KR101171855B1 - Supporting substrates for semiconductor light emitting device and high-performance vertical structured semiconductor light emitting devices using supporting substrates - Google Patents

Abstract

The present invention relates to a support substrate prepared for high-brightness light emitting devices using a group 3-5 compound semiconductor having a vertical structure, and a method of manufacturing a high brightness light emitting device using the support substrate. The prepared supporting substrate (PSS) includes a sacrificial layer, a heat sink layer, and a bonding layer, which are sequentially stacked on the selected support substrate (SSS), and the SSS is formed of an electrical conductor or an electrical insulator. The sacrificial layer is made of a material dissolved in a wet solution. The method of manufacturing a high brightness light emitting device using the PSS may include preparing a first wafer on which a semiconductor multilayer light emitting structure is grown on an initial growth substrate, preparing a PSS, and wafer bonding the first wafer and the PSS. And separating and removing the first growth substrate of the first wafer from the bonded result, proceeding to subsequent processes such as forming an ohmic contact electrode and heat treatment on the resultant, and cutting into a single chip.

According to the present invention, a group III-nitride-based semiconductor light emitting device having a vertical structure having improved overall performance by reducing damage of a semiconductor single crystal multilayer structure separated from an initial growth substrate by using a PSS having an electrical conductor or an electrical insulator SSS. Can be provided.

40, 50, 780, 980, 1180: PSS, 400, 500, 782, 982, 1182: SSS, 410, 510, 784, 984, 1184: Sacrificial layer, 420, 422, 520, 522, 786, 986, 1186 : Heat sink layer, 430, 530, 788, 988, 1188: PSS bonding layer, 60, 80, 10: Semiconductor light emitting device, 600, 800, 1000: First growth substrate, 680, 880, 1080: First ohmic contact Electrode, 610, 810, 1010: buffer layer, 620, 820, 1020: n-type semiconductor cladding layer, 630, 830, 1030: light emitting active layer, 640, 840, 1040: p-type semiconductor cladding layer, 650, 850, 1050: first 2 ohmic contact electrode, 660, 860, 1060: first bonding layer, 910, 1110: temporary support substrate (TSS)

Description

Supporting substrates for semiconductor light emitting device and high-performance vertical structured semiconductor light emitting devices using supporting substrates}

The present invention is a "prepared supporting substrate (hereinafter referred to as" PSS ") used in the manufacture of a high-performance vertical light emitting device using a multi-layer light-emitting structure thin film composed of a group 3-5 nitride-based semiconductor and the The present invention relates to a light emitting device having a high performance vertical structure manufactured using PSS and a method of manufacturing the same.

More specifically, in the Group 3-5 nitride-based semiconductor light emitting device having an vertical ohmic contact electrode structure in the vertical direction, the first growth substrate used for growing the Group 3-5 nitride-based semiconductor ( That is, the multilayer light emitting thin film from Al2O3, SiC, Si, GaAs, GaP is subjected to laser lift-off, chemo-mechanical polishing, or wet-etching process. Prior to lift-off, the semiconductor is separated from the sapphire, which is a growth substrate by using a wafer bonded process and a support substrate (PSS) prepared for use as a support substrate (PSS) by bonding to the resultant. The present invention relates to a semiconductor light emitting device having a high performance vertical structure and minimizing damage of a single crystal multilayer light emitting structure thin film, and as a result, to improve overall performance.

In general, semiconductor light emitting devices include a light-emitting diode (LED) and a laser diode (LD) that generate light when a forward current flows. In particular, the LED and the LD have a p-n junction in common, and when a current is applied to the light emitting elements, the current is converted into a photon so that light is emitted from the device. Light emitted from LEDs and LDs varies from long-wavelength light to short-wavelength light range depending on the type of semiconductor material. Above all, visible light using LEDs made of semiconductors with wide band-gap semiconductors. It is possible to realize red, green, and blue areas, which are widely applied to display parts of various electronic devices, traffic signals, and various display light source devices. Recently, due to the development of white light sources, it is widely used in next-generation general lighting light source devices. It is sure to be possible.

In general, group III-nitride-based semiconductors are the first growth substrates of sapphire, silicon carbide (SiC), which have significantly different lattice constants and thermal expansion coefficients in order to obtain high quality semiconductor thin films. It is growing hetero-epitaxially on top of silicon (Si). However, Sapphire's first growth substrate has the disadvantage of not being able to apply a large current to the LED due to poor thermal conductivity, and since Sapphire's first growth substrate is an electrical insulator, it is difficult to cope with static electricity flowing from the outside. There is a big problem that is likely to cause failure. These problems not only lower the reliability of the device but also cause a lot of process constraints in the packaging process.

In addition, the first growth substrate of sapphire, which is an electrical insulator, has a multi-layered n-type ohmic contact electrode (hereinafter referred to as 'first ohmic contact electrode') and a p-type ohmic contact electrode (hereinafter referred to as 'second ohmic contact electrode'). In addition to having a mesa structure that is formed in the same direction as the growth direction of the light emitting structure, the LED chip area must also be larger than a certain size, so there is a limit to reducing the LED chip area. It is an obstacle to the improvement of the LED chip output which is a light emitting element.

As described above, in addition to the shortcomings of the mesa structure LED fabricated on the sapphire, which is the first growth substrate, it is difficult to dissipate a large amount of heat inevitably generated when driving the light emitting device to the outside due to the poor thermal conductivity of the sapphire growth substrate. have. For this reason, there is a limit to the application of a mesa structure in which sapphire is attached to a light emitting device used in a large area and a large capacity (that is, a large current), such as a large display and a general light source. That is, when a large current is injected into the light emitting device for a long time, the internal temperature of the light emitting active layer is gradually increased due to a large amount of heat generated, thereby causing a problem that the LED luminous efficiency gradually decreases.

Unlike sapphire, silicon carbide (SiC) growth substrates have excellent thermal and electrical conductivity, and at the same time, lattice constant and thermal expansion coefficient (TEC), which are important variables in growing high-quality semiconductor single crystal thin films, Similar to the Group 3-5 nitride-based semiconductors, a good multilayer light emitting structure thin film has been successfully stacked / grown, and various types of vertical light emitting devices have been manufactured. However, since it is not easy to manufacture a good quality SiC growth substrate, it is considerably higher cost than other single crystal growth substrates, and as a result, there are many limitations in applying to mass production.

However, in view of current technology, economy, and performance, it is most desirable to manufacture a high-performance light emitting device using a multilayer light emitting structure laminated / grown on a sapphire growth substrate. As described above, in order to solve the LED problems of the mesa structure fabricated using a thin film, which is a group III-nitride-based semiconductor multilayer light emitting structure stacked / grown on the sapphire, which is the first growth substrate, the first growth of sapphire recently. After growing a high quality multilayer light emitting structure thin film on the substrate, the group 3-5 nitride-based semiconductor multilayer light emitting structure thin film is lifted off safely from sapphire, and a high performance vertical light emitting diode using the same Many efforts have been made to fabricate vertical structured LEDs.

1 is a cross-sectional view illustrating a process of separating the first growth substrate sapphire using a laser lift off (LLO) technique according to the prior art. As shown in FIG. 1, when the laser beam, which is a strong energy source, is irradiated to the backside of the first growth substrate 100 formed of transparent sapphire using LLO technology, the laser at the interface is exposed. The beam absorption is strongly generated, which causes instantaneous temperature of 900 ° C. or higher to cause thermal chemical decomposition of GaN at the interface, and the first growth substrate 100 made of sapphire and the nitride semiconductor thin film 120 Laser lift-off (LLO). However, as mentioned in many prior documents, the group III-nitride-based semiconductor multilayer light emitting structure thin film is a group III-nitride-based semiconductor thin film due to different lattice constants and coefficients of thermal expansion when subjected to a laser lift off (LLO) process. It can not withstand the mechanical stress generated between the sapphire and the first thick growth substrate, and after the separation from the sapphire it can be seen that a lot of damage and breaking occurs in the semiconductor single crystal thin film. As described above, when the group 3-5 nitride-based semiconductor multilayer light emitting structure thin film is damaged and broken, not only does a large leakage current occur, but also the chip yield of many light emitting devices, including LEDs, is greatly reduced. This will cause the overall performance degradation of the LED chip as a device. Therefore, a high-performance vertical LED manufacturing process has been steadily studied using a sapphire growth substrate separation process and a semiconductor single crystal thin film which can minimize damage of the group 3-5 nitride-based semiconductor multilayer light emitting structure thin film.

As a result, various methods have been proposed for minimizing damage and breakage of the Group 3-5 nitride-based semiconductor multilayer light emitting structure thin film when the sapphire, which is the first growth substrate, is separated using the LLO process. Figure 2 is a growth direction by introducing wafer bonding and electroplating (electroplating or electroless plating) process before performing the LLO process, according to a conventional technique for preventing damage and breakage of the semiconductor multilayer light emitting structure thin film ([0001]) is a cross-sectional view showing a process of forming a stiffening supporting substrate (stiffening supporting substrate) is in close contact. Referring to FIG. 2A, a semiconductor single crystal multilayer light emitting structure is formed from the first growth substrate 200 by irradiating a laser beam through a back-side of the first growth substrate 200 formed of transparent sapphire. Prior to separating the thin films 210 and 220, the support substrate 240 is structurally stable and strongly adhered to the bonding layer 230 by using wafer bonding and electroplating processes. In addition, referring to FIG. 2B, prior to separating the semiconductor single crystal multilayer light emitting structure thin films 210 and 220 from the first growth substrate 200 formed of sapphire, wafer bonding and an upper portion of the seed layer 232 may be performed. By using the electroplating process to form a structurally stable and strongly adhered support substrate 242.

FIG. 3 is a cross-sectional view of a group 3-5 nitride-based semiconductor light emitting device having a vertical structure manufactured by grafting a support substrate that is structurally stable and strongly adhered to the LLO process according to the conventional technique using the method of FIG. 2. admit.

3A is a cross-sectional view illustrating a semiconductor light emitting device manufactured by using the method of forming the supporting substrate of FIG. 2A. Referring to (a) of FIG. 3, which shows a cross-section of the LED bonded to the wafer bonding, the multi-layer metal layer 250 including the support substrate 240, the bonding layer 230, and the second ohmic contact electrode, which are thermal and electrical conductors, is formed. The two semiconductor cladding layer 280, the light emitting active layer 270, the first semiconductor cladding layer 260, and the first ohmic contact electrode 290 are sequentially formed. The support substrate 240, which is an electrical conductor, is preferably a semiconductor wafer such as silicon (Si), low manganese (Ge), silicon low manganese (SiGe), gallium arsenide (GaAs) having excellent thermal and electrical conductivity. Doing.

However, the support substrate 240 used in the vertical light emitting device (LED) as shown in FIG. 3A has a sapphire growth substrate on which a semiconductor single crystal thin film is stacked / grown and a thermal expansion coefficient (TEC). Because of the large difference, when the Si or other conductive support substrate wafer is bonded by wafer bonding, wafer bending and fine micro-cracks are generated inside the semiconductor multilayer light emitting structure. Due to the degraded performance of the fabricated LED, low product yield is a problem.

Meanwhile, FIG. 3B is a cross-sectional view of a semiconductor light emitting device manufactured by using the method of forming the supporting substrate of FIG. 2B. Referring to Figure 3 (b) showing a cross-sectional view of the LED grafted with electroplating, a vertical light emitting device (LED) produced by the LLO and electroplating process graft is a support substrate 242, which is an electrical conductor The seed layer 232, the multilayer metal layer 252 including the second ohmic contact electrode, the second semiconductor clad layer 280, the light emitting active layer 270, the first semiconductor clad layer 260, and the first ohmic contact electrode 290. ) Are sequentially configured. The support substrate 242, which is the electrical conductor, is a metallic thick film formed by electroplating, and in particular, is composed of a single metal such as Cu, Ni, W, Au, Mo, or the like having excellent thermal and electrical conductivity. Alloy is used first.

The LED support substrate 242 as shown in FIG. 3 (b) having the above-described structure is considerably larger than the growth substrate sapphire due to the metal or alloy thick film fabricated by electroplating. Coefficient of thermal expansion and ductility cause various problems such as curling, bending, or breaking in a single chip process such as mechanical sawing or laser scribing.

Therefore, when fabricating vertical group III-nitride semiconductor light emitting devices using the LLO process, many subsequent processes including wafer bending and cracking, micro crack generation, annealing and single chip processes ( Considering post-processing constraints and low product yield, an efficient support substrate and a high-performance vertical light emitting device manufacturing process using the same must be developed.

An object of the present invention for solving the above problems is a wafer warpage when wafer bonding a sapphire and a support substrate, which is the first growth substrate on which a group 3-5 nitride-based semiconductor multilayer light emitting structure thin film is laminated / grown, with a bonding material. Is not prepared at all, and after the LLO process, a "prepared ready substrate" for obtaining a nitride-based semiconductor single crystal multilayer thin film having no cracking and no micro-crack in the semiconductor multilayer light emitting structure is obtained. supporting substrate "(PSS)".

Another object of the present invention is to use a PSS as described above, after laminating / growing a multi-layered light emitting structure thin film composed of group III-nitride-based semiconductor single crystal on the sapphire, which is the first growth substrate, including efficient support substrate manufacturing and LLO. By providing a variety of thin film separation process to provide a high-performance vertical structure of group 3-5 nitride-based semiconductor light emitting device that can minimize the damage (damage) and breaking (breaking) of the semiconductor single crystal thin film.

Still another object of the present invention is to provide a method of manufacturing a group 3-5 nitride-based semiconductor light emitting device having the high performance vertical structure described above.

A prepared supporting substrate (hereinafter referred to as 'PSS') according to a feature of the present invention for achieving the above object is Mo, Cu, Ni, Nb, Ta, Ti, Au, Ag as an electrical conductor. A selected supporting substrate made of a metal selected from Cr, NiCr, CuW, CuMo, or NiW (hereinafter, referred to as 'SSS'); A sacrificial layer formed on the SSS; A heat-sink layer formed on the sacrificial layer and made of a thermal and electrical conductor; And a bonding layer formed on the heat sink layer.

According to another aspect of the present invention, a prepared support substrate for a semiconductor light emitting device may include a selected supporting substrate formed of an electrical conductor or an electrical insulator (hereinafter, referred to as 'SSS'); A sacrificial layer formed on the SSS and made of a material soluble by a wet etching solution; A heat-sink layer formed on the sacrificial layer and being a thermal and electrical conductor; And a bonding layer formed on the heat sink layer and formed of an alloy of soldering or brazing including at least one of Ga or Sn.

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According to another aspect of the present invention, a semiconductor light emitting device having a vertical structure includes a semiconductor multilayer light emitting structure including an n-type semiconductor cladding layer, a light emitting active layer, and a p-type semiconductor cladding layer; And a support substrate disposed under the semiconductor multilayer light emitting structure, wherein a second bonding layer, a heat sink layer, a sacrificial layer, and a selective support substrate (SSS) are sequentially stacked, and the semiconductor multilayer light emitting structure includes: the semiconductor The second bonding layer is bonded to the second bonding layer by a first bonding layer interposed between the multilayered light emitting structure and the support substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device having a vertical structure. Preparing a first wafer on which contact electrodes and a first bonding layer are stacked; (b) preparing a second wafer (PSS) in which a sacrificial layer, a heat sink layer, and a second bonding layer are sequentially stacked on the selection support substrate SSS, which is an electrical conductor; (c) bonding the first bonding layer of the first wafer and the second bonding layer of the second wafer; (d) separating the first growth substrate of the first wafer from the result of step (c); (e) forming a first ohmic contact electrode on the n-type semiconductor clad layer and passivating a side surface of the semiconductor multilayer light emitting structure; And (f) cutting the resultant of step (e) into a single chip when the thickness of the heat sink layer of the second wafer is greater than or equal to 0.1 micrometers and less than or equal to 30 micrometers.

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In addition, the method for manufacturing a semiconductor light emitting device having a vertical structure according to another aspect of the present invention (a) a semiconductor multilayer light emitting structure including an n-type semiconductor cladding layer, a light emitting active layer and a p-type semiconductor cladding layer on the first growth substrate, Preparing a first wafer on which a second ohmic contact electrode and a first bonding layer are stacked; (b) preparing a second wafer (PSS) in which a sacrificial layer, a heat sink layer, and a second bonding layer are sequentially stacked on the selection support substrate SSS, which is an electrical insulator; (c) bonding the first bonding layer of the first wafer and the second bonding layer of the second wafer; (d) separating the first growth substrate of the first wafer from the result of step (c); (e) forming a first ohmic contact electrode on the n-type semiconductor clad layer and passivating a side surface of the semiconductor multilayer light emitting structure; And (f) cutting the resultant of step (e) into a single chip.
In the step (f), when the thickness of the heat sink layer of the second wafer is greater than 80 micrometers or less than 500 micrometers, the sacrificial layer is wet etched with a wet etching solution to separate and remove the selected supporting substrate, and then a single chip. Cut into,
In the step (f), if the thickness of the heat sink layer of the second wafer is greater than 30 micrometers or less than 80 micrometers, the sacrificial layer is wet etched with a wet etching solution to separate and remove the selected supporting substrate, and A third support substrate is bonded to the heat sink layer by using a three bonding layer, and then cut into a single chip.

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As described above, according to the present invention, the first and second ohmic contact electrodes are positioned on the upper and lower surfaces of the group 3-5 nitride semiconductor single crystal multilayer light emitting structure, respectively, to improve the yield of LED chips, which are light emitting devices per wafer, and the first growth substrate. Separation of the sapphire has the advantage that it is easy to manufacture a LED, a light emitting device of a vertical structure in which heat dissipation and antistatic effectively. In addition, according to the present invention, before the separation of the sapphire growth substrate using the laser lift-off process, the sapphire growth substrate is grouped using the laser lift-off process by performing wafer bonding of the prepared support substrate with no wafer warpage. Micro cracks or cracks in group III-nitride semiconductors, which reduce the stress that group III-nitride semiconductor layers will receive when separated from the group 5 nitride semiconductor multilayer light emitting structure, and group III-nitride semiconductors The loss of separation of the thin film into the wafer bonding material is minimized.

In addition, when fabricating a light emitting device as a group 3-5 nitride-based semiconductor multilayer light emitting structure on the prepared support substrate, it is possible to freely follow-up processes such as heat treatment and passivation, and as a result, high reliability light emission without any thermal and mechanical damage A device can be obtained. In addition, when a highly reliable light emitting device fabricated on the prepared support substrate is subjected to a unified chip process, a wet etching process may be used rather than a conventional machine and laser processing, and thus it may be achieved in a wafer bonding technique using a conventional support substrate. It has the advantage of greatly improving chip yield and productivity which were not available.

In addition, in the present invention, many unified light emitting devices (LEDs) fabricated on top of a "prepared support substrate (PSS)" wafer, which are invented, are not mechanically polished without some mechanical processing such as sawing or laser scribing. In addition, a light emitting device having a high performance vertical structure having a single chip shape may be manufactured by using a sacrificial layer formed on the prepared support substrate PSS.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a prepared support substrate (PSS) according to a preferred embodiment of the present invention, a group 3-5 nitride-based semiconductor light emitting device having a vertical structure using the same, and a method of manufacturing the same will be described in detail.

Prepared support substrate ( PSS First preferred Example

Hereinafter, the structure and manufacturing process of the PSS according to the preferred embodiment of the present invention will be described with reference to FIG. 4.

Figure 4 (a) is a cross-sectional view showing a PSS according to a preferred embodiment of the present invention.

Referring to FIG. 4A, the PSS 40 is referred to as a selected supporting substrate (hereinafter referred to as 'SSS') 400, a sacrificial layer 410, and a heat-sink layer. 420 and a bonding layer 430. Manufacturing process of PSS 40 having the above-described structure is a. Preparing a selected supporting substrate (SSS); b. Sacrificial layer formation; c. Forming a heat-sink layer; d. Process steps of forming a bonding layer. As shown in (a) of FIG. 4, the PSS 40 according to the preferred embodiment of the present invention basically consists of a tri-layer on top of the SSS 400. That is, the sacrificial layer 410, the heat sink layer 420, and the bonding layer 430 are sequentially stacked on the SSS 400, which is an electrical insulator.

Hereinafter, the structure and manufacturing process of the above-described PSS will be described in detail.

The selected supporting substrate (hereinafter referred to as 'SSS') 400 is characterized by having excellent thermal and electrical conductivity. The SSS 400 is a single crystal or polycrystalline wafer such as Si, Ge, SiGe, ZnO, GaN, AlGaN, GaAs, GaP, InP, ITO, or Mo, Cu, Ni, Nb, Ta, Ti, Au, Ag, Cr Metal foils, such as NiCr, CuW, CuMo, and NiW, are preferable.

The selective supporting substrate 400 is separated by several micrometers in thickness (LLO) when the group III-nitride-based semiconductor single crystal multilayer light emitting structure thin film is separated from the first growth substrate sapphire using a laser beam as a strong energy source. In order to minimize the damage of the thin film of the single crystal multi-layered light emitting structure having a role of actuating (absorption of mechanical impact) and support of the laser beam. When selecting such a support substrate (SSS) should be appropriately selected according to the LED manufacturing process, which is a light emitting device of a single vertical structure to be finally manufactured.

The sacrificial layer 410 may be formed of a material that is easily dissolved in a wet etching solution, and may be formed of, for example, an oxide, nitride, semiconductor, metal, alloy, or solid solution that is easily dissolved by a wet etching solution. . The sacrificial layer 410 is easily dissolved in a wet etching solution according to the LED structure of the final vertical semiconductor light emitting device to be manufactured to separate the SSS 400 and the multilayer light emitting structure thin film of the light emitting device. ) Or to bond the SSS 400 and the multilayered light emitting structure of the light emitting device more strongly. The sacrificial layer may be formed by one of e-beam deposition, thermal evaporatorion, MOCVD, sputtering, or pulse laser deposition (PLD).

The heat-sink layer 420 smoothly dissipates a large amount of heat generated when driving the LED, which is the finally manufactured vertically structured light emitting device, to the outside and at the same time, a strong bonding of upper and lower layers, It serves as a support. Therefore, the heat sink layer 420 is preferably composed of a metal, an alloy, or a solid solution having excellent thermal and electrical conductivity. For example, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr. , Ta, Al, Pd, Pt, Si is made of a metal or an alloy containing at least one of them, preferably having a thickness of 0.1 to 500 micrometers.

The heat sink layer 420 may be formed by various physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods, but it is more preferable to first perform the electroplating or electroless plating method.

The bonding layer 430 is formed to bond the first wafer, which is a sapphire growth substrate on which a group III-nitride-based semiconductor single crystal multilayer thin film is laminated / grown, and the prepared support substrate PSS. As the material layer, the bonding layer 430 may be soldered or brazed including at least one of Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, and Ge. It is preferably made of a brazing alloy material. The bonding layer may be formed by one of physical vapor deposition, chemical vapor deposition or electrochemical deposition.

In addition, the PSSs 40 and 42 shown in FIGS. 4A and 4B have a heat sink layer having a thin thickness of 80 micrometers or less on top of the SSS 400 which is a thermally and electrically excellent conductor. 420 is formed. The PSSs 40 and 42 are sawing or laser cutting only in the vertical direction (AA 'arrow direction) to make a single chip after sequentially performing the first wafer, wafer bonding, LLO process, and subsequent processes. Laser scribing is performed to produce a single LED chip of vertical structure which is the final light emitting device.

On the other hand, the PSSs 44, 46, and 48 shown in FIGS. 4C, 4D, and 8E have a heat sink layer 422 having a thick thickness of 80 to 500 micrometers. When the heat sink layer 422 is relatively thick, such as the PSSs 44, 46 and 48, sawing or laser scribing is performed in the vertical direction (AA 'arrow direction) to make a single chip. At the same time, the sacrificial layer 410 is wet-etched in the horizontal direction (BB 'arrow direction) to separate and complete the LED single chip of vertical structure which is the final light emitting device.

Prepared support substrate ( PSS 2nd of) Example

Hereinafter, a PSS according to another embodiment of the present invention will be described.

5 is a cross-sectional view illustrating the PSSs according to another embodiment of the present invention. The PSSs 50, 52, 54, 56 and 58 according to the present embodiment are made of SSS 500 which is thermally and electrically insulated.

The SSS 400 of the PSS according to the present embodiment is preferably an electrically insulating material having a difference of a thermal expansion coefficient of 2 ppm or less from an initial growth substrate. For example, sapphire (Al 2 O 3), aluminum nitride ( AlN), MgO, AlSiC, BN, BeO, TiO2, SiO2, glass, and the like, and a wafer of a single crystal, polycrystalline, or amorphous substrate.

The PSSs 50 and 52 shown in FIGS. 5A and 5B include a relatively thin thickness (less than 80 micrometers) heat sink layer 520 and a thermally / electrically insulator SSS 500. PSS 54, 56, 58 shown in FIGS. 5C, 5D, and 5E have a heat sink layer 522 having a relatively thick thickness (having a thick thickness of 80 to 500 micrometers). ) And SSS 500 that is thermally / electrically insulator. 5 (a) and 5 (c) show the unpatterned PSS, and FIGS. 5 (b), 5 (d) and 8 (e) show the patterned PSS. As shown in Figure 5, the prepared support substrate (PSS) is basically composed of a tri-layer (tri-layer). That is, the sacrificial layer 510, the heat sink layer 520, and the bonding layer 530 are sequentially stacked on the selection supporting substrate 500, which is an electrical insulator.

In more detail, the sacrificial layer 510 is easily dissolved in a wet solution and serves to separate the selected support substrate 500 and the multilayer light emitting structure thin film of the light emitting device. The sacrificial layer may be formed by one of e-beam deposition, thermal evaporatorion, MOCVD, sputtering, or pulse laser deposition (PLD).

The heat sink layer 520 is composed of a metal, an alloy, or a solid solution having excellent thermal and electrical conductivity, so that a large amount of heat generated when driving a light emitting device can be smoothly dissipated to the outside, and a strong bonding and support of upper and lower layers is provided. (support) role.

Therefore, the heat sink layer 520 is preferably composed of a metal, an alloy, or a solid solution having excellent thermal and electrical conductivity. For example, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, It is preferably made of a metal selected from Cr, Ta, Al, Pd, Pt, Si or an alloy containing at least one of them, and having a thickness of 0.1 to 500 micrometers.

The heat sink layer 520 may be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD). However, the heat sink layer 520 may be formed by electroplating or electroless plating.

The bonding layer 530 is preferably made of the same material as that of the bonding layer including a diffusion barrier layer laminated / formed on the uppermost layer of the first wafer, which is a sapphire growth substrate on which group III-nitride semiconductor single crystal multilayer thin films are stacked / grown. Although more preferred to use, other materials may be used. For example, the bonding layer 530 may include soldering or brazing including at least one of Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, and Ge. It is preferably made of brazing alloy material. The bonding layer 530 may be formed by one of physical vapor deposition, chemical vapor deposition, and electrochemical deposition.

In addition, as shown in (a) to (e) of Figure 5, the PSS according to the present embodiment is correlated with the thickness of the heat sink layer 520 stacked on top of the SSS 500, which is thermally and electrically nonconducting. After the first wafer, wafer bonding, LLO process, and subsequent processes are sequentially performed, sawing or laser scribing in the vertical direction (AA 'arrow direction) to make a single chip is performed simultaneously in the horizontal direction (BB The sacrificial layer 510 is wet-etched in the direction of arrow 'to complete the separation of a single LED chip having a vertical structure as a final light emitting device.

PSS First of the semiconductor light emitting device using Example

Hereinafter, the structure and manufacturing process of the first embodiment of the semiconductor light emitting device using the PSS according to the present invention will be described in detail with reference to FIGS. 6 and 7.

6 is a cross-sectional view of a semiconductor light emitting device 60 using a PSS according to a first embodiment of the present invention. As shown in FIG. 6, the high performance vertical semiconductor light emitting device 60 includes a first ohmic contact electrode 680, a buffer layer 610, and an n-type semiconductor cladding layer 620. A light-emitting active layer 630, a p-type semiconductor cladding layer 640, a second ohmic contact electrode 650, and a first bonding layer 660 are stacked. The second bonding layer 788, the heat sink layer 786, the sacrificial layer 784, and the SSS 782 are stacked on the first bonding layer 660.

More preferably, the first ohmic contact electrode 680 may be formed on the n-type semiconductor clad layer 620 after removing the buffer layer 610.

The SSS 782 of the PSS 780 used to fabricate the semiconductor light emitting device according to the present embodiment is an electric conductor, and the semiconductor light emitting device is manufactured regardless of the thickness of the heat sink layer 786 of the PSS. Meanwhile, the semiconductor light emitting device may selectively separate and remove the SSS of the PSS in the step of finally manufacturing a single chip according to the thickness of the heat sink layer 786 of the PSS. In this case, when the thickness of the heat sink layer is 80 micrometers or more, the sacrificial layer may be dissolved in the wet etching solution to separate and remove the SSS.

Hereinafter, referring to FIGS. 7A to 7F, the manufacturing process of the high performance vertical semiconductor light emitting device 60 having the above-described structure according to the present embodiment will be described sequentially.

Referring to FIG. 7, the manufacturing process of the high performance vertical semiconductor light emitting device 60 using the PSS according to the present embodiment includes a. Preparing a first wafer in which a group III-nitride-based semiconductor multilayer light emitting structure is stacked / grown on top of sapphire, which is the first growth substrate (see FIG. 7A); b. Preparing a second wafer which is a prepared support substrate (PSS) 780 (see FIG. 7B); c. Wafer bonding (see FIG. 7C); d. Sapphire liftoff, the first growth substrate (see FIG. 7D); e. Post-processing (see FIG. 7E); f. Process steps of manufacturing a single chip (see FIG. 7F) are included.

Hereinafter, each process step described above will be described in detail.

Referring to FIG. 7A, the first wafer preparation step, which is a step a process, lifts off a multi-layered light emitting structure thin film composed of a group 3-5 nitride-based semiconductor from a growth substrate by applying an LLO process. In order to do this, a high quality semiconductor single crystal multilayer thin film is necessarily laminated / grown on a transparent sapphire growth substrate. Low and high temperature buffer layer (low and high temperature buffer layer), which is a basic multilayer light emitting structure thin film of a light emitting device, is formed on top of the first growth substrate 600 composed of sapphire using MOCVD and MBE system, which is a general group III-nitride semiconductor thin film growth equipment. high temperature buffering layer (610), n-type semiconductor cladding layer (620), light-emitting active layer (630), p-type semiconductor cladding layer (640) ) Are sequentially stacked / grown.

Next, a high reflective second ohmic contact electrode 650 is formed on the p-type semiconductor cladding layer, which is the uppermost layer of the multilayer light emitting structure thin film, and a first bonding layer 660 including a diffusion barrier layer. Are stacked / formed continuously.

In addition, before performing wafer bonding with the second wafer, which is the PSS 780, a sapphire growth substrate for forming a single chip by using a patterning and dry etching process in which a plurality of rectangular or square arrays are regularly arranged. Or to form trenches 670 deeper. In some cases, a trench-free first wafer substrate is also applicable. The highly reflective second ohmic contact electrode 650 may include Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, metallic silicide, Ag-based alloy, Al-based alloy, Rh-based alloy, CNTNs (carbon nanotube networks), a transparent conductive oxide, and a transparent conductive nitride, wherein the diffusion barrier layer is formed of Ti, W, Cr, Ni, Pt, NiCr, TiW, CuW, Ta, TiN, CrN , TiWN is formed of a material layer including at least one, the first bonding layer 660 is Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, Ge It is preferably made of an alloying material of soldering or brazing comprising at least one of.

In the a-stage process, the first organic substrate, the transparent organic sapphire 600, metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (hydride vapor phase epitaxy), A group III-nitride-based semiconductor thin film deposited / grown using a molecular beam epitaxy or metal organic vapor phase epitaxy (MOVPE) device is formed of In _x (Ga _y Al _1-y ) N (0 It is preferred to have a composition of? X? 1, 0? Y?

The high temperature buffer layer 610 may be a group 3-5 nitride-based semiconductor doped with silicon (Si). The semiconductor light emitting active layer 630 has a single quantum well (SQW) structure or a multi quantum well formed of a barrier layer of Inx (GayAl1-y) N and a well layer of Inx (GayAl1-y) N. well; MQW) structure, and by controlling the composition ratio of In, Ga, Al of the light emitting active layer 630, from the long wavelength having the InN (~ 0.7eV) bandgap to the short wavelength having the AlN (~ 6.2eV) bandgap The device can be produced freely. The well layer of the light emitting active layer 630 has a band gap lower than that of the barrier layer so that electrons and holes, which are carriers, are collected in the wells. In order to lower the driving voltage, Si or Mg may be doped in at least one of the well layer and the barrier layer.

In addition, it is preferable to perform at least one heat treatment step before the wafer bonding in order to further improve the interfacial bonding force between the layers, including forming the highly reflective second ohmic contact electrode.

Referring to FIG. 7B, a step of preparing a second wafer including the PSS 780 which is a step b process is performed. The prepared supporting substrate (PSS) is basically a sacrificial layer (784), heat-sink layer (786) on top of the selected supporting substrate (SSS) 782 to be used; ), A second bonding layer 788 is sequentially stacked / configured. As described above, the coefficient of thermal expansion (TEC) of the PSS 780 composed of three layers on top of the SSS 782 is considerably material selected and configured to have a value similar to or the same as that of the sapphire or nitride semiconductor, which is the first growth substrate. It is important.

The SSS 782 is a single crystal, polycrystalline, or amorphous wafer such as Si, Ge, SiGe, ZnO, GaN, AlGaN, GaAs, GaP, InP, ITO, which is an electrically conductive and excellent thermal conductivity, or Mo, Metal foils, such as Cu, Ni, Nb, Ta, Ti, Au, Ag, Cr, NiCr, CuW, CuMo, NiW, are preferable. In addition, the sacrificial layer 784 existing between the SSS 782 and the heat sink layer 786 is preferably formed of a thermally stable metal, alloy, or solid solution.

In more detail, the sacrificial layer 784, which is the first layer, is primarily used to smoothly perform the unification process without thermal / mechanical impact on the completed neighboring single chips when finally manufacturing a single chip. It consists of a material that dissolves rapidly in a wet-etching solution, for example, oxides, nitrides, metals, alloys, solid solutions, semiconductors, insulators, etc., which are easily dissolved by a wet etching solution. It can be composed of materials.

The heat sink layer 786 formed of a material having excellent thermal and electrical conductivity, the second layer, easily dissipates heat generated when the light emitting device is driven to the outside, and simultaneously supports a multi-layered light emitting structure that is a light emitting device. Preferred are metals, alloys, solid solutions and semiconducting materials.

The second bonding layer 788 for wafer bonding with the first wafer, which is the third layer, is preferably made of the same material as the first bonding layer 660 positioned on the uppermost layer of the first wafer. It may be composed of a substance. In addition, the three layers stacked on the SSS of the PSS is preferably carried out by a physical or chemical vapor deposition method, but in particular, the heat sink layer is more preferably carried out by the electroplating (electroplating and electroless plating) method.

The sacrificial layer 784 is at least one of AlAs, SiO ₂ , Si ₃ N ₄ , ITO, Sn ₂ O, In ₂ O ₃ , ZnO, ZnS, ZnSe, CrN, TiN, Cr, various metals, alloys, oxides The heat sink layer 786 may be formed of a material including a material including Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, It is formed of a material containing at least one or more of various metals or alloys containing at least one component of Si, the second bonding layer 788 is Ga, Bi, In, Sn, Pb, Au, Al, Ag, It is preferably made of an alloying material of soldering or brazing comprising at least one of Cu, Ni, Pd, Si, Ge.

Referring to FIG. 7C, the next c step process, wafer bonding, bonds the first wafer and the second wafer by a thermocompressive method. Heat-compression bonding in the step c process is preferably carried out at a pressure of 1Mpa to 200Mpa at a temperature of 100 ℃ or more.

Next, referring to FIG. 7 (d), the step d process is a step of separating the sapphire substrate, which is the first growth substrate, by using LLO technology. In order to separate the first growth substrate, the laser beam, a strong energy source, is irradiated through the transparent sapphire back-side, resulting in a strong laser absorption at the interface between the semiconductor single crystal multilayer light emitting structure and the sapphire. The first growth substrate sapphire is lifted off by thermo-chemical dissolution reaction of gallium nitride (GaN) at the interface. At this time, it is preferable to include the step of treating the surface of the group 3-5 nitride-based semiconductor thin film exposed to air with at least one of H ₂ SO ₄ , HCl, KOH, BOE at 30 ℃ to 200 ℃ temperature. In addition to the LLO method, the initial growth substrate 600 may also be removed through mechanical-chemical polishing and subsequent wet etching. The wet etching of the first growth substrate 600, sapphire growth substrate is sulfuric acid (H ₂ SO ₄ ), chromic acid (CrO ₃ ), phosphoric acid (H ₃ PO ₄ ), gallium (Ga), magnesium (Mg), indium (In ), It is preferable that the mixed solution of any one of aluminum (Al) or a combination thereof is performed as an etching solution. More preferably, the wet etching solution has a temperature of 200 ° C or higher.

Next, referring to FIG. 7E, the e-step process includes passivation, dry-etching, and first ohmic contact of the light emitting device, including wafer cleaning, which is a postannealing process. Electrode material deposition and heat treatment are performed. The step e is performed to form a thermally stable first ohmic contact electrode 680 on the n-type semiconductor clad layer 620 or the buffer layer 610 through a first ohmic contact electrode material deposition and heat treatment process, and Si ₃ N More preferably, the method further comprises electrically passivating the surface or side of the group III-nitride semiconductor device using at least one of ₄ , SiO ₂ , or various electrical insulator materials.

In addition, the first ohmic contact electrode 680 is Al, Ti, Cr, Ta, Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, In, La, Sn, Si, Ge, Zn, Mg, NiCr , PdCr, CrPt, NiTi, TiN, CrN, SiC, SiCN, InN, AlGaN, InGaN, rare earth metals and alloys, metallic silicides, semiconducting silicides, carbon nanotube networks (CNTNs), transparent conductive oxides It is preferable to form a material including at least one of transparent conducting oxide (TCO) and transparent conducting nitride (TCN).

Next, referring to FIG. 7F, the step f process is a step of finally manufacturing a single chip. The final single chip fabrication process uses a PSS 780 composed of a second bonding layer 788, a heat sink layer 786, a sacrificial layer 784, and an SSS 782 in the vertical direction (AA 'arrow direction). Only by cutting to finally manufacture a single light emitting device LED chip as shown in FIG. In particular, the sacrificial layer 784, which is present between the SSS 782 and the heat sink layer 786, which is an electrical conductor, is not dissolved in a wet solution to separate the selected support substrate from the heat sink, but is interlayer bonding. (bonding) plays a role.

PSS Second of the semiconductor light emitting device using Example

Hereinafter, the structure and manufacturing process of the second embodiment of the semiconductor light emitting device using the PSS according to the present invention will be described in detail with reference to FIGS. 8 and 9.

8 is a cross-sectional view of a semiconductor light emitting device 80 using a PSS according to a second embodiment of the present invention. As illustrated in FIG. 8, the high performance vertical semiconductor light emitting device 80 includes a first ohmic contact electrode 880, a buffer layer 810, and an n-type semiconductor cladding layer 820. A light-emitting active layer 830, a p-type semiconductor cladding layer 840, a second ohmic contact electrode 850, and a first bonding layer 860 are stacked. The second bonding layer 988, the heat sink layer 986, the third bonding layer 920, and the third support substrate 930 are stacked on the first bonding layer 860.

More preferably, the first ohmic contact electrode 680 may be formed on an upper surface of the n-type semiconductor clad layer 620 after removing the buffer layer 610.

The SSS 982 of the PSS 980 used in the fabrication of the semiconductor light emitting device according to the present embodiment is an sapphire (Al) that is an electrically insulating material having a difference in thermal expansion coefficient of 2 ppm or less from an initial growth substrate. ₂ O ₃ ), aluminum nitride (AlN), MgO, AlSiC, BN, BeO, TiO ₂ , SiO ₂ , a wafer of a single crystal, polycrystalline, or amorphous substrate, such as glass, the semiconductor light emitting device is a The heat sink layer 786 has a thickness of 80 micrometers or less and is formed to be relatively thin.

Accordingly, in the semiconductor light emitting device according to the present embodiment, the SSS 982, which is an electrical insulator, is separated and removed through the sacrificial layer 984, and the new third support substrate 930 is wafer-processed using the third bonding layer 920. Produce by bonding. The third support substrate 930 may be a single crystal or polycrystalline wafer such as Si, Ge, SiGe, ZnO, GaN, AlGaN, GaAs, etc. having excellent thermal and electrical conductivity, or Mo, Cu, Ni, Nb, Ta, Ti, Metal foils such as Au, Ag, Cr, NiCr, CuW, CuMo, NiW and the like are preferable. In addition, the third bonding layer 920 existing between the third support substrate 930 and the heat sink layer 986 is preferably formed of a thermally stable metal, alloy, or solid solution.

Hereinafter, referring to FIGS. 9A to 9H, a manufacturing process of a high-performance vertical semiconductor light emitting device 80 having the above-described structure according to the present embodiment will be described sequentially. The description of the overlapping parts of the manufacturing process of the first embodiment described above in the manufacturing process of the semiconductor light emitting device 90 of the high-performance vertical structure using the PSS according to the present embodiment will be omitted.

First, referring to FIG. 9A, the step a is a step of preparing a first wafer by forming a semiconductor multilayer light emitting structure on the first growth phase 800 formed of transparent sapphire. The semiconductor multilayer light emitting structure thin film may include a low and high temperature buffering layer (810), an n-type semiconductor cladding layer (820), a light-emitting active layer (830), The p-type semiconductor cladding layer 840 is sequentially stacked / grown.

Next, a high reflective second ohmic contact electrode 850 is formed on the p-type semiconductor clad layer, which is the uppermost layer of the multilayer light emitting structure thin film, and includes a first bonding layer including a diffusion barrier layer. Are stacked / formed continuously.

In addition, before performing wafer bonding with the second wafer, which is the PSS 980, a sapphire growth substrate for forming a single chip using a patterning and dry etching process in which a plurality of rectangular or square arrays are regularly arranged. Or to form trench 870 deeper. In some cases, a first wafer substrate without a trench can also be applied.

The highly reflective second ohmic contact electrode 850 may include Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, metallic silicide, Ag alloy, Al alloy, Rh alloy, CNTNs (carbon nanotube networks), a transparent conductive oxide, and a transparent conductive nitride, wherein the diffusion barrier layer is formed of Ti, W, Cr, Ni, Pt, NiCr, TiW, CuW, Ta, TiN, CrN , TiWN is formed of a material layer including at least one, the first bonding layer 860 is Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, Ge It is preferably made of an alloying material of soldering or brazing comprising at least one of.

Next, referring to FIG. 9B, the step b process is a step of preparing the PSS 980. The PSS 980 used in this embodiment includes a sacrificial layer 984 on top of the SSS 982, a heat-sink layer 986 of relatively thin thickness (80 micrometers or less), And a second bonding layer 988 is sequentially configured.

The SSS 982 is an electrically insulating material of sapphire (Al ₂ O ₃ ), aluminum nitride (AlN), MgO, AlSiC, BN, an electrically insulating material having a thermal expansion coefficient difference of 2 ppm or less from an initial growth substrate. It is made of a wafer of a single crystal, polycrystalline, or amorphous substrate, such as BeO, TiO ₂ , SiO ₂ , glass, the sacrificial layer 984 is AlAs, SiO ₂ , Si ₃ N ₄ , ITO, SnO ₂ , In ₂ O ₃ , ZnO, ZnS, ZnSe, CrN, TiN, Cr, formed of a material containing at least one or more of various metals, alloys, oxides, the thin heat sink layer 986 is Cu, Ni, Ag, Mo , Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, is formed of a material containing at least one or more of various metals or alloys containing at least one component of Si, the second bonding Layer 988 is a soldering or brazing alloy material comprising at least one of Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, Ge. By From being bait it is preferred.

Referring to FIG. 9C, wafer bonding, which is the next step c, bonds the first wafer and the second wafer by a thermocompressive method. Heat-compression bonding in the step c process is preferably carried out at a pressure of 1Mpa to 200Mpa at a temperature of 100 ℃ or more.

Next, referring to FIG. 9 (d), the d step process is to lift off the transparent sapphire substrate, which is the first growth substrate 800.

Next, referring to FIG. 9E, the step e process is a subsequent process step. The subsequent process may form a thermally stable first ohmic contact electrode 880 through the first ohmic contact electrode material deposition and heat treatment process on the buffer layer 810 or the n-type semiconductor clad layer 820, and Si ₃ N _4. And further preferably electrically passivating the surface or side of the group III-nitride semiconductor device using at least one of SiO ₂ , or various electrical insulator materials. Do.

In addition, the first ohmic contact electrode 880 may include Al, Ti, Cr, Ta, Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, In, La, Sn, Si, Ge, Zn, Mg, NiCr, PdCr, CrPt, NiTi, TiN, CrN, SiC, SiCN, InN, AlGaN, InGaN, rare earth metals and alloys, metallic silicides, semiconducting silicides, CNTNs (carbonnanotube networks), transparent conductive It is preferable to form a material including at least one of a transparent conducting oxide (TCO) and a transparent conducting nitride (TCN).

Next, referring to FIGS. 9F and 9G, the step f process is completed in two steps. First, a temporary supporting substrate (TSS) 910 is attached to the prepared opposite direction of the PSS with an organic or inorganic bonding material, and then HF, BOE, or H, depending on the material used as the sacrificial layer 984. ₂ SO _4, HNO _3, H ₃ PO _4, KOH, NHOH, various acid, base, or salt thereof using a wet etching solution such as a solution by dissolving the sacrificial layer (984) SSS (982), such as KI BB ' Remove by separating along the direction of the arrow.

Next, referring to FIG. 9 (h), it is a step of finally completing a single chip. First, the third support substrate 930 and the heat sink layer 986 are bonded to each other by using the third bonding layer 920 formed of the electrically conductive soldering or brazing metal or alloy, and are perpendicular to each other (AA). 'Arrow direction) is cut to finally produce an LED chip, a single light emitting device as shown in FIG. 8.

PSS Third of the semiconductor light emitting device using Example

Hereinafter, the structure and manufacturing process of the third embodiment of the semiconductor light emitting device using the PSS according to the present invention will be described in detail with reference to FIGS. 10 and 11.

10 is a cross-sectional view of a semiconductor light emitting device 10 using a PSS according to a third embodiment of the present invention. As shown in FIG. 10, the high performance vertical semiconductor light emitting device 10 may include a first ohmic contact electrode 1080, a buffer layer 1010, and an n-type semiconductor cladding layer 1020. A light-emitting active layer 1030, a p-type semiconductor cladding layer 1040, a second ohmic contact electrode 1050, and a first bonding layer 1060 are stacked. The second bonding layer 1188 and the heat sink layer 1186 are stacked on the first bonding layer 1060.

More preferably, the first ohmic contact electrode 1080 may be formed on an upper surface of the n-type semiconductor clad layer 1020 after removing the buffer layer 1010.

The SSS 1182 of the PSS 1180 used in the manufacture of the semiconductor light emitting device according to the present embodiment is an sapphire (Al) that is an electrically insulating material having a difference in thermal expansion coefficient of 2 ppm or less from an initial growth substrate. ₂ O ₃ ), aluminum nitride (AlN), MgO, AlSiC, BN, BeO, TiO ₂ , SiO ₂ , consisting of a wafer of a single crystal, polycrystalline, or amorphous substrate, such as glass, The semiconductor light emitting device is characterized in that the heat sink layer 1186 stacked on the SSS (1182) has a relatively thick thickness (80 to 500 micrometers).

Therefore, in the light emitting device according to the present embodiment, the thick heat sink layer 1186 emits light without the support of the third supporting substrate after the SSS 1182, which is an electrical insulator, is separated and removed through the sacrificial layer 1184. Supports the multi-layered light emitting structure of the device.

Hereinafter, referring to FIGS. 11A to 11H, a manufacturing process of a semiconductor light emitting device 10 having a high performance vertical structure having the above-described structure according to the present embodiment will be described sequentially. However, description overlapping with that in the first or second embodiment described above will be omitted.

First, referring to FIG. 11A, in the step a, a semiconductor multilayer light emitting structure is formed on a transparent sapphire growth substrate, which is the first growth substrate 1000. The semiconductor multilayer light emitting structure includes a low / high temperature buffering layer (1010), an n-type semiconductor cladding layer (1020), a semiconductor light-emitting active layer (1030). , Mg-doped p-type semiconductor cladding layer 1040 is sequentially stacked / grown in a multi-layer structure, the high temperature buffer layer 1010 is a group 3 doped with silicon (Si) It is preferable that it is a group -5 nitride type semiconductor. In addition, the first bonding layer 1060 including the highly reflective second ohmic contact electrode 1050 and the diffusion barrier layer is sequentially stacked / formed on the p-type semiconductor clad layer 1040, which is the uppermost layer of the semiconductor multilayer light emitting structure thin film.

Next, referring to FIG. 11B, the step b process is a step of preparing the PSS 1180. The PSS 1180 includes an SSS 1182 formed of an electrical insulator, a sacrificial layer 1184, a relatively thick heat-sink layer 1186 and a second bonding. A bonding layer 1188 is configured sequentially. Since the PSS 1180 is the same as the PSS 980 of the above-described second embodiment except for the thickness of the heat sink layer 1186, a redundant description thereof will be omitted.

Referring to FIG. 11C, wafer bonding, which is the next step c, bonds the first wafer and the second wafer by a thermocompressive method. Heat-compression bonding in the step c process is preferably carried out at a pressure of 1Mpa to 200Mpa at a temperature of 100 ℃ or more.

Next, referring to FIG. 11D, the transparent sapphire substrate, which is the first growth substrate 1000, is lifted off in the d step process.

Next, referring to FIG. 11E, a subsequent process is performed in the step e. The subsequent process forms a thermally stable first ohmic contact electrode 1080 by depositing and thermally treating the first ohmic contact electrode material on the buffer layer 1010 or the n-type semiconductor clad layer 1020, and Si ₃ N _4. And further preferably electrically passivating the surface or side of the group III-nitride semiconductor device using at least one of SiO ₂ , or various electrical insulator materials. Do.

 In addition, the first ohmic contact electrode 1080 may include Al, Ti, Cr, Ta, Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, In, La, Sn, Si, Ge, Zn, Mg, NiCr. , PdCr, CrPt, NiTi, TiN, CrN, SiC, SiCN, InN, AlGaN, InGaN, rare earth metals and alloys, metallic silicides, semiconducting silicides, carbon nanotube networks (CNTNs), transparent conductive oxides It is preferable to form a material including at least one of transparent conducting oxide (TCO) and transparent conducting nitride (TCN).

Next, referring to FIGS. 11F and 11G, a temporary supporting substrate (TSS) 1110 is attached with an organic or inorganic bonding material in the opposite direction of the PSS, and the sacrificial layer 1184 is attached thereto. The sacrificial layer 1184 is dissolved using an acid, base, or salt solution determined according to the material used to remove the SSS 1182 by separating it along the arrow direction (BB ′ direction). Next, referring to Figure 11 (h), by cutting in the vertical direction (AA 'arrow direction) to finally produce a LED chip as a single light emitting device as shown in FIG.

Although the present invention has been described with reference to the embodiments illustrated in the accompanying drawings, it is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Particularly, homoepitaxial group III-nitride-based semiconductor growth substrates and group III-nitride-based semiconductor multilayer thin films formed by growing group III-nitride-based semiconductors on the sapphire growth substrate are vertically structured lasers. It will be appreciated that various optoelectronic devices, including diodes and transistors, are also applicable. Accordingly, the true scope of protection of the present invention should be determined only by the appended claims.

1 is a cross-sectional view illustrating a laser lift-off (LLO) process that is generally performed in manufacturing a semiconductor light emitting device having a vertical structure according to the related art.

FIG. 2 illustrates a structure in which a support substrate is structurally stable and tightly adhered to a group 3-5 nitride-based semiconductor single crystal thin film growth direction before performing a laser lift off (LLO) process according to the related art. Cross-sectional views.

3 is a cross-sectional view of a group 3-5 nitride-based semiconductor light emitting device having a vertical structure manufactured by incorporating a support substrate that is structurally stable and strongly adhered to the LLO process according to the related art.

4A to 4E are stack sectional views illustrating various embodiments of a prepared support substrate (hereinafter, referred to as a 'PSS') according to a first embodiment of the present invention.

5 (a) to 5 (e) are stacked cross-sectional views illustrating various embodiments of the PSS according to the second embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a first embodiment of a semiconductor device having a vertical single chip structure manufactured using a PSS according to the present invention, and FIG. 7 is a semiconductor light emitting device according to the first embodiment of FIG. Cross-sectional views sequentially illustrating a manufacturing process of the device.

FIG. 8 is a cross-sectional view illustrating a second embodiment of a semiconductor device having a vertical single-chip vertical structure manufactured using the PSS according to the present invention, and FIG. 9 is a semiconductor light emitting device according to the second embodiment of FIG. 8. Cross-sectional views sequentially illustrating a manufacturing process of the device.

FIG. 10 is a cross-sectional view illustrating a third embodiment of a semiconductor device having a vertical vertical structure having a single chip shape manufactured using the PSS according to the present invention, and FIG. 11 is a semiconductor light emitting device according to the third embodiment of FIG. 10. Cross-sectional views sequentially illustrating a manufacturing process of the device.

Claims (25)

A selected supporting substrate made of a metal selected from Mo, Cu, Ni, Nb, Ta, Ti, Au, Ag, Cr, NiCr, CuW, CuMo or NiW (hereinafter referred to as 'SSS'); A sacrificial layer formed on the SSS; A heat-sink layer formed on the sacrificial layer and made of a thermal and electrical conductor; And A prepared supporting substrate (hereinafter, referred to as a 'PSS') comprising a bonding layer formed on the heat sink layer. The method of claim 1, The sacrificial layer PSS for semiconductor light emitting device, characterized in that consisting of a metal, an alloy, or a solid solution that is a thermal and electrical conductor. The method of claim 1, The heat sink layer is made of an alloy or a solid solution containing at least one of Cu, Ni, Ag, Mo, Al, Au, W, Ti, Cr, Ta, Al, Pd, Pt or Si, and 0.1 to 500 PSS for semiconductor light emitting device, characterized in that it has a thickness of micrometer. The method of claim 1, The bonding layer is made of an alloy of soldering or brazing including at least one of Ga, Bi, In, Sn, Pb, Au, Al, Ag, Cu, Ni, Pd, Si, or Ge. PSS for semiconductor light emitting device The method of claim 1, The bonding layer is formed by one of physical vapor deposition, chemical vapor deposition, or electrochemical vapor deposition, and the sacrificial layer may be E-beam vapor deposition, thermal evaporatorion, MOCVD, sputtering, or PLD (Pulse Laser). And heatsink layer is formed by physical vapor deposition, chemical vapor deposition, or electroplating. delete delete delete delete delete delete a semiconductor multilayer light emitting structure including an n-type semiconductor clad layer, a light emitting active layer, and a p-type semiconductor clad layer; And Located at the bottom of the semiconductor multi-layer light emitting structure, the second bonding layer, the heat sink layer, the sacrificial layer and the support substrate (SSS) is sequentially stacked, And the semiconductor multilayer light emitting structure is bonded to the second bonding layer by a first bonding layer interposed between the semiconductor multilayer light emitting structure and the support part. delete delete (a) preparing a semiconductor wafer including a n-type semiconductor cladding layer, a light emitting active layer, and a p-type semiconductor cladding layer, a second ohmic contact electrode, and a first bonding layer stacked on top of the first growth substrate; Making; (b) preparing a second wafer (PSS) in which a sacrificial layer, a heat sink layer, and a second bonding layer are sequentially stacked on the selection support substrate SSS, which is an electrical insulator; (c) bonding the first bonding layer of the first wafer and the second bonding layer of the second wafer; (d) separating the first growth substrate of the first wafer from the result of step (c); (e) forming a first ohmic contact electrode on the n-type semiconductor clad layer and passivating a side surface of the semiconductor multilayer light emitting structure; And (f) cutting the resultant of step (e) into a single chip; In the step (f), when the thickness of the heat sink layer of the second wafer is greater than 80 micrometers or less than 500 micrometers, the sacrificial layer is wet etched with a wet etching solution to separate and remove the selected supporting substrate, and then a single chip. Cut to In the step (f), if the thickness of the heat sink layer of the second wafer is greater than 30 micrometers or less than 80 micrometers, the sacrificial layer is wet etched with a wet etching solution to separate and remove the selected supporting substrate, and 3. A method of manufacturing a semiconductor light emitting device having a vertical structure comprising bonding a third support substrate to the heat sink layer using a bonding layer and cutting the same into a single chip. delete 16. The method of claim 15, The third support substrate is made of a single crystal or polycrystalline wafer selected from Si, Ge, SiGe, ZnO, GaN, AlGaN or GaAs, which are thermal and electrical conductors, or Mo, Cu, Ni, Nb, Ta, Ti, Au, Ag, A method of manufacturing a semiconductor light emitting device having a vertical structure, characterized in that the metal, alloy, or solid solution foil selected from Cr, NiCr, CuW, CuMo, or NiW. 16. The method of claim 15, Each of the n-type semiconductor cladding layer, the light emitting active layer, and the p-type semiconductor cladding layer has a composition of In _x (Ga _y Al _1-y ) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y> 0). A method of manufacturing a semiconductor light emitting device having a vertical structure comprising a single crystal having. delete 16. The method of claim 15, The step (d) may be performed by a laser lift-off method of irradiating a laser beam onto the first growth substrate, or by wet etching using a mechanical-mechanical polishing and wet etching solution. A method of manufacturing a semiconductor light emitting device having a vertical structure. 16. The method of claim 15, The heat sink layer is made of a metal selected from Cu, Ni, Ag, Mo, Al, Au, W, Ti, Cr, Ta, Al, Pd, Pt or Si or an alloy containing at least one of them. Method of manufacturing a semiconductor light emitting device having a vertical structure. delete 16. The method of claim 15, The first ohmic contact electrode may be Al, Ti, Cr, Ta, Ag, Al, Rh, Pt, Au, Cu, Ni, Pd, In, La, Sn, Si, Ge, Zn, Mg, NiCr, PdCr, CrPt, NiTi, TiN, CrN, SiC, SiCN, InN, AlGaN, InGaN, rare earth metals and alloys, metallic silicides, semiconducting silicides, carbonnanotube networks, CNTNs, transparent conducting oxides TCO) and a transparent conducting nitride (TCN) is formed of a material comprising at least one of a semiconductor light emitting device having a vertical structure. 16. The method of claim 15, The method of claim 1, wherein the first bonding layer of the first wafer comprises a diffusion barrier layer. delete

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