CN102569595A - Packaging structure of light-emitting diode - Google Patents
Packaging structure of light-emitting diode Download PDFInfo
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- CN102569595A CN102569595A CN2010106114807A CN201010611480A CN102569595A CN 102569595 A CN102569595 A CN 102569595A CN 2010106114807 A CN2010106114807 A CN 2010106114807A CN 201010611480 A CN201010611480 A CN 201010611480A CN 102569595 A CN102569595 A CN 102569595A
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Abstract
A packaging structure of a light-emitting diode comprises a support, a first electrode, a second electrode and a light-emitting diode chip, wherein the first electrode, the second electrode and the light-emitting diode chip are arranged on the support. The first electrode comprises an electrode portion and a reflection portion integrally connected with the electrode portion, the second electrode comprises an electrode portion and a reflection portion integrally connected with the electrode portion, the light-emitting diode chip is respectively and electrically connected with the electrode portion of the first electrode and the electrode portion of the second electrode, and the reflection portion of the first electrode and the reflection portion of the second electrode jointly surround the light-emitting diode chip to reflect light emitted by the light-emitting diode chip back. The packaging structure of the light-emitting diode uses the reflection portion of the first electrode and the reflection portion of the second electrode as a reflection cup to reflect the light emitted by the light-emitting diode chip back, and the packaging structure is simple and reliable in structure.
Description
Technical field
The present invention relates to the encapsulating structure of a kind of encapsulating structure, particularly a kind of light-emitting diode.
Background technology
Than traditional light emitting source; Light-emitting diode (Light Emitting Diode; LED) have advantages such as in light weight, that volume is little, pollution is low, the life-span is long; It is applied in the middle of each field, like street lamp, traffic lights, signal lamp, shot-light and decorative lamp or the like as a kind of novel light emitting source more and more.
Common package structure for LED generally includes substrate, is arranged on electrode, the light-emitting diode chip for backlight unit on the substrate and is centered around light-emitting diode chip for backlight unit reflector on every side.Yet in the prior art, reflector often adopts plastic material to process, and makes package structure for LED produce unwanted specific light field, influences the optical characteristics of package structure for LED.In addition; Reflector, electrode are separately fixed on the substrate, and manufacturing process is complicated, and because the engaging force between reflector, electrode and the substrate is not good enough; Make the reliability of package structure for LED reduce, directly have influence on the useful life of package structure for LED.
In view of this, be necessary to provide a kind of package structure for LED with preferable reliability and optical property.
Summary of the invention
Below will a kind of package structure for LED with preferable reliability be described with embodiment.
A kind of package structure for LED; Comprise support, be arranged on first electrode, second electrode and light-emitting diode chip for backlight unit on the support; This first electrode comprises the reflecting part of an electrode part, one connection electrode portion; This second electrode comprises the reflecting part of electrode part, one connection electrode portion; Said light-emitting diode chip for backlight unit electrically connects the electrode part of first electrode, the electrode part of second electrode respectively, and the reflecting part one common peripheral of the reflecting part of said first electrode, second electrode reflects away with the light that light-emitting diode chip for backlight unit is sent around light-emitting diode chip for backlight unit.
Package structure for LED of the present invention reflects away the light that light-emitting diode chip for backlight unit sends as reflector through the reflecting part of first electrode, second electrode, and is simple and reliable for structure.
Description of drawings
Fig. 1 is the vertical view of the package structure for LED of one embodiment of the invention.
Fig. 2 is the generalized section of Fig. 1 package structure for LED.
Fig. 3 is the upward view of Fig. 1 package structure for LED.
The main element symbol description
Package structure for LED 10
Support 20
First electrode 30
Electrode part 31,41
Bottom surface 311,411
End face 312,412
Sidepiece 313,413
Otch 314,414
Reflecting part 32,42
Embedded Division 33,43
Ora terminalis 335,435
Contact site 34,44
Second electrode 40
Light-emitting diode chip for backlight unit 50
Encapsulated layer 60
Embodiment
See also Fig. 1 to Fig. 3, the package structure for LED 10 that one embodiment of the invention provides comprises a support 20, be embedded at first electrode 30 and second electrode 40 in the support 20, be provided with and first electrode 30 on light-emitting diode chip for backlight unit 50 and the encapsulated layer 60 of encapsulation LED chip 50.
These support 20 rectangular settings in other embodiments can be according to specific demand and corresponding adjustment.This support 20 utilizes the material of high heat conductive insulating to constitute, like macromolecular compound, silicon or pottery.This support 20 has a first surface 21 and and first surface 21 opposing second surface 22.These support 20 middle parts are provided with storage tank (figure is mark not) so that light-emitting diode chip for backlight unit 50 and encapsulated layer 60 to be set.
Said first electrode 30 is made into integration by metal material, and its thickness is less than the thickness of support 20.First electrode 30 is half plate-like setting, comprise one place electrode part 31, self-electrode portion 31 in the storage tank of support 20 make progress outward extending reflecting part 32, connect the Embedded Division 33 of reflecting part 32 apical margins.Said electrode part 31 is the tabular setting.This electrode part 31 has a bottom surface 311 and the end face 312 relative with bottom surface 311.This end face 312 is used to settle said light-emitting diode chip for backlight unit 50, and first surface 21 coplanes of this bottom surface 311 and support 20 311 are passed to the external world with heat that light-emitting diode chip for backlight unit 50 is produced from the bottom surface.This electrode part 31 has a sidepiece 313 near second electrode 40, and these sidepiece 313 bottoms are provided with a kerf 314.These reflecting part 32 self-electrode portion 31 edges except that sidepiece 313 tilt and extend upward.The surface of reflecting part 32 can be plated and established thin layer of reflective material, like argent.This Embedded Division 33 is arranged at support 20 inside, is bending setting.Embedded Division 33 and the reflecting part 32 common n shape arcuate configuration that form combine to hold each other with support 20.The end face of Embedded Division 33 (figure is mark not) is separated by a distance with the second surface 22 of support 20.Embedded Division 33 is away from an ora terminalis 335 of reflecting part 32 and first surface 21 coplanes of support 20.Said first electrode 30 also comprises the contact site 34 that the ora terminalis 335 of two self-embedding portions 33 extends.
The structural similarity of said second electrode 40 and first electrode 30, and with the insulation of being separated by of first electrode 30.Second electrode 40 comprise electrode part 41, the self-electrode portion 41 in the storage tank that places support 20 make progress outward extending reflecting part 42, connect the Embedded Division 43 of reflecting part 42 apical margins.This electrode part 41 has a bottom surface 411 and the end face 412 relative with bottom surface 411.First surface 21 coplanes of this bottom surface 411 and support 20.This electrode part 41 has a sidepiece 413 near first electrode 30, and these sidepiece 413 bottoms are provided with a kerf 414.These reflecting part 42 self-electrode portion 41 edges except that sidepiece 413 tilt and extend upward.This Embedded Division 43 is arranged at support 20 inside, is bending setting.Embedded Division 43 and reflecting part 42 be common to form the n shapes portion that arches upward, to combine closely with support 20.Embedded Division 43 is away from an ora terminalis 435 of reflecting part 42 and first surface 21 coplanes of support 20.Said second electrode 40 also comprises the contact site 44 that the ora terminalis 435 of two self-embedding portions 43 extends.
Be provided with insulating barrier 70 between said first electrode 30 and second electrode 40.This insulating barrier 70 connects the both sides of support 20 and first electrode 30 and second electrode 40 is electrically completely cut off.This insulating barrier 70 is embedded in the otch 414 of otch 314 and second electrode of first electrode 30 to increase the adaptation of first electrode 30, second electrode 40 and support 20.Be appreciated that ground, insulating barrier 70 can be to be made into integration with support 20.
Said light-emitting diode chip for backlight unit 50 is arranged on the electrode part 31 of first electrode 30, and electrically connects the electrode part 31 of first electrode 30, the electrode part 41 of second electrode 40 respectively through lead 51,52.Said encapsulated layer 60 is arranged in the storage tank of support 20, promptly be arranged at electrode part 31, reflecting part 32, second electrode 40 of first electrode 30 electrode part 41, reflecting part 42, and the groove that surrounded of insulating barrier 70 in.This encapsulated layer 60 is covering luminousing diode chip 50 and lead 51,52 in the lump.This encapsulated layer 60 adopts light transmissive material to process, and the inside of this encapsulated layer 60 can also comprise optical wavelength conversion material, to improve the optical characteristics that light-emitting diode chip for backlight unit 50 sends light.Certainly, the upper surface of this encapsulated layer 60 also can apply one deck optical wavelength conversion material (figure does not show), to play the effect that changes optical characteristics.In other embodiments, this light-emitting diode chip for backlight unit 50 can be the flip chip structure setting, and 51,52 in lead can omit.
Because the metallic reflection cup that the reflecting part 32,42 of first electrode 30 and second electrode 40 forms around light-emitting diode chip for backlight unit 50; Avoided brightness decay and the aging situation because of using the plastics reflector to cause in the prior art; Improve light extraction efficiency; And reduced the fabrication schedule of reflector, practiced thrift manufacturing cost.Simultaneously, Embedded Division 33 bendings of first electrode 30, second electrode 40 are embedded in the said support 20, make first electrode 30, second electrode 40 be difficult for coming off from support 20, thereby have strengthened the bonding strength between support 20 and first electrode 30, second electrode 40.In addition, first electrode 30 has increased the area of dissipation to light-emitting diode chip for backlight unit 50, improves the life-span of package structure for LED.
Technology contents of the present invention and technical characterstic disclose as above, yet those skilled in the art still maybe be based on teaching of the present invention and announcements and made all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the content that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by appended claim.
Claims (10)
1. package structure for LED; Comprise support, be arranged on first electrode, second electrode and light-emitting diode chip for backlight unit on the support; It is characterized in that: this first electrode comprises the reflecting part of an electrode part, one connection electrode portion; This second electrode comprises the reflecting part of electrode part, one connection electrode portion; Said light-emitting diode chip for backlight unit electrically connects the electrode part of first electrode, the electrode part of second electrode respectively, and the reflecting part one common peripheral of the reflecting part of said first electrode, second electrode reflects away with the light that light-emitting diode chip for backlight unit is sent around light-emitting diode chip for backlight unit.
2. package structure for LED as claimed in claim 1; It is characterized in that: the reflecting part of said first electrode is from the outward-dipping extension that makes progress of the electrode part of first electrode, and the reflecting part of said second electrode is from the outward-dipping extension that makes progress of the electrode part of second electrode.
3. package structure for LED as claimed in claim 1; It is characterized in that: said first electrode comprises that also one connects the Embedded Division of the reflecting part of this first electrode; Said second electrode comprises that also one connects the Embedded Division of the reflecting part of this second electrode, and the Embedded Division bending of this first electrode, second electrode is provided with and is embedded in the said support.
4. package structure for LED as claimed in claim 3; It is characterized in that: the common arcuate configuration that forms of the emission part of the Embedded Division of said first electrode and first electrode is to hold with support each other, and the common arcuate configuration that forms of the emission part of the Embedded Division of said second electrode and second electrode is to hold with support each other.
5. package structure for LED as claimed in claim 3 is characterized in that: all the be separated by end face certain distance of said support of the Embedded Division of the Embedded Division of said first electrode, second electrode.
6. package structure for LED as claimed in claim 3 is characterized in that: the Embedded Division of the Embedded Division of said first electrode, second electrode all is bending setting.
7. package structure for LED as claimed in claim 1 is characterized in that: be provided with an insulating barrier between said first electrode and second electrode, this insulating barrier is connected with said support.
8. package structure for LED as claimed in claim 7; It is characterized in that: said first electrode is provided with otch near a side bottom of insulating barrier; Second electrode is provided with another otch near a side bottom of insulating barrier, and said insulating barrier embeds the otch of said first electrode, second electrode.
9. package structure for LED as claimed in claim 1 is characterized in that: said light-emitting diode chip for backlight unit is arranged on the electrode part of first electrode.
10. package structure for LED as claimed in claim 9; It is characterized in that: said support comprises a first surface and one and this first surface opposing second surface; The first surface coplane of the bottom surface of the electrode part of said first electrode and this support passes with the bottom surface of the electrode part of heat first electrode that light-emitting diode chip for backlight unit is produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106114807A CN102569595A (en) | 2010-12-29 | 2010-12-29 | Packaging structure of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106114807A CN102569595A (en) | 2010-12-29 | 2010-12-29 | Packaging structure of light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102569595A true CN102569595A (en) | 2012-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010106114807A Pending CN102569595A (en) | 2010-12-29 | 2010-12-29 | Packaging structure of light-emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105960715A (en) * | 2014-02-07 | 2016-09-21 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN106024738A (en) * | 2015-03-30 | 2016-10-12 | 意法半导体公司 | Semiconductor device with sloped sidewall and related method |
| CN109148667A (en) * | 2017-06-27 | 2019-01-04 | 亿光电子工业股份有限公司 | A kind of enclosure support structure and the light emitting device comprising the package support mechanism |
| US10680145B2 (en) | 2017-08-04 | 2020-06-09 | Everlight Electronics Co., Ltd. | LED package structure and method for manufacturing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20090036311A (en) * | 2007-10-09 | 2009-04-14 | 알티전자 주식회사 | Light emitting diode package |
| US20090114937A1 (en) * | 2007-11-05 | 2009-05-07 | Kazuki Kawakubo | Resin-sealed light emitting device and its manufacturing method |
| CN101814569A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Light emitting device package |
| TWM394575U (en) * | 2010-04-15 | 2010-12-11 | I Chiun Precision Ind Co Ltd | Improved structure of light emitting diode supporting stand |
-
2010
- 2010-12-29 CN CN2010106114807A patent/CN102569595A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090036311A (en) * | 2007-10-09 | 2009-04-14 | 알티전자 주식회사 | Light emitting diode package |
| US20090114937A1 (en) * | 2007-11-05 | 2009-05-07 | Kazuki Kawakubo | Resin-sealed light emitting device and its manufacturing method |
| CN101814569A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Light emitting device package |
| TWM394575U (en) * | 2010-04-15 | 2010-12-11 | I Chiun Precision Ind Co Ltd | Improved structure of light emitting diode supporting stand |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105960715A (en) * | 2014-02-07 | 2016-09-21 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN105960715B (en) * | 2014-02-07 | 2018-12-28 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and its production method |
| US10411157B2 (en) | 2014-02-07 | 2019-09-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
| CN106024738A (en) * | 2015-03-30 | 2016-10-12 | 意法半导体公司 | Semiconductor device with sloped sidewall and related method |
| CN109148667A (en) * | 2017-06-27 | 2019-01-04 | 亿光电子工业股份有限公司 | A kind of enclosure support structure and the light emitting device comprising the package support mechanism |
| CN109148667B (en) * | 2017-06-27 | 2020-09-25 | 亿光电子工业股份有限公司 | Packaging support structure and light-emitting device comprising same |
| US10680145B2 (en) | 2017-08-04 | 2020-06-09 | Everlight Electronics Co., Ltd. | LED package structure and method for manufacturing same |
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Application publication date: 20120711 |