CN201681927U - High-power LED chip integrated encapsulating structure - Google Patents
High-power LED chip integrated encapsulating structure Download PDFInfo
- Publication number
- CN201681927U CN201681927U CN201020122831.3U CN201020122831U CN201681927U CN 201681927 U CN201681927 U CN 201681927U CN 201020122831 U CN201020122831 U CN 201020122831U CN 201681927 U CN201681927 U CN 201681927U
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- CN
- China
- Prior art keywords
- led chip
- base
- interlayer
- circuit board
- optical lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- Led Device Packages (AREA)
Abstract
The utility model discloses a high-power LED chip integrated encapsulating structure, which comprises a base, a circuit board, a sandwich layer, an optical lens and a cover board, wherein the base comprises a chip fixing region, the circuit board is positioned on the base and is connected with a plurality of LED chips, the sandwich layer is positioned on the base, the sandwich layer is hollow in the middle so as to expose the LED chips, the optical lens is positioned above the sandwich layer and shields the LED chips, the cover plate is hollow in the middle and is positioned above the optical lens, and the cover plate and the sandwich layer fix the optical lens. The high-power LED chip integrated encapsulating structure, provided by the utility model, has the advantages of good heat radiation, convenient installation, good light taking effect and integration of chip encapsulation, heat radiation and light emitting.
Description
Technical field
The utility model relates to a kind of integrated encapsulation technology of high-power LED chip.
Background technology
As shown in Figure 1, traditional high-power LED chip integrated encapsulation structure generally is that some low-power LED chips are integrated on the big metal heat sink.Because the cause of total reflection, the part light that this encapsulating structure sends can not shine outside air, and the reflected back colloid, as shown in Figure 2.And the actual transmitance of colloid is generally about 90%, and the major part in the remaining energy changes into heat energy, and led chip continues when luminous also constantly to heat to colloid to colloid transmission heat in lighting process.
In the illumination commonly used, the white light LEDs conventional process is to excite yellow fluorescent powder to mix with blue-light LED chip to produce white light, and wherein yellow fluorescent powder generally is entrained in the packaging plastic.Along with the rising of packaging plastic temperature, the colour temperature of whole bright dipping will be drifted about, and directly influences illuminating effect.After the colloid heating, the character of glue itself changes, and refractive index changes, thereby changes rising angle.In addition, the specific heat capacity of colloid and inner bonding gold wire differs bigger, after colloid is overheated, may produce bigger internal stress, and the reliability that LED is encapsulated finished product also has certain influence.
Summary of the invention
The utility model is intended to overcome above-mentioned shortcoming, provide a kind of dispel the heat good, install convenient, go out the good high-power LED chip integrated encapsulation structure of light effect.
A kind of high-power LED chip integrated encapsulation structure comprises base, circuit board, interlayer, optical lens, cover plate: described base comprises that the chip fixed area is used for fixing some led chips; Described circuit board is positioned at and connects described some led chips on the base; Described interlayer is positioned on the base, and hollow out in the middle of the interlayer is to expose led chip; Described optical lens is positioned on the interlayer and blocks led chip; Hollow out in the middle of the described cover plate is positioned on the optical lens, and cover plate is with interlayer fixed optics lens.
Described base, interlayer, the material of cover plate are copper, the alloy of aluminium or above-mentioned two kinds of metals.
Adopt the good glue of heat conduction described led chip to be fixed on the chip fixed area of base, general led chip is with square or circular distribution proper alignment, and lead (as spun gold etc.) that have high ductibility good with conductance connects the pin input end of led chip circuit board, and circuit board pin output links to each other with external power source.
Described circuit board is made of an insulated substrate and conductive pattern.
Described interlayer, it is the I shape of middle hollow out, after interlayer is fixed on the base, forms a spill, is used for filling encapsulation glue therebetween.
Described encapsulation glue is silica gel, is doped with the fluorescent material that mixes by a certain percentage in it.
After encapsulation glue is pressed certain condition curing, begin to install optical lens.
Described optical lens is that optical glass or other light transmissive materials are made, and the plane of incidence that its bottom is a light is the plane.
Evenly apply one deck packaging plastic in the optical lens bottom, entirely paste and be placed on the packing colloid surface of having solidified, buckle the led support cover plate.
In the middle of the described led support cover plate is the rectangle of hollow out.
It is good that the high-power LED encapsulation structure that the utility model proposes has heat radiation, and it is convenient to install, and it is good to get light effect, collection Chip Packaging, heat radiation, the incorporate advantage of bright dipping.
Description of drawings
Fig. 1 tradition high-power LED chip integrated encapsulation structure
Fig. 2 tradition high-power LED chip integrated encapsulation structure goes out the light effect schematic diagram
Fig. 3 high-power LED chip integrated encapsulation structure of the present invention
Fig. 4 high-power LED chip integrated encapsulation structure of the present invention
Fig. 5 high-power LED chip integrated encapsulation structure of the present invention
Embodiment
Below in conjunction with accompanying drawing content of the present invention is further specified.
A kind of high-power LED chip integrated encapsulation structure, as shown in Figure 3, comprise base (5), circuit board (4), interlayer (3), optical lens (2), cover plate (1): described base (5) comprises that chip fixed area (7) is used for fixing some led chips; Described circuit board (4) is positioned at and connects described some led chips on the base; Described interlayer (3) is positioned on the base (5), and hollow out in the middle of the interlayer (3) is to expose led chip; Described optical lens (2) is positioned on the interlayer (3) and blocks led chip; Hollow out in the middle of the described cover plate (1) is positioned on the optical lens (2), and the edge at cover plate (1) hollow out place covers the edge of optical lens (2), the same interlayer of cover plate (1) (3) fixed optics lens (2).
Described base (5), interlayer (3), cover plate (1) material are the alloy of copper, aluminium or above-mentioned two kinds of metals.
Adopt the good glue of heat conduction described led chip (10) to be fixed on the chip fixed area (7) of base (5), as shown in Figure 4, general led chip is with square or circular distribution proper alignment, and lead (11) (as spun gold etc.) that have high ductibility good with conductance connects the pin input end (8) of led chip (10) circuit board, as shown in Figure 5, circuit board pin output (9) links to each other with external power source, can the row's of use pin or other connectors directly connect.
Described circuit board (4) is made of an insulated substrate and conductive pattern.
Described interlayer (3), the I shape (6) of hollow out in the middle of it is characterized in that is fixed on after base (5) goes up at interlayer (6), forms a spill, is used for therebetween filling encapsulating glue.
Described encapsulation glue is silica gel, is doped with the fluorescent material that mixes by a certain percentage in it.
After encapsulation glue is pressed certain condition curing, begin to install optical lens (2).
Described optical lens (2) is because optical glass or other light transmissive materials are made, and the plane of incidence that its bottom is a light is the plane.
Evenly apply one deck packaging plastic in the optical lens bottom, entirely paste and be placed on the packing colloid surface of having solidified, buckle led support cover plate (1).
In the middle of the described led support cover plate (1) is the rectangle of hollow out.
What should be understood that is: the foregoing description is just to explanation of the present utility model, rather than to restriction of the present utility model, any innovation and creation that do not exceed in the utility model connotation scope all fall within the utility model protection range.
Claims (6)
1. high-power LED chip integrated encapsulation structure, it is characterized in that comprising base, circuit board, interlayer, optical lens, cover plate: described base comprises the chip fixed area; Described circuit board is positioned at and connects described some led chips on the base; Described interlayer is positioned on the base, and hollow out is to expose led chip in the middle of the interlayer; Described optical lens is positioned on the interlayer and blocks led chip; Hollow out in the middle of the described cover plate is positioned on the optical lens, and cover plate is with interlayer fixed optics lens.
2. high-power LED chip integrated encapsulation structure according to claim 1 is characterized in that described led chip is fixed on the chip fixed area of base.
3. high-power LED chip integrated encapsulation structure according to claim 1, it is characterized in that led chip is with square or circular distribution proper alignment, and lead that have high ductibility good with conductance connects the pin input end of led chip circuit board, and circuit board pin output links to each other with external power source.
4. high-power LED chip integrated encapsulation structure according to claim 1 is characterized in that described circuit board, is made of an insulated substrate and conductive pattern.
5. high-power LED chip integrated encapsulation structure according to claim 1 is characterized in that described interlayer, its be in the middle of the I shape of hollow out, after interlayer is fixed on the base, form a spill.
6. as claim 1 high-power LED chip integrated encapsulation structure, it is characterized in that being the rectangle of hollow out in the middle of the described led support cover plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020122831.3U CN201681927U (en) | 2010-03-04 | 2010-03-04 | High-power LED chip integrated encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020122831.3U CN201681927U (en) | 2010-03-04 | 2010-03-04 | High-power LED chip integrated encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201681927U true CN201681927U (en) | 2010-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020122831.3U Expired - Fee Related CN201681927U (en) | 2010-03-04 | 2010-03-04 | High-power LED chip integrated encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201681927U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347324A (en) * | 2011-09-30 | 2012-02-08 | 常熟市广大电器有限公司 | Novel LED (light-emitting diode) integrated packaging structure |
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN112151657A (en) * | 2020-10-16 | 2020-12-29 | 佛山市馨园照明科技有限公司 | Packaging structure of LED lamp for sow breeding and using method thereof |
-
2010
- 2010-03-04 CN CN201020122831.3U patent/CN201681927U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347324A (en) * | 2011-09-30 | 2012-02-08 | 常熟市广大电器有限公司 | Novel LED (light-emitting diode) integrated packaging structure |
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN112151657A (en) * | 2020-10-16 | 2020-12-29 | 佛山市馨园照明科技有限公司 | Packaging structure of LED lamp for sow breeding and using method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101222 Termination date: 20170304 |
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| CF01 | Termination of patent right due to non-payment of annual fee |