CN203883001U - 一种白光led封装结构 - Google Patents

一种白光led封装结构 Download PDF

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CN203883001U
CN203883001U CN201420278932.8U CN201420278932U CN203883001U CN 203883001 U CN203883001 U CN 203883001U CN 201420278932 U CN201420278932 U CN 201420278932U CN 203883001 U CN203883001 U CN 203883001U
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white
light
led
chip
package structure
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梁田静
陈建昌
童华南
李帆
张静
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SHAANXI OPTOELECTRONICS TECHNOLOGY Co Ltd
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SHAANXI OPTOELECTRONICS TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Abstract

本实用新型公开了一种白光LED的封装结构，包括LED支架(1)，及设置在LED支架(1)内壁上的反光层(2)，其特征在于，所述LED支架(1)碗杯底部固定有LED发光模组(34)，所述LED发光模组(34)包含蓝光芯片(3)和红光芯片(4)；蓝光芯片(3)和红光芯片(4)分别通过金线(7)连接至电极(8)，透明介质(5)涂覆在芯片模组(34)表面，荧光胶(6)涂覆在透明介质(5)的表面。本实用新型解决了现有技术中存在的红色荧光粉激发效率低，同时荧光粉受芯片PN结温度影响衰减过快，造成LED单颗及整灯的衰减过快的问题。

Description

一种白光LED封装结构
技术领域
本实用新型属于半导体照明技术领域，涉及一种高性能的白光LED封装结构。
背景技术
LED具有体积小、能耗低、使用寿命长、绿色环保等优点。随着我国禁白法令的颁布，LED作为新型光源，在照明领域的应用范围越来越广泛。但同时，市场对LED器件的性能要求也越来越高。
目前实现白光LED的方式主要是在蓝光芯片上涂覆黄色荧光粉，荧光粉发出的黄光与剩余蓝光混合，形成白光。为了得到高显色指数白光，一般会在黄色荧光粉中混合红色荧光粉，来补充光谱中缺失的红色光成分，提高LED的显色指数。但是红色荧光粉激发效率较低，虽然可以提高LED器件的显色指数，但是也会导致LED整体亮度下降。而且芯片在长时间点亮状态下，PN结会产生较高结温。将荧光粉直接涂覆在芯片表面，荧光粉紧靠热源，长期受高温影响，会降低荧光粉的激发效率、使荧光粉衰减过快，进而造成LED光源的整体衰减较快。
综上所述，现有技术的LED器件要替代白炽灯和荧光灯广泛应用于普通照明领域，在提高显色指数的同时，其发光效率需要进一步提高，同时还要延长使用寿命。
实用新型内容
本实用新型的目的是提供一种高性能白光LED封装结构，解决了现有技术中存在的红色荧光粉激发效率低，同时荧光粉受芯片PN结温度影响衰减过快，造成LED单颗及整灯的衰减过快的问题。
本实用新型的目的是通过下述技术方案来实现的。
一种白光LED封装结构，包括LED支架，及设置在LED支架内壁上的反光层，所述LED支架碗杯底部固定有LED发光模组，所述LED发光模组包含蓝光芯片和红光芯片；蓝光芯片和红光芯片分别通过金线连接至电极，透明介质涂覆在芯片模组表面，荧光胶涂覆在透明介质的表面。
进一步地，所述LED发光模组包含至少一个蓝光芯片及至少两个红光芯片；蓝光和红光芯片的数量比为1:2～1:5之间。
进一步地，所述蓝光芯片波长在440-460nm；红光芯片波长在610-630nm。
进一步地，所述LED支架内壁呈碗状圆弧形结构。
进一步地，所述LED支架内壁有一层反光层，该反光层是利用电镀或蒸镀工艺将Ag、Al、Au、Cr、Cu中的一种镀在支架碗杯内壁；或者是将反光片直接表贴在支架内壁，形成高反光面。
进一步地，所述透明介质为硅胶、环氧树脂中的一种。
进一步地，所述荧光胶在透明介质之上，形状为向外凸起的半球或半弧形状，外凸角度在20-180°之间。
本实用新型的有益效果是：支架碗杯内壁采用碗状圆弧形结构。在碗杯内壁表面有一层反光层，可使芯片模组发出的光在碗杯中进行汇聚后再反射出去，减少光损失，使光具有很强的指向性。
采用芯片模组方式进行LED封装，利用红光芯片发出的红光直接对光谱中缺失的红光成分进行补偿，避免了红色荧光粉激发效率低的问题，使显色指数和光通量同时得到提高。
在芯片模组表面涂覆一层高透光材料层，可将荧光胶(黄色荧光粉与硅胶混合)与芯片模组隔离开来，实现远程激发，使荧光粉远离芯片模组发出的热源，荧光粉不容易长期受高温，从而保证了荧光粉的长寿命和高光效。
荧光胶制备成向外凸起的半球或半弧形状，使LED器件出光效率更高，颜色一致性更好，无光斑、无暗区、无眩光。
附图说明
附图1是本实用新型的侧视图。
图1中，1.LED支架，2.反光层，34.LED发光模组，3.蓝光芯片，4.红光芯片，5.透明介质层，6.荧光胶层，7.金线，8.电极。
具体实施方式
下面结合附图和具体实施方式对本实用新型进行详细说明。
如附图1所示，本实用新型包括LED支架1，及设置在LED支架1内壁上的反光层2，LED支架1碗杯底部固定有LED发光模组34，该发LED光模组34包含至少一个波长在440-460nm的蓝光芯片3及至少两个波长在610-630nm的红光芯片4。蓝光芯片3和红光芯片4分别通过金线7连接至电极8。高折射透明介质5涂覆在芯片模组34表面，荧光胶6涂覆在透明介质5的表面。
其中，LED支架1内壁呈碗状圆弧形结构；该结构可使芯片模组发出的光在碗杯中进行聚集，减少了光的散射，提高了光束的利用率，使光具有更强的指向性。
LED支架1内壁有一层反光层，该反光层是利用电镀或蒸镀工艺将Ag、Al、Au、Cr、Cu中的一种镀在支架碗杯内壁；或者是将反光片直接表贴在支架内壁，形成高反光面。反光层可使聚集的光更多的反射出去，减少光损失，提高LED器件的整体出光效率。
LED发光模组34包含至少一个蓝光芯片3及至少两个红光芯片4；蓝光和红光芯片的数量比为1：2～1:5之间。红色芯片可对光谱中缺失的红色光进行补偿作用，使LED器件的显色指数达到80以上。
LED芯片模组表面涂覆有透明介质5，该透明介质5为硅胶、环氧树脂中的一种。该层透明介质5可将荧光胶6与芯片模组隔离开来，实现远程激发，使荧光粉远离芯片模组发出的热源，荧光粉不容易长期受高温，从而保证了荧光粉的长寿命和高光效。
荧光胶6在透明介质5之上，形状为向外凸起的半球或半弧形状，外凸角度在20-180°之间。该种形状可使LED器件出光效率更高，颜色的一致性更好，而且无光斑、无暗区、无眩光、发光角度大。
以上所述仅为本实用新型的一种实施方式，不是全部或唯一的实施方式，本领域普通技术人员通过阅读本实用新型说明书而对本实用新型技术方案采取的任何等效的变换，均为本实用新型的权利要求所涵盖。

Claims (7)

1.一种白光LED封装结构，包括LED支架(1)，及设置在LED支架(1)内壁上的反光层(2)，其特征在于，所述LED支架(1)碗杯底部固定有LED发光模组(34)，所述LED发光模组(34)包含蓝光芯片(3)和红光芯片(4)；蓝光芯片(3)和红光芯片(4)分别通过金线(7)连接至电极(8)，透明介质(5)涂覆在芯片模组(34)表面，荧光胶(6)涂覆在透明介质(5)的表面。
2.根据权利要求1所述的一种白光LED封装结构，其特征在于，所述LED发光模组(34)包含至少一个蓝光芯片(3)及至少两个红光芯片(4)；蓝光芯片(3)和红光芯片(4)的数量比为1:2～1:5之间。
3.根据权利要求2所述的一种白光LED封装结构，其特征在于，所述蓝光芯片3波长在440-460nm；红光芯片4波长在610-630nm。
4.根据权利要求1所述的一种白光LED封装结构，其特征在于，所述LED支架(1)内壁呈碗状圆弧形结构。
5.根据权利要求1所述的一种白光LED封装结构，其特征在于，所述LED支架(1)内壁有一层反光层，该反光层是利用电镀或蒸镀工艺将Ag、Al、Au、Cr、Cu中的一种镀在支架碗杯内壁；或者是将反光片直接表贴在支架内壁，形成高反光面。
6.根据权利要求1所述的一种白光LED封装结构，其特征在于，所述透明介质(5)为硅胶、环氧树脂中的一种。
7.根据权利要求1所述的一种白光LED封装结构，其特征在于，所述荧光胶(6)在透明介质(5)之上，形状为向外凸起的半球或半弧形状，外凸角度在20-180°之间。
CN201420278932.8U 2014-05-28 2014-05-28 一种白光led封装结构 Expired - Fee Related CN203883001U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107248511A (zh) * 2017-06-23 2017-10-13 厦门大学 一种具有低司辰节律因子的三基色白光led

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107248511A (zh) * 2017-06-23 2017-10-13 厦门大学 一种具有低司辰节律因子的三基色白光led
CN107248511B (zh) * 2017-06-23 2019-12-31 厦门大学 一种具有低司辰节律因子的三基色白光led

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