CN103346245A - White light LED and preparing method - Google Patents
White light LED and preparing method Download PDFInfo
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- CN103346245A CN103346245A CN2013102580331A CN201310258033A CN103346245A CN 103346245 A CN103346245 A CN 103346245A CN 2013102580331 A CN2013102580331 A CN 2013102580331A CN 201310258033 A CN201310258033 A CN 201310258033A CN 103346245 A CN103346245 A CN 103346245A
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- white light
- light leds
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- red fluorescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
A white light LED comprises a support and a blue wafer, and further comprises a gold wire, wherein the support is provided with a groove, the blue wafer is fixed to the bottom of the groove of the support, one end of the gold wire is welded to the blue wafer, and the other end of the gold wire is welded to the support. The white light LED further comprises a fluorescent powder layer which is coated on and covers the inside of the whole groove of the support. The preparing method includes the steps that the blue wafer is fixed to the bottom of the groove of the support through a die attach adhesive; one end of the gold wire is welded to the blue wafer, and the other end of the gold wire is welded to the support; red fluorescent powder and green fluorescent powder are taken to be uniformly mixed with an adhesive; the mixture of the red fluorescent powder, the green fluorescent powder and the adhesive is coated on and wraps the inside of the whole groove of the support, and forms the fluorescent powder layer after baking and solidification. The white light LED has the advantages of being high in color rendering index, high in luminous efficacy and low in cost.
Description
Technical field
The present invention relates to the led technology field, particularly a kind of white light LEDs and preparation method.
Background technology
Along with the lifting of light-emitting diode (LED) chip and encapsulation technology, white light LEDs progressively is subjected to people's favor as the general lighting light source.It has series of advantages such as low pressure, low-power consumption, high reliability, long-life, has been widely used in fields such as LED street lamp, LED light fixture, is a kind of green new light sources that meets country's " energy-saving and emission-reduction " policy.In September, 2009, European Union takes the lead in putting into effect the policy that incandescent lamp prohibits selling, and various countries also issue the process that prohibits selling one after another, make white light LEDs push ahead major step again to general lighting especially room lighting.Yet the color rendering of white light LEDs is the technical bottleneck of restriction its inlet chamber intraoral illumination, particularly reading lighting, medical illumination.
At present, the high color rendering index and high illumination efficiency white light LEDs is one of research focus of domestic and international enterprise and scientific research institutions, and the main method of existing preparation white light LEDs has:
1. red, green, blue (RGB) three-color LED chip produces the broad band white light.This method can prepare the white light that colour temperature covers 2700K-13000K, and can realize that color rendering index is up to the white light more than 90 by the integrated design of multi-chip.But the encapsulating structure of this method and drives complexity, RGB three color chip light decays are inconsistent, cause the poor stability of product, and cost are higher.
2. near ultraviolet LED (UV-LED) chip excites RGB fluorescent material to produce white light.This method can realize color rendering index up to 90 warm white by the fluorescent material proportioning, but has near ultraviolet LED chip cost height, and efficient is low, has ultraviolet leakage and makes encapsulating material aging easily, the life-span of reduction white light LEDs.
3.InGaN basic blue-light LED chip excitation rare-earth fluorescent material prepares the white light LEDs of various colour temperatures.
At present, the third method is the main flow mode of preparation white light LEDs.Employing InGaN(InGaN) basic blue-light LED chip excites the YAG:Ce3+ yellow fluorescent powder, is difficult to be implemented in the following white light LEDs that hangs down the high-color rendering of colour temperature and Ra＞90 of 4000K.The deficiency of monochromatic fluorescent material for a change, once the someone adopts blue-light LED chip to excite white light LEDs yellow and that red fluorescence powder obtains in the industry, its Tc and Ra are respectively 3200K and 83.2, but because the emission peak wavelength of blue-ray LED and the excitation spectrum of red fluorescence powder do not match, cause the luminous flux of device and luminous efficiency lower.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of white light LEDs and preparation method, have color rendering index height, light efficiency height, characteristics that cost is low.
In order to achieve the above object, the technical scheme taked of the present invention is:
A kind of white light LEDs comprises the support 1 that is provided with groove and the blue wafer 2 that is fixed on support 1 bottom portion of groove; Described white light LEDs also comprises gold thread 3, and an end of described gold thread 3 is welded on the blue wafer 2, and the other end is welded on the support 1; Described white light LEDs also comprises phosphor powder layer 4, and described phosphor powder layer 4 is smeared and covered in entire bracket 1 groove.
Described blue wafer 2 is fixed on the described support 1 by crystal silicon glue 5.
Described phosphor powder layer 4 is made up of red fluorescence powder, green emitting phosphor and adhesive.
Described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
The wavelength of described blue wafer 2 is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
Described adhesive is organic silica gel.
A kind of preparation method of white light LEDs comprises:
Blue wafer 2 is fixed on the bottom portion of groove of support 1 with crystal-bonding adhesive 5;
One end of gold thread 3 is welded on the blue wafer 2, and the other end is welded on the support 1;
Getting red fluorescence powder, green emitting phosphor and adhesive mixing mixes well;
The mixture of deployed red fluorescence powder, green emitting phosphor and adhesive is smeared and covered in entire bracket 1 groove, and the mixture thickness of smearing will cover gold thread 3;
Be under 50-150 degree centigrade the condition, to toast after 5-6 hour in temperature, mixture solidified forms phosphor powder layer 4.
Described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
The wavelength of described blue wafer 2 is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
Described adhesive is organic silica gel.
Beneficial effect of the present invention is:
The white light LEDs that adopts the present invention to prepare, reference color temperature is between 2700-6500K, and color rendering index reaches 85-95, and luminous efficiency is higher than 801m/W.The advantage of this method is to obtain the adjustable color temperature of certain limit by the ratio of adjusting two kinds of fluorescent material, and guarantees that color rendering index reaches 85-95.Simultaneously, excitation wavelength and the emission wavelength of each fluorescent material mate mutually, and excitated fluorescent powder is luminous to greatest extent, guarantee that luminous efficiency is more than 80lm/W.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the spectrogram of embodiments of the invention two.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.
A kind of white light LEDs comprises the support 1 that is provided with groove and the blue wafer 2 that is fixed on support 1 bottom portion of groove; Described white light LEDs also comprises gold thread 3, and an end of described gold thread 3 is welded on the blue wafer 2, and the other end is welded on the support 1; Described white light LEDs also comprises phosphor powder layer 4, and described phosphor powder layer 4 is smeared and covered in entire bracket 1 groove.
Described blue wafer 2 is fixed on the described support 1 by crystal silicon glue 5.
Described phosphor powder layer 4 is made up of red fluorescence powder, green emitting phosphor and adhesive.
Described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
The wavelength of described blue wafer 2 is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
Described adhesive is organic silica gel.
A kind of preparation method of white light LEDs comprises:
Blue wafer 2 is fixed on the bottom portion of groove of support 1 with crystal-bonding adhesive 5;
One end of gold thread 3 is welded on the blue wafer 2, and the other end is welded on the support 1;
Getting red fluorescence powder, green emitting phosphor and adhesive mixing mixes well;
The mixture of deployed red fluorescence powder, green emitting phosphor and adhesive is smeared and covered in entire bracket 1 groove, and the mixture thickness of smearing will cover gold thread 3;
Be under 50-150 degree centigrade the condition, to toast after 5-6 hour in temperature, mixture solidified forms phosphor powder layer 4.
Described red fluorescence powder, green emitting phosphor and the adhesive got mixes and mixes well, and comprising: described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
The wavelength of described blue wafer 2 is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
Described adhesive is organic silica gel.
As shown in Figure 1, the present invention includes support 1, blue wafer 2, gold thread 3, phosphor powder layer 4 and crystal-bonding adhesive 5.Fluorescent material in the phosphor powder layer 4 is mixed by red fluorescence powder and green emitting phosphor, requires the different different proportion allotments of pressing according to preparation, and wherein, the wavelength of blue wafer is 450nm-460nm.The wavelength of red fluorescence powder is 610nm-640nm.The wavelength of green emitting phosphor is respectively 515nm-535nm.Described phosphor powder layer 4 by the mixture of adhesive and fluorescent material by weight percentage, the allotment ratio of described red fluorescence powder and green emitting phosphor is 0.5-4.0%:10-35%, surplus is adhesive.By changing various wave band fluorescent material spectral energy proportions, thereby change colour temperature and color rendering index.
The present invention makes by following steps: the bottom portion of groove that blue wafer 2 is fixed on support 1 with crystal-bonding adhesive 5;
One end of gold thread 3 is welded on the blue wafer 2, and the other end is welded on the support 1;
Getting red fluorescence powder, green emitting phosphor and adhesive mixing mixes well;
The mixture of deployed red fluorescence powder, green emitting phosphor and adhesive is smeared and covered in entire bracket 1 groove, and the mixture thickness of smearing will cover gold thread 3;
Be under 50-150 degree centigrade the condition, to toast after 5-6 hour in temperature, mixture solidified forms phosphor powder layer 4.
Embodiment one
White light LEDs according to the present invention's preparation, adopting excitation wavelength is the LED blue chip of 457.5nm, the collocation emission wavelength is that green emitting phosphor and the emission wavelength of 528nm is the 630nm red fluorescence powder, it makes correlated colour temperature is 5750K, wherein the weight proportion of red fluorescence powder and green emitting phosphor is 1.69%:10.81%, and surplus is adhesive.This moment color rendering index 91, luminous efficiency 86.8lm/W.
Embodiment two
White light LEDs according to the present invention's preparation, adopting excitation wavelength is the LED blue chip of 457.5nm, the collocation emission wavelength is that green emitting phosphor and the emission wavelength of 528nm is the 630nm red fluorescence powder, it makes correlated colour temperature is 5750K, wherein the weight proportion of red fluorescence powder and green emitting phosphor is 1.6%:10.7%, and surplus is adhesive.This moment color rendering index 92, luminous efficiency 90.5lm/W.Fig. 2 is the spectrogram of present embodiment.
Embodiment three
White light LEDs according to the present invention's preparation, adopting excitation wavelength is the LED blue chip of 457.5nm, the collocation emission wavelength is that green emitting phosphor and the emission wavelength of 528nm is the 625nm red fluorescence powder, it makes correlated colour temperature is 5750K, wherein the weight proportion of red fluorescence powder and green emitting phosphor is 1.0%:10.0%, and surplus is adhesive.This moment color rendering index 92.5, luminous efficiency 95lm/W.
The above only is 3 kinds of execution modes of the present invention, it or not whole or unique execution mode, the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading specification of the present invention is claim of the present invention and contains.
Claims (10)
1. white light LEDs is characterized in that: comprise the support (1) that is provided with groove and be fixed on the blue wafer (2) of support (1) bottom portion of groove; Described white light LEDs also comprises gold thread (3), and an end of described gold thread (3) is welded on the blue wafer (2), and the other end is welded on the support (1); Described white light LEDs also comprises phosphor powder layer (4), and described phosphor powder layer (4) is smeared and covered in entire bracket (1) groove.
2. a kind of white light LEDs according to claim 1, it is characterized in that: described blue wafer (2) is fixed on the described support (1) by crystal silicon glue (5).
3. a kind of white light LEDs according to claim 1, it is characterized in that: described phosphor powder layer (4) is made up of red fluorescence powder, green emitting phosphor and adhesive.
4. according to the described a kind of white light LEDs of claim 1-3, it is characterized in that: described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
5. according to the described a kind of white light LEDs of claim 1-3, it is characterized in that: the wavelength of described blue wafer (2) is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
6. according to the described a kind of white light LEDs of claim 1-3, it is characterized in that: described adhesive is organic silica gel.
7. the preparation method of a white light LEDs is characterized in that, comprising:
Blue wafer (2) is fixed on the bottom portion of groove of support (1) with crystal-bonding adhesive (5);
One end of gold thread (3) is welded on the blue wafer (2), and the other end is welded on the support (1);
Getting red fluorescence powder, green emitting phosphor and adhesive mixing mixes well;
The mixture of deployed red fluorescence powder, green emitting phosphor and adhesive is smeared and covered in entire bracket (1) groove, and the mixture thickness of smearing will cover gold thread (3);
Be under 50-150 degree centigrade the condition, to toast after 5-6 hour in temperature, mixture solidified forms phosphor powder layer (4).
8. a kind of white light LEDs according to claim 7, it is characterized in that: described red fluorescence powder and green emitting phosphor according to the allotment ratio of weight percent meter are: 0.5-4.0%:10-35%, surplus is adhesive.
9. according to the described a kind of white light LEDs of claim 7-8, it is characterized in that: the wavelength of described blue wafer (2) is 450nm-460nm; The wavelength of described red fluorescence powder is 610nm-640nm; The wavelength of described green emitting phosphor is respectively 515nm-535nm.
10. according to the described a kind of white light LEDs of claim 7-8, it is characterized in that: described adhesive is organic silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102580331A CN103346245A (en) | 2013-06-25 | 2013-06-25 | White light LED and preparing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013102580331A CN103346245A (en) | 2013-06-25 | 2013-06-25 | White light LED and preparing method |
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| CN103346245A true CN103346245A (en) | 2013-10-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952861A (en) * | 2014-03-27 | 2015-09-30 | 江苏稳润光电有限公司 | Low-cost, high-brightness and large-power white light LED |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1289456A (en) * | 1998-11-30 | 2001-03-28 | 通用电气公司 | Light emitting device with phosphor composition |
| CN1464569A (en) * | 2002-06-26 | 2003-12-31 | 诠兴开发科技股份有限公司 | Process for making three wavelengh white light light-emitting diode |
| CN101068034A (en) * | 2007-01-11 | 2007-11-07 | 宁波安迪光电科技有限公司 | Packaging method for white light illuminating diode |
| CN102244185A (en) * | 2011-07-19 | 2011-11-16 | 彩虹集团公司 | White light LED (light emitting diode) with high color rendering index, high light efficiency and low color temperature and preparation method thereof |
-
2013
- 2013-06-25 CN CN2013102580331A patent/CN103346245A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1289456A (en) * | 1998-11-30 | 2001-03-28 | 通用电气公司 | Light emitting device with phosphor composition |
| CN1464569A (en) * | 2002-06-26 | 2003-12-31 | 诠兴开发科技股份有限公司 | Process for making three wavelengh white light light-emitting diode |
| CN101068034A (en) * | 2007-01-11 | 2007-11-07 | 宁波安迪光电科技有限公司 | Packaging method for white light illuminating diode |
| CN102244185A (en) * | 2011-07-19 | 2011-11-16 | 彩虹集团公司 | White light LED (light emitting diode) with high color rendering index, high light efficiency and low color temperature and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952861A (en) * | 2014-03-27 | 2015-09-30 | 江苏稳润光电有限公司 | Low-cost, high-brightness and large-power white light LED |
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Application publication date: 20131009 |