JP2008300621A - Semiconductor light-emitting element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element avoiding problems, such as the leakage, absorption, heat generation or the like of a light resulting from a sapphire board, while being capable of amply extracting the light generated from a light-emitting layer effectively, and to provide a manufacturing method for the semiconductor light-emitting element. <P>SOLUTION: The semiconductor light-emitting element is constituted of a support board, a semiconductor layer arranged on the support board via at least a first insulating film, a reflecting section formed in the side-face direction of the semiconductor layer and a sealing member coating the semiconductor layer on the support board. In the semiconductor light-emitting element, the top face of the first insulating film is arranged at a location nearer to the support board than to the base of the semiconductor layer on the outer periphery of the semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device capable of improving light extraction efficiency and a manufacturing method thereof.

  Although a nitride semiconductor is a promising semiconductor material that is a direct transition semiconductor, it is difficult to manufacture a bulk single crystal. Therefore, at present, a hetero epitaxy technique for growing GaN on a heterogeneous substrate such as sapphire or SiC by using metal organic chemical vapor deposition (MOCVD) is widely used. Among them, sapphire is widely used to grow a light-emitting element made of a highly efficient nitride semiconductor, and a nitride semiconductor layer is usually grown via a buffer layer at a low temperature of about 600 ° C.

  However, since sapphire is an insulator, it is necessary to provide two electrical contact portions on the upper surface (same surface) of the semiconductor layer stacked thereon, and the effective light emitting area in the same substrate area compared to the conductor substrate In addition to narrowing and having both electrodes on the same surface, there is a problem that the current density is locally increased and the element is deteriorated due to heat generation.

Therefore, a technique for removing the sapphire substrate by bonding the semiconductor layer to the support substrate has been proposed.
In addition, as a method for efficiently extracting the lateral light from the light emitting layer laminated on the sapphire substrate, a reflective surface is provided, or a groove from the semiconductor layer to the sapphire substrate is provided, and the outer wall of the groove is formed on the reflective surface. (Patent Document 1).
JP 2001-332760 A

  However, since the sapphire substrate is translucent, it has not yet absorbed light from the light emitting layer or caused leakage, and has not been able to extract light emitted laterally sufficiently effectively. is there.

  The present invention has been made in view of the above problems, and avoids problems such as light leakage, absorption, and heat generation caused by the sapphire substrate, and can emit light generated from the light emitting layer sufficiently effectively. An object is to provide an element and a method for manufacturing the element.

The semiconductor light emitting device of the present invention includes a support substrate, a semiconductor layer disposed on the support substrate through at least a first insulating film, a reflective portion provided in a side surface direction of the semiconductor layer, and the support substrate A semiconductor light emitting device comprising a sealing member covering the semiconductor layer,
The first insulating film is characterized in that the upper surface of the first insulating film is disposed closer to the support substrate than the bottom surface of the semiconductor layer on the outer periphery of the semiconductor layer.

In this semiconductor light emitting device, it is preferable that the first insulating film has a shape of a groove surrounding the outer periphery of the semiconductor layer.
In addition, the sealing member covers the side surface of the semiconductor layer and the outer surface of the semiconductor layer, the first insulating film upper surface, and the reflective portion disposed outside the first insulating film upper surface, The height from the support substrate is preferably higher or the same as that of the semiconductor layer.
Further, it is preferable that the sealing member is light-transmitting, covers the upper surface of the semiconductor layer, and the first insulating film is light-transmitting and has a refractive index smaller than that of the sealing member.
Furthermore, a first electrode is provided on the surface of the semiconductor layer on the side of the support substrate, and a second electrode is provided on the surface of the semiconductor layer opposite to the surface, and the first electrode is electrically connected to the support substrate. The insulating film preferably extends from the first electrode to the outer periphery of the element on the support substrate side surface of the semiconductor layer.
Moreover, it is preferable that the sealing member contains a phosphor.
Furthermore, it is preferable that the first insulating film is silicon oxide and the sealing member is made of a material having a higher refractive index than silicon oxide.
It is preferable that the reflection portion includes a metal at least in part.
The sealing member includes a first sealing member and a second sealing member that covers the outside of the first sealing member, or the first sealing member and the second sealing member are It is preferable that the second sealing member is made of a material having a different refractive index or contains a phosphor.

In the method for manufacturing a semiconductor light emitting device according to the present invention, at least a first insulating film and a semiconductor layer are stacked in this order on a support substrate, a reflective portion is provided in a side surface direction of the semiconductor layer, and the semiconductor layer is A method for manufacturing a semiconductor light emitting device covered with a sealing member,
Growing a semiconductor layer on the growth substrate,
The upper surface of the semiconductor layer is bonded to the support substrate through at least the first insulating film,
A plurality of semiconductor layers are separately formed on a supporting substrate by removing a part of the growth substrate and the semiconductor layer,
Forming a frame surrounding each semiconductor layer on the support substrate;
Removing at least a part of the first insulating film on the outer periphery of the semiconductor layer in the film thickness direction and bringing the exposed surface closer to the support substrate than the bottom surface of the semiconductor layer;
A step of covering the semiconductor layer and the exposed surface of the first insulating film in the frame on the support substrate with a sealing member;

In this method of manufacturing a semiconductor light emitting device, the first electrode is provided on the bottom surface of the semiconductor layer, and bonding is performed by forming a conductive layer by eutectic bonding, and the first electrode and the support substrate are electrically connected. It is preferable to do this and / or by thermocompression bonding.
Furthermore, it is preferable to further include a step of cutting the frame body and the support substrate to obtain a semiconductor light emitting element.

  According to the semiconductor light emitting device of the present invention, it is possible to avoid light leakage, absorption, heat generation and the like caused by the sapphire substrate, and to sufficiently extract light generated from the light emitting layer, and a method for manufacturing the same. Can be provided.

  As shown in FIG. 1, the semiconductor light emitting device of the present invention is mainly formed including a support substrate 10, a first insulating film 17, a semiconductor layer 12, a reflection portion 18, and a sealing member 19.

  The semiconductor layer is usually configured to include a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer. Either the first conductivity type or the second conductivity type semiconductor layer may be used as the light extraction surface of the light-emitting element. However, the n-type semiconductor layer generally has a low resistance, and the electrode size can be reduced. Therefore, it is preferable to use an n-type semiconductor layer as a light extraction surface. Therefore, if the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are stacked in this order from the side closer to the support substrate, the n-type semiconductor layer is the second conductive semiconductor layer. Is preferred.

The semiconductor layer is not particularly limited. For example, a gallium nitride compound semiconductor is preferably used. In particular, by using a compound semiconductor with a Group 3 element such as In, Ga, Al, etc., a light emitting device in the near ultraviolet and visible light regions, specifically in the short wavelength region (wavelength 300 nm to 550 nm) including the ultraviolet region In particular, an element suitable for combination with a phosphor can be provided. Specific _{compositions, In X Al Y Ga 1-} XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) include a nitride semiconductor such as. The semiconductor layer may have a single layer structure, but may have a laminated structure such as a homo structure, a hetero structure, or a double hetero structure having a MIS junction, a PIN junction, or a PN junction, and has a superlattice structure or a quantum effect. It may be a single quantum well structure or a multiple quantum well structure in which the resulting thin films are stacked. Alternatively, a distributed feedback laser using a semiconductor multilayer film may be used. In this case, it can be suitably used for visible light or blue light.

In particular, as the light emitting layer, a well layer made of Al _a In _b Ga _1-ab N (0 ≦ a ≦ 1, 0 ≦ b ≦ 1, a + b ≦ 1), and Al _c In _d Ga _{1-c— d N (0 ≦ c ≦ 1,0} ≦ d ≦ 1, c + d ≦ 1) and consisting of a barrier layer, preferably _in b _Ga 1-b N well layer (0 <b <1) and _Al c _{Ga 1-} A quantum well structure including at least a barrier layer of _c N (0 ≦ c <1) or In _d Ga _1-d N (0 ≦ d <1) is preferable. The quantum well structure may be a single quantum well structure or a multiple quantum well structure. The semiconductor layer used for the light emitting layer may be any of non-doped, n-type impurity doped, and p-type impurity doped, but is preferably non-doped or n-type impurity doped, and the well layer is undoped and the barrier layer is n-type impurity doped. Doping is preferable. Thereby, the output and luminous efficiency of a light emitting element can be improved. As for the film thickness of a well layer and a barrier layer, 1 nm-about 30 nm are mentioned, for example, respectively.

The first conductivity type semiconductor layer is preferably formed of a plurality of layers. For example, a laminate in which a p-type cladding layer and a p-type contact layer are stacked from the side closer to the light emitting layer.
The p-type cladding layer has a composition larger than the band gap energy of the light emitting layer and is not particularly limited as long as it can confine carriers in the light emitting layer. For example, Al _k Ga _1-k N (0 ≦ k <1) is used. The film thickness is, for example, about 0.01 to 1.0 μm. The p-type impurity concentration is 1 × 10 ¹⁸ to 1 × 10 ²¹ / cm ³ and 1 × 10 ^{19 to} 5 × 10 ²⁰ cm ³ . Thereby, bulk resistance can be reduced without reducing crystallinity.
For example, Al _f Ga _1-f N (0 ≦ f <1) and In _l Ga _1-l N (0 ≦ l <1) are used for the p-type contact layer. The p-type impurity concentration is preferably 1 × 10 ¹⁷ / cm ³ or more. Thereby, good ohmic contact with the first electrode, which is an ohmic electrode, is possible. The film thickness is, for example, about 1 to 100 nm.

The second conductive semiconductor layer is preferably formed of a plurality of layers, and examples thereof include a laminate of an n-type contact layer and an n-type cladding layer.
an intermediate layer between the n-type cladding layer or an n-type contact layer and the light-emitting layer may be omitted, a larger composition than the band gap energy of the light emitting layer in the case of providing an intermediate layer, an In _m Ga _{1 −m} N (0 ≦ m <1) is preferable, and Al _j Ga _1-j N (0 <j <0.3) may be used. Although the film thickness is not particularly limited, a specific example is a range of 10 nm to 0.5 μm. The n-type contact layer is preferably Al _n Ga _1-n N (0 ≦ n <1), particularly GaN, and the film thickness is, for example, in the range of 1 μm to 5 μm. Examples of the n-type impurity concentration of each layer include a range of 5 × 10 ^{18 to} 5 × 10 ²¹ / cm ³ .

The first insulating film is usually a film for protecting the exposed surface of the first conductivity type semiconductor layer. The first insulating film is not particularly limited. For example, the first insulating film is formed of a single layer film or a multilayer film of an oxide such as SiO ₂ , Al ₂ O ₃ , ZrO ₂ , or TiO ₂ , or a nitride such as AlN or SiN. Can do. By using an insulating protective film, a short circuit or the like of a light emitting element can be prevented, and yield and reliability can be improved. Further, the light-transmitting property is preferable because light loss can be suppressed when light from the semiconductor layer arrives. The film thickness is, for example, about 0.3 μm to 1 μm.
The first insulating film is usually formed on the exposed surface, that is, around the first electrode when the first electrode described later is formed on the first conductive semiconductor layer. . In this case, the thickness of the first insulating film is approximately the same as that of the first electrode. When the substrate is bonded to the supporting substrate, a flat bonding surface is formed, and the semiconductor layer and the growth are formed. This is preferable because it can prevent bonding failure due to warpage of the substrate.

As shown in FIG. 1, the upper surface 17 a of the first insulating film is disposed on the outer periphery of the semiconductor layer 12 at a position closer to the support substrate 10 than the bottom surface 12 a of the semiconductor layer 12. That is, the first insulating film provided with the same film thickness on the semiconductor layer before bonding is formed so that the thickness of the first insulating film is thinner than that of the bottom surface of the semiconductor layer in at least the outer peripheral region of the semiconductor layer. ing. The thin film portion of the first insulating film may be in the form of a groove surrounding the outer periphery of the semiconductor layer, or may be a thin film as a whole in a region other than directly below the semiconductor layer as shown in FIG. Good. By providing such a thin film portion, that is, the first insulating film surface recessed from the bottom surface of the semiconductor layer on the outer periphery of the semiconductor layer, the light emitted from the light emitting layer to the lower side is strictly on the surface of the first insulating film. Therefore, the light can be effectively reflected at the interface between the sealing member and the first insulating film, which will be described later, and light can be extracted effectively. In other words, the light emitted downward from the light emitting layer at the portion where the thin film-like first insulating film is formed can be once taken into the sealing member, and the light is taken into the sealing member and the first member. By making total reflection at the interface with the insulating film, the light extraction efficiency can be further improved.
In the case where the first insulating film is formed in a groove shape, the first insulating film does not necessarily remain on the entire bottom surface of the groove, and the support substrate is formed on a part or all of the bottom surface of the groove. It may be exposed. In addition, the first insulating film is provided at a position higher than the first electrode, for example, another insulating film, a structure provided via the first electrode, or a semiconductor layer protruding from the surface of the semiconductor layer provided with the first electrode With the structure provided on the surface, the semiconductor layer and the outer peripheral region can have the same film thickness. Preferably, a thin film portion or a groove portion is provided for manufacturing.

These semiconductor layers and the first insulating film are disposed on the support substrate.
The support substrate is usually opaque, but is preferably conductive, and more preferably a semiconductor, a metal, or a metal composite. Thus, a semiconductor light-emitting element having a counter electrode structure can be realized when the support substrate exhibits conductivity. In particular, the metal or the metal composite not only has good conductivity, but also has excellent thermal conductivity, and thus can improve the heat dissipation of the semiconductor light emitting device. The support substrate preferably contains a highly conductive metal and a high hardness metal. Combining a metal material having a high conductivity and a large thermal expansion coefficient with a metal material having a high hardness and a low coefficient of thermal expansion constitutes a substrate having a high conductivity and a coefficient of thermal expansion larger than that of the nitride semiconductor layer. be able to. Examples of the metal material having a high hardness and a large thermal expansion coefficient include Ag, Cu, Au, Pt, and Ge. Examples of the metal material having a high hardness and a small thermal expansion coefficient include W, Mo, Cr, and Ni. Examples of the semiconductor include Si, SiC, and GaAs. Examples of metal composites include composites of two or more metals that are insoluble in each other or have a low solid solubility limit, specifically, Cu-W, Cu-Mo, and metals such as Cu-diamonds. And a composite of ceramics and ceramics.

Moreover, it is preferable that the support substrate has a linear thermal expansion coefficient of about 4 to 10 (× 10 ⁻⁶ / K). Thereby, distortion does not arise between the semiconductor layers, and cracks of the support substrate and the semiconductor can be prevented. The thickness of the support substrate is preferably about 50 to 500 μm, for example, in order to improve heat dissipation.

  Usually, the support substrate and at least the first insulating film are bonded via a bonding layer, and when electrically connecting the electrode of the semiconductor layer (first electrode) and the support substrate, a conductive conductive layer Is used. Here, eutectic metal is mentioned as a conductive layer. In addition to the eutectic metal, one or more conductive layers having reflection, adhesion, barrier function, and the like may be formed. As the non-conductive bonding layer, a resin or the like is used.

  The sealing member is a member that covers the semiconductor layer, and is preferably a material excellent in light resistance and translucency. In particular, in the peripheral portion of the semiconductor layer, the refractive index is higher than that of the first insulating film. It is preferably made of a high material. As for the refractive index difference here, about 0.2-1.0 is mentioned, for example. For example, the refractive index difference between niobium oxide (2.4) or silicon nitride (2.0) and epoxy resin (1.4) is about 1.0 or 0.6, and aluminum oxide (1.7) and silicone resin. (1.5) includes a refractive index difference of about 0.2 (in parentheses indicate the refractive index of each material at a wavelength of 460 nm). As a result, the light radiated from the light emitting layer to the support substrate side is totally reflected by the difference in refractive index at the surface of the first insulating film, that is, at the interface between the first insulating film and the sealing member. The light extraction efficiency can be improved. Further, the light incident on the first insulating film due to the reflection at the interface between the light-transmitting first insulating film and the sealing member is a junction provided between the first insulating film and the support substrate. Reflected by another member, such as a layer. For this reason, it is possible to add a structure for reflecting the incident light by providing a reflective film on the surface of the bonding layer on the semiconductor layer side or on the support substrate side surface of the first insulating film. It is possible to increase. Specifically, in the translucent member, there is a multilayer structure of the first insulating film or a reflective film of DBR or a dielectric multilayer film, which is replaced or laminated thereon, or on the semiconductor layer side surface of the bonding layer. As the film, a reflective metal film, for example, a highly reflective metal film such as Al, Ag, or Rh can be provided. In addition, when the sealing member itself is self-supportingly molded into an appropriate shape, the outer surface can reflect and refract the light emitted from the light emitting layer, suppressing light loss due to the reflective part material such as metal. In order to efficiently extract light to the light extraction surface, it can function as a reflection portion described later.

  Specific examples of the sealing member include organic substances such as epoxy resin, acrylic resin, imide resin, and silicone resin, and inorganic substances such as glass. Moreover, you may contain the fluorescent substance which is excited by the light emission wavelength from a light emitting element, and emits fluorescence. As a result, it is possible to extract light of a desired wavelength and to prevent color unevenness. Moreover, in order to relieve the internal stress of the sealing member and diffuse light, a filler or the like may be contained. Similarly, various colorants may be added in order to have a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements.

The sealing member may be composed of a first sealing member disposed so as to be in contact with the semiconductor layer and a second sealing member for sealing the outside as a so-called package. In this case, a phosphor or the like can be mixed in either or both of the first sealing member and the second sealing member. Thereby, the light extraction efficiency can be improved, and desired color mixture light or white light can be obtained.
Although the upper surface of the sealing member can be a flat surface wider than the semiconductor layer, for example, desired processing may be performed, or a lens shape or a microlens (surface irregularity) shape may be used. Such processing can be realized by molding using a mold, embossing, embossing, or dry or wet etching. It can manufacture preferably by having such a processed shape in the 2nd sealing member which covers a 1st sealing member. Further, a form in which a plurality of semiconductor layers are sealed, that is, a form of a high-power, integrated light source element may be used. For example, the region of the plurality of semiconductor layers separated by the first sealing member is covered with the second sealing member, and optically connected, for example, on the upper surface of the first sealing member. And can be a high output light source.

The phosphor is not particularly limited, and any known phosphor in the art may be used. As green light emitting phosphors, SrAl ₂ O ₄ : Eu, Y ₂ SiO ₅ : Ce, Tb, MgAl ₁₁ O ₁₉ : Ce, Tb, Sr ₇ Al ₁₂ O ₂₅ : Eu (Mg, Ca, Sr, Ba) Ga ₂ S ₄ : Eu, as a blue light emitting phosphor, Sr ₅ (PO ₄ ) ₃ Cl: Eu, (SrCaBa) ₅ (PO ₄ ) ₃ Cl: Eu, (BaCa) ₅ (PO ₄ ) ) ₃ Cl: Eu, (at least one of Mg, Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: Eu, Mn, (at least one of Mg, Ca, Sr, Ba) (PO ₄ ) ₆ Examples of the Cl ₂ : Eu, Mn and red light emitting phosphor include Y ₂ O ₂ S: Eu, La ₂ O ₂ S: Eu, Y ₂ O ₃ : Eu, Gd ₂ O ₂ S: Eu, and the like. In particular, by containing YAG, white light can be emitted, and uses such as a light source for illumination are greatly expanded. YAG _{is, (Y 1-x Gd x} ) 3 (Al 1-y Ga y) 5 O 12: is R (R is, Ce, Tb, Pr, Sm , Eu, Dy, at least 1 or more selected from Ho 0 <R <0.5.) For example, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce It is. As for the particle size of the phosphor, the center particle size is, for example, in the range of 6 μm to 50 μm. A phosphor having such a particle size has a high light absorption rate and conversion efficiency, and a wide excitation wavelength range. The particle size is a value obtained by a volume-based particle size distribution curve as described in, for example, WO2003-65464, and the volume-based particle size distribution curve is obtained by measuring the particle size distribution of a fluorescent substance by a laser diffraction / scattering method. It shall be measurable. In addition, the distribution in the sealing member of a fluorescent substance can be made into the dispersion state distributed to the semiconductor layer, the sedimentation distribution distributed to the support substrate side, and the sealing member.

Examples of the filler include aluminum oxide, barium oxide, barium titanate, and silicon oxide.
Sealing members, phosphors, fillers, and the like include various phosphors known in the art such as those described in WO2006 / 43422, WO2003 / 65464, JP-A-2004-266240, etc. Can be used.

The reflecting portion is disposed at least in the lateral direction of the semiconductor layer, that is, on the outer periphery of the semiconductor layer so as to surround the semiconductor layer. Moreover, it comprises a reflective surface in the side surface direction. The material of the reflection part is not particularly limited, and those known in the art can be used. For example, at least a portion irradiated with light emitted from the light emitting element, that is, the reflective surface may be a part of the outer surface of the sealing resin described above, or preferably a reflective film made of metal or the like. Thereby, the light emitted from the lateral direction of the light emitting element can be effectively guided to the light extraction surface side. The portion irradiated with light may be an inclined plane or a curved surface. Moreover, those angles or curvatures are not particularly limited, and can be appropriately adjusted depending on the characteristics of the light emitting element to be obtained. By providing a reflective portion that is inclined with respect to the surface of the semiconductor layer, the surface of the first insulating film, etc., light can be reflected favorably on the emission direction side from the upper surface of the semiconductor layer. As in the present invention, a complex reflection structure is formed by the upper surface of the first insulating film between the reflective portion and the semiconductor and the reflective portion, so that suitable light emission can be realized above the upper surface of the semiconductor layer. . That is, light from the side of the semiconductor layer is reflected by the reflecting portion, and light from the lower side to the support substrate is reflected by the first insulating film, so that light other than the upper side is preferably reflected upward by the side of the semiconductor layer. It is possible to make a structure.
The reflective film is preferably formed of, for example, silver or a silver alloy, gold or a gold alloy. In addition, when the groove | channel is formed not only on the surface of a reflection part but the 1st insulating film, a reflection film may be formed over the outer peripheral side surface and bottom face of a groove | channel from the surface of a reflection part. Good.
The height of the reflective portion from the support substrate is not particularly limited, but the height of the light emitting portion of the semiconductor layer, for example, the height of the light emitting layer and the active layer is higher than that, preferably higher than the semiconductor layer, The light spreading in the lateral direction can be suitably reflected upward, which is preferable. Further, the sealing member preferably has a height equal to or higher than the height of the light emitting part, preferably covers at least the side surface of the semiconductor layer, and is preferably equal to or higher than the height of the semiconductor layer to favor the light from the side surface. It is preferable to take out light that combines light from the upper surface of the semiconductor layer and light from the side surface from the sealing member by covering the upper surface of the semiconductor layer and providing it higher than the semiconductor layer. This is preferable.

In the method for manufacturing a semiconductor light emitting device of the present invention, first, a semiconductor layer is grown on a growth substrate.
The growth substrate may be any substrate that can epitaxially grow the above-described semiconductor, particularly a nitride semiconductor. For example, an insulating substrate such as sapphire or spinel (MgAl ₂ O ₄ ) having any one of the C-plane, R-plane, and A-plane as a principal plane, silicon carbide (6H, 4H, 3C), silicon, ZnS, ZnO, Examples thereof include oxide substrates such as lithium niobate and neodymium gallate that are lattice-bonded to Si, GaAs, diamond, and nitride semiconductors. In addition, a nitride semiconductor substrate such as GaN or AlN may be used as long as it is thick enough to allow device processing (several tens of μm or more). This substrate may be off-angle, and when a sapphire C-plane is used, a range of 0.1 ° to 0.5 °, preferably 0.05 ° to 0.2 ° is appropriate.
The growth substrate is formed on the growth surface of the semiconductor layer in advance by, for example, low-temperature growth and / or high-temperature growth using a nitride semiconductor represented by the general formula Al _a Ga _1-a N (0 ≦ a ≦ 0.8) It is preferable to form a buffer layer.

On such a growth substrate, the second conductive semiconductor layer, the light emitting layer, and the first conductive semiconductor layer are formed in this order. Here, the semiconductor layer is formed by using a method known in the art such as metal organic chemical vapor deposition (MOCVD), halide vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE). It can be produced by any of the vapor phase epitaxy method, the sputtering method, the ion plating method, the electron shower method and the like.
In addition, the film thickness and the like of each layer can be adjusted as appropriate depending on the material used and the performance of the light-emitting element to be obtained.

A first insulating film is formed on the upper surface of the semiconductor layer, that is, on the first conductivity type semiconductor layer. The first insulating film can be formed by any method known in the art, for example, sputtering, CVD, vapor deposition, or the like.
In the case where the first electrode is electrically connected to the first conductive type semiconductor layer, the first electrode is formed on the first conductive type semiconductor layer by a method known in the art, Thereafter, the first insulating film is preferably formed so as to surround the first electrode.

Subsequently, a support substrate is bonded to the upper surface of the semiconductor layer through at least the first insulating film.
The bonding is usually performed by forming a first bonding layer in advance on the first insulating film and bonding the first bonding layer to the support substrate. Note that a second bonding layer is preferably formed in advance on the surface of the support substrate. Therefore, the first bonding surface may be bonded to the second bonding layer in the support substrate. A conductive layer can be formed by the first bonding layer or the first bonding layer and the second bonding layer, and the semiconductor layer and the supporting substrate can be bonded to each other.

  The first and second bonding layers may be formed of a material that can arbitrarily diffuse to each other and form a eutectic at the time of bonding. Au, Sn, Pd, In, Ti, Ni, respectively. , W, Mo, Au—Sn, Sn—Pd, In—Pd, Ti—Pt—Au, Ti—Pt—Sn, Ni—Ti—Pt—Sn, Ni—Ti—Pt—Au, Ti—Pt—Au -AuSn-Pt-TiSi or the like is preferably used. However, the first bonding layer and the second bonding layer are preferably made of different materials. This is because eutectic is possible at a low temperature and the melting point after eutectic is increased. More specifically, a combination using Sn for the first bonding layer and Au for the second bonding layer can be used. By using a eutectic material for the conductive layer, a layer can be formed at a low temperature, and warping or the like can be prevented by sticking at a low temperature.

Note that an adhesion layer, a barrier layer, or the like is preferably provided from the first insulating film side between the first insulating film and the first bonding layer. The adhesion layer is a layer that ensures high adhesion with the first electrode, and can be formed of Ti, Ni, W, Mo, or the like. The barrier layer is a layer that prevents the metal constituting the first bonding layer from diffusing into the adhesion layer, and can be formed of Pt, W, or the like. In order to further prevent the metal of the first bonding layer from diffusing into the adhesion layer, an Au film may be formed between the barrier layer and the first bonding layer. It is preferable that an adhesion layer, a barrier layer, and an Au film are provided between the second bonding layer and the support substrate from the support substrate side.
As a combination of the adhesion layer, the barrier layer, and the bonding layer, for example, Ti—Pt—Au, Ti—Pt—Sn, Ti—Pt—Pd, Ti—Pt—Pd—Sn, Ti—Pt—AuSn, and W—Pt— Sn, RhO-Pt-Sn, RhO-Pt-Au, RhO-Pt- (Au, Sn), etc. can be mentioned.
The film thicknesses of the first bonding layer and the second bonding layer are not particularly limited. After the bonding between the support substrate and the semiconductor layer, the conductive layer is, for example, about 2 to 3 μm. It is preferable to set the film thickness.

  The bonding is preferably performed using heat pressure welding. As for the temperature of heating press-fit, 150 degreeC-350 degreeC is mentioned, for example. Thereby, the diffusion of the metal in the conductive layer is promoted, a eutectic with a uniform density distribution is formed, and the adhesion between the semiconductor layer and the support substrate can be improved.

  After bonding the supporting substrate, the above-described growth substrate and a part of the semiconductor layer are removed. Thus, one surface of the semiconductor layer, that is, the surface of the second conductivity type semiconductor layer is exposed, and the side surfaces thereof are also exposed, so that a plurality of semiconductor layers are formed separately on the support substrate.

  Here, the growth substrate can be removed by, for example, irradiating or polishing an excimer laser from the growth substrate side. In this removal, not only the growth substrate but also a part of the buffer layer and the semiconductor layer may be removed. Note that after the removal, the exposed surface of the exposed semiconductor layer is preferably subjected to a CMP (Chemical Mechanical Polishing) treatment. Thereby, removal of a damage layer etc., adjustment of the thickness of a semiconductor layer, adjustment of surface roughness, etc. can be performed. The exposed surface of the semiconductor layer can increase the light extraction efficiency, for example, by providing unevenness. The unevenness on the semiconductor surface can be formed by etching such as RIE using a mask pattern, for example. Alternatively, it may be formed by etching using a desired etchant (for example, hot potassium hydroxide, hot phosphoric acid, etc.).

  A part of the semiconductor layer can be removed by dry etching such as RIE or wet etching, and the semiconductor layer can be separated into a plurality of regions.

Subsequently, a frame surrounding each semiconductor layer is formed on the supporting substrate, that is, on the first insulating film. The frame here can be used later to reflect light emitted from the light emitting element, and in that case, the frame is preferably formed to have a predetermined reflecting surface.
The method for forming the frame is not particularly limited. For example, a metal film is formed on almost the entire surface by a known method such as electroless plating, vapor deposition, or sputtering, and photolithography and etching processes are used. Then, a method of removing the metal film by etching or the like so as to leave the frame body between the semiconductor layers can be mentioned. The shape, inclination angle, curvature, etc. of the reflecting surface of the frame can be adjusted as appropriate depending on the type of metal, etching method, or etchant combination. For example, when an Au film is used as the metal film, it can be formed as an inclined surface having an inclination angle of about 40 to 80 ° using aqua regia. Further, as a method not using the etching characteristics of such a material, a desired curved surface can be formed by using anisotropic or isotropic etching, for example, RIE. By bending the reflecting portion, a reflecting structure that collects light by a parabolic surface or the like can be provided.

  After forming the frame, at least the first insulating film on the outer periphery of the semiconductor layer is removed in the thick film direction. The removal here can be performed, for example, by wet etching or dry etching using an appropriate mask pattern and / or frame as a mask. The degree of removal is not particularly limited and can be appropriately adjusted depending on the intended size of the light-emitting element. Usually, when the semiconductor layer and the supporting substrate are bonded to each other, the upper surface position of the first insulating film matches the position of the bottom surface of the semiconductor layer. Therefore, by the removal here, for example, about 0.1 μm from the bottom surface, further about 0.2 μm, the upper surface position of the first insulating film approaches the support substrate, or the thin film portion of the first insulating film It is suitable that the film thickness of the groove is about 0.1 μm or less and about 0.2 μm or less. That is, it is preferable that the first insulating film is dug down to about 0.1 to 0.4 μm, and further about 0.2 to 0.3 μm. For example, it is preferable to remove the first insulating film with a width of about 5 μm or more from the outer edge of the semiconductor layer so as to have a groove shape. When etching is isotropically performed, not only the outer periphery of the semiconductor layer but also the portion immediately below the semiconductor layer extending from the first insulating film on the outer periphery may be slightly removed. In such a case, removal of the etching by wrapping directly under the semiconductor layer is allowed, and a suitable light extraction can be realized at the portion by extending the sealing member in the gap in the region of the semiconductor layer. . On the other hand, if the number of recesses in the semiconductor layer region of the first insulating film increases, the adhesiveness tends to decrease. Therefore, it is preferable that there is a remaining portion from the recess.

The removal of the first insulating film in the film thickness direction may be performed at any stage before forming the frame body and after forming the frame body. Therefore, the frame body may be disposed so as to surround the region where a part of the first insulating film is removed, or may be disposed within the region where the first insulating film is removed in the film thickness direction. May be.
In addition, the first insulating film is removed in the film thickness direction by etching using the frame and / or an appropriate mask pattern both before and after the frame is formed. be able to. Further, the semiconductor layer can be used as a mask. Further, the reflective film can be formed in the thin film region (in the groove) of the reflective portion and the first insulating film by using the mask pattern as it is. For example, by etching the first insulating film using a mask for separating and forming the semiconductor layer, a recess extending in the outer peripheral direction from the side surface of the semiconductor layer can be formed, and the semiconductor layer and the frame body can be used as a mask. Etching with this etchant can form a recess between the frame (reflecting part) and the semiconductor layer. As shown in FIG. 1, when the recess between the semiconductor layer and the reflecting portion is provided as far as the distance from the semiconductor layer to the reflecting portion, light in the vicinity of the semiconductor layer is suitably reflected, as shown in FIGS. In addition, when the end portion of the recess extending from the semiconductor layer is provided to the reflection portion, a sealing member is preferably provided, and as shown in FIG. 2, when the reflection portion is provided in the recess of the first insulating film, The light from the semiconductor layer can be favorably reflected by the reflecting portion at a position lower than the bottom surface.

Subsequently, the semiconductor layer is covered with a sealing member. The coating here can be formed by a method known in the art, such as a printing method or an injection method using a frame. In addition, when coat | covering a sealing member, a sealing member can be arrange | positioned inside using the frame mentioned above. However, the frame body may be removed after the sealing resin is self-supported.
When the phosphor is added, the thickness of the upper surface of the sealing member can be determined in consideration of the particle size, the mixing amount, the arrangement location, the amount of heat generated from the semiconductor layer, and the like. Specifically, it is preferable to set the thickness of the upper surface of the sealing member to 10 μm to 100 μm because the degree of freedom of the type and arrangement position of the phosphors is increased. Here, it is preferable that at least a part of the inclined surface is included in the support substrate, and the sealing member corresponding to the height of the semiconductor layer is included in the support substrate. It is preferable to do. Thereby, it is suitably used as a dice size light source. The supporting substrate is, for example, 103% to 120% of the semiconductor layer area, 3 to 20% of the exposed area of the semiconductor layer, for example, 20 to 50 μm for a semiconductor layer of 1 mm. Further, the area of the upper surface of the sealing member is preferably +10 to 100% (110 to 200%) as compared to the upper surface of the semiconductor layer, which is preferable because a suitable light source can be obtained.

  Further, the frame and the support substrate are cut to obtain a semiconductor light emitting element. The frame body and the support substrate may be cut using any method known in the art. In addition, although a frame and a support substrate may be divided | segmented for every semiconductor layer of 1 unit, you may divide a support substrate so that a several semiconductor layer and frame may be provided. In this case, each semiconductor layer may be sealed with a sealing member, a plurality of semiconductor regions may be integrally covered with the sealing member, or the first sealing may be performed for each individual semiconductor layer. It may be sealed with a stop member, and a plurality of semiconductor regions may be integrally covered with a second sealing member.

  In the semiconductor light emitting device and the method for manufacturing the same according to the present invention, the first and second conductive semiconductor layers are usually formed with electrically connected first and second electrodes, respectively. ing. These electrodes may be formed on each layer so as to be opposed to each other with the semiconductor layer interposed therebetween, or the first electrode and the second electrode are taken out to the support substrate side (see FIG. 4), the semiconductor Any of the forms in which the first electrode and the second electrode are taken out to the layer side may be used.

  For example, the first electrode can be selected from the group consisting of Ag, Rh, Ni, Au, Pd, Ir, Ti, Pt, W, Al, and alloys thereof. These may be a single layer or a laminated structure. The first electrode may be formed on the entire surface of the first conductivity type semiconductor layer or may be formed partially. For example, the first electrode has a rectangular shape, stripe shape, square shape, lattice shape, dot shape, rhombus shape, parallelogram shape, mesh shape, stripe shape, or one or more than the semiconductor layer. It can be formed into a pattern such as a branched branch. Especially, it is preferable that the size is smaller than a semiconductor layer. The film thickness of the first electrode is, for example, about 0.1 to 1.5 μm.

  The second electrode is made of, for example, Ti—Al—Ni—Au, W—Al—W—Pt—Au, Al—Pt—Au, Ti—Pt—Au, etc. It can be formed with a thickness. A structure in which the first electrode is disposed to face the semiconductor layer is preferable. In that case, as shown in FIG. 5, when the surface of the semiconductor layer facing each electrode is exposed from the other electrode, as shown in FIGS. Also, current diffusion and emission extraction are improved. Since the first electrode is provided on the support substrate side and is provided on the surface of the semiconductor layer opposite to the light extraction side surface, a highly reflective film suitable for light reflection, for example, an electrode such as Rh or Ag is preferable. A highly reflective film such as Al, Rh, Ag, or the like may be provided via a translucent electrode such as ITO.

  Note that in the case where the second electrode is formed on the surface of the semiconductor layer from which the growth substrate is removed, after the second electrode is formed, the second electrode is formed on the second conductive type semiconductor layer that becomes the exposed surface of the semiconductor layer. It is preferable to form two insulating films. Thereby, it is possible to prevent a short circuit at the time of chipping due to dicing or the like at the time of chip formation. The second insulating film can be made of the same material as the first insulating film. In addition, an uneven structure may be formed on the light extraction surface on the second electrode side, such as the surface of the second insulating film or the surface of the second conductivity type layer. By forming such irregularities, light extraction efficiency can be improved by utilizing irregular reflection of light or the like.

Further, when a conductive layer for external connection for wire bonding is formed on the second electrode, when the frame is formed, the frame 18a and the second electrode 20 are also formed on the second electrode 20 as shown in FIG. A similar frame 18b may be left and used as a conductive layer for external connection.
Here, the frame body 18b can also be used as a mask for applying the sealing member 19 and a mask for providing an opening for external connection in the second electrode.
As shown in FIG. 4, the frame body 18 b can also be used as a mask for the second sealing member 24 when forming the second sealing member 24. However, a mask pattern may be provided separately without necessarily using the frame as a mask. In particular, as a sealing member, a resin layer or the like is used by a printing method in which openings are patterned in a desired region in advance. Also good.

Further, as shown in FIG. 5, the frame 18b may be used as a conductive member (for example, a ball or a bump) 27 for external connection by etching the frame 18b into an appropriate shape and size. At this time, if the frame 18a is also etched at the same time as the etching of the frame 18b, the outer surface of the sealing member 19 can be used as a reflection portion, and an opening for external connection is provided in the second electrode 20. It becomes possible.
Further, when the second electrode 20 is provided on the support substrate 10 side, as shown in FIG. 6, a wiring layer 25 is provided on the surface or inside of the support substrate 10, and a conductive layer for external connection in the lateral direction. 27 may be formed.
Furthermore, in the structure of FIGS. 1-5, a support substrate and a 1st electrode can be electrically connected, and an electrode can be provided in the back surface of a support substrate (not shown), and it can become an external extraction electrode of a 1st electrode. Also, as shown in FIG. 6, the first and second electrodes are bonded to the support substrate, and wiring via holes, wiring structures, etc. (not shown) are formed in the support substrate 10 corresponding to the respective electrodes. The electrode layer 26 of each electrode may be provided on the back side of the support substrate 10. This eliminates the need to form wire bonding on the outside, thereby preventing light from being blocked and absorbed by the wire and avoiding the occurrence of wire defects.
In addition, it is preferable that the optical output has a structure in which the semiconductor layers are disposed to face each other with the semiconductor layer interposed therebetween.
In another form, as shown in FIG. 6, the conductive layer on the support substrate 10 is provided separately from each other corresponding to the first and second electrodes. It is possible to provide a structure for external connection on the outside of the wire, and light shielding by the wire can be prevented.

Thereafter, it is preferable to form a light emitting device.
First, the obtained light emitting element is mounted on a heat sink provided with a lead frame, and a conductive wire is bonded from the light emitting element to the lead frame. Then, the light emitting device can be formed by covering with the same material as the sealing member described above.
As another example of the light emitting device, a package resin having a heat sink is prepared, a light emitting element is mounted on the heat sink, and a conductive wire is bonded from the light emitting element to the lead frame. Thereafter, a sealing resin such as silicone is applied on the light emitting element. Furthermore, a lens or the like can be formed thereon to form a light emitting device.
Note that the light emitting device is preferably provided with a protective device for protecting the semiconductor light emitting device from static electricity. The supporting substrate can also be such a protective element, for example, a Zener diode.

Hereinafter, the semiconductor light emitting device and the method for manufacturing the same according to the present invention will be described in detail.
Example 1
As shown in FIG. 1, the light-emitting element of this embodiment includes a support substrate 10, a first electrode 13 and a first insulating film 17 (refractive index: about 1.4) made of SiO ₂ disposed in the periphery thereof. ), The semiconductor layer 12 including the first conductive type semiconductor layer 14, the light emitting layer 15, and the second conductive type semiconductor layer 16, the reflective portion 18 provided in the side surface direction of the semiconductor layer 12, and the support substrate 10 and a sealing member 19 that covers the semiconductor layer 12.
The first insulating film 17 has a groove shape in which the upper surface 17 a is disposed on the outer periphery of the semiconductor layer 12 at a position closer to the support substrate 10 side than the bottom surface 12 a of the semiconductor layer 12. In this case, the groove has a width of about 5 μm, for example, a range of 2 to 50 μm and a depth of about 0.2 μm.
Further, the sealing member 19 is formed of a silicone resin (refractive index: about 1.5) containing 10 to 40% of a phosphor (for example, YAG).
The reflecting portion 18 is made of Au, has a substantially flat reflecting surface, and an inclination angle of about 66 ° from the surface of the support substrate 10.

This light emitting element can be formed by the following manufacturing method.
First, as shown in FIG. 7A, as a growth substrate 21, a sapphire (C-plane) substrate is set in a MOVPE reaction vessel, and after cleaning the substrate, the temperature is set to 510 ° C., A buffer layer (thickness: about 20 nm) made of GaN is grown on a substrate using hydrogen as a carrier gas and ammonia, TMG (trimethylgallium), and TMA (trimethylaluminum) as source gases.

Thereafter, an n-type semiconductor layer is formed as a second conductive semiconductor layer as follows.
First, only TMG is stopped, the temperature is raised to 1050 ° C., TMG and ammonia gas are used as source gas, undoped GaN layer (film thickness: 1.5 μm), silane gas is used as impurity gas, Si is 4.5 × An n-type contact layer (film thickness: 2.25 μm) made of GaN doped with 10 ¹⁸ / cm ³ , an undoped GaN layer (film thickness: 300 nm), and a GaN layer doped with Si of 4.5 × 10 ¹⁸ / cm ³ (film) (Thickness: 30 nm) is grown, and an undoped GaN layer (film thickness: 5 nm) is grown to form a semiconductor layer having a total thickness of 3350 angstroms consisting of three layers.

Thereafter, a barrier layer (thickness: 20 nm) made of undoped GaN and a well layer made of undoped In _0.3 Ga _0.7 N are grown to a thickness of 3 nm. Then, 5 layers of barrier layers and 4 layers of well layers are stacked alternately in the order of barrier + well + barrier + well .... + barrier to grow a light-emitting layer having a multiple quantum well structure with a total thickness of 112 nm. Let

Next, a p-type semiconductor layer is formed as a first conductivity type semiconductor as follows.
Mg and 1 × ¹⁰ 20 / cm ³ doped with p-type _Al 0.2 _{Ga 0.8} N layer (thickness: 4nm), 1 × a Mg ¹⁰ 20 / cm ³ doped with _{an In} 0.03 _{Ga 0.97} N Layer (film thickness: 2.5 nm) is repeated, 5 layers are alternately stacked, and finally a p-type Al _0.2 Ga _0.8 N layer (film thickness: 4 nm) is grown. A film (film thickness: 36.5 nm) is grown on a p-type contact layer (film thickness: 120 nm) made of p-type GaN doped with 1Mg at 1 × 10 ²⁰ / cm ³ .
Thereby, the semiconductor layer 12 is formed.

  After completion of the reaction, the temperature is lowered to room temperature, and the wafer is annealed in a reaction vessel at 700 ° C. in a nitrogen atmosphere to further reduce the resistance of the p-type layer.

After annealing, the wafer is taken out of the reaction vessel, and a p-electrode is formed as the first electrode 13. For the p-electrode (film thickness: about 0.3 μm), Ni / Ag / Ni / Ti / Pt is 0.6 nm-100 nm-100 nm-100 nm, and the first insulating film 17 is SiO ₂ (film thickness: about 0). 3 μm) are alternately arranged adjacent to each other on the p-type contact layer as shown in FIG. Further, heat treatment annealing of the electrode is performed.
In order to form the conductive layer, as the first bonding layer 11a, an adhesion layer, a barrier layer, and a eutectic layer are formed on the first electrode 13 and the first insulating film 17, and Ti—Pt—Au—Sn—. The layers are formed in the order of Au with a film thickness of 200 nm-300 nm-300 nm-3000 nm-100 nm.

  Separately, a support substrate (film thickness: 200 μm) 10 made of Si is prepared. The support substrate 10 has a second bonding layer (not shown) in which TiSi—Pt—Au (film thickness: 200 nm-300 nm-1200 nm) is sequentially formed on the Au film (FIG. 7). (See (b)).

  Next, as shown in FIG. 7B, the first bonding layer 11 a formed on the first electrode 13 and the first insulating film 17 and the second bonding layer of the support substrate 10 are bonded together. Then, the heater set temperature is set to 280 ° C., press pressure is applied, and the conductive layer 11 made of eutectic metal is formed.

Thereafter, the sapphire substrate which is the growth substrate 21 and optionally a buffer layer (not shown) are removed by LLO (laser lift-off), and the n-type contact layer which is the exposed surface of the semiconductor layer 12 is polished.
Further, by RIE, the semiconductor layer 12 is etched to reach the first insulating film 17 so as to be partitioned into LED chip units, and separated into a plurality of semiconductor layers 12. At this time, a groove may be provided in the first insulating film.

Subsequently, an n electrode which is a second electrode (not shown) is formed on the n-type contact layer in the order of Ti—Al—Ti—Pt—Au with a film thickness of 10 nm-250 nm-100 nm-200 nm-600 nm. Further, the upper surface of the semiconductor layer exposed from the second electrode is subjected to uneven processing at a depth to remove a part of the n-type layer by an etching means such as wet etching or RIE, and further, a protective film of SiO ₂ Is formed on the upper surface of the exposed electrode (not shown).

  Next, as shown in FIG. 7C, an Au film is formed on the first insulating film 17 between the semiconductor layers 12 so as to surround the semiconductor layer 12 (square shape of about 1 mm in this example). A frame body 18a (in this example, a lattice-shaped frame body in which the semiconductor layer separated into the rectangular shape is removed) is formed in a basket. The frame body 18a is formed by forming an Au film on almost the entire surface by electroless plating, forming a mask pattern 23 thereon, and performing wet etching with potassium iodine iodide using the mask pattern 23, so that the inclination angle is increased. It can be formed at about 66 °. Here, the width between the semiconductor layers is about 100 μm, the width of the frame body is about 70 μm, the distance between the frame body and the semiconductor layer is about 15 μm, and the height of the frame body is higher than the semiconductor layer, about 30 μm.

  Thereafter, the first insulating film 17 is dug in the film thickness direction while leaving the mask pattern 23, thereby forming a groove in the first insulating film 17 on the outer periphery of the semiconductor layer 12. In this case, the groove width is about 10 μm and the depth is about 0.2 μm.

Next, a phosphor-containing resin is applied as a sealing member 19 to the space surrounded by the frame 18 a to seal the semiconductor layer 12. Here, the height of the sealing member from the semiconductor layer is about 20 μm.
Subsequently, the frame body 18 a and the support substrate 10 are diced and divided for each semiconductor layer 12 to form a semiconductor light emitting device sealed with a sealing member 19.
In the obtained semiconductor light emitting device, as shown in FIG. 1, the light emitted from the lateral direction of the light emitting layer is reflected by the reflecting portion, and the light can be efficiently extracted to the upper surface and emitted in the lower lateral direction. The incident light directly enters the sealing member 19, is reflected at the interface between the sealing member 19 and the first insulating film 17, is directed upward, and light can be efficiently extracted to the upper surface.
Further, since the upper surface of the first insulating film 17 is further lowered to the support substrate side than the bottom surface of the semiconductor layer at the outer peripheral portion in the very vicinity of the semiconductor layer, the lower surface passes through the semiconductor layer from the light emitting layer. The light emitted in the lateral direction can be more efficiently reflected by the refractive index difference between the sealing member and the first insulating film, and the light emitted from the element can be extracted from the main surface side without waste. It becomes possible.

  The semiconductor light-emitting device of the present invention and the manufacturing method thereof include a light-emitting device such as LED and LD, a light-receiving device such as a solar cell and an optical sensor, an electronic device such as a transistor and a power device, a full-color display using these, a signal display, It can be suitably used for media such as image scanners, optical disc light sources such as DVDs that store large amounts of information, communication light sources, printing equipment, illumination light sources, and the like.

It is a schematic sectional drawing of the semiconductor light-emitting device of this invention. It is a schematic sectional drawing for demonstrating the manufacturing process of the semiconductor light-emitting device of this invention. It is a schematic sectional drawing for demonstrating the manufacturing process of another semiconductor light-emitting device of this invention. It is a schematic sectional drawing for demonstrating the manufacturing process of another semiconductor light-emitting device of this invention. It is a schematic sectional drawing for demonstrating the manufacturing process of another semiconductor light-emitting device of this invention. It is a schematic sectional drawing of another semiconductor light-emitting device of this invention. It is a schematic cross section explaining the manufacturing process of the semiconductor light emitting element of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Support substrate 11 Conductive layer 11a 1st joining layer 12 Semiconductor layer 13 1st electrode 14 1st conductive semiconductor layer 15 Light emitting layer 16 2nd conductivity type semiconductor layer 17 1st insulating film 18 Reflecting part 18a, 18b Frame Body 19 Sealing member 20 Second electrode 21 Growth substrate 23 Mask pattern 24 Second sealing member 25 Wiring layer 26 Electrode layer 27 Conductive member for external connection

Claims (14)

A support substrate; a semiconductor layer disposed on the support substrate with at least a first insulating film interposed therebetween; a reflective portion provided in a side surface direction of the semiconductor layer; and a seal that covers the semiconductor layer on the support substrate. A semiconductor light emitting device comprising a stop member,
The first insulating film is a semiconductor light emitting element characterized in that the upper surface of the first insulating film is disposed closer to the support substrate than the bottom surface of the semiconductor layer on the outer periphery of the semiconductor layer.   The semiconductor light emitting element according to claim 1, wherein the first insulating film has a shape of a groove surrounding the outer periphery of the semiconductor layer. The sealing member covers the side surface of the semiconductor layer, the outer periphery of the semiconductor layer, the upper surface of the first insulating film, and the reflective portion disposed outside the upper surface of the first insulating film;
The semiconductor light emitting element according to claim 1, wherein a height of the reflecting portion from the support substrate is higher than or equal to that of the semiconductor layer. The sealing member is translucent and covers the upper surface of the semiconductor layer;
The semiconductor light emitting element according to claim 3, wherein the first insulating film is translucent and has a refractive index smaller than that of the sealing member. A first electrode on the support substrate side surface of the semiconductor layer, a second electrode on the surface of the semiconductor layer facing the surface, respectively,
The first electrode is electrically connected to the support substrate;
The semiconductor light emitting device according to claim 4, wherein the first insulating film extends from the first electrode to the outer periphery of the element on the surface of the semiconductor layer on the support substrate side.   The semiconductor light emitting element according to claim 1, wherein the sealing member contains a phosphor.   The semiconductor light emitting element according to claim 1, wherein the first insulating film is silicon oxide, and the sealing member is made of a material having a refractive index larger than that of silicon oxide.   The semiconductor light-emitting element according to claim 1, wherein the reflection portion includes a reflection surface made of a metal film that is inclined or curved at least in part.   The semiconductor light-emitting element according to claim 1, wherein the reflection portion includes a reflection surface made of at least a part of the surface of the sealing resin.   The semiconductor light emitting element according to claim 1, wherein the sealing member includes a first sealing member and a second sealing member that covers the outside of the first sealing member.   The semiconductor light emitting element according to claim 10, wherein the second sealing member contains a phosphor. Manufacturing of a semiconductor light emitting device in which at least a first insulating film and a semiconductor layer are stacked in this order on a support substrate, a reflective portion is provided in a side surface direction of the semiconductor layer, and the semiconductor layer is covered with a sealing member. A method,
Growing a semiconductor layer on the growth substrate,
The upper surface of the semiconductor layer is bonded to the support substrate through at least the first insulating film,
A plurality of semiconductor layers are separately formed on a supporting substrate by removing a part of the growth substrate and the semiconductor layer,
Forming a frame surrounding each semiconductor layer on the support substrate;
Removing at least a part of the first insulating film on the outer periphery of the semiconductor layer in the film thickness direction and bringing the exposed surface closer to the support substrate than the bottom surface of the semiconductor layer;
A method of manufacturing a semiconductor light emitting element, comprising: covering the semiconductor layer and the exposed surface of the first insulating film in the frame on the support substrate with a sealing member. Having a first electrode on the bottom surface of the semiconductor layer;
The method for manufacturing a semiconductor light-emitting element according to claim 12, wherein the bonding is performed by forming a conductive layer by eutectic bonding, and the first electrode and the support substrate are electrically connected.   The method for manufacturing a semiconductor light emitting element according to claim 12, further comprising a step of cutting the frame and the support substrate to obtain a semiconductor light emitting element.

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