CN202977516U - Led display - Google Patents

Led display Download PDF

Info

Publication number
CN202977516U
CN202977516U CN2012202558358U CN201220255835U CN202977516U CN 202977516 U CN202977516 U CN 202977516U CN 2012202558358 U CN2012202558358 U CN 2012202558358U CN 201220255835 U CN201220255835 U CN 201220255835U CN 202977516 U CN202977516 U CN 202977516U
Authority
CN
China
Prior art keywords
light
led
encapsulation
emitting diode
led chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2012202558358U
Other languages
Chinese (zh)
Inventor
陈志强
费翔
钟振宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cree Huizhou Solid State Lighting Co Ltd
Original Assignee
Cree Huizhou Solid State Lighting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Huizhou Solid State Lighting Co Ltd filed Critical Cree Huizhou Solid State Lighting Co Ltd
Priority to CN2012202558358U priority Critical patent/CN202977516U/en
Application granted granted Critical
Publication of CN202977516U publication Critical patent/CN202977516U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Led Device Packages (AREA)

Abstract

The utility model relates to an LED display, including a plurality of LED packages which are arranged with respect to each other to generate messages or images. At least one of the plurality of LED packages includes the components as following: a housing, wherein at least a part of the housing includes a part of the external surface facing at a spectator; an LED chip, which is arranged in the cavity of the housing; filling material arranged in the cavity and positioned over the LED chip, wherein at least a part of the filling material includes a part of the external surface facing at a spectator; and the packaged external surface facing at a spectator, at least a part of which includes a matting surface. According to the LED display provided in the utility model, high contrast among different pixels in an LED billboard and a the display is achieved, simultaneously, the perceived luminous flux or brightness of the display is not reduced, and the reflection of ambient light or backlight is minimized.

Description

Light-emitting diode display
Technical field
The utility model relates to light-emitting diode (LED) display.
Background technology
Light-emitting diode (LED) is the solid state device that converts electrical energy into light, and it comprises the one or more active layers that are clipped in the semi-conducting material between opposite doped layer usually.When the above-mentioned doped layer of leap applied bias voltage, hole and electronics were injected into active layer, and hole and electron recombination are to produce light there.Light is launched from all surface of active layer and LED.
At last decade or more over a long time, scientific and technological progress has made LED have less taking up room (footprint), the emission effciency that improves and the cost of reduction.Than other reflector, LED also has the working life of prolongation.For example, the working life of LED can surpass 50,000 hours, and the working life of incandescent lamp bulb is approximately 2,000 hours.LED is also can be than other light source more sturdy and durable and consume still less energy.Due to these and other reason, the more popular and use in the traditional field of increasing white heat, fluorescence, halogen and other reflector is used at present of LED.
In order to use LED chip in tradition is used, be known that LED chip is packed in encapsulation so that environment and/or mechanical protection, color selection, optically focused etc. to be provided.The LED encapsulation also comprises electrical lead, contact or the trace that is packaged into external circuit for electrical connection LED.In the two pin LED encapsulation/parts 10 of typical case shown in Figure 1, single led chip 12 is arranged on reflector 13 by solder bonds or conductive epoxy resin.The ohmic contact that one or more closing lines (wire bond) 11 connect LED chip 12 is to 15A and/or the 15B of going between, and lead-in wire 15A and/or 15B can be attached to reflector 13 or integrated with reflector 13.Reflector 13 can be sealed material 16 fill and can be included in the LED chip top or be included in encapsulant such as the material for transformation of wave length of phosphor.Phosphor can absorb LED emission the first wavelength light and spontaneously launch the light of second wave length.So whole assembly can be installed in transparency protected resin 14, it can be molded to the light that lens shape is launched from LED chip 12 with guiding or setting.
Traditional LED encapsulation 20 shown in Figure 2 may be more suitable for producing the high power operation of more heats.In LED encapsulation 20, one or more LED chips 22 are installed on carrier, as printed circuit board (PCB) (PCB) carrier, substrate or base station (submount) 23.The solid metal reflector 24 that is arranged on base station 23 leaves encapsulation 20 around LED chip 22 and with the light reflection of LED chip 22 emissions.Reflector 24 also provides mechanical protection for LED chip 22.One or more lines engage and connect between 21 ohmic contact and electric trace 25A, 25B on base station 23 that are produced on LED chip 22.Then, cover with encapsulant 26 LED chip 22 of installing, it can for chip provides environment and mechanical protection, also serve as lens simultaneously.Typically, engage by scolder or epoxy resin, solid metal reflector 24 is attached to carrier.
Different LED encapsulation, those shown in Fig. 1 and 2, no matter large or small, can use as the light source of billboard and display.In many indoor and outdoor occasions, for example in the stadium, horse-racing ground, concert and in large-scale public area, as the Times Square of New York City, the LED-based display of large-screen (often being called huge screen) becomes more general.Some in these displays or screen can be 60 feet high and 60 feet wide large like that.Along with technological progress, the screen that the expectation exploitation is larger.
These screens can comprise thousands of " pixels " or " picture element module ", its each can comprise a plurality of LED.Picture element module can use high efficiency, high-brightness LED, these LED allow displays from relatively remote be visible, even daytime is under the condition of daylight.In some billboards, each pixel can have single led chip, and picture element module can have LED few as 3 or 4 (ruddiness, a green glow and a blue light), and this allows pixel to launch the light of many different colours from the combination of red, green and/or blue light.In the huge screen of maximum, each picture element module can have tens LED.These picture element modules are set to rectangular mesh.In the display of a type, this grid can be 640, and module is wide and 480 modules are high, and the size of screen depends on the actual size of picture element module.
An importance of traditional LED-based display is the contrast between pixel in display, and for good picture quality, the contrast between pixel should be maximized.Often, the contrast between the increase pixel may cause total emissive porwer reduction of reflector in pixel, result, and total emissive porwer of light-emitting diode display reduces.
In order to improve the contrast of light-emitting diode display, developed the LED encapsulation, these encapsulation have the surf zone around LED chip, and it comprises the color that forms contrast with the light from the LED chip emission.Yet these encapsulation only use red-light LED, green light LED and blue-ray LED as their light source.It has been generally acknowledged that, adopt the light of the LED encapsulation emission of this layout can comprise the light of LED chip and the light of transition material (for example white light), and adopt this layout can cause the unacceptable luminance loss of the light launched.What pay close attention to is that contrast surf zone around LED chip can absorb encapsulation light, therefore, and the total brightness that has reduced encapsulation and utilized billboard or the display of these encapsulation.
Traditional LED encapsulation shown in Fig. 1 and Fig. 2 has transparent sealant and covers the transparent reflector of LED chip, so that the light of launching from the LED encapsulation can be effectively utilized.Those skilled in the art are designed to package parts routinely printing opacity and that do not absorb the LED generation or shine any light of described encapsulation from external source.Yet, in the time of in being used in light-emitting diode display, the transparent sealant in traditional LED encapsulation, transparent reflector and on every side contrast material may reflect too much bias light.Can be smoothly and mirror-like during these material cured, cause surround lighting or reflection of light on every side.When watching the display that comprises traditional LED encapsulation, if the too much bias light of display reflects, the consumer is watching aspect shown content just existing problems.For example, if the most of sunlight of display reflects, the consumer can find to be difficult to read shown text under the sun.Therefore, exist for reflecting the still less display of bias light and the demand of LED encapsulation.
The display consumer more favors the high-contrast display with low reflection.In addition, when display was exposed in the light ground illumination, the consumer more favored the display with minimum reflected.Therefore, the new LED device of the bias light reflection of Display Contrast with raising and reduction is provided.
The utility model content
The utility model for be emitter package, more particularly, for LED encapsulation and the light-emitting diode display that utilizes the LED encapsulation.Encapsulate at least one LED chip that adopts in the cavity that is arranged on shell according to LED of the present utility model, so that the surface in the face of the beholder of encapsulation is delustring (matte).The utility model is applied to be arranged in label or display the LED encapsulation with demonstration information or image especially.The utility model is specially adapted to be arranged in billboard (sign) or display to produce the LED encapsulation of message or image.The LED encapsulation provides the good contrast between different pixels in LED billboard and display, does not reduce luminous flux or the brightness of the perception of display simultaneously, and reduces from surround lighting or background reflection of light.
Comprise according to a structure of LED encapsulation of the present disclosure: shell, at least a portion of described shell comprise the part in the face of beholder's outer surface; And be arranged on LED chip in the cavity of shell.Described encapsulation also comprises the packing material that is arranged in cavity and is positioned at the LED chip top, and wherein at least a portion of packing material comprises the part in the face of beholder's outer surface.In addition, described at least a portion of facing beholder's outer surface of described encapsulation has frosting.
Provide a kind of light-emitting diode (LED) display according to another configuration of the present disclosure, comprised a plurality of LED encapsulation, described a plurality of LED encapsulation install to produce message or image toward each other.At least one in described a plurality of LED encapsulation comprises shell, and at least a portion of described shell comprises the part in the face of beholder's outer surface.Described encapsulation also comprises the LED chip in the cavity that is arranged on described shell and is arranged in described cavity and is positioned at the packing material of LED chip top, and at least a portion of wherein said packing material comprises the part in the face of beholder's outer surface.In addition, described at least a portion of facing beholder's outer surface of described encapsulation comprises frosting.
Another configuration of the present disclosure provides the method for the manufacture of light-emitting diode (LED) encapsulation of the external reflection with reduction.A part that provides the shell with the cavity that can hold LED chip, the part on the surface of wherein said shell to comprise the outer surface of facing the beholder is provided the method.Described method also is included in packing material is provided in cavity, and wherein at least a portion on the surface of packing material comprises the part in the face of beholder's surface.In addition, described at least a portion of facing beholder's surface is delustring.
A kind of method of light-emitting diode (LED) encapsulation of the external reflection for the manufacture of having reduction is provided according to the utility model, it is characterized in that, said method comprising the steps of: the shell with the cavity that can hold LED chip is provided, and the part on the surface of wherein said shell comprises the part in the face of beholder's surface; Provide packing material in described cavity, at least a portion on the surface of wherein said packing material comprises the part on the described beholder's of facing surface; And wherein, at least a portion on described surface in the face of the beholder is delustring, and the light that the part that consists of of the shell by described cavity outside on described surface in the face of the beholder has with described emission forms the color that contrasts.
Provide a kind of light-emitting diode (LED) encapsulation according to first aspect of the present utility model, having comprised: shell, at least a portion of described shell comprise the part in the face of beholder's outer surface; LED chip is arranged in the cavity of described shell; Packing material is arranged in described cavity and is positioned at the top of described LED chip, and at least a portion of wherein said packing material comprises the part of described outer surface in the face of the beholder; And described at least a portion of facing beholder's outer surface of described encapsulation comprises frosting.
Particularly, LED encapsulation according to the utility model first aspect, further comprise being arranged for conversion from the transition material of at least some light of described LED chip emission, described encapsulation emission is from the light of described transition material or from the combination of the light of described transition material and described LED chip.
Particularly, the LED encapsulation according to the utility model first aspect further comprises the reflector space around described LED chip that is positioned at described cavity, and described reflector space fundamental reflection is from the light of described LED chip emission.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, described reflector space comprises reflector.
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, the section construction that the shell by described cavity outside of described outer surface in the face of the beholder consists of is in pairs than the zone, and described contrast district has the color that forms contrast with the light of described encapsulation.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, described contrast district is black.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, described contrast district is around described reflector space.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, described contrast district is positioned at the level height place of described LED chip top.
Particularly, the LED encapsulation according to the utility model first aspect further comprises the lead frame that is arranged at least in part described shell, and described LED chip is electrically coupled to described lead frame.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, described cavity forms the reflector around described LED chip.
Particularly, the LED encapsulation according to the utility model first aspect comprises surface mounted device (SMD).
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, described contrast district and described LED chip are arranged so that described LED light launch from described encapsulation, and directly do not launch on described contrast district.
Particularly, according to the LED encapsulation of the utility model first aspect, wherein, at least a portion of the housing parts of the described beholder's of facing outer surface is passed through in the forming process of described shell from the transfer printing of a shaping dies and by delustring.
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, at least a portion of the packing material part of described outer surface in the face of the beholder by etching by delustring.
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, at least a portion of the packing material part of described outer surface in the face of the beholder by punching press by delustring.
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, at least a portion of the packing material part of described outer surface in the face of the beholder by grinding by delustring.
Particularly, according to the LED of the utility model first aspect encapsulation, wherein, at least a portion of described packing material comprises delustering agent, thereby a part that makes described outer surface in the face of the beholder is by delustring.
Provide a kind of light-emitting diode (LED) display according to second aspect of the present utility model, comprise: a plurality of LED encapsulation, described a plurality of LED encapsulation relative to each other is mounted in order to produce message or image, at least one in wherein said a plurality of LED encapsulation comprises: shell, at least a portion of described shell comprise the part in the face of beholder's outer surface; LED chip is arranged in the cavity of described shell; Packing material is arranged in described cavity and is positioned at the top of described LED chip, and at least a portion of wherein said packing material comprises the part of described outer surface in the face of the beholder; And described at least a portion of facing beholder's outer surface of described encapsulation comprises frosting.
Particularly, light-emitting diode display according to the utility model second aspect, wherein, described LED encapsulation further comprises and being arranged to for the transition material of conversion from least some light of described LED chip emission, and described encapsulation emission is from the light of described transition material or from the combination of the light of described transition material and described LED chip.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described LED encapsulation further comprises the reflector space around described LED chip that is positioned at described cavity, and described reflector space fundamental reflection is from the light of described LED chip emission.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described reflector space comprises reflector.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, the light that the part that the shell by described cavity outside of described outer surface in the face of the beholder consists of has with described encapsulation forms the color that contrasts.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described contrast district is black.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described contrast district is around described reflector space.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described contrast district is positioned at the level height place of described LED chip top.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described LED encapsulation further comprises the shell with lead frame, and described LED chip is electrically coupled to described lead frame.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described cavity forms the reflector around described LED chip.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least one LED encapsulation comprises surface mounted device (SMD).
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described contrast district and described LED chip are arranged so that described LED light launches from described encapsulation, and not directly emission on described contrast district.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least a portion of the housing parts of the described beholder's of facing outer surface is passed through in the forming process of described shell from the transfer printing of a shaping dies and by delustring.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least a portion of the packing material of described outer surface in the face of beholder part by etching by delustring.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least a portion of the packing material of described outer surface in the face of beholder part by punching press by delustring.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least a portion of the packing material of described outer surface in the face of beholder part by grinding by delustring.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, at least a portion of described packing material comprises delustering agent, and described delustering agent makes the part of described outer surface in the face of the beholder by delustring.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described light-emitting diode display comprises higher pixel contrast than having the unmatchful same light-emitting diode display that encapsulates than the LED in zone.
Particularly, according to the light-emitting diode display of the utility model second aspect, wherein, described at least one LED encapsulation transmitting white.
A kind of method of light-emitting diode (LED) encapsulation of the external reflection for the manufacture of having reduction is provided according to the third aspect of the present utility model, said method comprising the steps of: the shell with the cavity that can hold LED chip is provided, and the part on the surface of wherein said shell comprises the part in the face of beholder's surface; Provide packing material in described cavity, at least a portion on the surface of wherein said packing material comprises the part on the described beholder's of facing surface; And wherein, described at least a portion of facing beholder's surface is delustring.
Particularly, according to the method for the utility model third aspect, further be included in and have with forming described shell on the mould of grain surface, so that described texture is transferred at least a portion of case surface.
Particularly, according to the method for the utility model third aspect, further comprising the steps: at least a portion on the surface of the part on the surface described packing material of etching, that comprise the described beholder of facing, to form frosting.
Particularly, according to the method for the utility model third aspect, further comprising the steps: at least a portion on the surface of the part on the surface described packing material of punching press, that comprise the described beholder of facing, to form frosting.
Particularly, according to the method for the utility model third aspect, further comprising the steps: at least a portion on the surface of the part on the surface described packing material of grinding, that comprise the described beholder of facing, to form frosting.
Particularly, according to the method for the utility model third aspect, further comprising the steps: at least a portion on the surface of the part on the surface described shell of grinding, that comprise the described beholder of facing, to form frosting.
Particularly, according to the method for the utility model third aspect, wherein, described packing material comprises delustering agent and polymeric material.
Particularly, according to the method for the utility model third aspect, wherein, the part of described delustering agent is retained on the surface of described packing material after solidifying, thereby forms frosting.
Particularly, the method according to the utility model third aspect further comprises: arrange transition material, so that described transition material can be changed from least some light of described LED chip emission; And emission is from the light of described transition material or from the combination of the light of described transition material and described LED chip.
Particularly, according to the method for the utility model third aspect, further comprise providing the reflector space around described LED chip that is positioned at described cavity, described reflector space fundamental reflection is from the light of described LED chip emission.
Particularly, according to the method for the utility model third aspect, wherein, described reflector space comprises reflector.
Particularly, according to the method for the utility model third aspect, wherein, the light that the part that the shell by described cavity outside on described surface in the face of the beholder consists of has with described emission forms the color that contrasts.
Particularly, according to the method for the utility model third aspect, wherein, described contrast district is black.
Particularly, according to the method for the utility model third aspect, wherein, described contrast district is around described reflector space.
Particularly, the method according to the utility model third aspect further comprises: provide lead frame in described shell, and described LED chip is electrically coupled to described lead frame.
Particularly, according to the method for the utility model third aspect, wherein, described LED encapsulation comprises surface mounted device (SMD).
Particularly, according to the method for the utility model third aspect, wherein, described contrast district and described LED chip are arranged so that the light of described LED launches from described encapsulation, and not directly emission on described contrast district.
These and other aspect of the present utility model and advantage will be from becoming apparent the detailed description and the accompanying drawings with the feature of the present utility model of Examples set subsequently.
Description of drawings
Fig. 1 is the end view of traditional LED package;
Fig. 2 is the perspective view of another traditional LED package;
Fig. 3 is the perspective view according to an embodiment of LED encapsulation of the present disclosure;
Fig. 4 is the top view of LED encapsulation shown in Figure 3;
Fig. 5 is that LED encapsulation shown in Figure 4 is along the cutaway view of hatching 5-5;
Fig. 6 is the end view according to an embodiment of light-emitting diode display of the present disclosure;
Fig. 7 is the perspective view according to another LED encapsulation of the present disclosure;
Fig. 8 is the top view of LED encapsulation shown in Figure 7;
Fig. 9 a is the end view that has the shell shaping dies that improves the surface according to of the present disclosure;
Fig. 9 b is formed in the end view of shell of the mould top of Fig. 9 a;
Fig. 9 c is the end view according to the shell of the mould of the Fig. 9 of being formed with a of the present disclosure;
Figure 10 a is the end view of the encapsulation before surface dulling;
Figure 10 b is the end view according to the encapsulation after surface dulling of the present disclosure;
Figure 11 a-Figure 11 c is the end view according to encapsulation of the present disclosure, shows the Sheet Metal Forming Technology for generation of surface dulling;
Figure 12 is the sidepiece artwork in the stage of packing material in solidification process;
Figure 13 a is the end view that has the encapsulation of delustering agent before solidifying in packing material;
Figure 13 b has the end view of the encapsulation of delustering agent in solidifying and form according to packing material after frosting of the present disclosure;
Figure 14 shows the chart of the exemplary optics characteristic effect of using delustering agent according to the disclosure in packing material; And
Figure 15 a-Figure 15 c is the end view according to encapsulation of the present disclosure, shows to produce the milled processed of surface dulling.
Embodiment
The utility model for be LED encapsulation and the light-emitting diode display that adopts the LED encapsulation, wherein the LED encapsulation comprises different layouts to improve in display the emission contrast between the adjacent LED encapsulation and the reflection that light was caused that reduces described package outside.These encapsulation can comprise one or more LED chips and transition material, and LED chip is installed on base station or in package casing.The portion of external surface of base station or shell can comprise the color that forms contrast with the color from the light of LED encapsulation emission.The portion of external surface of base station can also comprise that frosting is to reduce reflection.
The material that directly can comprise in certain embodiments, the light of or reflection LED chip basic identical with the light color of LED chip around the zone of the base station of LED chip or shell.This reflector space can comprise reflector at least in part.The zone of the base station outside this reflector space can comprise the material that forms contrast with LED chip light.In having the embodiment of white luminous LED chip, directly can comprise the material of reflected white-light around the zone of LED chip, and can form contrast with white light around the zone of white light reflection material.In some of these embodiment, the white light reflection material can be white, and the contrast district can be black.Be understandable that, the contrast district can be also many other colors, includes but not limited to blueness, brown, grey, redness, green etc.
This combination of reflecting material and contrast material provides from the contrast of improving between the light of LED chip and the emission of encapsulation on every side.This contrast helps to be provided at the contrast between the LED encapsulation of using in light-emitting diode display, and the contrast between different pixels in display is provided thus.The contrast of this improvement can produce higher-quality image for the beholder.Simultaneously, adopt the LED of white luminous LED chip to encapsulate the beyond thought result that the light quantity that does not absorb irrational LED encapsulation is provided.Before thought, and adopted this layout with white or other light wavelength conversion can cause encapsulating the excessive loss of light.Although some light from LED chip may be absorbed by contrast material, when they used in display, than having the unmatchful display that encapsulates than the LED of material, contrast can cause the beholder unexpectedly to perceive essentially identical light quantity.The light of any absorption of contrast compensation makes the beholder from the essentially identical image brightness of display perception.
LED with reference to emitting LED light encapsulates to describe embodiment hereinafter.This LED light has carried out the wavelength conversion in some configurations.This is usually directed to together with transition material (for example phosphor) LED chip arranged, thereby wherein at least some LED light are converted material through some in transition material LED light and absorb and again launched with different optical wavelength.In some of these embodiment, the LED encapsulation can be launched as the light from the combination of the light of LED and transition material.The light of being changed by wavelength can comprise the light of different colours, and it comprises white light and yellow (blue shifted yellow, the BSY) light of blue shift of different-colour.Usually, BSY light relates to by the blue-light-emitting LED of yellow/green transition material covering, and wherein at least some in blue LED light are converted the material conversion.The emission of resulting LED chip is from the blue light of LED and combination from the Huang/green glow of transition material.
Also can comprise a plurality of LED chips according to encapsulation of the present utility model, each LED chip produces white light wavelength conversion.In other embodiments, the LED encapsulation can utilize a plurality of chips, the light of these chip emission different colours, and these light are arranged to make up to produce white light.Developed from a plurality of discrete light sources and produced white light with the technology of CRI that the improvement under required colour temperature is provided, these technology are used to the different tone from different discrete light sources.Be No.7 in the patent No., described such technology in 213,940 the United States Patent (USP) that is entitled as " Lighting Device and Lighting Method ".In such layout, use yellow conversion material, YAG:Ce phosphor for example, applying peak value is the blue InGaN LED of 452nm, is yellow and have a color of the color dot (color point) on the black body locus that stays in fully on the CIE chart clearly to provide.The blue-light-emitting LED that applies with yellow conversion material often is known as blue shift Huang (BSY) LED or LED chip.BSY emission and light combination from pale red AlInGaP LED, its yellow color with yellow led " is drawn " to blackbody curve to produce gentle white light.
In the embodiment of many LED chips, LED chip can be coupled in encapsulation and make their conductings or shutoff so that the signal of telecommunication can be applied in each LED chip, or makes the light of their emission desirable strengths.In other embodiments, LED chip can be coupling in together so that the single signal of telecommunication is controlled LED chip conducting or shutoff.These embodiment can comprise series coupled LED chip together.
Can use in LED billboard and display according to LED encapsulation of the present utility model, but be understandable that, they can use in many different application.LED encapsulation can be in accordance with different industrial standards, make it be suitable for using in LED-based billboard, channel letter luminous (channel letter lighting) or common backlight and illumination are used.Some embodiment can comprise that also the flat-top emitting surface mates they and light pipe compatibility.For encapsulating according to LED of the present utility model, these are only a little in many different application.
Can comprise according to LED encapsulation embodiment more of the present utility model single led chip or a plurality of LED chip that is installed to base station or shell.These encapsulation also can comprise the reflector around LED chip or a plurality of LED chips.Can comprise with light by the LED chip emission around the upper surface of the reflector of LED chip and form the material that contrasts.The part and/or the reflecting surface in cup that are exposed to the base station in cup can comprise that also reflection is from the material of the light of LED chip.In some of these embodiment, can be white light or other light wavelength conversion from the light of LED chip emission, the reflecting surface of the surface of the base station in reflector and cup can be white or reflected white-light or light wavelength conversion.The contrast upper surface of reflector can be many different colours, but is black in certain embodiments.
Here described the utility model with reference to some embodiment, but be understandable that, the utility model can be specifically embodied as many different forms and should not be construed as the embodiment that is confined to illustrate here.Especially, can provide to surpass above-described those many different LED chips, encapsulation, reflector and lead frame setting, and encapsulant can provide and improves reliability and from the emission characteristics of LED encapsulation with use other a plurality of features of the light-emitting diode display of LED encapsulation.Although the different embodiment of LED discussed below encapsulation for be use in light-emitting diode display, the LED encapsulation also can be used in many different illuminations are used.
Also will be understood that, when element for example layer, zone or substrate be called as another element " on " time, it can be directly can have intervenient element on another element or also.In addition, can use relative term here, for example " top " describes one deck or another regional relation with " following " and similar term.Will be understood that, these terms are intended to comprise the different orientation of device the orientation of describing in figure.
Although first, second grade of term can be used for describing various elements, parts, zone and/or part here, these terms will not limit these elements, parts, zone and/or part.These terms only are used for distinguishing an element, parts, zone or part and another element, parts, zone or part.Therefore, the first element that is discussed below, parts, zone or part can be called the second element, parts, zone or part and not depart from instruction of the present utility model.
Here describe embodiment of the present utility model with reference to sectional view, wherein sectional view shows the illustrative diagram of embodiment of the present utility model.According to this, the actual (real) thickness of parts can be different, and due to for example manufacturing technology and/or tolerance limit, can expect to change illustrated shape.Embodiment of the present utility model will be not interpreted as the given shape that is confined to the shown here zone, but because the reason of for example making comprises departing from shape.Typically, due to the manufacturing tolerance limit of standard, diagram or square or the rectangular area described will have circle or arc feature.Therefore the zone shown in figure is actually schematically, and their shape is not intended to illustrate the accurate shape in the zone of device, and also is not intended to limit scope of the present utility model.
Fig. 3-5 illustrate an embodiment who comprises the emitter package 50 of surface mounted device (SMD) according to of the present utility model.That is, arrange this device so that it can be mounted to structure such as printed circuit board (PCB) (PCB) by adopting surface mounting technology.Be understandable that, the utility model also is applicable to other emitter package type except SMD, and for example pin is installed emitter package.Encapsulation 50 comprises the shell (or base station) 52 of carrying integrated-lead frame 53.Lead frame 53 comprises that for a plurality of conductive connecting elements of conducting electrical signals to the optical transmitting set of encapsulation, these a plurality of conductive connecting elements also are used for helping the heat of dissipation reflector generation.
Lead frame 53 can be arranged in many different modes, and can adopt the parts of varying number in different encapsulation embodiment.Below describe encapsulation 50 for utilizing a reflector, in the illustrated embodiment, lead frame 53 is arranged to and applies the signal of telecommunication to this reflector.Lead frame 54 comprises conductive component 54a-d, and two in conductive component are used for applying the signal of telecommunication to reflector.In an illustrated embodiment, be used for applying the signal of telecommunication to the anode of reflector and can be the second conductive component 54b and negative electrode can be the 4th conductive component 54d, but be understandable that, other embodiment can utilize remaining conductive component of conductive component 54a-d.Can comprise that remaining conductive component 54a and 54c install stability and the extra hot path of dissipation from the heat of reflector is provided to provide.In an illustrated embodiment, the second conductive component 54b has die attach pad 56, and it is used for installing for example reflector of light-emitting diode (LED).
Shell 52 can have many different shape and size, and in an illustrated embodiment, it is square or rectangle normally, has upper and lower surface 58 and 60, the first and second side surfaces 62 and the 64 and first and second end surfaces 66 and 68.The top of shell further comprises recessed or cavity 70, and it extends into the main body of shell 52 until lead frame 53 from upper surface 58.The encapsulation reflector is disposed on lead frame 53 so that launch through cavity 70 from encapsulating 50 from the light of reflector.Cavity 70 consists of reflector around reflector to help that the light of reflector is reflected encapsulation 50.In certain embodiments, can place and fixation reflex insert or ring (not shown) along the side of cavity 70 or the part of wall 74 at least.Can be tapered and will encircle towards the inside of shell and inwardly be carried on the effect of the reflectivity that wherein strengthens ring and the angle of departure of encapsulation by making cavity 70.As an example, the angle of reflection of about 50 degree provides suitable reflectivity and visual angle.The upper surface 58 of shell 52 consists of the part in the face of beholder's surface of described encapsulation, and can be smooth (as shown in Figure 4) or described upper surface can be also coarse or frosting 90(as shown in Fig. 3 and Fig. 5).In other configurations, can use the combination of smooth, polished surperficial and coarse or frosting.The light (such as sunlight, surround lighting or bias light) that rough surface or delustring can help to come from described package outside is from the face of the reflection towards the beholder of beholder's surface.
In certain embodiments, cavity 70 can be filled packing material (or encapsulant) 78 at least in part, and the reflector of lead frame 53 and carrying can be protected and be stablized in position to described packing material (or encapsulant).In some cases, packing material 78 can cover the part that reflector and lead frame 53 exposes by cavity 70.Can Selective filling material 78 to have predetermined optical characteristics in order to strengthen projection from the light of LED, in certain embodiments, for the light by the reflector emission of encapsulation, packing material 78 is transparent basically.Packing material 78 can be also smooth, so as its approx with upper surface 58 in same level, or it can be shaped to lens, for example hemisphere or bullet shaped.Replacedly, packing material can completely or partially be recessed in cavity 760.Packing material 78 can be formed by resin, epoxy resin, thermoplastic condensed polymer, glass, any polymeric material and/or other material or combination of materials that is fit to.In certain embodiments, can add be used to the light that is enhanced to LED and/or from the material of emission, absorption and/or the scattering of the light of LED to packing material 78.Packing material or sealant 78 consist of the part on the surface of facing the beholder of described encapsulation, and can be smooth (as shown in Figure 4), perhaps described packing material or encapsulant can be also coarse or frosting 92(as shown in Fig. 3 and 5).In other configurations, can use the combination of smooth, polished surperficial and coarse or frosting.Rough surface or delustring can help to reduce the light (such as sunlight, surround lighting or bias light) that comes from described package outside from the face of the reflection towards the beholder of beholder's surface.
Shell 52 can be by the material preparation of preferably not only electric insulation but also heat conduction.This material is well known in the art, can include, without being limited to some pottery, resin, epoxy resin, silicones and thermoplastics, condensation polymer (for example polyphthalamide (polyphthalamide, PPA)) and glass.Can be by any the formation and/or assembled package 50 and shell 52 thereof in the various known methods that are well known in the art.For example, can for example form by injection moulding or molded plastic shell 52 around conductive component 54a-d.Replacedly, shell can be formed in a plurality of, and for example top and bottom, be formed with conductive component on the bottom.Then, top and bottom can use known method and material to be bonded together, as passing through epoxy resin, adhesive or other suitable bond material.
Can use many different reflectors according to encapsulation of the present utility model, and encapsulate 50 and utilize LED chip 80.Different embodiment can have the different LED chip of emission different colours light, in an illustrated embodiment, and the encapsulation 50 LED chip transmitting white that comprises or other light wavelength conversions.
LED structure, feature and manufacturing thereof and operation are normally known in the art, and brief discussion only here.LED can have a lot of different semiconductor layers of arranging by different way and can launch different colours.Can make with processes well known the layer of LED, and a kind of suitable manufacturing process is to use Organometallic Chemistry gas deposition (MOCVD).The floor of LED chip generally includes the active layer that is clipped between the first and second opposite doped epitaxial layers/district, and its all these be to be formed on continuously on growth substrates or wafer.The LED chip that is formed on wafer can and be used for different application by singulation, as is arranged in encapsulation.Be appreciated that growth substrates/wafer can be used as final singulation LED a part and keep or growth substrates can be removed whole or in part.
Be further appreciated that to comprise other layer and element in LED, include but not limited to resilient coating, nucleating layer, contact layer and current extending, and light-extraction layer and element.Active area can comprise single quantum well (SQW), Multiple Quantum Well (MQW), double heterojunction or superlattice structure.
Active area and doped layer can be made by the different materials system, and a this system is III nitride base material system.The III group-III nitride refers to those semiconducting compounds that forms between the element (normally aluminium (Al), gallium (Ga) and indium (In)) in the III of nitrogen and periodic table family.This term also relates to ternary and quaternary compound, as aluminum gallium nitride (AlGaN) and aluminium indium gallium nitrogen (AlInGaN).In a possible embodiment, doped layer is that gallium nitride (GaN) and active layer are InGaN.In alternative embodiment, doped layer can be AlGaN, gallium aluminium arsenic (AlGaAs) or Al-Ga-In-As phosphorus (AlGaInAsP) or aluminium indium gallium phosphorus (AlInGaP) or zinc oxide (ZnO).
Growth substrates/wafer can be made by a lot of materials, as silicon, glass, sapphire, carborundum, aluminium nitride (AlN), gallium nitride (GaN), suitable substrate is 4H polytype carborundum, yet also can use other carborundum polytype that comprises 3C, 6H and 15R polytype.Carborundum has some advantage, as comparing Lattice Matching with sapphire more near the III group-III nitride, therefore causes producing to have higher-quality III nitride films.Carborundum also has very high thermal conductivity so that the gross output of the III nitride devices on carborundum can not limited by the heat radiation of substrate (situation that is formed on some devices on sapphire may be like this).The SiC substrate can obtain from the Cree Research, Inc of North Carolina Du Lun, and about the method for making them in scientific literature and United States Patent (USP) No.Re.34, be stated in 861, No.4,946,547 and No.5,200,022.LED can also comprise supplementary features, and as current-dispersing structure and the current extending of conduction, all these can be made by the well known materials of using the known method deposition.
LED chip 80 can be electrically coupled to by the grafting material of conduction and heat conduction the attachment pad 56 on the second conductive component 54b, and the grafting material of described conduction and heat conduction is for example scolder, adhesive, coating, film, encapsulant, paste, grease and/or other suitable material.In a preferred embodiment, can use on the LED bottom solder pads with the LED electric coupling and be fixed on their pads separately so as from the top invisible scolder.Closing line 82 can be included and extend between LED chip 80 and the 4th conductive component 54d.The signal of telecommunication that leap the second and the 4th conductive component applies makes LED chip 80 utilizing emitted lights.
The preparation of conductive component 54a-d can or be completed by the combination of other known method and/or method by punching press, injection moulding, cutting, etching, bending, to realize desirable structure.For example, conductive component 54a-d can be by metal stamping partly (for example by the single sheet of associated materials by the while punching press), and is suitably crooked, and separated fully or separated fully after forming some or all shells.
Conductive component 54a-d can be made by conducting metal or metal alloy, as the corrosion-resistant material of copper, copper alloy and/or other suitable low-resistivity or the combination of material.As indicated, the thermal conductivity of lead-in wire can be assisted the heat conduction to a certain extent away from LED chip 80.
Some or all LED chip described herein can apply with transition material (for example one or more phosphors), and these phosphors absorb at least some LED chip light and launch different wave length so that LED chip is launched the combination (being light wavelength conversion) from the light of LED chip and phosphor.In other embodiments, transition material can be arranged in other zone of encapsulation, includes but not limited to the surface (as reflector) of encapsulant or encapsulation.
according to an embodiment of the present utility model, white luminous LED chip can comprise LED chip, the light of its emission blue wavelength spectrum, and the phosphor absorption portion blue light new emission gold-tinted of laying equal stress on.The white light that LED chip emission blue light is combined with gold-tinted.In other embodiments, U.S. Patent No. 7,213 as mentioned above, described in 940 like that, the non-white light that LED chip emission blue light is combined with gold-tinted.In certain embodiments, phosphor comprise can commercial acquisition YAG:Ce, yet adopt by based on (Gd, Y) 3(Al, Ga) 5O 12: the Ce system is (as Y 3Al 5O 12: the conversion particles that phosphor Ce (YAG)) is made, FR wide yellow spectrum emission is possible.Other yellow phosphor that can be used for white luminous LED chip comprises: Tb 3-xRE xO 12: Ce (TAG); RE=Y, Gd, La, Lu; Or Sr 2-x-yBa xCa ySiO 4: Eu.
Replacedly, in other embodiments, provide the transition material (as phosphor) of the expectation of required emission to apply by use, LED chip is launched the light of other color.For example, the emitting red light LED chip can comprise the LED chip of the phosphor covering that is absorbed LED chip light and red-emitting.LED chip can be launched blue light or UV light, and some phosphors that are suitable for these structures can comprise: Lu 2O 3: Eu 3+(Sr 2-xLa x) (Ce 1-xEu x) O 4Sr 2-xEu xCeO 4SrTiO 3: Pr 3+, Ga 3+CaAlSiN 3: Eu 2+And Sr 2Si 5N 8: Eu 2+
Can adopt many distinct methods to apply LED with phosphor, be No.11/656 in sequence number, 759 and No.11/899, a kind of suitable method has been described in 790 U.S. Patent application, the utility model title of these two patent applications is all " Wafer Level Phosphor Coating Method and Devices Fabricated Utilizing Method ", and both is merged in herein by reference.Replacedly, can use other method to apply LED, as electrophoretic deposition (EPD), the U.S. Patent application No.11/473 that is called " Close Loop Electrophoretic Deposition of Semiconductor Devices " in the utility model name, described a kind of suitable EPD method in 089, it is also incorporated into herein by reference.In addition, as known in the art, LED can have vertical or horizontal geometry.Those that comprise vertical geometry can have the first contact and have second contact on P type layer on substrate.The propagation of electrical signals that is applied to the first contact enters the N-shaped layer, and the signal that is applied to the second contact spreads into the p-type layer.In the situation that the III nitride devices is well known that thin translucent typically cover part or whole p-type layer.Be appreciated that the second contact can comprise such layer, it typically is metal, as platinum (Pt), or transparent conductive oxide, as indium tin oxide (ITO).
LED can also comprise lateral geometry, and wherein two contacts are all at the top of LED.As remove the part of p-type layer and active area by etching, to expose the contact table top on the N-shaped layer.The second horizontal N-shaped contact is provided on the table top of N-shaped layer.These contacts can comprise the well known materials of using known techniques of deposition.
In some configurations, encapsulation 50 can be arranged so that upper surface 58 has and forms the color of contrast by recessed/cavity 70 from the light that encapsulates 50 emissions.In most of embodiment, the light of launching from cavity 70 can comprise the light of being launched by LED chip 80, but in other embodiments, the light of launching by cavity 70 also can comprise the light of being changed by the transition material that is arranged in the encapsulation diverse location.This can be included in the transition material on LED chip 80, the lip-deep transition material that is mixed in the transition material in packing material 78 or exposes in recessed 70.
In some configurations, LED encapsulation 50 is from recessed 70 transmitting whites, and upper surface can comprise the color that forms contrast with white light.Can use many different colors, such as blueness, brown, grey, redness, green, purple etc. in shown embodiment, is black on its upper surface 58.Can adopt many different known methods to apply black pigment.Can adopt diverse ways, such as silk screen printing, ink jet printing, smear etc., the step after a while in the moulding process of shell 52 or in package fabrication process is carried out above-mentioned applying.
For the contrast color from upper surface 58 further contrasts recessed or cavity, the surface in recessed also can have color or apply with material, and described material fully reflects from the light of LED and/or the emission of transition material on every side.In certain embodiments, other surface by recessed visible surperficial sidewall 74 and shell can comprise that abundant reflection is from the material of the light of LED chip 80.Surface by the recessed 70 conductive component 54a-d that expose and the space between conductive component 54a-d can be further with the reflector (not shown) coated with improving by the light that reflects from LED chip 80 reflection of light of being launched by LED chip 80, otherwise can be absorbed by these package parts from the light of LED chip 80.Preferably, the reflector comprises silver, but is understandable that, other reflecting material, and for example aluminium, also may be provided in various thickness.The reflector can completely or partially cover the part that is not occupied by LED chip 80 or closing line 82 of conductive component, but be understandable that, as general fact, the zone that the reflector covers is more, the reflective surface area that obtains is larger, and this can improve total encapsulation reflectivity.
Cavity 70 can have many different shapes, routine as directed circle or ellipse, square, rectangle or other polygonal shape.The contrast district of upper surface 58 can have many different shapes and can cover whole or be less than whole upper surfaces.In one embodiment, upper surface 58 can be covered by contrast material, and its shape is limited by the shape of upper surface 58.
As discussed above, the darker contrastive colours of upper surface 58 can cause absorbing this light when certain light when penetrating from LED chip 80 emission and from encapsulating recessed 70.In order to help to minimize the amount of absorbed LED light, can arrange that upper surface 58 makes it on LED chip, thereby seldom or do not have LED light directly to launch on upper surface.That is, LED chip 80 is disposed in the substrate of cavity 70, and upper surface 58 is at the top of reflector, and it is on LED chip 80.As a result, launch cavity 70 from the light of LED chip 80 and directly do not launch on upper surface 58.This combination of contrast material provides contrast advantage above-mentioned, and unexpected effect is because therefore the light of reflector seldom or not can be perceived the reduction of LED encapsulation (or light-emitting diode display brightness) by darker Surface absorption.
As mentioned above, can be used for many different application according to LED encapsulation embodiment of the present utility model, but be specially adapted to use so that the peak emission pattern of inclination to be provided in light-emitting diode display.Fig. 6 illustrates the embodiment according to light-emitting diode display 100 of the present utility model, its can utilize a plurality of according to LED of the present utility model encapsulation 102 to improve pixel contrast, different light-emitting diode display embodiment can have the LED encapsulation that whole or some contrasts are improved.Can have pixel more than 300,000 according to different light-emitting diode display of the present utility model, and other embodiment can have 200,000 to 300,000 pixel.Other embodiment can have the pixel between 100,000 and 200,000.
Be understandable that, the different embodiment that encapsulate according to LED of the present utility model can arrange and can have many different parts in many different modes.Different embodiment can have a plurality of reflectors or LED chip, and Fig. 7 and 8 illustrates another embodiment according to LED encapsulation 200 of the present utility model, and it also is arranged as SMD, but has 3 LED chips.Embodiment above similar, encapsulation 200 comprises the shell 202 of the lead frame 204 that carrying is integrated.Lead frame 204 comprises a plurality of conductive connecting elements, and it is used for conducting electrical signals to the optical transmitting set of encapsulation, and also assists the heat that dissipates and produced by reflector.
Arrange lead frame so that each reflector is driven by separately the signal of telecommunication.Therefore, 6 conductive components are arranged in shown embodiment, it comprises for the conductive component of each reflector pair, applies the signal of telecommunication by its each reflector of conductive component subtend.For encapsulation 200, conductive component comprises first, second, and third anode component 206,208,210, and first, second, and third cathode assembly 212,214,216 that all has the reflector attachment pad.Conductive component and attachment pad can be by preparing with above-mentioned those identical materials.
Be similar to above-mentionedly, shell 202 is generally square or rectangle, has upper and lower surface 218 and 220, the first and second side surfaces 222 and the 224 and first and second end surfaces 226 and 228.The top of shell further comprises recessed or cavity 230, and it extends into the main body of shell 202 until lead frame 204 from upper surface 218.Reflector is disposed on lead frame 204 so that launch through cavity 230 from encapsulating 200 from the light of reflector.In certain embodiments, can place and fixation reflex insert or ring (not shown) along the side of cavity 230 or the part of wall 234 at least.As above, in some configurations, the surface in the face of the beholder of described encapsulation (upper surface 218 and packing material, encapsulant or optical frames (optic) by shell 202 consist of) can be partly or entirely smooth, coarse or both combinations.In Fig. 7, the upper surface 218 of shell 202 is depicted as coarse surface 290.
The same with encapsulation 50, in certain embodiments, cavity 230 can be filled at least in part material (or encapsulant) 238 and fill, and the reflector of lead frame 204 and carrying can be protected and be stablized in position to described packing material (or encapsulant).Packing material 238 and shell 202 can be made by the same procedure and the material that are used for encapsulation 50 mentioned with preamble.
In the illustrative embodiment of describing, encapsulation 200 utilizes first, second, and third LED chip 240,242,244, its each can launch and other the light of same color or the light of different colours.In an illustrated embodiment, LED chip 240,242,244 can send respectively blueness, green and red, and therefore these LED combination results are FR color substantially when suitably being powered up.Further, when suitably being powered up, the white light combination of LED240,242,244 emission different-colours.
Cathode assembly 212,214,216 comprises for carrying and is the LED chip 240,242 of linear array, 244 central surface or mounting mat, this array extends on perpendicular to the direction 246 of side surface 222 and 224, usually, LED240,242,244 central axial alignment along shell 202.Than the encapsulation of the LED that has otherwise (as in a cluster) layout, this aligning can provide the color uniformity of the improvement under different visual angles.
In an illustrated embodiment, encapsulation 200 is arranged such that also upper surface 218 has and forms the color of contrast from encapsulating 200 colors through the light of cavitys 230 emission.As previously discussed, this can comprise from LED chip 240,242,244 light and/or from the light that is arranged in one or more transition materials in recessed.In an illustrated embodiment, LED encapsulation 200 can comprise that emission LED chip 240,242,244 maybe can launch the white light combination from its LED chip 240,242,244 light.Upper surface 218 can comprise the color that forms contrast with white light.Can use many different colors, such as blueness, brown, grey, redness, green, purple etc., shown in execute example, be black on its upper surface 218.A kind of black pigment that applies in the method that can describe with preamble.
For the contrast color from upper surface 218 further contrasts recessed or cavity, the surface in recessed 230 also can have color or apply with material, and its reflection is from the light of LED and/or the emission of transition material on every side, as previously discussed.In addition, also can all apply with the reflector (not shown) by recessed 230 other surfaces that expose, and the space between conductive component also can be all with the coating of reflector (not shown), as previously discussed.The darker contrastive colours of upper surface 218 can cause absorbing this light when certain light when penetrating from LED chip 240,242,244 emissions and from encapsulating recessed 230.Be similar to above, in order to help to minimize the amount of absorbed LED light, can arrange that upper surface 218 makes it on LED chip, thus seldom or do not have LED light directly to impinge upon on upper surface.This layout provides previously discussed advantage, comprises that the pixel contrast of improvement does not reduce luminous flux or the brightness of the perception of the light-emitting diode display that utilizes these encapsulation simultaneously basically.
With reference to first, second, and third anode and cathode assembly, top embodiment has been described, first, second, and third anode and cathode assembly are that the corresponding signal of telecommunication is applied to each LED chip and makes allowances, be understandable that, a plurality of LED chips can be coupling in together with many alternate manners.LED chip can be coupling in together with many different series and parallel connections interconnection compound modes.In certain embodiments, LED chip can be used for applying the signal of telecommunication to single anode of LED chip together with single loop between single negative electrode is coupling in.
As above, advantageously reduce the reflection of light from described package outside.This can realize in the following way, to the encapsulation upper surface or in the face of carrying out roughening, delustring or repair in other cases in beholder's surface (such as shell and packing material).In a configuration, surface or the upper surface in the face of the beholder of shell are roughened.As shown in Fig. 9 a-Fig. 9 c, can use injection-molded to form described shell.In these configurations, case surface has the shape identical with die surface or polishing as die surface.Therefore, in one embodiment, use the mould of the die surface with finishing.The die surface of finishing is delustring or coarse, so that the coarse patterns in forming process on die surface is transferred to case surface.Fig. 9 a shows the finishing mould 92 with rough surface 94.The rough surface 94 of mould 92 can form by any suitable technique, described technique such as little spot corrosion (micro-pitting) of being undertaken by discharge, grinding, reconditioning (lapping, correct grinding), cutting, punching press or any other available technique.
After having formed the mould 92 with rough surface, form shell 96 by injecting in the mould as conventional enclosure is shaped.As shown in Fig. 9 b, in forming process, along with injection process housing material flows into mould, the rough surface 94 of mould 92 contacts with shell.This zone of shell 96 is as the upper surface of the encapsulation that manufactures.Pattern in the shell forming process on the rough surface 94 of mould 92 is transferred to shell 96.As shown in Fig. 9 c, this technique forms the shell 96 with rough surface 94.In other configurations, mould itself can not comprise refacing, and mask can be placed between mould and sheathing material to be provided for being transferred to the coarse patterns of sheathing material in forming process.In other configuration, can utilize etching, grinding, cutting, punching press or any other available technique that sheathing material is repaired after being shaped.
Use traditional smooth mould case surface that forms and the case surface that the rough surface that uses finishing forms there are differences.Use the case surface of the coarse mould formation of finishing to have coarse texture.
In another configuration, the outer surface of packing material can be roughened.In one embodiment, as shown in Figure 10 a and Figure 10 b, can realize by chemical technology (such as using etchant) surface dulling of packing material or sealant.Although isotropic etching and anisotropic etching can be used, preferably use anisotropic etch process, so that the surface reaction on the regional on surface is different, thereby produce the surface 116 of delustring.After having cured, packing material 114 can use etchant.Can use any etchant (such as wet etching) of the rate of etch that can provide different on the whole surface of packing material 114.Figure 10 a shows the conventional package with shell 112, and described shell comprises the cavity 118 that is filled with packing material, encapsulant or optical frames 114, so that the outer surface of packing material 114 is smooth.Figure 10 b shows the encapsulation with shell 112, and described shell comprises the cavity 118 that is filled with packing material, encapsulant or optical frames 114, is delustring or coarse surface 116 with the outer surface that makes packing material 114 by etch process.
In one embodiment, as shown in Figure 11 a-Figure 11 c, can realize by physical technology (such as Sheet Metal Forming Technology) surface dulling of packing material or sealant 124, wherein veined or place and by being pressed on packing material 124 with the mask 129 of microtexture.Can use mask in solidification process.As shown in Figure 11 a, encapsulation has shell 122.Shell 122 comprises the cavity 128 that is filled with packing material or encapsulant 124.Next, in Figure 11 b, the surface is veined or be placed on packing material 124 tops with the mask 129 of microtexture.In certain embodiments, at first process described mask 129 with release agent, so that can easily mask 129 be removed from packing material 124 after Sheet Metal Forming Technology is completed.Mask 129 can or can be used in any other suitable material that texture is impressed on packing material 24 by veined film, metal, glass, plastics and make.After being placed on mask 129 on packing material 124, press described grinding in position in and packing material is solidified so that texture 126 is transferred to the upper surface of packing material 124.Then, as shown in Figure 11 c, remove mask 129 by means of release agent, and remain with on the upper surface of packing material 124 from mask 129 and be transferred to texture 126 on it.
In another embodiment, as shown in Figure 12-Figure 13 b, can use delustering agent and packing material 144,132 to come together to realize the surface dulling of packing material or sealant 144.In the configuration of using delustering agent with the surface that produces coarse or delustring, delustering agent 134,149 is arranged in packing material 132,144 or together with packing material 132,144.Figure 12 shows the three phases of setting and curing filler material.In the phase I 131, show packing material 132 and be in wet or uncured form, and delustering agent 134 substantially evenly or optionally is arranged in described packing material.Preferably, delustering agent 134 is arranged in packing material 132 equably, yet in other configurations, delustering agent 134 also can be with other CONCENTRATION DISTRIBUTION.In the ensuing stage 133, show packing material 132 and have a small amount of contraction, this is because due in solidification process, the solvent in packing material evaporates.As directed, in this phase process, because film shrinks, the particle of delustering agent 134 more is close to the surface.In the last stage 135, show in the form that packing material 132 is in drying or curing.As can be seen from FIG., in this stage, due to the further contraction in dry run, the part particle of delustering agent 134 forces the surface of packing material 132 to arrange in non-homogeneous mode, thereby the surface 136 of coarse, veined or delustring is provided.
The delustering agent that uses should have suitable mass density and sinks in packing material or precipitate to prevent duller particle.Any material that has suitable mass density relation with packing material all can be used as delustering agent.Delustering agent also must have suitable surface treatment (such as inorganic processing) and suitable designated surface area with the packing material system matches.Silica (silica, silicon dioxide) particle is as delustering agent in some configurations, and granular size is 4-10 μ m, and surface area is 2-200(m 2/ g).Yet, in other configurations, also can use other delustering agents with the suitable specification of quality and density specification, such as other polycrystalline particles and organic material.Delustering agent can have any shape, yet erose particle is preferred for extinction effect.Exemplary delustering agent is the material that can be applied in japanning (paint coat), resin or other polymer, in order to help surface roughening in the chemical substance exsiccation or after solidifying.Some delustering agents can comprise silica (surface is processed or unprocessed); Wax product, such as those based on polytetrafluoroethylene (PTFE), polyethylene, polypropylene, brazil wax (Carnauba) and Amid(acid amides) wax product; And can be dispersed in packing material and show other inorganic or organic granulars of good antisolvent precipitation characteristic in packing material.Preferred delustering agent can not affect light output, and produces and have the surface of small texture, and can not sink in packing material or precipitate, and swims in some cases on the top of packing material.
In addition, in some configurations, the use of delustering agent (such as silica) can not cause significant light output to worsen.Figure 14 shows for reference packing material and impact or the deterioration of light output that be combined with two kinds of different packing materials of two kinds of delustering agents.As directed, maximum deterioration is 4%, and output has even improved 3% in some instances.Preferably, delustering agent should not absorb light.Therefore, these delustering agents in packing material can reverberation, and this should help even to make light export and seems more even after these " arbitrarily " reflection.
Figure 13 a and Figure 13 b show the end view of the encapsulation that comprises shell 142.Shell 142 has the molding cavity 148 that keeps packing material 144.Figure 12 is described as reference, and packing material 144 comprises the delustering agent 149 that is arranged on substantially equably in whole packing materials 144.The packing material 144 that has smooth surface before Figure 13 a shows and solidifies.Figure 13 b shows the curing result of packing material 144, wherein is provided with duller particle 149 in packing material 144.As shown above with described, the curing with packing material 144 of delustering agent 149 causes the contraction of packing material 144 and exposes the part particle of delustering agent 149, thereby has produced delustring, coarse or veined surperficial 146.In certain embodiments, similarly curing process can be used for packing material, and keeps described packing material to have or do not have duller particle.
As shown in Figure 15 a-Figure 15 c, in another embodiment of the surface dulling that can realize by physical technology packing material or sealant 174 and/or shell 172, use and grind or thinning technique, wherein use veined, little 179 pairs of shells 172 of abrasive sheet with texture, little spot corrosion and/or packing material grinds or reconditioning, simultaneously pressure is applied to described encapsulation or abrasive sheet 179 with these parts compressings together.As shown in Figure 15 a, an encapsulation has shell 172.Shell 172 comprises the cavity 178 that is filled with packing material or encapsulant 174.Then, in Figure 15 b, veined or the little abrasive sheet 179 with texture in surface is placed at least a portion top of described encapsulation so that this abrasive sheet can be used for grinding or reconditioning shell 172 or packing material 174, perhaps grind or reconditioning shell and packing material the two.Abrasive sheet 179 can be with metal, sand paper, be attached with any other substrate of abrasive material or compare with shell 172 and packing material 174 and demonstrate more any other suitable material of high rigidity and make.The abrasive sheet substrate can comprise paper, cloth, rubber etc.The abrasive sheet abrasive material that is attached to substrate can comprise carborundum, aluminium oxide, silica, diamond etc.Then, as shown in Figure 15 c, after grinding, packing material 174 and shell 172 are shown as the upper surface 176 that has with texture.In other embodiment, also can form with other techniques groove, spot corrosion or other textures on the surface of shell or packing material.In other configurations, antireflecting coating can be added on these surfaces.
Be understandable that, can arrange with the many different modes the embodiment that mentions except preamble the different embodiment of emitter package.Encapsulation can have that many different surfaces are installed or the mounting arrangements of other type and can comprise the reflector with difformity and size.Other embodiment can be arranged as does not have reflector, an a kind of LED chip or a plurality of LED chip that is mounted to base station that comprise of these embodiment.Light reflection and contrast material can be around LED on base station, and in certain embodiments, the encapsulant of form of lens can be molded on LED chip.Will also be appreciated that any in roughening, veining or surface dulling technology all can only be used on the part upper surface or on whole upper surface.In addition, these technology can be used or be used in except upper surface or in the face of on the surface beholder's surface, such as side surface, rear surface or inner surface for other purposes.In addition, the combination in any of these technology can be used together or use separately.
Although describe the utility model in detail with reference to its some preferred structure, other pattern is also possible.Therefore, spirit and scope of the present utility model should not be limited to above-described pattern.

Claims (19)

1. a light-emitting diode display, is characterized in that, comprising:
A plurality of LED encapsulation, described a plurality of LED encapsulation relative to each other are mounted in order to produce message or image, and at least one in wherein said a plurality of LED encapsulation comprises:
Shell, at least a portion of described shell comprise the part in the face of beholder's outer surface;
LED chip, described LED chip are arranged in the cavity of described shell;
Packing material, described packing material are arranged in described cavity and are positioned at the top of described LED chip, and at least a portion of wherein said packing material comprises the part of the described beholder's of facing outer surface; And
Described at least a portion of facing beholder's outer surface of described encapsulation comprises frosting.
2. light-emitting diode display according to claim 1, it is characterized in that, described LED encapsulation further comprises and is arranged to conversion from the transition material of at least some light of described LED chip emission, and described encapsulation emission is from the light of described transition material or from the combination of the light of described transition material and described LED chip.
3. light-emitting diode display according to claim 1, is characterized in that, described LED encapsulation further comprises the reflector space around described LED chip that is positioned at described cavity, and described reflector space reflection is from the light of described LED chip emission.
4. light-emitting diode display according to claim 3, is characterized in that, described reflector space comprises reflector.
5. light-emitting diode display according to claim 1, is characterized in that, the section construction that the shell by described cavity outside of described outer surface in the face of the beholder consists of is in pairs than the zone, and described contrast district has the color that forms contrast with the light of described encapsulation.
6. light-emitting diode display according to claim 5, is characterized in that, described contrast district is black.
7. light-emitting diode display according to claim 5, is characterized in that, described contrast district is around described reflector space.
8. light-emitting diode display according to claim 5, is characterized in that, described contrast district is positioned at the level height place of described LED chip top.
9. light-emitting diode display according to claim 1, is characterized in that, described LED encapsulation further comprises the shell with lead frame, and described LED chip is electrically coupled to described lead frame.
10. light-emitting diode display according to claim 1, is characterized in that, described cavity forms the reflector around described LED chip.
11. light-emitting diode display according to claim 1 is characterized in that, at least one LED encapsulation comprises surface mounted device (SMD).
12. light-emitting diode display according to claim 5 is characterized in that, described contrast district and described LED chip are arranged so that the light of described LED launches from described encapsulation, and directly launch on described contrast district.
13. light-emitting diode display according to claim 1 is characterized in that, at least a portion of the housing parts of the described beholder's of facing outer surface is passed through in the forming process of described shell from the transfer printing of a shaping dies and by delustring.
14. light-emitting diode display according to claim 1 is characterized in that, at least a portion of the packing material part of described outer surface in the face of the beholder by etching by delustring.
15. light-emitting diode display according to claim 1 is characterized in that, at least a portion of the packing material part of described outer surface in the face of the beholder by punching press by delustring.
16. light-emitting diode display according to claim 1 is characterized in that, at least a portion of the packing material part of described outer surface in the face of the beholder by grinding by delustring.
17. light-emitting diode display according to claim 1 is characterized in that, at least a portion of described packing material comprises the delustering agent with a part of delustring of the described beholder's of facing outer surface.
18. light-emitting diode display according to claim 1 is characterized in that, described light-emitting diode display comprises higher pixel contrast than having the unmatchful same light-emitting diode display that encapsulates than the LED in zone.
19. light-emitting diode display according to claim 1 is characterized in that, at least one LED encapsulation transmitting white.
CN2012202558358U 2012-05-31 2012-05-31 Led display Expired - Lifetime CN202977516U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012202558358U CN202977516U (en) 2012-05-31 2012-05-31 Led display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012202558358U CN202977516U (en) 2012-05-31 2012-05-31 Led display

Publications (1)

Publication Number Publication Date
CN202977516U true CN202977516U (en) 2013-06-05

Family

ID=48518556

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012202558358U Expired - Lifetime CN202977516U (en) 2012-05-31 2012-05-31 Led display

Country Status (1)

Country Link
CN (1) CN202977516U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456726A (en) * 2012-05-31 2013-12-18 惠州科锐半导体照明有限公司 LED package, LED displayer and LED package manufacturing method
WO2019006763A1 (en) * 2017-07-07 2019-01-10 Cree Hong Kong Limited Rgb led package with bsy emitter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456726A (en) * 2012-05-31 2013-12-18 惠州科锐半导体照明有限公司 LED package, LED displayer and LED package manufacturing method
WO2019006763A1 (en) * 2017-07-07 2019-01-10 Cree Hong Kong Limited Rgb led package with bsy emitter
US11545471B2 (en) 2017-07-07 2023-01-03 Creeled, Inc. RGB LED package with BSY emitter

Similar Documents

Publication Publication Date Title
US10679973B2 (en) Multiple pixel surface mount device package
TWI523273B (en) Led package with contrasting face
CN102217105B (en) Semiconductor lighting device
CN101385152B (en) Light emitting device and manufacturing method thereof
US20160131327A1 (en) Light source module and lighting device having the same
CN103782402A (en) Light emitter device packages, components, and methods for improved chemical resistance and related methods
CN104253205A (en) Semiconductor light emitting device and method for manufacturing light source module
CN107665940A (en) Light-emitting device and its manufacture method
CN105591012A (en) Method of manufacturing light-emitting apparatus, and light-emitting module inspecting apparatus
US20160284927A1 (en) Method of manufacturing semiconductor device package such as light-emitting diode package
CN103456726A (en) LED package, LED displayer and LED package manufacturing method
CN102820404A (en) Light-emitting diode package
CN110383510B (en) Substrate for light emitting diode and related method
CN102074643A (en) Light emitting device and light emitting device package
CN109390449A (en) Light emitting device package
CN104848057A (en) Method of manufacturing light source module
CN113875026A (en) Arrangement for light emitting diode packages
CN202977516U (en) Led display
CN203179879U (en) Led encapsulation
CN106469775A (en) Structure of light emitting diode
CN102169947B (en) Wide angle oval light emitting diode package
KR102409961B1 (en) Optical device and light emitting device package having the same
CN202120981U (en) Led display
CN202111155U (en) LED packaging
CN104037298A (en) Method and device for packaging LED coated with phosphor

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20130605

CX01 Expiry of patent term