KR20090115903A - Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods - Google Patents

Abstract

PURPOSE: A group 3 nitride based semiconductor light emitting diode device and a manufacturing method thereof are provided to improve the performance of the LED by promoting horizontal current spreading. CONSTITUTION: An n type nitride based clad layer(301), a nitride based active layer(401), and a current spreading layer(601) are successively stacked in the lower side of an n type electrode structure(303). A p type electrode structure is comprised of a current blocking structure(11) and an electrode thin film layer(12). A wafer bonding layer(901) is formed in the lower side of the p type electrode structure. A heat sink support is formed in the lower side of the wafer bonding layer. A p type ohmic contact electrode pad is formed in the lower side of the heat sink support. The current spreading layer forms the ohmic contact interface with the p type nitride based clad layer.

Description

Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods

The present invention relates to a vertical structure using an epitaxial group 3 nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). A group III-nitride semiconductor light emitting diode device having a structure and a method of manufacturing the same. More specifically, a growth substrate wafer in which a light emitting structure for a group III-nitride semiconductor light emitting diode device including a p-type electrode structure is grown on a growth substrate and a sandwich structure wafer developed by the present inventors. A combination of a wafer to wafer bonding process and a lift-off process is provided to manufacture a vertical group III-nitride semiconductor light emitting diode device and a method of manufacturing the same.

Recently, a light emitting diode (LED) device using a Group III nitride-based semiconductor single crystal is an In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1 used as a nitride-based active layer). The material system has a wide range of energy band gaps. In particular, according to the composition of In is known as a material capable of emitting light in all areas of visible light, and according to the composition of Al can generate ultraviolet light, which is an ultra-short wavelength region, and the light emitting diodes manufactured using the same are used for display plates, display devices, Development of high quality light emitting diodes is very important in the application area of backlight, medical light source including white light source and so on, and the range of application is gradually expanded and increased.

FIG. 27 is a schematic cross-sectional view of a horizontal group III-nitride semiconductor light emitting diode device according to the related art, and includes a buffer layer 20 and an n-type nitride cladding layer 30 on the sapphire growth substrate 10. The multilayer structure for the light emitting diode device including the nitride active layer 40 and the p-type nitride cladding layer 50 is sequentially grown, and the n-type nitride cladding layer is formed in the p-type nitride cladding layer 50 ( 30) A portion of the region is etched, and the transparent p-type ohmic contact electrode 60 and the electrode pad 70 are sequentially formed on the p-type nitride cladding layer 50. An n-type ohmic contact electrode structure 80 is formed on the n-type nitride cladding layer 30 that is etched and exposed to the air.

The group III-nitride semiconductor light emitting diode device shown in FIG. 27 is bonded to a mold cup by applying an adhesive to the back of the sapphire growth substrate, and one lead frame is connected to the n-type ohmic contact electrode structure 80. At the same time, another lead frame and p-type electrode pad 70 are assembled by wire connection. In the LED device driving as described above, when an external voltage is applied through the n and p electrode pads, electrons and holes are formed from the n-type nitride cladding layer 30 and the p-type nitride cladding layer 50, respectively. Charge carriers flow into the nitride based active layer 40 and light is emitted while recombination of the two charge carriers occurs. Light emitted from the nitride-based active layer 40 is emitted in all directions of the nitride-based active layer 40 and the light advanced above is emitted to the outside through the p-type nitride-based cladding layer 50, and upwards. Part of the advanced light proceeds downward and exits to the outside of the light emitting diode device, and part of the light exits below the sapphire growth substrate 10 to be absorbed or reflected by the solder used in assembling the light emitting diode device and then proceeds upward again. It may be absorbed again inside the multilayer structure for a light emitting diode device including the nitride based active layer 40, and may escape to the outside through the nitride based active layer 40.

However, since the group III-nitride semiconductor light emitting diode device is a horizontal structure, and is manufactured on the sapphire growth substrate 10 having low thermal conductivity and electrical insulation, a large amount of heat inevitably generated when driving the light emitting diode device is smoothly emitted. There is a difficulty in reducing the overall characteristics of the device.

In addition, as shown in FIG. 27, in order to form two ohmic contact electrodes and electrode pads, a portion of the nitride-based active layer 40 needs to be removed, thereby reducing the light emitting area, thereby making it difficult to realize a high quality light emitting diode device. As a result, the number of chips in the same size wafer is reduced, which leads to a price competitiveness.

In addition, after the manufacturing process of the light emitting diode device on the wafer is completed, lapping, polishing, scribing, sawing, and braking to separate into a single light emitting diode device Due to the mismatch between the sapphire growth substrate 10 and the cleavage plane of the group III-nitride semiconductor during mechanical processes such as breaking, the defect rate is high and the overall product yield is deteriorated.

Recently, in order to solve the problem of the group III-nitride-based semiconductor LED device having a horizontal structure, the growth substrate 10 is removed so that two ohmic contact electrodes and electrode pads face the upper and lower parts of the LED device. The vertical structure group III-nitride semiconductor light emitting diode device, which is positioned in such a way that an externally applied current flows in one direction and improves luminous efficiency, is disclosed in many documents (US Patent, US 6,071,795, US 6,335,263, US 20060189098). have.

28 is a cross-sectional view showing a general manufacturing process of a vertical group III-nitride semiconductor light emitting diode device as an example of the prior art. As shown in FIG. 28, a general vertical structure light emitting diode device manufacturing method is formed on the sapphire growth substrate 10 using MOCVD or MBE growth equipment to form a multi-layer structure for the light emitting diode device, and then exists in the uppermost layer of the multi-layer structure. After the reflective p-type ohmic contact electrode structure 90 is formed on the p-type nitride cladding layer 50, the support substrate wafer prepared separately from the growth substrate wafer is solder bonded at a temperature of less than 300 ° C. Next, the vertical growth light emitting diode device is manufactured by removing the sapphire growth substrate.

Referring to FIG. 28, the undoped GaN or InGaN buffer layer 20 and the n-type nitride cladding layer 30 are first formed by using MOCVD growth equipment on the sapphire substrate 10. , A multi-layer structure in which the nitride-based active layer 40 formed of InGaN and GaN and the p-type nitride cladding layer 50 were sequentially grown (FIG. 28A), and then the upper portion of the p-type nitride cladding layer 50 was formed. The reflective p-type ohmic contact electrode structure 90 and the soldering reaction prevention layer 100 are sequentially formed to prepare a growth substrate wafer (FIG. 28B). Then, as shown in FIG. 28C, two ohmic contact electrodes 120 and 130 are formed on the upper and lower portions of the electrically conductive support substrate 110, and a soldering material for bonding the multilayer structure for the light emitting diode device ( 140 is deposited to prepare a supporting substrate wafer. Then, the grown substrate wafer The soldering material diffusion barrier layer 100 and the soldering material 140 of the substrate wafer are brought into contact with each other as shown in FIG. Subsequently, the sapphire growth substrate 10 is irradiated with a strong energy laser on the back surface of the sapphire growth substrate 10, which is a rear surface of the growth substrate wafer on which the unified plurality of light emitting diode elements are manufactured. The undoped GaN or InGaN buffer layer 20, which was separated ( laser lift off ; LLO ) and damaged by the laser, was brought to the front until the n-type nitride clad layer 30 was exposed using a dry etching process. Etching (FIG. 28E) and forming an n-type ohmic contact electrode structure 80 on the n-type nitride cladding layer 30 corresponding to the plurality of light emitting diode elements (FIG. 28F). Finally, the plurality of light emitting diode devices and the conductive support substrate 110 may be mechanically wrapped, polished, scribed, sawed, and broken. The cleavage process is performed to separate the united light emitting diode device (FIG. 28G).

However, the conventional vertical structure light emitting diode device manufacturing process technology has a number of problems as described below, it is difficult to secure a large number of unified vertical structure light emitting diode devices safely. That is, since the soldering bonding is performed in a low temperature range, a subsequent high temperature process cannot be performed at a higher temperature than the soldering bonding temperature, and it is difficult to implement a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are bonded between the wafers (dissimilar wafer), the thermal stress is generated during the bonding, which has a fatal effect on the reliability of the light emitting diode device.

More recently, in order to solve the problems occurring in the vertical group III-nitride semiconductor light emitting diode device manufactured by the soldering bond, a metal thick film such as Cu, Ni, or the like instead of the electrically conductive supporting substrate formed by the soldering bond. Is developed on the reflective p-type ohmic contact electrode structure 90 by an electroplating process, and is partially used for product production. However, subsequent processes generated in the vertical structured light emitting diode manufacturing process manufactured in conjunction with the electroplating process, that is, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, and braking are Problems such as deterioration of the device and occurrence of defects when it is done remain a problem to be solved.

The present invention has been made in recognition of the above-mentioned problems, and is a group represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) on the growth substrate. A growth substrate wafer formed with a multilayer structure for a light emitting diode device comprising a thin film layer for a group III nitride semiconductor light emitting diode device and an effective current blocking structure, and a wafer having a sandwich structure developed by the present inventors The present invention provides a method for manufacturing a group III-nitride semiconductor light emitting diode device having a vertical structure by combining a wafer to wafer bonding process and a lift-off process.

More specifically, a growth substrate wafer having a multi-layer structure for group III nitride-based semiconductor light emitting diode devices formed on an upper surface of the growth substrate, a dissimilar support substrate as a heatsink support, and a temporary substrate wafer After the wafer bonding is performed in a sandwich structure, the growth substrate and the temporary substrate are removed through a substrate lift-off process to provide a group III-nitride semiconductor light emitting diode device having a vertical structure and a method of manufacturing the same. .

In order to achieve the above object,

n-type electrode structure; A multi-layer structure for group III nitride semiconductor light emitting diode devices in which an n-type nitride cladding layer, a nitride-based active layer, a p-type nitride cladding layer, and a current spreading layer are sequentially stacked on the lower surface of the n-type electrode structure; A p-type electrode structure including a current blocking structure in a trench shape and an electrode thin film layer on a top of the multilayer structure for a light emitting diode device; A wafer bonding layer formed on the bottom surface of the p-type electrode structure; A heatsink support formed on the bottom surface of the wafer bonding layer; And a p-type ohmic contact electrode pad formed on the heat sink supporter.

The current spreading layer located on the multi-layer structure for the group III-nitride semiconductor light emitting diode device forms an ohmic contacting interface with the p-type nitride cladding layer to inject current in a vertical direction. In addition to having low sheet resistance, it is an electrically conductive thin film with excellent current spreading in the horizontal direction. In particular, the current spreading layer is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is preferably indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or oxidized nickel-gold (NiO-Au).

The current blocking structure, which is a part of the p-type electrode structure, is etched in a vertical direction at least deeper than the thickness of the current spreading layer so that a portion of the p-type nitride cladding layer is exposed to the air. ) Has a form.

The electrode thin film layer, which is a part of the p-type electrode structure, forms an electrically conductive material film through partial or complete deposition on the current spreading layer and the p-type nitride cladding layer exposed to the atmosphere.

The electroconductive electrode thin film layer in contact with the p-type nitride cladding layer of the multilayer structure for the light emitting diode device forms a schottky contacting interface, while in contact with the current spreading layer of the multilayer structure for the light emitting diode device. The electrically conductive electrode thin film layer forms an ohmic contacting interface.

The p-type electrode structure including the current blocking structure prevents unidirectional vertical current injection when driving a vertical light emitting diode device, and spreads horizontal current spreading in a horizontal direction. By improving the overall performance of the LED.

In addition to preventing current concentration in the vertical direction, the p-type electrode structure has a multi-layer that can play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. It is preferable to include a separate electrode thin film layer having a structure.

In order to achieve the above object,

n-type electrode structure; Multi-layer structure for group III nitride semiconductor light emitting diode device in which an n-type nitride cladding layer, a nitride-based active layer, a p-type nitride cladding layer, a surface modification layer, and a current spreading layer are sequentially stacked on the lower surface of the n-type electrode structure ; A p-type electrode structure including a current blocking structure in a trench shape and an electrode thin film layer on a top of the multilayer structure for a light emitting diode device; A wafer bonding layer formed on the bottom surface of the p-type electrode structure; A heatsink support formed on the bottom surface of the wafer bonding layer; And a p-type ohmic contact electrode pad formed on a bottom surface of the heat sink supporter.

The surface modification layer on the multi-layer structure for the group III-nitride semiconductor light emitting diode device has a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and p-type InGaN. , Group III-nitride based on AlInN, InN, AlGaN, or nitrogen-polar surface (nitrogen-polar surface). In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing group 2, 3, or 4 element elements.

The current spreading layer on the multi-layer structure for the group III-nitride semiconductor light emitting diode device forms an ohmic contacting interface with the surface modification layer to perform current injection in the vertical direction. In addition, it is an electrically conductive thin film having low sheet resistance and excellent current spreading in the horizontal direction. In particular, the current spreading layer is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is preferably indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or oxidized nickel-gold (NiO-Au).

The current blocking structure, which is a part of the p-type electrode structure, is etched in a vertical direction deeper than at least the thickness of the current spreading and the thickness of the surface modification layer, thereby waiting for a portion of the p-type nitride cladding layer. in the form of trenches exposed to air.

An electrode thin film layer, which is a part of the p-type electrode structure, is formed by partial or complete deposition of an electrically conductive material film on the current spreading layer, the surface modification layer, and the p-type nitride cladding layer exposed to the atmosphere.

The electrically conductive electrode thin film layer in contact with the p-type nitride cladding layer of the multilayer structure for the light emitting diode device forms a schottky contacting interface, whereas the current spreading layer and the surface of the multilayer structure for the light emitting diode device are constructed. The electrically conductive electrode thin film layer in contact with the modified layer forms an ohmic contacting interface.

The p-type electrode structure including the current blocking structure prevents unidirectional vertical current injection when driving a vertical light emitting diode device, and spreads horizontal current spreading in a horizontal direction. By improving the overall performance of the LED.

In addition to preventing current concentration in the vertical direction, the p-type electrode structure is multi-layered to play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. It is preferable to include a separate electrode thin film layer (layer) structure.

In a preferred aspect for achieving the above object, the present invention provides a method of manufacturing a vertical light emitting diode device using a multi-layer structure for group III nitride semiconductor light emitting diode device,

A growth substrate wafer in which a multi-layer structure for group III nitride light-emitting diode devices consisting of an n-type nitride cladding layer including a buffer layer, a nitride-based active layer, a p-type nitride cladding layer, and a current spreading layer is sequentially grown on the growth substrate. Preparing a; Forming a trench blocking current blocking structure in the current spreading layer using an etching process; Grafting the current blocking structure to form a p-type electrode structure; Forming a wafer bonding layer on an upper surface of the p-type electrode structure; Stacking a wafer bonding layer on the upper and lower surfaces of the heterogeneous supporting substrate which is a heat sink support; Stacking a sacrificial separation layer and a wafer bonding layer on an upper surface of the temporary substrate; Bonding a wafer to a sandwich structure in which the growth substrate and the temporary substrate are positioned on upper and lower surfaces of the heterogeneous supporting substrate to form a composite; Lifting off the growth substrate and the temporary substrate in the wafer-bonded composite with the sandwich structure, respectively; Forming surface irregularities and an n-type electrode structure on the n-type nitride-based cladding layer upper surface of the composite from which the growth substrate is removed; And forming a p-type ohmic contact electrode pad on a rear surface of the heterogeneous supporting substrate of the composite from which the temporary substrate is removed.

The current blocking structure of the p-type electrode structure formed on the upper surface of the current spreading layer is for maximizing horizontal current spreading in the horizontal direction when the device is driven, and is present on the n-type nitride cladding layer. The same dimensions and shapes as the n-type electrode structure are arranged and faced oppositely at the same position in the vertical direction.

The sacrificial separation layer of the temporary substrate wafer is made of a material that is advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The heterogeneous support substrate, which is the heat-sink support, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The wafer bonding layer on the growth substrate, the heterogeneous support substrate, and the temporary substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The process of separating the growth substrate and the support substrate uses a thermal-chemical decomposition reaction by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or photon beam having a strong energy.

As well as the electrical and optical properties of the Group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are performed before and after each step as a means for enhancing the mechanical bonding between the layers. It is preferable to introduce.

In a preferred aspect for achieving the above object, the present invention provides a method of manufacturing a vertical light emitting diode device using a multi-layer structure for group III nitride semiconductor light emitting diode device,

A multi-layer structure for group III nitride light-emitting diode devices consisting of an n-type nitride cladding layer including a buffer layer, a nitride-based active layer, a p-type nitride-based cladding layer, a surface modification layer, and a current spreading layer is sequentially grown on the growth substrate. Preparing a grown substrate wafer; Forming a trench blocking current blocking structure in the current spreading layer and the surface modification layer by using an etching process; Grafting the current blocking structure to form a p-type electrode structure; Forming a wafer bonding layer on an upper surface of the p-type electrode structure; Stacking a wafer bonding layer on the upper and lower surfaces of the heterogeneous supporting substrate which is a heat sink support; Stacking a sacrificial separation layer and a wafer bonding layer on an upper surface of the temporary substrate; Bonding a wafer to a sandwich structure in which the growth substrate and the temporary substrate are positioned on upper and lower surfaces of the heterogeneous supporting substrate to form a composite; Lifting off the growth substrate and the temporary substrate in the wafer-bonded composite with the sandwich structure, respectively; Forming surface irregularities and an n-type electrode structure on the n-type nitride-based cladding layer upper surface of the composite from which the growth substrate is removed; And forming a p-type ohmic contact electrode pad on a rear surface of the heterogeneous supporting substrate of the composite from which the temporary substrate is removed.

The current blocking structure of the p-type electrode structure formed on the current spreading layer and the surface modification layer is to maximize horizontal current spreading in the horizontal direction when the device is driven, and the upper portion of the n-type nitride cladding layer The same dimension and shape as the n-type electrode structure present at the same time, and at the same time in the vertical position to face opposite.

The sacrificial separation layer of the temporary substrate wafer is made of a material that is advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The heterogeneous support substrate, which is the heat-sink support, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The wafer bonding layer on the growth substrate, the heterogeneous support substrate, and the temporary substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The process of separating the growth substrate and the support substrate uses a thermal-chemical decomposition reaction by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or photon beam having a strong energy.

In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. It is desirable to.

As described above, the group III-nitride-based semiconductor light emitting diode manufactured by the present invention includes a p-type electrode structure having a current blocking structure, so that the current in one vertical direction when driving the vertical light emitting diode device is generated. It can improve the overall performance of the LED by preventing vertical current injection and by promoting horizontal current spreading.

In addition, according to the method of manufacturing a vertical group III-nitride semiconductor light emitting diode according to the present invention, it is possible to manufacture without damaging the wafer bending during the wafer-to-wafer bonding and the multilayer structure of the unified light emitting diode device. As a result, the processability and yield of the fab process can be improved.

Hereinafter, with reference to the accompanying drawings, it will be described in more detail with respect to the light emitting diode and the device manufacturing a group III nitride-based semiconductor optoelectronic device manufactured according to the present invention.

1 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a first embodiment according to the present invention.

As shown, the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride-based cladding layer 501, the current spreading layer 601, and the current are formed on the lower surface of the n-type electrode structure 303. The p-type electrode structure 701 including the blocking structure 11 and the electrode thin film layer 12, the wafer bonding layers 901 and 902, the heat sink supporter 302, and the p-type ohmic contact electrode pad 403 are included. The light emitting diode (1) element which is a light emitting element of the vertical structure is formed.

In more detail, the unevenness 203 is formed on the surface of the n-type nitride cladding layer 301, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 401 to the outside. An n-type electrode structure 303 is formed on the n-type nitride cladding layer 301 as an ohmic contacting interface.

 Although not shown, a passivation film for protecting the nitride based active layer 401 exposed through the side surface is formed on the side surface of the light emitting diode device 1 of the vertical structure. At this time, the passivation film is formed of an electrically insulating oxide (oxide), nitride (nitride), fluoride (fluoride), specifically formed of any one selected from the group consisting of SiNx, SiO2, Al2O3.

A current spreading layer 601 is formed on the bottom surface of the p-type nitride cladding layer 501 of the light emitting diode (1) element on which the passivation film is formed, and a current blocking structure is formed on the bottom surface of the current spreading layer 601. A p-type electrode structure 701 composed of 11) and an electrode thin film layer 12 is formed.

The current spreading layer 601 is formed through a subsequent process of material deposition and heat treatment after growing the n-type nitride based cladding layer 301, the nitride based active layer 401, and the p-type nitride based cladding layer 501. In addition, the current spreading layer 601 may form an ohmic contacting interface with the p-type nitride cladding layer to perform current injecting in the vertical direction as well as have low sheet resistance. It is an electrically conductive thin film with excellent current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

The p-type electrode structure 701 includes a current blocking structure 11 and an electrode thin film layer 12, and the current blocking structure 11 is etched deeper than the thickness of the current spreading layer 601. A portion of the p-type nitride cladding layer 501 has a trench shape exposed to the air, and the p-type nitride cladding layer 501 exposed to the current and the current spreading layer 601 is provided. Is formed by depositing an electrically conductive electrode thin film layer 12).

Referring to FIG. 1, the electrode thin film layer 12 constituting the p-type electrode structure 701 is in contact with the p-type nitride cladding layer 501 and the current spreading layer 601 simultaneously. In this case, the electrode thin film layers 12a, 12b, and 12e in contact with the p-type nitride cladding layer 501 form a schottky contacting interface, while the electrical contact with the current spreading layer 601 is performed. The conductive material films 12c and 12d form an ohmic contacting interface.

Meanwhile, some regions 11 of the current blocking structure 701 are formed of air or an electrically insulating material.

The p-type electrode structure 701 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, preventing diffusion of a material, improving adhesion of a material, or preventing oxidation of a material. Formed.

A material diffusion barrier layer (not shown) may be separately interposed between the p-type electrode structure 701 and the wafer bonding layer 901 to prevent material diffusion movement occurring during the fabrication of a light emitting diode device having a vertical structure. Should.

The material constituting the material diffusion barrier layer (not shown) is determined according to the type of material constituting the p-type electrode structure 701 and the wafer bonding layer 901, but, for example, Pt, Pd, Cu, It is formed of any one selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, and metallic silicide.

The wafer bonding layers 901 and 902 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The heterogeneous supporting substrate, which is the heat sink support 302, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The p-type electrode structure 701 is a material that prevents diffusion of materials, improves bonding and bonding between materials, as well as preventing current concentration in the vertical direction and reflecting light. It is preferable to include a separate thin film layer that can play an anti-oxidation role.

In particular, the vertical light emitting diode 1 device according to the embodiment of the present invention simultaneously uses the current spreading layer 601 formed on the p-type nitride-based cladding layer 501 to simultaneously produce a schottky contact interface and an ohmic contact interface. Since the p-type electrode structure 701 is provided, the external light emission efficiency can be increased by improving current spreading in the horizontal direction.

FIG. 2 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device having a vertical structure as a second embodiment according to the present invention.

As shown, the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride-based cladding layer 501, the current spreading layer 601, and the current are formed on the lower surface of the n-type electrode structure 303. The p-type electrode structure 801 composed of the blocking structure 11 and the electrode thin film layer 12, the wafer bonding layers 901 and 902, the heat sink supporter 302, and the p-type ohmic contact electrode pad 403 are disposed. A light emitting diode 2 element, which is a light emitting element having a vertical structure, is formed.

In more detail, the unevenness 203 is formed on the surface of the n-type nitride cladding layer 301, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 401 to the outside. An n-type electrode structure 303 is formed on the n-type nitride cladding layer 301 as an ohmic contacting interface.

Although not shown, a passivation film for protecting the nitride based active layer 401 exposed through the side surface is formed on the side surface of the light emitting diode device 2 of the vertical structure. At this time, the passivation film is formed of an electrically insulating oxide (oxide), nitride (nitride), fluoride (fluoride), specifically formed of any one selected from the group consisting of SiNx, SiO2, Al2O3.

A current spreading layer 601 is formed on a lower surface of the p-type nitride cladding layer 501 of the light emitting diode 2 device on which the passivation film is formed, and a current blocking structure is formed on the bottom surface of the current spreading layer 601. A p-type electrode structure 801 consisting of 11) and an electrode thin film layer 12 is formed.

The current spreading layer 601 is formed through a subsequent process of material deposition and heat treatment after growing the n-type nitride based cladding layer 301, the nitride based active layer 401, and the p-type nitride based cladding layer 501. In addition, the current spreading layer 601 forms an ohmic contacting interface with the p-type nitride cladding layer to enable current injecting in the vertical direction, and also has a low sheet resistance. It is an electrically conductive thin film with excellent current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

The p-type electrode structure 801 is composed of a current blocking structure 11 and the electrode thin film layer 12, the current blocking structure 11 is etched deeper than the thickness of the current spreading layer 601 A portion of the p-type nitride cladding layer 501 has a trench shape exposed to the air, and the p-type nitride cladding layer 501 exposed to the current and the current spreading layer 601 is provided. Is formed by depositing an electrically conductive electrode thin film layer 12).

2, the electrode thin film layer 12 constituting the p-type electrode structure 801 is in contact with the p-type nitride cladding layer 501 and the current spreading layer 601 simultaneously. In this case, the electrode thin film layers 12a, 12b, and 12e in contact with the p-type nitride cladding layer 501 form a schottky contacting interface, while the electrical contact with the current spreading layer 601 is performed. The conductive material films 12c and 12d form an ohmic contacting interface.

Meanwhile, some regions 12 of the current blocking structure 801 are formed of an electrically conductive material.

The p-type electrode structure 801 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, preventing diffusion of a material, improving adhesion of a material, or preventing oxidation of a material. Formed.

A material diffusion barrier layer (not shown) may be separately interposed between the p-type electrode structure 801 and the wafer bonding layer 901 to prevent material diffusion movement occurring during the fabrication of a light emitting diode device having a vertical structure. Should.

The material constituting the material diffusion barrier layer (not shown) is determined according to the type of the material constituting the p-type electrode structure 801 and the wafer bonding layer 901, but, for example, Pt, Pd, Cu, It is formed of any one selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, and metallic silicide.

The wafer bonding layers 901 and 902 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The heterogeneous supporting substrate, which is the heat sink support 302, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The p-type electrode structure 801 has a role of preventing diffusion of materials, improving binding and bonding between materials, as well as preventing current concentration in the vertical direction and reflecting light. It is preferable to include a separate thin film layer that can play an anti-oxidation role.

In particular, the vertical light emitting diode device 2 according to the embodiment of the present invention simultaneously uses the current spreading layer 601 formed on the p-type nitride cladding layer 501 to simultaneously produce a schottky contact interface and an ohmic contact interface. Since the p-type electrode structure 801 is provided, the current spreading in the horizontal direction can be improved to increase the external light emitting efficiency.

3 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a third embodiment according to the present invention.

As shown, the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride-based cladding layer 501, the surface modification layer 502, and the current soup are formed on the lower surface of the n-type electrode structure 303. P-type electrode structure 702 composed of redding layer 601, current blocking structure 11 and electrode thin film layer 12, wafer bonding layers 901, 902, heatsink support 302, and p-type ohmic contact A light emitting diode 3 element, which is a vertical light emitting element including an electrode pad 403, is formed.

In more detail, the unevenness 203 is formed on the surface of the n-type nitride cladding layer 301, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 401 to the outside. An n-type electrode structure 303 is formed on the n-type nitride cladding layer 301 as an ohmic contacting interface.

Although not shown, a passivation film for protecting the nitride based active layer 401 exposed through the side surface is formed on the side surface of the light emitting diode 3 of the vertical structure. At this time, the passivation film is formed of an electrically insulating oxide (oxide), nitride (nitride), fluoride (fluoride), specifically formed of any one selected from the group consisting of SiNx, SiO2, Al2O3.

A surface modification layer 502 and a current spreading layer 601 are continuously formed on the bottom surface of the p-type nitride cladding layer 501 of the light emitting diode 3 element on which the passivation film is formed, and the surface modification layer 502 ) And a p-type electrode structure 702 formed of a current blocking structure 11 and an electrode thin film layer 12 is formed on the bottom surface of the current spreading layer 601.

The surface modification layer 502 disposed on the p-type nitride cladding layer 501 is continuously formed in a growth equipment chamber using MOCVD and MBE, which are single crystal group III-nitride semiconductor growth equipment. Well-known superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or surface formed with nitrogen polarity (nitrogen-polar surface It is formed of any one selected from the group consisting of group III nitride system having a).

In particular, the surface modification layer 502 of the superlattice structure is preferably made of nitride or carbon nitride containing group 2, 3, or 4 elements.

The current spreading layer 601 is formed by growing the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride cladding layer 501, and the surface modification layer 502. The current spreading layer 601 may be formed through a subsequent process of forming a ohmic contacting interface with the surface modification layer 502 to perform current injection in a vertical direction. In addition, it is an electrically conductive thin film having low sheet resistance and excellent in current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

The p-type electrode structure 702 is composed of a current blocking structure 11 and an electrode thin film layer 12, the current blocking structure 11 is the thickness of the current spreading layer 601 and the surface modification layer ( 502) a portion of the p-type nitride cladding layer 501 is etched to be deeper than the sum of the thicknesses to form a trench, and the current spreading layer 601 and the surface of the p-type nitride cladding layer 501 are exposed to air. The conductive thin film layer 12 is formed by depositing the conductive layer 502 and the p-type nitride cladding layer 501 exposed to the air.

Referring to FIG. 3, the electrode thin film layer 12 constituting the p-type electrode structure 702 includes the p-type nitride cladding layer 501, the surface modification layer 502, and the current spreading layer 601. ) At the same time. In this case, the electrode thin film layers 12a, 12b, and 12g in contact with the p-type nitride cladding layer 501 form a schottky contacting interface, while the surface modification layer 502 and the current soup are formed. The electrically conductive material films 12c, 12d, 12e, and 12f in contact with the reading layer 601 form an ohmic contacting interface.

Meanwhile, some regions 11 of the current blocking structure 702 are formed of air or an electrically insulating material.

The p-type electrode structure 702 is a multi-layer of a metal, an alloy, or a solid solution that can play a role of high reflection of light, preventing diffusion of a material, improving adhesion of a material, or preventing oxidation of a material. Formed.

A material diffusion barrier layer (not shown) may be separately interposed between the p-type electrode structure 702 and the wafer bonding layer 901 to prevent material diffusion movement occurring during the manufacture of the light emitting diode device having a vertical structure. Should.

The material constituting the material diffusion barrier layer (not shown) is determined according to the type of material constituting the p-type electrode structure 702 and the wafer bonding layer 901, but, for example, Pt, Pd, Cu, It is formed of any one selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, and metallic silicide.

The wafer bonding layers 901 and 902 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The heterogeneous supporting substrate, which is the heat sink support 302, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The p-type electrode structure 702 is a material that prevents diffusion of materials, improves binding and bonding between materials, as well as preventing current concentration in the vertical direction and reflecting light. It is preferable to include a separate thin film layer that can play an anti-oxidation role.

In particular, in the vertical light emitting diode device 3 according to the embodiment of the present invention, the surface modification layer 502 and the current spreading layer 601 formed on the p-type nitride-based cladding layer 501 are used for the schottky contact. Since the p-type electrode structure 702 having an interface and an ohmic contact interface is included at the same time, external light emission efficiency can be increased by improving current spreading in the horizontal direction.

FIG. 4 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device having a vertical structure as a fourth embodiment according to the present invention.

As shown, the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride-based cladding layer 501, the surface modification layer 502, and the current soup are formed on the lower surface of the n-type electrode structure 303. P-type electrode structure 802 composed of redding layer 601, current blocking structure 11 and electrode thin film layer 12, wafer bonding layers 901, 902, heatsink support 302, and p-type ohmic contact A light emitting diode 4 element, which is a vertical light emitting element including the tip electrode pad 403, is formed.

In more detail, the unevenness 203 is formed on the surface of the n-type nitride cladding layer 301, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 401 to the outside. An n-type electrode structure 303 is formed on the n-type nitride cladding layer 301 as an ohmic contacting interface.

Although not shown, a passivation film for protecting the nitride based active layer 401 exposed through the side surface is formed on the side surface of the light emitting diode 4 of the vertical structure. At this time, the passivation film is formed of an electrically insulating oxide (oxide), nitride (nitride), fluoride (fluoride), specifically formed of any one selected from the group consisting of SiNx, SiO2, Al2O3.

A surface modification layer 502 and a current spreading layer 601 are continuously formed on the bottom surface of the p-type nitride cladding layer 501 of the light emitting diode 4 element on which the passivation film is formed, and the surface modification layer 502 ) And a p-type electrode structure 802 composed of a current blocking structure 11 and an electrode thin film layer 12 is formed on the lower surface of the current spreading layer 601.

The surface modification layer 502 located on the upper surface of the p-type nitride cladding layer 501 is continuously formed in a growth equipment chamber using MOCVD and MBE, which are single crystal group III-nitride semiconductor growth equipment. Well-known superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or surface formed with nitrogen polarity (nitrogen-polar surface It is formed of any one selected from the group consisting of group III nitride system having a).

In particular, the surface modification layer 502 of the superlattice structure is preferably made of nitride or carbon nitride containing group 2, 3, or 4 elements.

The current spreading layer 601 is formed by growing the n-type nitride cladding layer 301, the nitride-based active layer 401, the p-type nitride cladding layer 501, and the surface modification layer 502. The current spreading layer 601 may be formed through a subsequent process of forming a ohmic contacting interface with the surface modification layer 502 to perform current injection in a vertical direction. In addition, it is an electrically conductive thin film having low sheet resistance and excellent in current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

The p-type electrode structure 802 is composed of a current blocking structure 11 and an electrode thin film layer 12, the current blocking structure 11 is a thickness of the current spreading layer 601 and a surface modification layer ( 502) a portion of the p-type nitride cladding layer 501 is etched deeper than the sum of the thicknesses to form a trench, and the current spreading layer 601 and the surface of the p-type nitride cladding layer 501 are exposed to the air. The conductive thin film layer 12 is formed by depositing the conductive layer 502 and the p-type nitride cladding layer 501 exposed to the air.

3, the electrode thin film layer 12 constituting the p-type electrode structure 802 includes the p-type nitride cladding layer 501, the surface modification layer 502, and the current spreading layer 601. ) At the same time. At this time, the electrode thin film layers 12a, 12b, and 12g in contact with the p-type nitride cladding layer 501 form a schottky contacting interface, whereas the current spreading with the surface modification layer 502 is performed. Electroconductive material films 12c, 12d, 12e, and 12f in contact with layer 601 form an ohmic contacting interface.

Meanwhile, some regions 11 of the current blocking structure 802 are formed of an electrically conductive material.

The p-type electrode structure 802 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, diffusion of a material, improvement of adhesion of a material, or oxidation of a material. Formed.

A material diffusion barrier layer (not shown) may be separately interposed between the p-type electrode structure 802 and the wafer bonding layer 901 to prevent material diffusion movement occurring during the fabrication of a light emitting diode device having a vertical structure. Should.

The material constituting the material diffusion barrier layer (not shown) is determined according to the type of the material constituting the p-type electrode structure 802 and the wafer bonding layer 901, but, for example, Pt, Pd, Cu, It is formed of any one selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, and metallic silicide.

The wafer bonding layers 901 and 902 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

The heterogeneous supporting substrate, which is the heat sink support 302, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. It is formed of any one selected from the group consisting of foils.

The p-type electrode structure 802 is a material that prevents diffusion of materials, improves bonding and bonding between materials, as well as preventing current concentration in the vertical direction and reflecting light. It is preferable to include a separate thin film layer that can play an anti-oxidation role.

In particular, the vertical light emitting diode device 4 according to the embodiment of the present invention uses the surface modification layer 502 and the current spreading layer 601 formed on the p-type nitride cladding layer 501 to be a schottky contact. It includes a p-type electrode structure 802 having an interface and an ohmic contact interface at the same time, it is possible to increase the external spreading efficiency by improving the current spread in the horizontal direction.

5 to 15 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

FIG. 5 is a cross-sectional view illustrating a growth substrate wafer in which a multi-layer structure for group III-nitride semiconductor light emitting diode devices is grown and stacked on a growth substrate.

Referring to FIG. 5, an n-type nitride cladding layer 301 made of an n-type conductive single crystal semiconductor material, a nitride-based active layer 401, and a p-type conductivity are formed on the growth substrate 101. And a p-type nitride cladding layer 501 and a current spreading layer 601 made of a single crystal semiconductor material. 5A, the n-type nitride layer-based cladding layer 301 may be formed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 401 may have a multi-quantum well structure. It may be composed of an undoped InGaN layer of quantum wells. In addition, the p-type nitride cladding layer 501 may be composed of a p-type conductive GaN layer and an AlGaN layer. Prior to growing the multilayer structure for the basic light emitting diode device composed of the group III-nitride-based semiconductor layer described above using a well-known process such as MOCVD or MBE single crystal growth method, the n-type nitride cladding layer 301 and Another buffer layer such as InGaN, AlN, SiC, SiCN, or GaN is formed on top of the growth surface, which is the uppermost layer of the growth substrate 101, to improve lattice matching with the growth surface, which is the uppermost layer of the growth substrate 101. It is preferable to further form 201).

Referring to FIG. 5B, the current spreading layer 601 disposed on the p-type nitride cladding layer 501 is grown on the p-type nitride cladding layer 501, and then deposited and heated. The current spreading layer 601 is formed through a subsequent process of -treatment, and the ohmic contacting interface is formed with the p-type nitride-based cladding layer 501 so that current is injected vertically. In addition to being able to inject, it has a low sheet resistance and is excellent in electric current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer 601 is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

FIG. 6 is a cross-sectional view of the growth substrate wafer after etching, which is a first process for forming a current blocking structure that is a part of a p-type electrode structure.

Referring to FIG. 6, the p-type nitride cladding layer 501 is exposed to air by etching deeper than the thickness h of the current spreading layer 601 in the vertical direction.

FIG. 7 is a cross-sectional view illustrating the deposition of an electrically conductive material film as a second process for forming an electrode thin film layer that is part of a p-type electrode structure of a growth substrate wafer.

Referring to FIG. 7, the p-type electrode structure 701 is formed by depositing an electrically conductive electrode thin film layer 12 on the p-type nitride cladding layer 501 and the current spreading layer 601 exposed to the air. To complete. In particular, the p-type electrode structure 701 may be divided into six regions, and the electrode thin film layers 12a, 12b, and 12e contacting the p-type nitride cladding layer 501 exposed to the atmosphere may have a schottky contacting interface. ), On the other hand, the electrode thin film layers 12c and 12d in contact with the current spreading layer 601 form an ohmic contacting interface.

In addition, the partial region 11 of the p-type electrode structure 701 may be formed of an oxide that is air or electrically insulating.

8 to 9 are cross-sectional views after forming a wafer bonding layer on the p-type electrode structure.

Referring to FIG. 8, an electrically conductive wafer bonding layer 901 is deposited on a portion of the p-type electrode structure 701. At this time, the wafer bonding layer 901 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. Can be formed. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

Referring to FIG. 9, an electrically conductive wafer bonding layer 901 is deposited on the entire region of the p-type electrode structure 701. At this time, the wafer bonding layer 901 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. Can be formed. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

10 is a cross-sectional view of preparing a heterogeneous supporting substrate wafer and a temporary substrate wafer, which are heat sink supports developed by the present inventors, respectively.

As shown in FIG. 10A, the hetero support substrate wafer is composed of a hetero support substrate 302 which is a heatsink support and two wafer bonding layers 902 and 903 formed on and under the hetero support substrate 302. .

The heterogeneous support substrate 302, which is a heatsink support of the heterogeneous support substrate wafer, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. The foil is selected first.

The wafer bonding layers 902 and 903 formed on the upper and lower surfaces of the hetero supporting substrate 302, which are heat sink supports of the hetero supporting substrate wafer, are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or higher. . At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

As shown in FIG. 10B, the temporary substrate wafer is composed of a temporary substrate 170, a sacrificial separation layer 180, and a wafer bonding layer 904.

The temporary substrate 170 of the temporary substrate wafer has optical transmittance of 70% (%) or more in the wavelength region of 500 nanometers (nm) or less, or the thermal expansion coefficient difference between the growth substrate 101 and 2 PPM ( ppm / ° C.) are preferred. In this case, the temporary substrate 170 may include sapphire (Al ₂ O ₃ ), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), and spinel. (spinel), lithium niobate (lithium niobate), neodymium gallate (neodymium gallate), gallium oxide (Ga ₂ O ₃ ) It is formed of any one selected from the group consisting of.

The sacrificial separation layer 180 of the temporary substrate wafer is made of a material advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The wafer bonding layer 904 of the temporary substrate wafer is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

FIG. 11 is a cross-sectional view of forming a composite by bonding wafers in a sandwich structure after aligning the wafer bonding layers on the upper and lower surfaces of the heterogeneous support substrate with the wafer bonding layers of the growth substrate and the temporary substrate, respectively.

Referring to FIG. 11, the wafer bonding layer 901 of the growth substrate wafer, the wafer bonding layer 902 of the upper surface of the heterogeneous supporting substrate wafer, the wafer bonding layer 903 of the lower surface of the heterogeneous supporting substrate wafer, and the temporary Each of the wafer bonding layers 904 of the substrate wafer are opposed to each other to form a composite 5 having a sandwich structure by a wafer bonding process.

The wafer bond is preferably formed by applying a predetermined hydrostatic pressure under a temperature of room temperature to 700 ° C. and under a vacuum, oxygen, argon, or nitrogen gas atmosphere. Do.

Furthermore, surface treatment and heat treatment to improve the mechanical bonding between the two materials (901/902, 903/904) and the formation of the ohmic contact interface before and after performing the wafer bonding process. Processes may be introduced.

12 is a cross-sectional view illustrating a process of lifting off a growth substrate and a temporary substrate, respectively, in a wafer bonded sandwich structure composite.

As shown, the process of lifting off the growth substrate 101, which is part of the growth substrate wafer, and the temporary substrate 170 of the temporary substrate wafer in the wafer-bonded sandwich structure complex 5, has a strong energy. A laser beam 103, which is a photon beam having, is irradiated to the rear surface of the optically transparent growth substrate 101 and the temporary substrate 170, and between the growth substrate 101 and the n-type nitride cladding layer of the multilayer structure for a light emitting diode device. The growth substrate 101 is separated by thermal-chemical decomposition reaction at the interface. In addition, a thermal-chemical decomposition reaction is generated at the interface between the temporary substrate 170 and the sacrificial separation layer 180 to separate and remove the temporary substrate 170.

In addition, according to the physical and chemical properties of the growth substrate 101 and the temporary substrate 170, a chemical wet etching using a chemical-mechanical polishing or etching solution may be used.

FIG. 13 is a cross-sectional view of a composite in which surface irregularities are introduced on the n-type nitride cladding layer after separating the growth substrate of the growth substrate wafer and the temporary substrate of the temporary substrate wafer.

Referring to FIG. 13, as a process step performed after the growth substrate 101 and the temporary substrate 170 are stably completely removed, the n-type nitride cladding layer 301 is atmospheric by using chemical wet etching or dry etching. The etching is performed to expose the air, and the unevenness 203 is performed on the surface of the n-type nitride cladding layer 301 exposed to the atmosphere by using wet or dry etching.

14 is a cross-sectional view of a composite in which an n-type electrode structure is formed on a portion of the upper surface of an n-type nitride clad layer on which surface irregularities are formed.

Referring to FIG. 14, a partial n-type electrode structure 303 is formed in a portion of the upper surface of the n-type nitride cladding layer 301 on which the surface irregularities 203 are formed. The n-type electrode structure 303 is preferably formed of a reflective material having a reflectivity of 50% or more in a wavelength band of 600 nm or less. In this case, the n-type electrode structure 303 may be composed of Cr / Al / Cr / Au.

In addition, the n-type electrode structure 303 has the same shape and dimensions as the current blocking structure 11 of the p-type electrode structure formed on the upper surface of the p-type nitride cladding layer 501, and simultaneously the cross-sectional view of the light emitting diode. At the same position in the vertical direction.

FIG. 15 is a cross-sectional view illustrating a light emitting diode device having a vertical structure after forming a p-type ohmic contact electrode pad on a rear surface of a heat sink supporter.

Referring to FIG. 15, a p-type ohmic contact electrode pad 403 is formed on a rear surface of the heatsink support 302 from which the temporary substrate 170 is separated and removed, thereby completing a vertical light emitting diode device.

16 to 26 are cross-sectional views illustrating a method of manufacturing a group III-nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

FIG. 16 is a cross-sectional view illustrating a growth substrate wafer in which a multi-layer structure for group III-nitride semiconductor light emitting diode devices is grown and stacked on a growth substrate.

Referring to FIG. 16, an n-type nitride cladding layer 301 made of an n-type conductive single crystal semiconductor material, a nitride-based active layer 401, and a p-type conductivity are formed on the growth substrate 101. And a p-type nitride cladding layer 501, a surface modification layer 502, and a current spreading layer 601 made of a single crystal semiconductor material.

16A, the n-type part nitride-based cladding layer 301 may be formed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 401 may have a multi-quantum well structure. It may consist of an undoped InGaN layer of quantum wells. In addition, the p-type nitride cladding layer 501 may be composed of a p-type conductive GaN layer and an AlGaN layer. Prior to growing the multilayer structure for the basic light emitting diode device composed of the group III-nitride-based semiconductor layer described above using a well-known process such as MOCVD or MBE single crystal growth method, the n-type nitride cladding layer 301 and Another buffer layer such as InGaN, AlN, SiC, SiCN, or GaN is formed on top of the growth surface, which is the uppermost layer of the growth substrate 101, to improve lattice matching with the growth surface, which is the uppermost layer of the growth substrate 101. It is preferable to further form 201).

The surface modification layer 502 disposed on the p-type nitride cladding layer 501 is continuously formed in a growth equipment chamber using MOCVD and MBE, which are single crystal group III-nitride semiconductor growth equipment. Well-known superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or surface formed with nitrogen polarity (nitrogen-polar surface It is formed of any one selected from the group consisting of group III nitride system having a).

In particular, the surface modification layer 502 of the superlattice structure is preferably made of nitride or carbon nitride containing group 2, 3, or 4 elements.

Referring to FIG. 16B, the current spreading layer 601 disposed on the surface modification layer 502 may grow the p-type nitride cladding layer 501, and then deposit and heat-treatment the material. The current spreading layer 601 may be formed through a subsequent process of forming a ohmic contacting interface with the surface modification layer 502 to perform current injection in a vertical direction. In addition, it is an electrically conductive thin film having low sheet resistance and excellent in current spreading in the horizontal direction.

In particular, the current spreading layer 601 is formed of a transparent material that can transmit the light generated in the nitride-based active layer without absorption. In this case, the current spreading layer 601 is composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au).

FIG. 17 is a cross-sectional view illustrating the first process for forming a current blocking structure, which is a part of a p-type electrode structure, on an upper layer of a growth substrate wafer.

Referring to FIG. 17, the p-type nitride cladding layer 501 is atmosphered by etching deeper than the thickness h of the thickness of the current spreading layer 601 and the surface modification layer 502. air).

FIG. 18 is a cross-sectional view after deposition of an electrically conductive material film as a second process for forming an electrode thin film layer that is part of a p-type electrode structure of a growth substrate wafer.

Referring to FIG. 18, an electroconductive electrode thin film layer 12 is formed by depositing on the p-type nitride cladding layer 501, the surface modification layer 502, and the current spreading layer 601 exposed to the air. The type electrode structure 801 is completed. In particular, the p-type electrode structure 801 may be divided into eight regions, and the electrode thin film layers 12a, 12b, and 12g contacting the p-type nitride cladding layer 501 exposed to the atmosphere may have a schottky contacting interface. On the other hand, the current spreading layer 601 and the electrode thin film layers 12c, 12d, 12e, and 12f in contact with the upper surface modification layer 502 form an ohmic contacting interface. .

In addition, the partial region 11 of the p-type electrode structure 801 may be formed of an oxide that is air or electrically insulating.

19 to 20 are cross-sectional views of the p-type electrode structure after the wafer bonding layer is formed.

Referring to FIG. 19, an electrically conductive wafer bonding layer 901 is deposited on a portion of the p-type electrode structure 801. At this time, the wafer bonding layer 901 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. Can be formed. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

Referring to FIG. 20, an electrically conductive wafer bonding layer 901 is deposited on the entire region of the p-type electrode structure 801. At this time, the wafer bonding layer 901 is a multi-layer of a metal, an alloy, or a solid solution which may play a role of high reflection of light, prevention of diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. Can be formed. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

21 is a cross-sectional view of preparing a heterogeneous supporting substrate wafer and a temporary substrate wafer, which are heat sink supports developed by the present inventors, respectively.

As shown in FIG. 21A, the hetero support substrate wafer is composed of a hetero support substrate 302 which is a heatsink support and two wafer bonding layers 902 and 903 formed on and under the hetero support substrate 302. .

The heterogeneous support substrate 302, which is a heatsink support of the heterogeneous support substrate wafer, preferably has excellent electrical or thermal conductivity. In this case, the heat sink support may be a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, or a plate such as Ni, Cu, Nb, CuW, NiW, NiCu, or the like. The foil is selected first.

The wafer bonding layers 902 and 903 formed on the upper and lower surfaces of the hetero supporting substrate 302, which are heat sink supports of the hetero supporting substrate wafer, are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or higher. . At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

As shown in FIG. 21B, the temporary substrate wafer is composed of a temporary substrate 170, a sacrificial separation layer 180, and a wafer bonding layer 904.

The temporary substrate 170 of the temporary substrate wafer has optical transmittance of 70% (%) or more in the wavelength range of 500 nanometers (nm) or less, or the thermal expansion coefficient difference between the growth substrate 101 and 2 PPM ( ppm / ° C.) are preferred. In this case, the temporary substrate 170 may include sapphire (Al ₂ O ₃ ), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), and spinel. (spinel), lithium niobate (lithium niobate), neodymium gallate (neodymium gallate), gallium oxide (Ga ₂ O ₃ ) It is formed of any one selected from the group consisting of.

The sacrificial separation layer 180 of the temporary substrate wafer is made of a material advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The wafer bonding layer 904 of the temporary substrate wafer is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, metallic silicide.

FIG. 22 is a cross-sectional view of a wafer bonded layer on the top and bottom surfaces of a heterogeneous supporting substrate and a wafer bonded layer of a growth substrate and a temporary substrate, respectively, and then bonded to each other in a sandwich structure to form a composite.

Referring to FIG. 22, a wafer bonding layer 901 of the growth substrate wafer, a wafer bonding layer 902 of the upper surface of the heterogeneous supporting substrate wafer, a wafer bonding layer 903 of the lower surface of the heterogeneous supporting substrate wafer, and the temporary Each of the wafer bonding layers 904 of the substrate wafer is opposed to each other to form a composite structure 6 having a sandwich structure by a wafer bonding process.

The wafer bond is preferably formed by applying a predetermined hydrostatic pressure under a temperature of room temperature to 700 ° C. and under a vacuum, oxygen, argon, or nitrogen gas atmosphere. Do.

Furthermore, surface treatment and heat treatment to improve the mechanical bonding between the two materials (901/902, 903/904) and the formation of the ohmic contact interface before and after performing the wafer bonding process. Processes may be introduced.

FIG. 23 is a cross-sectional view illustrating a process of lifting off a growth substrate and a temporary substrate in a wafer bonded sandwich structure composite.

As shown, the process of lifting off the growth substrate 101, which is part of the growth substrate wafer, and the temporary substrate 170 of the temporary substrate wafer in the wafer-bonded sandwich structure complex 6, has a strong energy. A laser beam 103, which is a photon beam having, is irradiated to the rear surface of the optically transparent growth substrate 101 and the temporary substrate 170, and between the growth substrate 101 and the n-type nitride cladding layer of the multilayer structure for a light emitting diode device. The growth substrate 101 is separated by thermal-chemical decomposition reaction at the interface. In addition, a thermal-chemical decomposition reaction is generated at the interface between the temporary substrate 170 and the sacrificial separation layer 180 to separate and remove the temporary substrate 170.

In addition, depending on the physical and chemical properties of the growth substrate 101 and the temporary substrate 170, a chemical wet etching using a chemical-mechanical polishing or etching solution may be used.

24 is a cross-sectional view of a composite in which surface irregularities are introduced on an n-type nitride cladding layer after separating a growth substrate of a growth substrate wafer and a temporary substrate of a temporary substrate wafer.

Referring to FIG. 24, as a process step performed after the growth substrate 101 and the temporary substrate 170 are stably completely removed, the n-type nitride cladding layer 301 is atmospheric by using chemical wet etching or dry etching. The etching is performed to expose the air, and the unevenness 203 is performed on the surface of the n-type nitride cladding layer 301 exposed to the atmosphere by using wet or dry etching.

FIG. 25 is a cross-sectional view of a composite in which an n-type electrode structure is formed on a portion of the upper surface of an n-type nitride clad layer in which surface irregularities are formed.

Referring to FIG. 25, a partial n-type electrode structure 303 is formed in a portion of the upper surface of the n-type nitride cladding layer 301 on which the surface irregularities 203 are formed. The n-type electrode structure 303 is preferably formed of a reflective material having a reflectivity of 50% or more in a wavelength band of 600 nm or less. In this case, the n-type electrode structure 303 may be composed of Cr / Al / Cr / Au.

In addition, the n-type electrode structure 303 has the same shape and dimensions as the current blocking structure 11 of the p-type electrode structure formed on the upper surface of the p-type nitride cladding layer 501, and the cross-sectional view of the light emitting diode Place them face up in the same position in the vertical direction.

FIG. 26 is a cross-sectional view illustrating a light emitting diode device having a vertical structure after forming a p-type ohmic contact electrode pad on a rear surface of a heat sink supporter.

Referring to FIG. 26, a p-type ohmic contact electrode pad 403 is formed on a rear surface of the heatsink support 302 from which the temporary substrate 170 is separated and removed, thereby completing a vertical light emitting diode device.

The present invention is not limited to the above-described embodiments, but can be variously modified and changed by those skilled in the art, which should be regarded as included in the spirit and scope of the present invention as defined in the appended claims. something to do.

1 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a first embodiment according to the present invention.

2 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a second embodiment according to the present invention.

3 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a third embodiment according to the present invention.

4 is a cross-sectional view showing a group III nitride semiconductor light emitting diode device having a vertical structure as a fourth embodiment according to the present invention.

5 to 15 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

16 to 26 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

27 is a schematic cross-sectional view of a group III-nitride semiconductor light emitting diode device having a horizontal structure according to the prior art;

28 is a cross-sectional view of a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure according to the prior art.

Claims (44)

n-type electrode structure; A multi-layer structure for group III nitride semiconductor light emitting diode devices in which an n-type nitride cladding layer, a nitride-based active layer, a p-type nitride cladding layer, and a current spreading layer are sequentially stacked on the lower surface of the n-type electrode structure; A p-type electrode structure including a current blocking structure having a trench shape and an electrode thin film layer on an upper surface of the multilayer structure for a light emitting diode device; A wafer bonding layer formed on the bottom surface of the p-type electrode structure; A heatsink support formed on the bottom surface of the wafer bonding layer; And And a p-type ohmic contact electrode pad formed on a bottom surface of the heat sink support. The method of claim 1, The current spreading layer is a vertical group III-nitride semiconductor formed of a transparent conductive material that forms an ohmic contact interface with the p-type nitride cladding layer and simultaneously transmits the light generated in the nitride-based active layer without absorption. Light emitting diode device. The method of claim 2, The current spreading layer is a vertical group III-nitride semiconductor light emitting diode device composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au). . The method of claim 1, The current blocking structure, which is a part of the p-type electrode structure, is etched in a vertical direction at least deeper than the thickness of the current spreading layer to trench a portion of the p-type nitride clad layer exposed to the air. A group III-nitride semiconductor light emitting diode having a vertical structure having a shape. The method of claim 1, The electrode thin film layer, which is a part of the p-type electrode structure, is a vertical structure group 3 that forms an electrically conductive material film through partial or complete deposition on the current spreading layer and the p-type nitride cladding layer exposed to the atmosphere. Group nitride semiconductor light emitting diode device. The method of claim 5, The refilled electroconductive electrode thin film layer in contact with the p-type nitride cladding layer forms a schottky contacting interface, whereas the electroconductive electrode thin film layer in contact with the currant spreading layer has an ohmic contact interface. A group III-nitride semiconductor light emitting diode device having a vertical structure forming an ohmic contacting interface. The method of claim 1, In addition to preventing current concentration in the vertical direction, the p-type electrode structure is multi-layered to play a role of high reflection of light, diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. A group III-nitride semiconductor light emitting diode device having a vertical structure having a separate electrode thin film layer having a layer structure. The method of claim 1, The heat-sink support includes wafers such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, and plates such as Ni, Cu, Nb, CuW, NiW, NiCu, etc. A group III-nitride semiconductor light emitting diode device having a vertical structure composed of a plate) or a foil. n-type electrode structure; Multi-layer structure for group III nitride semiconductor light emitting diode device in which an n-type nitride cladding layer, a nitride-based active layer, a p-type nitride cladding layer, a surface modification layer, and a current spreading layer are sequentially stacked on the lower surface of the n-type electrode structure ; A p-type electrode structure including a current blocking structure having a trench shape and an electrode thin film layer on an upper surface of the multilayer structure for a light emitting diode device; A wafer bonding layer formed on the bottom surface of the p-type electrode structure; A heatsink support formed on the bottom surface of the wafer bonding layer; And And a p-type ohmic contact electrode pad formed on a bottom surface of the heat sink support. The method of claim 9, The surface modification layer is formed of a superlattice structure, n-type InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type InGaN, AlInN, InN, AlGaN, or nitrogen polarity. A group III nitride semiconductor light emitting diode device having a vertical structure composed of a group III nitride system having a surface. The method of claim 10, The surface modification layer of the superlattice structure is a vertical group III-nitride semiconductor light emitting diode device composed of nitride or carbon nitride containing group II, III, or IV element elements. . The method of claim 9, The current spreading layer is a vertical group III-nitride semiconductor formed of a transparent conductive material that forms an ohmic contact interface with the p-type nitride cladding layer and simultaneously transmits the light generated in the nitride-based active layer without absorption. Light emitting diode device. The method of claim 12, The current spreading layer is a vertical group III-nitride semiconductor light emitting diode device composed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and oxidized nickel-gold (NiO-Au). . The method of claim 9, The current blocking structure, which is a part of the p-type electrode structure, is etched in a vertical direction deeper than at least the thickness of the surface modification layer thickness and the current spreading layer thickness to air a portion of the p-type nitride cladding layer. A group III-nitride semiconductor light emitting device having a vertical structure having a trench shape exposed to the semiconductor device. The method of claim 9, The electrode thin film layer, which is a part of the p-type electrode structure, is formed vertically by partial or complete deposition of an electrically conductive material film on the surface modification layer, the current spreading layer, and the p-type nitride cladding layer exposed to the atmosphere. Group III-nitride semiconductor light emitting device having a structure. The method of claim 15, The refilled electrically conductive electrode thin film layer in contact with the p-type nitride cladding layer forms a schottky contacting interface, while the electrically conductive electrode thin film layer in contact with the surface modification layer and current spreading layer is ohmic. A group III-nitride semiconductor light emitting diode device having a vertical structure forming an ohmic contacting interface. The method of claim 9, In addition to preventing current concentration in the vertical direction, the p-type electrode structure is multi-layered to play a role of high reflection of light, diffusion of materials, improvement of adhesion of materials, or prevention of oxidation of materials. A group III-nitride semiconductor light emitting diode device having a vertical structure having a separate electrode thin film layer having a layer structure. The method of claim 9, The heat-sink support includes wafers such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, AlSiC, and plates such as Ni, Cu, Nb, CuW, NiW, NiCu, etc. A group III-nitride semiconductor light emitting diode device having a vertical structure composed of a plate) or a foil. A growth substrate wafer in which a multi-layer structure for group III nitride light-emitting diode devices consisting of an n-type nitride cladding layer including a buffer layer, a nitride-based active layer, a p-type nitride cladding layer, and a current spreading layer is sequentially stacked on the top of the growth substrate. Preparing a; Forming a trench blocking current blocking structure in the current spreading layer through an etching process; Grafting the current blocking structure to form a p-type electrode structure; Forming a wafer bonding layer on the p-type electrode structure; Stacking a wafer bonding layer on the upper and lower surfaces of the heterogeneous supporting substrate which is a heat sink support; Stacking a sacrificial separation layer and a wafer bonding layer on an upper surface of the temporary substrate; Bonding a wafer to a sandwich structure in which the growth substrate and the temporary substrate are positioned on upper and lower surfaces of the heterogeneous supporting substrate to form a composite; Separating the growth substrate and the temporary substrate from the wafer-bonded composite with the sandwich structure, respectively; Forming surface irregularities and an n-type electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; And forming a p-type ohmic contact electrode pad on a rear surface of the heterogeneous supporting substrate of the composite from which the temporary substrate is removed. The method of claim 19, In the step of forming the trench-type current blocking structure, the etching depth is at least deeper than the current spreading layer thickness to expose the p-type nitride-based cladding layer to the atmosphere. Diode device manufacturing method. The method of claim 19, In the forming of the p-type electrode structure, a vertical structure in which an optical reflective layer, a diffusion barrier layer, a mechanical adhesive layer, or an oxidation protection layer is separately added. A method of manufacturing a group III nitride semiconductor light emitting diode device. The method of claim 19, In the forming of the n-type electrode structure, a vertical group III-nitride semiconductor light emitting device having the same dimension and shape as the current blocking structure and disposed to face the same position as the current blocking structure in the vertical direction. Diode device manufacturing method. The method of claim 19, The sacrificial separation layer is a vertical group III-nitride semiconductor light emitting diode device manufacturing method of the oxide, nitride, or metal which is advantageous for lifting (off) the supporting substrate. The method of claim 19, When the sacrificial separation layer is separated by irradiating a photon beam of a specific wavelength band having a strong energy, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN A method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure formed of any one selected. The method of claim 19, A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of Au, Ag, Pd, SiO 2, and SiN x when etching by separating in a wet etching solution. The method of claim 19, The temporary substrate has a vertical expansion group and a thermal expansion coefficient (thermal expansion coefficient) difference of less than 2 ppm (ppm) vertical group III-nitride semiconductor light emitting device manufacturing method of a vertical structure. The method of claim 19, A method for manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure, wherein the heterogeneous supporting substrate has excellent electrical or thermal conductivity. The method of claim 19, And a wafer bonding layer formed on the growth substrate and the upper layer of the supporting substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. The method of claim 19, The wafer bonding layer has a vertical structure formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, and metallic silicide. A method of manufacturing a group III nitride semiconductor light emitting diode device. The method of claim 19, The process of separating the growth substrate and the supporting substrate may be performed by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or a vertical structure using thermal-chemical decomposition by irradiating a photon beam having a strong energy. Method of manufacturing a group nitride semiconductor light emitting diode device. The method of claim 19, In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. A group 3 nitride-based semiconductor light emitting diode device having a vertical structure. On top of the growth substrate, a multi-layer structure for group III nitride light-emitting diode devices consisting of an n-type nitride cladding layer including a buffer layer, a nitride-based active layer, a p-type nitride cladding layer, a surface modification layer, and a current spreading layer is sequentially stacked. Preparing a grown substrate wafer; Forming a trench blocking current blocking structure in the surface modification layer and the current spreading layer through an etching process; Grafting the current blocking structure to form a p-type electrode structure; Forming a wafer bonding layer on the p-type electrode structure; Stacking a wafer bonding layer on the upper and lower surfaces of the heterogeneous supporting substrate which is a heat sink support; Stacking a sacrificial separation layer and a wafer bonding layer on an upper surface of the temporary substrate; Bonding a wafer to a sandwich structure in which the growth substrate and the temporary substrate are positioned on upper and lower surfaces of the heterogeneous supporting substrate to form a composite; Separating the growth substrate and the temporary substrate from the wafer-bonded composite with the sandwich structure, respectively; Forming surface irregularities and an n-type electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; And forming a p-type ohmic contact electrode pad on a back surface of the heterogeneous supporting substrate of the composite from which the temporary substrate is removed. The method of claim 32, In the forming of the trench-type current blocking structure, the etching depth is at least deeper than the sum of the surface modification layer thickness and the current spreading layer thickness to expose the p-type nitride cladding layer to the atmosphere. A method of manufacturing a group III nitride semiconductor light emitting diode device. The method of claim 32, Vertical structure group to add an optical reflective layer, a diffusion barrier layer, a mechanical adhesive layer, or an oxidation protection layer in the step of forming the p-type electrode structure Method of manufacturing a group III nitride semiconductor light emitting diode device. The method of claim 32, In the forming of the n-type electrode structure, a vertical group III-nitride semiconductor light emitting device having the same dimension and shape as the current blocking structure and disposed to face the same position as the current blocking structure in the vertical direction. Diode device manufacturing method. The method of claim 32, The sacrificial separation layer is a vertical group III-nitride semiconductor light emitting diode device manufacturing method of the oxide, nitride, or metal which is advantageous for lifting (off) the supporting substrate. The method of claim 32, When the sacrificial separation layer is separated by irradiating a photon beam of a specific wavelength band having a strong energy, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN A method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure formed of any one selected. The method of claim 32, A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of Au, Ag, Pd, SiO 2, and SiN x when etching by separating in a wet etching solution. The method of claim 32, And wherein the temporary substrate has a difference between the growth substrate and the thermal expansion coefficient of 2 ppm or less, wherein the group III nitride semiconductor light emitting diode device has a vertical structure. The method of claim 32, A method for manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure, wherein the heterogeneous supporting substrate has excellent electrical or thermal conductivity. The method of claim 32, And a wafer bonding layer formed on the growth substrate and the upper layer of the supporting substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 ° C. or higher. The method of claim 32, The wafer bonding layer has a vertical structure formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge, and metallic silicide. A method of manufacturing a group III nitride semiconductor light emitting diode device. The method of claim 32, The process of separating the growth substrate and the supporting substrate may be performed by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or a vertical structure using thermal-chemical decomposition reaction by irradiating a photon beam having a strong energy. Method of manufacturing a group nitride-based semiconductor light emitting diode device. The method of claim 32, In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. A group 3 nitride-based semiconductor light emitting diode device having a vertical structure.

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