CN205828418U - LED encapsulation structure - Google Patents
LED encapsulation structure Download PDFInfo
- Publication number
- CN205828418U CN205828418U CN201320636156.XU CN201320636156U CN205828418U CN 205828418 U CN205828418 U CN 205828418U CN 201320636156 U CN201320636156 U CN 201320636156U CN 205828418 U CN205828418 U CN 205828418U
- Authority
- CN
- China
- Prior art keywords
- substrate
- led chip
- enclosure wall
- encapsulation structure
- accommodation space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
This application discloses a kind of LED encapsulation structure, including substrate, enclosure wall and LED chip, it is characterised in that: the accommodation space that described enclosure wall is formed around described substrate, and described LED chip is arranged in the described accommodation space on described substrate；Described LED chip uses die bond bonding wire mode to be arranged on described substrate, and described substrate is sheffield plate；Described enclosure wall uses glass material；The through hole for characterizing polarity of electrode is offered on described substrate；Described accommodation space is positioned at around described LED chip and is filled with fluorescent glue, form LED encapsulation structure.Owing to glass material has relatively low thermal coefficient of expansion, thus therefore device will not occur bigger expansion to have influence on device work, simultaneously because glass is transparent material, so the light extraction efficiency of meeting boost device.
Description
Technical field
The application relates to light emitting diode field, particularly relates to a kind of LED encapsulation structure.
Background technology
Light emitting diode (Light Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous, permissible
Convert electrical energy into luminous energy output.Owing to its brightness, illuminance are relatively strong, and the reason that power consumption is little, it is widely used in illumination, shows
The field such as show.
Existing LED encapsulation structure is usually and LED chip is fixed on substrate by welding manner, it is achieved LED chip
And the electrical connection between base plate line, and around LED chip, bag sets fluorescent glue, so that the luminous efficacy of LED
Realize optimizing.But, owing to LED encapsulation structure typically uses material based on thermosets, as epoxy plastics, phenolic aldehyde are moulded
Material etc., it has higher thermal coefficient of expansion, easily affects the normal work of device, and light extraction efficiency is low.
Summary of the invention
The application provides a kind of LED encapsulation structure, to ensure proper device operation and to improve light extraction efficiency.
The application provides a kind of LED encapsulation structure, and including substrate, enclosure wall and LED chip, described enclosure wall is in described substrate week
Enclose an accommodation space of formation, and described LED chip is arranged in the described accommodation space on described substrate；Described LED core
Sheet uses die bond bonding wire mode to be arranged on described substrate, and described substrate is sheffield plate；Described enclosure wall uses glass material；Institute
State the through hole offered on substrate for characterizing polarity of electrode；Described accommodation space is positioned at around described LED chip and is filled with
Fluorescent glue, forms LED encapsulation structure.
The application provides the benefit that:
By providing a kind of LED encapsulation structure, including: substrate, it is formed at this substrate and houses forming one about or over
The enclosure wall in space, and it is arranged at the LED chip in the described accommodation space on described substrate, described enclosure wall uses glass material
Material.Owing to glass material has relatively low thermal coefficient of expansion, thus therefore device will not occur bigger expansion to have influence on device
Part works, simultaneously because glass is transparent material, so the light extraction efficiency of meeting boost device.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the LED encapsulation structure of the embodiment of the present application one.
Detailed description of the invention
Combine accompanying drawing below by detailed description of the invention the application is described in further detail.
Embodiment one:
Refer to Fig. 1, the LED encapsulation structure of the present embodiment specifically includes that substrate 1, is formed at this substrate 1 about or over
(being illustrated as the situation that enclosure wall is formed at around substrate) is to form the enclosure wall 3 of an accommodation space, and is arranged at the appearance on substrate 1
LED chip 4 in being empty.Enclosure wall 3 uses glass material, owing to glass material has a relatively low thermal coefficient of expansion, thus device
Therefore part will not occur bigger expansion to have influence on device work, and owing to glass is transparent material, that understands boost device goes out light
Efficiency.Further, since glass preparation and cost low cost compared with other material so that LED encapsulation structure holistic cost obtains
To reducing.LED chip 4 uses die bond bonding wire mode to be arranged on substrate 1.And substrate 1 is sheffield plate, owing to silver also has with copper
There is good heat conductivility, enhance the heat dispersion of whole LED encapsulation structure.Accommodation space is positioned at around LED chip 4 and fills out
It is filled with fluorescent glue 2.And on substrate 1, offer the through hole 11 for characterizing polarity of electrode.
Below the manufacture process of above-mentioned LED encapsulation structure is illustrated:
First, sheffield plate is prepared as substrate；
Secondly, use sol-gel process to prepare glass material, specifically, first use solution colloidal sol, after dry at low temperatures
Roasting (200-250 DEG C/70-80h) makes solution form gel, then carries out baking-curing formation glass material；
Then, by glass material molding on sheffield plate, form enclosure wall；
Finally, by LED chip die bond bonding wire to sheffield plate, fill fluorescent glue, form LED encapsulation structure.
Embodiment two:
The present embodiment essentially consists in above-described embodiment difference: enclosure wall 3 is thermosets, i.e. epoxy resin or PPA material
Material.
Above-mentioned LED encapsulation structure may be used in the products such as various lighting, LED television.
Above content is to combine the further description that the application is made by specific embodiment, it is impossible to assert this Shen
Being embodied as please is confined to these explanations.For the application person of an ordinary skill in the technical field, do not taking off
On the premise of the application conceives, it is also possible to make some simple deduction or replace.
Claims (1)
1. a LED encapsulation structure, including substrate, enclosure wall and LED chip, it is characterised in that: described enclosure wall is in described substrate week
Enclose an accommodation space of formation, and described LED chip is arranged in the described accommodation space on described substrate；Described LED core
Sheet uses die bond bonding wire mode to be arranged on described substrate, and described substrate is sheffield plate；Described enclosure wall uses glass material；Institute
State the through hole offered on substrate for characterizing polarity of electrode；Described accommodation space is positioned at around described LED chip and is filled with
Fluorescent glue, forms LED encapsulation structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320636156.XU CN205828418U (en) | 2013-10-15 | 2013-10-15 | LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320636156.XU CN205828418U (en) | 2013-10-15 | 2013-10-15 | LED encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205828418U true CN205828418U (en) | 2016-12-21 |
Family
ID=58147315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320636156.XU Expired - Fee Related CN205828418U (en) | 2013-10-15 | 2013-10-15 | LED encapsulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205828418U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784242A (en) * | 2016-12-27 | 2017-05-31 | 佛山市国星光电股份有限公司 | The method of LED component, LED and processing LED component conduction bonding wire |
-
2013
- 2013-10-15 CN CN201320636156.XU patent/CN205828418U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784242A (en) * | 2016-12-27 | 2017-05-31 | 佛山市国星光电股份有限公司 | The method of LED component, LED and processing LED component conduction bonding wire |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171012 Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park Patentee after: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD. Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 South Road community should be one stone Wentao Science Park building B Patentee before: Lighting Optoectronic(SZ) Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161221 Termination date: 20191015 |