CN110416382A - The packaging method of LED light source - Google Patents
The packaging method of LED light source Download PDFInfo
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- CN110416382A CN110416382A CN201811354358.9A CN201811354358A CN110416382A CN 110416382 A CN110416382 A CN 110416382A CN 201811354358 A CN201811354358 A CN 201811354358A CN 110416382 A CN110416382 A CN 110416382A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The present invention provides a kind of packaging method of LED light source, comprising: includes the EMC bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis；The rack surface has heat sink for die bond, and LED chip is fixed on heat sink on piece；Electrode metal piece is equipped with heat sink two sides；Two electrodes of LED chip are connected respectively to the electrode metal piece of two sides by lead；LED chip is dislocatedly distributed in the heat sink on piece；The two sides of each LED chip in the heat sink transverse direction, there are wide regions and narrow region, wherein being equipped with insulating layer on wide region；Wherein heat sink and electrode metal piece are copper sheet, they are embedded on EMC matrix；In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；Then bonding wire makes two electrodes of chip be connected respectively to the electrode metal on piece of its two sides by lead；The glue containing fluorescent powder is got up chip package again.
Description
Present patent application is the division of following patent:
Number of patent application: 201510430282.3
Title: the EMC metal bonding device and packaging method of distributed III group-III nitride emitting semiconductor
The applying date: on July 21st, 2015
Technical field
The present invention relates to a kind of encapsulation technologies of LED light emitting device.
Background technique
Ceramic substrate has the characteristics that cost is lower, air-tightness is good, high reliablity relative to metal substrate, and its
With excellent thermal conductivity.The material of the ceramic substrate generallyd use at present is Al2O3Or Al2O3+SiO2.Ceramic substrate is universal
In using the high power LED device of CSP technology, the system integration can be greatly lowered in the LED of these high density grades
Cost, while meeting the power requirement of high power device.The integrated technology of small-size chips, most apparent advantage be reduce at
This, simultaneously as the electric current for flowing through small-size chips is smaller, internal junction temperature is also lower, and is easy to control, the stabilization of chip
Property larger size chip is higher.It is a hot spot of current technology development using the CSP technology that COB is encapsulated.But eutectic is made pottery
Porcelain matrix technique all rests in always in America and Japan and the big factory's hand of TaiWan, China, such as TaiWan, China is with glad, critical materials
Techno-absence causes the situation for relying on import that cannot solve for a long time, and continent encapsulates enterprise and lacks right of speech, causes continent producer
It is on a sticky wicket in price negotiation, in recent years, although the prices rapid decrease such as fluorescent powder, silica gel, crucial LED
Chip and ceramic substrate but steadfastly stand on one's ground always, and the price of packaging is constantly declining, and cause the profit of continent enterprise
It cannot be guaranteed, manage and development is hindered, be unfavorable for the benign cycle of continent enterprise and promote global competitiveness.
EMC solution in emergence.EMC full name in English Epoxy Molding Compound (epoxy resin film modeling
Material, also known as thermosetting epoxy resin), it is to use new Epoxy material and etching technique under the encapsulation of Molding equipment
A kind of frame form of Highgrade integration.
LED lighting technology develops today, by the simple pursuit technical indicator lm/w of early stage, pursuit cost performance till now
The strong variation in prices of lm/ $, eutectic ceramic substrate close industry development trend.Promote lm/ $ and finally show two o'clock: first is
The current density that LED chip is able to bear is promoted, the luminous flux of single packaging body is promoted and solves chip under high current use
The problem of efficiency declines；Second is to reduce encapsulation volume, reduces the Material Cost and manufacturing cost of encapsulation.
The variation of material caused by EMC technology and structure makes packaging have high heat resistance, anti-UV, highly integrated, logical
High current, it is small in size the features such as.The technology is under the premise of LED requires cost that is highly integrated, reducing light, high reliability, quilt
It developed, the feature with IC industry.
EMC encapsulation technology is usually to carry out welding brilliant solidus on EMC bracket at present, and each bracket is respectively independent, size ruler
Very little the same, therefore, which determine its power is essentially identical.This structure can not more be actually needed to supporting plate (bracket battle array
Column) carry out power shearing adjustment.
Summary of the invention
For overcome the deficiencies in the prior art, first technical problem to be solved by this invention is to provide a kind of distribution
The EMC metal bonding device of III group-III nitride emitting semiconductor of formula, the power that can according to need, to packaged bracket
Plate is sheared, and has good thermal diffusivity.
Other technical problems to be solved by this invention are to propose the packaging method of LED light source, be may be implemented according to need
The power wanted shears packaged supporting plate, and bracket has good thermal diffusivity.
In order to solve the first technical problem mentioned above, the technical solution adopted in the present invention is as follows:
A kind of EMC metal bonding device of distributed III group-III nitride emitting semiconductor, including EMC bracket, the bracket
There is heat sink for die bond on surface, and LED chip is fixed on heat sink on piece；Electrode metal piece is equipped with heat sink two sides；LED
Two electrodes of chip are connected respectively to the electrode metal piece of two sides by lead.The electrode metal piece of all LED chips is arranged
Heat sink two sides.Heat sink is preferably copper sheet or sheffield plate.
Preferably: LED chip is dislocatedly distributed in the heat sink on piece.Be dislocatedly distributed the consolidating of chip in heat sink on piece
Positioning, when chip is fixed thereon, discrete distribution is presented in heat source, compares lineal layout, heat dissipation effect is more preferable, avoids
The problem of chip mutually sends out interference thermogenetic and local accumulated heat.
Preferably: the two sides of each LED chip in the heat sink transverse direction, there are wide regions and narrow area
Domain, wherein being equipped with insulating layer on wide region.Since chip presentation is dislocatedly distributed, cause chip in heat sink on piece in off-axis (In
In the case that heat sink is rectangle or other symmetric figures) distribution, so when crossing over wide region compared with long lead, in a few cases
Under, heat sink can be touched, if heat sink will lead to heat sink electrification without insulation processing, and then is caused to chip
Potential safety and quality hazards.Insulating layer can be silica gel, epoxy resin or UV colloid etc..Insulating layer is generally using after spraying up
Carry out curing process.
Preferably: the two sides of each LED chip in the heat sink transverse direction, there are wide regions and narrow area
Domain；The electrode metal piece positioned at heat sink two sides, wherein the area for being located at the first electrode sheet metal of narrow region side is
S, the area positioned at the second electrode sheet metal of wide region side are that m, s and m meet following relationship: s > m.In narrow region side
First electrode sheet metal relative to the second electrode sheet metal in wide region, the heat that is issued closer to chip, chip
Amount, can be conducted, further, the lead end position being welded thereon is most outward by greater area of first electrode sheet metal
The excellent symmetrical centre in first electrode sheet metal.
Preferably: wherein the lateral length ratio in the narrow region and wide region is 1:3；The s and m meet following relationship:
S:m=3:1.Such radiator structure keeps the heat dissipation area of chip two sides just equal, and heat dissipation is more evenly.Such ratio can
So that heat sink is just right with the distribution of electrode metal piece, the reasonable wide of entire bracket, radiating efficiency and scantling control
System combines, and convenient for heat sink and the processing of electrode metal piece.
Preferably: being equipped with guide groove on the first electrode sheet metal, be fixed on the first electrode sheet metal
A part of lead is placed in guide groove, and the trend of guide groove is towards chip direction.Lead is placed in solid by dispensing in guide groove
It is fixed.Lead interpenetrates with guide groove metal in order to prevent, and then increases resistance, can be sprayed on the surface of guide groove
Graphite linings or graphene layer processing, then carry out dispensing processing again after lead is placed in guide groove.Due to broader first electricity
The lead solder-joint of pole sheet metal position at its center, so wire length is also longer, in a few cases, lead can sealed
In the case where glue, due to external force, can occur to fall to two lateral deviations, partially sidewise lead can make electrode metal piece with it is heat sink
Piece is electrically connected, and then makes heat sink conduction；In order to avoid such case, increasing guide groove can be with the guidance lead of maximum possible
Situation is not occurred to fall partially.Further, first electrode sheet metal is thicker than the side far from heat sink close to heat sink side,
Shelving is presented in cross section, and this structure keeps close its heat transfer efficiency of one end of chip higher, and then improves heat dissipation.
Preferably: LED chip includes the first chip and the second chip for light modulation；Wherein it is coated on the second chip
Two Colour Fluorescence bisque, Two Colour Fluorescence bisque are red light fluorescent powder and yellow fluorescent powder mixed fluorescent powder colloid；And first chip with
Second chip is discontinuously arranged.White light LEDs are usually to send out white light by blue chip combination yellow fluorescent powder.The present invention
Using the double-deck phosphor technologies, i.e., Two Colour Fluorescence powder is coated on a part of blue chip, then again in its one layer of Huang of outer setting
Emitting phosphor.The double-colored light source of this toning, colour temperature is partially warm, there is the main wave of obvious feux rouges.Double-colored light source does not pass through with other
The chip (monochromatic source) of Two Colour Fluorescence powder encapsulation is spaced setting, or is only set to the heat sink on piece at device heat sink both ends.
Double-colored light source and monochromatic source can be separately connected control switch circuit, realize switch control respectively.When needing colour temperature colder
When, the switch of double-colored light source is closed, starts the LED of double-colored light source not；When needing colour temperature partially warm, double-colored light source is opened
Switch.In one embodiment, double-colored light source and monochromatic source are exported with two of a LED controller side by side connects；It removes
It other than this, double-colored light source can also be individually for sets a manual switch being controlled, the manual switch and LED drive circuit connect
It connects, and then controls the switch motion of double-colored light source by LED drive circuit.
The present invention also proposes the packaging method of above-mentioned apparatus:
A kind of packaging method of LED light source, comprising:
It include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, wherein heat sink and electrode metal piece
For copper sheet, they are embedded on EMC matrix；The rack surface has described heat sink for die bond, sets heat sink two sides
There is electrode metal piece；Heat sink extends to both ends to realize end cut.
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire makes two electrodes of chip be connected respectively to the electrode metal on piece of its two sides by lead；
The glue containing fluorescent powder is got up chip package again.
The present invention also proposes the packaging method of second of LED light source comprising:
Include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, the bracket includes following characteristics:
The heat sink on piece is equipped with the LED chip fixed bit being dislocatedly distributed；Each LED core in the heat sink transverse direction
The two sides of piece fixed bit, there are wide regions and narrow region；The electrode metal piece positioned at heat sink two sides, wherein being located at narrow
The area of the first electrode sheet metal of region side is s, and the area positioned at the second electrode sheet metal of wide region side is m, s
Meet following relationship with m: s > m；It is equipped with guide groove on the first electrode sheet metal, when being fixed with lead, is fixed on described
A part of lead on first electrode sheet metal is placed in guide groove, and the trend of guide groove is towards chip direction.
Wherein heat sink and electrode metal piece are copper sheet, they are embedded on EMC matrix, wherein in the first electrode
Sheet metal is the electrode metal piece equipped with the guide groove；Then the insulating layer is made；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire, wherein the one end of first lead is fixed on first electrode sheet metal central area, first
A part of lead is limited in the guide groove, and then the other end is fastened on the electrode of chip；
Sealing solidification is carried out again.
The present invention proposes the packaging method of the third LED light source, comprising:
It include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, the rack surface has for die bond
Described heat sink, heat sink two sides be equipped with electrode metal piece；Heat sink extends to both ends to realize end cut；Wherein
Heat sink is copper sheet with electrode metal piece, they are embedded on EMC matrix；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；Then bonding wire passes through two electrodes of chip
Lead is connected respectively to the electrode metal on piece of its two sides；
The coating of Two Colour Fluorescence powder is carried out to the second chip；Wherein Two Colour Fluorescence bisque is that red light fluorescent powder and yellow light are glimmering
Light powder mixed fluorescent powder colloid, LED chip include the first chip and the second chip for light modulation, and the first chip and second
Chip is discontinuously arranged；
The glue containing yellow fluorescent powder is got up all chip packages again.
The present invention proposes a kind of control method of LED packaging comprising:
To the first chip and in the EMC metal bonding device of distributed III group-III nitride emitting semiconductor above-mentioned
Two chips carry out power control respectively, and the brightness of chip is controlled by the input current to chip, and the chip of different brightness swashs
The difference of the fluorescent powder degree of hair and generate different colors, the color of the sending of the first chip and the second chip is combined into not
Same color.Since the first chip and the second chip can issue different colors under power controller control, their group
Conjunction can then issue increasingly complex different colours.
Compared with prior art, the beneficial effects of the present invention are:
The present invention use EMC bracket, in sheet metal (such as copper sheet or sheffield plate etc.) be skeleton.Wherein propping up
Frame surface is located in the middle heat sink, sets up electrode metal piece separately on heat sink both sides, and heat sink extends to both ends into strips,
Then the electrode metal piece of its two sides is also distributed therewith.This structure can be easily achieved clipping function.In the core of heat sink on piece
After piece completes encapsulation, it can need to carry out cutting cutting to packaging according to power.The present invention is realized in chip package
The function that level can be cut on demand, and due to using the heat sink chip architecture of EMC material and center, it is aided with electrode gold
The distribution for belonging to piece can be very good to give the certain hardness of packaging and radiating efficiency, and structure is very easy to realize module
Change, in the case where power customization, by way of shearing, is quickly customized the production of power device.Compared to square matrix formula
Supporting plate, supporting plate of the invention are strip, and shearing is free, since square matrix formula carrier unit is not present in the chip between adjacent
Between standalone case, it is of the invention it is heat sink be an entirety, so the series-parallel design between chip is also more flexible.
Detailed description of the invention
Fig. 1 is a schematic structural view of Embodiment 1 of the present invention.
Fig. 2 is the structural schematic diagram of the embodiment of the present invention 2.
Fig. 3 is the comparison figure of electrode metal piece.
Fig. 4 is the diagrammatic cross-section of embodiment 2.
Fig. 5 is the structural schematic diagram of embodiment 3.
Fig. 6 is the schematic diagram of the section structure of embodiment 3.
Fig. 7-Fig. 9 is the schematic diagram of the encapsulation step of embodiment 4.Fig. 7 is to set foxing, and Fig. 8 is to dust, and Fig. 9 is to remove to enclose
Item.
Figure 10 is the final effect schematic diagram of embodiment 4.
Figure 11 is the effect diagram of embodiment 3.
Figure 12 is the schematic diagram of second of foxing structure.
Figure 13 is circuit diagram.
Identifier declaration in figure:
1, chip；2, lead；3, electrode metal piece；4, bracket；5, heat sink sheet metal；6, chip；7, first electrode metal
Piece；8, first lead；9, guide groove；10, insulating layer；11, second electrode sheet metal；12, the second lead；13, narrow region；14,
Wide region；15, reference electrode sheet metal；16, sealing；17, EMC bracket；70, thick end；20, the first chip；21, the second chip；
23, second switch；24, first switch；25, the second LED driver；26, the first LED driver；27, Two Colour Fluorescence bisque；
28, L shape foxing；29, foxing；30, it dusts region；31, double-colored arogel layer.
Specific embodiment
The invention discloses a kind of EMC metal bonding devices of distributed III group-III nitride emitting semiconductor, including EMC
Bracket, the rack surface have heat sink for die bond, and LED chip is fixed on heat sink on piece；Electricity is equipped with heat sink two sides
Pole sheet metal；Two electrodes of LED chip are connected respectively to the electrode metal piece of two sides by lead.
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Firstly, luminescence chip of the present invention is III group-III nitride emitting semiconductor, it is in general sending blue light
Gallium nitride base indium-gallium-aluminum-nitrogen illuminator, substrate are generally sapphire, which provides a kind of bipolar electrode chip structure.For
Other III group-III nitrides, such as GaAs base, in the application of non-white optical illumination, the technical solution of aforementioned present invention is also suitable.
Thus forwards, other than the blue light nitride light-emitting semiconductor of white light technology, feux rouges, green light, yellow light, laser, ultraviolet light etc. are equal
Technical solution suitable for aforementioned present invention.The technology of EMC and metal bonding production bracket are a kind of lower cost LED encapsulation
Technology.Their juncture and structure has a major impact the thermally conductive and conductive of packaging, in order to reach good effect
The safety and reliability of LED product is realized and improved to fruit on EMC metal joining technique.In the safety for solving device
Under the premise of property and reliability, need further to consider the simplification of its production technology and some other demands of client.City
Field claims to the convenience and operability of the power customization of device, and designer is based on the demand, deducts a percentage of the invention
Technical solution.The technical solution that the present invention is further explained by the following examples.
The present invention is equipped with one that is, on bracket and is located in the middle main body using Distributed die arrangement mode
Heat sink, thereon, the electrode metal piece of all LED chips is arranged in heat sink two sides to chip die bond.Heat sink is preferably copper
Piece or sheffield plate.
Embodiment one shown in Figure 1, the upper surface of bracket 4 have heat sink 5, are placed with electrode gold heat sink 5 two sides
Belong to piece 3.Chip 1 is fixed on heat sink 5, and chip 1 is connected on the electrode metal piece 3 on both sides by the lead 2 on both sides.By
This structure, it will be seen that the circuit connecting relation between each chip is in parallel.It connects, then needs if necessary to them
Electrode metal piece rationally to be concatenated by conducting wire.Eight electrode foots, the structure of four chips are shown in Fig. 1, practical
On, this structure can extend to both ends, form the non-individual body of multi-electrode foot.The maximum advantage of non-individual body be can be convenient into
Row truncation thus can carry out shear treatment according to the power demand of product.Heat sink positioned at main body section is used for admittedly
Crystalline substance can efficiently export chip heat very much, and electrode metal piece can disperse the heat to be come by leading conductive in time,
And then reduce the accumulated heat of chip.
Second embodiment of the invention is referring to fig. 2 and shown in Fig. 4.Compared to the structure of embodiment 1, the core of the present embodiment
Piece 6 is dislocatedly distributed in heat sink on piece.Be dislocatedly distributed the fixed bit of chip in heat sink on piece, when chip is fixed thereon
Wait, discrete distribution is presented in heat source, compares lineal layout, and heat dissipation effect is more preferable, avoid chip mutually send out interference thermogenetic and
The problem of local accumulated heat.The two sides of each LED chip in heat sink transverse direction, there are wide region 14 and narrow regions
13, wherein being equipped with insulating layer 10 on wide region.Since chip presentation is dislocatedly distributed, cause chip in heat sink on piece in off-axis
(in the case where being rectangle or other symmetric figures for heat sink) distribution, so when crossing over wide region compared with long lead, in a small number of feelings
Under condition, heat sink can be touched, if heat sink will lead to heat sink electrification without insulation processing, and then gives chip
Cause potential safety and quality hazards.Insulating layer can be silica gel, epoxy resin or UV colloid etc..Insulating layer is generally using in spraying
Curing process is carried out after going, and can also use pad pasting mode.In one embodiment, insulating layer is solidification fluorescent powder film,
It is covered on wide region；In an improved embodiment, fluorescent powder film is the mixing of red fluorescence powder and yellow fluorescent powder
Arogel piece, such film are used directly for adjusting colour temperature；In another embodiment, insulating layer is mirror film, reflective
Layer is located at the bottom of mirror film, and connects with heat sink.Mixed powder film can fry batter in a thin layer in advance, be then cut into
Then small pieces are pasted onto heat sink on piece.The available more preferable Two Colour Fluorescence powder powder piece more evenly of this structure.If using
The way of spraying Two Colour Fluorescence arogel may have that fluorescent powder is unevenly distributed when solidifying phosphor gel,
Printing technology can be using the technique of spraying.Using printing technology, then various patterns can be presented in insulating layer.
In another embodiment, positioned at the electrode metal piece of heat sink two sides, wherein being located at the first of narrow region side
The area of electrode metal piece 7 be s, positioned at wide region side second electrode sheet metal 11 area be m, s and m meet it is following
Relationship: s > m.Narrow region side first electrode sheet metal 7 relative to the second electrode sheet metal 11 in wide region, more
The heat issued close to chip, chip, can be conducted outward by greater area of first electrode sheet metal, further, weldering
Connect the optimal symmetrical centre in first electrode sheet metal of lead end position on it.In one more preferably embodiment,
Described in the lateral length ratio in narrow region and wide region be 1:3；S and m meet following relationship: s:m=3:1.Referring to Fig. 3, two
The area of reference electrode sheet metal 15 be equal to a first electrode sheet metal 7 and second electrode sheet metal 11 area and.In this way
Radiator structure, keep the heat dissipation area of chip two sides just equal, heat dissipation more evenly.Such ratio can make heat sink with
The distribution of electrode metal piece is just right, the reasonable wide of entire bracket, and radiating efficiency is combined with scantling control,
And convenient for heat sink and the processing of electrode metal piece.In a preferred embodiment: being equipped on first electrode sheet metal 7
Guide groove 9, guide groove 9 are thick end 70 towards one end of chip, and thick end 70 facilitates the heat for conducting chip closer to chip
Amount.The a part for the lead being fixed on first electrode sheet metal is placed in guide groove 9, and the trend of guide groove 9 is towards chip side
To.First lead 8 is placed in guide groove and is fixed by dispensing.First lead 8 is seeped mutually with 9 metal of guide groove in order to prevent
Thoroughly, and then increase resistance, spraying graphite layer or graphene layer processing can be carried out on the surface of guide groove, then be set in lead
Carry out dispensing processing again after in guide groove.
The embodiment of the present invention three is referring to shown in Fig. 5 and Fig. 6.LED chip includes the first chip 20 and for the of light modulation
Two chips 21；Two Colour Fluorescence bisque 22 is wherein coated on the second chip 21, Two Colour Fluorescence bisque 22 is red light fluorescent powder and Huang
Emitting phosphor mixed fluorescent powder colloid；And first chip 20 and the discontinuously setting of the second chip 21.In this example, light source is white light,
White light LED part is usually to send out white light by blue chip combination yellow fluorescent powder.The present invention is using the double-deck fluorescent powder skill
Art coats Two Colour Fluorescence powder that is, on a part of blue chip, then again in its one layer of yellow fluorescent powder of outer setting.This tune
The double-colored light source of color, colour temperature is partially warm, there is the main wave of obvious feux rouges.Double-colored light source does not pass through the encapsulation of Two Colour Fluorescence powder with other
Chip (monochromatic source) be spaced setting, or only set on the heat sink on piece at device heat sink both ends.Double-colored light source and list
Color light source can be separately connected control switch circuit, realize switch control respectively.When needing colour temperature colder, bi-coloured light is closed
The switch in source starts the LED of double-colored light source not；When needing colour temperature partially warm, the switch of double-colored light source is opened.In a reality
It applies in example, double-colored light source and monochromatic source are exported side by side with two of a LED controller and connected；It in addition to this, can be with
It is individually for double-colored light source and sets a manual switch being controlled, which connect with LED drive circuit, and then passes through LED
Driving circuit controls the switch motion of double-colored light source.Referring to the circuit diagram of Figure 13, second switch 23 leads to the 2nd LED driving
Device 25 controls the second chip 21；First switch 24 controls the first chip 20 by the first LED driver 26.It can be between chip
It is series relationship as shown in the figure, is also possible to parallel relationship, or the series-parallel relationship of mixing.
The packaging method of the LED light source of embodiment one, comprising:
It include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, wherein heat sink and electrode metal piece
For copper sheet, they are embedded on EMC matrix；The rack surface has described heat sink for die bond, sets heat sink two sides
There is electrode metal piece；Heat sink extends to both ends to realize end cut；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire makes two electrodes of chip be connected respectively to the electrode metal on piece of its two sides by lead；
The glue containing fluorescent powder is got up chip package again.
For manufactured strip packaging, it can according to need and encapsulation bar is cut.Such as the function of a chip
Rate is 1w, then four chips along heat sink distribution are that 4w can be then cut to if necessary to two packagings
The device of one 1w and 3w.
The packaging method of the LED light source of embodiment two comprising:
Include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, wherein bracket includes following characteristics:
The heat sink on piece is equipped with the LED chip fixed bit being dislocatedly distributed；Each LED core in the heat sink transverse direction
The two sides of piece fixed bit, there are wide regions and narrow region；The electrode metal piece positioned at heat sink two sides, wherein being located at narrow
The area of the first electrode sheet metal of region side is s, and the area positioned at the second electrode sheet metal of wide region side is m, s
Meet following relationship with m: s > m；It is equipped with guide groove on the first electrode sheet metal, when being fixed with lead, is fixed on described
A part of lead on first electrode sheet metal is placed in guide groove, and the trend of guide groove is towards chip direction；It is wherein heat sink
Piece and electrode metal piece are copper sheet, they are embedded on EMC matrix, wherein being equipped with described in the first electrode sheet metal
The electrode metal piece of guide groove；
Then insulating layer is made；Insulating layer can use jet printing mode；In another embodiment, it can first make
The double-colored arogel piece for making feux rouges and yellow fluorescent powder, is then cut into small pieces, is bonded in heat sink on piece；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire, wherein the one end of first lead is fixed on first electrode sheet metal central area, first
A part of lead is limited in the guide groove, and then the other end is fastened on the electrode of chip；
Sealing solidification is carried out again.
The packaging method of the LED light source of above-described embodiment three, comprising:
It include the bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis, the rack surface has for die bond
Described heat sink, heat sink two sides be equipped with electrode metal piece；Heat sink extends to both ends to realize end cut；Wherein
Heat sink is copper sheet with electrode metal piece, they are embedded on EMC matrix；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；Then bonding wire passes through two electrodes of chip
Lead is connected respectively to the electrode metal on piece of its two sides；
The coating of Two Colour Fluorescence powder is carried out to the second chip；Wherein Two Colour Fluorescence bisque is that red light fluorescent powder and yellow light are glimmering
Light powder mixed fluorescent powder colloid, LED chip include the first chip and the second chip for light modulation, and the first chip and second
Chip is discontinuously arranged；
The glue containing yellow fluorescent powder is got up all chip packages again.
For the production method of Two Colour Fluorescence powder packaging, in another embodiment, referring to Fig. 7 to Figure 10, in order to
Double-colored arogel layer is made, first can set the foxing 29 of protrusion in chip surrounding, this foxing can be to be temporarily fixed at by wax
It on heat sink, or is permanently affixed on heat sink, is produced on heat sink when making bracket, form a region 30 of dusting.So
Double-colored arogel is sprayed on chip by printing technology afterwards.Foxing can be removed by melting wax when necessary, remove foxing
It needs to remove before double-colored powder curable adhesive layer, is eventually fabricated double-colored arogel layer 31.
In another embodiment, foxing can use L shape foxing 28 as shown in figure 12.This foxing is convenient for removal.
Foxing can be cured colloid substances identical with the colloid of double-colored arogel layer in another embodiment.According to practical practical
It was found that the effect of the double-colored arogel layer of spray of foxing is not as shown in figure 11, double-colored arogel layer meeting 27 occurs to precipitate around chip
The problem of with accumulation, since red light fluorescent powder amount is on the low side in double-colored arogel layer, so this phenomenon will lead to double-colored arogel layer
The effect of color-temperature regulating substantially reduces.So above-mentioned set foxing during spraying Two Colour Fluorescence powder around chip, help
It is accumulated in double-colored arogel layer in chip top, and then preferably using fluorescent powder and reaches dimming effect.Using the skill of foxing
The packaging effect of art is shown in Figure 10, and the double-colored arogel layer 22 above chip is relatively uniform, and which raises the product of product
Matter.
The control method of present invention proposition LED packaging comprising:
To the first chip and the second chip in the EMC metal bonding device of distributed III group-III nitride emitting semiconductor
Power control is carried out respectively, the brightness of chip is controlled by the input current to chip, and the chip of different brightness excites glimmering
The difference of light powder degree and generate different colors, the color of the sending of the first chip and the second chip is combined into different face
Color.Since the first chip and the second chip can issue different colors under power controller control, their combination then can
Issue increasingly complex different colours.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (7)
1. a kind of packaging method of LED light source, comprising:
It include the EMC bracket of heat sink, electrode metal piece using copper sheet as substrate synthesis；The rack surface has for die bond
Heat sink, LED chip is fixed on heat sink on piece；Electrode metal piece is equipped with heat sink two sides；Two electrodes of LED chip pass through
Lead is connected respectively to the electrode metal piece of two sides；LED chip is dislocatedly distributed in the heat sink on piece；In the heat sink cross
The two sides of each LED chip on direction, there are wide regions and narrow region, wherein being equipped with insulating layer on wide region；Wherein
Heat sink is copper sheet with electrode metal piece, they are embedded on EMC matrix；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire makes two electrodes of chip be connected respectively to the electrode metal on piece of its two sides by lead；
The glue containing fluorescent powder is got up chip package again.
2. the packaging method of LED light source according to claim 1, it is characterised in that: in the heat sink transverse direction
On each LED chip two sides, there are wide regions and narrow region；The electrode metal piece positioned at heat sink two sides, wherein
Area positioned at the first electrode sheet metal of narrow region side is s, positioned at the area of the second electrode sheet metal of wide region side
Meet following relationship for m, s and m: s > m.
3. the packaging method of LED light source according to claim 1, it is characterised in that: on the first electrode sheet metal
Equipped with guide groove, a part for the lead being fixed on the first electrode sheet metal is placed in guide groove, the trend of guide groove
Towards chip direction.
4. the packaging method of LED light source according to claim 1, it is characterised in that: LED chip includes the first chip and use
In the second chip of light modulation；Wherein be coated with Two Colour Fluorescence bisque on the second chip, Two Colour Fluorescence bisque be red light fluorescent powder and
Yellow fluorescent powder mixed fluorescent powder colloid；And first chip be discontinuously arranged with the second chip.
5. the packaging method of LED light source according to claim 3, characterized by comprising:
Using copper sheet as the bracket for described in substrate synthesis including heat sink, electrode metal piece, wherein heat sink and electrode metal piece
For copper sheet, they are embedded on EMC matrix, wherein being the electrode metal equipped with the guide groove in the first electrode sheet metal
Piece；Then the insulating layer is made；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire, wherein the one end of first lead is fixed on first electrode sheet metal central area, first lead
A part be limited in the guide groove, then the other end is fastened on the electrode of chip；
Sealing solidification is carried out again.
6. the packaging method of LED light source according to claim 1, characterized by comprising:
The bracket be by substrate of copper sheet synthesis described in include heat sink, electrode metal piece bracket, wherein heat sink
It is copper sheet with electrode metal piece, they are embedded on EMC matrix；
In heat sink on piece die bond, the chip of die bond is bipolar electrode chip；
Then bonding wire makes two electrodes of chip be connected respectively to the electrode metal on piece of its two sides by lead；
The coating of Two Colour Fluorescence powder is carried out to the second chip；Wherein Two Colour Fluorescence bisque is that red light fluorescent powder and yellow fluorescent powder are mixed
Fluorescent powder colloid is closed, LED chip includes the first chip and the second chip for light modulation, and the first chip does not connect with the second chip
Continuous setting；
The glue containing yellow fluorescent powder is got up all chip packages again.
7. the packaging method of LED light source according to claim 1, it is characterised in that: to as claimed in claim 4 first
Chip and the second chip carry out power control respectively, and the brightness of chip, different brightness are controlled by the input current to chip
Chip excitation fluorescent powder degree difference and generate different colors, the color group of the sending of the first chip and the second chip
Synthesize different colors.
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| CN201811354358.9A CN110416382B (en) | 2015-07-21 | 2015-07-21 | Packaging method of LED light source |
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| CN201510430282.3A CN104993033B (en) | 2015-07-21 | 2015-07-21 | The EMC metal bonding device and packaging method of distributed group III-nitride emitting semiconductor |
| CN201811354358.9A CN110416382B (en) | 2015-07-21 | 2015-07-21 | Packaging method of LED light source |
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| CN111098378A (en) * | 2019-12-31 | 2020-05-05 | 湖州练市皇盛木业有限公司 | Manufacturing process of quick-heating type geothermal floor |
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| CN110416382B (en) | 2023-03-31 |
| CN104993033A (en) | 2015-10-21 |
| CN104993033B (en) | 2019-01-08 |
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