CN107248511B - Three-primary-color white light LED with low-spinor rhythm factor - Google Patents
Three-primary-color white light LED with low-spinor rhythm factor Download PDFInfo
- Publication number
- CN107248511B CN107248511B CN201710483941.9A CN201710483941A CN107248511B CN 107248511 B CN107248511 B CN 107248511B CN 201710483941 A CN201710483941 A CN 201710483941A CN 107248511 B CN107248511 B CN 107248511B
- Authority
- CN
- China
- Prior art keywords
- chip
- red light
- light led
- blue light
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000033764 rhythmic process Effects 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 26
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims abstract description 17
- 230000017525 heat dissipation Effects 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000741 silica gel Substances 0.000 claims abstract description 13
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract 2
- 239000004332 silver Substances 0.000 claims abstract 2
- 238000001228 spectrum Methods 0.000 claims description 18
- 230000002596 correlated effect Effects 0.000 claims description 9
- 238000000295 emission spectrum Methods 0.000 claims description 4
- 230000006461 physiological response Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 230000004310 photopic vision Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000009877 rendering Methods 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000036541 health Effects 0.000 description 3
- 241000124008 Mammalia Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- JYGXADMDTFJGBT-VWUMJDOOSA-N hydrocortisone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 JYGXADMDTFJGBT-VWUMJDOOSA-N 0.000 description 2
- 230000000258 photobiological effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000003098 Ganglion Cysts Diseases 0.000 description 1
- YJPIGAIKUZMOQA-UHFFFAOYSA-N Melatonin Natural products COC1=CC=C2N(C(C)=O)C=C(CCN)C2=C1 YJPIGAIKUZMOQA-UHFFFAOYSA-N 0.000 description 1
- 208000005400 Synovial Cyst Diseases 0.000 description 1
- 150000004645 aluminates Chemical group 0.000 description 1
- 230000002567 autonomic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000027288 circadian rhythm Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229940088597 hormone Drugs 0.000 description 1
- 239000005556 hormone Substances 0.000 description 1
- 229960000890 hydrocortisone Drugs 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229960003987 melatonin Drugs 0.000 description 1
- DRLFMBDRBRZALE-UHFFFAOYSA-N melatonin Chemical compound COC1=CC=C2NC=C(CCNC(C)=O)C2=C1 DRLFMBDRBRZALE-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 210000000608 photoreceptor cell Anatomy 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000003860 sleep quality Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
A three-primary-color white light LED with a low spinor rhythm factor relates to an LED. The LED packaging structure comprises a heat dissipation base, a packaging body, a red light chip, an yttrium aluminum garnet fluorescent powder and silica gel mixture, a lens, a reflection cup, a blue light LED chip and a metal electrode; the heat dissipation base, the red light chip, the reflection cup and the blue light LED chip are arranged in the packaging body; the red light chip and the blue light LED chip are arranged on the heat dissipation base, 1 blue light LED chip is arranged in the middle of the heat dissipation base, and 4 red light chips are arranged around the blue light LED chip; the lens is packaging glass, and the inner wall of the reflecting cup is plated with silver; the yttrium aluminum garnet fluorescent powder and silica gel mixture are uniformly coated on the lower surface of the lens, the yttrium aluminum garnet fluorescent powder and silica gel mixture and the lens are arranged above the packaging body, two ends of the lens are in sealing contact with the packaging body, the anode and the cathode of the red light chip are respectively led to the metal electrodes in a lead bonding mode, and the metal electrodes are embedded in the packaging body.
Description
Technical Field
The invention relates to an LED, in particular to a tricolor white light LED with a low schmitt rhythm factor based on a tricolor mixing principle.
Background
As a new generation of lighting technology, white Light Emitting Diodes (LEDs) have the advantages of energy saving, environmental protection, long life, small size, etc., and are widely used in the fields of indoor lighting, outdoor lighting, backlight display, automotive lighting, decoration, etc. There are currently three main implementations of white LEDs. The first is aluminate phosphor powder based on gallium nitride material blue light LED excited yellow green yttrium aluminum garnet, which is the mainstream form in the market at present, but the white light LED of this mode has relatively low cost, but the color-rendering index (Ra) is not high, and the Correlated Color Temperature (CCT) is high. The second is a white LED using three single primary LED chips, i.e., red, green, and blue chips. The white light LED in the mode has high cost, and the light color of the white light is easy to fluctuate along with the unstable change of the current. The third mode is that the near ultraviolet LED excites the three-primary-color fluorescent powder. The technology of the current mode is relatively immature, and the cost of the ultraviolet light chip is high. The proper addition of a red chip or red phosphor to the white LED of the first mode can significantly improve color rendering and dynamically adjust color temperature.
In 2002, Berson et al, university of Brown, USA, discovered a third type of photoreceptor cells of mammalian retina-retinal autonomic photoreceptor ganglion cells (ipRGCs) [ Berson DM, Science 295(5557),1070(2002) ]. The cells receive external light to influence the synthesis of hormones such as melatonin and cortisol in the body of the mammal, and further influence the circadian rhythm of the mammal. The cheyne rhythm is very important for the sleep quality and the human immunity of people. In 2002, Gall proposed a spectral physiological response curve associated with the spinor rhythm (d.gall, Licht 54,1292 (2002)). In 2008, Berman combined with this photobiological effect proposed a click rhythm factor (CAF) to characterize the intensity of photobiological effect [ Berman SM, Lighting Research and Technology 40(4),373(2008) ]. Research shows that the light source of lower spinor rhythm factors plays an important role in the health of people who move in the bedroom. The conventional white light technology has less consideration to the schchen rhythm factors and related parameters. Chinese patent CN202274926U discloses a measuring device for shichen visual luminous flux.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a tricolor white light LED with a low-rise rhythm factor, which can be used for bedroom illumination and desk lamp illumination and is beneficial to long-term sleeping health and reading health of people.
The LED packaging structure comprises a heat dissipation base, a packaging body, a red light chip, an yttrium aluminum garnet fluorescent powder and silica gel mixture, a lens, a reflection cup, a blue light LED chip and a metal electrode; the heat dissipation base, the red light chip, the reflection cup and the blue light LED chip are arranged in the packaging body; the red light chips and the blue light LED chips are arranged on the heat dissipation base, 1 blue light LED chip is arranged in the middle of the heat dissipation base, and 4 red light chips are arranged around the blue light LED chips; the lens is packaging glass which is used for protecting the red light chip and the yttrium aluminum garnet fluorescent powder from being oxidized by air; the inner wall of the light reflecting cup is silvered, and the silvered inner wall is used for enhancing the light reflection effect and improving the light extraction rate; the yttrium aluminum garnet fluorescent powder and silica gel mixture are uniformly coated on the lower surface of the lens, the yttrium aluminum garnet fluorescent powder and silica gel mixture and the lens are arranged above the packaging body, two ends of the lens are in sealing contact with the packaging body, the anode and the cathode of the red light chip are respectively led to the metal electrodes in a lead bonding mode, and the metal electrodes are embedded in the packaging body.
The definition of the spinor rhythm factor is as follows:
wherein, the spectrum physiological response curve C (lambda) (refer to the curve model proposed by Gall et al), V (lambda) is the photopic vision spectrum response curve, and S (lambda) is the spectrum power distribution of the light source.
The number ratio of the blue light LED chips to the red light chips can be 1: 4, and the blue light LED chips and the red light chips are used for reducing the ratio of blue light and increasing the ratio of red light so as to reduce the Schchen rhythm factor and improve the color rendering index at the same time.
The invention converts blue light into yellow green light by adopting a mode of mixing silica gel and fluorescent powder through a three-primary-color mixed white light principle, supplements red light of a red light chip on the basis, and aims to obtain a white light LED light source with low spinor rhythm factors and high color rendering index. The core components of the tricolor white light LED comprise a blue light LED, a red light LED and yttrium aluminum garnet fluorescent powder.
The invention adopts the remote fluorescent powder scheme, and because the types and the number of the chips are more and the chips generate heat seriously during working, the remote fluorescent powder scheme is adopted to avoid the influence of heat on the fluorescent powder and the performance of the chips.
Drawings
FIG. 1 is a cross-sectional view of an embodiment of the present invention.
FIG. 2 is a top view of an embodiment of the present invention.
FIG. 3 is a spectral physiological response curve and a photopic spectral response curve of an embodiment of the present invention.
FIG. 4 is a low spinor rhythm factor and high color rendering index spectrogram at a color temperature of 3000K according to the embodiment of the invention.
FIG. 5 is a low spinor rhythm factor and high color rendering index spectrogram at 4000K color temperature according to the embodiment of the invention.
FIG. 6 is a low spinor rhythm factor and high color rendering index spectrogram at color temperature of 5000K according to the embodiment of the invention.
Detailed Description
The invention is further described below with reference to the figures and examples.
Referring to fig. 1 and 2, the embodiment of the invention comprises a heat dissipation base 1, a packaging body 2, a red light chip 3, an yttrium aluminum garnet fluorescent powder and silica gel mixture 4, a lens 5, a reflection cup 6, a blue light LED chip 7 and a metal electrode; the heat dissipation base 1, the red light chip 3, the reflecting cup 6 and the blue light LED chip 7 are arranged inside the packaging body 2; the red light chips 3 and the blue light LED chips 7 are arranged on the heat dissipation base 1, 1 blue light LED chip 7 is arranged in the middle of the heat dissipation base 1, and 4 red light chips 3 are arranged around the blue light LED chips 7; the lens 5 is packaging glass which is used for protecting the red light chip 3 and the yttrium aluminum garnet fluorescent powder from being oxidized by air; the inner wall of the light reflecting cup 6 is silvered, and the silvered inner wall is used for enhancing the light reflection effect and improving the light extraction rate; the yttrium aluminum garnet fluorescent powder and silica gel mixture 4 is uniformly coated on the lower surface of the lens 5, the yttrium aluminum garnet fluorescent powder and silica gel mixture 4 and the lens 5 are placed above the packaging body 2, two ends of the lens 5 are in sealing contact with the packaging body 2, the anode and the cathode of the red light chip 3 are respectively led to the metal electrodes in a lead bonding mode, and the metal electrodes are embedded in the packaging body 2.
The definition of the spinor rhythm factor is as follows:
the spectral physiological curve C (λ) adopts a curve model proposed by Gall et al (see fig. 3), V (λ) is a photopic vision spectral response curve (see fig. 3), and S (λ) is a spectral power distribution of a light source.
The number ratio of the blue light LED chips to the red light chips can be 1: 4, and the blue light LED chips and the red light chips are used for reducing the ratio of blue light and increasing the ratio of red light so as to reduce the Schchen rhythm factor and improve the color rendering index at the same time.
Specific examples are given below.
The white light lamp is mainly applied to bedroom illumination and desk lamp illumination, and the correlated color temperature of the white light lamp is 3000-5000K. According to the embodiment, the recommended optimization results under three groups of different color temperatures are calculated through programming as follows:
the first scheme is as follows: the peak wavelength of the blue light LED is 440-460 nm, the half width of the spectrum is 20-30 nm, the peak wavelength of the red light is 620-640 nm, the half width of the spectrum is 15-30 nm, the emission spectrum wavelength of the yellow light emitting fluorescent powder is 545-575 nm, the half width of the spectrum is 110-130 nm, the correlated color temperature is 3000K, the color rendering index is 90, and the spinor rhythm factor is 0.319 (see figure 4). The CAF of standard light source a (reference light source) at correlated color temperature 3000K was calculated to be 0.407. Compared with the standard light source, the spinor rhythm factor is reduced by 21.6 percent.
Scheme II: the peak wavelength of the blue light LED is 440-460 nm, the half width of the spectrum is 20-30 nm, the peak wavelength of the red light is 620-640 nm, the half width of the spectrum is 15-30 nm, the emission spectrum wavelength of the yellow light emitting fluorescent powder is 545-575 nm, the half width of the spectrum is 110-130 nm, the correlated color temperature is 4000K, the color rendering index is 90, and the spinor rhythm factor is 0.512 (see figure 5). The CAF of standard light source a (reference light source) at correlated color temperature 4000K was calculated to be 0.605. Compared with the standard light source, the spinor rhythm factor is reduced by 15.4 percent.
The third scheme is as follows: the peak wavelength of the blue light LED is 440-460 nm, the half width of the spectrum is 20-30 nm, the peak wavelength of the red light is 620-640 nm, the half width of the spectrum is 15-30 nm, the emission spectrum wavelength of the yellow light emitting fluorescent powder is 545-575 nm, the half width of the spectrum is 110-130 nm, the correlated color temperature is 5000K, the color rendering index is 90, and the spinor rhythm factor is 0.677 (see figure 6). The CAF of the standard light source D (reference light source) at correlated color temperature 5000K was calculated to be 0.748. Compared with the standard light source, the spinor rhythm factor is reduced by 9.5 percent.
Claims (1)
1. A tricolor white light LED with low spinor rhythm factor is characterized by comprising a heat dissipation base, a packaging body, a red light chip, a yttrium aluminum garnet fluorescent powder and silica gel mixture, a lens, a reflecting cup, a blue light LED chip and a metal electrode; the heat dissipation base, the red light chip, the reflection cup and the blue light LED chip are arranged in the packaging body; the red light chips and the blue light LED chips are arranged on the heat dissipation base, 1 blue light LED chip is arranged in the middle of the heat dissipation base, and 4 red light chips are arranged around the blue light LED chips; the lens is packaging glass which is used for protecting the red light chip and the yttrium aluminum garnet fluorescent powder from being oxidized by air; the inner wall of the reflecting cup is plated with silver; coating a yttrium aluminum garnet fluorescent powder and silica gel mixture on the lower surface of the lens, placing the yttrium aluminum garnet fluorescent powder and silica gel mixture and the lens above the packaging body, enabling two ends of the lens to be in sealing contact with the packaging body, respectively leading the positive electrode and the negative electrode of the red light chip to the metal electrodes in a lead bonding mode, and embedding the metal electrodes in the packaging body;
the definition of the spinor rhythm factor is as follows:
wherein, the spectrum physiological response curve C (lambda), V (lambda) is a photopic vision spectrum response curve, and S (lambda) is the spectrum power distribution of the light source;
the number ratio of the blue light LED chips to the red light chips is 1: 4;
the peak wavelength of the blue light LED is 440-460 nm, the half width of the spectrum is 20-30 nm, the peak wavelength of the red light is 620-640 nm, the half width of the spectrum is 15-30 nm, the emission spectrum wavelength of the yellow light emitting fluorescent powder is 545-575 nm, the half width of the spectrum is 110-130 nm, the correlated color temperature is 3000-5000K, and the spinor rhythm factor is 0.319-0.677.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710483941.9A CN107248511B (en) | 2017-06-23 | 2017-06-23 | Three-primary-color white light LED with low-spinor rhythm factor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710483941.9A CN107248511B (en) | 2017-06-23 | 2017-06-23 | Three-primary-color white light LED with low-spinor rhythm factor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107248511A CN107248511A (en) | 2017-10-13 |
| CN107248511B true CN107248511B (en) | 2019-12-31 |
Family
ID=60018274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710483941.9A Expired - Fee Related CN107248511B (en) | 2017-06-23 | 2017-06-23 | Three-primary-color white light LED with low-spinor rhythm factor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107248511B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI670446B (en) * | 2019-02-13 | 2019-09-01 | 東貝光電科技股份有限公司 | Led lighting device manufacturing method and led lighting device thereof |
| CN113035852A (en) * | 2021-03-22 | 2021-06-25 | 厦门大学 | Integrated MiniLED |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202917487U (en) * | 2012-11-02 | 2013-05-01 | 广东聚科照明股份有限公司 | High chromogenic LED light source based on red light chip direct-packaging compensation |
| CN203883001U (en) * | 2014-05-28 | 2014-10-15 | 陕西光电科技有限公司 | White-light LED encapsulation structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246876B (en) * | 2007-02-16 | 2010-05-19 | 厦门通士达照明有限公司 | LED lamp and method for acquiring the same |
| CN102945918A (en) * | 2012-12-05 | 2013-02-27 | 南通脉锐光电科技有限公司 | Warm white LED (light-emitting diode) light-emitting device |
-
2017
- 2017-06-23 CN CN201710483941.9A patent/CN107248511B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202917487U (en) * | 2012-11-02 | 2013-05-01 | 广东聚科照明股份有限公司 | High chromogenic LED light source based on red light chip direct-packaging compensation |
| CN203883001U (en) * | 2014-05-28 | 2014-10-15 | 陕西光电科技有限公司 | White-light LED encapsulation structure |
Non-Patent Citations (1)
| Title |
|---|
| Circadian-effect engineering of solid-state lighting spectra for beneficial and tunable lighting;Qi Dai等;《Optics EXPRESS》;20160822;第24卷(第18期);第20049-20058页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107248511A (en) | 2017-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101808451B (en) | Method for obtaining high-development adjustable color temperature white light by white and red and blue LED combination | |
| CN102244185B (en) | White light LED (light emitting diode) with high color rendering index, high light efficiency and low color temperature and preparation method thereof | |
| EP3316298A1 (en) | Cob light source | |
| CN101872825B (en) | Novel method for preparing high-power white LED with low color temperature and high color rendering property | |
| CN203491257U (en) | Novel COB (Chip On Board) light source with high color rendering index | |
| CN110137164A (en) | A kind of method and white light LEDs of class solar spectrum white light that realizing low blue light harm | |
| CN103050615B (en) | A kind of White LED with high color rendering property device | |
| EP3997732A1 (en) | Full spectrum white light emitting devices | |
| CN202275828U (en) | Color temperature adjustable white LED integrated packaging structure | |
| CN202598208U (en) | White light light-emitting diode (LED) with adjustable color-temperature and color-rendering index | |
| WO2020248748A1 (en) | Led light source for rhythm lighting | |
| CN205640712U (en) | Light source module and lighting device | |
| CN104241494A (en) | Novel adjustable low-color-temperature high-color-rendering high-power white light LED method | |
| CN107248511B (en) | Three-primary-color white light LED with low-spinor rhythm factor | |
| CN204130580U (en) | A kind of COB light source with high color rendering index (CRI) and adjustable color function | |
| CN108878624A (en) | A kind of white LED light source and lighting device | |
| CN111081689A (en) | Packaging structure of LED light source | |
| CN212648239U (en) | LED light source and color mixing lamp | |
| CN102454945A (en) | Method for obtaining high-color rendering warm white and packaging structure thereof | |
| CN110880494A (en) | Full-spectrum LED lamp bead | |
| WO2011085568A1 (en) | Manufacturing method for integrally packaged high-power led illumination source and led illumination lamp | |
| CN201838590U (en) | Twin-wafer high-color-rendering-property warm white light packaging structure | |
| CN202791846U (en) | Simulated sunlight spectrum integrated optical source | |
| CN203415624U (en) | White LED with high color rendering index | |
| CN113725329A (en) | Full-spectrum lamp bead LED chip and full-spectrum low UGR low blue light lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191231 |