CN107248511B - 一种具有低司辰节律因子的三基色白光led - Google Patents

一种具有低司辰节律因子的三基色白光led Download PDF

Info

Publication number
CN107248511B
CN107248511B CN201710483941.9A CN201710483941A CN107248511B CN 107248511 B CN107248511 B CN 107248511B CN 201710483941 A CN201710483941 A CN 201710483941A CN 107248511 B CN107248511 B CN 107248511B
Authority
CN
China
Prior art keywords
chip
red light
light led
blue light
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201710483941.9A
Other languages
English (en)
Other versions
CN107248511A (zh
Inventor
郭自泉
刘凯
陈忠
吕毅军
朱丽虹
林岳
丘海华
林苡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen University
Original Assignee
Xiamen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen University filed Critical Xiamen University
Priority to CN201710483941.9A priority Critical patent/CN107248511B/zh
Publication of CN107248511A publication Critical patent/CN107248511A/zh
Application granted granted Critical
Publication of CN107248511B publication Critical patent/CN107248511B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种具有低司辰节律因子的三基色白光LED，涉及LED。包括散热基座、封装体、红光芯片、钇铝石榴石荧光粉与硅胶混合体、透镜、反光杯、蓝光LED芯片和金属电极；散热基座、红光芯片、反光杯和蓝光LED芯片置于封装体内部；红光芯片和蓝光LED芯片置于散热基座上，散热基座的中间设有1颗蓝光LED芯片，在围绕蓝光LED芯片设有4颗红光芯片；透镜为封装玻璃，反光杯内壁镀银；钇铝石榴石荧光粉与硅胶混合体均匀涂敷在透镜的下表面，钇铝石榴石荧光粉与硅胶混合体和透镜置于封装体上方并使透镜两端与封装体密封接触，红光芯片的正负极通过引线键合方式分别引到金属电极上，将金属电极内嵌于封装体中。

Description

一种具有低司辰节律因子的三基色白光LED
技术领域
本发明涉及LED，尤其是涉及一种基于三基色混合原理的具有低司辰节律因子的三基色白光LED。
背景技术
作为新一代照明技术，白光发光二极管(LED)具有节能、环保、寿命长、体积小等优点，被广泛应用于室内照明、室外照明、背光显示、汽车照明、装饰等领域。当前白光LED主要有三种实现方式。第一种是基于氮化镓材料的蓝光LED激发黄绿色钇铝石榴石的铝酸盐荧光粉，是目前市场上的主流形式，这种方式的白光LED的成本相对较低，但是显色指数(color-rendering index,Ra)不高、相关色温(correlated color temperature，CCT)偏高。第二种是采用三个单基色LED芯片，即红、绿和蓝光芯片构成的白光LED。这种方式的白光LED成本较高，白光的光色较容易随电流不稳定变化而产生波动。第三种方式是近紫外LED激发三基色荧光粉。目前这种方式技术相对不成熟、且紫外光芯片成本也较高。在第一种方式的白光LED中适当加入红色芯片或红色荧光粉可以显著提高显色性，并可动态调节色温。
2002年，美国Brown大学的Berson等发现了哺乳动物视网膜的第三类感光细胞-视网膜自主感光神经节细胞(ipRGCs)[Berson DM,Science 295(5557),1070(2002)]。这种细胞接收外界光线，影响哺乳动物体内的褪黑素、皮质醇等激素的合成，进而影响哺乳动物的昼夜的司辰节律。司辰节律对于人们的睡眠质量和人体免疫力非常重要。2002年，Gall提出了一个与司辰节律有关的光谱生理响应曲线(D.Gall,Licht 54,1292(2002))。2008年，Berman结合这种光生物效应，提出了一个司辰节律因子(circadian action factor，CAF)以表征光生物效应的强弱[Berman SM,Lighting Research and Technology 40(4),373(2008)]。研究表明，较低的司辰节律因子的光源对卧室内活动的人们的健康有重要作用。而现有白光技术对司辰节律因子及相关参数考虑较少。其中，中国专利CN202274926U公开一种司辰视觉光通量的测量装置。
发明内容
本发明的目的是针对现有技术存在上述不足，提供可以用于卧室照明和台灯照明，以利于人们的长期睡眠健康和阅读健康的一种具有低司辰节律因子的三基色白光LED。
本发明包括散热基座、封装体、红光芯片、钇铝石榴石荧光粉与硅胶混合体、透镜、反光杯、蓝光LED芯片和金属电极；所述散热基座、红光芯片、反光杯和蓝光LED芯片置于封装体内部；所述红光芯片和蓝光LED芯片置于散热基座上，散热基座的中间设有1颗蓝光LED芯片，在围绕蓝光LED芯片设有4颗红光芯片；透镜为封装玻璃，封装玻璃用于保护红光芯片和钇铝石榴石荧光粉不被空气氧化；所述反光杯内壁镀银，所述内壁镀银用于增强光反射作用，提高出光率；钇铝石榴石荧光粉与硅胶混合体均匀涂敷在透镜的下表面，钇铝石榴石荧光粉与硅胶混合体和透镜置于封装体上方并使透镜两端与封装体密封接触，红光芯片的正负极通过引线键合方式分别引到金属电极上，将金属电极内嵌于封装体中。
本发明所述司辰节律因子的定义为：
其中，光谱生理响应曲线C(λ)(参见Gall等人提出的曲线模型)，V(λ)为明视觉光谱响应曲线，S(λ)为光源的光谱功率分布。
本发明所述蓝光LED芯片和红光芯片的个数比例可为1︰4，本发明采用该比例的目的是减少蓝光的比例，增加红光的比例，以降低司辰节律因子和同时提高显色指数。
本发明通过三基色混合白光原理，采用硅胶和荧光粉混合的方式，将蓝光转换为黄绿光，在此基础上补充红光芯片的红光，其目的是得到具有低司辰节律因子，同时又兼具高显色指数的白光LED光源。本发明所述三基色白光LED的核心组成部分包括蓝光LED、红光LED和钇铝石榴石荧光粉。
本发明采用远程荧光粉方案，由于本发明中芯片种类和个数均较多，芯片工作时发热比较严重，因此采用远程荧光粉的方案，避免热量对荧光粉和芯片性能的影响。
附图说明
图1为本发明实施例的剖面图。
图2为本发明实施例的俯视图。
图3为本发明实施例的光谱生理响应曲线和明视觉光谱响应曲线。
图4为本发明实施例的3000K色温下低司辰节律因子、高显色指数的光谱图。
图5为本发明实施例的4000K色温下低司辰节律因子、高显色指数的光谱图。
图6为本发明实施例的5000K色温下低司辰节律因子、高显色指数的光谱图。
具体实施方式
下面结合附图和实施例对本发明作进一步的说明。
参见图1和2，本发明实施例包括散热基座1、封装体2、红光芯片3、钇铝石榴石荧光粉与硅胶混合体4、透镜5、反光杯6、蓝光LED芯片7和金属电极；所述散热基座1、红光芯片3、反光杯6和蓝光LED芯片7置于封装体2内部；所述红光芯片3和蓝光LED芯片7置于散热基座1上，散热基座1的中间设有1颗蓝光LED芯片7，在围绕蓝光LED芯片7设有4颗红光芯片3；透镜5为封装玻璃，封装玻璃用于保护红光芯片3和钇铝石榴石荧光粉不被空气氧化；所述反光杯6内壁镀银，所述内壁镀银用于增强光反射作用，提高出光率；钇铝石榴石荧光粉与硅胶混合体4均匀涂敷在透镜5的下表面，钇铝石榴石荧光粉与硅胶混合体4和透镜5置于封装体2上方并使透镜5两端与封装体2密封接触，红光芯片3的正负极通过引线键合方式分别引到金属电极上，将金属电极内嵌于封装体2中。
本发明所述司辰节律因子的定义为：
其中，光谱生理曲线C(λ)采用Gall等人提出的曲线模型(参见图3)，V(λ)为明视觉光谱响应曲线(参见图3)，S(λ)为光源的光谱功率分布。
本发明所述蓝光LED芯片和红光芯片的个数比例可为1︰4，本发明采用该比例的目的是减少蓝光的比例，增加红光的比例，以降低司辰节律因子和同时提高显色指数。
以下给出具体实施例。
考虑本发明主要应用于卧室照明和台灯照明，白光灯的相关色温考虑为3000～5000K。根据实施例，通过编程计算推荐的三组不同色温下的优化结果为：
方案一：蓝光LED峰值波长440～460nm、光谱半高宽20～30nm，红光峰值波长620～640nm、光谱半高宽15～30nm，发黄光的荧光粉发射谱波长545～575nm、光谱半高宽110～130nm，相关色温3000K，显色指数90，司辰节律因子0.319(参见图4)。计算相关色温3000K下的标准光源A(参考光源)的CAF为0.407。与标准光源相比，司辰节律因子下降21.6％。
方案二：蓝光LED峰值波长440～460nm、光谱半高宽20～30nm，红光峰值波长620～640nm、光谱半高宽15～30nm，发黄光的荧光粉发射谱波长545～575nm、光谱半高宽110～130nm，相关色温4000K，显色指数90，司辰节律因子0.512(参见图5)。计算相关色温4000K下的标准光源A(参考光源)的CAF为0.605。与标准光源相比，司辰节律因子下降15.4％。
方案三：蓝光LED峰值波长440～460nm、光谱半高宽20～30nm，红光峰值波长620～640nm、光谱半高宽15～30nm，发黄光的荧光粉发射谱波长545～575nm、光谱半高宽110～130nm，相关色温5000K，显色指数90，司辰节律因子0.677(参见图6)。计算相关色温5000K下的标准光源D(参考光源)的CAF为0.748。与标准光源相比，司辰节律因子下降9.5％。

Claims (1)

1.一种具有低司辰节律因子的三基色白光LED，其特征在于包括散热基座、封装体、红光芯片、钇铝石榴石荧光粉与硅胶混合体、透镜、反光杯、蓝光LED芯片和金属电极；所述散热基座、红光芯片、反光杯和蓝光LED芯片置于封装体内部；所述红光芯片和蓝光LED芯片置于散热基座上，散热基座的中间设有1颗蓝光LED芯片，在围绕蓝光LED芯片设有4颗红光芯片；透镜为封装玻璃，封装玻璃用于保护红光芯片和钇铝石榴石荧光粉不被空气氧化；所述反光杯内壁镀银；钇铝石榴石荧光粉与硅胶混合体涂敷在透镜的下表面，钇铝石榴石荧光粉与硅胶混合体和透镜置于封装体上方并使透镜两端与封装体密封接触，红光芯片的正负极通过引线键合方式分别引到金属电极上，将金属电极内嵌于封装体中；
所述司辰节律因子的定义为：
其中，光谱生理响应曲线C(λ)，V(λ)为明视觉光谱响应曲线，S(λ)为光源的光谱功率分布；
所述蓝光LED芯片和红光芯片的个数比例为1︰4；
蓝光LED峰值波长440～460nm、光谱半高宽20～30nm，红光峰值波长620～640nm、光谱半高宽15～30nm，发黄光的荧光粉发射谱波长545～575nm、光谱半高宽110～130nm，相关色温3000～5000K，司辰节律因子为0.319～0.677。
CN201710483941.9A 2017-06-23 2017-06-23 一种具有低司辰节律因子的三基色白光led Expired - Fee Related CN107248511B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710483941.9A CN107248511B (zh) 2017-06-23 2017-06-23 一种具有低司辰节律因子的三基色白光led

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710483941.9A CN107248511B (zh) 2017-06-23 2017-06-23 一种具有低司辰节律因子的三基色白光led

Publications (2)

Publication Number Publication Date
CN107248511A CN107248511A (zh) 2017-10-13
CN107248511B true CN107248511B (zh) 2019-12-31

Family

ID=60018274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710483941.9A Expired - Fee Related CN107248511B (zh) 2017-06-23 2017-06-23 一种具有低司辰节律因子的三基色白光led

Country Status (1)

Country Link
CN (1) CN107248511B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI670446B (zh) * 2019-02-13 2019-09-01 東貝光電科技股份有限公司 Led燈具製造方法及其led燈具
CN113035852A (zh) * 2021-03-22 2021-06-25 厦门大学 集成式MiniLED

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202917487U (zh) * 2012-11-02 2013-05-01 广东聚科照明股份有限公司 基于红光芯片直封补偿的高显色led光源
CN203883001U (zh) * 2014-05-28 2014-10-15 陕西光电科技有限公司 一种白光led封装结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246876B (zh) * 2007-02-16 2010-05-19 厦门通士达照明有限公司 一种获得led灯的方法及led灯
CN102945918A (zh) * 2012-12-05 2013-02-27 南通脉锐光电科技有限公司 一种暖白光led发光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202917487U (zh) * 2012-11-02 2013-05-01 广东聚科照明股份有限公司 基于红光芯片直封补偿的高显色led光源
CN203883001U (zh) * 2014-05-28 2014-10-15 陕西光电科技有限公司 一种白光led封装结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Circadian-effect engineering of solid-state lighting spectra for beneficial and tunable lighting;Qi Dai等;《Optics EXPRESS》;20160822;第24卷(第18期);第20049-20058页 *

Also Published As

Publication number Publication date
CN107248511A (zh) 2017-10-13

Similar Documents

Publication Publication Date Title
CN101808451B (zh) 白光加红蓝led组合获得高显色可调色温白光的方法
CN102244185B (zh) 一种具有高显色指数、高光效、低色温的白光led及其制备方法
EP3316298A1 (en) Cob light source
CN101872825B (zh) 制备低色温高显色性大功率白光led的方法
CN203491257U (zh) 一种新型高显色指数的cob光源
JP7504980B2 (ja) フルスペクトル白色発光デバイス
CN110137164A (zh) 一种实现低蓝光危害的类太阳光谱白光的方法及白光led
CN103050615B (zh) 一种高显色性白光led器件
CN202275828U (zh) 一种可调色温的白光led集成封装结构
CN202598208U (zh) 可调色温和显指的白光led
WO2020248748A1 (zh) 节律照明用的led光源
CN205640712U (zh) 光源模组和照明装置
CN104241494A (zh) 可调节低色温高显色性大功率白光led新方法
CN107248511B (zh) 一种具有低司辰节律因子的三基色白光led
CN204130580U (zh) 一种具有高显色指数及色温可调功能的cob 光源
CN108878624A (zh) 一种白光led光源及照明装置
CN111081689A (zh) 一种led光源的封装结构
CN212648239U (zh) 一种led光源及调色灯
CN207183266U (zh) 一种高显指高亮度的白光led光源器件
CN102454945A (zh) 一种获得高显色性暖白光的方法及其封装结构
CN110880494A (zh) 一种全光谱led灯珠
WO2011085568A1 (zh) 集成封装大功率led照明光源制作方法及led照明灯
CN201838590U (zh) 双晶片高显色性暖白光封装结构
CN203415624U (zh) 一种高显色性白光led器件
CN113725329A (zh) 一种全光谱灯珠led芯片及全光谱低ugr低蓝光灯具

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20191231