CN101728366A - Encapsulating module of photoelectric element and manufacturing method thereof - Google Patents
Encapsulating module of photoelectric element and manufacturing method thereof Download PDFInfo
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- CN101728366A CN101728366A CN200810167673A CN200810167673A CN101728366A CN 101728366 A CN101728366 A CN 101728366A CN 200810167673 A CN200810167673 A CN 200810167673A CN 200810167673 A CN200810167673 A CN 200810167673A CN 101728366 A CN101728366 A CN 101728366A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
The invention relates to an encapsulating module structure for a photoelectric element of a dielectric layer and a manufacturing method thereof. The encapsulating module structure comprises a radiating base plate, a dielectric layer arranged above the radiating base plate, a plurality of semiconductor luminous crystal grains arranged at the dent of the dielectric layer and fixed on the radiating base plate, a printed circuit board with a plurality of holes corresponding to the dent of the dielectric layer and covered on the dielectric layer to expose a plurality of semiconductor luminous crystal grains, a plurality of metal conducting wires electrically connecting a plurality of semiconductor luminous crystal grains with the printed circuit board, and a transparent glue material used for coating a plurality of semiconductor luminous crystal grains and a plurality of metal conducting wires. The manufacturing method uses a simple and quick injection molding technology to form the dielectric layer and uses the dielectric layer as a buffer layer and a reflecting cup between the printed circuit board and the radiating base plate, so as to not only effectively reduce the heat stress between the printed circuit board and the radiating base plate, but also increase the brightness of light.
Description
Technical field
The present invention relates to a kind of package module and manufacture method thereof of photoelectric cell, particularly a kind of package module and manufacture method thereof that comprises the photoelectric cell of dielectric layer.
Background technology
For light-emitting diode (Light Emitting Diode; LED), long, lower calorific value of life-span and low power consumption, and can energy savings and reduce that to pollute be biggest advantage.In recent years, light-emitting diode is widely used in billboard, traffic sign, LCD (Liquid Crystal Display; LCD) and as the backlight of the portable electric product of mobile phone, will have an opportunity to replace the application market of incandescent lamp bulb and fluorescent lamp future.
For reaching white applications, in the encapsulating structure of High Power LED module, owing to can produce high temperature during the current drives light-emitting diode (LED) module, not only can injure semiconductor grain and quicken that it is aging, the related elements that is included in the light-emitting diode (LED) module also may produce thermal stress and infringement to some extent by Yin Gaowen.Therefore, the light emitting diode module package structure of the high heat radiation of tool and simple module encapsulation method thereof are that present all circles are pursued.
In the TaiWan, China patent announcement number I281272 number, please refer to Fig. 1, it is the profile of a kind of package structure for LED of prior art, and its encapsulation process provides a printed circuit board (PCB) 101 that is provided with a plurality of perforations separately, at aforementioned printed circuit board (PCB) (Printed Circuit Board; PCB) one side is laid with many circuitry lines, and after the another side of aforementioned printed circuit board (PCB) sticked together by a cementing layer 103 and a metal substrate 102, again at least one LED crystal particle 104 and 105 is inserted in each aforesaid perforation, it is attached on the aforesaid metal substrate 102, routing 106 and 107 makes its electric connection between the described circuit trace on each aforementioned LED crystal particle 104 and the aforementioned printed circuit board (PCB) 101 then, sealing 108 in each aforesaid perforation at last is enclosed in each aforementioned LED crystal particle 104 in each perforation.
Many electronic products have all faced the problem of thermal stress, and the most tangible is the Electronic Packaging industry, because the out-phase material is expanded with heat and contract with cold and produces mutual system and then buckling deformation takes place and stress because of nature difference in encapsulation process.Known to above-mentioned, in the encapsulation process of prior art, carry out the operation of solid crystalline substance after directly binding with a viscose earlier between printed circuit board (PCB) and the heat-radiating substrate again, when solid crystalline substance carries out under high temperature, may be between printed circuit board (PCB) and the metal substrate because of thermal coefficient of expansion (Coefficient of thermalexpansion; CTE) difference and produce thermal stress (Thermal Stress) causes the light-emitting diode (LED) module potted element to produce the damage of module distortion for the first time in manufacture process.In addition, after encapsulation is finished, when the current drives light-emitting diode (LED) module, though the high temperature that LED crystal particle produces utilizes the heat-radiating substrate heat radiation, but expand in the back because heat-radiating substrate is heated, and it may produce secondary thermal stress because of expansion coefficient difference with engaging of printed circuit board (PCB) and LED crystal particle.Be in for a long time under the high temperature, will reduce the useful life of light-emitting diode assembly because of each interelement thermal effect.Hence one can see that, and the light-emitting diode (LED) module encapsulation not only need be considered outside the heat radiation of LED crystal particle, is contained in the useful life that the interior various elements of module also influence module, must consider its contingent harmful effect in the lump.
Summary of the invention
Expanding with heat and contract with cold is the common person's character of material, the coefficient of expansion of different material is different, for asking heat-radiating substrate, can reach heat radiation between semiconductor light emitting crystal grain and the printed circuit board (PCB) and reduce the infringement that thermal stress is brought the module distortion, the object of the present invention is to provide a kind of encapsulating structure and manufacture method thereof that comprises the semiconductor module of a dielectric layer, it forms a dielectric layer with ejection formation (Injection Molding) technology simply fast, and with dielectric layer as resilient coating between printed circuit board (PCB) and the heat-radiating substrate and reflector, not only can effectively reduce the thermal stress between printed circuit board (PCB) and the heat-radiating substrate, and can increase the brightness of light.
The present invention proposes a kind of package module of photoelectric cell, the encapsulation modular structure of aforesaid photoelectric cell comprises a heat-radiating substrate, one dielectric layer is positioned at aforesaid heat-radiating substrate top, have the aforesaid heat-radiating substrate of a plurality of recesses in order to exposed portions serve, a plurality of semiconductor light emitting crystal grain, be positioned at the recess of aforesaid dielectric layer and be fixed on the aforesaid heat-radiating substrate, one has the printed circuit board (PCB) of a plurality of holes, its hole corresponds to the recess of aforesaid dielectric layer, cover on the aforesaid dielectric layer and expose aforesaid a plurality of semiconductor light emitting crystal grain, many strip metals lead electrically connects aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid printed circuit board (PCB), and a transparent adhesive tape material is in order to coat aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid many strip metals lead.
Above-mentioned semiconductor light emitting crystal grain is by at least one plain conductor and above-mentioned printed circuit board (PCB) electric connection.Its material of above-mentioned heat-radiating substrate is copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other coefficients of expansion metal material close with semiconductor light emitting crystal grain.
Go back the mixed light transition material in the above-mentioned transparent adhesive material, wherein above-mentioned transparent adhesive material is epoxy resin (epoxy) or silica gel (silicone gel), aforesaid transition material can be fluorescent material, and aforesaid fluorescent material is silicates, oxide family, nitride family or sulfide family.
Above-mentioned semiconductor light emitting crystal grain can be LED crystal particle, laser diode or light sensing crystal grain.Above-mentioned semiconductor light emitting crystal grain engages and is fixed on the heat-radiating substrate with crystal-bonding adhesive or eutectic.
The recess of above-mentioned medium is a hollow reflector, and the material of this dielectric layer is polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).
The present invention also provides a kind of package module manufacture method of photoelectric cell, its step comprises: a heat-radiating substrate is provided, form a dielectric layer on aforesaid heat-radiating substrate, form a printed circuit board (PCB) on aforesaid dielectric layer, a plurality of semiconductor light emitting crystal grain are fixed on the aforesaid heat-radiating substrate, many strip metals lead electrically connects aforesaid semiconductor light emitting crystal grain and aforesaid printed circuit board (PCB), and a transparent adhesive tape material is in order to coat aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid many strip metals lead.Wherein above-mentioned dielectric layer has the aforesaid heat-radiating substrate of a plurality of recesses with exposed portions serve, aforesaid printed circuit board (PCB) has a plurality of holes, aforesaid a plurality of hole is corresponding with a plurality of recesses of aforesaid dielectric layer, and in the recess of aforesaid a plurality of semiconductor light emitting crystal grain corresponding to aforesaid dielectric layer.
The package module of considering photoelectric cell during fabrication, may make a variation to some extent because of the high and low temperature that each processing step uses, may make module damaged by the distortion of thermal stress before not finishing as yet between its element because of the expansion coefficient difference of material, the present invention also discloses the package module manufacture method of other two kinds of photoelectric cells, wherein the package module step of manufacturing of first kind of photoelectric cell comprises: a heat-radiating substrate is provided, form a dielectric layer on aforesaid heat-radiating substrate, wherein aforesaid dielectric layer comprises a plurality of recesses, a plurality of semiconductor light emitting crystal grain are positioned in the recess of aforesaid dielectric layer respectively and are fixed on the aforesaid heat-radiating substrate, form the printed circuit board (PCB) of a plurality of holes of a tool, aforesaid hole corresponds to the recess of the recess of aforesaid dielectric layer, cover on the aforesaid dielectric layer, expose aforesaid semiconductor light emitting crystal grain, many strip metals lead electrically connects aforesaid semiconductor light emitting crystal grain and aforesaid printed circuit board (PCB), and a transparent adhesive tape material is in order to coat aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid many strip metals lead.
The package module step of manufacturing of second kind of photoelectric cell comprises: a heat-radiating substrate is provided, a plurality of semiconductor light emitting crystal grain are individually fixed on the aforesaid heat-radiating substrate, form a dielectric layer on aforesaid heat-radiating substrate, aforesaid dielectric layer comprises a plurality of recesses, aforesaid recess is corresponding respectively and expose aforesaid semiconductor light emitting crystal grain, form the printed circuit board (PCB) of a plurality of holes of a tool, aforesaid hole corresponds to the recess of the recess of aforesaid dielectric layer, cover on the aforesaid dielectric layer, expose aforesaid semiconductor light emitting crystal grain, many strip metals lead electrically connects aforesaid semiconductor light emitting crystal grain and aforesaid printed circuit board (PCB), and a transparent adhesive tape material is in order to coat aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid many strip metals lead.
Its semiconductor light emitting crystal grain of the package module of above-mentioned photoelectric cell also can use except general routing engages (wirebonding) mode and cover crystal type (Flip Chip), the package module step of manufacturing of its photoelectric cell comprises: a heat-radiating substrate is provided, form a dielectric layer on aforesaid heat-radiating substrate, wherein aforesaid dielectric layer comprises a plurality of recesses, cover in the recess that brilliant semiconductor light emitting crystal grain is positioned over aforesaid dielectric layer respectively and be fixed on the aforesaid heat-radiating substrate a plurality of, form the printed circuit board (PCB) of a plurality of holes of a tool, aforesaid hole corresponds to the recess of the recess of aforesaid dielectric layer, cover on the aforesaid dielectric layer, expose the aforesaid brilliant semiconductor light emitting crystal grain that covers, the submounts of the electric connected crystal covered semiconductor light emitting crystal grain of many strip metals lead and aforesaid printed circuit board (PCB), and a transparent adhesive tape material is in order to coat aforesaid a plurality of brilliant semiconductor light emitting crystal grain and aforesaid many strip metals lead of covering.
In the package module manufacture method of above-mentioned photoelectric cell, the hole of printed circuit board (PCB) can utilize the CNC bore mode to carry out.
In the package module manufacture method of above-mentioned photoelectric cell, form a dielectric layer with ejection forming technique, above-mentioned dielectric layer is a hollow reflector.
In the package module manufacture method of above-mentioned photoelectric cell, engage (wire bonding) technology with above-mentioned semiconductor light emitting crystal grain and above-mentioned printed circuit board (PCB) electric connection with routing.
Its material of above-mentioned heat-radiating substrate is copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other coefficients of expansion metal material close with its semiconductor light emitting crystal grain.
Go back the mixed light transition material in the above-mentioned transparent adhesive material, wherein aforesaid transparent adhesive material is epoxy resin (epoxy) or silica gel (silicone gel), and aforesaid transition material can be fluorescent material.
Above-mentioned semiconductor grain can be LED crystal particle, laser diode or light sensing crystal grain.
Above-mentioned crystal grain engages with elargol or eutectic and is fixed on the heat-radiating substrate.
The recess of above-mentioned medium is a hollow reflector, and the material of this dielectric layer is polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).
Description of drawings
Fig. 1 is the cutaway view of a kind of package structure for LED of prior art;
Fig. 2 is the schematic diagram of package structure for LED of the present invention;
Fig. 3 is the flow chart of semiconductor light emitting module package modular structure of the present invention;
Fig. 4 (a)～4 (g) is one of embodiment of the semiconductor light emitting module package module of the solid crystal technique of the present invention;
Fig. 5 (a)～5 (g) is two of the embodiment of the semiconductor light emitting module package module of the solid crystal technique of the present invention;
Fig. 6 (a)～6 (g) is three of the embodiment of the semiconductor light emitting module package module of the solid crystal technique of the present invention;
Fig. 7 (a)～7 (h) is one of embodiment of the semiconductor light emitting module package module of Flip Chip of the present invention.
Wherein, description of reference numerals is as follows:
101 printed circuit board (PCB)s, 102 metal substrates
103 cementing layers, 104 crystal grain
105 crystal grain, 106 plain conductors
The 108 transparent sealings of 107 plain conductors
201,401,501,601,701 printed circuit board (PCB)s
202,402,502,602,702 holes
203,403,503,603,703 heat-radiating substrates
204,404,504,604,704 dielectric layers
205,405,505,605,705 recesses
206,406,506,606,706 semiconductor light emitting crystal grain
207,407,507,607,707 plain conductors
208,408,508,608,708 transparent adhesive tape materials
209,409,509,609,709 light-converting materials
706 cover brilliant semiconductor light emitting crystal grain 711 projections
712 weld pads, 713 submounts
Embodiment
The present invention describes a kind of package module and manufacture method thereof of photoelectric cell at this.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, enforcement of the present invention is not defined in the package module of photoelectric cell and the known specific details of technical staff of manufacture method thereof.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.Preferred embodiment meeting of the present invention is described in detail as follows; yet except these are described in detail; the present invention can also be implemented among other the embodiment widely, and scope of the present invention do not limited, and it is as the criterion with the appended protection range that claim was limited.
The present invention proposes a kind of package module of photoelectric cell, please refer to Fig. 2, this package module comprises a heat-radiating substrate 203, its heat-radiating substrate can be copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or the close metal material of other coefficients of expansion semiconductor light emitting crystal grain a plurality of with it.One dielectric layer 204 is positioned at aforesaid heat-radiating substrate 203 tops, has the aforesaid heat-radiating substrate 203 of a plurality of recesses 205 in order to exposed portions serve, and its dielectric layer 204 materials can be polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).A plurality of semiconductor light emitting crystal grain 206 are positioned at the recess 205 of aforesaid dielectric layer 204 and are fixed on the aforesaid heat-radiating substrate, and this semiconductor light emitting crystal grain 206 can be the routing juncture or covers crystal type.One has the printed circuit board (PCB) 201 of a plurality of holes 202, and its hole 202 corresponds to the recess 205 of aforesaid dielectric layer 204, covers on the aforesaid dielectric layer 204 and exposes aforesaid a plurality of semiconductor light emitting crystal grain 206.Many strip metals lead 207 electrically connects aforesaid a plurality of semiconductor light emitting crystal grain 206 and aforesaid printed circuit board (PCB) 201, and a transparent adhesive tape material 208 is in order to coat aforesaid a plurality of semiconductor light emitting crystal grain 206 and aforesaid many strip metals lead 207.Aforesaid transparent adhesive tape material 208 can comprise light-converting material 209, and aforesaid light-converting material 209 can be fluorescent material, and it comprises silicates, oxide family, nitride family or sulfide family.
The present invention discloses a kind of package module manufacturing process of photoelectric cell, please refer to shown in Figure 3ly, and it comprises:
Step 1 (301) a: heat-radiating substrate is provided;
Step 2 (302): form a dielectric layer on aforesaid heat-radiating substrate with ejection forming technique, wherein aforesaid dielectric layer comprises the heat-radiating substrate of a plurality of recesses and exposed portions serve;
Step 3 (303): a plurality of semiconductor light emitting crystal grain are positioned over the recess of each aforementioned dielectric layer respectively and are fixed on the aforesaid heat-radiating substrate;
Step 4 (304) a: printed circuit board (PCB) with hole is covered on the aforesaid dielectric layer after with the corresponding aforesaid dielectric layer recess of hole;
Step 5 (305): electrically connect aforesaid a plurality of semiconductor light emitting crystal grain and aforesaid printed circuit board (PCB) with plain conductor again;
Step 6 (306): cover on aforesaid a plurality of semiconductor light emitting crystal grain and the aforesaid plain conductor with the transparent adhesive tape material at last.
The package module of photoelectric cell is in manufacture process, in the time of may making a variation to some extent because of the high and low temperature that above-mentioned each processing step uses, may make between its element that module is damaged by the distortion of thermal stress earlier because of the expansion coefficient difference of material before not finishing as yet, its manufacturing process can be because of the temperature height change program of using, and reduces the influence of thermal stress to the program of low temperature with high-temperature.
The present invention discloses a kind of package module manufacture method of photoelectric cell, its step comprises: please refer to shown in Fig. 4 (b), in order to improve the heat dissipation problem of above-mentioned package module, the invention provides a heat-radiating substrate and improve the overheated problem of package module, its heat-radiating substrate 403 can be copper, nickel, silver, plumbous, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), the close metal material of diamond or other coefficients of expansion semiconductor light emitting crystal grain a plurality of with it, form a dielectric layer 404 on aforesaid heat-radiating substrate with ejection forming technique again, the recess 405 of its dielectric layer 404 is a hollow reflector, can be as the resilient coating and the reflector of storeroom thermal stress, and the brightness of increase semiconductor light emitting crystal grain, its dielectric layer 404 materials can be polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).General ejection formation (Injection Molding) program mainly contains five programs, (1) warm-up phase (Preheating): this stage comprises the material of baking in advance, preheating and the mold heated of plastic cement.Baking material promptly is heated to plastics in advance and is lower than about 10～15 ℃ of glass transition temperature (Glass TransitionTemperature) with materal drier in advance, keeps a period of time and has removed moisture in the plastics.Preheating reaches the screw rod that heats Jet forming machine in advance, and rotating screw bolt is clamp-oned plastics the ejaculation of preparing plastic in the plunger again.This moment simultaneously also heating mould to reach the mold temperature when penetrating.(2) the filling stage (Filling): utilize oil pressure pressure lead-screw or plunger, the plastics of fusion are extruded, inject in the mould,, be filled with the whole spaces of whole die cavity via running channel, runner, entrance die cavity.(3) packing stage (Packing): after plasticizing is full of die cavity fully, grant high pressure to inject more plastics, the pressurize purpose has two: after (a) filling is finished, avoid plastics to flow backwards because of cooled and solidified.(b) make in the die cavity plastics keep high pressure, can not separate because cooling is shunk between plastics and die wall, maintenance is close to each other, makes the moulding product more fine and close, makes plastics can duplicate in the die cavity shape fully not because of the contraction distortion.(4) cooling stage (cooling): wait for that plastics are cooled to mold temperature fully in the die cavity, make the plastics can full solidification, reach certain intensity, be stained with glutinous mould because of plastics when avoiding die sinking and produce distortion.(5) the die sinking stage (Mold Open): open mould, the moulding product by drawing the material pin to pull out the fixation side die face, are then ejected movable side form face with knock pin, the moulding product are dropped naturally.Five steps of repetitive cycling (1)～(5) are the cycle period of whole ejection formation.
Please refer to shown in Fig. 4 (c), it is that adhesive agent is attached to aforesaid dielectric layer 404 tops with epoxy resin (epoxy) that a printed circuit board (PCB) 401 with multiple hole is provided.The printed circuit board (PCB) 401 of an aforementioned tool multiple hole, its basic manufacturing technology can be divided into subraction (Subtractive) and addition process (Additive) two class processes, and the multilayer manufacturing technology comprises two kinds of lamination method and Layer increasing methods in addition.Subraction is to utilize chemicals or machinery that the circuit board (promptly being covered with the circuit board of complete one metal forming) of blank is gone up unwanted place to remove, and remaining place is a circuitry needed.And addition process generally is to plate in advance on the substrate that approaches copper at one now, cover photoresist (D/F), develop again through ultraviolet photoetching, the place that needs is exposed, utilize to electroplate then and thicken needed specification formal circuit copper on the wiring board is thick, plate the anti-etching resistance agent of one deck-metal foil tin again, remove photoresist (this technology is called striping) at last, again the copper foil layer under the photoresist is etched away.Lamination method is one of method of making multilayer board, is just to wrap skin after making internal layer, skin is handled with subraction or addition process again, constantly repeats the action of lamination, and available multilayer board then is the sequential lamination method.Layer increasing method is one of method of making multilayer board, as the term suggests be printed circuit board (PCB) adding in layer.Whenever adding last layer just handles to required shape.After selecting the manufacture process of above-mentioned a kind of printed circuit board (PCB) and finishing, its hole is preferably in circuit layout and electroplates the first being processed operation and finish, can reduce boring destroys the electrodeposited coating on circuit distribution and surface or makes the plate face impaired because of producing stress, its hole can carry out with the CNC bore mode, and the size of aforesaid hole 402 must conform to the recess of aforesaid dielectric layer recess, please refer to shown in Fig. 4 (a).
Please refer to shown in Fig. 4 (d), use elargol or eutectic juncture to be fixed on the aforesaid heat-radiating substrate 403 a plurality of semiconductor light emitting crystal grain 406, aforesaid semiconductor light emitting crystal grain 406 can be light-emitting diode, lasing fluorescence diode or light sensing crystal grain.
Please refer to shown in Fig. 4 (e), many strip metals lead 407 engages (wire bonding) technology via routing aforesaid semiconductor light emitting crystal grain 406 and aforesaid printed circuit board (PCB) 401 is electrically connected, and aforesaid plain conductor 407 can be gold thread, silver-colored line, copper cash or aluminum steel.
At last; use transparent adhesive tape material 408 to cover on semiconductor light emitting crystal grain 406 and the many strip metals lead 407 as a protective layer by transfer formation (transfer-molding) or injection moulding modes such as (inject-molding), the material of its transparent adhesive tape material 408 can be epoxy resin (epoxy) or silica gel (silicone gel).If use the transparent adhesive tape material to coat aforesaid a plurality of semiconductor light emitting crystal grain 406 and aforesaid many strip metals lead 407 separately, make aforesaid semiconductor light emitting crystal grain 406 only launch the electromagnetic radiation wavelength of monochromatic wavelength, also can comprise light-converting material 409 by aforesaid transparent adhesive tape material, aforesaid light-converting material 409 can be fluorescent material, aforementioned thus fluorescent material can be excited and produce second wavelength and and a wavelength producing of semiconductor light emitting crystal grain 406 mix and the formation white light or the electromagnetic radiation wavelength of other multi-wavelengths.Aforesaid fluorescent material comprises silicates, oxide family, nitride family or sulfide family.Please refer to shown in Fig. 4 (f).
In addition, can cover second layer transparent adhesive tape material 408 again after containing the glue material of light-converting material 409 at elder generation's coating ground floor on the sealing program, or cover the glue material that the second layer contains light-converting material 409 again after coating ground floor transparent adhesive tape material 408 earlier, same aforementioned lights transition material can be fluorescent material produce because of being excited second wavelength and and the electromagnetic radiation wavelength of wavelength mixing formation white light or other multi-wavelengths of 406 generations of semiconductor light emitting crystal grain, please refer to shown in Fig. 4 (g).
Wherein aforesaid dielectric layer 404 has the aforesaid heat-radiating substrate 403 of a plurality of recesses 405 with exposed portions serve, aforesaid printed circuit board (PCB) 401 has a plurality of holes 402, its a plurality of holes 402 are corresponding with a plurality of recesses 405 of aforesaid dielectric layer 404, and in the recess 405 of aforesaid a plurality of semiconductor light emitting crystal grain 406 corresponding to aforesaid dielectric layer 404.
Consider that encapsulating module of photoelectric element is when manufacture process, in the time of may making a variation to some extent because of the high and low temperature of each processing step, make and to make because of the expansion coefficient difference of material between its element that module is damaged by the distortion of thermal stress earlier before not finishing as yet, the present invention also discloses the package module manufacture method of other two kinds of photoelectric cells, wherein the package module step of manufacturing of first kind of photoelectric cell comprises: please refer to shown in Fig. 5 (b), in order to improve the heat dissipation problem of package module, the invention provides a heat-radiating substrate and improve the overheated problem of package module, its heat-radiating substrate 503 can be copper, nickel, silver, plumbous, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), the close metal material of diamond or other coefficients of expansion semiconductor light emitting crystal grain a plurality of with it, form a dielectric layer 504 on aforesaid heat-radiating substrate 503 with ejection forming technique again, aforesaid dielectric layer 504 has the aforesaid heat-radiating substrate 503 of a plurality of recesses 505 with exposed portions serve, and the recess 505 of aforesaid dielectric layer 504 is a hollow reflector, can be as the resilient coating and the reflector of storeroom thermal stress, and the brightness of increase semiconductor light emitting crystal grain, its material can be polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).General ejection formation program mainly contains five programs, (1) warm-up phase (Preheating): this stage comprises the material of baking in advance, preheating and the mold heated of plastic cement.Baking material promptly is heated to plastics in advance and is lower than about 10～15 ℃ of glass transition temperature (Glass Transition Temperature) with materal drier in advance, keeps a period of time and has removed moisture in the plastics.Preheating reaches the screw rod that heats Jet forming machine in advance, and rotating screw bolt is clamp-oned plastics the ejaculation of preparing plastic in the plunger again.This moment simultaneously also heating mould to reach the mold temperature when penetrating.(2) the filling stage (Filling): utilize oil pressure pressure lead-screw or plunger, the plastics of fusion are extruded, inject in the mould,, be filled with the whole spaces of whole die cavity via running channel, runner, entrance die cavity.(3) packing stage (Packing): after plasticizing is full of die cavity fully, grant high pressure to inject more plastics, the pressurize purpose has two: after (a) filling is finished, avoid plastics to flow backwards because of cooled and solidified.(b) make in the die cavity plastics keep high pressure, can not separate because cooling is shunk between plastics and die wall, maintenance is close to each other, makes the moulding product more fine and close, makes plastics can duplicate in the die cavity shape fully not because of the contraction distortion.(4) cooling stage (Cooling): wait for that plastics are cooled to mold temperature fully in the die cavity, make the plastics can full solidification, reach certain intensity, be stained with glutinous mould because of plastics when avoiding die sinking and produce distortion.(5) the die sinking stage (Mold Open): open mould, the moulding product by drawing the material pin to pull out the fixation side die face, are then ejected movable side form face with knock pin, the moulding product are dropped naturally.Five steps of repetitive cycling (1)～(5) are the cycle period of whole ejection formation.
Please refer to shown in Fig. 5 (c), use elargol or eutectic juncture to be fixed on the heat-radiating substrate 503 a plurality of semiconductor light emitting crystal grain 506, aforesaid semiconductor light emitting crystal grain 506 can be light-emitting diode, lasing fluorescence diode or light sensing crystal grain.
Please refer to shown in Fig. 5 (d), it is that adhesive agent sticks together and is covered in aforesaid dielectric layer 504 tops with epoxy resin (epoxy) that one printed circuit board (PCB) 501 with porous is provided, and a plurality of recesses of its a plurality of holes 502 and aforesaid dielectric layer 504 505 are corresponding and expose a plurality of semiconductor light emitting crystal grain 506.Aforementioned printed circuit board (PCB) with porous, its basic manufacturing technology can be divided into subraction (Subtractive) and addition process (Additive) two class processes, and the multilayer manufacturing technology comprises two kinds of lamination method and Layer increasing methods in addition.Subraction is to utilize chemicals or machinery that the circuit board (promptly being covered with the circuit board of complete one metal forming) of blank is gone up unwanted place to remove, and remaining place is a circuitry needed.And addition process generally is to plate in advance on the substrate that approaches copper at one now, cover photoresist (D/F), develop again through ultraviolet photoetching, the place that needs is exposed, utilize to electroplate then and thicken needed specification formal circuit copper on the wiring board is thick, plate the anti-etching resistance agent of one deck-metal foil tin again, remove photoresist (this technology is called striping) at last, again the copper foil layer under the photoresist is etched away.Lamination method is one of method of making multilayer board, is just to wrap skin after making internal layer, skin is handled with subraction or addition process again, constantly repeats the action of lamination method, and available multilayer board then is the sequential lamination method.Layer increasing method is one of method of making multilayer board, as the term suggests be printed circuit board (PCB) adding in layer.Whenever adding last layer just handles to required shape.After selecting the manufacture process of above-mentioned a kind of printed circuit board (PCB) and finishing, its hole is preferably in circuit layout and electroplates the first being processed operation and finish, can reduce boring destroys the electrodeposited coating on circuit distribution and surface or makes the plate face impaired because of producing stress, its hole can carry out with the CNC bore mode, and the size of aforesaid hole 501 must conform to the recess of aforesaid dielectric layer recess, as please refer to shown in Fig. 5 (a).
Please refer to shown in Fig. 5 (e), many strip metals lead 507 engages (wire bonding) technology via routing aforesaid semiconductor light emitting crystal grain 506 and aforesaid printed circuit board (PCB) 502 is electrically connected, and aforesaid plain conductor 507 can be gold thread, silver-colored line, copper cash or aluminum steel.
At last; use transparent adhesive tape material 508 to cover on semiconductor light emitting crystal grain 506 and the many strip metals lead 507 as a protective layer by transfer formation (transfer-molding) or injection moulding modes such as (inject-molding), the material of its transparent adhesive tape material 508 can be epoxy resin (epoxy) or silica gel (silicone gel).If use the transparent adhesive tape material to coat aforesaid a plurality of semiconductor light emitting crystal grain 506 and aforesaid many strip metals lead 507 separately, make aforesaid semiconductor light emitting crystal grain 506 only launch the electromagnetic radiation wavelength of monochromatic wavelength, also can comprise light-converting material 509 by aforesaid transparent adhesive tape material, aforesaid light-converting material 509 can be fluorescent material, aforementioned thus fluorescent material can be excited and produce second wavelength and and a wavelength producing of semiconductor light emitting crystal grain 506 mix and the formation white light or the electromagnetic radiation wavelength of other multi-wavelengths.Aforesaid fluorescent material comprises silicates, oxide family, nitride family or sulfide family.Please refer to shown in Fig. 5 (f).
In addition, can cover second layer transparent adhesive tape material 508 again after containing the glue material of light-converting material 509 at elder generation's coating ground floor on the sealing program, or cover the glue material that the second layer contains light-converting material 509 again after coating ground floor transparent adhesive tape material 508 earlier, same aforementioned lights transition material can be fluorescent material produce because of being excited second wavelength and and the electromagnetic radiation wavelength of wavelength mixing formation white light or other multi-wavelengths of 506 generations of semiconductor light emitting crystal grain, please refer to shown in Fig. 5 (g).
The package module step of manufacturing of second kind of photoelectric cell comprises: please refer to shown in Fig. 6 (b), in order to improve the heat dissipation problem of package module, the invention provides a heat-radiating substrate and improve the overheated problem of package module, its heat-radiating substrate 603 can be copper, nickel, silver, plumbous, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si), beryllium oxide (BeO), the metal material that diamond or other coefficients of expansion semiconductor light emitting crystal grain a plurality of with it 606 is close, use elargol or eutectic juncture to be fixed on the heat-radiating substrate 603 a plurality of semiconductor light emitting crystal grain 606 again, aforesaid semiconductor light emitting crystal grain 606 can be light-emitting diode, lasing fluorescence diode or light sensing crystal grain.
Please refer to shown in Fig. 6 (c), form a dielectric layer 604 on aforesaid heat-radiating substrate 603 with ejection forming technique, the recess 605 of its dielectric layer 604 is a hollow reflector, can be as the resilient coating and the reflector of storeroom thermal stress, and the brightness of increase semiconductor light emitting crystal grain 606, its material can be polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB) and aforesaid dielectric layer 604 comprise a plurality of recesses 605, aforesaid recess 605 is corresponding respectively and expose aforesaid semiconductor light emitting crystal grain 606.General ejection formation program mainly contains five programs, (1) warm-up phase (Preheating): this stage comprises the material of baking in advance, preheating and the mold heated of plastic cement.Baking material promptly is heated to plastics in advance and is lower than about 10～15 ℃ of glass transition temperature (Glass Transition Temperature) with materal drier in advance, keeps a period of time and has removed moisture in the plastics.Preheating reaches the screw rod that heats Jet forming machine in advance, and rotating screw bolt is clamp-oned plastics the ejaculation of preparing plastic in the plunger again.This moment simultaneously also heating mould to reach the mold temperature when penetrating.(2) the filling stage (Filling): utilize oil pressure pressure lead-screw or plunger, the plastics of fusion are extruded, inject in the mould,, be filled with the whole spaces of whole die cavity via running channel, runner, entrance die cavity.(3) packing stage (Packing): after plasticizing is full of die cavity fully, grant high pressure to inject more plastics, the pressurize purpose has two: after (a) filling is finished, avoid plastics to flow backwards because of cooled and solidified.(b) make in the die cavity plastics keep high pressure, can not separate because cooling is shunk between plastics and die wall, maintenance is close to each other, makes the moulding product more fine and close, makes plastics can duplicate in the die cavity shape fully not because of the contraction distortion.(4) cooling stage (Cooling): wait for that plastics are cooled to mold temperature fully in the die cavity, make the plastics can full solidification, reach certain intensity, be stained with glutinous mould because of plastics when avoiding die sinking and produce distortion.(5) the die sinking stage (Mold Open): open mould, the moulding product by drawing the material pin to pull out the fixation side die face, are then ejected movable side form face with knock pin, the moulding product are dropped naturally.Five steps of repetitive cycling (1)～(5) are the cycle period of whole ejection formation.
Please refer to shown in Fig. 6 (d), the printed circuit board (PCB) 601 of a plurality of holes of one tool is provided, aforesaid hole 602 corresponds to the recess of the recess 605 of aforesaid dielectric layer 604, with epoxy resin (epoxy) is that adhesive agent sticks together and is covered in aforesaid dielectric layer 604 tops, exposes aforesaid semiconductor light emitting crystal grain 606.The printed circuit board (PCB) 601 of an aforesaid tool multiple hole 602, its basic manufacturing technology can be divided into subraction (Subtractive) and addition process (Additive) two class processes, and the multilayer manufacturing technology comprises two kinds of lamination method and Layer increasing methods in addition.Subraction is to utilize chemicals or machinery that the circuit board (promptly being covered with the circuit board of complete one metal forming) of blank is gone up unwanted place to remove, and remaining place is a circuitry needed.And addition process generally is to plate in advance on the substrate that approaches copper at one now, cover photoresist (D/F), develop again through ultraviolet photoetching, the place that needs is exposed, utilize to electroplate then and thicken needed specification formal circuit copper on the wiring board is thick, plate the anti-etching resistance agent of one deck-metal foil tin again, remove photoresist (this technology is called striping) at last, again the copper foil layer under the photoresist is etched away.Lamination method is one of method of making multilayer board, is just to wrap skin after making internal layer, skin is handled with subraction or addition process again, constantly repeats the action of lamination, and available multilayer board then is the sequential lamination method.Layer increasing method is one of method of making multilayer board, as the term suggests be printed circuit board (PCB) adding in layer.Whenever adding last layer just handles to required shape.After selecting the manufacture process of above-mentioned a kind of printed circuit board (PCB) and finishing, its hole is preferably in circuit layout and electroplates the first being processed operation and finish, can reduce boring destroys the electrodeposited coating on circuit distribution and surface or makes the plate face impaired because of producing stress, its hole can carry out with the CNC bore mode, and the size of aforesaid hole must conform to the recess of dielectric layer recess, please refer to shown in Fig. 6 (a).
Please refer to shown in Fig. 6 (e), many strip metals lead 607 engages (wire bonding) technology via routing aforesaid semiconductor light emitting crystal grain 606 and aforesaid printed circuit board (PCB) 601 is electrically connected, and aforesaid plain conductor 607 can be gold thread, silver-colored line, copper cash or aluminum steel.
At last; use transparent adhesive tape material 608 to cover on semiconductor light emitting crystal grain 606 and the many strip metals lead 607 as a protective layer by transfer formation (transfer-molding) or injection moulding modes such as (iniect-molding), the material of its transparent adhesive tape material 608 can be epoxy resin (epoxy) or silica gel (silicone gel).If use the transparent adhesive tape material to coat aforesaid a plurality of semiconductor light emitting crystal grain 606 and aforesaid many strip metals lead 607 separately, make aforesaid semiconductor light emitting crystal grain 606 only launch the electromagnetic radiation wavelength of monochromatic wavelength, also can comprise light-converting material 609 by aforesaid transparent adhesive tape material, aforesaid light-converting material 609 can be fluorescent material, aforementioned thus fluorescent material can be excited and produce second wavelength and and a wavelength producing of semiconductor light emitting crystal grain 606 mix and the formation white light or the electromagnetic radiation wavelength of other multi-wavelengths.Aforesaid fluorescent material comprises silicates, oxide family, nitride family or sulfide family.Please refer to shown in Fig. 6 (f).
In addition, can cover second layer transparent adhesive tape material 608 again after containing the glue material of light-converting material 609 at elder generation's coating ground floor on the sealing program, or cover the glue material that the second layer contains light-converting material 609 again after coating ground floor transparent adhesive tape material 608 earlier, same aforementioned lights transition material can be fluorescent material produce because of being excited second wavelength and and the electromagnetic radiation wavelength of wavelength mixing formation white light or other multi-wavelengths of 606 generations of semiconductor light emitting crystal grain, please refer to shown in Fig. 6 (g).
Its semiconductor light emitting crystal grain of the package module of aforesaid photoelectric cell also can use crystalline substance (Flip Chip) mode of covering except engaging (wirebonding) mode with routing.General semiconductor light emitting crystal grain flip chip structure please refer to shown in Fig. 7 (b), dispose weld pad (bonding pad) 712 on the subbase seat 713, semiconductor light emitting crystal grain 710 disposes projection 711, when semiconductor light emitting crystal grain 710 is overlying on submounts 713, aforesaid projection 711 can be connected with its corresponding pad (bonding pad) 712, and semiconductor light emitting crystal grain 710 electrically connects by projection 711 and weld pad 712.
The package module step of manufacturing of its crystal covering type photoelectric cell comprises: please refer to shown in Fig. 7 (c), in order to improve the heat dissipation problem of package module, the invention provides a heat-radiating substrate and improve the overheated problem of package module, its heat-radiating substrate 703 can be copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminium silicon carbide (AlSiC), aluminium nitride (AlN), silicon (Si) beryllium oxide (BeO), diamond or the close metal material of other coefficients of expansion semiconductor light emitting crystal grain a plurality of with it.Form a dielectric layer 704 on aforesaid heat-radiating substrate with ejection forming technique again, aforesaid dielectric layer 704 has the aforesaid heat-radiating substrate 703 of a plurality of recesses 705 with exposed portions serve, the recess 705 of its dielectric layer 704 is a hollow reflector, can be as the resilient coating and the reflector of storeroom thermal stress, and the brightness of increase semiconductor light emitting crystal grain, its material can be polyphthalamide (Polyphthalamide; PPA) or poly-butine (PPB).General ejection formation program mainly contains five programs, (1) warm-up phase (Preheating): this stage comprises the material of baking in advance, preheating and the mold heated of plastic cement.Baking material promptly is heated to plastics in advance and is lower than about 10～15 ℃ of glass transition temperature (Glass Transition Temperature) with materal drier in advance, keeps a period of time and has removed moisture in the plastics.Preheating reaches the screw rod that heats Jet forming machine in advance, and rotating screw bolt is clamp-oned plastics the ejaculation of preparing plastic in the plunger again.This moment simultaneously also heating mould to reach the mold temperature when penetrating.(2) the filling stage (Filling): utilize oil pressure pressure lead-screw or plunger, the plastics of fusion are extruded, inject in the mould,, be filled with the whole spaces of whole die cavity via running channel, runner, entrance die cavity.(3) packing stage (Packing): after plasticizing is full of die cavity fully, grant high pressure to inject more plastics, the pressurize purpose has two: after (a) filling is finished, avoid plastics to flow backwards because of cooled and solidified.(b) make in the die cavity plastics keep high pressure, can not separate because cooling is shunk between plastics and die wall, maintenance is close to each other, makes the moulding product more fine and close, makes plastics can duplicate in the die cavity shape fully not because of the contraction distortion.(4) cooling stage (Cooling): wait for that plastics are cooled to mold temperature fully in the die cavity, make the plastics can full solidification, reach certain intensity, be stained with glutinous mould because of plastics when avoiding die sinking and produce distortion.(5) the die sinking stage (Mold Open): open mould, the moulding product by drawing the material pin to pull out the fixation side die face, are then ejected movable side form face with knock pin, the moulding product are dropped naturally.Five steps of repetitive cycling (1)～(5) are the cycle period of whole ejection formation.
Please refer to shown in Fig. 7 (d), use elargol to be fixed on the heat-radiating substrate 703 a plurality of brilliant semiconductor light emitting crystal grain 706 that cover, aforesaid semiconductor light emitting crystal grain 706 can be light-emitting diode, lasing fluorescence diode or light sensing crystal grain.
Please refer to shown in Fig. 7 (e), it is that adhesive agent is attached to aforesaid dielectric layer 704 tops with epoxy resin (epoxy) that one printed circuit board (PCB) 701 with porous is provided, and a plurality of recesses of its a plurality of holes 701 and aforesaid dielectric layer 704 705 are corresponding and expose a plurality of brilliant semiconductor light emitting crystal grain 706 that cover.Aforementioned printed circuit board (PCB) with porous, its basic manufacturing technology can be divided into subraction (Subtractive) and addition process (Additive) two class processes, and the multilayer manufacturing technology comprises two kinds of lamination method and Layer increasing methods in addition.Subraction is to utilize chemicals or machinery that the circuit board (promptly being covered with the circuit board of complete one metal forming) of blank is gone up unwanted place to remove, and remaining place is a circuitry needed.And addition process generally is to plate in advance on the substrate that approaches copper at one now, cover photoresist (D/F), develop again through ultraviolet photoetching, the place that needs is exposed, utilize to electroplate then and thicken needed specification formal circuit copper on the wiring board is thick, plate the anti-etching resistance agent of one deck-metal foil tin again, remove photoresist (this technology is called striping) at last, again the copper foil layer under the photoresist is etched away.Lamination method is one of method of making multilayer board, is just to wrap skin after making internal layer, skin is handled with subraction or addition process again, constantly repeats the action of lamination, and available multilayer board then is the sequential lamination method.Layer increasing method is one of method of making multilayer board, as the term suggests be printed circuit board (PCB) adding in layer.Whenever adding last layer just handles to required shape.After selecting the manufacture process of above-mentioned a kind of printed circuit board (PCB) and finishing, its hole is preferably in circuit layout and electroplates the first being processed operation and finish, can reduce boring destroys the electrodeposited coating on circuit distribution and surface or makes the plate face impaired because of producing stress, its hole can carry out with the CNC bore mode, and the size of aforesaid hole 501 must conform to the recess of dielectric layer recess, as please refer to shown in Fig. 7 (a).
Please refer to shown in Fig. 7 (f), many strip metals lead 707 engages (wire bonding) technology via routing will aforesaidly cover weld pad 712 and aforesaid printed circuit board (PCB) 701 electric connections on the submounts of brilliant semiconductor light emitting crystal grain 706, and aforesaid plain conductor 707 can be gold thread, silver-colored line, copper cash or aluminum steel.
At last; use transparent adhesive tape material 708 to cover on brilliant semiconductor light emitting crystal grain 706 and the many strip metals lead 707 as a protective layer by transfer formation (transfer-molding) or injection moulding modes such as (inject-molding), the material of its transparent adhesive tape material 708 can be epoxy resin (epoxy) or silica gel (silicone gel).If use the transparent adhesive tape material to coat aforesaid a plurality of semiconductor light emitting crystal grain 706 and aforesaid many strip metals lead 707 separately, make aforesaid semiconductor light emitting crystal grain 706 only launch the electromagnetic radiation wavelength of monochromatic wavelength, also can comprise light-converting material 709 by aforesaid transparent adhesive tape material, aforesaid light-converting material 709 can be fluorescent material, and aforementioned thus fluorescent material can be excited and produce second wavelength and form the white light or the electromagnetic radiation wavelength of other multi-wavelengths with a wavelength mixing covering brilliant semiconductor light emitting crystal grain 706 generations.Aforesaid fluorescent material comprises silicates, oxide family, nitride family or sulfide family.Please refer to shown in Fig. 7 (g).
In addition, can cover second layer transparent adhesive tape material 708 again after containing the glue material of light-converting material 709 at elder generation's coating ground floor on the sealing program, or cover the glue material that the second layer contains light-converting material 709 again after coating ground floor transparent adhesive tape material 608 earlier, same aforementioned lights transition material can be fluorescent material and produces second wavelength because of being excited and mix the electromagnetic radiation wavelength that forms white light or other multi-wavelengths with a wavelength that covers brilliant semiconductor light emitting crystal grain 706 generations, please refer to shown in Fig. 7 (h).
Apparently, according to the description among the top embodiment, the present invention has many corrections and difference.Therefore need be understood in its appended claim institute restricted portion, except above-mentioned detailed description, the present invention can also implement in other embodiment widely.Above-mentioned is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the identity property of being finished under the disclosed spirit and changes or modification, all should be included in the appended claim institute restricted portion.
Claims (11)
1. the package module of a photoelectric cell comprises
One heat-radiating substrate;
One dielectric layer is positioned at this heat-radiating substrate top, has a plurality of recesses this heat-radiating substrate in order to exposed portions serve;
A plurality of semiconductor light emitting crystal grain are positioned at the recess of this dielectric layer and are fixed on this heat-radiating substrate;
One has the printed circuit board (PCB) of a plurality of holes, and its hole corresponds to the recess of this dielectric layer, covers on this dielectric layer and exposes this a plurality of semiconductor light emitting crystal grain;
Many strip metals lead should a plurality of semiconductor light emitting crystal grain and this printed circuit board (PCB) electrically connect; And
One transparent adhesive tape material is in order to coat these a plurality of semiconductor light emitting crystal grain and this many strip metals lead.
2. encapsulating module of photoelectric element as claimed in claim 1, wherein this semiconductor light emitting crystal grain is light-emitting diode, lasing fluorescence diode or light sensing crystal grain, and the mode that this semiconductor light emitting crystal grain is fixed on this heat-conducting substrate comprises use elargol or eutectic juncture.
3. encapsulating module of photoelectric element as claimed in claim 2, wherein the recess of this dielectric layer is a hollow reflector, and the material of this dielectric layer is polyphthalamide or poly-butine.
4. encapsulating module of photoelectric element as claimed in claim 2, wherein the material of this heat-radiating substrate is copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper, tungsten-copper, aluminium silicon carbide, aluminium nitride, silicon, beryllium oxide, diamond or other coefficients of expansion and the close metal material of these a plurality of semiconductor light emitting crystal grain.
5. encapsulating module of photoelectric element as claimed in claim 2 also comprises light-converting material and is blended in this transparent adhesive tape material, and wherein this light-converting material is a fluorescent material, and this fluorescent material is silicates, oxide family, nitride family or sulfide family.
6. the package module manufacture method of a photoelectric cell, its step comprises:
One heat-radiating substrate is provided;
Form a dielectric layer on this heat-radiating substrate;
Form a printed circuit board (PCB) on this dielectric layer;
A plurality of semiconductor light emitting crystal grain are fixed on the heat-radiating substrate;
Many strip metals lead electrically connects this semiconductor light emitting crystal grain and this printed circuit board (PCB); And
One transparent adhesive tape material is in order to coat these a plurality of semiconductor light emitting crystal grain and this many strip metals lead;
Wherein above-mentioned dielectric layer has a plurality of recesses this heat-radiating substrate with exposed portions serve, this printed circuit board (PCB) has a plurality of holes, its a plurality of holes are corresponding with a plurality of recesses of this dielectric layer, and in the recess of these a plurality of semiconductor light emitting crystal grain corresponding to this dielectric layer.
7. the package module manufacture method of a photoelectric cell, its step comprises:
One heat-radiating substrate is provided;
Form a dielectric layer on this heat-radiating substrate, wherein this dielectric layer comprises a plurality of recesses;
Cover in the recess that brilliant semiconductor light emitting crystal grain is positioned over this dielectric layer respectively and be fixed on this heat-radiating substrate a plurality of;
Form the printed circuit board (PCB) of a plurality of holes of a tool, this hole corresponds to the recess of the recess of this dielectric layer, covers on this dielectric layer, exposes this and covers brilliant semiconductor light emitting crystal grain;
The submounts of the electric connected crystal covered semiconductor light emitting crystal grain of many strip metals lead and this printed circuit board (PCB); And
One transparent adhesive tape material is in order to coat this a plurality of brilliant semiconductor light emitting crystal grain and these many strip metals leads of covering.
8. as claim 6 or 7 described encapsulating module of photoelectric element manufacture methods, wherein this semiconductor light emitting crystal grain is light-emitting diode, lasing fluorescence diode or light sensing crystal grain, and the method that this semiconductor light emitting crystal grain is fixed on this heat-conducting substrate comprises use elargol or eutectic juncture.
9. encapsulating module of photoelectric element manufacture method as claimed in claim 8, wherein the recess of this dielectric layer is a hollow reflector, and the material of this dielectric layer is polyphthalamide or poly-butine.
10. encapsulating module of photoelectric element manufacture method as claimed in claim 8, wherein the material of this heat-radiating substrate is copper, nickel, silver, lead, gold or aforementioned metal alloy, or copper-molybdenum-copper, tungsten-copper, aluminium silicon carbide, aluminium nitride, silicon, beryllium oxide, diamond or other coefficients of expansion and the close metal material of these a plurality of semiconductor light emitting crystal grain.
11. encapsulating module of photoelectric element manufacture method as claimed in claim 8, also comprising light-converting material is blended in this transparent adhesive tape material, wherein this light-converting material is a fluorescent material, and this fluorescent material is silicates, oxide family, nitride family or sulfide family.
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