KR101510382B1 - fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods - Google Patents
fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods Download PDFInfo
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- KR101510382B1 KR101510382B1 KR20080037479A KR20080037479A KR101510382B1 KR 101510382 B1 KR101510382 B1 KR 101510382B1 KR 20080037479 A KR20080037479 A KR 20080037479A KR 20080037479 A KR20080037479 A KR 20080037479A KR 101510382 B1 KR101510382 B1 KR 101510382B1
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Abstract
The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method of manufacturing the same, which includes a partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, and a upper nitride-based clad layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure comprising a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer under the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.
The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method for fabricating the same, which includes: a front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, and a upper nitride-based clad layer below the front n-type ohmic contact electrode structure; A p-type electrode structure comprising a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer under the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.
More specifically, a growth substrate wafer and a functional bonding wafer, on which the light emitting structure for the group III nitride-based semiconductor light emitting diode device is grown, are bonded to a wafer-to- to-wafer bonding and a lift-off process to provide a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a manufacturing method thereof.
A light emitting structure for a light emitting diode element, a nitride based current injection layer, a transparent current injection layer, a first passivation layer, a second passivation layer, a reflective current spreading layer, a conductive line film body, a superlattice structure, a Group III nitride semiconductor light emitting diode, , Sacrificial separation layer, wafer bonding layer, functional bonding wafer, p-type electrode structure, heat sink support, wafer-to-wafer bonding,
Description
The present invention relates to a method of manufacturing a semiconductor device having a vertical structure using a single crystal group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same. More specifically, a growth substrate wafer on which a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device including a p-type electrode structure is grown on a growth substrate, and a functional bonding wafer the present invention provides a method of manufacturing a group III nitride-based semiconductor light-emitting diode device having a vertical structure by combining a wafer-to-wafer bonding process and a substrate-lift-off process, .
Recently, a light emitting diode (LED) device using a group III nitride-based semiconductor single crystal has been used as a nitride-based active layer. In x Al y Ga 1-xy N (0? X, 0? Y, x + ) The material band has a wide band gap. In particular, according to the composition of In, it is known as a material capable of emitting light in the entire region of visible light, and ultraviolet light can be generated in a microwave region depending on the composition of Al. The light emitting diode manufactured using the light emitting diode, Devices for backlighting, medical light sources including white light sources, and the like, have been widely used, and as the range of applications is gradually expanding and increasing, the development of high quality light emitting diodes is becoming very important.
Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device manufactured from the group III nitride-based semiconductor material is generally grown on an insulating growth substrate (typically, sapphire) -5 group compound semiconductor light emitting diode device, two electrodes of the LED device facing each other on the opposite sides of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the upper part of the crystal growth material. The conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIGS. 1 to 4. FIG.
First, referring to FIG. 1, a group III nitride-based semiconductor light emitting diode device includes a
As described above, since the
In particular, since the upper nitride-based
The ohmic contact
As described above, in order to obtain a high-luminance light-emitting diode device through a high light transmittance of the ohmic contact
A transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride- Recently, YK Su et al. Have reported that the above-mentioned transparent electroconductive material can be used as a good ohmic contact current spreading
2, the superlattice structure has two layers a1 and b1 of a well (b1) and a barrier (a1) in a multi-quantum well structure The thickness of the barrier (a1) of the multiple quantum well structure is relatively thick compared to the thickness of the well (b1), while the thickness of the barrier (a1) of the multiple quantum well structure is thicker than that of the two layers a2, and b2 have a thin thickness of 5 nm or less. Due to the above-described characteristic, the multiple quantum well structure plays a role of confinement of electrons or holes as carriers into a well b1 located between the thick barrier a1, And facilitates the transport of the liquid.
Referring to FIG. 3, a light emitting diode device having an ohmic contact current spreading
Depending on the composition and the type of dopant constituting the
In general, the lower nitride-based cladding layer / the nitride-based active layer / the upper nitride-based cladding layer /
However, the material used for the ohmic contact current spreading layer (501 or 60) composed of the transparent electroconductive material located on the upper surface of the upper nitride-based clad layer (40) has a trade-off relationship between the transmittance and the electric conductivity have. That is, if the thickness of the ohmic contact current spreading layer (501 or 60) is reduced to increase the transmittance, the conductivity of the ohmic contact current spreading layer (501 or 60) is lowered. Conversely, the conductivity of the Group III nitride semiconductor light emitting diode device increases, Resulting in a problem of degradation of device reliability.
Therefore, as a method of not using an ohmic contact current spreading layer composed of a transparent electrically conductive material, in the case of an optically transparent growth substrate, an electrically conductive material having a high reflectance is formed on the upper surface of the nitride- It is conceivable to form the formed ohmic contact
As shown in the figure, a group III nitride-based semiconductor light-emitting diode device having a flip chip structure includes an optically transparent
In general, a light emitting diode device which has been widely used by using group III nitride-based semiconductors is generated in ultraviolet to blue-green by using InGaN, AlGaN or the like in the nitride-based
On the other hand, since the group III nitride-based semiconductor light-emitting diode device having the general structure and flip-chip structure has a horizontal structure and is fabricated on the
In addition, as shown and described, in order to form two ohmic contact electrodes and electrode pads, it is necessary to remove a part of the nitride-based
In addition, after the manufacturing process of the light emitting diode device is completed on the wafer, the lapping, polishing, scribing, sawing, and braking breaking of the
In order to solve the problem of the group III nitride-based semiconductor light-emitting diode device having the horizontal structure described above, the
41 is a cross-sectional view showing a general manufacturing process of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as an example of the prior art. As shown in FIG. 41, in a general vertical structure light emitting diode device manufacturing method, a light emitting structure for a light emitting diode device is formed on a
41, an undoped GaN or
However, the above-described vertical-structure LED device manufacturing process has various problems as described below, and it is difficult to secure a large number of single-vertically-structured LED devices in a safe manner. That is, since the bonding of the soldering wafer is performed in a low temperature range, a high temperature process which is higher than the soldering wafer bonding temperature can not be performed in a subsequent step, and it is difficult to realize a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are coupled between different dissimilar wafers, thermal stress is generated at the time of bonding, which seriously affects the reliability of the light emitting diode device.
More recently, in order to solve the problems occurring in a group III nitride-based semiconductor light emitting diode device having a vertical structure manufactured by the above-described soldering wafer bonding, Cu, Ni, etc. are used instead of the electrically conductive supporting substrate formed by soldering wafer bonding A technique of forming a metal thick film on the reflective p-type Ohmic
However, in the subsequent processes occurring in the LED manufacturing process of the vertical structure manufactured by combining with the electroplating process, that is, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, Problems such as degradation of the performance of the device and occurrence of defects still remain as a problem to be solved.
Disclosure of the Invention The present invention has been made in recognition of the above-mentioned problems, and it is an object of the present invention to provide a growth substrate having a group represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) A growth substrate wafer having a p-type electrode structure composed of a light-emitting structure for a III-nitride-based semiconductor light-emitting diode element, a transparent current injection layer, a first passivation layer, a conductive line film body and a reflective current spreading layer, And a functional bonding wafer including a supporting substrate devised by the present inventors, to manufacture a light emitting diode device having a vertical structure and a manufacturing method thereof.
More specifically, a growth substrate wafer in which a light emitting structure for a group III nitride-based semiconductor light-emitting diode device including a p-type electrode structure is grown on a growth substrate and a functional bonded wafer are wafer-to-wafer bonded Next, the growth substrate and the supporting substrate are sequentially removed through a lift-off process to provide a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a manufacturing method thereof.
In order to achieve the above object,
A partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, and a upper nitride-based clad layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure comprising a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer formed on a lower layer of the light emitting structure; And a heat sink support formed on a lower layer portion of the p-type electrode structure.
The partial n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) may have a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, each having at least 50% reflectance in the wavelength region of less than 600nm A reflective ohmic contact electrode and an electrode pad.
The transparent current injection layer forms an ohmic contacting interface with the upper nitride-based clad layer to facilitate current injection in the vertical direction.
The transparent current injection layer is made of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on the upper surface of the light emitting structure for the light emitting diode device.
The first passivation layer protects the top surface of the light emitting structure for the light emitting diode device and prevents diffusion of the material constituting the reflective current spreading layer into the transparent current injection layer and the light emitting structure. (diffusion barrier).
The first passivation layer is made of a material that is electrically insulative and has a transmittance of 70% or more in a wavelength band of 600 nm or less.
The first passivation layer may be formed by patterning a region of 50% or less of the entire region in the form of a via-hole and then electrically connecting the transparent current injection layer and the reflective current spreading layer, (Not shown).
Wherein the reflective current spreading layer conducts current to the transparent current injection layer through the current spreading in the horizontal direction and the conductive line film on the upper surface of the first passivation layer, It reflects the light generated from the structure in the opposite direction.
The reflective current spreading layer is formed of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on the upper surface of the first passivation layer.
The heat-sink support may be formed of an electrically conductive material film having a thickness of at least 10 microns or more, using electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) .
In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure can prevent current concentration in the vertical direction and serve as a reflector for light, Or a separate thin film layer capable of performing an antioxidant function of the material.
On the other hand, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device may be formed by using well-known n-type conductive InGaN, GaN, AlInN, AlN, or the like having a thickness of 5 nm or less before forming the transparent current injection layer. A single layer of InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer, p-type conductive InGaN having a thickness of 5 nm or less, GaN, AlInN, AlN, InN, AlGaN, AlInGaN monolayer, ) Element of the
In order to achieve the above other object,
A front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, and a upper nitride-based clad layer below the front n-type ohmic contact electrode structure; A p-type electrode structure comprising a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer formed on a lower layer of the light emitting structure; And a heat sink support formed on a lower layer portion of the p-type electrode structure.
The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic having at least 70% transmittance in the wavelength range of less than the lower forming nitride-based cladding layer region and the ohmic contact interface with the entire upper surface of the 600nm And a reflective electrode pad formed on the upper surface of the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.
The transparent current injection layer forms an ohmic contacting interface with the upper nitride-based clad layer to facilitate current injection in the vertical direction.
The transparent current injection layer is made of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on the upper surface of the light emitting structure for the light emitting diode device.
The first passivation layer protects the top surface of the light emitting structure for the light emitting diode device and prevents diffusion of the material constituting the reflective current spreading layer into the transparent current injection layer and the light emitting structure. (diffusion barrier).
The first passivation layer is made of a material that is electrically insulative and has a transmittance of 70% or more in a wavelength band of 600 nm or less.
The first passivation layer may be formed by patterning a region of 50% or less of the entire region in the form of a via-hole and then electrically connecting the transparent current injection layer and the reflective current spreading layer, (Not shown).
Wherein the reflective current spreading layer conducts current to the transparent current injection layer through the current spreading in the horizontal direction and the conductive line film on the upper surface of the first passivation layer, It reflects the light generated from the structure in the opposite direction.
The reflective current spreading layer is formed of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on the upper surface of the first passivation layer.
The heat-sink support may be formed using an electro-conductive material having a thickness of at least 10 microns or more, using electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) .
In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure has a function of preventing diffusion of a substance in addition to current blocking and reflection of light in a vertical direction. barrier, a separate thin film layer capable of performing bonding and bonding enhancement between materials, or preventing oxidation of a material.
On the other hand, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device may be formed by using well-known n-type conductive InGaN, GaN, AlInN, AlN, or the like having a thickness of 5 nm or less before forming the transparent current injection layer. A single layer of InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer, p-type conductive InGaN having a thickness of 5 nm or less, GaN, AlInN, AlN, InN, AlGaN, AlInGaN monolayer, ) Element of the
In order to accomplish the above object, the present invention provides a method of fabricating a vertical structure light emitting diode device using a light emitting structure for a group III nitride-based semiconductor light emitting diode device,
Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device is successively grown, the light emitting structure including a lower nitride-based clad layer including a buffer layer, a nitride-based active layer, and a upper nitride-based clad layer on an upper surface of a growth substrate; Forming a p-type electrode structure composed of a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer on the upper surface of the upper nitride-based clad layer as the uppermost layer of the light emitting diode for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of a supporting substrate; Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding; Separating the growth substrate of the growth substrate wafer from the composite; Forming a surface irregularity and a partial n-type ohmic contact electrode structure on the lower nitride-based clad layer of the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer from the composite from which the growth substrate has been removed.
The light-emitting structure for the group III nitride-based semiconductor light-emitting diode device may be a well-known n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or InGaN having a thickness of 5 nm or less before forming the transparent current injection layer. AlN, AlN, InN, AlGaN, AlInGaN monolayer, and other dopant and composition elements having a thickness of 5 nm or less with p-type conductivity having a thickness of 5 nm or less; AlInGaN, SiC, SiCN, MgN, Or a superlattice composed of nitride or carbon nitride of
The p-type electrode structure (p -type electrode system) the configuration and the transparent current injection layer and the reflective current spreading layer, which is filled with the first passivation layer patterned to form a via hole electrically conductive body of the conductive line film electrically connected to .
The sacrificial separation layer of the functional bonded wafer is made of a material that is advantageous for separating the support plate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.
The heat-sink support of the functional bonded wafer may be formed using an electroplating process, such as electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) And is formed of a conductive material film.
The wafer bonding layer on the growth substrate and the support substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 ° C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.
Part of n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) it may have a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, having a reflectivity of 50% or more reflectivity in the wavelength region of less than 600nm An ohmic contact electrode and an electrode pad.
The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.
The steps of annealing and surface treatment are introduced before and after each step as well as electrical and optical characteristics of the group III nitride-based semiconductor light-emitting diode device, as means for enhancing the mechanical bonding force between the respective layers. .
According to another aspect of the present invention, there is provided a method of fabricating a vertical structure light emitting diode device using a light emitting structure for a group III nitride based semiconductor light emitting diode device,
Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device is successively grown, the light emitting structure including a lower nitride-based clad layer including a buffer layer, a nitride-based active layer, and a upper nitride-based clad layer on an upper surface of a growth substrate; Forming a p-type electrode structure including a transparent current injection layer, a passivation layer, and a reflective current spreading layer on an upper surface of the upper nitride-based cladding layer, which is an uppermost portion of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of a supporting substrate; Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding; Separating the growth substrate of the growth substrate wafer from the composite; Forming a surface irregular surface and an entire n-type ohmic contact electrode structure on a lower nitride-based clad layer of the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer from the composite from which the growth substrate has been removed.
The light-emitting structure for the group III nitride-based semiconductor light-emitting diode device may be a well-known n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or InGaN having a thickness of 5 nm or less before forming the transparent current injection layer. AlN, AlN, InN, AlGaN, AlInGaN monolayer, and other dopant and composition elements having a thickness of 5 nm or less with p-type conductivity having a thickness of 5 nm or less; AlInGaN, SiC, SiCN, MgN, Or a superlattice composed of nitride or carbon nitride of
The p-type electrode structure (p -type electrode system) the configuration and the transparent current injection layer and the reflective current spreading layer, which is filled with the first passivation layer patterned to form a via hole electrically conductive body of the conductive line film electrically connected to .
The sacrificial separation layer of the functional bonded wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.
The heat-sink support of the functional bonded wafer may be formed using an electroplating process, such as electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) And is formed of a conductive material film.
The wafer bonding layer on the growth substrate and the support substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 300 ° C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.
The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic having at least 70% transmittance in the wavelength range of less than the lower forming nitride-based cladding layer region and the ohmic contact interface with the entire upper surface of the 600nm And a reflective electrode pad formed on the upper surface of the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.
The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.
The steps of annealing and surface treatment are introduced before and after each step as well as electrical and optical characteristics of the group III nitride-based semiconductor light-emitting diode device, as means for enhancing the mechanical bonding force between the respective layers. .
As described above, the group III nitride-based semiconductor light emitting diode of the vertical structure manufactured by the present invention has a p-type electrode structure composed of a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer The vertical current injecting in the vertical direction can be prevented and the horizontal current spreading in the vertical direction can be promoted to improve the overall performance of the LED. .
In addition, according to the method of manufacturing the group III nitride-based semiconductor light emitting diode of the vertical structure according to the present invention, wafer bending phenomenon and high-speed light emission of the single-chip light- It is possible to improve the processability and yield of a fab process.
Hereinafter, the manufacture of a group III nitride-based semiconductor optoelectronic device, which is a light emitting diode and a device manufactured according to the present invention, will be described in detail with reference to the accompanying drawings.
FIG. 5 is a cross-sectional view illustrating a group III nitride-based semiconductor light emitting diode device according to a first embodiment of the present invention.
As shown in the drawing, the lower nitride-based
In more detail,
The partial n-type ohmic
A side
The transparent
The transparent
The
The
The
The reflective current spreading
The reflective current spreading
The material
The material constituting the material
The wafer bonding layers 160 and 200 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 DEG C or higher. In this case, any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr and metallic silicide is formed.
The
In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-
On the other hand, before forming the transparent
6 is a cross-sectional view illustrating a group III nitride-based semiconductor light emitting diode device according to a second embodiment of the present invention.
As shown in the figure, the lower nitride-based
In more detail,
The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system : 260, 270) is formed in the lower nitride-based
A side
The transparent
The transparent
The
The
The
The reflective current spreading
The reflective current spreading
The material
The material constituting the material
The wafer bonding layers 160 and 200 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C or higher. In this case, any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr and metallic silicide is formed.
The
In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-
On the other hand, before forming the transparent
7 to 23 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.
7 is a cross-sectional view showing a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.
Referring to FIG. 7, a lower nitride-based
More specifically, the lower nitride-based
On the other hand, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device includes n-type conductive InGaN, GaN, AlInN, AlN , InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN monolayer, or a superlattice composed of nitride or carbon nitride of
Fig. 8 is a cross-sectional view showing a transparent current injection layer formed on an upper layer of a growth substrate wafer.
As shown in the figure, a transparent
9 is a cross-sectional view of a light emitting structure for a light emitting diode device having a transparent current injection layer formed thereon by performing isolation etching according to the shape and dimensions of a single vertical structure light emitting diode device.
As shown in the drawing, the
10 is a cross-sectional view of the first and second passivation layers formed on the upper layer of the light emitting structure for the light emitting diode device with the isolation etched.
As shown in FIG. 1, a passivation layer 110 (not shown) is formed on the
11 is a cross-sectional view of a first passivation layer formed in an upper portion of a light emitting structure for a light emitting diode device, in which a via hole is etched.
The
12 is a cross-sectional view of a via hole formed in the first passivation layer filled with the conductive barrier film.
As shown in the figure, the via
13 is a sectional view in which a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer are sequentially formed on the upper surface of the first passivation layer filled with the conductive barrier film.
As shown in the figure, the reflective current spreading
The material
The
The p-
14 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the present inventors.
14, a
The
The
The
The
15 is a schematic view illustrating a process of wafer-to-wafer bonding a multi-functional wafer including a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is formed and a support substrate, ≪ / RTI >
Referring to FIG. 15, a composite C having a wafer bonding interface is formed by a wafer bonding process between the
The wafer bonding is preferably carried out by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.
Further, a surface treatment and a heat treatment process may be introduced to improve the mechanical bonding force between the two
16 is a cross-sectional view illustrating a process for lift-off a growth substrate in a wafer bonded composite.
As shown, the process of lifting off the
17 is a cross-sectional view of the growth substrate separated from the wafer bonded composite and then exposing the lower nitride-based clad layer of the light emitting structure for light-emitting diode elements to the atmosphere.
As shown in the figure, after the
18 is a cross-sectional view of a composite in which surface irregularities are introduced on a lower nitride-based clad layer after a growth substrate of a growth substrate wafer is separated.
Referring to FIG. 18, as a process step after the
19 is a cross-sectional view of a composite in which a partial n-type ohmic contact electrode structure is formed on a part of the upper surface of the nitride-based clad layer on which surface irregularities have been formed.
Referring to FIG. 19, a partial n-type ohmic
In addition, the performance of the vertical-type light-emitting diode device may be improved before / after forming the partial n-type ohmic
20 is a cross-sectional view showing a process of cutting in a vertical direction to manufacture a single chip.
As shown, a mechanical sawing, laser scribing, or etching process 240 is performed between single chips to produce a unit chip light emitting diode device in a vertical direction .
21 is a cross-sectional view taken after cutting in a vertical direction to produce a single chip.
As shown, the
22 is a cross-sectional view illustrating a process for lifting off a support substrate in a wafer bonded composite.
As shown, the process of lifting off the
23 is a cross-sectional view showing a light emitting diode device of a vertical structure finally completed after removing the sacrificial layer in the wafer bonded composite.
23, the lower nitride-based
24 to 40 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.
24 is a cross-sectional view showing a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.
24, a lower nitride-based
More specifically, the lower nitride-based
On the other hand, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device includes n-type conductive InGaN, GaN, AlInN, AlN, and AlN having a thickness of 5 nm or less well known on the upper surface of the upper nitride- A single layer of InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer, p-type conductive InGaN having a thickness of 5 nm or less, GaN, AlInN, AlN, InN, AlGaN, AlInGaN monolayer, ) Element of the
Fig. 25 is a cross-sectional view showing a transparent current injection layer formed on an upper layer of a growth substrate wafer. Fig.
As shown in the figure, a transparent
FIG. 26 is a cross-sectional view of a light emitting structure for a light emitting diode device having a transparent current injection layer formed thereon by performing isolation etching according to the shape and dimensions of a single vertical structure light emitting diode device.
As shown in the drawing, the
FIG. 27 is a cross-sectional view illustrating first and second passivation layers formed on an upper portion of a light emitting structure for an isolation-etched light emitting diode device. FIG.
As shown in the figure, a passivation layer (not shown) which completely surrounds the upper surface and the side surface of the light emitting structure for a light emitting diode device, which is isolated by a predetermined shape and dimension, on the
28 is a cross-sectional view of a first passivation layer formed on an upper layer of the light emitting structure for a light emitting diode device, in which a via hole is etched.
The
29 is a cross-sectional view of a via hole formed in the first passivation layer filled with the conductive barrier film.
As shown in the figure, the via
30 is a sectional view in which a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer are sequentially formed on an upper surface of a first passivation layer filled with a conductive barrier film.
As shown in the figure, the reflective current spreading
The material
The
The p-
31 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the present inventors.
Referring to FIG. 31, a
The
The
The
The
32 is a cross-sectional view illustrating a process of wafer-to-wafer bonding a multi-functional wafer including a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is formed and a support substrate, ≪ / RTI >
Referring to FIG. 32, a composite body C having a wafer bonding interface is formed by a wafer bonding process between the
The wafer bonding is preferably carried out by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.
Further, a surface treatment and a heat treatment process may be introduced to improve the mechanical bonding force between the two
33 is a cross-sectional view of a process for lift-off a growth substrate in a wafer bonded composite.
As shown, the process of lifting off the
34 is a cross-sectional view of the nitride substrate-separated clad layer of the light emitting structure for a light emitting diode element exposed to the atmosphere after separating the growth substrate from the wafer bonded composite.
As shown in the figure, after the
35 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based clad layer after the growth substrate of the growth substrate wafer is separated.
Referring to FIG. 35, as a process step after the
Fig. 36 is a cross-sectional view of a composite in which a front n-type ohmic contact electrode structure is formed on a part of a top surface of a nitride-based clad layer on which surface irregularities are formed.
Referring to FIG. 36, the front n-type ohmic
In addition, the performance of the vertical LED elements before and after the formation of the front n-type ohmic
37 is a cross-sectional view showing a process of cutting in a vertical direction to manufacture a single chip.
As shown, a mechanical sawing, laser scribing, or etching process 240 is performed between single chips to produce a unit chip light emitting diode device in a vertical direction .
Fig. 38 is a cross-sectional view taken along a vertical direction to produce a single chip.
As shown, the
39 is a cross-sectional view illustrating a process for lift-off a support substrate in a wafer bonded composite.
As shown, the process of lifting off the
FIG. 40 is a cross-sectional view showing a light emitting diode device of a vertical structure finally completed after removing a sacrificial layer in a wafer bonded composite. FIG.
40, a lower nitride-based
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention as defined by the appended claims. something to do.
FIG. 1 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,
2 is a cross-sectional view for explaining a multi-quantum well structure and a superlattice structure,
3 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,
4 is a cross-sectional view showing a representative example of a group III nitride-based semiconductor light-emitting diode device having a conventional flip chip structure,
5 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a first embodiment of the present invention,
FIG. 6 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a second embodiment of the present invention,
7 to 23 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention,
24 to 40 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention,
41 is a cross-sectional view showing a manufacturing process of a group III nitride-based semiconductor light emitting diode having a vertical structure according to the prior art.
Claims (42)
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| KR20190042277A (en) * | 2017-10-16 | 2019-04-24 | 엘지이노텍 주식회사 | Semiconductor |
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| KR100969127B1 (en) | 2010-02-18 | 2010-07-09 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| KR102464028B1 (en) * | 2015-07-16 | 2022-11-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device package, and light emitting apparatus including the package |
| CN111384079B (en) | 2018-12-27 | 2024-04-05 | 乐金显示有限公司 | Display device |
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| KR20070042214A (en) * | 2005-10-18 | 2007-04-23 | 김성진 | Nitride-based light emitting diode and manufacturing of the same |
| KR20070083214A (en) * | 2006-02-20 | 2007-08-23 | 소니 가부시끼 가이샤 | Semiconductor light-emitting device and method of manufacturing the same |
| KR20070087770A (en) * | 2005-11-14 | 2007-08-29 | 삼성전자주식회사 | High-brightness nitride-based light emitting devices with large area and capability using aluminum nitride (aln)-based supporting substrate layers |
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| KR20040075002A (en) * | 2001-12-13 | 2004-08-26 | 렌슬러 폴리테크닉 인스티튜트 | Light-emitting diode with planar omni-directional reflector |
| KR20070042214A (en) * | 2005-10-18 | 2007-04-23 | 김성진 | Nitride-based light emitting diode and manufacturing of the same |
| KR20070087770A (en) * | 2005-11-14 | 2007-08-29 | 삼성전자주식회사 | High-brightness nitride-based light emitting devices with large area and capability using aluminum nitride (aln)-based supporting substrate layers |
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