CN102931321A - Manufacturing method for thin-copper DBC substrate - Google Patents
Manufacturing method for thin-copper DBC substrate Download PDFInfo
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- CN102931321A CN102931321A CN2012104616738A CN201210461673A CN102931321A CN 102931321 A CN102931321 A CN 102931321A CN 2012104616738 A CN2012104616738 A CN 2012104616738A CN 201210461673 A CN201210461673 A CN 201210461673A CN 102931321 A CN102931321 A CN 102931321A
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Abstract
The invention discloses a manufacturing method for a thin-copper DBC (Direct Bonding Copper) substrate. The manufacturing method comprises the following steps: firstly, cleaning a ceramic substrate and a copper sheet by using a cleaning liquid; secondly, oxidizing the copper sheet; and thirdly, sequentially sintering the first copper sheet and the second copper sheet to the ceramic substrate. The thickness of copper is 0.1-0.4mm; and the DBC substrate cannot be used for LED (Light Emitting Diode) products with high power and fine circuits, but the DBC substrate with the thickness of copper being 0.06mm can meet the requirement. According to the manufacturing method for the thin-copper DBC substrate disclosed by the invention, the manufactured thin-copper DBC substrate with the thickness of the copper being 0.06mm is few in sintering bubble and high in yield; the oxidation temperature of the copper sheet is lower than that of thick copper; and when the copper sheet is oxidized, the oxygen content of the copper sheet is higher than the oxidation content of the thick copper.
Description
Technical field
The invention belongs to semiconductor and make LED, optical communication field, relate to semiconductor cooler, power semiconductor, particularly be widely used on the low current element, particularly a kind of manufacture method and manufacture method thereof of thin copper DBC substrate.
Background technology
LED is widely used at present is DPC substrate technology, namely utilizes direct coating technology, book copper below 0.06 millimeter is deposited on Al2O3 ceramics top layer, to satisfy the meticulous requirement of LED product circuit.The characteristics of DPC substrate are coating books but bond strength is low, along with LED to high-power, low current development, the DPC substrate can't meet the demands.The direct copper-clad base plate of ceramic substrate (DBC substrate) because of have good mechanical performance, fabulous electrical insulation capability begins to be applied to gradually the LED product.For the DBC substrate, ripe technique is 0.1 millimeter～0.4 millimeter thick copper now, but it can not be directly used in the LED product, needs employing special processing mode could be used below copper layer thickness is thinned to 60 μ m, complex procedures, cost is high, copper layer thickness is inhomogeneous, and properties of product are impacted.And cover copper below 0.1 millimeter, and present technique sintering bubble is many, and yields is low.
Summary of the invention
The object of the present invention is to provide a kind of direct making copper thick is 0.06 millimeter DBC substrate, does not follow-uply need to carry out processing again, is directly used in the LED product, manufacture method and the manufacture method thereof of the thin copper DBC substrate that the product yields is high.
For solving the problems of the technologies described above, the manufacture method of the thin copper DBC of the present invention substrate comprises the steps: the first step, with cleaning fluid ceramic substrate and copper sheet is cleaned; Second step carries out oxidation to copper sheet; In the 3rd step, the first copper sheet, the second copper sheet are sintered on the ceramic substrate successively.
Described cleaning fluid is acid-base solution or deionized water.The oxidizing temperature of described the first copper sheet and described the second copper sheet is 500 ℃～900 ℃, and oxidization time is 10min～30min, and oxidizing atmosphere is the oxidizing atmosphere under the nitrogen protection, and wherein oxygen content is 50ppm～3000ppm.The sintering temperature of described the first copper sheet is 1060 ℃～1075 ℃, and sintering time is 20min～35min, and atmosphere is the oxidizing atmosphere of nitrogen protection, and wherein oxygen content is 5ppm～40ppm.The sintering temperature of described the second copper sheet is 1065 ℃～1080 ℃, and sintering time is 20min～35min, and atmosphere is the oxidizing atmosphere of nitrogen protection, and wherein oxygen content is 5ppm～40ppm.The thickness of described the first copper sheet and described the second copper sheet is 0.06mm.The thickness of described ceramic substrate is 0.25mm.
Thick 0.1 millimeter～0.4 millimeter DBC substrate of copper can not be used for high power, fine lines paths of LEDs product.And the thick 0.06 millimeter DBC substrate of copper can satisfy this requirement.0.06 millimeter book copper DBC substrate sintering bubble that the manufacture method of the thin copper DBC of the present invention substrate is made is few, and yields is high; The copper sheet oxidizing temperature is lower than thick copper oxidizing temperature; Oxygen content was high when oxygen content was than thick copper oxidation during the copper sheet oxidation.
Description of drawings
Description of reference numerals in the manufacture method accompanying drawing of the thin copper DBC of the present invention substrate:
1-ceramic substrate 2-the first copper sheet 3-the second copper sheet
Embodiment
The manufacture method of the thin copper DBC of the present invention substrate; selecting thickness is the copper sheet of 0.06mm and the ceramic substrate 1 that thickness is 0.25mm; processing comprises the steps: at first to use acid-base solution; deionized water; by ultrasonic cleaning; spray; the techniques such as predrainage are to copper sheet; the impurity that cleans the removal material surface of ceramic substrate 1; then with thermal oxidation technology to oxidation technology; make copper sheet Surface Creation certain thickness cuprous oxide; oxidizing temperature is set as 500 ℃～900 ℃; oxidization time is oxidized to 10min～25min; oxidizing atmosphere is the oxidizing atmosphere under the nitrogen protection, and oxygen content is 500ppm～3000ppm.
The first copper sheet 2 is placed on carries out the first surface sintering on the ceramic substrate 1, Temperature Setting is 1060 ℃～1075 ℃, and sintering time is 20min～35min.Atmosphere is the oxidizing atmosphere of nitrogen protection, and oxygen content is 5ppm～40ppm.At another side sintering second copper sheet 3 of ceramic substrate 1, Temperature Setting is 1065 ℃～1080 ℃ after finishing, and sintering time is 20min～35min, and atmosphere is the oxidizing atmosphere of nitrogen protection, and oxygen content is 5ppm～40ppm.
Below the preferred embodiment of the invention is specified, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification that is equal to or replacement under the prerequisite of the invention spirit, the modification that these are equal to or replacement all are included in the application's claim limited range.
Claims (7)
1. the manufacture method of thin copper DBC substrate comprises the steps:
The first step is cleaned ceramic substrate and copper sheet with cleaning fluid;
Second step carries out oxidation to copper sheet;
In the 3rd step, the first copper sheet, the second copper sheet are sintered on the ceramic substrate successively.
2. the manufacture method of thin copper DBC substrate according to claim 1 is characterized in that, described cleaning fluid is acid-base solution or deionized water.
3. the manufacture method of thin copper DBC substrate according to claim 1; it is characterized in that; the oxidizing temperature of described the first copper sheet and described the second copper sheet is 500 ℃～900 ℃; oxidization time is 10min～30min; oxidizing atmosphere is the oxidizing atmosphere under the nitrogen protection, and wherein oxygen content is 50ppm～3000ppm.
4. the manufacture method of thin copper DBC substrate according to claim 1; it is characterized in that, the sintering temperature of described the first copper sheet is 1060 ℃～1075 ℃, and sintering time is 20min～35min; atmosphere is the oxidizing atmosphere of nitrogen protection, and wherein oxygen content is 5ppm～40ppm.
5. the manufacture method of thin copper DBC substrate according to claim 1; it is characterized in that, the sintering temperature of described the second copper sheet is 1065 ℃～1080 ℃, and sintering time is 20min～35min; atmosphere is the oxidizing atmosphere of nitrogen protection, and wherein oxygen content is 5ppm～40ppm.
6. the manufacture method of thin copper DBC substrate according to claim 1 is characterized in that, the thickness of described the first copper sheet and described the second copper sheet is 0.06mm.
7. the manufacture method of thin copper DBC substrate according to claim 1 is characterized in that, the thickness of described ceramic substrate is 0.25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012104616738A CN102931321A (en) | 2012-11-16 | 2012-11-16 | Manufacturing method for thin-copper DBC substrate |
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| CN2012104616738A CN102931321A (en) | 2012-11-16 | 2012-11-16 | Manufacturing method for thin-copper DBC substrate |
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| CN102931321A true CN102931321A (en) | 2013-02-13 |
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| CN2012104616738A Pending CN102931321A (en) | 2012-11-16 | 2012-11-16 | Manufacturing method for thin-copper DBC substrate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702588A (en) * | 2014-11-24 | 2016-06-22 | 上海申和热磁电子有限公司 | Thickened DBC (direct bonded copper) substrate manufacturing method and DBC (direct bonded copper) substrate manufactured using same |
| CN105753495A (en) * | 2016-01-26 | 2016-07-13 | 深圳市柳鑫实业股份有限公司 | Copper foil pre-oxidizing method for firing ceramic substrates |
| CN106159065A (en) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging module for high-power LED chip |
| CN106927850A (en) * | 2015-12-29 | 2017-07-07 | 上海申和热磁电子有限公司 | A kind of preparation method of double-sided copper-clad ceramic substrate |
| CN107819066A (en) * | 2017-10-26 | 2018-03-20 | 成都万士达瓷业有限公司 | A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates |
| CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
| CN115107324A (en) * | 2022-07-19 | 2022-09-27 | 江苏富乐华半导体科技股份有限公司 | Method for increasing DCB copper thickness |
| CN116037746A (en) * | 2023-02-01 | 2023-05-02 | 江苏富乐华半导体科技股份有限公司 | Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet |
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| CN101049056A (en) * | 2004-10-27 | 2007-10-03 | 库拉米克电子学有限公司 | Method for the production of a metal-ceramic substrate or copper-ceramic substrate, and support to be used in said method |
| CN101439983A (en) * | 2007-11-19 | 2009-05-27 | 段维新 | Method for manufacturing ceramic / metal composite structure |
| CN101483217A (en) * | 2009-02-04 | 2009-07-15 | 宋立峰 | LED high heat conduction ceramic copper coating heat radiation circuit board |
| CN102569213A (en) * | 2012-03-04 | 2012-07-11 | 浙江大学 | DBC board insulation structure |
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- 2012-11-16 CN CN2012104616738A patent/CN102931321A/en active Pending
Patent Citations (4)
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| CN101049056A (en) * | 2004-10-27 | 2007-10-03 | 库拉米克电子学有限公司 | Method for the production of a metal-ceramic substrate or copper-ceramic substrate, and support to be used in said method |
| CN101439983A (en) * | 2007-11-19 | 2009-05-27 | 段维新 | Method for manufacturing ceramic / metal composite structure |
| CN101483217A (en) * | 2009-02-04 | 2009-07-15 | 宋立峰 | LED high heat conduction ceramic copper coating heat radiation circuit board |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702588A (en) * | 2014-11-24 | 2016-06-22 | 上海申和热磁电子有限公司 | Thickened DBC (direct bonded copper) substrate manufacturing method and DBC (direct bonded copper) substrate manufactured using same |
| CN106927850A (en) * | 2015-12-29 | 2017-07-07 | 上海申和热磁电子有限公司 | A kind of preparation method of double-sided copper-clad ceramic substrate |
| CN105753495A (en) * | 2016-01-26 | 2016-07-13 | 深圳市柳鑫实业股份有限公司 | Copper foil pre-oxidizing method for firing ceramic substrates |
| CN105753495B (en) * | 2016-01-26 | 2018-07-06 | 深圳市柳鑫实业股份有限公司 | A kind of ceramic substrate is fired with copper foil method for pre-oxidizing |
| CN106159065A (en) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | A kind of DBC integrating packaging module for high-power LED chip |
| CN107819066A (en) * | 2017-10-26 | 2018-03-20 | 成都万士达瓷业有限公司 | A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates |
| CN107819066B (en) * | 2017-10-26 | 2018-10-16 | 成都万士达瓷业有限公司 | A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates |
| CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
| CN115107324A (en) * | 2022-07-19 | 2022-09-27 | 江苏富乐华半导体科技股份有限公司 | Method for increasing DCB copper thickness |
| CN116037746A (en) * | 2023-02-01 | 2023-05-02 | 江苏富乐华半导体科技股份有限公司 | Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet |
| CN116037746B (en) * | 2023-02-01 | 2024-01-26 | 江苏富乐华半导体科技股份有限公司 | Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet |
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Application publication date: 20130213 |