200935619 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種固態發光元件的製作方法及发產 品，特別是指-種垂直導通式發光二極體的製作方法及其 蓋品 ° 【先前技術】 參閱圖1，目前垂直導通式發光二極體丨包含一在提供 © 電能時以光電效應產生光的磊晶膜單元u、一設置在該磊 晶瞑單元11底面116用以反射光的反射鏡12、一設置在該 轰晶膜單元U頂面⑴上的電極13,及—連捿在該反射鏡 12上的基板14。 該蠢晶膜單元Π主要是由氮化鎵系列半導體材料在一 晶格相匹配的磊晶基板磊晶形成，具有分別經過摻雜而成p 、η型的P型坡覆層（p-type Cladding 〗ayer) U1、n型披覆 層 112 (p-type cladding layer、n-type cladding layer)，及一 &層形成在該.p、n型批覆層111、112之間的主動層113，該 ρ、η型批覆層111、112相對該主動層113形成載子能障而 在對該主動層113提供電能產生電子-電洞複合、釋放能量 ，進而轉換成光，為了提昇出光效率，該蟲晶膜單元11的 頂面115會再經過粗化而成粗链面避免全反射的發生，盡量 使磊晶膜單元11發出的光直接經過頂面115進入外界。 該反射鏡12以具有高反射率的材料形成在該磊晶膜單 元11的底面116,使得該磊晶膜單元11產生且朝向該底面 116方向行進的光反射而再經過頂面Η5進入外界，以提昇 200935619 元件整體的 ㈤九效率。一般，反射鏡12是以具有高反射率 係數的金屬為材料構成，並與該蟲晶料元11形成歐姆接 觸’以同時具有導電的功能。 該基板14是以可導熱與導電的材料，通常是合金、或 疋金屬構成’並與該反射鏡12相連接以支撐該磊晶膜單元 11、反射鏡12的結構’並配合設置在該磊晶膜單元11頂面 的電極13作為另一電極使用，以對該磊晶膜單元11提供電 月匕’同時可將該磊晶膜單元11作動時產生的廢熱經過反射 鏡12導離該磊晶膜單元n，使該磊晶膜單元n作動時的 操作接面溫度不致過高而影響到載子輻射復合效率（ radiative recombination efficiency)。 當自該電極13與基板14配合施加電能時，電流流通 過該p、n型批覆層111、112與主動層113,而以光電效應 產生光子’產生的光部分直接朝向頂面115行進，並因粗化 後的頂面115而較有較大的機平穿出向外發射，部分朝向底 面116行進的光，藉該反射鏡12反射後朝向頂面ι15方向 行進’並類似地藉著粗化的頂面115而有較大的機率穿出向 外發射。 上述的垂直導通式發光二極體1，是先將氮化鎵系列半 導體材料磊晶於適當的磊晶基板’於其上磊晶形成該p、n 型批覆層111、112、主動層113’製作得到磊晶膜單元^ 後，再於此結構之最上層鍍上反射鏡12，而後將基板14以 晶圓貼合方式，與此反射鏡12相結合，然後再移除掉磊晶 基板讓磊晶麒單元11的底面（η型披覆層in的頂面）裸 200935619 露出來，進行粗化製程、設置電極13，即製作得到垂直導 通式發光二極體1。 就這樣的垂直導通式發光二極體1而言，其較大的問 題在於製造過程中導致的結構質變問題，更詳細地說，由 於磊晶膜單元11、反射鏡12與基板14彼此靠晶圓貼合（ wafer bonding)技術（也就是’合金接合’）進行貼合，所以 還是會有連接不夠緊密、製程良率低的問題，此外，反射 ❹ Ο 鏡12形成後必須經過一道高溫（2〇〇ec〜400°C )晶圓貼合 過程而與磊晶膜單元11形成歐姆接觸（同時晶圓貼合），而 這樣的高溫處理過程會導致反射鏡12的質變，進而影響反 射的效果、降低元件的光取出效率。另一方面，為提高製 程之良率，與永久基板貼合之磊晶膜，通常需達一定程度 之表面平整度，導致此類元件只能製作成具單面粗化之元 件結構（以本例而言，僅能製作出n型披覆層相對遠離基 板I4而位於上方的n_side up的垂直導通式發光二極體）， 如此-來’元件之外部量子效率尚有提升的空間。 基於先前技術之考量，目前垂直導通式發光二極體i 的製作過程必須重新加以設計，以克服製造過程而導致的 門題，同時也可提供另—種態樣的垂直導通式發光二極體 供市場選擇。 【發明内容】 四此’本發明目的，在提供一種具 式發光二極體之製造方法。 此外，本發明的£ 1 的另一目的’在提供一種具雙面粗 200935619 直導通式發光二極體。 於是，本發明一種具雙面粗化垂直導通式發光二極體 之製造方法包含以下八個步驟。 (a) 粗化連接在一第—基板上的一磊晶膜單元的一相 反於該第一基板的第一表面，該磊晶膜單元以氮化鎵系列 半導體材料磊晶形成且在提供電能時以光電效應產生光。 (b) 在該粗化後的第一表面上形成多數高度實質均等 ❹ 並與該屋晶膜單元相歐姆接觸的導電塊。 (e)自該粗化後的第一表面上未形成有導電塊的區域 向上形成一高度實質均等且大於該導電塊高度的光入射膜 〇 (d) 自該等導電塊與光入射膜向上形成一高度實質均 等且可反射光與導電的光反射膜。 (e) 準備一具有一導電層的第二基板。 (f )將一在晶圓貼合溫度範圍呈液態的黏著劑在晶圓 > 貼合溫度下塗佈在該光反射膜上。 (g) 在晶圓貼合溫度下，將該第二基板以該導電層與 該光反射膜相接觸地連接後降溫至常溫，使該第二基板的 該導電層對應於形成有光入射膜的區域是以晶圓貼合方式 與該光反射膜彼此接合，且對應於形成有導電塊的區域藉 該黏著劑與該光反射膜彼此相連接。 (h) 移除該第一基板。 再者，本發明一種具雙面粗化垂直導通式發光二極體 包含一磊晶膜單元、一電極、一反射鏡、一黏著層，及— 8 200935619 第二基板。 該轰晶膜單元提供電能時以光電效應產生光並具有相 反且經過粗化的一第_表面與一第二表面。 該電極叹置在該第二表面上並與該磊晶膜單元相歐姆 接觸。 该反射鏡與該第一表面相連接，具有複數實質等高的 導電塊、-厚度遠大於該等導電塊高度的光入射膜，及一 成在該光人射膜上且厚度實質均等的光反射膜，該多數 導電塊間隔地設置在該第一表面上並與該蟲晶膜單元相歐 姆接觸’該光入射膜以折射率小於該蠢晶膜單元的材料形 成在該第-表面未連接有該等導電塊的區域上，該光反射 膜以具有高反射率且可導電的材料形成。 該黏著層設置在該光反射膜對應於該等導電塊的區域 上且回度與該光反射膜對應於光入射膜的區域齊平。 》 該第二基板可導電而與該電極相配合地對該磊晶膜單 凡提供電能’且與該光反射膜以晶圓貼合方式連結，與該 黏著層以黏結方式連結。 本發明的功效在於：同時藉由接著劑與晶圓貼合技術 使第二基板與磊晶膜單元更穩固的連接，並將整個製程控 制在不大於晶圓貼合製程溫度範圍（2〇(rc以下）進行，而 可以克服反射鏡需高溫製程才能與磊晶膜單元相歐姆接觸 ，而尚溫製程又會導致反射鏡發生質變的問題，使製作出 的元件具有更南的發光效率。 【實施方式】 9 200935619 ，在 將可 有關本發明之前述及其他技術内容、特點與功效 以下配合參考圖式之二個較佳實施例的詳細說明中， 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 β Ο 參閱圖2、《 3,本發明一種具雙面粗化垂直導通式發 光二極體之製造方法的—第—較佳實施例，是製作出如圖3 所示的具雙面粗化垂直導通式發光二極體3,因為這樣的具 雙面粗化垂直導通式發光二極體3的ρ_型彼覆層是相對遠 離基板而在上方的，所以業界慣稱為p_sideupLED。 本發明的低溫製造方法在先了解製作出的具雙面粗化 垂直導通式發光二極體3的結構後，當可更加清楚的明白 先參閱圖3,以本發明的製造方法的第一較佳實施例製 作的具雙面粗化垂直導通式發光二極體3包含一在提供電 能時以光電效應產生光的蟲晶膜單元31、一設置在該蟲晶 膜單元31上的電極32、一與該磊晶膜單元31連接的反射 鏡33、一黏著層34’及一連接在該反射鏡33上的第二基 板35。 該遙晶膜單元31由氮化蘇系列半導體材料在一晶格相 匹配的第一1基板51 (蠢晶基板）蠢晶形成（圖未示），具有 分別經過摻雜而成ρ、η型的第一、二彼覆層311、312 (p-type cladding layer、n-type cladding layer)、一層形成在該 第一、二批覆層311 '312之間的主動層313，及一層以透 10 200935619 明且可導電的材料形成在該第一彼覆層311上的電流擴散層 314，該第一、二披覆層311、312相對該主動層313形成載 子能障而在對該主動層313提供電能產生電子_電洞複合、 釋放能量，進而轉換成光，該電流擴散層314讓電流橫向 均勻擴散，提昇内部量子效應，該磊晶膜單元U的第一、 一表面3 15、316 (磊晶膜單元的底面、頂面）都經過粗化 而成粗链面避免全反射的發生，提昇光通過的機率。 ❹ ❹ 該反射鏡33具有多數導電塊331、一光入射膜332， 及一光反射膜333，該多數導電塊331間隔地設置在該第一 表面315上並與產晶膜單元11形成歐姆接觸，且每一導電 塊331的高度實質均等，該光入射膜332以折射率小於形 成該磊晶膜單元11的氮化鎵系列半導體材料的材料（例如 氧化矽）構成，且厚度大於該等導電塊331的高度，該反 射膜333以具¥高反射率且可導電的材料，例如鋁，在該 等導電塊331與入射膜332上形成且厚度均一，用以反射 光。 更佳地，該光反射膜333可以由至少一層的金属，及 或合金構成’除了得到更高的反射效果，也可以藉著金屬 或合金本身的導電性，簡單地與第二基板35接觸而電連接 該黏著層34由一在晶圓貼合製程溫度範圍成液態的黏 著劑構成，位在該光反射膜333對應於該等導電塊331的 區域上，且尚度與該光反射膜333對應於光入射膜332的 區域齊平，而與該光反射膜333對應於光入射膜332的區 11 200935619 域共同構成一平面。 該第二基板35包括一以可以導熱的材料構成的基底 351，及一形成在該基底351上而可以導電，作為電極使用 的導電層352，該導電層352與該光反射膜333、黏著層％ 相連接，且該導電層352與該光反射膜333對應於光入射 臈332的區域，是以晶圓貼合方式連接，與該黏著層34相 連接的區域則是藉著黏著劑的黏結力達成，較佳地，該基 © 底3S1以同時可導電與導熱的材料構成更佳，在此，該導 電層352是以金/錫合金為材料構成。 备自該電極32與第二基板35配合施加電能時，電流 經過電流擴散層3 14水平分散，繼而流通過該第一、二披 覆層311、312與主動層313,而以光電效應產生光子，產 生的光部分直接朝向第二表面316行進，並因粗化後的第 二表面316而較有較大的機率穿出向外發射；部分朝向第 一表面315行進的光，部分在碰到導電塊331時即反射而 朝向第二表面316行進、向外射出，部分朝向光入射膜333 行進的光，因為光入射膜332的折射率小於磊晶膜單元31 ，所以直接入射進入該光入射膜333中行進，之後再被該 光反射膜33 3反射朝向第二表面316方向行進，並類似地 藉著粗化後的第一表面315而有較大的機率再次進入磊晶 膜單元31中，進而因粗化後的第二表面316而較有較大的 機率穿出向外發射，所以，總地來說，元件的光取出效率 會有所提昇。 參閱圖2、圖4,實施本發明一種具雙面粗化垂直導通 12 200935619 式發光二極體之製造方法的一第一較佳實施例時，先進行 步驟201在第一基板51上蟲晶、製作出該蟲晶模單元η 後’粗化該磊晶膜單元31的第一表面315。 參閱圖2、冑5,接著進行步驟2〇2，在該粗化後的第 一表面315上佈設該等導電塊331，並使該等導電塊33ι與 該蟲晶膜單元31相歐姆接觸，在此，是選用鈦你合金構成 該等導電塊3 1。 參閲圖2、目6,然:後進行㈣2〇3，自該粗化後的第 表面未形成有導電塊331 #區域上，向上形成該高度實 質均等且大於該導電塊331高度的光入射膜332，在此，是 選用氧化矽作為形成該光入射膜332的材料。 參閱圖2、圖7,接著進行步驟2〇4，在該等導電塊 331與光入射膜332上形成該高度實質均等且可反射光與導 電的光反射膜333,該等導電塊331、光入射膜332、光反 射膜333共同構成該反射鏡33。在此，是用鋁及金/錫合金 作為材料依序形成兩層層體而共同構成該光反射膜333。 此時，可以實施步驟205 ,準備該由導電層352、基底 351構成的第二基板35。 參閱圖2、圖8，實施步驟206 ’將在晶圓貼合溫度範 圍呈液態的黏著劑52在晶圓貼合溫度範圍（一般是18〇〇c 〜200 C)下塗佈在該光反射膜333上，在此是選用18〇。〇 〜200°C呈液態的熱固型黏著劑，較佳地’此等黏著劑可以 更選用具有導電性的導電型黏著劑。 參閱圖2、圖9，步驟207在晶圓貼合溫度下，將該第 13 200935619 二基板35以該導電層352朝向該光反射媒％地彼此相向 堆叠施壓’將該光反射帛333對應於形成有光入射膜332 的區域上的黏著劑52擠出，並在該第二基板35與反射鏡 33相連接後降溫至常溫，使得該第二基板^在對應於形成 有光入射膜332的區域是以晶圓貼合方式和反射鏡33彼此 接合成一體，且對應於形成有導電塊331的區域藉該黏著 劑52和反射鏡33彼此相連接。200935619 IX. Description of the Invention: [Technical Field] The present invention relates to a method and a product for producing a solid-state light-emitting element, and more particularly to a method for manufacturing a vertical-conducting light-emitting diode and a cover thereof. [Prior Art] Referring to FIG. 1, a vertical-conducting light-emitting diode 丨 includes an epitaxial film unit u that generates light by a photoelectric effect when supplying © electrical energy, and a bottom portion 116 disposed on the bottom surface 116 of the epitaxial unit 11 for reflection. A light mirror 12, an electrode 13 disposed on the top surface (1) of the crystal film unit U, and a substrate 14 attached to the mirror 12. The doped crystal film unit is mainly formed by epitaxial crystallizing of a gallium nitride series semiconductor material in a lattice matching epitaxial substrate, and has a P-type slope layer (p-type) which is doped respectively into p and n types. Cladding ayer) U1, n-type cladding layer 112, and a & layer formed on the active layer 113 between the p-type n-cladding layers 111, 112 The ρ, n-type cladding layers 111, 112 form a carrier energy barrier with respect to the active layer 113, and provide electrical energy to the active layer 113 to generate electron-hole recombination, release energy, and convert into light, in order to improve light output efficiency. The top surface 115 of the insect crystal film unit 11 is further roughened to form a thick chain surface to avoid the occurrence of total reflection, and the light emitted from the epitaxial film unit 11 is directly passed through the top surface 115 to enter the outside. The mirror 12 is formed on the bottom surface 116 of the epitaxial film unit 11 with a material having a high reflectivity, so that the light generated by the epitaxial film unit 11 and traveling toward the bottom surface 116 is reflected and then enters the outside through the top surface Η5. In order to improve the overall efficiency of the 200935619 component (five). In general, the mirror 12 is made of a metal having a high reflectance coefficient and forms an ohmic contact with the insect crystal element 11 to simultaneously have a conductive function. The substrate 14 is made of a material that can conduct heat and electricity, usually an alloy or a base metal, and is connected to the mirror 12 to support the structure of the epitaxial film unit 11 and the mirror 12 and is disposed in the same The electrode 13 on the top surface of the crystal film unit 11 is used as the other electrode to provide the electric crystal raft 'to the epitaxial film unit 11 while the waste heat generated when the epitaxial film unit 11 is actuated is guided away from the ray by the mirror 12 The crystal film unit n causes the operating junction temperature when the epitaxial film unit n is actuated to not be too high, thereby affecting the carrier recombination efficiency. When electrical energy is applied from the electrode 13 and the substrate 14, a current flows through the p, n-type cladding layers 111, 112 and the active layer 113, and the light portion generated by the photoelectric effect photon' directly travels toward the top surface 115, and Because of the roughened top surface 115, a larger machine is flattened out and emitted outward, and part of the light traveling toward the bottom surface 116 is reflected by the mirror 12 and then travels toward the top surface ι15' and similarly by thick The top surface 115 has a greater chance of passing out and emitting outward. The above-mentioned vertical-conducting light-emitting diode 1 is obtained by epitaxially depositing a gallium nitride-based semiconductor material on a suitable epitaxial substrate onto which the p-type n-cladding layers 111 and 112 and the active layer 113' are formed. After the epitaxial film unit is fabricated, the mirror 12 is plated on the uppermost layer of the structure, and then the substrate 14 is bonded to the mirror 12 in a wafer bonding manner, and then the epitaxial substrate is removed. The bottom surface of the epitaxial germanium unit 11 (the top surface of the n-type cladding layer in) is exposed to 200935619, and the roughening process is performed to form the electrode 13, that is, the vertical-conducting light-emitting diode 1 is produced. In the case of such a vertical-conducting light-emitting diode 1, a large problem is a problem of structural quality change caused in the manufacturing process. More specifically, since the epitaxial film unit 11, the mirror 12 and the substrate 14 are in contact with each other The wafer bonding technique (that is, 'alloy bonding') is applied, so there is still a problem that the connection is not tight enough and the process yield is low. In addition, the reflection mirror 12 must be subjected to a high temperature (2). 〇〇 ec ~ 400 ° C) wafer bonding process to form an ohmic contact with the epitaxial film unit 11 (simultaneous wafer bonding), and such high temperature processing process will cause the qualitative change of the mirror 12, thereby affecting the reflection effect Reduce the light extraction efficiency of the component. On the other hand, in order to improve the yield of the process, the epitaxial film bonded to the permanent substrate usually needs to have a certain degree of surface flatness, so that such components can only be fabricated into a single-sided roughened component structure (in this case). For example, only a vertical-conducting light-emitting diode of n-side up in which the n-type cladding layer is located away from the substrate I4 can be produced, and thus the external quantum efficiency of the element is improved. Based on prior art considerations, the current fabrication process of the vertical conduction light-emitting diode i must be redesigned to overcome the problems caused by the manufacturing process, and also provide a vertical conduction light-emitting diode of another aspect. For market selection. SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method of manufacturing a light-emitting diode. Further, another object of the present invention is to provide a double-sided thick 200935619 direct-conducting light-emitting diode. Thus, the method of manufacturing a double-sided roughened vertical-conducting light-emitting diode of the present invention comprises the following eight steps. (a) roughening a first surface of an epitaxial film unit connected to a first substrate opposite to the first substrate, the epitaxial film unit being epitaxially formed with a gallium nitride series semiconductor material and providing electrical energy Light is produced by the photoelectric effect. (b) forming a plurality of conductive blocks having substantially the same height and substantially ohmic contact with the house film unit on the roughened first surface. (e) forming, from the region of the first surface after the roughening that the conductive block is not formed, a light incident film 〇(d) having a height substantially equal and greater than the height of the conductive block, from the conductive blocks and the light incident film upward A light reflecting film which is substantially uniform in height and which can reflect light and conduct electricity is formed. (e) preparing a second substrate having a conductive layer. (f) Applying an adhesive which is liquid in the wafer bonding temperature range to the light reflecting film at the bonding temperature of the wafer > (g) at a wafer bonding temperature, the second substrate is connected to the light reflecting film in contact with the conductive layer, and then cooled to a normal temperature, so that the conductive layer of the second substrate corresponds to the light incident film formed The regions are bonded to the light reflecting film in a wafer bonding manner, and the regions corresponding to the conductive blocks are connected to each other by the adhesive and the light reflecting film. (h) removing the first substrate. Furthermore, a double-sided roughened vertical-conducting light-emitting diode of the present invention comprises an epitaxial film unit, an electrode, a mirror, an adhesive layer, and a second substrate. The crystallized film unit generates light by a photoelectric effect when supplied with electric energy and has a first surface and a second surface which are opposite and roughened. The electrode is placed on the second surface and is in ohmic contact with the epitaxial film unit. The mirror is connected to the first surface, has a plurality of substantially equal height conductive blocks, a light incident film having a thickness much larger than the height of the conductive blocks, and a light having substantially equal thickness on the light human film a reflective film, the plurality of conductive blocks are spaced apart on the first surface and in ohmic contact with the insect film unit. The light incident film is formed on the first surface without a material having a refractive index smaller than the material of the stray film unit. On the region having the conductive blocks, the light reflecting film is formed of a material having high reflectivity and being electrically conductive. The adhesive layer is disposed on a region of the light reflecting film corresponding to the conductive blocks and is flush with a region of the light reflecting film corresponding to the light incident film. The second substrate is electrically conductive and cooperates with the electrode to supply electric power to the epitaxial film, and is bonded to the light reflecting film by wafer bonding, and is bonded to the adhesive layer by bonding. The utility model has the advantages that the second substrate and the epitaxial film unit are more firmly connected by the adhesive bonding method and the wafer bonding technology, and the whole process is controlled to be not more than the wafer bonding process temperature range (2〇( Rc below), can overcome the high temperature process of the mirror to be in ohmic contact with the epitaxial film unit, and the temperature process will cause the mirror to undergo qualitative changes, so that the fabricated components have a more southerly luminous efficiency. The foregoing and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. It should be noted that in the following description, similar elements are denoted by the same reference numerals. β Ο Referring to Fig. 2, "3, the manufacture of a double-sided roughened vertical conduction light-emitting diode of the present invention is manufactured. The preferred embodiment of the method is to produce a double-sided roughened vertical-conducting light-emitting diode 3 as shown in FIG. 3, because such a double-sided roughening vertical guide The ρ_-type cladding layer of the light-emitting diode 3 is above the substrate, so it is commonly referred to as p_sideupLED in the industry. The low-temperature manufacturing method of the present invention firstly knows that the double-sided roughening vertical-conducting light-emitting diode is produced. After the structure of the polar body 3, it can be more clearly understood that referring to FIG. 3, the double-sided roughened vertical-conducting light-emitting diode 3 manufactured by the first preferred embodiment of the manufacturing method of the present invention comprises one a crystal film unit 31 for generating light by photoelectric effect, an electrode 32 disposed on the insect film unit 31, a mirror 33 connected to the epitaxial film unit 31, an adhesive layer 34' and a connection a second substrate 35 on the mirror 33. The crystal film unit 31 is formed of a nitride-based semiconductor material in a lattice-matched first 1 substrate 51 (stupid crystal substrate) (not shown) a first and a second cladding layer 311, 312 (p-type cladding layer), and a layer formed on the first and second cladding layers 311 '312 The active layer 313 between, and the layer is transparent and can be guided through 10 200935619 The material forms a current diffusion layer 314 on the first cladding layer 311. The first and second cladding layers 311, 312 form a carrier energy barrier with respect to the active layer 313 and provide electrical energy to the active layer 313 to generate electrons. The hole recombines, releases energy, and then converts into light. The current diffusion layer 314 allows the current to be uniformly diffused laterally to enhance the internal quantum effect. The first surface of the epitaxial film unit U, a surface 3 15 and 316 (the epitaxial film unit) The bottom surface and the top surface are roughened to form a thick chain surface to avoid the occurrence of total reflection and enhance the probability of light passing through. ❹ ❹ The mirror 33 has a plurality of conductive blocks 331, a light incident film 332, and a light reflecting film. 333, the plurality of conductive blocks 331 are spaced apart on the first surface 315 and form an ohmic contact with the crystal generating film unit 11, and the height of each of the conductive blocks 331 is substantially equal, and the light incident film 332 has a refractive index smaller than that. The material of the gallium nitride-based semiconductor material of the epitaxial film unit 11 (for example, yttrium oxide) is formed to have a thickness larger than the height of the conductive blocks 331, and the reflective film 333 is made of a material having high reflectivity and being electrically conductive, such as aluminum. ,in On the other conductive block 331 and incident on film 332 having a uniform thickness is formed, for reflecting light. More preferably, the light reflecting film 333 may be composed of at least one layer of metal, and or alloy. 'In addition to obtaining a higher reflection effect, it may simply be in contact with the second substrate 35 by the conductivity of the metal or the alloy itself. Electrically connecting the adhesive layer 34 is formed by an adhesive which is in a liquid state in the wafer bonding process temperature range, and is located on a region of the light reflecting film 333 corresponding to the conductive blocks 331 and is still adjacent to the light reflecting film 333. The area corresponding to the light incident film 332 is flush, and the area of the light reflecting film 333 corresponding to the area 11 200935619 of the light incident film 332 together constitutes a plane. The second substrate 35 includes a substrate 351 made of a material that can conduct heat, and a conductive layer 352 formed on the substrate 351 to be electrically conductive and used as an electrode. The conductive layer 352 and the light reflecting film 333 and the adhesive layer % is connected, and the conductive layer 352 and the light reflecting film 333 correspond to the region where the light is incident on the crucible 332, and are connected by wafer bonding, and the region connected to the adhesive layer 34 is bonded by an adhesive. Preferably, the base 3S1 is preferably made of a material which is electrically and thermally conductive at the same time. Here, the conductive layer 352 is made of a gold/tin alloy. When the electrode 32 is combined with the second substrate 35 to apply electric energy, the current is horizontally dispersed through the current diffusion layer 314, and then flows through the first and second cladding layers 311, 312 and the active layer 313 to generate photons by photoelectric effect. The generated light portion travels directly toward the second surface 316 and has a greater probability of exiting outwardly due to the roughened second surface 316; part of the light traveling toward the first surface 315 is partially encountered When the conductive block 331 is reflected, it travels toward the second surface 316 and is emitted outward, and the light traveling toward the light incident film 333 partially enters the light incident because the refractive index of the light incident film 332 is smaller than that of the epitaxial film unit 31. The film 333 travels and is then reflected by the light reflecting film 33 3 toward the second surface 316, and similarly passes through the roughened first surface 315 to have a greater probability of entering the epitaxial film unit 31 again. Moreover, since the roughened second surface 316 has a greater probability of passing out and emitting outward, in general, the light extraction efficiency of the component is improved. Referring to FIG. 2 and FIG. 4, when a first preferred embodiment of the method for manufacturing a double-sided rough vertical conduction 12 200935619 type light-emitting diode is implemented, the step 201 is performed on the first substrate 51. After the insect crystal unit η is fabricated, the first surface 315 of the epitaxial film unit 31 is roughened. Referring to FIG. 2 and FIG. 5, following step 2〇2, the conductive blocks 331 are disposed on the roughened first surface 315, and the conductive blocks 331 are in ohmic contact with the insect crystal film unit 31. Here, the titanium alloy is used to form the conductive blocks 31. Referring to FIG. 2 and FIG. 6 , the following is performed: (4) 2〇3, from the surface of the roughened first surface where the conductive block 331 is not formed, the light is incident upwardly and substantially higher than the height of the conductive block 331. The film 332, here, is selected from cerium oxide as a material for forming the light incident film 332. Referring to FIG. 2 and FIG. 7, step 2〇4 is further performed, and the light-reflecting film 333 is formed on the conductive block 331 and the light incident film 332, and the light-reflecting film 333 is substantially uniform and can reflect light and conduct electricity. The incident film 332 and the light reflecting film 333 together constitute the mirror 33. Here, the light reflection film 333 is formed by sequentially forming two layers of a layer of aluminum and gold/tin alloy as a material. At this time, step 205 may be performed to prepare the second substrate 35 composed of the conductive layer 352 and the substrate 351. Referring to FIG. 2 and FIG. 8, step 206 is performed to apply the adhesive 52 in a liquid temperature range of the wafer bonding temperature to the wafer bonding temperature range (generally 18 〇〇 c to 200 C). On the film 333, 18 turns are used here.热 ～200°C is a liquid thermosetting adhesive. Preferably, these adhesives may be made of a conductive adhesive having conductivity. Referring to FIG. 2 and FIG. 9 , in step 207, at the wafer bonding temperature, the 13th 200935619 two substrates 35 are pressed toward each other with the conductive layer 352 facing the light reflecting medium. The adhesive 52 on the region where the light incident film 332 is formed is extruded, and after the second substrate 35 is connected to the mirror 33, the temperature is lowered to a normal temperature, so that the second substrate is corresponding to the light incident film 332. The regions are bonded to each other in a wafer bonding manner and the mirror 33, and the regions in which the conductive blocks 331 are formed are connected to each other by the adhesive 52 and the mirror 33.
參閱圖2,然後進行步驟2〇8，將該第一基板51移除 ’使磊晶膜單元31的第二表面316裸露。 參閱圖2、圖10,接著實施步驟2〇9，粗化該第二表面 316 ° 參閱圖2，最後實施步驟21〇，將該電極32設置在第 一表面316上，製作得到如圖3所示的具雙面粗化垂直導 通式發光二極體3。 由上述具雙面粗化垂直導通式發光二極體之製造方法 的說明可知，由於本發鈉同時藉著晶圓貼合與黏著劑52連 接第二基板35與反射鏡33，所以可以使得作為電極使用的 第一基板35與反射鏡33更穩固的連接，而可以避免習知 僅靠晶圓貼合技術連接時’發生連接不夠緊密、徹底，而 導致作為電極使用的基板出現電連接失效、熱傳導不如預 期的問題。 此外，整個製程是設計先讓導電塊331成型、並經過 鬲温形成歐姆接觸，之後則以低溫（在晶圓貼合實施的溫 度範圍）形成反射鏡33的光入射膜332、光反射膜333等 14 200935619 結構，以及讓第二基板35與形 連接，並藉該等導電塊331、反射^鏡33彼此緊密的 料導電性形成電連接，所以不會像習知的的材 ，極體：的製程-般，為了讓形成的反射鏡12=: 元Η形成歐姆接觸而必須實施—道言、w 、 高溫處理過程會導致反射鏡。二：’而讓這樣的 ❹Referring to Figure 2, then step 2 is performed to remove the first substrate 51 to expose the second surface 316 of the epitaxial film unit 31. Referring to FIG. 2 and FIG. 10, step 2〇9 is further performed to roughen the second surface 316°. Referring to FIG. 2, finally step 21 is performed, and the electrode 32 is disposed on the first surface 316 to be fabricated as shown in FIG. The double-sided roughened vertical-conducting light-emitting diode 3 is shown. According to the description of the method for manufacturing the double-sided roughened vertical-conducting light-emitting diode described above, since the sodium is bonded to the second substrate 35 and the mirror 33 by the wafer bonding and the adhesive 52, it can be used as The first substrate 35 used by the electrode is more firmly connected to the mirror 33, and it can be avoided that when the connection is only by the wafer bonding technology, the connection is not sufficiently tight and thorough, and the electrical connection failure occurs in the substrate used as the electrode. Heat conduction is not as good as expected. In addition, the entire process is a light incident film 332 and a light reflecting film 333 which are formed by first forming the conductive block 331 and forming an ohmic contact through the temperature, and then forming the mirror 33 at a low temperature (temperature range in which the wafer is bonded). Etc. 14 200935619 structure, and the second substrate 35 is connected to the shape, and the electrical connection between the conductive block 331 and the reflective mirror 33 is made electrically connected to each other, so that it is not like a conventional material, the polar body: The process is generally performed in order for the formed mirror 12 =: Η to form an ohmic contact - the doctrine, w, and high temperature processing will cause the mirror. Two: 'And let this be
率的元件。 題製作出具有更高發光效 本發明一種具雙面粗化垂直導捕 且等逋式發光二極體之製造 方法的一第二較佳實施例，是贺作屮 疋表作出類似如圖3所示的具 雙面粗化垂直導通式發光二極體，作. 1-疋具P-型披覆層相對 遠離基板而在上方’也就是業界慣稱為p_side up LED的元 件，由於整體結構與n-side up LED相類似，所以在此不再 重複說明由本第二較佳實施例所製作出的具雙面粗化垂直 導通式發光二極體的結構。 參閱圖11，在製造方法上，必須增加實施在步驟2〇1 之刚的更換基板的過程’以下僅配合圖11說明此等第二較 佳實施例更換基板的過程。 參閱圖11、圖12，首先實施步驟41，先採用氮化鎵系 列材料磊晶用的基板54 (藍寶石基板）磊晶形成出磊晶膜 單元31’基於一般磊晶製作過程是依序形成η型披覆層 312、主動層313，與ρ型彼覆層311，所以此時磊晶膜單元 31的第二表面316(電流擴散層314頂面）是遠離磊晶基 板而朝上裸露的。 15 200935619 然後進行步驟42,粗化該第二表面3ΐ6〇 ^閱圖1圖13，接著進行步驟43，以壤53將第一 基板51與s亥第二表面316相固定連接。 參閱圖U、圖14，再進行步驟44，移除該羼晶基板54 ，讓磊晶膜單元3丨的第一表面315裸露。 ❹ 〇 卩可依序依照第一較佳實施例所說明的步驟， 粗化第-表面315、形成反射鏡33、連接上第二基板… 再將第-基板51移除，即可製作得到up的具雙面粗 化垂直導通式發光二極體。 綜上所述，本發明具雙面粗化垂直導通式發光二極體 之製造方法及其產品主要是設計先讓導電i鬼331成型、並 經過高溫形成歐姆接觸，之後則在晶圓貼合實施的低溫下 ’形成反射鏡33 ’並藉反射鏡33的導電塊331、反射膜 333、導電層351的材料導電性直接形成電連接，所以可以 克服習知的垂直導通式發光二極冑1的製程，為了讓反射 鏡12形成歐姆接觸而必須進行高溫處理，而高溫又會導致 反射鏡12質變’進而影響反射的效果、降低元件的光取出 效率的問題’製作出具有更高發光效率的元件；此外，本 發明也同時藉著晶圓貼合與黏著劑連接第二基板35與反射 鏡33，所以可以使得作為電極使用的第二基板35與反射鏡 33更穩固的連接，而可以避免僅靠晶圓貼合技術連接時， 會發生的連接度不夠’而導致電連接失效、熱傳導不如 期的問題，確實達到本發明的創作目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 16 200935619 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖視示意圖，說明習知垂直導通式發光二極 體； 圖2疋一流程圖，說明本發明具雙面粗化垂直導通式 〇 發光一極體之製造方法的一第一較佳實施例； 圖3是一剖視示意圖’說明以圖2的製造方法製作的 具雙面粗化垂直導通式發光二極體； 圖4是一剖視示意圖，輔助說明實施圖2的製造方法 時’粗化磊晶膜單元的第一表面； 圖5是一剖視示意圖，輔助說明實施圖2的製造方法 時，在粗化後的第一表面上佈設多數導電塊； 圖6是一剖視示意圖，辅助說明實施圖2的製造方法 > 時，自粗化後的第一表面形成光入射膜； 圖7是一剖視示意圖，辅助說明實施圖2的製造方法 時，在導電塊與光入射膜上形成光反射膜； 圖8是一剖視示意圖，輔助說明實施圖2的製造方法 時’在晶圓貼合溫度範圍下，在光反射膜上塗佈呈液態的 黏著劑； 圖9是一剖視示意圖，辅助說明實施圖2的製造方法 時’在晶圓貼合溫度下，將第二基板與反射鏡相連接； 圖10是一剖視示意圖，輔助說明實施圖2的製造方法 17 200935619 時，粗化磊晶膜單元的第二表面； 圖11 *一流程圖，說明本發明具雙面粗化垂直導通式 發光二極體之製造方法的一第二較佳實 的過程； j甲更換基板 圖12是一剖視示意圖，辅助說明實施圖u製、& ’ 更換基板過程中，以蟲晶基板蟲晶形成㈣晶膜^.法的 Ο 圖13是—剖視示意圖，辅助說明實施^ u 古 更換基板過財，㈣將第—基 、方法的 面相固定連接；及 興磊曰曰膜早兀的第二表 更換二4過是:Γ:意圖’輔助說明實施…^ 裸露。移㈣晶基板讓蟲晶料元㈣—表面 ❹ 18 200935619Rate of components. The present invention provides a second preferred embodiment of the method for manufacturing a double-sided rough vertical trap and an isometric light-emitting diode of the present invention, which is similar to that shown in FIG. The double-sided roughened vertical-conducting light-emitting diode is shown as a 1-pin P-type cladding layer on the upper side relatively far away from the substrate, which is also known as the p_side up LED in the industry due to the overall structure. Similar to the n-side up LED, the structure of the double-sided roughened vertical conduction light-emitting diode produced by the second preferred embodiment will not be repeatedly described herein. Referring to Fig. 11, in the manufacturing method, the process of replacing the substrate at step 2〇1 must be added. The process of replacing the substrate by the second preferred embodiment will be described below only with reference to Fig. 11. Referring to FIG. 11 and FIG. 12, step 41 is firstly performed, and the epitaxial film unit 31' is epitaxially formed by using a substrate 54 (sapphire substrate) for epitaxial GaN series material epitaxy. The type of cladding layer 312, the active layer 313, and the p-type cladding layer 311, so that the second surface 316 of the epitaxial film unit 31 (top surface of the current diffusion layer 314) is exposed upwards away from the epitaxial substrate. 15 200935619 Then proceed to step 42 to roughen the second surface 3 ΐ 6 〇 1 to FIG. 13 and then proceed to step 43 to securely connect the first substrate 51 to the second surface 316 of the SG. Referring to FIG. U and FIG. 14, step 44 is further performed to remove the twinned substrate 54 to expose the first surface 315 of the epitaxial film unit 3A. ❹ 〇卩 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照A double-sided roughened vertical-conducting light-emitting diode. In summary, the method for manufacturing the double-sided roughening vertical-conducting light-emitting diode of the present invention and the product thereof are mainly designed to first form the conductive i-ghost 331 and form an ohmic contact after high temperature, and then after bonding on the wafer. The low-precision 'forming mirror 33' is directly electrically connected by the material conductivity of the conductive block 331, the reflective film 333, and the conductive layer 351 of the mirror 33, so that the conventional vertical-conducting light-emitting diode 1 can be overcome. In order to make the mirror 12 form an ohmic contact, high temperature processing must be performed, and the high temperature causes the mirror 12 to undergo a qualitative change, thereby affecting the effect of reflection and reducing the light extraction efficiency of the element, to produce a higher luminous efficiency. In addition, the present invention also connects the second substrate 35 and the mirror 33 by means of wafer bonding and adhesion, so that the second substrate 35 used as an electrode can be more firmly connected to the mirror 33, and can be avoided. When the wafer bonding technology is only connected by the wafer bonding technology, the degree of connection that occurs may be insufficient, resulting in failure of the electrical connection and failure of heat conduction, and indeed achieve the present invention. For the purpose. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention can be limited to the extent of the invention, that is, the simple equivalent change according to the scope of the invention and the description of the invention. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional vertical-conducting light-emitting diode; FIG. 2 is a flow chart showing the manufacture of a double-sided roughened vertical-conducting xenon-emitting one-pole body of the present invention. A first preferred embodiment of the method; FIG. 3 is a schematic cross-sectional view showing a double-sided roughened vertical-conducting light-emitting diode fabricated by the manufacturing method of FIG. 2; FIG. 4 is a schematic cross-sectional view, When the manufacturing method of FIG. 2 is implemented, 'the first surface of the epitaxial film unit is roughened; FIG. 5 is a schematic cross-sectional view, which assists in explaining that when the manufacturing method of FIG. 2 is implemented, a plurality of conductive blocks are disposed on the roughened first surface. Figure 6 is a schematic cross-sectional view, in order to explain the implementation of the manufacturing method of Figure 2, forming a light incident film from the roughened first surface; Figure 7 is a cross-sectional view showing the implementation of the manufacturing method of Figure 2 At the time, a light reflecting film is formed on the conductive block and the light incident film; FIG. 8 is a schematic cross-sectional view for assisting the description of the manufacturing method of FIG. 2 when the film is applied to the light reflecting film at the wafer bonding temperature range. Liquid adhesive; Figure 9 is BRIEF DESCRIPTION OF THE DRAWINGS FIG. 10 is a cross-sectional view showing the implementation of the manufacturing method of FIG. 2; FIG. 10 is a schematic cross-sectional view showing the implementation of the manufacturing method of FIG. 2 200935619 When the second surface of the epitaxial film unit is roughened; FIG. 11 is a flow chart illustrating a second preferred process of the method for fabricating the double-sided roughened vertical-conducting light-emitting diode of the present invention; FIG. 12 is a schematic cross-sectional view, which is a schematic cross-sectional view of the process of replacing the substrate, and forming a crystal film of the insect crystal substrate. Implementation ^ u ancient replacement of the board for the fortune, (d) the first base, the method of the surface is fixedly connected; and Xinglei 曰曰 film early 兀 second table replacement two 4 is: Γ: intention 'auxiliary instructions to implement ... ^ bare. Move the (four) crystal substrate to make the insect crystal element (4) - surface ❹ 18 200935619
【主要元件符號說明】 201 步驟 332 光入射膜 202 步驟 333 光反射膜 203 步驟 34 黏著層 204 步驟 35 第二基板 205 步驟 351 基底 206 步驟 352 導電層 207 步驟 41 步驟 208 步驟 42 步驟 209 步驟 43 步驟 210 步驟 44 步驟 3 具雙面粗化垂 51 第一基板 直導通式發光 52 黏著劑 二極體 53 蠟 31 蟲晶膜早兀 54 蟲晶基板 311 第一披覆層 312 第二披覆層 313 主動層 314 電流擴散層 315 第一表面 316 第二表面 32 電極 33 反射鏡 331 導電塊 19[Major component symbol description] 201 Step 332 Light incident film 202 Step 333 Light reflecting film 203 Step 34 Adhesive layer 204 Step 35 Second substrate 205 Step 351 Substrate 206 Step 352 Conductive layer 207 Step 41 Step 208 Step 42 Step 209 Step 43 Step 210 Step 44 Step 3 with double-sided roughening 51 First substrate direct-conducting light 52 Adhesive diode 53 Wax 31 Insect film early 54 Insect crystal substrate 311 First cladding layer 312 Second coating layer 313 Active layer 314 current spreading layer 315 first surface 316 second surface 32 electrode 33 mirror 331 conductive block 19