WO2011085568A1 - 集成封装大功率led照明光源制作方法及led照明灯 - Google Patents

集成封装大功率led照明光源制作方法及led照明灯 Download PDF

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WO2011085568A1
WO2011085568A1 PCT/CN2010/071556 CN2010071556W WO2011085568A1 WO 2011085568 A1 WO2011085568 A1 WO 2011085568A1 CN 2010071556 W CN2010071556 W CN 2010071556W WO 2011085568 A1 WO2011085568 A1 WO 2011085568A1
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chip
power
led illumination
light
substrate
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PCT/CN2010/071556
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French (fr)
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李远清
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赵翼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Definitions

  • the invention relates to a method for manufacturing an LED illumination source for a luminaire and an LED illumination lamp. It belongs to the lighting device parts category (F21V).
  • LED lighting has become a trend in lighting, and has the following advantages over traditional lighting incandescent, sodium, and energy-saving lamps: Energy saving, long life, environmental protection and safety, healthy light source, high voltage fluctuation and easy to use.
  • the commonly used LED lighting systems are all commercially available LED light bulbs that are individually packaged into a single grain, and are connected in series and parallel to produce an illumination source of the required power.
  • the LED light source has low power and can only be used up to 2 Tile, equivalent to 20 watts of incandescent lamp, basically meets the requirements for indoor lighting; but for outdoor high-power street lighting, the traditional sodium lamp is generally 250W-400W, corresponding to the above LED street light source requires 20-40W, the required small lamp bead spot Too many (50 to less, more than 200). Therefore, corresponding to the above LED high-power illumination lamp, there are the following disadvantages:
  • Each of the multiple light spots is individually packaged, and there are too many scattering agents and phosphors added, so the light is unnatural, too white, and there is chemical radiation to the human body beyond a certain limit.
  • the integrated package high-power LED illumination source manufacturing method and the LED illumination lamp provided by the invention are multi-point LEDs which overcome the composition of the low-power lamp bead to generate glare and light pollution, short life, serious light decay, unnatural light, chemical radiation Big and power limited issues.
  • the integrated package high-power LED illumination source manufacturing method includes the following steps:
  • a plurality of single white LED chips 1 are selected, placed on the substrate 2 made of non-metallic material at a certain interval, and a plurality of single white LED chips are bonded and fixed by the conductive glue silver glue 3. Become a light-emitting chip 4 with a power of 0.01 per wafer -3 watts;
  • the light source chip and the substrate are integrally packaged with a mixture of the epoxy resin 6, the scattering agent and the phosphor 7, and become a square or rectangular integral package chip 8 having a side length of less than 40 mm;
  • each The source power is greater than 30 watts.
  • the power of the light source can be made up to 30 watts - 120 watts.
  • LED lighting source power is greater than 30 watts
  • LED illumination source comprises: a metal package cover 11 is fixed with an overall package chip 8 attached to the substrate 9 made of metal material; the substrate is mounted on the heat sink 10;
  • the whole packaged chip comprises: a light source chip 5, a substrate 2 and a peripheral encapsulant formed by an epoxy resin, a scattering agent and a phosphor mixture; the whole package chip is a square or a rectangle having a side length of less than 40 mm;
  • the light source chip is made up of one or more light-emitting chips 4 in series or/and in parallel according to the required power;
  • the power of a single white LED chip is 0.01-3 watts.
  • the advantages of the LED lighting lamp of the invention compared with the conventional light source are as follows: 1 energy saving; the energy consumption is 1/10 of the incandescent lamp, 1/6 of the high pressure sodium lamp, and 1/4 of the energy saving lamp. 2 Long life span of 100,000 hours. 3 can work under frequent startup and shutdown, and the voltage fluctuation range is large. 4 Environmental protection, safety: no radiation, no need to consider heat dissipation, no greenhouse effect. 5 solid package; not easy to break, not afraid of vibration, convenient for transportation and installation, suitable for high wind sand area.
  • the LED light source of the present invention (also referred to as single-point or high-power LED light source within 3 points), compared with the existing multi-light spot LED light source sample test results, it is obtained: 1
  • the composition of the invention makes the light source color rendering extremely high: and because the total amount of packaging materials is reduced, the amount of scattering agent and phosphor is also small, the light is obviously soft, and is closer to natural light and sunlight (see Fig. 4).
  • the attenuation is slow, and the attenuation is less than 5% within three years.
  • the structure of the invention determines that the total amount of chemical materials such as epoxy resin, scattering agent and phosphor used is less than 1/10 of the amount of the existing multi-light point source, the light has no chemical radiation, which is more favorable to the eye and Physical health.
  • the high-power LED illumination source of the invention solves the problem that the existing multi-point LED light source cannot be used for outdoor lighting with relatively large power, and with the deepening of research and development, the power can reach more than 120 watts, making the LED semiconductor illumination become truly large. Power green lighting.
  • FIG. 1 is a schematic view of a light source chip 6 of the present invention, that is, a step 1) 2) of an LED illumination source manufacturing method;
  • FIG. 2 is a schematic view of the whole packaged chip 8 of the present invention, that is, a step 3) of the LED illumination source manufacturing method;
  • FIG. 3 is a schematic diagram of the integrated package high-power LED illumination source 12 of the present invention; that is, the step 3) of the LED illumination source manufacturing method;
  • Figure 4 is a diagram showing the effect of the chip package of the present invention.
  • FIG. 5 is a schematic structural diagram of a lighting street lamp product according to an embodiment of the present invention.
  • a method for manufacturing a high-power LED illumination source is integrally packaged, and the LED illumination source is used for a high-power street lamp.
  • the production method includes the following steps:
  • Fig. 1 As shown in Fig. 1, six single white LED chips 1 belonging to semiconductor components are selected, placed on a substrate 2 made of an organic material at a certain interval, and six single white LED wafers are bonded by a conductive paste silver paste 3. Fixed to the light-emitting chip 4; the power of a single white LED chip 1 is 0.01 - 3 watts (available in companies specializing in semiconductor-LED wafers worldwide).
  • Fig. 1 for example, six light-emitting chips 4 are connected in series (two strings) and in parallel (three blocks) to reach a light source chip 5 having a required power of 90 watts.
  • the epoxy resin 6 can be processed from a solid epoxy resin.
  • the total amount of epoxy resin glue, scattering agent and phosphor is less than 1/10 of the amount of multi-point light source made by the same power single-package single-light bulb.
  • the uniform amount of scattering agent and phosphor package is less than the amount of epoxy resin. 5%.
  • the above-mentioned integrally packaged chip 8 is attached to the substrate 9, which serves as a heat conduction and support, and is generally made of an aluminum plate.
  • the whole packaged chip with the substrate is mounted on the heat sink 10: finally, the metal lamp cover 11 is integrally mounted, and the metal lamp cover is made of die-cast aluminum to form an integrated package high-power LED illumination source 12, and the illumination source power is 90 watts.
  • the LED lighting street lamp produced by the above method comprises the following parts: 1 is shown in Fig. 5.
  • the lamp housing 13 an integrated package high-power LED illumination source 12 and a control circuit 14 connected thereto are fixed.
  • the control circuit is composed as follows: Street light AC power supply (AC)
  • the 220V is connected to the manual control switch, and the transformer rectifier circuit rectifies the AC 220V to DC DC24V; then the constant current drive control circuit is connected to the two poles 8a and 8b of the illumination source 12, and the light source power is 90 watts.
  • the street light housing 13 has a peripheral light pole and a support member 15. The position of the light source is adjusted within the lamp housing 13 as needed.
  • the LED illumination source 12 is composed of: an integrally packaged chip 8 attached to a substrate 9 made of an aluminum plate is fixed in the die-cast aluminum lamp cover 11; and the substrate is mounted on the heat sink 10.
  • the heat sink 10 can be made of a heat sink 10.1 made of ceramic and aluminum alloy material; the heat sink 10 can also be formed into a shape that matches the shape of the inner surface of the lamp cover or a heat sink 10.2 that is integrated with the inner surface of the lamp cover.
  • a retroreflective member 11.1 is mounted between the integral packaged chip 8 and the lamp housing 11.
  • a convex mirror is mounted at a position matching the light source.
  • the whole packaged chip 8 has an integral encapsulation layer formed by the light source chip 5, the substrate 2 and the peripheral epoxy glue, the scattering agent and the phosphor mixture.
  • the overall packaged chip has a length B8 of 30mm-40mm square on each side.
  • 4 is shown in FIG. 1.
  • the light source chip 5 is formed by six light-emitting chips 4 in which two blocks are connected in series and three blocks are connected in a required power of 90 watts. 5 is shown in FIG. 1.
  • the light-emitting chip 4 has: a single single white LED chip 1 with a certain spacing placed on a substrate 2 made of an organic material, and a conductive paste silver glue 3 to bond and fix the six wafers as a whole. Block.
  • the power of a single white LED wafer 1 is 2.5 watts.
  • a method for manufacturing a high-power LED illumination source is integrally packaged, and the LED illumination source is used for a high-power street lamp.
  • the production method includes the following steps:
  • Fig. 1 As shown in Fig. 1, six single white LED chips 1 belonging to semiconductor components are selected, placed on a substrate 2 made of an organic material at a certain interval, and six single white LED wafers are bonded by a conductive paste silver paste 3. Fixed to the light-emitting chip 4; the power of a single white LED chip 1 is 0.01 - 3 watts (available in companies specializing in semiconductor-LED wafers worldwide).
  • Fig. 1 for example, six light-emitting chips 4 are connected in series (two strings) and in parallel (three blocks) to reach a light source chip 5 having a required power of 90 watts.
  • the epoxy resin 6 can be processed from a solid epoxy resin.
  • the total amount of epoxy resin glue, scattering agent and phosphor is less than 1/10 of the amount of multi-point light source made by the same power single-package single-light bulb.
  • the uniform amount of scattering agent and phosphor package is less than the amount of epoxy resin. 5%.
  • the above-mentioned integrally packaged chip 8 is attached to the substrate 9, which serves as a heat conduction and support, and is generally made of an aluminum plate.
  • the whole packaged chip with the substrate is mounted on the heat sink 10: finally, the metal lamp cover 11 is integrally mounted, and the metal lamp cover is made of die-cast aluminum to form an integrated package high-power LED illumination source 12, and the illumination source power is 90 watts.
  • the LED lighting street lamp produced by the above method comprises the following parts: 1 is shown in Fig. 5.
  • the lamp housing 13 an integrated package high-power LED illumination source 12 and a control circuit 14 connected thereto are fixed.
  • the control circuit is composed as follows: Street light AC power supply (AC)
  • the 220V is connected to the manual control switch, and the transformer rectifier circuit rectifies the AC 220V to DC DC24V; then the constant current drive control circuit is connected to the two poles 8a and 8b of the illumination source 12, and the light source power is 90 watts.
  • the street light housing 13 has a peripheral light pole and a support member 15. The position of the light source is adjusted within the lamp housing 13 as needed.
  • the LED illumination source 12 is composed of: an integrally packaged chip 8 attached to a substrate 9 made of an aluminum plate is fixed in the die-cast aluminum lamp cover 11; and the substrate is mounted on the heat sink 10.
  • the heat sink 10 can be made of a heat sink 10.1 made of ceramic and aluminum alloy material; the heat sink 10 can also be formed into a shape that matches the shape of the inner surface of the lamp cover or a heat sink 10.2 that is integrated with the inner surface of the lamp cover.
  • a retroreflective member 11.1 is mounted between the integral packaged chip 8 and the lamp housing 11.
  • a convex mirror is mounted at a position matching the light source.
  • the whole packaged chip 8 has an integral encapsulation layer formed by the light source chip 5, the substrate 2 and the peripheral epoxy glue, the scattering agent and the phosphor mixture.
  • the overall packaged chip has a length B8 of 30mm-40mm square on each side.
  • 4 is shown in FIG. 1.
  • the light source chip 5 is formed by six light-emitting chips 4 in which two blocks are connected in series and three blocks are connected in a required power of 90 watts. 5 is shown in FIG. 1.
  • the light-emitting chip 4 has: a single single white LED chip 1 with a certain spacing placed on a substrate 2 made of an organic material, and a conductive paste silver glue 3 to bond and fix the six wafers as a whole. Block.
  • the power of a single white LED wafer 1 is 2.5 watts.
  • the product of the invention is suitable for industrial production.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
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Description

集成封装大功率LED照明光源制作方法及LED照明灯 技术领域
本发明涉及用于灯具的LED照明光源制作方法及LED照明灯 。属照明装置零部件类(F21V)。
背景技术
LED 照明已成为照明发展趋势，与传统照明白 炽灯、钠灯、节能灯比有如下优点： 节能、长寿命、环保安全、健康光源、电压波动大使用方便等。目前，常用的LED照明系统均是采用市售的独立封装成单粒的小灯珠光点，一个个串并联而制成所需功率的照明光源，此LED光源功率低，最大只能作到2瓦，相当于白炽灯20瓦，对室内照明而言基本满足要求；但对室外大功率路灯照明，一般传统钠灯是250W-400W，对应上述LED路灯光源需要20-40W，需要的小灯珠光点太多（少则50个，多则200个以上）。因此，对应上述LED大功率照明灯，存在以下缺点：
1）由于光点太多太刺眼，有眩光产生，易产生视觉疲劳；
2）发光点太多，难免有各点发光不均匀的现象、更由于各点的光衰严重的不同步、各点的发光强弱严重不均，所以照在地面上易产生星星点点而形成了眩光和光污染；
3）在多点的各个发光点之间，只能采取简单的串并联连接：串联的光点电压分配不是能满足每一个点的需要；并联的又不能保证每条电路的电流不超过极限，所以不能保证其寿命，一年后就发现至少有20%的路灯中部分点已熄灭，照度衰减严重；
4）多光点中每个发光点是独立封装的，所加的散射剂和荧光粉太多，所以光线不自然，太白，且超过一定的极限还会对人体有化学辐射。
技术问题
本发明提供的集成封装大功率LED照明光源制作方法及LED照明灯，就是克服小功率灯珠组成的多点发光二极管LED光源产生眩光和光污染、寿命短、光衰严重、光线不自然、化学辐射大及功率受限等问题。
技术解决方案
集成封装大功率LED照明光源制作方法，其特征包括下列步骤：
1）按照照明灯要求的功率大小，选择若干单个白光LED晶片1，按一定间距放于非金属材料制作的衬底2上，用导电胶状物银胶3将若干单个白光LED晶片粘结固定成为发光芯片4，每个晶片功率为0.01 -3瓦；
2）将一块以上发光芯片进行串联或/和并联连接，达到所需功率；成为光源芯片；
3）将光源芯片和衬底用环氧树脂胶6、散射剂和荧光粉7的混合体进行整体封装，成为边长小于40mm的正方形或长方形的整体封装芯片8；
4）将上述整体封装芯片贴在金属材料制作的基板9上；再连同基板安装在散热器10上；最后整体装入金属灯罩11内，便制成集成封装大功率LED照明光源12，每个光源功率大于30瓦。目前光源功率可作到30瓦-120瓦。
按上述的集成封装大功率LED照明光源制作方法制成的LED照明灯，其特征是此LED照明灯包括如下部分：
①在照明灯灯壳13内，固定有集成封装大功率LED照明光源12和与它连接的控制电路14； LED照明光源功率大于30瓦；
②LED照明光源包括：金属灯罩11内固定有贴在金属材料制作的基板9上的整体封装芯片8；基板安装在散热器10上；
③整体封装芯片内有:光源芯片5、衬底2和外围的环氧树脂胶、散射剂和荧光粉混合体形成的整体封装层；整体封装芯片为边长小于40mm的正方形或长方形；
④光源芯片由一块以上发光芯片4按所需功率进行串联或/和并联而成；
⑤发光芯片4内有：非金属材料制作的衬底2上放置有一定间距的若干单个白光LED晶片1，并有导电胶状物银胶3将若干晶片粘结固定为整体的块状体；单个白光LED晶片的功率为0.01-3瓦。
有益效果
1）本发明LED照明灯与传统光源比优点如下：①节能；能耗为白炽灯的1/10、高压钠灯的1/6、节能灯的1/4。②长寿命达10万小时。③可在频繁启动和关断下工作，电压波动范围大。④环保、安全：无幅射，不用考虑散热，无温室效应。⑤固态封装；不易碎，不怕振，运输安装方便，适合高风砂区使用。
2）根据本发明LED光源(也可称为单点式或3点以内的大功率LED光源)，与现有多光点LED光源样品试验比较结果，得到： ①本发明组成使光源显色性极高：且因封装材料总量减少，散射剂和荧光粉用量也少，光线明显柔和,更接近自然光、日光(见图4)。②发光均匀，没有眩光和光污染，对预防视觉疲劳有积极作用。 ③衰减缓慢，三年之内衰减不超过5%。④因本发明结构决定所需用的环氧树脂胶、散射剂、荧光粉等化学材料总量为现有多光点光源用量的1/10以下，因此光线无化学辐射，更有利于眼和身体的健康。
3）本发明大功率LED照明光源解决了现有多点LED光源不能用于功率相对较大的户外照明的问题，随研发的深入，功率可达120瓦以上，使LED半导体照明成为真正的大功率绿色照明。
附图说明
图1，本发明光源芯片6示意图,即LED照明光源制作方法步骤1)2)图示;
图2 ，本发明整体封装芯片8示意图,即LED照明光源制作方法步骤3)图示;
图3 ，本发明集成封装大功率LED照明光源12示意图; 即LED照明光源制作方法步骤3)图示;
图4 ，本发明芯片封装效果图;
图5 ，本发明实施例照明路灯产品原理结构示意图。
 本发明的最佳实施方式
见图1-图5，本实施例集成封装大功率LED照明光源制作方法，此LED照明光源用于大功率路灯。制作方法包括下列步骤：
1）见图1，选择六个属半导体元件的单个白光LED晶片1，按一定间距放于有机材料制作的衬底2上，用导电胶状物银胶3将六个单个白光LED晶片粘结固定成为发光芯片4；单个白光LED晶片1的功率为0.01-3瓦(可在世界上专门制作半导体-LED晶片的公司购买)。
2）见图1（举例），将六块发光芯片4进行串联(串两块)和并联(并三块)，达到所需功率为90瓦的光源芯片5。
3）见图2，将光源芯片5和衬底2用环氧树脂胶6、散射剂和荧光粉7的混合体进行整体封装成为正方形整体封装芯片8；正方形每边长B8=30-40mm。环氧树脂胶6可由固态环氧树脂加工而成。环氧树脂胶、散射剂和荧光粉总量小于现有相同功率独立封装单粒小灯珠制成的多点光源用量的1/10；散射剂和荧光粉封装均匀用量小于环氧树脂胶用量的5%。
4）见图3，将上述整体封装芯片8贴在基板9上，基板起导热和支撑作用，一般用铝板制作。带基板的整体封装芯片安装在散热器10上：最后整体装入金属灯罩11内，金属灯罩采用压铸铝，便制成集成封装大功率LED照明光源12，照明光源功率为90瓦。
上述方法制作的LED照明路灯包括如下部分：①见图5，在照明灯灯壳13内，固定有集成封装大功率LED照明光源12和与它连接的控制电路14。控制电路如下组成: 路灯交流电源(AC) 220V接手动控制开关、变压整流电路将交流220V整流为直流DC24V；再经恒流驱动控制电路接照明光源12的两极8a和8b，光源功率为90瓦。此路灯灯壳13外设灯杆和支撑件15。在灯壳13内按使用需要调整光源位置。②见图3，LED照明光源12如下组成：压铸铝灯罩11内固定有贴在铝板制作的基板9上的整体封装芯片8；基板安装在散热器10上。散热器10可采用陶瓷和铝合金材料制作的散热器10.1；散热器10也可以作成与灯罩内表面形状相配合的形状或贴于灯罩内表面融合为一体的散热器10.2。见图4，在整体封装芯片8和灯罩11间装有反光件11.1。在与光源相配合位置装凸镜。③见图2，整体封装芯片8内有：光源芯片5、衬底2和外围的环氧树脂胶、散射剂和荧光粉混合体形成的整体封装层。整体封装芯片每边长B8为30mm-40mm的正方形。④见图1，光源芯片5由六块发光芯片4按所需功率90瓦进行两块串联和三块并联而成。⑤见图1，发光芯片4内有：有机材料制作的衬底2上放置有一定间距的六个单个白光LED晶片1，并有导电胶状物银胶3将六个晶片粘结固定为整体块状体。单个白光LED晶片1的功率为2.5瓦。
本发明的实施方式
见图1-图5，本实施例集成封装大功率LED照明光源制作方法，此LED照明光源用于大功率路灯。制作方法包括下列步骤：
1）见图1，选择六个属半导体元件的单个白光LED晶片1，按一定间距放于有机材料制作的衬底2上，用导电胶状物银胶3将六个单个白光LED晶片粘结固定成为发光芯片4；单个白光LED晶片1的功率为0.01-3瓦(可在世界上专门制作半导体-LED晶片的公司购买)。
2）见图1（举例），将六块发光芯片4进行串联(串两块)和并联(并三块)，达到所需功率为90瓦的光源芯片5。
3）见图2，将光源芯片5和衬底2用环氧树脂胶6、散射剂和荧光粉7的混合体进行整体封装成为正方形整体封装芯片8；正方形每边长B8=30-40mm。环氧树脂胶6可由固态环氧树脂加工而成。环氧树脂胶、散射剂和荧光粉总量小于现有相同功率独立封装单粒小灯珠制成的多点光源用量的1/10；散射剂和荧光粉封装均匀用量小于环氧树脂胶用量的5%。
4）见图3，将上述整体封装芯片8贴在基板9上，基板起导热和支撑作用，一般用铝板制作。带基板的整体封装芯片安装在散热器10上：最后整体装入金属灯罩11内，金属灯罩采用压铸铝，便制成集成封装大功率LED照明光源12，照明光源功率为90瓦。
上述方法制作的LED照明路灯包括如下部分：①见图5，在照明灯灯壳13内，固定有集成封装大功率LED照明光源12和与它连接的控制电路14。控制电路如下组成: 路灯交流电源(AC) 220V接手动控制开关、变压整流电路将交流220V整流为直流DC24V；再经恒流驱动控制电路接照明光源12的两极8a和8b，光源功率为90瓦。此路灯灯壳13外设灯杆和支撑件15。在灯壳13内按使用需要调整光源位置。②见图3，LED照明光源12如下组成：压铸铝灯罩11内固定有贴在铝板制作的基板9上的整体封装芯片8；基板安装在散热器10上。散热器10可采用陶瓷和铝合金材料制作的散热器10.1；散热器10也可以作成与灯罩内表面形状相配合的形状或贴于灯罩内表面融合为一体的散热器10.2。见图4，在整体封装芯片8和灯罩11间装有反光件11.1。在与光源相配合位置装凸镜。③见图2，整体封装芯片8内有：光源芯片5、衬底2和外围的环氧树脂胶、散射剂和荧光粉混合体形成的整体封装层。整体封装芯片每边长B8为30mm-40mm的正方形。④见图1，光源芯片5由六块发光芯片4按所需功率90瓦进行两块串联和三块并联而成。⑤见图1，发光芯片4内有：有机材料制作的衬底2上放置有一定间距的六个单个白光LED晶片1，并有导电胶状物银胶3将六个晶片粘结固定为整体块状体。单个白光LED晶片1的功率为2.5瓦。
工业实用性
本发明产品适于工业化生产。

Claims (1)

  1. 1、集成封装大功率LED照明光源制作方法，其特征包括下列步骤：
    1)按照照明灯要求的功率大小，选择若干单个白光LED晶片(1)，按一定间距放于非金属材料制作的衬底(2)上，用导电胶状物银胶(3)将若干单个白光LED晶片粘结固定成为发光芯片(4)，每个晶片功率为0.01 -3瓦；
    2)将一块以上发光芯片(4)进行串联或/和并联连接，达到所需功率；成为光源芯片(5) ；
    3)将光源芯片(5)和衬底用环氧树脂胶（6）、散射剂和荧光粉（7）的混合体进行整体封装，成为边长小于40mm的正方形或长方形的整体封装芯片(8)；
    4) 将上述整体封装芯片贴在金属材料制作的基板(9)上；再连同基板安装在散热器(10)上；最后整体装入金属灯罩(11)内，便制成集成封装大功率LED照明光源(12)，每个LED照明光源功率大于30瓦。
    2、按权利要求1所述的LED照明光源制作方法,其特征是环氧树脂胶、散射剂和荧光粉总量小于现有相同功率独立封装单粒小灯珠制成的多点光源用量的1/10；散射剂和荧光粉用量小于环氧树脂胶用量的5%。
    3、按权利要求1所述的LED照明光源制作方法制成的LED照明灯，其特征是此LED照明灯包括如下部分：
    ①在照明灯灯壳(13)内，固定有集成封装大功率LED照明光源(12)和与它连接的控制电路(14)；每个LED照明光源(12)功率大于30瓦；
    ②LED照明光源(12)包括：金属灯罩(11)内固定有贴在金属材料制作的基板(9)上的整体封装芯片(8)；基板安装在散热器(10)上；
    ③整体封装芯片(8)内有:光源芯片(5)、衬底(2)和外围的环氧树脂胶、散射剂和荧光粉混合体形成的整体封装层；整体封装芯片为边长小于40mm的正方形或长方形；
    ④光源芯片(5)由一块以上发光芯片(4)按所需功率进行串联或/和并联而成；
    ⑤发光芯片(4)内有：非金属材料制作的衬底(2)上放置有一定间距的若干单个白光LED晶片(1)， 并有导电胶状物银胶(3)将若干晶片粘结固定为整体的块状体；单个白光LED晶片的功率为0.01 -3瓦。
    4、按权利要求3所述的LED照明灯，其特征是光源功率为30瓦-120瓦；整体封装芯片为边长为30mm-40mm的正方形。
    5、按权利要求3或4所述的LED照明灯，其特征是散热器(10)的形状与灯罩内表面形状相配合或贴于灯罩内表面融合为一体。
PCT/CN2010/071556 2010-01-18 2010-04-03 集成封装大功率led照明光源制作方法及led照明灯 WO2011085568A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110783219A (zh) * 2019-11-04 2020-02-11 山东开元电子有限公司 集成封装led载体热阻测试加热器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
CN102339820A (zh) * 2011-09-19 2012-02-01 昆山隆泰电子有限公司 集成封装led灯泡
CN102569284B (zh) * 2012-03-16 2016-03-30 广东科立盈光电技术有限公司 新型led发光芯片及其组装形成的led灯
CN105400470B (zh) * 2015-12-01 2018-03-09 杭州新湖电子有限公司 一种led白光数码管封装胶及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007081152A1 (en) * 2006-01-13 2007-07-19 Seoul Semiconductor Co., Ltd. Led lamp
CN101173758A (zh) * 2007-09-20 2008-05-07 胡家培 无反射高出光率单元wled功率扩容式大功率wled光源
CN201133636Y (zh) * 2007-12-03 2008-10-15 林复基 大功率平板led用散热装置
CN201255334Y (zh) * 2008-09-02 2009-06-10 东莞市福地电子材料有限公司 一种led路灯
CN201273472Y (zh) * 2008-09-01 2009-07-15 曾义诚 改进型发光二极管灯具结构
CN201359209Y (zh) * 2008-11-25 2009-12-09 董丽霞 平板式透镜一体化led光源

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100590869C (zh) * 2008-06-04 2010-02-17 深圳市科纳实业有限公司 大功率led封装结构
CN101404317A (zh) * 2008-11-12 2009-04-08 鹤山丽得电子实业有限公司 一种大功率白光led封装方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007081152A1 (en) * 2006-01-13 2007-07-19 Seoul Semiconductor Co., Ltd. Led lamp
CN101173758A (zh) * 2007-09-20 2008-05-07 胡家培 无反射高出光率单元wled功率扩容式大功率wled光源
CN201133636Y (zh) * 2007-12-03 2008-10-15 林复基 大功率平板led用散热装置
CN201273472Y (zh) * 2008-09-01 2009-07-15 曾义诚 改进型发光二极管灯具结构
CN201255334Y (zh) * 2008-09-02 2009-06-10 东莞市福地电子材料有限公司 一种led路灯
CN201359209Y (zh) * 2008-11-25 2009-12-09 董丽霞 平板式透镜一体化led光源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110783219A (zh) * 2019-11-04 2020-02-11 山东开元电子有限公司 集成封装led载体热阻测试加热器

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