KR20090111889A - Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods - Google Patents

Abstract

PURPOSE: A group III nitride based semiconductor light emitting diode of a vertical structure and a manufacturing method thereof are provided to improve yield of a fab process by preventing a wafer bending phenomenon in bonding wafers. CONSTITUTION: A group III nitride based semiconductor light emitting diode of a vertical structure includes a partial n-type ohmic contact electrode structure(230), a light emitting structure, a p-type electrode structure(400), and a heat sink supporting bar(190). The light emitting structure is formed by laminating a bottom nitride based clad layer, a nitride based active layer, and a top nitride based clad layer on a bottom part of the partial n-type ohmic contact electrode structure. The p-type electrode structure is formed in a bottom layer part of the light emitting structure, and includes a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer.

Description

Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods

The present invention relates to a vertical structure using an epitaxial group 3 nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). A group III-nitride semiconductor light emitting diode device having a structure and a method of manufacturing the same. More specifically, a growth substrate wafer on which a light emitting structure for a group III nitride semiconductor light emitting diode device including a p-type electrode structure is grown on an upper layer of a growth substrate, and a functional bonded wafer manufactured by the present inventors. The present invention provides a method for manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure by combining a wafer-to-wafer bonding process and a wafer-off process. .

Recently, a light emitting diode (LED) device using a Group III nitride-based semiconductor single crystal is an In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1 used as a nitride-based active layer). The material system has a wide range of energy band gaps. In particular, according to the composition of In is known as a material capable of emitting light in all areas of visible light, and according to the composition of Al can generate ultraviolet light, which is an ultra-short wavelength region, and the light emitting diodes manufactured using the same are used for display plates, display devices, Development of high quality light emitting diodes is very important in the application area of backlight, medical light source including white light source and the like, and the range of application is gradually expanded and increased.

Since a light emitting diode (hereinafter, referred to as a group III nitride semiconductor light emitting diode) device made of such a group III nitride semiconductor material system is generally grown on top of an insulating growth substrate (typically, sapphire), another group 3 Since two electrodes facing each other of the growth substrate cannot be provided like the Group-5 compound semiconductor light emitting diode device, two electrodes of the LED device must be formed on the crystal-grown semiconductor material system. A conventional structure of such a group III-nitride semiconductor light emitting diode device is schematically illustrated in FIGS. 1 to 4.

First, referring to FIG. 1, a group III-nitride semiconductor light emitting diode device includes a lower nitride-based cladding made of a sapphire growth substrate 10 and an n-type conductive semiconductor material sequentially formed on an upper surface of the growth substrate 10. A layer 20, a nitride based active layer 30 and an upper nitride based cladding layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 may be formed of an n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer, and the nitride based active layer 30 Is composed of a multi-quantum well-structured semiconductor in which Group III-nitride-based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) Can be. In addition, the upper nitride-based cladding layer 40 may be formed of a p-type In x Al y Ga 1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layer 20, 30, or 40 formed of the group III-nitride-based semiconductor single crystal is a device such as MOCVD, MBE, HVPE, sputter, or PLD. Can be grown using. At this time, prior to growing the n-type In x Al y Ga 1-xy N semiconductor, which is the lower nitride-based cladding layer 20, in order to improve lattice matching with the sapphire growth substrate 10, such as AlN or GaN The buffer layer 201 may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both electrodes of the LED element should be formed on the same upper surface of the single crystal semiconductor growth direction. For this purpose, the upper nitride-based cladding layer 40 and the nitride-based A portion of the active layer 30 is etched (ie, etched) to expose a portion of the upper nitride cladding layer 20 to the atmosphere, and the n-type In, the lower nitride-based cladding layer 20 exposed to the atmosphere, is exposed. An n-type ohmic contact interface electrode and an electrode pad 80 are formed on the x Al y Ga 1-xy N semiconductor upper surface.

In particular, since the upper nitride-based cladding layer 40 has a relatively high sheet resistance due to low carrier concentration and small mobility, prior to forming the p-type electrode 70, There is a need for additional materials capable of forming the ohmic contact current spreading layer 501. In contrast, US Pat. No. 5,563,422 discloses a p-type In x Al y Ga 1-xy N (40) half, which is an upper nitride-based cladding layer 40 positioned on an upper layer of a light emitting structure for a group III nitride semiconductor light emitting diode device. Nickel-oxidized to form an ohmic contact current spreading layer 501 that forms an ohmic contact interface with a low specific contact resistance in the vertical direction before forming the p-type electrode 80 on the upper surface of the conductor. A material composed of gold (Ni-O-Au) has been proposed.

The ohmic contact current spreading layer 501 is disposed on the upper surface of the p-type In x Al y Ga 1-xy N semiconductor, which is the upper nitride-based cladding layer 40, while simultaneously improving current spreading in the horizontal direction. In addition, by forming an ohmic contact interface having a low specific contact resistance in the vertical direction, an effective current injection can be performed, thereby improving the electrical characteristics of the light emitting diode device. However, the ohmic contact current spreading layer 501 composed of oxidized nickel-gold has a low transmittance of 70% on average even after the heat treatment, and this low light transmittance is when the light generated by the light emitting diode device is emitted to the outside. It absorbs large amounts of light, reducing the overall external luminous efficiency.

As described above, in order to obtain a high-brightness light emitting diode device through high light transmittance of the ohmic contact current spreading layer 501, various kinds of materials including the recently oxidized nickel-gold (Ni-O-Au) material Instead of the ohmic contact current spreading layer 501 formed of a transparent metal or alloy, a method of forming a transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which has a transmittance of 90% or more, has been proposed. However, the transparent conductive material is a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is the upper nitride-based cladding layer 40 (~ 7.5 eV or more). Small work function (4.7 ~ 6.1eV), and direct deposition on top of p-type In x Al y Ga 1-xy N semiconductor and subsequent process including heat treatment have a large specific contact resistance instead of ohmic contact interface. The formation of a schottky contact interface requires a new transparent conductive material or fabrication process that can solve the above problems.

The transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor of the upper nitride-based cladding layer 40. In order to be able to fulfill its role as a good ohmic contact current spreading layer 501, recently, YK Su et al. Have described the transparent electroconductive material described above in various documents as the p-type In x Al y as the upper nitride-based cladding layer 40. Prior to the direct deposition of Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductors, a current spreading layer having an ohmic contact interface via a superlattice structure 501) Forming technology is proposed.

As shown in FIG. 2, the superlattice structure includes two wells (b1) and a barrier (a1) of a well (b1) and a barrier (a1) in a multi-quantum well structure. Although the points repeated periodically in one pair are similar, the thickness of the barrier (a1) of the multi-quantum well structure is relatively thick compared to the thickness of the well (b1), while the two layers constituting the superlattice structure ( a2 and b2) both have a thin thickness of 5 nm or less. Due to the above characteristics, the multi-quantum well structure is different from the role of confining electrons or holes, which are carriers, to the well b1 located between the thick barriers a1. It helps to facilitate transport.

Referring to FIG. 3, a light emitting diode device including an ohmic contact current spreading layer 60 using a superlattice structure proposed by YK Su et al. Is described with reference to FIG. 3. 10) an upper nitride-based cladding layer formed of a lower nitride-based cladding layer 20 formed of an n-type conductive semiconductor material, an nitride-based active layer 30, and a p-type conductive semiconductor material formed on an upper surface of the growth substrate 10 ( 40), and superlattice structure 90. In particular, the superlattice structure 90 is in-situ with the same growth equipment as the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40. To grow and form. The lower nitride-based cladding layer 20 may be formed of an n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer, and the nitride based active layer 30 Is a group III-nitride based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) semiconductor multilayer composed of different composition of multi-quantum well structure. have. The upper nitride cladding layer 40 may be formed of a p-type In x Al y Ga 1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. In addition, the superlattice structure 90 is a group III-nitride-based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) semiconductor or other conductive plate composed of different compositions. A group III-nitride-based In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor layer having a dopant may be formed.

P-type In x Al y Ga 1-xy N (0 ≦ x, 0), which is the upper nitride-based cladding layer 40, according to the composition and dopant type of the superlattice structure 90 ≤y, x + y≤1) Lower the dopant activation energy of the semiconductor to increase the net effective hole concentration, or through quantum mechanical tunneling conduction through energy bandgap engineering It is known to form an ohmic contact interface through a mechanical tunneling transport phenomenon.

In general, the lower nitride-based cladding layer / nitride-based active layer / the upper nitride-based cladding layer / superlattice structure 20, 30, 40, or 90 formed of the group III-nitride semiconductor single crystal is MOCVD, MBE, HVPE, or sputter. Or a device such as a PLD. At this time, prior to growing the n-type In x Al y Ga 1-xy N semiconductor of the lower nitride-based cladding layer 20, in order to improve lattice matching with the sapphire growth substrate 10, such as AlN or GaN The buffer layer 201 may be formed therebetween.

However, the material used for the ohmic contact current spreading layer 501 or 60 made of a transparent electroconductive material positioned on the upper nitride-based cladding layer 40 has a trade-off relationship between transmittance and electrical conductivity. have. In other words, when the thickness of the ohmic contact current spreading layer 501 or 60 is reduced to increase the transmittance, the conductivity decreases conversely, resulting in an increase in the series resistance of the group III nitride semiconductor light emitting diode device. Therefore, there existed a problem that it became the cause of the element reliability fall.

Therefore, a method of not using an ohmic contact current spreading layer composed of a transparent conductive material, and in the case of an optically transparent growth substrate, an electrically conductive material having high reflectance on the upper nitride-based cladding layer of the light emitting structure for a light emitting diode device A structure for forming the configured ohmic contact current spreading layer 502 may be considered. This is a cross-sectional view of the group III-nitride semiconductor light emitting diode device of the flip-chip structure shown in FIG.

As shown, the group III nitride semiconductor light emitting diode device of the flip chip structure is formed of an optically transparent sapphire growth substrate 10 and an n-type conductive semiconductor material sequentially grown on the upper surface of the growth substrate 10. The nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40 made of a p-type conductive semiconductor material are included. An ohmic contact current spreading layer 502 formed of an electrically conductive material having a high reflectance is formed on the upper nitride-based cladding layer 40, and light generated from the nitride-based active layer 30, which is a light emitting structure for a light emitting diode device, is formed. Is reflected in the opposite direction using the ohmic contact current spreading layer 502 having a high reflectance, and emits light toward the optically transparent growth substrate 10.

In general, a light emitting diode device that is widely used using a group III nitride semiconductor is generated using ultraviolet light, blue light, or green light using InGaN, AlGaN, etc. in the nitride active layer 30, and is used as a growth substrate 10. ) Is sapphire. Since the sapphire used as the growth substrate 10 is a material having a fairly wide band gap, all of the sapphire is transparent to the light emitted from the group III nitride semiconductor LED device. For this reason, in particular, in the group III-nitride semiconductor light emitting diode device, the above-described flip chip structure can be said to be a very effective means. However, the upper nitride cladding layer 40 having p-type conductivity forms an ohmic contact interface and has high reflectance. The substance having is limited. In general, metal materials having high reflectivity are silver (Ag), aluminum (Al), and rhodium (Rh). The silver (Ag) and rhodium (Rh) and alloys associated with them exhibit good ohmic contact interfaces with the upper nitride based cladding layer 40, but the metals or alloys of these materials emit light for the light emitting diode device. There is a problem in that a diffusion phenomenon of material movement occurs inside the structure, and the operating voltage of the light emitting diode device is lowered and the reliability is lowered. In addition, thermally unstable silver (Ag), rhodium (Rh), and their associated alloys exhibit low reflectance to ultraviolet light, which is a short wavelength region of 400 nm or less, resulting in ohmic contact current of the light emitting diode device for ultraviolet light. It is not desirable as the spreading layer 502 material. On the other hand, although the aluminum (Al) and its related alloys have a high reflectance up to the ultraviolet region, they can be used because they form a schottky contact interface with the upper nitride-based cladding layer 40 having a p-type conductivity, which is not a desirable ohmic contact interface. There is no state. Therefore, in order to realize a group III-nitride semiconductor light emitting diode device having a flip chip structure, an ohmic contact current spreading layer having an ohmic contact interface and a high reflectance on the upper nitride cladding layer 40 having p-type conductivity ( There is a need to develop materials or structures capable of forming 502.

On the other hand, the group III nitride-based semiconductor LED device of the general structure and the flip chip structure is a horizontal structure, and is manufactured on the sapphire growth substrate 10 having low thermal conductivity and electrical insulation, so that it inevitably occurs when the LED device is driven. There is a problem in that it is difficult to discharge a large amount of heat to reduce the overall characteristics of the device.

In addition, as shown and described, in order to form two ohmic contact electrodes and electrode pads, a part of the nitride-based active layer 40 needs to be removed, and thus the light emitting area is reduced, making it difficult to realize a high quality light emitting diode device. The smaller number of chips in a sized wafer lags behind the cost competitiveness.

In addition, after the manufacturing process of the light emitting diode device on the wafer is completed, lapping, polishing, scribing, sawing, and braking for separating into a single light emitting diode device Due to the inconsistency between the cleavage plane of the sapphire growth substrate 10 and the group III-nitride-based semiconductor during mechanical processes such as breaking, the defect rate is high and the overall product yield is deteriorated.

Recently, to solve the problem of the group III-nitride semiconductor light emitting diode device having a horizontal structure, the growth substrate 10 is removed so that two ohmic contact electrodes and electrode pads face the upper and lower portions of the light emitting diode device. A group III-nitride-based semiconductor light emitting diode device having a vertical structure in which a current is applied from outside and flows in one direction to improve luminous efficiency is disclosed in many documents (US Patent, US 6,071,795, US 6,335,263, US 20060189098). have.

41 is a cross-sectional view showing a general manufacturing process of a group III-nitride semiconductor light emitting diode device having a vertical structure as an example of the prior art. As shown in FIG. 41, in the method of manufacturing a light emitting diode device having a general vertical structure, the light emitting diode light emitting device is formed on the sapphire growth substrate 10 using MOCVD or MBE growth equipment, and then light emitting the light emitting diode device. After forming the reflective p-type ohmic contact electrode structure 90 on the upper nitride-based cladding layer 50 on the uppermost layer of the structure, the support substrate wafer prepared separately from the growth substrate wafer is soldered at a temperature of less than 300 ° C. After solder bonding, the sapphire growth substrate is removed to manufacture a light emitting diode device having a vertical structure.

In more detail with reference to FIG. 41, first, an undoped GaN or InGaN buffer layer 20, a lower nitride-based cladding layer 30, using MOCVD growth equipment on the sapphire substrate 10 is formed. After forming the light emitting structure for the light emitting diode device in which the nitride-based active layer 40 formed of InGaN and GaN and the upper nitride-based cladding layer 50 were sequentially grown (FIG. 41A), an upper portion of the upper nitride-based cladding layer 50 was formed. The reflective p-type ohmic contact electrode structure 90 and the soldering reaction prevention layer 100 are sequentially formed to prepare a growth substrate wafer (FIG. 41B). Then, as shown in FIG. 41C, two ohmic contact electrodes 120 and 130 are formed on each of the upper and lower portions of the electrically conductive support substrate 110, and a soldering material for bonding the light emitting structure for the light emitting diode device ( 140 is deposited to prepare a support substrate wafer. Then, the grown substrate wafer The soldering material diffusion barrier layer 100 and the soldering material 140 of the substrate wafer are brought into contact with each other to bond the soldering wafers as shown in FIG. 41D. Subsequently, the sapphire growth substrate 10 is irradiated with a strong energy laser on the back surface of the sapphire growth substrate 10, which is a rear surface of the growth substrate wafer on which the united plurality of light emitting diode elements are manufactured. The undoped GaN or InGaN buffer layer 20 which was separated ( laser lift off ; LLO ) and damaged by the laser was etched to the front until the lower nitride based cladding layer 30 was exposed using a dry etching process. 41E, an n-type ohmic contact electrode structure 80 is formed on the lower nitride-based cladding layer 30 corresponding to the plurality of light emitting diode elements (FIG. 41F). Finally, the plurality of light emitting diode elements and the conductive support substrate 110 may be mechanically wrapped, polished, scribed, sawed, and broken. The cleavage process is performed to separate the united light emitting diode device (FIG. 41G).

However, the conventional vertical light emitting diode manufacturing process technology has a number of problems as described below, it is difficult to secure a large amount of a secure light emitting diode device of a single vertical structure. That is, since the soldering wafer bonding is performed within a low temperature range, a subsequent high temperature process cannot be performed at a higher temperature than the soldering wafer bonding temperature, and thus it is difficult to implement a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are bonded between the wafers (dissimilar wafer), the thermal stress is generated during the bonding, which has a fatal effect on the reliability of the light emitting diode device.

More recently, in order to solve the problems occurring in the vertical group III-nitride semiconductor light emitting diode device manufactured by the soldering wafer bonding described above, Cu, Ni, or the like instead of the electroconductive support substrate formed by the soldering wafer bonding. A technique for forming a thick metal film on the reflective p-type ohmic contact electrode structure 90 by an electroplating process has been developed and partially used for product production.

However, subsequent processes arising in the vertical structured light emitting diode manufacturing process combined with the electroplating process, ie, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, and braking. When this is done, problems such as deterioration of the device and occurrence of defects still remain problems to be solved.

The present invention is made in recognition of the above-mentioned problems, a group represented by the formula In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) on the growth substrate A growth substrate wafer having a p-type electrode structure composed of a light emitting structure for a group III nitride semiconductor light emitting diode device, a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer. The present invention relates to a light emitting diode device having a vertical structure and a method of manufacturing the same by combining a functional bonding wafer including a support substrate devised by the present inventors.

More specifically, a wafer-to-wafer bonding method is performed in which a growth substrate wafer and a functional bonded wafer, on which a light emitting structure for group III-nitride semiconductor light emitting diode devices including a p-type electrode structure is grown, are grown on top of a growth substrate. Next, the growth substrate and the support substrate are sequentially removed through a substrate lift-off process to provide a group III-nitride semiconductor light emitting diode device having a vertical structure and a method of manufacturing the same.

In order to achieve the above object,

A partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device formed of a lower nitride based cladding layer, a nitride based active layer, and an upper nitride based cladding layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer formed under the light emitting structure; It provides a vertical group III-nitride semiconductor light emitting diode device comprising a; heat sink support formed on the lower layer of the p-type electrode structure.

The partial n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) may have a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, each having at least 50% reflectance in the wavelength region of less than 600nm Consists of a reflective ohmic contact electrode and an electrode pad.

The transparent current injection layer forms an ohmic contacting interface with the upper nitride-based cladding layer to facilitate easy current injecting in the vertical direction.

The transparent current injection layer is formed of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on an upper surface of the light emitting structure for a light emitting diode device.

The first passivation layer protects an upper surface of the light emitting structure for the light emitting diode device, and prevents the material constituting the reflective current spreading layer from diffusing into the transparent current injection layer and the light emitting structure. (diffusion barrier)

The first passivation layer is made of a material that is electrically insulating and has a transmittance of 70% or more in a wavelength band of 600 nm or less.

In the first passivation layer, 50% or less of the entire area is patterned in the form of via-holes, and then the transparent current injection layer and the reflective current spreading layer are disposed on the upper and lower surfaces of the first passivation layer. It is filled with a conductive wire to connect to.

The reflective current spreading layer spreads current in the horizontal direction from the upper surface of the first passivation layer and conducts current to the transparent current injection layer through a conductive wire film, and emits light for the light emitting diode device. It reflects the light generated in the structure in the opposite direction.

The reflective current spreading layer is formed of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on an upper surface of the first passivation layer.

The heatsink support is an electroconductive material film having a thickness of at least 10 micrometers or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. Is formed.

In the group III-nitride semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure, in addition to preventing current concentration in the vertical direction and acting as a reflector for light, prevents diffusion of materials, improves bonding and bonding between materials, Or it is preferable to include a separate thin film layer that can perform the role of preventing the oxidation of the material.

On the other hand, the light emitting structure for the group III-nitride semiconductor light emitting diode device is a n-type conductive InGaN, GaN, AlInN, AlN, having a thickness of 5 nm or less well known prior to forming the transparent current injection layer InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer, other dopants and compositions It may also include a superlattice consisting of a nitride or carbon nitride of the group 2, 3, or 4 elements having the element ()).

In order to achieve the above another object,

A front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device formed of a lower nitride based cladding layer, a nitride based active layer, and an upper nitride based cladding layer below the front n-type ohmic contact electrode structure; A p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer formed under the light emitting structure; It provides a vertical group III-nitride semiconductor light emitting diode device comprising a; heat sink support formed on the lower layer of the p-type electrode structure.

The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic having at least 70% transmittance in the wavelength range of less than the lower forming nitride-based cladding layer region and the ohmic contact interface with the entire upper surface of the 600nm It is formed on the upper surface of the contact electrode and the transparent ohmic contact electrode and comprises a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

The transparent current injection layer forms an ohmic contacting interface with the upper nitride-based cladding layer to facilitate easy current injecting in the vertical direction.

The transparent current injection layer is formed of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on an upper surface of the light emitting structure for a light emitting diode device.

The first passivation layer protects an upper surface of the light emitting structure for the light emitting diode device, and prevents the material constituting the reflective current spreading layer from diffusing into the transparent current injection layer and the light emitting structure. (diffusion barrier)

The first passivation layer is made of a material that is electrically insulating and has a transmittance of 70% or more in a wavelength band of 600 nm or less.

In the first passivation layer, 50% or less of the entire area is patterned in the form of via-holes, and then the transparent current injection layer and the reflective current spreading layer are disposed on the upper and lower surfaces of the first passivation layer. It is filled with a conductive wire to connect to.

The reflective current spreading layer spreads current in the horizontal direction from the upper surface of the first passivation layer and conducts current to the transparent current injection layer through a conductive wire film, and emits light for the light emitting diode device. It reflects the light generated in the structure in the opposite direction.

The reflective current spreading layer is formed of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on an upper surface of the first passivation layer.

The heat-sink support is an electroconductive material film having a thickness of at least 10 micrometers or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. Is formed.

In the group III-nitride-based semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure prevents diffusion of materials in addition to the current blocking in the vertical direction and the reflecting of light. barrier), it is preferable to include a separate thin film layer that can serve to improve the bonding and bonding between materials, or to prevent the oxidation of the material.

On the other hand, the light emitting structure for the group III-nitride semiconductor light emitting diode device is a n-type conductive InGaN, GaN, AlInN, AlN, having a thickness of 5 nm or less well known prior to forming the transparent current injection layer InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer, other dopants and compositions It may also include a superlattice consisting of a nitride or carbon nitride of the group 2, 3, or 4 elements having the element ()).

In a preferred aspect for achieving the above object, the present invention provides a light emitting diode device manufacturing method of the vertical structure using a light emitting structure for group III nitride semiconductor light emitting diode device,

Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device comprising a lower nitride-based cladding layer including a buffer layer, a nitride-based active layer, and an upper nitride-based cladding layer is sequentially grown on the growth substrate; Forming a p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer on an upper surface of the upper nitride-based cladding layer, which is a top layer of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of the support substrate; Forming a composite by wafer bonding the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner; Separating the growth substrate of the growth substrate wafer from the composite; Forming surface irregularities and a partial n-type ohmic contact electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; And separating the support substrate of the functional bonding wafer from the composite in which the growth substrate is removed.

The light emitting structure for group III-nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, which have a thickness of 5 nm or less, well-known before forming the transparent current injection layer. AlInGaN, SiC, SiCN, MgN, ZnN single layer, p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer with other dopants and composition elements It may also include a superlattice composed of nitrides or carbon nitrides of group 2, 3, or 4 elements.

The p-type electrode structure (p -type electrode system) the configuration and the transparent current injection layer and the reflective current spreading layer, which is filled with the first passivation layer patterned to form a via hole electrically conductive body of the conductive line film electrically connected to It is.

The sacrificial separation layer of the functionally bonded wafer is made of a material that is advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The heat-sink support of the functionally bonded wafers may be formed by electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or at least 10 microns in thickness. It is formed of a conductive material film.

The wafer bonding layer on the growth substrate and the support substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

Part of n-type ohmic contact electrode structure (partial n -type ohmic contacting electrode system) it may have a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, having a reflectivity of 50% or more reflectivity in the wavelength region of less than 600nm It consists of an ohmic contact electrode and an electrode pad.

The process of separating the growth substrate and the support substrate uses a thermal-chemical decomposition reaction by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or a photon beam having strong energy.

In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. It is desirable to.

In a preferred aspect for achieving the above another object, the present invention provides a light emitting diode device manufacturing method of the vertical structure using a light emitting structure for group III nitride semiconductor light emitting diode device,

Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device comprising a lower nitride-based cladding layer including a buffer layer, a nitride-based active layer, and an upper nitride-based cladding layer is sequentially grown on the growth substrate; Forming a p-type electrode structure including a transparent current injection layer, a passivation layer, and a reflective current spreading layer on an upper surface of the upper nitride based cladding layer, which is a top layer of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of the support substrate; Forming a composite by wafer bonding the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner; Separating the growth substrate of the growth substrate wafer from the composite; Forming surface irregularities and a front n-type ohmic contact electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; And separating the support substrate of the functional bonding wafer from the composite in which the growth substrate is removed.

The light emitting structure for group III-nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, which have a thickness of 5 nm or less, well-known before forming the transparent current injection layer. AlInGaN, SiC, SiCN, MgN, ZnN single layer, p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer with other dopants and composition elements It may also include a superlattice composed of nitrides or carbon nitrides of group 2, 3, or 4 elements.

The p-type electrode structure (p -type electrode system) the configuration and the transparent current injection layer and the reflective current spreading layer, which is filled with the first passivation layer patterned to form a via hole electrically conductive body of the conductive line film electrically connected to It is.

The sacrificial separation layer of the functionally bonded wafer is made of a material that is advantageous for separating the support substrate. In this case, when the photon-beam of a specific wavelength band having a strong energy is irradiated and separated, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, or wet etching solution (wet) In the case of etching and separating in the etching solution) is formed of any one selected from the group consisting of Au, Ag, Pd, SiO2, SiNx.

The heat-sink support of the functionally bonded wafers may be formed by electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or at least 10 microns in thickness. It is formed of a conductive material film.

The wafer bonding layer on the growth substrate and the support substrate is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr.

The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system) is transparent ohmic having at least 70% transmittance in the wavelength range of less than the lower forming nitride-based cladding layer region and the ohmic contact interface with the entire upper surface of the 600nm It is formed on the upper surface of the contact electrode and the transparent ohmic contact electrode and comprises a reflective electrode pad having a reflectance of 50% or more in a wavelength band of 600 nm or less.

The process of separating the growth substrate and the support substrate uses a thermal-chemical decomposition reaction by chemical-mechanical polishing (CMP), chemical etching decomposition using a wet etching solution, or a photon beam having strong energy.

In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. It is desirable to.

As described above, the vertical group III-nitride semiconductor light emitting diode manufactured by the present invention comprises a p-type electrode structure composed of a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer. Therefore, when driving a vertical light emitting diode device, it prevents unidirectional vertical current injection and promotes horizontal current spreading to improve the overall performance of the LED. Can be.

In addition, according to the method for manufacturing a group III-nitride semiconductor light emitting diode having a vertical structure according to the present invention, there is no wafer bending during wafer-to-wafer bonding and no damage to the light emitting structure of a single chip light emitting diode device. Since it can be manufactured, there is an effect that can improve the processability and yield of the fab process.

Hereinafter, with reference to the accompanying drawings, it will be described in more detail with respect to the light emitting diode and the device manufacturing a group III nitride-based semiconductor optoelectronic device manufactured according to the present invention.

5 is a cross-sectional view showing a first embodiment of a group III-nitride semiconductor light emitting diode device having a vertical structure manufactured according to the present invention.

As shown, the lower nitride-based cladding layer 20, the nitride-based active layer 30, the upper nitride-based cladding layer 40 having the surface irregularities 220 on the lower surface of the partial n-type ohmic contact electrode structure 230, A p-type electrode structure 400, a material diffusion barrier layer 150, which is composed of a transparent current injection layer 100, a first passivation layer 110, a conductive line film body 130, and a reflective current spreading layer 140. A light emitting diode, which is a vertical light emitting device including two wafer bonding layers 160 and 200 and a heat sink support 190, is formed. Further, the lower nitride based cladding layer 20, the nitride based active layer 30, the upper nitride based cladding layer 40, and the transparent current are provided to protect the vertical light emitting diode device from external conductive impurities and moisture. A second passivation layer 280 is formed that completely surrounds the injection layer 100 and is continuously connected to the first passivation layer 110.

In more detail, the unevenness 220 is formed on the surface of the lower nitride-based cladding layer 20, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 30 to the outside. A partial n-type ohmic contact electrode structure 230 is formed in a portion of the upper surface of the lower nitride based cladding layer 20.

The partial n-type ohmic contact electrode structure 230 includes reflective ohmic contact electrodes and electrode pads having a reflectivity of 50% or more in a wavelength band of 600 nm or less in a portion of the upper surface of the lower nitride-based cladding layer 20. In this case, the partial n-type ohmic contact electrode structure 230 is made of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metallic silicide. It is formed of any one selected from the group.

 A second passivation layer 280 is formed on a side surface of the vertical light emitting diode device to protect the nitride based active layer 30 exposed through the side surface. In this case, the side second passivation layer 280 is formed of electrically insulating metallic oxide or metallic nitride, and specifically, is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3. .

The transparent current injection layer 100 of the p-type electrode structure 400 on the lower surface of the upper nitride cladding layer 40 forms an ohmic contact interface with the upper nitride cladding layer 20 to facilitate the vertical direction. It serves to inject current.

The transparent current injection layer 100 of the p-type electrode structure 400 is formed of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on the upper surface of the light emitting structure for the light emitting diode device. In this case, the transparent current injection layer 100 of the p-type electrode structure 400 is Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, It is formed of any one selected from the group consisting of ZnO, Ga, Ga2O3, In, ITO, In2O3, Sn, SnO2.

The first passivation layer 110 of the p-type electrode structure 400 protects an upper surface of the light emitting structure for the light emitting diode device, and at the same time, the material forming the reflective current spreading layer 140 is transparent. It serves to prevent diffusion movement into the current injection layer 100 and the light emitting structure (diffusion barrier).

The first passivation layer 110 of the p-type electrode structure 400 is made of a material that is electrically insulating and has a transmittance of 70% or more in a wavelength band of 600 nm or less. In this case, the first passivation layer 110 of the p-type electrode structure 400 is formed of metal oxide or metal nitride, and specifically selected from the group consisting of SiNx, SiO2, Al2O3. It is formed of either.

In the first passivation layer 110 of the p-type electrode structure 400, 50% or less of the entire area is patterned in the form of via-holes, and then located on the upper and lower surfaces of the first passivation layer 110. The transparent current injection layer 100 and the reflective current spreading layer 140 are filled with a conductive line film 130 that electrically connects them. At this time, the conductive wire film 130 is Pt, Pd, Au, Al, Rh, Ag, Ni, Cu, Ru, V, Cr, Re, Nb, Ir, Zn, Sn, In, Si, Ge, Ga, It is formed of any one selected from the group consisting of Mn, Fe, Mo, W, Ta, Ti, Zr, Sc, Hf.

The reflective current spreading layer 140 of the p-type electrode structure 400 has a current spreading in a horizontal direction from the upper surface of the first passivation layer 110 and the transparency through the conductive line film 130. At the same time, it conducts a current to the current injection layer 100 and reflects light generated in the light emitting structure for the light emitting diode device in the opposite direction.

The reflective current spreading layer 140 of the p-type electrode structure 400 is formed of an electrically conductive material having a reflectivity of 80% or more on the upper surface of the first passivation layer 110 in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 140 is formed of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide. It is formed of any one selected.

The material diffusion barrier layer 150 serves to prevent material diffusion movement occurring between the p-type electrode structure 400 and the wafer bonding layers 160 and 200 when manufacturing a vertical light emitting diode device. do.

The material constituting the material diffusion barrier layer 150 is determined according to the type of material constituting the p-type electrode structure 400 and the wafer bonding layers 160 and 200, but, for example, Pt, Pd, and Cu , Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, is formed of any one selected from the group consisting of metal silicide (metallic silicide).

The wafer bonding layers 160 and 200 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

The heat sink support 190 is formed of an electroconductive material film having a thickness of at least 10 micrometers by using electro-plating, physical vapor deposition (PVD), and chemical vapor deposition (CVD). In this case, it is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti, Ta, and metal silicide.

In the group III-nitride semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure 400 is a diffusion of a material, in addition to the role of current blocking in the vertical direction and reflecting light (light) It is desirable to include a separate thin film layer that can serve as a diffusion barrier, to improve the binding and bonding between the materials, or to prevent the oxidation of the material.

On the other hand, the light emitting structure for the group III-nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN having a thickness of less than 5nm prior to forming the transparent current injection layer 100 , AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer with other dopants It may also include a superlattice composed of nitride or carbon nitride of group 2, 3, or 4 elements having a composition element.

6 is a cross-sectional view showing a second embodiment of a group III-nitride semiconductor light emitting diode device having a vertical structure manufactured according to the present invention.

As shown, the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40 having surface unevenness 220 on the lower surfaces of the front n-type ohmic contact electrode structures 260 and 270. ), A p-type electrode structure 400 composed of a transparent current injection layer 100, a first passivation layer 110, a conductive line film body 130, and a reflective current spreading layer 140, and a material diffusion barrier layer 150. ), A light emitting diode which is a vertical light emitting device including two wafer bonding layers 160 and 200 and a heat sink support 190 is formed. Further, the lower nitride based cladding layer 20, the nitride based active layer 30, the upper nitride based cladding layer 40, and the transparent current are provided to protect the vertical light emitting diode device from external conductive impurities and moisture. A second passivation layer 280 is formed that completely surrounds the injection layer 100 and is continuously connected to the first passivation layer 110.

In more detail, the unevenness 220 is formed on the surface of the lower nitride-based cladding layer 20, which is an emission surface, in order to effectively emit light generated from the nitride-based active layer 30 to the outside. Front n-type ohmic contact electrode structures 260 and 270 are formed in a portion of the upper surface of the lower nitride-based cladding layer 20.

The front n-type ohmic contact electrode structure (full n -type ohmic contacting electrode system : 260, 270) is formed in the lower nitride-based cladding layer 20, the entire region and the ohmic contact interface of the top surface and 70 at the wavelength band of 600nm or less A transparent ohmic contact electrode 260 having a transmittance of about% or more and a reflective electrode pad 270 having a reflectance of 50% or more at a wavelength band of 600 nm or less are formed on an upper surface of the transparent ohmic contact electrode 260. In this case, the transparent ohmic contact electrode 260 of the front n-type ohmic contact electrode structure includes Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, It is formed of any one selected from the group consisting of ZnO, Ga, Ga2O3, In, ITO, In2O3, Sn, SnO2, the n-type ohmic contact electrode structure 270 of the front n-type ohmic contact electrode structure is Al, Ag, Rh, It is formed of any one selected from the group consisting of Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, metallic silicide.

 A second passivation layer 280 is formed on a side surface of the vertical light emitting diode device to protect the nitride based active layer 30 exposed through the side surface. In this case, the side second passivation layer 280 is formed of electrically insulating metallic oxide or metallic nitride, and specifically, is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3. .

The transparent current injection layer 100 of the p-type electrode structure 400 on the lower surface of the upper nitride based cladding layer 40 forms an ohmic contact interface with the upper nitride based cladding layer 20 to facilitate an easy current in the vertical direction. It is responsible for injecting current.

The transparent current injection layer 100 of the p-type electrode structure 400 is made of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on the upper surface of the light emitting diode device. In this case, the transparent current injection layer 100 of the p-type electrode structure 400 is Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, It is formed of any one selected from the group consisting of ZnO, Ga, Ga2O3, In, ITO, In2O3, Sn, SnO2.

The first passivation layer 110 of the p-type electrode structure 400 protects an upper surface of the light emitting structure for the light emitting diode device, and at the same time, the material forming the reflective current spreading layer 140 is transparent. It serves to prevent diffusion movement into the current injection layer 100 and the light emitting structure (diffusion barrier).

The first passivation layer 110 of the p-type electrode structure 400 is made of a material that is electrically insulating and has a transmittance of 70% or more in a wavelength band of 600 nm or less. In this case, the first passivation layer 110 of the p-type electrode structure 400 is formed of metal oxide or metal nitride, and specifically selected from the group consisting of SiNx, SiO2, Al2O3. It is formed of either.

In the first passivation layer 110 of the p-type electrode structure 400, 50% or less of the entire area is patterned in the form of via-holes, and then located on the upper and lower surfaces of the first passivation layer 110. The transparent current injection layer 100 and the reflective current spreading layer 140 are filled with a conductive line film 130 that electrically connects them. At this time, the conductive wire film 130 is Pt, Pd, Au, Al, Rh, Ag, Ni, Cu, Ru, V, Cr, Re, Nb, Ir, Zn, Sn, In, Si, Ge, Ga, It is formed of any one selected from the group consisting of Mn, Fe, Mo, W, Ta, Ti, Zr, Sc, Hf.

The reflective current spreading layer 140 of the p-type electrode structure 400 has a current spreading in a horizontal direction from the upper surface of the first passivation layer 110 and the transparency through the conductive line film 130. At the same time, it conducts a current to the current injection layer 100 and reflects light generated in the light emitting structure for the light emitting diode device in the opposite direction.

The reflective current spreading layer 140 of the p-type electrode structure 400 is formed of an electrically conductive material having a reflectivity of 80% or more on the upper surface of the first passivation layer 110 in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 140 is formed of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide. It is formed of any one selected.

The material diffusion barrier layer 150 serves to prevent material diffusion movement occurring between the p-type electrode structure 400 and the wafer bonding layers 160 and 200 when manufacturing a vertical light emitting diode device. do.

The material constituting the material diffusion barrier layer 150 is determined according to the type of material constituting the p-type electrode structure 400 and the wafer bonding layers 160 and 200, but, for example, Pt, Pd, and Cu , Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, is formed of any one selected from the group consisting of metal silicide (metallic silicide).

The wafer bonding layers 160 and 200 are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

The heat sink support 190 is formed of an electroconductive material film having a thickness of at least 10 micrometers by using electro-plating, physical vapor deposition (PVD), and chemical vapor deposition (CVD). In this case, it is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti, Ta, and metal silicide.

In the group III-nitride semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure 400 is a diffusion of a material, in addition to the role of current blocking in the vertical direction and reflecting light (light) It is desirable to include a separate thin film layer that can serve as a diffusion barrier, to improve the binding and bonding between the materials, or to prevent the oxidation of the material.

On the other hand, the light emitting structure for the group III-nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN having a thickness of less than 5nm prior to forming the transparent current injection layer 100 , AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer with other dopants It may also include a superlattice composed of nitride or carbon nitride of group 2, 3, or 4 elements having a composition element.

7 to 23 are cross-sectional views illustrating a method of manufacturing a group III-nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

FIG. 7 is a cross-sectional view illustrating a growth substrate wafer on which a light emitting structure for a group III nitride semiconductor light emitting diode device is grown on a growth substrate.

Referring to FIG. 7, the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the p-type conductive layer formed of an n-type conductive single crystal semiconductor material are formed on the growth substrate 10. And an upper nitride-based cladding layer 40 made of a single crystal semiconductor material.

More specifically, the lower nitride-based cladding layer 20 may be formed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure. It may be formed of an undoped InGaN layer and a GaN layer. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Prior to growing the light emitting structure for a basic light emitting diode device composed of the group III-nitride-based semiconductor layer described above using a well-known process such as MOCVD or MBE single crystal growth method, the lower nitride-based cladding layer 20 and the Another buffer layer such as InGaN, AlN, SiC, SiCN, or GaN is placed on top of the growth surface, which is the top layer of the growth substrate 10, to improve lattice matching with the growth surface, which is the top layer of the growth substrate 10. It is preferable to further form).

On the other hand, the light emitting structure for the group III nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN, AlN having a thickness of 5 nm or less on the upper surface of the upper nitride-based cladding layer 40 , InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer, other dopants and compositions ( It may also include a superlattice structure composed of a nitride or carbon nitride of a group 2, 3, or 4 elements having a composition.

8 is a cross-sectional view of a transparent current injection layer formed on an upper layer of a growth substrate wafer.

As illustrated, a transparent current injection layer 100 is formed on an upper surface of the upper nitride based cladding layer 40 of the light emitting structure for the light emitting diode device. In this case, Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, ZnO, Ga, Ga2O3 having transmittance of 70% or more in the wavelength band of 600 nm or less It is formed of any one selected from the group consisting of, In, ITO, In2O3, Sn, SnO2. More preferably, the material forming the transparent current injection layer 100 is deposited using a physical-chemical deposition apparatus, and then oxygen, nitrogen, air, vacuum, argon Heat treatment is performed at a gas atmosphere such as (argon) and at a temperature of from room temperature to 700 ° C or lower.

FIG. 9 is a cross-sectional view of the light emitting structure for a light emitting diode device having a transparent current injection layer formed thereon by etching the shape and dimensions of a light emitting diode device having a single vertical structure.

As shown, the growth substrate 10 is completely exposed to the atmosphere in a structure having a predetermined shape and dimensions using general photo-lithography and dry etching processes. Isolation etching (290) is performed until the process is performed.

FIG. 10 is a cross-sectional view of first and second passivation layers formed on an upper layer of the light emitting structure for an isolation-etched light emitting diode device.

As shown, the passivation layer 110 completely surrounding the top and side surfaces of the light emitting structure for the light emitting diode device isotropically etched in a predetermined shape and dimension on the growth substrate 10 with an electrically insulating metal oxide or metal nitride. 280). The first passivation layer 280 formed on the side and the second passivation layer 110 formed on the transparent current injection layer 100 in order to protect the nitride-based active layer of the light emitting diode light emitting structure from the outside is It is connected continuously. The two passivation layers 110 and 280 connected in series protect the light emitting structure for the light emitting diode device from the external conductive material and moisture. At this time, the two passivation layer (110, 280) is formed of any one selected from the group consisting of SiNx, SiO2, Al2O3 using a deposition equipment such as PECVD, sputter, evaporator. More preferably, a material forming the two passivation layers 110 and 280 is deposited, and then a gas atmosphere such as oxygen, nitrogen, air, vacuum, argon, or the like is formed. Heat treatment is performed at a temperature of room temperature to 700 ° C. or less.

FIG. 11 is a cross-sectional view illustrating etching of a first passivation layer formed on an upper layer of a light emitting structure for a light emitting diode device in a via-hole shape.

As illustrated, the first passivation layer 110 formed on the upper surface of the light emitting structure for the light emitting diode device may be formed in a predetermined shape by using general photo-lithography and dry / wet etching processes. In the structure having the shape and dimensions, the etching 120 process is performed in the form of a via hole until the transparent current injection layer 100 is completely exposed to the atmosphere.

12 is a cross-sectional view of a via hole formed in a first passivation layer with a conductive line film.

As shown in the drawing, the via hole 120 formed in the first passivation layer 110 is filled with an electrically conductive conductive film body 130 using a sputter or evaporator deposition equipment. The conductive line film 130 filling the via hole 120 electrically connects the transparent current injection layer 100 and the reflective current spreading layer 140. In this case, the conductive conductive film 130 is Pt, Pd, Au, Al, Rh, Ag, Ni, Cu, Ru, V, Cr, Re, Nb, Ir, Zn, Sn, In, Si, Ge It is formed of any one selected from the group consisting of, Ga, Mn, Fe, Mo, W, Ta, Ti, Zr, Sc, Hf. More preferably, the material forming the conductive wire body 130 is deposited, and then a gas atmosphere and room temperature, such as oxygen, nitrogen, air, vacuum, argon, and the like, are deposited. The heat treatment is carried out at a temperature of not more than 700 ℃.

FIG. 13 is a cross-sectional view of a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer sequentially formed on an upper surface of a first passivation layer filled with a conductive line film.

As shown, first, the reflective current spreading layer 140 is first formed on the upper surface of the first passivation layer 110 filled with the conductive line film 130. The reflective current spreading layer 140 spreads current in the horizontal direction and conducts current to the transparent current injection layer 100 through the conductive line film 130, and is generated in the light emitting structure for the light emitting diode device. It reflects light in the opposite direction. In this case, the reflective current spreading layer 140 has Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd having a reflectivity of 80% or more in the wavelength band of 600 nm or less. It is formed of any one selected from the group consisting of Ru, metal silicide (metallic silicide). More preferably, the material forming the conductive wire body 130 is deposited, and then a gas atmosphere and room temperature, such as oxygen, nitrogen, air, vacuum, argon, and the like, are deposited. The heat treatment is carried out at a temperature of not more than 700 ℃.

The material diffusion barrier layer 150 formed on the reflective current spreading layer 140 is determined according to the type of material constituting the wafer bonding layer 160. For example, Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, is formed of any one selected from the group consisting of metal silicide (metallic silicide).

The wafer bonding layer 160 formed on the upper surface of the material diffusion barrier layer 150 is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

The p-type electrode structure 400 including the transparent current injection layer 100, the first passivation layer 110, the conductive line film body 130, and the reflective current spreading layer 140 will be described in detail with reference to FIG. 13. As shown in the drawing, the transparent current injection layer 100 may be classified into three types according to the interface property of the conductive line film 130 directly contacting the upper surface. In other words, the first 400A is a case where the entire interface between the conductive line member 130 and the transparent current injection layer 100 forms an ohmic contacting interface a, and the second 400B is an ohmic contact interface. In the case where (b) and the schottky contacting interface (b) are simultaneously provided, and the third 400C, the entire interface may form the ohmic contacting interface (b).

14 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the inventor.

Referring to FIG. 14, a sacrificial separation layer 180, a heat sink support 190, and a wafer bonding layer 200 are sequentially formed on an upper surface of the support substrate 170.

The support substrate 170 is preferably selected to suppress wafer bending during wafer-to-wafer bonding, which is a subsequent process, and to suppress crystal defects introduced into the light emitting structure for a light emitting diode device. Further, if the growth substrate 10 and the thermal expansion coefficient (thermal expansion coefficient) is the same or similar material is not limited to use. The support substrate 170 may be formed of a sapphire substrate wafer.

The sacrificial separation layer 180 is not limited to the material used as long as it causes a material decomposition reaction using a mechanical chemical polishing (CMP), a chemical wet etching solution, a photon beam of a specific wavelength band. The sacrificial separation layer 180 may be made of InGaN, ZnO, or GaN.

The heatsink support 190 is a single layer or multilayer structure composed of metal, alloy, or solid solution, and furthermore, the heatsink support 190 has a deposition rate. Preference is given to using rapid electroplating, physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. In this case, the heat sink support 190 is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti, Ta, and metallic silicide.

The wafer bonding layer 200 is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

15 is a wafer-to-wafer bonding process of a multi-functional wafer including a growth substrate wafer and a support substrate on which a light emitting structure for group III-nitride semiconductor light emitting diode devices is formed. Sectional view of the composite bonded together.

Referring to FIG. 15, a composite C having a wafer bonding interface is formed by a wafer bonding process between the wafer bonding layer 160 of the growth substrate wafer and the wafer bonding layer 200 of the functional bonded wafer.

The wafer bond is preferably formed by applying a predetermined hydrostatic pressure under a temperature of room temperature to 700 ° C. and under a vacuum, oxygen, argon, or nitrogen gas atmosphere. Do.

Furthermore, surface treatment and heat treatment processes may be introduced to improve mechanical bonding and formation of ohmic contact interfaces between the two materials 160, 200 before and after the wafer bonding.

FIG. 16 is a cross-sectional view illustrating a process for lifting off a growth substrate in a wafer bonded composite. FIG.

As shown, the process of lifting off the growth substrate 10 which is a part of the growth substrate wafer in the wafer-bonded composite C causes the optically transparent laser beam 210 to be a photon beam having strong energy. The growth substrate 10 is irradiated on the rear surface of the growth substrate 10 to generate a thermal-chemical decomposition reaction at an interface between the growth substrate 10 and the lower nitride-based cladding layer of the light emitting structure for the light emitting diode device to separate the growth substrate 10. In addition, chemical wet etching using a chemical-mechanical polishing or etching solution may be used according to the physical and chemical properties of the growth substrate 10.

FIG. 17 is a cross-sectional view of a lower nitride-based cladding layer of a light emitting structure for a light emitting diode device exposed to the atmosphere after the growth substrate is separated from the wafer-bonded composite.

As shown, after separating the growth substrate 10, the remaining foreign matter remaining on the upper surface of the lower nitride-based cladding layer 20 of the light emitting structure for a light emitting diode device is completely removed and the lower nitride-based cladding layer 20 Expose the nitrogen-polar surface of the substrate to the atmosphere.

FIG. 18 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based cladding layer after the growth substrate of the growth substrate wafer is separated.

Referring to FIG. 18, as a process step of stably removing the growth substrate 10, the lower nitride-based clad layer 20 is etched to be exposed to the air by using chemical wet etching or dry etching. Corrugation 220 is performed on the surface of the lower nitride-based cladding layer 20 having a nitrogen-polar surface exposed to the atmosphere by using wet or dry etching.

19 is a cross-sectional view of a composite in which a partial n-type ohmic contact electrode structure is formed in a portion of the upper surface of the nitride clad layer on which surface irregularities are formed.

Referring to FIG. 19, a partial n-type ohmic contact electrode structure 230 is formed in a portion of the upper surface of the lower nitride based cladding layer 20 having a nitrogen polarity surface having surface irregularities 220 formed thereon. The partial n-type ohmic contact electrode structure 230 is preferably formed of a reflective material having a reflectivity of 50% or more in a wavelength band of 600 nm or less. In this case, the partial n-type ohmic contact electrode structure 230 may be formed of Cr / Al / Cr / Au.

In addition, before and after forming the partial n-type ohmic contact electrode structure 230 on the upper surface of the lower nitride-based cladding layer 20 having the nitrogen-polar surface, the vertical structure of the light emitting diode device may be improved. In order to do this, a separate surface treatment or heat treatment may be performed.

20 is a cross-sectional view illustrating a process of vertically cutting a single chip.

As shown, a vertical sawing, laser scribing, or etching process 240 is performed between the single chips in order to fabricate a single chip light emitting diode device. To do it.

21 is a cross-sectional view taken after cutting in the vertical direction to produce a single chip.

As shown, the wafer bonding layer 200, heatsink support 190, which is part of the functional bonded wafer through the mechanical sawing, laser scribing, or etching process 240 described above. ), And the sacrificial layer 180 is removed to expose the support substrate 170 to the atmosphere.

22 is a cross-sectional view showing a process for lifting off a support substrate in a wafer bonded composite.

As shown, the process of lifting off the support substrate 170 that is part of the functionally bonded wafer in the wafer-bonded composite C causes the optically transparent laser beam 250 to be a photon beam having strong energy. By irradiating the back of the support substrate 170, the support substrate 170 is separated by generating a thermo-chemical decomposition reaction in the sacrificial layer 180. In addition, according to the physical and chemical properties of the support substrate 170, a chemical wet etching using a chemical-mechanical polishing or etching solution may be used.

FIG. 23 is a cross-sectional view illustrating a vertical light emitting diode device finally completed after removing a sacrificial layer from a wafer-bonded composite.

Referring to FIG. 23, the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40 having the surface irregularities 220 on the lower surface of the partial n-type ohmic contact electrode structure 230 are illustrated. , A p-type electrode structure 400 composed of a transparent current injection layer 100, a first passivation layer 110, a conductive line film body 130, and a reflective current spreading layer 140, and a material diffusion barrier layer 150. The light emitting diode, which is a vertical light emitting device including two wafer bonding layers 160 and 200 and a heat sink support 190, is formed. Further, the lower nitride based cladding layer 20, the nitride based active layer 30, the upper nitride based cladding layer 40, and the transparent current are provided to protect the vertical light emitting diode device from external conductive impurities and moisture. A second passivation layer 280 is formed that completely surrounds the injection layer 100 and is continuously connected to the first passivation layer 110.

24 to 40 are cross-sectional views illustrating a method for manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

FIG. 24 is a cross-sectional view illustrating a growth substrate wafer in which a light emitting structure for a group III nitride semiconductor light emitting diode device is grown on a growth substrate.

Referring to FIG. 24, a lower nitride-based cladding layer 20, a nitride-based active layer 30, and a p-type conductive layer formed of an n-type conductive single crystal semiconductor material on the growth substrate 10 are basically formed. And an upper nitride based cladding layer 40 made of a single crystal semiconductor material.

In more detail, the lower nitride-based cladding layer 20 may be formed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure. It may be formed of an undoped InGaN layer and a GaN layer. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Prior to growing the light emitting structure for a basic light emitting diode device composed of the group III-nitride-based semiconductor layer described above using a well-known process such as MOCVD or MBE single crystal growth method, the lower nitride-based cladding layer 20 and the Another buffer layer such as InGaN, AlN, SiC, SiCN, or GaN is placed on top of the growth surface, which is the top layer of the growth substrate 10, to improve lattice matching with the growth surface, which is the top layer of the growth substrate 10. It is preferable to further form).

On the other hand, the light emitting structure for the Group III nitride semiconductor light emitting diode device is n-type conductive InGaN, GaN, AlInN, AlN, having a thickness of 5 nm or less on the upper surface of the upper nitride-based cladding layer 40 InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN single layer, p type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN single layer, other dopants and compositions It may also include a superlattice consisting of a nitride or carbon nitride of the group 2, 3, or 4 elements having the element ()).

25 is a cross-sectional view of a transparent current injection layer formed on an upper layer of a growth substrate wafer.

As illustrated, a transparent current injection layer 100 is formed on an upper surface of the upper nitride based cladding layer 40 of the light emitting structure for the light emitting diode device. In this case, Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, ZnO, Ga, Ga2O3 having transmittance of 70% or more in the wavelength band of 600 nm or less It is formed of any one selected from the group consisting of, In, ITO, In2O3, Sn, SnO2. More preferably, the material forming the transparent current injection layer 100 is deposited using a physical-chemical deposition apparatus, and then oxygen, nitrogen, air, vacuum, argon Heat treatment is performed at a gas atmosphere such as (argon) and at a temperature of from room temperature to 700 ° C or lower.

FIG. 26 is a cross-sectional view illustrating isolation etching of a light emitting structure for a light emitting diode device having a transparent current injection layer formed in the shape and dimensions of a light emitting diode device having a single vertical structure. FIG.

As shown, the growth substrate 10 is completely exposed to the atmosphere in a structure having a predetermined shape and dimensions using general photo-lithography and dry etching processes. Isolation etching (290) is performed until the process is performed.

FIG. 27 is a cross-sectional view of first and second passivation layers formed on an upper layer of a light emitting structure for an isolation-etched light emitting diode device.

As shown, the passivation layer completely covering the upper and side surfaces of the light emitting structure for the light emitting diode device isotropically etched in a predetermined shape and dimension on the growth substrate 10 with an electrically insulating metal oxide or metal nitride ( 110, 280. The first passivation layer 280 formed on the side and the second passivation layer 110 formed on the transparent current injection layer 100 in order to protect the nitride-based active layer of the light emitting diode light emitting structure from the outside is It is connected continuously. The two passivation layers 110 and 280 connected in series protect the light emitting structure for the light emitting diode device from the external conductive material and moisture. At this time, the two passivation layer (110, 280) is formed of any one selected from the group consisting of SiNx, SiO2, Al2O3 using a deposition equipment such as PECVD, sputter, evaporator. More preferably, a material forming the two passivation layers 110 and 280 is deposited, and then a gas atmosphere such as oxygen, nitrogen, air, vacuum, argon, or the like is formed. Heat treatment is performed at a temperature of room temperature to 700 ° C. or less.

FIG. 28 is a cross-sectional view illustrating etching of a first passivation layer formed on an upper layer of a light emitting structure for a light emitting diode device in a via-hole;

As illustrated, the first passivation layer 110 formed on the upper surface of the light emitting structure for the light emitting diode device may be formed in a predetermined shape by using general photo-lithography and dry / wet etching processes. In the structure having the shape and dimensions, the etching 120 process is performed in the form of a via hole until the transparent current injection layer 100 is completely exposed to the atmosphere.

29 is a cross-sectional view of a via hole formed in a first passivation layer with a conductive line film.

As shown in the drawing, the via hole 120 formed in the first passivation layer 110 is filled with an electrically conductive conductive film body 130 using a sputter or evaporator deposition equipment. The conductive line film 130 filling the via hole 120 electrically connects the transparent current injection layer 100 and the reflective current spreading layer 140. In this case, the conductive conductive film 130 is Pt, Pd, Au, Al, Rh, Ag, Ni, Cu, Ru, V, Cr, Re, Nb, Ir, Zn, Sn, In, Si, Ge It is formed of any one selected from the group consisting of, Ga, Mn, Fe, Mo, W, Ta, Ti, Zr, Sc, Hf. More preferably, the material forming the conductive wire body 130 is deposited, and then a gas atmosphere and room temperature, such as oxygen, nitrogen, air, vacuum, argon, and the like, are deposited. The heat treatment is carried out at a temperature of not more than 700 ℃.

30 is a cross-sectional view of sequentially forming a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer on an upper surface of a first passivation layer filled with a conductive line film.

As shown, first, the reflective current spreading layer 140 is first formed on the upper surface of the first passivation layer 110 filled with the conductive line film 130. The reflective current spreading layer 140 spreads current in the horizontal direction and conducts current to the transparent current injection layer 100 through the conductive line film 130, and is generated in the light emitting structure for the light emitting diode device. It reflects light in the opposite direction. In this case, the reflective current spreading layer 140 has Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd having a reflectivity of 80% or more in the wavelength band of 600 nm or less. It is formed of any one selected from the group consisting of Ru, metal silicide (metallic silicide). More preferably, the material forming the conductive wire body 130 is deposited, and then a gas atmosphere and room temperature, such as oxygen, nitrogen, air, vacuum, argon, and the like, are deposited. The heat treatment is carried out at a temperature of not more than 700 ℃.

The material diffusion barrier layer 150 formed on the reflective current spreading layer 140 is determined according to the type of material constituting the wafer bonding layer 160. For example, Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, is formed of any one selected from the group consisting of metal silicide (metallic silicide).

The wafer bonding layer 160 formed on the upper surface of the material diffusion barrier layer 150 is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

The p-type electrode structure 400 including the transparent current injection layer 100, the first passivation layer 110, the conductive line film 130, and the reflective current spreading layer 140 will be described in detail with reference to FIG. 30. As shown in the drawing, the transparent current injection layer 100 may be classified into three types according to the interface property of the conductive line film 130 directly contacting the upper surface. In other words, the first 400A is a case where the entire interface between the conductive line member 130 and the transparent current injection layer 100 forms an ohmic contacting interface a, and the second 400B is an ohmic contact interface. In the case where (b) and the schottky contacting interface (b) are simultaneously provided, and the third 400C, the entire interface may form the ohmic contacting interface (b).

FIG. 31 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the inventor.

Referring to FIG. 31, a sacrificial separation layer 180, a heat sink support 190, and a wafer bonding layer 200 are sequentially formed on an upper surface of the support substrate 170.

The support substrate 170 is preferably selected to suppress wafer bending during wafer-to-wafer bonding, which is a subsequent process, and to suppress crystal defects introduced into the light emitting structure for a light emitting diode device. Further, if the growth substrate 10 and the thermal expansion coefficient (thermal expansion coefficient) is the same or similar material is not limited to use. The support substrate 170 may be formed of a sapphire substrate wafer.

The sacrificial separation layer 180 is not limited to the material used as long as the material decomposition reaction using mechanical chemical polishing (CMP), chemical wet etching solution, photon beam of a specific wavelength band occurs. The sacrificial separation layer 180 may be made of InGaN, ZnO, or GaN.

The heatsink support 190 is a single layer or multilayer structure composed of metal, alloy, or solid solution, and furthermore, the heatsink support 190 has a deposition rate. Preference is given to using rapid electroplating, physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. In this case, the heat sink support 190 is formed of any one selected from the group consisting of Ni, Cu, Nb, CuW, NiCu, NiCr, Au, Ti, Ta, and metal silicide.

The wafer bonding layer 200 is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metal silicide.

FIG. 32 shows a wafer to wafer bonding process of a multi-functional wafer including a growth substrate wafer and a support substrate on which a light emitting structure for a group III nitride semiconductor light emitting diode device is formed. Sectional view of the composite bonded together.

Referring to FIG. 32, a composite C having a wafer bonding interface is formed by a wafer bonding process between the wafer bonding layer 160 of the growth substrate wafer and the wafer bonding layer 200 of the functional bonded wafer.

The wafer bond is preferably formed by applying a predetermined hydrostatic pressure under a temperature of room temperature to 700 ° C. and under a vacuum, oxygen, argon, or nitrogen gas atmosphere. Do.

Furthermore, surface treatment and heat treatment processes may be introduced to improve mechanical bonding and formation of ohmic contact interfaces between the two materials 160, 200 before and after the wafer bonding.

33 is a cross-sectional view showing a process for lifting off a growth substrate in a wafer bonded composite.

As shown, the process of lifting off the growth substrate 10 which is a part of the growth substrate wafer in the wafer-bonded composite C causes the optically transparent laser beam 210 to be a photon beam having strong energy. The growth substrate 10 is irradiated on the rear surface of the growth substrate 10 to generate a thermal-chemical decomposition reaction at an interface between the growth substrate 10 and the lower nitride-based cladding layer of the light emitting structure for the light emitting diode device to separate the growth substrate 10. In addition, chemical wet etching using a chemical-mechanical polishing or etching solution may be used according to the physical and chemical properties of the growth substrate 10.

FIG. 34 is a cross-sectional view of a nitride-clad lower layer of the light emitting structure for a light emitting diode device exposed to the atmosphere after the growth substrate is separated from the wafer-bonded composite.

As shown, after separating the growth substrate 10, the remaining foreign matter remaining on the upper surface of the lower nitride-based cladding layer 20 of the light emitting structure for a light emitting diode device is completely removed and the lower nitride-based cladding layer 20 Expose the nitrogen-polar surface of the substrate to the atmosphere.

35 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based cladding layer after the growth substrate of the growth substrate wafer is separated.

Referring to FIG. 35, as a process step of stably removing the growth substrate 10, the lower nitride-based clad layer 20 is etched to be exposed to air by using chemical wet etching or dry etching. Corrugation 220 is performed on the surface of the lower nitride-based cladding layer 20 having a nitrogen-polar surface exposed to the atmosphere by using wet or dry etching.

36 is a cross-sectional view of the composite in which the front surface n-type ohmic contact electrode structure is formed on a portion of the upper surface of the nitride clad layer on which surface irregularities are formed.

Referring to FIG. 36, front n-type ohmic contact electrode structures 260 and 270 are formed on the upper surface of the lower nitride-based cladding layer 20 on which the surface irregularities 220 are formed. The front n-type ohmic contact electrode structures 260 and 270 form an ohmic contacting interface with an entire region of the upper surface of the lower nitride-based cladding layer 20 and have a transmittance of 70% or more in a wavelength band of 600 nm or less. The transparent ohmic contact electrode 260 and the reflective ohmic contact electrode are formed on the upper surface, and the reflective electrode pad 270 having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 260 may be made of ITO, InZnO, or ZnInO, and the reflective electrode pad 270 may be made of Ag / Ti / Pt / Au.

In addition, before and after forming the front n-type ohmic contact electrode structures 260 and 270 on the upper surface of the lower nitride-based cladding layer 20 having the nitrogen-polar surface, the light emitting diode device performance of the vertical structure is improved. In order to improve, a separate surface treatment or heat treatment may be performed.

37 is a cross-sectional view illustrating a process of cutting in a vertical direction to manufacture a single chip.

As shown, a vertical sawing, laser scribing, or etching process 240 is performed between the single chips in order to fabricate a single chip light emitting diode device. To do it.

FIG. 38 is a cross-sectional view taken after being cut vertically to produce a single chip. FIG.

As shown, the wafer bonding layer 200, heatsink support 190, which is part of the functional bonded wafer through the mechanical sawing, laser scribing, or etching process 240 described above. ), And the sacrificial layer 180 is removed to expose the support substrate 170 to the atmosphere.

39 is a cross-sectional view showing a process for lifting off a support substrate in a wafer bonded composite.

As shown, the process of lifting off the support substrate 170 that is part of the functionally bonded wafer in the wafer-bonded composite C causes the optically transparent laser beam 250 to be a photon beam having strong energy. By irradiating the back of the support substrate 170, the support substrate 170 is separated by generating a thermo-chemical decomposition reaction in the sacrificial layer 180. In addition, according to the physical and chemical properties of the support substrate 170, a chemical wet etching using a chemical-mechanical polishing or etching solution may be used.

40 is a cross-sectional view illustrating a vertical light emitting diode device finally completed after removing a sacrificial layer from a wafer-bonded composite.

Referring to FIG. 40, the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer having surface irregularities 220 on the bottom surface of the front n-type ohmic contact electrode structures 260 and 270 ( 40, a p-type electrode structure 400 composed of a transparent current injection layer 100, a first passivation layer 110, a conductive front end body 130, and a reflective current spreading layer 140, and a material diffusion barrier layer ( 150, a light emitting diode, which is a vertical light emitting device including two wafer bonding layers 160 and 200, and a heat sink support 190, is formed. Further, the lower nitride based cladding layer 20, the nitride based active layer 30, the upper nitride based cladding layer 40, and the transparent current are provided to protect the vertical light emitting diode device from external conductive impurities and moisture. A second passivation layer 280 is formed that completely surrounds the injection layer 100 and is continuously connected to the first passivation layer 110.

The present invention is not limited to the above-described embodiments, but can be variously modified and changed by those skilled in the art, which should be regarded as included in the spirit and scope of the present invention as defined in the appended claims. something to do.

1 is a cross-sectional view showing a representative example of a conventional Group 3 nitride-based semiconductor light emitting diode device,

2 is a cross-sectional view for comparing and comparing a multi-quantum well structure and a superlattice structure,

3 is a cross-sectional view showing a representative example of a conventional Group 3 nitride-based semiconductor LED device,

4 is a cross-sectional view showing a representative example of a group III-nitride semiconductor light emitting diode device having a conventional flip chip structure;

5 is a cross-sectional view showing a first embodiment of a group III nitride semiconductor light emitting diode device having a vertical structure manufactured according to the present invention;

6 is a cross-sectional view showing a second embodiment of a group III-nitride semiconductor light emitting diode device having a vertical structure manufactured according to the present invention.

7 to 23 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

24 to 40 are cross-sectional views illustrating a method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure as an embodiment according to the present invention.

41 is a cross-sectional view of the manufacturing process of the group III nitride semiconductor light emitting diode of the vertical structure according to the prior art.

Claims (42)

A partial n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device formed of a lower nitride based cladding layer, a nitride based active layer, and an upper nitride based cladding layer below the partial n-type ohmic contact electrode structure; A p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer formed under the light emitting structure; A group III nitride semiconductor light emitting diode device having a vertical structure including a heat sink support formed under the p-type electrode structure. The method of claim 1, Nitride or carbon nitride of Group 2, 3, or 4 elements having different dopants and composition elements on the upper nitride-based cladding layer of the light emitting structure for the light emitting diode device A vertical group III-nitride semiconductor light emitting diode device having a superlattice structure of a transparent multi-layer film composed of nitride. The method of claim 1, An n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer having a thickness of 5 nm or less on the upper nitride cladding layer upper surface of the light emitting diode device; A vertical group III-nitride semiconductor light emitting diode device having a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and AlInGaN monolayer having a thickness of 5 nm or less. The method of claim 1, And a group III-nitride semiconductor light emitting diode having a vertical structure including a light emitting structure for the light emitting diode device and a second passivation layer continuously connected to the first passivation layer. The method of claim 1, The first group passivation layer is a vertical group III-nitride semiconductor light emitting diode device in which 50% or less of the entire area is patterned into via-holes, and then filled with a conductive wire film, which is an electrically conductive material. The method of claim 1, And a group III-nitride semiconductor light emitting diode having a vertical structure including a conductive line film electrically connecting the transparent current injection layer and the reflective current spreading layer. The method of claim 1, The partial n-type ohmic contact electrode structure has a predetermined shape and dimensions in a portion of the upper surface of the lower nitride-based clad layer, and includes a reflective ohmic contact electrode and an electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less. Group III-nitride semiconductor light emitting device having a structure. The method of claim 1, The heat-sink support is an electroconductive material film having a thickness of at least 10 microns or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. A group group III nitride semiconductor light emitting diode device having a vertical structure. The method of claim 1, The p-type electrode structure includes a separate thin film layer capable of preventing current concentration in the vertical direction and reflecting light, and preventing diffusion of materials, improving bonding and bonding between materials, or preventing oxidation of materials. A group III nitride semiconductor light emitting diode device having a vertical structure. A front n-type ohmic contact electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride based cladding layer, a nitride based active layer, and an upper nitride based cladding layer below the front n-type ohmic contact electrode structure; A p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer formed under the light emitting structure; A group III nitride semiconductor light emitting diode device having a vertical structure including a heat sink support formed under the p-type electrode structure. The method of claim 10, Nitride or carbon nitride of group 2, 3, or 4 elements having different dopants and composition elements on the upper nitride-based cladding layer of the light emitting structure for the light emitting diode device A vertical group III-nitride semiconductor light emitting diode device having a superlattice structure of a transparent multi-layer film composed of nitride. The method of claim 10, N-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN, SiC, SiCN, MgN, ZnN monolayer having a thickness of 5 nm or less on the upper nitride cladding layer upper surface of the light emitting diode device; A vertical group III-nitride semiconductor light emitting diode device having a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and AlInGaN monolayer having a thickness of 5 nm or less. The method of claim 10, And a group III-nitride semiconductor light emitting diode having a vertical structure including a light emitting structure for the light emitting diode device and a second passivation layer continuously connected to the first passivation layer. The method of claim 10, The first group passivation layer is a vertical group III-nitride semiconductor light emitting diode device in which 50% or less of the entire area is patterned into via-holes, and then filled with a conductive wire film, which is an electrically conductive material. The method of claim 10, And a group III-nitride semiconductor light emitting diode having a vertical structure including a conductive line film electrically connecting the transparent current injection layer and the reflective current spreading layer. The method of claim 10, The front n-type ohmic contact electrode structure includes a transparent ohmic contact electrode forming an ohmic contact interface with an entire area of the upper surface of the lower nitride-based cladding layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less, and an upper surface of the transparent ohmic contact electrode. A group III-nitride semiconductor light-emitting diode device having a vertical structure formed of a reflective electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less. The method of claim 10, The heat-sink support is an electroconductive material film having a thickness of at least 10 microns or more using electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. A group group III nitride semiconductor light emitting diode device having a vertical structure. The method of claim 10, The p-type electrode structure includes a separate thin film layer capable of preventing current concentration in the vertical direction and reflecting light, and preventing diffusion of materials, improving bonding and bonding between materials, or preventing oxidation of materials. A group III nitride semiconductor light emitting diode device having a vertical structure. Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device comprising a lower nitride-based cladding layer including a buffer layer, a nitride-based active layer, and an upper nitride-based cladding layer is sequentially grown on the growth substrate; Forming a p-type electrode structure including a transparent current injection layer, a first passivation layer, a conductive line film, and a reflective current spreading layer on an upper surface of the upper nitride based cladding layer, which is the uppermost part of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of the support substrate; Forming a composite by wafer bonding the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner; Separating the growth substrate of the growth substrate wafer from the composite; Forming surface irregularities and a partial n-type ohmic contact electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; Separating the support substrate of the functional bonding wafer from the composite from which the growth substrate is removed. A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure. The method of claim 19, A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure in which a transparent current injection layer is formed of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on an upper surface of the light emitting diode device. The method of claim 19, And a first passivation layer formed of a material having electrical transmittance on the upper surface of the transparent current injection layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less. The method of claim 19, A group III-nitride semiconductor having a vertical structure for patterning a region of 50% or less of the entire region of the first passivation layer in a via-hole shape, and then forming a conductive wire film filled with the via hole with an electrically conductive material. Method of manufacturing a light emitting diode device. The method of claim 19, A group III-nitride semiconductor light emitting device having a vertical structure for forming a reflective current spreading layer of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on an upper surface of the first passivation layer having the filled conductive line film. Method of preparation. The method of claim 19, When the sacrificial separation layer of the functional bonded wafer is separated by irradiating a photon beam of a specific wavelength band having a strong energy, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of: The method of claim 19, A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed by any one selected from the group consisting of Au, Ag, Pd, SiO 2, and SiN x when etching by separating in a wet etching solution. The method of claim 19, The heatsink support of the functional bonded wafer is formed of an electroconductive material film having a thickness of at least 10 microns or more by using electroplating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. A method of manufacturing a group III-nitride semiconductor light emitting diode device having a structure. The method of claim 19, And a wafer bonding layer formed on the growth substrate and the support substrate, wherein the wafer bonding layer is formed of an electroconductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. The method of claim 27, The wafer bonding layer is a manufacturing method of a vertical group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr. The method of claim 19, The process of separating the growth substrate and the support substrate may be performed by chemical-mechanical polishing (CMP), chemical etching using wet etching solution, or vertical structure using thermal-chemical decomposition by irradiating strong energy photon beam. Method of manufacturing a group nitride semiconductor light emitting diode device. The method of claim 19, In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. A method for producing a group III nitride semiconductor light emitting diode device having a vertical structure. Preparing a growth substrate wafer in which a light emitting structure for a group III nitride-based light emitting diode device comprising a lower nitride-based cladding layer including a buffer layer, a nitride-based active layer, and an upper nitride-based cladding layer is sequentially grown on the growth substrate; Forming a p-type electrode structure including a transparent current injection layer, a passivation layer, and a reflective current spreading layer on an upper surface of the upper nitride based cladding layer, which is a top layer of the light emitting structure for the light emitting diode device; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on an upper surface of the support substrate; Forming a composite by wafer bonding the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner; Separating the growth substrate of the growth substrate wafer from the composite; Forming surface irregularities and a front n-type ohmic contact electrode structure on an upper surface of the lower nitride-based cladding layer of the composite from which the growth substrate is removed; Separating the support substrate of the functional bonding wafer from the composite from which the growth substrate is removed. A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure. The method of claim 31, wherein A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure in which a transparent current injection layer is formed of an electrically conductive material having a transmittance of 70% or more in a wavelength band of 600 nm or less on an upper surface of the light emitting diode device. The method of claim 31, wherein And a first passivation layer formed of a material having electrical transmittance on the upper surface of the transparent current injection layer and having a transmittance of 70% or more in a wavelength band of 600 nm or less. The method of claim 31, wherein A group III-nitride semiconductor having a vertical structure in which 50% or less of the entire area of the first passivation layer is patterned into a via-hole, and then forming a conductive wire film filled with the via hole with an electrically conductive material. Method of manufacturing a light emitting diode device. The method of claim 31, wherein A group III-nitride semiconductor light emitting device having a vertical structure for forming a reflective current spreading layer of an electrically conductive material having a reflectivity of 80% or more in a wavelength band of 600 nm or less on an upper surface of the first passivation layer having the filled conductive line film. Method of preparation. The method of claim 31, wherein When the sacrificial separation layer of the functional bonded wafer is separated by irradiating a photon beam of a specific wavelength band having a strong energy, ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of: The method of claim 31, wherein A method of manufacturing a group III nitride semiconductor light emitting diode device having a vertical structure formed by any one selected from the group consisting of Au, Ag, Pd, SiO 2, and SiN x when etching by separating in a wet etching solution. The method of claim 31, wherein The heatsink support of the functional bonded wafer is formed of an electroconductive material film having a thickness of at least 10 microns or more by using electroplating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) methods. A method of manufacturing a group III-nitride semiconductor light emitting diode device having a structure. The method of claim 31, wherein And a wafer bonding layer formed on the growth substrate and the support substrate, wherein the wafer bonding layer is formed of an electroconductive material film having a strong bonding force at a predetermined pressure and a temperature of 300 ° C. or higher. The method of claim 39, The wafer bonding layer is a manufacturing method of a vertical group III nitride semiconductor light emitting diode device having a vertical structure formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr. The method of claim 31, wherein The process of separating the growth substrate and the support substrate may be performed by chemical-mechanical polishing (CMP), chemical etching using wet etching solution, or vertical structure using thermal-chemical decomposition by irradiating strong energy photon beam. Method of manufacturing a group nitride semiconductor light emitting diode device. The method of claim 31, wherein In addition to the electrical and optical properties of the group III-nitride semiconductor light emitting diode devices, processes such as annealing and surface treatment are introduced before and after each step as a means for enhancing the mechanical bonding between the layers. A method for producing a group III nitride semiconductor light emitting diode device having a vertical structure.

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