1276236 九、發明說明： ^ 【發明所屬之技術領域】 • 本發明係關於一種發光二極體及其製作方法，特別是一種具 '光取出面之發光二極體及其製作方法。 _ 【先前技術】 發光二極體（Light Emitting Diode，簡稱LED)是一種單晶 發光半導體，這種半導體在電流通過時便會發出光亮。其發光元 #件之結構包含P型半導體層、N型半導體層與活性層，藉由電子 、電洞在PN接面的活性層内結合來發光。發光二極體之發光效率 ‘ 可分為内在發光效率（Internal quantum efficiency)及外在發光效 率（External quantum efflciency)兩者。内在發光效率視發光二極 體之成長㈣與結晶度而定。_目前蟲晶法已相當成熟， 但光在發光二極體結構中卻因表面的反射及材料本身的吸收，以 致從發光二鋪發出的光能被外界接受者僅達百分之十以下。因 藝此提升舍光_極體之外在發光效率，實為一重要課題。 —目則為提升外在發光效率，大多先以蟲晶成長厚膜 ，然後以 切割或爛厚_方式增加側面出光面積，但針對薄型化的發光 極體’此種製作方式其良率較低。在美國6篇％號專利案中 =透明導電之基板，如碳化秒（Sic)、氮化録（㈣）等作為 厂曰的原年基板，並製作光取出面以提供原生基板上之發光元件 二產^之光施有較大的出光面積，並提供—種垂直電極之結構， 藉以提升發光效率。另外，在中華民國第565957號發明專利案中 1276236 揭不一種發光二極體元件之製造方法， 之氮化鎵混成厚膜，利用氮化鉉石曰1喊具有斜面 风子膜利用亂化蘇蟲晶的特性自然形成蟲晶斜面， =於亂化鎵混謂膜上成長發光元件結構卿成發光二極體 其製程。且應用氮化鎵之厚膜_性來製作各種且多 的發光二極體元件晶粒，由於晶粒出光的表面 積（作為光取出面）增大，而且多邊斜面減少内部全反射的機率， 2發先二極體轉較習知鎵發光二極體元件具有較佳發光效 率。但此前案其氮化鎵之斜面厚膜之高低差距過大而導致反應器 内之層流反應氣體卿成擾流，辟元件雜與造成邊緣超成長 =應金令於氮化鎵混成顧上^成長的發光元件結構之蟲 使量子井組成與品質受到影響1邊緣超成長效 應兮後躓裝程步驟不易進行。 綜合上述所言’製作垂直電極可有效擴大出光面積’但綱 2-極體須空取易造成韻。並且域升發光效率 需頭外提供光取出面，令發光二極體製備触 。 【發明内容】 Μ 有鑑於先前技術所存在之問題，本發明提供_種具光取出面 之發光二極體及其製作方法，藉以製作垂直電極與提供光取出面 以提昇發級率’幼用雷軸絲與“接合將具發光結構之 晶片由原生基板轉移至具光取出面之晶片上，結合由原生基板成 長之南品㈣光元件與具高光取岐率之晶片，不僅可避免元件 因切割而破壞’且可改善於具高光取出效率之晶片上直接成長 I276236 日守，所面臨量子井成分不均勻、 等難題。 邊緣超成長效應及後續製程不易1276236 IX. Description of the invention: ^ [Technical field to which the invention pertains] The present invention relates to a light-emitting diode and a method of fabricating the same, and more particularly to a light-emitting diode having a light extraction surface and a method of fabricating the same. _ [Prior Art] A Light Emitting Diode (LED) is a single-crystal light-emitting semiconductor that emits light when current passes through it. The structure of the illuminating element includes a P-type semiconductor layer, an N-type semiconductor layer and an active layer, and emits light by combining electrons and holes in the active layer of the PN junction. The luminous efficiency of a light-emitting diode can be classified into two types: internal quantum efficiency and external quantum efflicity. The intrinsic luminous efficiency depends on the growth of the light-emitting diode (4) and the degree of crystallinity. _ At present, the insect crystal method is quite mature, but in the structure of the light-emitting diode, due to the reflection of the surface and the absorption of the material itself, the light energy emitted from the light-emitting two-story is only less than 10% of the external recipients. It is an important issue because of the improvement of the luminous efficiency outside the polar body. - The purpose is to improve the external luminous efficiency, most of them first grow thick film with insect crystals, and then increase the side light-emitting area by cutting or rotten thick, but for thin-shaped light-emitting polar body' this production method has lower yield . In the US 6% patent case = transparent conductive substrate, such as carbonized seconds (Sic), nitride recording ((4)), etc. as the original substrate of the factory, and made a light extraction surface to provide the light-emitting elements on the original substrate The light produced by the second product has a large light-emitting area and provides a structure of a vertical electrode to improve the luminous efficiency. In addition, in the invention patent case No. 565957 of the Republic of China, 1276236 discloses a method for manufacturing a light-emitting diode element, a gallium nitride mixed thick film, which utilizes a strontium nitride scorpion The characteristics of the insect crystal naturally form the parasitic surface of the insect crystal, and the process of growing the light-emitting element structure on the gallium-mixed film is formed into a light-emitting diode. Moreover, the use of a thick film of gallium nitride to produce various and many light-emitting diode element crystal grains, the surface area of the light emitted by the crystal (as a light extraction surface) increases, and the polygonal slope reduces the probability of internal total reflection, 2 The prior-diode conversion has a better luminous efficiency than the conventional gallium-emitting diode element. However, the difference between the height and the thickness of the GaN slanted thick film in the previous case caused the laminar reaction gas in the reactor to become a spoiler, and the component was mixed and caused to grow at the edge. The growth of the light-emitting element structure of the insect causes the quantum well composition and quality to be affected. 1 The edge ultra-growth effect is not easy to perform. In summary, the production of vertical electrodes can effectively expand the light-emitting area, but the 2-pole body must be empty to cause rhyme. And the field illuminating efficiency needs to provide a light extraction surface outside the head, so that the light emitting diode is prepared to touch. SUMMARY OF THE INVENTION In view of the problems in the prior art, the present invention provides a light-emitting diode having a light extraction surface and a manufacturing method thereof, thereby fabricating a vertical electrode and providing a light extraction surface to enhance the hair growth rate. The lightning-axis wire and the "bonding of the wafer with the light-emitting structure from the original substrate to the wafer with the light-removing surface, combined with the south (four) optical element grown by the original substrate and the wafer with high light-receiving rate, can not only avoid the component Cutting and destroying 'can improve the direct growth of I276236 on the wafer with high light extraction efficiency, facing the uneven quantum well composition, etc. Edge ultra-growth effect and subsequent process is not easy
桎達上述目的，本㈣露之具絲出面之發光- 赠之製作方法，包括有形成第—模板卿—基板上以先: 板具有第一晶片層，.其中第—曰 弟极 面，第桩編垃_ 層具有第一接觸面與光取出 面弟一接觸面接觸第-基板。接著移除第一 Γί觸面。另外糊二模板於第二基板上，此第二難具= =片層’其中弟二晶片層具有第二接觸面與發 結構發出之光線通過光取出面，且第二 冓 後移除第二基板，以暴露㈣弟—基板。然 直Μ '路㈣—接_。最後接合第-接觸面與 弟:接觸面即可。其中移除第—基板與移除第二基板是利用雷射 剥離沃，而接合第二接觸面與第—接觸面是利用晶片接合法。朵 取出面為第一晶片層之原生斜面，不需經切割或钕刻而塑形，可 避免晶體因塑形而損傷，不但可提昇發光效率，亦可免除切割時 預留之區域。 、 本發明製作之發光二極體其結構上包括有導電層、位於導電 =上之接合層、位於接合層上之具光取出面之第―晶片層、、位於 第-晶片層上之晶片接合層、位於該晶片接合層上之具發光結構 =第二晶片層、位於第二晶片層上之透明導電層，以及位於透明 導電層上之電極。其中發光結構發出之光線通過光取出面。 再者，利用本發明亦可製作使電極位於第一晶片層上之發光 二極體，其結構上包括有導電層、位於導電層上之接合層、位於 8 J276236 接合層上之具發光結構之第二晶片層、位於第二^層上之 接合層、位於晶片接合層上 曰曰曰 於第一日0 4加〃絲出面之弟-晶片層，以及位 弟4層上之雜。且發絲構發出之讀通過光取出面。 ^下在實施謝詳細敘述本翻之詳㈣細及優點，其 二谷足以使任何«相關者了解本發明之技術内容並據以實 ^且根據本_書所揭露之内容、申請專利翻及圖式，任何 u相關技藝者可㈣地_本發_社目的及優點。 【實施方式】 ” 為使對本發明的目的、構造、特徵、及其功能有進一步的瞭 解’炫配合實施例詳細如下。以上之_本發日肋容之說明 及以下之實施方式之__料範與轉本發明之顧，並且 提供本發明之專利申請範圍更進一步之解釋。 、、.請參閱「第1圖」為本發明之第一實施例之結構示意圖。在 ¥電層13上有接合層12,而接合層12上有第―晶片層n，第一 晶片層η上有晶片接合層25,晶片接合層25上有第二晶片声 21 ’而第二晶片層21上有透明導電層3G，透明導電層％上有電 極3!。其中第-晶片層η為島狀厚膜結構，此島狀厚膜結構之 側面積可作為光取出面lla，藉以提昇發光效率。此光取出面lla 為自然生成之斜面，可改變光行進路線，以提高出射光線散射、 反射與折射的機率，克服出射光線全反射之問題，用以提升光取 出效率。第二；層21具有發光元件之結構，其中發光元件發出 之光線通過光取出面lla ’且第二晶片層21經由晶片接合法與第 1276236 日日s 1接合。第二晶片層21之發光元件結構由N ^列m-v族化合物層（例如N德）21b、活性層A與p型， 化鎵系列m~V族化合物膚（例如P-GaN) 21d組成。 乳 請同時參閱「第2A圖」至「第2F圖 例之製作方法示意圖。如「第2AR所_ A 之弟一貫施 減一 L 』如rf2A圖」所不，先形成第—模板14 基板10上，第一模板14包括有第一晶片層1 i、接合声” 面二一晶片層11接觸第-基板1〇且具有光取出 (為弟-曰曰片層Μ側面積)。關於形成第一模板 Ζ包財先形成第—晶片層11於第—基板Η)上。第-晶片層^ :、、、二型1化鎵系列πι-ν族化合物之混成厚膜（例如队⑽），經 择物氣相趾以Hydride寧r Phase Epitaxy)形成於作: 弟一献ίο之藍寳石（sapphire)基材上。形成第—晶片層n : 厚度為2G微米以上，且内徑為15()微米以上。作為第—晶片層 11之N-GaN結晶層可蟲晶為區域性的島狀厚膜，以避免成長薄膜 狀晶片層時造成料而降做率’並且具高導熱係數之氮化録島 狀厚膜可提供較佳之散熱能力，使航二極體在高功率操作時且 有更好的穩定性。接著職接合層12料—⑸層^上，此接 合層I2為金屬共晶材料’且對光具有反射特性。最後形成導電層 13於接合層！2上，此導電層μ可為具有良好導㈣性之材質， 例如石夕、銅（〇0、銅鎢合金（CuW)、石夕錯合金〇、 碳化石夕（sic)、氮化鎵（GaN)和氧化辞（Zn〇)等。 接著如「第2B圖」所示（此圖為「第2a圖」上下翻轉後）， 1276236 私除弟-基板1G，以暴露㈣—晶片層u 3是_射剝離法一^ 層η分開，此雷射剝離法可減少第_ 高良率。第一接觸面nb的形狀可為四邊形曰、；構$傷以提 賴蟲晶成長第u層u時触 '，、、械圓形，端 62度。第-翻面ilb _清洗與於43度至 面處理後可靜待⑼接合之步驟。s 留之雜質等表 私不y主工“ 乂诹日日片接合（wafer bonding)是 二W ^平"""之日日片層緊密接觸後’通過界面間形成共價 展=者融為一體。晶片層接合先利用化學機械拋光來降片 層的表面粗糙度，並絲“層表面附著的雜物，接著將欲 ==準’施加外力使表面開始鍵結，最後經過熱處理使： 、、、口界面間形成共價鍵。 一 方面如第2C圖」所不，形成第二模板％於第二基 板20上，其中第二模板24包括有第二晶片層21、_層u與 載體23。其中第二晶片層21具有發光元件之結構且接觸第二基 板2〇。關於形成第二模板24之步驟包括有先形成第二晶片層21 於第二基板20上，第二晶片層21是由N型氮化鎵系列瓜，族 化合物層（例如N-GaN)21b、活性層21c與p型氮化嫁系列❹ 族化合物層（例如P-GaN) 21d組成，以提供發光元件之結構。 第二晶片層2!是以蠢晶方式生長在作為第二基板2〇之藍寶石基 材上’其中活性層21C為氮化紹鎵銦（A1GaInN)化合物層，藉由 1276236 電子電洞在PN接面的活性層…内結合來發光。活性層2 雙異質接聽構、單量子井結誠乡量子賴構。 声 22貼附載體23於第二晶片層21上，載體23用以支撐第= 層21以方便進仃後續之雷㈣離與晶片接合之步驟。 後）2D圖」所示（此圖為「第2c圖」上下翻轉 也。此步驟是细雷射剝_第二基板％與第二晶片—層接^ 開，此雷射剝離法可減少第二晶片層結構之損傷以提高良率。第 過清洗與去㈣棚之雜料表面處理後 J砰得日日片接合之步驟。 下步如「第2E圖」所示，接合第一接觸面n 面ha (請同時參閱「镇_同Λ「斤 ”乐一接觸 曰曰 異片接合法使第_以 」丹弟2D圖」）。此步驟是利用 曰曰 杲反14與第二模板24接合在一起，同時形成 曰口層25於兩者間，晶片接合層25為晶片接合法之介質。 二曰妾^層25為透明導電材料，例如氧化銦錫（ITO)化合 曰>!接人1接°層25之厚度為2毫微米町。彻雷射剝離法與 曰曰片接合與將«絲構之第二晶片層21 ：：ί：：Γ 片^成完^：!元件雖，並可與具高絲纽率之第-晶 接下來如「裳9Ρ闽 & _ 如厂第 弟圖」所不，移除黏膠層22與載體23。最後 圖」所不，在第二晶片層21上形成透明導電層30 12 1276236 (transparent conductive layer ’簡稱 TCL) ’ 再於透明導電層 ％ 上 ‘形成電極31。利用第一晶片層11與第二晶片層21上下兩側之電 .極31與導電層13形成垂直電極之結構。於第一實施例中，N型 ' 氮化鎵系列皿_¥族化合物層（例如N-GaN)21b與作為第一晶片 --層11 2N_GaN結晶層面對面接合，且電極31經透明導電層3〇 ' 與P型氮化鎵系列族化合物層（例如P-GaN) 21d接合而成 為P型電極’因此構成p侧向上之發光二極體。 • 糾，利用本發明亦可製作p側向下之發光二極體。請同時 參閱「第3A圖」至「第3G圖」為本發明之第二實施例之製作方 •法示意圖。如「第3A圖」所示，先形成第一模板14〇於第一基 板100上’第模板140包括有第一晶片層、黏膠層12〇與 載體130。具中第一晶片層ii〇接觸第一基板⑽且具有光取出 面U〇a(為第-晶片層110之側面積卜關於形成第一模板⑽ 之步驟包括有先形成第一晶片層11〇於第一基板謂上。接著以 φ黏闕m貼附載體130於第一晶片層11〇上，載體13〇用以支 撐第-晶片層110以方便進行後續之雷射剝離與晶片接合之步 夕，著如「第3B圖」所示（此圖為「第3A圖」上下翻轉後）， 移除第-基板議，以暴露出第—晶片層⑽之第-接觸面議。 ^步驟是利用雷射剝離法將第一基板1〇與第—晶片層u分開。 第—接觸面腿經過清洗與去除雷射剥離殘留之雜質等表面處 理後可靜待晶片接合之步驟。 13 1276236 另一方面，如「第3C圖」所示，形成第二模板24〇於第二基 板·上，其中第二模板包括有第二晶片層2i〇、接合層挪 與導電層230。其中第二晶片層21Ό具有發光元件之結構且接觸 第二基板200。關於形成第二模板之步驟包括有先形成第二 晶片層2Κ)於第二基板勘上。第二晶片層21〇是由_氮化嫁 ，歹m-v族化合物層（例如N_GaN) 21〇b、活性層2i〇c與ρ型 氮化鎵系列m-v族化合物層（例如p_GaN) 21〇d組成，以提供 發光元件之結構。接著形成接合層220於第二晶片層21〇上。最 後形成導電層230於接合層220上。 接下來，如「第3D圖」所示（此圖為「第3C圖」上下翻轉 後）’移除第二基板200，以暴露出第二晶片層21〇之第二接觸面 210a。此步驟是利用雷射剝离隹法將f二基板2〇〇與第二晶片層21〇 分開。第二接觸面施經過清洗與去除雷侧離殘留之雜質等表 面處理後可靜待晶片接合之步驟。 下一步如「第3E圖」所示，接合第一接觸面11〇b與第二接 觸面施（請同時參閱「第3B圖」與「第3D圖」）。此步驟是利 用晶片接合法使第一模板140與第二模板24〇接合在一起，同時 形成晶片接合層250於兩者間。 接下來如「第3F圖」所示，移除黏膠層12〇與載體13〇。最 後如「第3G圖」所示，在第一晶片層11〇上形成電極31〇。利用 第一晶片層110與第二晶片層210上下兩側之電極31〇與導電層 230形成垂直電極之結構。於第二實施例中，N型氮化鎵系列 14 1276236 鉍化合物層（例如N_GaN)21Gb與作為第U層11G之In order to achieve the above purposes, this (four) dew has its own illuminating light - the production method of the gift, including the formation of the first template - on the substrate first: the plate has the first wafer layer, which is the first - 曰 极 polar face, the first The pile-laying layer has a first contact surface and a light-receiving surface-contact surface contacting the first substrate. Then remove the first Γί contact. In addition, the paste template is on the second substrate, and the second die == slice layer, wherein the second wafer layer has the second contact surface and the light emitted by the hair structure passes through the light extraction surface, and the second layer is removed after the second layer Substrate to expose (four) brother-substrate. However, the direct road 'four (four) - connected _. Finally, join the first-contact surface and the younger brother: the contact surface can be. The removal of the first substrate and the removal of the second substrate are performed by laser stripping, and the bonding of the second contact surface and the first contact surface is by wafer bonding. The take-out surface is the original bevel of the first wafer layer, which can be shaped without cutting or engraving, which can avoid damage of the crystal due to shaping, not only improve the luminous efficiency, but also eliminate the reserved area during cutting. The light-emitting diode of the present invention comprises a conductive layer, a bonding layer on the conductive layer, a first wafer layer on the bonding layer, and a wafer bonding on the first wafer layer. a layer, a light-emitting structure on the wafer bonding layer = a second wafer layer, a transparent conductive layer on the second wafer layer, and an electrode on the transparent conductive layer. The light emitted by the light-emitting structure passes through the light extraction surface. Furthermore, the present invention can also be used to fabricate a light-emitting diode having an electrode on the first wafer layer, the structure comprising a conductive layer, a bonding layer on the conductive layer, and a light-emitting structure on the bonding layer of 8 J276236. The second wafer layer, the bonding layer on the second layer, the wafer-layer layer on the wafer bonding layer, and the second wafer layer on the first day. And the hair is emitted through the light extraction surface. ^ In the implementation of the detailed description of the details of the details (four) and advantages, the two valleys are sufficient for any of the relevant parties to understand the technical content of the present invention and according to the contents of this book, the patent application and Schematic, any u related artisan can (4) _ _ hair _ the purpose and advantages. [Embodiment] In order to further understand the object, structure, features, and functions of the present invention, the embodiment is as follows. The above description of the present disclosure and the following embodiments are described. The invention is further described in the scope of the present invention, and is provided with a further explanation of the scope of the patent application of the present invention. There is a bonding layer 12 on the power layer 13, and a first wafer layer n on the bonding layer 12, a wafer bonding layer 25 on the first wafer layer η, and a second wafer sound 21' on the wafer bonding layer 25 and a second The wafer layer 21 has a transparent conductive layer 3G, and the transparent conductive layer has an electrode 3! The first wafer layer η is an island-shaped thick film structure, and the side area of the island-shaped thick film structure can be used as the light extraction surface 11a, thereby improving luminous efficiency. The light extraction surface 11a is a naturally generated slope, which can change the light travel path to improve the probability of scattering, reflection and refraction of the emitted light, and overcome the problem of total reflection of the emitted light to improve the light extraction efficiency. Second, the layer 21 has a structure of a light-emitting element in which light emitted from the light-emitting element passes through the light extraction surface 11a' and the second wafer layer 21 is bonded to the 1276236 day s1 via wafer bonding. The light-emitting element structure of the second wafer layer 21 is composed of an N ^ column m-v compound layer (for example, Nd) 21b, an active layer A and a p-type, a gallium-based m-V compound (for example, P-GaN) 21d. For the milk, please refer to the schematic diagram of the production method of the 2nd figure to the 2nd figure. If the "2nd AR _ A brother has consistently reduced one L" as shown in the rf2A diagram, the first template 14 is formed on the substrate 10. The first template 14 includes a first wafer layer 1 i, a bonding acoustic surface, and a wafer layer 11 contacting the first substrate 1 〇 and having light extraction (the side area of the 曰曰-曰曰 layer). The template package first forms a first wafer layer 11 on the first substrate 。. The first wafer layer is a mixed film of a gamma-type compound of the gallium series (for example, a group (10)). The selected gas phase toe is formed on the sapphire substrate by the Hydride Ning r Phase Epitaxy. The first wafer layer n is formed to have a thickness of 2 Gm or more and an inner diameter of 15 () micron. The above-mentioned N-GaN crystal layer of the first wafer layer 11 is a regional island-shaped thick film, which avoids a material drop rate when growing a film-like wafer layer and has a high thermal conductivity. The island-shaped thick film provides better heat dissipation, which makes the aeronautical diodes have better stability at high power operation. The conductive layer μ can have a good conductivity. The conductive layer 13 is formed on the bonding layer! 2, and the conductive layer μ can have a good conductivity. The bonding layer 12 is a metal eutectic material and has a reflective property to light. (4) Material of nature, such as Shi Xi, copper (〇0, copper-tungsten alloy (CuW), Shixia alloy 〇, carbon sic, GaN, and Zn〇). As shown in "Fig. 2B" (this figure is "2a" flipped up and down), 1276236 is detached from the substrate 1G to expose (4) - the wafer layer u 3 is separated by _ shot peeling method The laser stripping method can reduce the _ high yield. The shape of the first contact surface nb can be a quadrilateral 曰; the structure is wounded to raise the crystal growth of the u layer u, the touch is ',, the machine is round, the end is 62 degrees The first-turned ilb_cleaning and the step of the (9) joining after the 43-degree to the surface treatment. s leaving the impurities and other forms are not the main work "wafer bonding is two W ^ After the close contact with the film layer, the 'covalent exhibition between the interfaces is integrated into one. The wafer layer bonding is first reduced by chemical mechanical polishing. The surface roughness of the sheet layer, and the silk "the debris attached to the surface of the layer, then the external force is applied to make the surface begin to bond, and finally the heat treatment is performed to form a covalent bond between the interfaces of the mouth and the mouth. As shown in FIG. 2C, a second template is formed on the second substrate 20, wherein the second template 24 includes a second wafer layer 21, a layer u and a carrier 23. The second wafer layer 21 has a light-emitting element. The step of forming the second template 24 includes forming a second wafer layer 21 on the second substrate 20, and the second wafer layer 21 is made of an N-type gallium nitride series melon, a compound compound. A layer (e.g., N-GaN) 21b, an active layer 21c, and a p-type nitriding series ruthenium compound layer (e.g., P-GaN) 21d are provided to provide a structure of a light-emitting element. The second wafer layer 2 is grown on the sapphire substrate as the second substrate 2 in a doped manner. The active layer 21C is a layer of a gallium indium nitride (A1GaInN) compound, which is connected to the PN by a 1276236 electron hole. The active layer of the surface is combined to emit light. Active layer 2 double heterogeneous structure, single quantum well junction Chengcheng quantum structuring. The sound 22 is attached to the second wafer layer 21, and the carrier 23 is used to support the first layer 21 to facilitate the subsequent step of joining the wafer. After the 2D picture is shown (this picture is "2c picture" flipped up and down too. This step is fine laser stripping _ second substrate % and second wafer - layer connection, this laser stripping method can reduce the number The damage of the two wafer layer structure is to improve the yield. After the cleaning and the surface treatment of the (4) shed, the surface of the joint is processed. The next step is as shown in "2E", the first contact surface is joined. n face ha (please also refer to "the town _ Λ Λ 斤 ” 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐Bonded together, while forming the mouthwash layer 25 therebetween, the wafer bonding layer 25 is a medium for the wafer bonding method. The layer 25 is a transparent conductive material such as indium tin oxide (ITO) compound 曰; The thickness of the human 1 layer 25 is 2 nm. The laser peeling method is bonded to the cymbal sheet and the second wafer layer 21 of the silk structure is :::: Γ 片 ^ ^ ^! And can be combined with the first-crystal with high silk rate, such as "Shang 9 Ρ闽 & _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ No, a transparent conductive layer 30 12 1276236 (transparent conductive layer 'TCL) ' is formed on the second wafer layer 21 to form an electrode 31 on the transparent conductive layer %. The first wafer layer 11 and the second wafer layer 21 are utilized. The upper and lower sides of the electric pole 31 and the conductive layer 13 form a vertical electrode structure. In the first embodiment, the N-type 'GaN gallium nitride series _¥ compound layer (for example, N-GaN) 21b and the first wafer - Layer 11 2N_GaN crystal layer is face-to-face bonded, and the electrode 31 is bonded to the P-type gallium nitride family compound layer (for example, P-GaN) 21d via the transparent conductive layer 3' to become a P-type electrode', thus forming a p-side up Illuminating diodes. • Correction, the p-side down LEDs can also be fabricated using the present invention. Please also refer to "3A" to "3G" as the makers of the second embodiment of the present invention. The first template 14 is formed on the first substrate 100. The first template 140 includes a first wafer layer, an adhesive layer 12A and a carrier 130. The first wafer is provided as shown in FIG. 3A. The layer ii〇 contacts the first substrate (10) and has a light extraction surface U〇a (is a first crystal The side area of the layer 110 is related to the step of forming the first template (10), comprising first forming the first wafer layer 11 on the first substrate, and then attaching the carrier 130 to the first wafer layer 11 on the φ adhesive m, The carrier 13 is used to support the first wafer layer 110 to facilitate the subsequent laser stripping and wafer bonding, as shown in "Fig. 3B" (this figure is "3A" flipped up and down), In addition to the first substrate, the first-contact surface of the first wafer layer (10) is exposed. The step is to separate the first substrate 1〇 from the first wafer layer u by a laser lift-off method. The first contact surface leg can be subjected to a step of wafer bonding after being subjected to surface treatment such as cleaning and removing impurities remaining in the laser stripping. 13 1276236 On the other hand, as shown in Fig. 3C, a second template 24 is formed on the second substrate, wherein the second template includes a second wafer layer 2i, a bonding layer and a conductive layer 230. The second wafer layer 21 has a structure of a light-emitting element and contacts the second substrate 200. The step of forming the second template includes first forming the second wafer layer 2) on the second substrate. The second wafer layer 21 is composed of a nitriding layer, a 歹mv group compound layer (for example, N_GaN) 21〇b, an active layer 2i〇c, and a p-type gallium nitride series mv group compound layer (for example, p_GaN) 21〇d. To provide the structure of the light-emitting element. A bonding layer 220 is then formed on the second wafer layer 21A. Finally, a conductive layer 230 is formed on the bonding layer 220. Next, as shown in "Fig. 3D" (this figure is "3C" flipped up and down), the second substrate 200 is removed to expose the second contact surface 210a of the second wafer layer 21A. In this step, the f-substrate 2 is separated from the second wafer layer 21 by a laser lift-off method. The second contact surface may be subjected to a step of cleaning and removing the residual impurities on the surface of the trace to wait for wafer bonding. Next, as shown in "3E", the first contact surface 11b and the second contact surface are joined (please refer to "3B" and "3D" at the same time). This step is to bond the first template 140 and the second template 24 by wafer bonding while forming the wafer bonding layer 250 therebetween. Next, as shown in "3F", the adhesive layer 12〇 and the carrier 13〇 are removed. Finally, as shown in the "3Gth diagram", the electrode 31A is formed on the first wafer layer 11A. The first wafer layer 110 and the electrodes 31 上下 on the upper and lower sides of the second wafer layer 210 and the conductive layer 230 form a vertical electrode. In the second embodiment, the N-type gallium nitride series 14 1276236 铋 compound layer (for example, N_GaN) 21Gb and the U-layer 11G
結晶層面對面接合，且電極310與第—晶片層⑽接合而成為N 型電極。而導電層230經由接合層220與P型氮化鎵系列ιπ-ν族 化合物層（例如P-GaN)薦接合而成為p型導電層，因此_ P侧向下之發光二極體。 士苐3G圖」所示，第二貫施例之發光二極體之結構包括 有導電層23〇、位於導電層23〇 ±之接合層—、位於接合層22〇 上之具發光結構之第二晶片層21G、位於第二晶片層21()上之晶 二接合層250、位於晶片接合層25〇上之具光取出面_之第一 曰曰片層110 ’以及位於第—晶片層11〇上之電極谓。其中發光結 構發出之光線通過光取出面110a。 在第-實施例與第二實施例中，各分層僅相對位置有旦，豆 材料性質核變。故於第二實施财各分層材料特性可參照第 一實施例之敘述而詳加了解。 利用本發明製作之發光二極體，其發光二極體之晶體外型為 倒梯結構（T_tedIn她dPyramid，簡稱τιρ)，可將内部反 所造成光度的損失減少，使得外在發光效轉啸升。本發明所 製作之《電減射有效獻出絲積，提網勻的電紐散 特性’進而提升發光二鋪讀光效率。彻具原錢面之島狀 ，可增加發光二極體側面之出光面積，亦可增加出光區 用雷射剝離法與晶片接合將具發光結構 之曰曰片層由原生基板轉移至具光取出面之另_晶片層上，使具發 15 I2?6236 光結構之“層㈣叫品質絲之發光 光取出效率之另U層達成完美的配合。利二=與具高 光二極體，不但可避免元件_割造成破壞，，衣作之發 亦不需預留切割空The crystal layers are bonded to each other, and the electrode 310 is bonded to the first wafer layer (10) to form an N-type electrode. On the other hand, the conductive layer 230 is bonded to a P-type gallium nitride-based ιπ-ν compound layer (for example, P-GaN) via the bonding layer 220 to form a p-type conductive layer, and thus the _P side is turned down to the light-emitting diode. The structure of the light-emitting diode of the second embodiment includes a conductive layer 23〇, a bonding layer located on the conductive layer 23〇, and a light-emitting structure on the bonding layer 22〇. a second wafer layer 21G, a second bonding layer 250 on the second wafer layer 21, a first wafer layer 110' having a light extraction surface on the wafer bonding layer 25, and a first wafer layer 11 The electrode on the raft is said. The light emitted from the light-emitting structure passes through the light extraction surface 110a. In the first embodiment and the second embodiment, each layer has only a relative position, and the bean material has a nuclear change. Therefore, the characteristics of the layered materials in the second embodiment can be understood in detail by referring to the description of the first embodiment. The light-emitting diode made by the invention has the crystal shape of the light-emitting diode as an inverted ladder structure (T_tedIn her dPyramid, referred to as τιρ), which can reduce the loss of luminosity caused by the internal reverse, so that the external luminous effect is whistling Rise. According to the invention, the "electron reduction effectively contributes to the silk product, and the uniformity of the electric network is improved", thereby improving the light-emitting efficiency of the light-emitting two-story. The island shape of the original money surface can increase the light-emitting area of the side surface of the light-emitting diode, and can also increase the light-emitting area by laser stripping method and wafer bonding to transfer the layer of the light-emitting structure from the original substrate to the light-removing On the other side of the wafer layer, the "layer (4) with the light structure of the 15 I2? 6236 light structure is called the U layer of the light-emitting light extraction efficiency of the quality wire to achieve a perfect fit. Li 2 = with a high-light diode, not only Avoid the destruction of the components _ cut, the hair is not required to reserve cutting
如_本發明以前述之實施例揭露如上1其並翻以限定本 屬。在不脫離本發明之精神和範_，所為之更動與潤飾 屬本發明之專利保護範圍。關於本發明所界定之保 所附之申請專利範圍。 :護範圍請參考 式簡單說明】 第1圖為本發明之第-實施例之結構示意圖； .第2A ®至第2F圖為本發明之第—實關之製作方法示意 圖；及 第3A圖至第3G圖為本發明夕络 ^二實施例之製作方法示意As described above, the present invention is disclosed in the foregoing embodiments and is used to define the genus. It is to be understood that the modifications and refinements of the present invention are within the scope of the invention. With respect to the scope of the patent application as defined by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a first embodiment of the present invention; and FIGS. 2A to 2F are schematic views showing a manufacturing method of the first embodiment of the present invention; and FIG. 3A to FIG. 3G is a schematic diagram of a manufacturing method of the second embodiment of the present invention
【主要元件符號說明】 10、100 第一基板 11、110 第一晶片層 11a、ll〇a 光取出面 lib 、 ll〇b 第一接觸面 12、220 接合層 13、230 導電層 14、140 第一模板 16 1276236 20、200 第二基板 21 > 210 第二晶片層 21a、210a 第二接觸面 21b、210b N型氮化鎵系列;ΠΙ-V族化合物層 21c、210c 活性層 21d、210d P型氮化鎵系列ΙΠ-V族化合物層 25、250 晶片接合層 22、120 黏膠層 23 、 130 載體 24、240 第二模板 30 透明導電層 3 卜 310 電極 17[Description of main component symbols] 10, 100 First substrate 11, 110 First wafer layer 11a, 11A light extraction surface lib, llbb First contact surface 12, 220 Bonding layer 13, 230 Conductive layer 14, 140 A template 16 1276236 20, 200 second substrate 21 > 210 second wafer layer 21a, 210a second contact surface 21b, 210b N-type gallium nitride series; ΠΙ-V compound layer 21c, 210c active layer 21d, 210d P Type GaN series bismuth-V compound layer 25, 250 wafer bonding layer 22, 120 adhesive layer 23, 130 carrier 24, 240 second template 30 transparent conductive layer 3 卜 310 electrode 17