting device |
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN206059425U (en) * | 2016-09-07 | 2017-03-29 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging modules for high-power LED chip |
-
2016
- 2016-09-07 CN CN201610806896.1A patent/CN106159065A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102460738A (en) * | 2009-05-20 | 2012-05-16 | 英特曼帝克司公司 | Light emitting device |
| CN201749866U (en) * | 2010-03-09 | 2011-02-16 | 四川柏狮光电技术有限公司 | High-power light-emitting diode |
| CN201708188U (en) * | 2010-07-07 | 2011-01-12 | 四川九洲光电科技股份有限公司 | Ceramic high-power light emitting diode |
| CN201910442U (en) * | 2010-10-29 | 2011-07-27 | 华侨大学 | High-power ultraviolet LED (light-emiting diode) component |
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN206059425U (en) * | 2016-09-07 | 2017-03-29 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging modules for high-power LED chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845714A (en) * | 2017-10-30 | 2018-03-27 | 深圳市蓝谱里克科技有限公司 | A kind of COB packing forms for high-power LED chip |
| CN107845714B (en) * | 2017-10-30 | 2020-08-28 | 深圳市蓝谱里克科技有限公司 | COB packaging form for high-power LED chip |
| CN108799861A (en) * | 2018-07-13 | 2018-11-13 | 深圳市蓝谱里克科技有限公司 | A kind of LED integrating packaging modules with integral array formula lens |
| WO2020010669A1 (en) * | 2018-07-13 | 2020-01-16 | 深圳市蓝谱里克科技有限公司 | High power led chip back electrode integrated package module with stand |
| JP2021504975A (en) * | 2018-07-13 | 2021-02-15 | 深▲せん▼市藍譜里克科技有限公司 | Back electrode integrated package module with support frame for high-power LED chip |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161123 |