CN103413885A - Manufacturing method of isolation type COB light source module - Google Patents
Manufacturing method of isolation type COB light source module Download PDFInfo
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- CN103413885A CN103413885A CN2013103307360A CN201310330736A CN103413885A CN 103413885 A CN103413885 A CN 103413885A CN 2013103307360 A CN2013103307360 A CN 2013103307360A CN 201310330736 A CN201310330736 A CN 201310330736A CN 103413885 A CN103413885 A CN 103413885A
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Abstract
The invention discloses a manufacturing method of an isolation type COB light source module. The manufacturing method of the isolation type COB light source module comprises the steps of crystal fixing, namely a crystal fixing position on a substrate is coated with liquid crystal fixing glue, an LED chip is attached to the crystal fixing position, and then the substrate is roasted; wire welding, namely one end of a gold wire is welded on a welding disc of the crystal fixing position, and the other end of the gold wire is welded on the electrode of the LED chip; surrounding dam installing, namely organic silica gel is dispersed on the substrate to form an annular surrounding dam; silica gel isolating layer manufacturing, namely liquid silica gel is dropped in the surrounding dam, and the substrate is roasted to enable the liquid silica gel to be solidified to form a silica gel isolating layer; silica gel fluorescent layer manufacturing, namely fluorescent powder and the liquid silica gel are evenly mixed to obtain liquid fluorescent silica gel, the liquid fluorescent silica gel is dropped onto the silica gel isolating layer, and the substrate is roasted to enable the liquid fluorescent silica gel to be solidified to form a silica gel fluorescent layer. The manufacturing method of the isolation type COB light source module has the advantages that the service life of the LED chip can be prolonged and light emitting quality can be optimized.
Description
Technical field
The present invention relates to a kind of manufacture method of isolated COB light source module.
Background technology
Utilize the produced COB light source of traditional C OB light source module manufacture method to generally comprise a plurality of blue-light LED chips, on LED chip, be coated with the yellow fluorescent powder layer of silica gel.The blue-light excited yellow fluorescent powder that blue-light LED chip sends sends green-yellow light, and the blue light that this yellow-green light and blue-light LED chip send forms white light.This LED chip directly contacts with fluorescent material, and while due to LED chip, using, this,, as heater, makes fluorescent material be influenced by heat in long-term use procedure and cause light decay more serious, thereby having influence on the quality of LED.In addition, in the LED chip use procedure, the loss of blue-light excited fluorescent material meeting produce power, and then generation heat, the heat accumulation that this heat and LED chip produce is in this fluorescent powder silica gel layer, because silica gel is bad radiator, make the temperature of this fluorescent powder silica gel layer can be up to 220 ℃, this temperature can affect life-span and the quality of LED chip to a great extent.This thermal effect has reduced the quantum efficiency of fluorescent material, and then has influence on whole luminous efficiency.In addition, the interior residual air that has of fluorescent powder silica gel layer that traditional C OB light source module manufacture method is produced, make in the fluorescent powder silica gel layer a plurality of bubbles arranged, and affects the optical quality of COB light source.
Summary of the invention
For the deficiencies in the prior art, purpose of the present invention is intended to provide a kind of manufacture method of the isolated COB light source module solved the problems of the technologies described above.
For achieving the above object, the present invention adopts following technical scheme:
A kind of manufacture method of isolated COB light source module comprises the following steps:
The die bond step: the liquid crystal-bonding adhesive of point on the die bond position of substrate is mounted on LED chip on the die bond position, then substrate is toasted, so that crystal-bonding adhesive solidifies;
Bonding wire step a: end of gold thread is welded on the pad of this die bond position, the other end of gold thread is welded on the terminal of this LED chip;
Box dam installation steps: organic silica gel is carried out to a glue on substrate to form the box dam of a ring-type, and all LED chips all are positioned at this box dam;
Silica gel separator making step: liquid-state silicon gel is dripped in this box dam, make liquid-state silicon gel cover all LED chips, then substrate is toasted so that the liquid-state silicon gel in box dam solidify to form the silica gel separator;
Silica gel fluorescence coating making step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, again the liquid fluorescence silica gel of predetermined amount is dripped on this silica gel separator, substrate is toasted, so that liquid fluorescence silica gel solidify to form the silica gel fluorescence coating.
Further, silica gel fluorescence coating making step comprises following sub-step:
Point glue step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, more liquid fluorescence silica gel is dripped on the silica gel separator;
Baking procedure for the first time: substrate is positioned in baking box and toasts, and baking temperature is 85 degrees centigrade, and baking time is 1 hour;
Baking procedure for the second time: substrate is positioned in baking box and toasts, and baking temperature is 150 degrees centigrade, and baking time is 2 hours, so that liquid fluorescence silica gel solidify to form the silica gel fluorescence coating.
Further, the thickness of silica gel fluorescence coating is 0.5mm to 0.8mm.
Further, this substrate is provided with some equally distributed die bonds position, and each die bond position comprises and mount dish, positive terminal pad and negative terminal pad, and this mounts dish between positive terminal pad and negative terminal pad; This die bond step comprises following sub-step:
Point glue step: the liquid crystal-bonding adhesive of point on dish that mounts in the die bond position;
Mount step: LED chip is mounted on to mount dish upper, the positive terminal of LED chip and negative pole end are respectively over against positive terminal pad and the negative terminal pad of corresponding die bond position;
Baking procedure: substrate is placed in baking box and toasts, and baking temperature is 145 degrees centigrade to 155 degrees centigrade, and baking time is 2 hours.
Further, silica gel separator making step comprises following sub-step:
Point glue step: liquid-state silicon gel is dripped in this box dam, when state silica gel covers all LED chips fully and be uniformly distributed in this box dam, halt glue;
Baking procedure for the first time: substrate is positioned in baking box and toasts, and baking temperature is 85 degrees centigrade, and baking time is 1 hour;
Baking procedure for the second time: substrate is positioned in baking box and toasts, and baking temperature is 150 degrees centigrade, and baking time is 2 hours, so that the silica gel in box dam solidify to form a silica gel separator.
Further, the thickness of silica gel separator is 0.85mm to 1.05mm.
Further, the height of this box dam is 1.5mm to 2.5mm.
Beneficial effect of the present invention is as follows:
1, the silica gel separator of the prepared COB light source of said method module is kept apart LED chip and this silica gel fluorescence coating, make the silica gel fluorescence coating away from heater, and then avoid the heat that LED chip sends to assemble mutually and cause silica gel fluorescence coating high temperature with the heat of this silica gel fluorescence coating generation, and the temperature that can avoid the silica gel fluorescence coating has influence on LED chip 20, be conducive to extend the useful life of LED chip.
2, existing baking process often directly carries out high-temperature baking with fixing baking temperature, the silica gel rapid curing, make air fail all to discharge, thereby make in the silica gel after solidifying, a plurality of bubbles are arranged, affect optical quality, and this method is while toasting silica gel, by once toasting the air of removing in the silica gel solidification process, by secondary baking, make silica gel fully curing again, thereby can obtain bubble-free silica gel separator and silica gel fluorescence coating, can optimize the optical quality of COB light source.
The accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of the isolated COB light source of the present invention module.
Fig. 2 is the generalized section by the produced COB light source module of the COB light source module manufacture method of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described further:
Refer to Fig. 1, the present invention relates to a kind of manufacture method of isolated COB light source module, its preferred embodiments comprises step:
The die bond step: the liquid crystal-bonding adhesive of point on the die bond position of substrate, LED chip is mounted on the die bond position, substrate is toasted, so that crystal-bonding adhesive solidifies, thereby make LED chip be fixed on the die bond position, better adherence force is arranged.
Above-mentioned die bond step comprises following sub-step:
Wherein, this substrate is provided with some equally distributed die bonds position, and each die bond position comprises and mount dish, positive terminal pad and negative terminal pad, and this mounts dish between positive terminal pad and negative terminal pad.
Point glue step: at the liquid crystal-bonding adhesive of point on dish that mounts of die bond position, liquid crystal-bonding adhesive spreads to the outer rim that mounts dish.
Mount step: LED chip is mounted on to mount dish upper, the positive terminal of LED chip and negative pole end are respectively over against positive terminal pad and the negative terminal pad of corresponding die bond position.
Baking procedure: substrate is placed in baking box and toasts, and baking temperature is 145 degrees centigrade to 155 degrees centigrade, and baking time is 2 hours, and this baking condition can make bonding better between LED chip and substrate.
Bonding wire step a: end of gold thread is welded on the pad of this die bond position, the other end of gold thread is welded on the electrode of this LED chip, so that the pad of the electrode of LED chip and this die bond position is electrically connected.
The box dam installation steps: organic silicon rubber is carried out to a glue on substrate to form the box dam of a ring-type, and all LED chips all are positioned at this box dam, the height of this box dam is 1.5mm to 2.5mm.
Silica gel separator making step: liquid-state silicon gel is dripped in this box dam, make liquid-state silicon gel cover all LED chips, then substrate is toasted so that the liquid-state silicon gel in box dam solidify to form the silica gel separator.This step comprises following sub-step:
Point glue step: liquid-state silicon gel is dripped in this box dam, when state silica gel covers all LED chips fully and be uniformly distributed in this box dam, halt glue.
Baking procedure for the first time: substrate is positioned in baking box and toasts, baking temperature is 85 degrees centigrade, baking time is 1 hour, this can remove the bubble produced in the silica gel solidification process, thereby there is bubble in the layer of silica gel after avoiding solidifying, be conducive to optimize the light effect that the COB light source die forms product, also help micro-solidifying, can make the layer of silica gel after solidifying more even.
Baking procedure for the second time: substrate is positioned in baking box and toasts, baking temperature is 150 degrees centigrade, baking time is 2 hours, so that the silica gel in box dam is fully curing, forming thickness is the silica gel separator of 0.85mm to 1.05mm, it is isolated from the outside LED chip, the light extraction efficiency maximum of the silica gel separator of this thickness, and the fluorescent material launching efficiency is high.
Silica gel fluorescence coating making step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, again the liquid fluorescence silica gel of predetermined amount is dripped on this silica gel separator, substrate is toasted, so that liquid fluorescence silica gel solidify to form the silica gel fluorescence coating.
This step comprises following sub-step:
Point glue step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, more liquid fluorescence silica gel is dripped on the silica gel separator, the amount of liquid fluorescence silica gel can form the required color temperature value of product according to the COB light source die and regulate.
Baking procedure for the first time: substrate is positioned in baking box and toasts, baking temperature is 85 degrees centigrade, baking time is 1 hour, this can remove the bubble produced in liquid fluorescence silica gel solidification process, thereby there is bubble in the silica gel fluorescence coating after avoiding solidifying, be conducive to optimize the light effect that the COB light source die forms product, also help micro-solidifying, can make the layer of silica gel after solidifying more even.
Baking procedure for the second time: substrate is positioned in baking box and toasts, baking temperature is 150 degrees centigrade, baking time is 2 hours, so that the liquid fluorescence silica gel in box dam is fully curing, forming a thickness is the silica gel fluorescence coating of 0.5mm to 0.8mm, the silica gel fluorescence coating of this thickness range can make it along with temperature raises, the side-play amount minimum of colour temperature.
As shown in Figure 2, the produced COB light source module of this method comprises substrate 10, box dam circle 15, some LED chips 20, silica gel separator 30 and silica gel fluorescence coating 40.Between this box dam circle 15 and this substrate 10, form a chip installation area territory, some LED chips 20 all are mounted on this chip installation area territory, and this silica gel separator 30 is covered on this chip installation area territory, and this silica gel fluorescence coating 40 is covered on this silica gel separator 30.The refractive index of silica gel separator 30 is more than or equal to the refractive index of this silica gel fluorescence coating 40, to avoid the light that LED chip 20 sends, at silica gel separator 30, total reflection occurs, thereby increases luminous flux, optimizes light utilization efficiency.
This silica gel separator 30 is kept apart LED chip 20 and this silica gel fluorescence coating 40, make silica gel fluorescence coating 40 away from heater, and then avoid the heat that LED chip 20 sends to assemble mutually and cause silica gel fluorescence coating 40 high temperature with the heat of these silica gel fluorescence coating 40 generations, and the temperature that can avoid silica gel fluorescence coating 40 has influence on LED chip 20, be conducive to extend the useful life of LED chip 20.
For a person skilled in the art, can make other various corresponding changes and distortion according to technical scheme described above and design, and these all changes and the distortion all should belong to the protection range of the claims in the present invention within.
Claims (7)
1. the manufacture method of an isolated COB light source module, it is characterized in that: it comprises the following steps:
The die bond step: the liquid crystal-bonding adhesive of point on the die bond position of substrate is mounted on LED chip on the die bond position, then substrate is toasted, so that crystal-bonding adhesive solidifies;
Bonding wire step a: end of gold thread is welded on the pad of this die bond position, the other end of gold thread is welded on the terminal of this LED chip;
Box dam installation steps: organic silica gel is carried out to a glue on substrate to form the box dam of a ring-type, and all LED chips all are positioned at this box dam;
Silica gel separator making step: liquid-state silicon gel is dripped in this box dam, make liquid-state silicon gel cover all LED chips, then substrate is toasted so that the liquid-state silicon gel in box dam solidify to form the silica gel separator;
Silica gel fluorescence coating making step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, again the liquid fluorescence silica gel of predetermined amount is dripped on this silica gel separator, substrate is toasted, so that liquid fluorescence silica gel solidify to form the silica gel fluorescence coating.
2. the manufacture method of isolated COB light source module as claimed in claim 1, it is characterized in that: silica gel fluorescence coating making step comprises following sub-step:
Point glue step: fluorescent material and liquid-state silicon gel are stirred evenly and obtain liquid fluorescence silica gel by the preset ratio blending, more liquid fluorescence silica gel is dripped on the silica gel separator;
Baking procedure for the first time: substrate is positioned in baking box and toasts, and baking temperature is 85 degrees centigrade, and baking time is 1 hour;
Baking procedure for the second time: substrate is positioned in baking box and toasts, and baking temperature is 150 degrees centigrade, and baking time is 2 hours, so that liquid fluorescence silica gel solidify to form the silica gel fluorescence coating.
3. the manufacture method of isolated COB light source module as claimed in claim 2, it is characterized in that: the thickness of silica gel fluorescence coating is 0.5mm to 0.8mm.
4. the manufacture method of isolated COB light source module as claimed in claim 2, it is characterized in that: this substrate is provided with some equally distributed die bonds position, each die bond position comprises and mounts dish, positive terminal pad and negative terminal pad, and this mounts dish between positive terminal pad and negative terminal pad; This die bond step comprises following sub-step:
Point glue step: the liquid crystal-bonding adhesive of point on dish that mounts in the die bond position;
Mount step: LED chip is mounted on to mount dish upper, the positive terminal of LED chip and negative pole end are respectively over against positive terminal pad and the negative terminal pad of corresponding die bond position;
Baking procedure: substrate is placed in baking box and toasts, and baking temperature is 145 degrees centigrade to 155 degrees centigrade, and baking time is 2 hours.
5. the manufacture method of isolated COB light source module as claimed in claim 1, it is characterized in that: silica gel separator making step comprises following sub-step:
Point glue step: liquid-state silicon gel is dripped in this box dam, when state silica gel covers all LED chips fully and be uniformly distributed in this box dam, halt glue;
Baking procedure for the first time: substrate is positioned in baking box and toasts, and baking temperature is 85 degrees centigrade, and baking time is 1 hour;
Baking procedure for the second time: substrate is positioned in baking box and toasts, and baking temperature is 150 degrees centigrade, and baking time is 2 hours, so that the silica gel in box dam solidify to form a silica gel separator.
6. the manufacture method of isolated COB light source module as claimed in claim 5, it is characterized in that: the thickness of silica gel separator is 0.85mm to 1.05mm.
7. isolated COB light source module manufacture method as claimed in claim 1, it is characterized in that: the height of this box dam is 1.5mm to 2.5mm.
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| CN2013103307360A CN103413885A (en) | 2013-07-31 | 2013-07-31 | Manufacturing method of isolation type COB light source module |
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| CN104022213A (en) * | 2014-04-11 | 2014-09-03 | 深圳市迈克光电子科技有限公司 | Remote phosphor COB integrated light source and preparation method thereof |
| CN104022109A (en) * | 2014-04-11 | 2014-09-03 | 深圳市迈克光电子科技有限公司 | Spot-free COB integrated light source with lens and preparation method thereof |
| CN105826453A (en) * | 2016-05-09 | 2016-08-03 | 广州硅能照明有限公司 | Preparation method of COB optical module and COB optical module |
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| CN107470091A (en) * | 2017-09-14 | 2017-12-15 | 深圳市鑫龙邦科技有限公司 | A kind of LED COB box dam dispensing all-in-ones and its implementation |
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| CN109285469A (en) * | 2018-10-31 | 2019-01-29 | 武汉华星光电技术有限公司 | A kind of area source display module |
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