CN101976720A - Light emitting diode (LED) and encapsulating method thereof - Google Patents
Light emitting diode (LED) and encapsulating method thereof Download PDFInfo
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- CN101976720A CN101976720A CN2010102797405A CN201010279740A CN101976720A CN 101976720 A CN101976720 A CN 101976720A CN 2010102797405 A CN2010102797405 A CN 2010102797405A CN 201010279740 A CN201010279740 A CN 201010279740A CN 101976720 A CN101976720 A CN 101976720A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
The invention discloses a light emitting diode (LED) and an encapsulating method thereof. The method comprises the following steps: providing a stacker with a groove and an LED blue light wafer, depositing or evaporating metal or alloy on the bottom of the blue light wafer, fixing the LED blue light wafer with metal or alloy deposited or evaporated on the bottom in the groove by solid crystal adhesive, and opening a rubber overflow groove leading the groove to be communicated with the outside on the surface of the stacker; electrically connecting negative and positive electrodes of the LED blue light wafer with negative and positive electrodes of the stacker respectively by lead wires; and encapsulating and molding the surface of the LED blue light wafer in the groove by external seal adhesive. By opening the rubber overflow groove on the surface of the stacker, residual external seal adhesive can flow to the outside of the groove through the rubber overflow groove when the external seal adhesive is used for encapsulation, and a horizontal plane is formed in the whole groove, so the light emitted by the LED blue light wafer can be radiated uniformly through the rubber on the horizontal plane, and the light emitting uniformity of the whole LED is consistent.
Description
Technical field
The present invention relates to a kind of lamp, particularly relate to a kind of LED and method for packing thereof.
Background technology
White light LEDs is as a kind of new type light source, rely on it low power consuming, pollution-free, volume is little and advantage such as flexibly easy to use, be widely used in building, the small size decorative lighting of solar street light, flashlight, auto lamp, desk lamp, backlight, shot-light, garden, wall lamp, household and collection are decorated with advertisement is the commercial lighting etc. of one.
Application number is that 200910109512.0 Chinese patent discloses a kind of LED lamp and method for packing, comprises a LED wafer and carries the stacker of this LED wafer, and the surface of described LED wafer also is packaged with the outer sealing (not shown) of one deck.
Yet, the variable thickness of the outer sealing (not shown) of the above-mentioned LED of spreading upon wafer surface causes, be that intrinsic LED wafer height is not in different size with the space of consolidating LED wafer height in the metal cup, so it is also inconsistent to smear the thickness of outer sealing, and outer sealing glue is because the glue amount of viscosity of itself and LED wafer top is inhomogeneous, the surface that so makes whole packaging plastic is not on a horizontal plane, cause the LED issued light inhomogeneous easily, thereby also cause the whole LED bright dipping inhomogeneous.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of LED and method for packing thereof, and that can improve LED goes out light consistency and uniformity.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of LED method for packing is provided, comprise the steps: to provide one to have the LED blue light wafer that the stacker of Baltimore groove and a bottom deposit or evaporation have metal or alloy, there is the bottom of metal or alloy to be fixed in the Baltimore groove described LED blue light wafer deposition or evaporation by crystal-bonding adhesive, on the surface of stacker, offers the excessive glue groove that Baltimore groove is in communication with the outside; Be electrically connected with the positive and negative electrode of described stacker respectively with the positive and negative electrode of lead described LED blue light wafer; Carry out encapsulated moulding in the blue light of LED described in Baltimore groove wafer surface with outer sealing.
Wherein, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
Wherein, comprise step respectively with before the positive and negative electrode of described stacker at the positive and negative electrode that connects LED blue light wafer with lead: on stacker, downcut one jiao, form a packaging label place that is used for pasting packaging label, described excessive glue groove is arranged on the surface of described stacker in contiguous packaging label place.
Wherein, by comprising step before the step that described LED blue light wafer is fixed on after the step on the stacker, the positive and negative electrode of described LED blue light wafer is electrically connected with the positive and negative electrode of described stacker respectively with lead with crystal-bonding adhesive: toast reinforcing.
Wherein, carry out also comprising step after the encapsulated moulding with outer sealing again: the finished product after the moulding is toasted once more, peel off then, the beam split color separation, paste band.
Wherein, described outer sealing is epoxy resin OXY or silica gel SILICONE or silicones or does not have shadow UV glue.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of LED is provided, the stacker that comprises a LED blue light wafer and this LED blue light wafer of carrying, offer a Baltimore groove on the described stacker, described LED blue light wafer is arranged in the described Baltimore groove, the bottom of described LED blue light wafer is provided with metal or alloy, just all have on described LED blue light wafer and the described stacker, negative electrode, the positive and negative electrode of described LED blue light wafer is electrically connected by lead with the positive and negative electrode of described stacker respectively, sealing outside the surface of described LED blue light wafer is provided with in the described stacker offers the excessive glue groove that Baltimore groove is in communication with the outside on the surface of described stacker.
Wherein, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
Wherein, the Yi Jiaochu of described stacker has a packaging label place that is used for pasting packaging label.
Wherein, described metal is golden Au, copper Cu, tin Sn, silver-colored Ag or aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.
The invention has the beneficial effects as follows: the LED that is different from prior art is owing to the variable thickness that spreads upon the outer sealing of LED blue light wafer surface causes, colloid does not cause the uneven situation of LED bright dipping on a horizontal plane, LED of the present invention is by offering an excessive glue groove on the surface of described stacker, the glue groove that overflows is in communication with the outside Baltimore groove, so Baltimore groove is encapsulated fill outside during sealing, unnecessary irregular outer sealing will go out outside the Baltimore groove by the glue concentrated flow that overflows on the Baltimore groove inner surface, make and form a horizontal plane in the whole Baltimore groove, thereby the light that LED blue light wafer sends can exhale uniformly by the colloid that is horizontal plane, the light-emitting uniformity unanimity of whole LED.
Description of drawings
Fig. 1 is the vertical view schematic diagram of LED of the present invention;
Fig. 2 is the schematic cross-section of LED of the present invention;
Fig. 3 is the stereogram of LED of the present invention;
Fig. 4 adopts the present invention to make the process chart of LED.
Embodiment
By describing technology contents of the present invention, structural feature in detail, realized purpose and effect, give explanation below in conjunction with execution mode and conjunction with figs. are detailed.
See also Fig. 1, Fig. 2 and Fig. 3, LED of the present invention comprises a LED blue light wafer 1 and the stacker 2 that carries this LED blue light wafer 1.Has Baltimore groove 21 on the described stacker 2.Described LED blue light wafer 1 is fixed in the described Baltimore groove 21 by a chemical crystal-bonding adhesive 3, and in the present embodiment, described crystal-bonding adhesive 3 is elargol or insulating cement.Sealing 5 outside the surface of described LED blue light wafer 1 is provided with in the described Baltimore groove 21 offers the excessive glue groove 22 that Baltimore groove 21 is in communication with the outside on the surface of described stacker 2, described excessive glue groove 22 degree of depth are 1/8～1/6 of described Baltimore groove 21 degree of depth.
LED of the present invention is by offering an excessive glue groove 22 on the surface of described stacker 2, the glue groove 22 that overflows is in communication with the outside Baltimore groove 21, so stacker 2 when the outer sealing 5 of encapsulation unnecessary outer sealing 5 just can be by excessive glue groove 22 outflow Baltimore grooves 21 outside, thereby make in the whole Baltimore groove 21 and form a horizontal plane, the light that LED blue light wafer sends just can exhale uniformly by the colloid that is horizontal plane, so the light-emitting uniformity unanimity of whole LED.
Wherein, described LED blue light wafer 1 has positive and negative two electrodes that can switch on, and described stacker 2 has positive and negative electrode.With lead 4 positive and negative electrode of described LED blue light wafer 1 is welded with the positive and negative electrode of described stacker 2 respectively.Described lead is metal wires such as gold thread, aluminum steel, copper cash or silver-colored line.
Described LED blue light wafer comprises Sapphire Substrate and deposition or the evaporation metal or alloy in the sapphire bottom, and described metal is golden Au, copper Cu, tin Sn, silver-colored Ag, aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.The described metal or alloy that is provided with in the Sapphire Substrate bottom helps the light that LED blue light wafer sends is more reflected on the one hand, can increase radiating effect on the other hand.
In the present embodiment, the Yi Jiaochu of described stacker 2 has a packaging label place 23 that is used for pasting packaging label.Described excessive glue groove 22 is arranged on the surface of described stacker 2 in contiguous packaging label place 23.
In one embodiment, described outer sealing 5 is epoxy resin OXY or silica gel SILICONE or silicones or does not have shadow UV glue.
See also Fig. 4, the invention provides a kind of LED method for packing and comprise the steps:
At first, one stacker 2 and a LED blue light wafer 1 are provided, on stacker 2, offer a Baltimore groove 21, bottom deposit or evaporation metal or alloy at blue light wafer 1, there is the described LED blue light wafer 1 of metal or alloy to be fixed in the described Baltimore groove 21 bottom deposit or evaporation by crystal-bonding adhesive, on the surface of stacker 2, offers the excessive glue groove 22 that Baltimore groove 21 is in communication with the outside;
Secondly, above-mentioned semi-finished product are put into baking box carry out baking-curing;
Again, with lead 4 positive and negative electrode of described LED blue light wafer 1 is welded with the positive and negative electrode of described stacker 2 respectively;
Then, stacker 2 is carried out preheating, above-mentioned semi-finished product after connecting by lead are put into baking box toast;
Carry out encapsulated moulding in the wafer surface of LED blue light described in the Baltimore groove 21 with outer sealing 5;
Then, will continue to put into baking box with the semi-finished product after outer sealing 5 encapsulation and carry out baking-curing;
At last, test, the LED finished product after the moulding is toasted, peels off, band is pasted in beam split color separation again, the packing warehouse-in.
The LED that is different from prior art is owing to the variable thickness that spreads upon the outer sealing of LED blue light wafer surface causes, and covering glue is owing to the glue amount of the inhomogeneous LED of the making wafer of the glue amount top of viscosity own and LED wafer top does not cause the uneven situation of LED bright dipping on a horizontal plane, LED of the present invention is by offering an excessive glue groove on the surface of described stacker, the glue groove that overflows is in communication with the outside Baltimore groove, so Baltimore groove is encapsulated fill outside during sealing, unnecessary irregular outer sealing will go out outside the Baltimore groove by the glue concentrated flow that overflows on the Baltimore groove inner surface, make and form a horizontal plane in the whole Baltimore groove, thereby the light that LED blue light wafer sends can exhale uniformly by the colloid that is horizontal plane, the light-emitting uniformity unanimity of whole LED.
In sum, the present invention can solve the uneven situation of LED bright dipping, the light-emitting uniformity unanimity of the LED that use method for packing of the present invention is made, and bright dipping is effective.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. the method for packing of a LED is characterized in that, comprises the steps:
Provide one to have the LED blue light wafer that the stacker of Baltimore groove and a bottom deposit or evaporation have metal or alloy, there is the bottom of metal or alloy to be fixed in the Baltimore groove described LED blue light wafer deposition or evaporation by crystal-bonding adhesive, on the surface of stacker, offers the excessive glue groove that Baltimore groove is in communication with the outside;
Be electrically connected with the positive and negative electrode of described stacker respectively with the positive and negative electrode of lead described LED blue light wafer;
Encapsulated moulding is carried out with outer sealing in surface at the blue light of LED described in Baltimore groove wafer.
2. the method for packing of LED according to claim 1 is characterized in that, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
3. the method for packing of LED according to claim 1, it is characterized in that, comprise step respectively with before the positive and negative electrode of described stacker at the positive and negative electrode that connects LED blue light wafer with lead: on stacker, downcut one jiao, form a packaging label place that is used for pasting packaging label, described excessive glue groove is arranged on the contiguous packaging label place on described stacker surface.
4. the method for packing of LED according to claim 3, it is characterized in that, by comprising step before the step that described LED blue light wafer is fixed on after the step on the stacker, the positive and negative electrode of described LED blue light wafer is electrically connected with the positive and negative electrode of described stacker respectively with lead with crystal-bonding adhesive: toast reinforcing.
5. the method for packing of LED according to claim 4 is characterized in that, carries out also comprising step after the encapsulated moulding with outer sealing: the finished product after the moulding is toasted once more, peel off then, the beam split color separation, paste band.
6. the method for packing of LED according to claim 1 is characterized in that, described outer sealing is epoxy resin OXY or silica gel SILICONE or silicones or does not have shadow UV glue.
7. LED, the stacker that comprises a LED blue light wafer and this LED blue light wafer of carrying, offer a Baltimore groove on the described stacker, described LED blue light wafer is arranged in the described Baltimore groove, the bottom of described LED blue light wafer is provided with metal or alloy, just all have on described LED blue light wafer and the described stacker, negative electrode, the positive and negative electrode of described LED blue light wafer is electrically connected by lead with the positive and negative electrode of described stacker respectively, it is characterized in that, sealing outside the surface of described LED blue light wafer is provided with in the described stacker offers the excessive glue groove that Baltimore groove is in communication with the outside on the surface of described stacker.
8. LED according to claim 7 is characterized in that, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
9. LED according to claim 8 is characterized in that, the Yi Jiaochu of described stacker has a packaging label place that is used for pasting packaging label.
10. LED according to claim 7 is characterized in that, described metal is golden Au, copper Cu, tin Sn, silver-colored Ag or aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102797405A CN101976720B (en) | 2010-09-13 | 2010-09-13 | Light emitting diode (LED) and encapsulating method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102797405A CN101976720B (en) | 2010-09-13 | 2010-09-13 | Light emitting diode (LED) and encapsulating method thereof |
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| CN101976720A true CN101976720A (en) | 2011-02-16 |
| CN101976720B CN101976720B (en) | 2013-06-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738324A (en) * | 2012-04-25 | 2012-10-17 | 江苏汉莱科技有限公司 | LED (light-emitting diode) COB (Chip on Board) packaging technology and applications thereof |
| CN104112806A (en) * | 2013-04-17 | 2014-10-22 | 展晶科技(深圳)有限公司 | Light emitting diode and packaging structure thereof |
| US10373535B2 (en) | 2013-12-31 | 2019-08-06 | Ultravision Technologies, Llc | Modular display panel |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
| US10871932B2 (en) | 2013-12-31 | 2020-12-22 | Ultravision Technologies, Llc | Modular display panels |
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| JPH0738154A (en) * | 1993-07-16 | 1995-02-07 | Sharp Corp | Mid chip type light emitting element |
| US20050012108A1 (en) * | 2003-03-03 | 2005-01-20 | Ming-Der Lin | Light emitting diode package structure |
| CN101807629A (en) * | 2009-02-12 | 2010-08-18 | 亿光电子工业股份有限公司 | Light emitting diode packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0738154A (en) * | 1993-07-16 | 1995-02-07 | Sharp Corp | Mid chip type light emitting element |
| US20050012108A1 (en) * | 2003-03-03 | 2005-01-20 | Ming-Der Lin | Light emitting diode package structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738324A (en) * | 2012-04-25 | 2012-10-17 | 江苏汉莱科技有限公司 | LED (light-emitting diode) COB (Chip on Board) packaging technology and applications thereof |
| CN102738324B (en) * | 2012-04-25 | 2013-07-10 | 江苏汉莱科技有限公司 | LED (light-emitting diode) COB (Chip on Board) packaging technology and applications thereof |
| CN104112806A (en) * | 2013-04-17 | 2014-10-22 | 展晶科技(深圳)有限公司 | Light emitting diode and packaging structure thereof |
| US10373535B2 (en) | 2013-12-31 | 2019-08-06 | Ultravision Technologies, Llc | Modular display panel |
| US10380925B2 (en) | 2013-12-31 | 2019-08-13 | Ultravision Technologies, Llc | Modular display panel |
| US10410552B2 (en) | 2013-12-31 | 2019-09-10 | Ultravision Technologies, Llc | Modular display panel |
| US10540917B2 (en) | 2013-12-31 | 2020-01-21 | Ultravision Technologies, Llc | Modular display panel |
| US10871932B2 (en) | 2013-12-31 | 2020-12-22 | Ultravision Technologies, Llc | Modular display panels |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
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| CN101976720B (en) | 2013-06-26 |
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