CN203536464U - Led chip - Google Patents
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- CN203536464U CN203536464U CN201320705507.8U CN201320705507U CN203536464U CN 203536464 U CN203536464 U CN 203536464U CN 201320705507 U CN201320705507 U CN 201320705507U CN 203536464 U CN203536464 U CN 203536464U
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Abstract
The utility model relates to an LED chip. The LED chip comprises a substrate, a semiconductor layer of a first conductive type, a luminescent layer, a semiconductor layer of a second conductive type, a reflecting layer and an isolating layer which are stacked orderly, and also comprises a plurality of first electrode holes, a plurality of second electrode holes, first electrodes and second electrodes, wherein at least two second electrode holes surrounding one first electrode hole are distributed evenly. The first electrode holes are used to electrically connect the first electrodes with the semiconductor layer of the first conductive type, and the second electrode holes are used to electrically connect the second electrodes with the semiconductor layer of the second conductive type. The LED chip of the embodiment of the utility model enables the distances from at least part of positive electrodes to the negative electrodes in the LED chip to be consistent and the resistance of a current from the least part of positive electrodes to the negative electrodes to be consistent, thereby improving the current density uniformity and the luminance uniformity.
Description
Technical field
The utility model relates to light-emitting component technical field, relates in particular to a kind of LED chip.
Background technology
Along with LED(Light Emitting Diode, light-emitting diode) lighting technology growing, the application of LED in people's daily life is also more and more extensive.
The luminous of LED is to utilize anodal electric current to arrive negative pole to complete, electric current can arrive negative pole by positive pole with the route of resistance minimum, general resistance value is decided by the distance of electric current route, and anodal to negative pole, more resistance value is less, more resistance is just larger to negative pole for positive pole.Yet, electrode in existing LED is generally wire-like, this makes an electric current of single-point enter negative pole from positive pole, and the brightest to the nearest distance of electric current to negative pole with positive pole, other position will due to apart from metal wire compared with far away and resistance more greatly, relatively dark, thereby there is the problem that current density is inhomogeneous, cause non-uniform light.
Utility model content
technical problem
In view of this, the technical problems to be solved in the utility model is how to make the luminous of LED try one's best evenly.
solution
In order to address the above problem, according to the utility model one embodiment, provide a kind of LED chip, it comprises: substrate, the first conductive-type semiconductor layer, is positioned at the front of described substrate, luminescent layer, is positioned at the front of described the first conductive-type semiconductor layer, the second conductive-type semiconductor layer, is positioned at the front of described luminescent layer, reflector, is positioned at the front of described the second conductive-type semiconductor layer, a plurality of the first electrode holes, extend through described reflector, described the second conductive-type semiconductor layer and described luminescent layer separately, a plurality of the second electrode holes, extend through described reflector separately, the first electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the first electrode hole and described the first conductive-type semiconductor layer, the second electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the second electrode hole and described the second conductive-type semiconductor layer, and separator, be positioned at the front in described reflector, in order to described the first electrode and described the second electrode insulation are isolated, wherein, on the front in described reflector, the matrix form that described a plurality of the first electrode hole is the capable N row of M distributes, M is more than or equal to 1 integer, N is more than or equal to 2 integer, described in each row, the first electrode hole equidistantly distributes in the front in described reflector, each is listed as described the first electrode hole and equidistantly distributes in the front in described reflector, around at least two described the second electrode holes of described first electrode hole be uniformly distributed and described at least two described the second electrode holes the positive upright projection in described reflector to by around described the first electrode hole identical in the distance of the positive upright projection in described reflector.
For above-mentioned LED chip, in a kind of possible implementation, described in each row, at the center of the positive upright projection in described reflector point-blank, each is listed as described the first electrode hole at the center of the positive upright projection in described reflector point-blank to the first electrode hole.
For above-mentioned LED chip, in a kind of possible implementation, described the first electrode comprises: the electrode material of filling the first electrode hole described in each, and the lead-in wire that the electrode material that filling is arranged in the first electrode hole of the second electrode district is connected to the electrode material of the first electrode hole that is arranged in the first region, wherein, described the first region refers to that described the first electrode is at the positive domain of the existence in described reflector, and described the second electrode district refers to that described the second electrode is at the positive domain of the existence in described reflector; Described the second electrode comprises: fill the electrode material of the second electrode hole described in each, and make to fill described in each electrode material of the second electrode hole and avoid the first electrode hole and described lead-in wire described in each and interconnective part.
For above-mentioned LED chip, in a kind of possible implementation, described a plurality of the first electrode holes are not less than 1% in the area summation of the positive upright projection in described reflector with respect to the ratio of the positive area in described reflector; Described a plurality of the second electrode hole is not less than 1% in the area summation of the positive upright projection in described reflector with respect to the ratio of the positive area in described reflector.
For above-mentioned LED chip, in a kind of possible implementation, also comprise conductive layer, described conductive layer is between described the second conductive-type semiconductor layer and described reflector, and described the first electrode hole extends through described conductive layer.
For above-mentioned LED chip, in a kind of possible implementation, at described conductive layer, described the first electrode and described the second electrode, be formed with protective layer on one of at least.
For above-mentioned LED chip, in a kind of possible implementation, also comprise insulating protective film, described insulating protective film covers all sides of this LED chip and only exposes described the first electrode and described the second electrode.
beneficial effect
Around at least two described the second electrode holes of described first electrode hole, be uniformly distributed by making, wherein, the first electrode hole is used so that the first electrode and the first conductive-type semiconductor layer are electrically connected, the second electrode hole is used so that the second electrode and the second conductive-type semiconductor layer are electrically connected, according to the LED chip of the utility model embodiment, can make in LED chip that positive electrode is consistent to the distance of negative electrode at least partly, at least partly positive electrode is consistent to the resistance of flowing through in electric current year of negative electrode, thereby compared with prior art, can improve the uniformity of current density, send out uniformity of light.
According to below with reference to accompanying drawing to detailed description of illustrative embodiments, it is clear that further feature of the present utility model and aspect will become.
Accompanying drawing explanation
The accompanying drawing that is included in specification and forms a part for specification shows exemplary embodiment of the present utility model, feature and aspect together with specification, and for explaining principle of the present utility model.
Fig. 1 is the flow chart of manufacture method of the LED chip of the utility model embodiment;
Fig. 2 (a)～Fig. 2 (d) is respectively the profile of the structure that forms in the manufacture method of LED chip of the utility model embodiment;
Fig. 3 (a)～Fig. 3 (e) is respectively the vertical view of the structure that forms in the manufacture method of LED chip of the utility model embodiment;
Fig. 4 is the structural representation of the LED chip of the utility model embodiment.
description of reference numerals
10: substrate; 20: the first conductive-type semiconductor layers; 30: luminescent layer; 40: the second conductive-type semiconductor layers; 50,51,52,410: the first electrode holes; 60: conductive layer; 70: reflector; 80,420: the second electrode holes; 90: insulating protective layer; 400:LED chip; 500: the first electrodes; 800: the second electrodes.
Embodiment
Below with reference to accompanying drawing, describe various exemplary embodiments of the present utility model, feature and aspect in detail.The identical same or analogous element of Reference numeral presentation function in accompanying drawing.Although the various aspects of embodiment shown in the drawings, unless otherwise indicated, needn't draw accompanying drawing in proportion.
Here special-purpose word " exemplary " means " as example, embodiment or illustrative ".Here as " exemplary " illustrated any embodiment, needn't be interpreted as being better than or being better than other embodiment.
In addition, in order better to illustrate, in embodiment below, provided numerous details by the utility model.It will be appreciated by those skilled in the art that and there is no some detail, the utility model can be implemented equally.In some instances, the method for knowing for those skilled in the art, means, element and circuit are not described in detail, so that highlight purport of the present utility model.
Fig. 1 is according to the flow chart of the LED chip manufacture method of the utility model embodiment, in conjunction with Fig. 2 (a), is described in detail as follows to Fig. 2 (d), Fig. 3 (a) shown in Fig. 3 (e).The method comprises:
Step S1, for the LED epitaxial wafer that stacks gradually the first conductive-type semiconductor layer 20, luminescent layer 30 and the second conductive-type semiconductor layer 40 on substrate 10, by the etching mode of for example dry type or wet type, utilize first mask etching the second conductive-type semiconductor layer 40 and luminescent layer 30 to expose the first conductive-type semiconductor layer 20, form the structure that includes a plurality of the first electrode holes in the second conductive-type semiconductor layer 40 and luminescent layer 30 as shown in Figure 2 (a) shows.Wherein, the first electrode hole is by for making the first following electrode contact with the first conductive-type semiconductor layer 20.
In a kind of possible implementation, as shown in Fig. 3 (a), described LED chip can comprise three the first electrode holes, and is the matrix form distribution of 1 row 3 row.Particularly, the first electrode hole 50, the first electrode hole 51, and first electrode hole 52 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts on straight line AA ', and the upright projection of the first electrode hole 51 in the first conductive-type semiconductor layer 20 fronts is positioned at the positive centre of the first conductive-type semiconductor layer 20, the first electrode hole 50 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts to the first electrode hole 51 distance L 1 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts, identical in the distance L 2 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts to the first electrode hole 51 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts with the first electrode hole 52.
In a kind of possible implementation, substrate 10 can be specially the various substrates with different crystal orientations, for example sapphire, silicon or silicon carbide substrates.
In addition, the material of the first conductive-type semiconductor layer 20 can be N-shaped gallium nitride, can be also N-shaped AlGaInP (AlGaInP).The material of the second conductive-type semiconductor layer 40 can be p-type gallium nitride, can be also p-type AlGaInP.In a kind of possible implementation, the first conductive-type semiconductor layer 20 and the second conductive-type semiconductor layer 40 adopt respectively N-shaped gallium nitride and p-type gallium nitride to make.
Step S2, in etching on the second conductive-type semiconductor layer 40 of the first electrode hole, plate for example ITO, ZnO, conductive polymer material, PEDOT or nano carbon material high-transmission rate electric conducting material as conductive layer 60, wherein conductive layer 60 must expose the bottom of each first electrode hole, thereby formation each first electrode hole as shown in Fig. 2 (b) extends through the structure of conductive layer 60.
Step S3 covers by individual layer or multilayer silicon dioxide (SiO for example on the sidewall of each the first electrode hole and conductive layer 60
2), DBR(can be by SiO
2, TiO
2, SiNx, Ta
2o
5, MgF
2, one or more in ZnS make) or the insulating material of the high reflectance such as photon crystal structure as reflector 70, wherein reflector 70 must expose the first conductive-type semiconductor layer 20 that is positioned at the first electrode hole bottom, thereby forms the structure that each first electrode hole as shown in Figure 2 (c) extends through reflector 70.Wherein, reflector 70 is own non-conductive, and therefore, except reverberation, the effect of insulation isolation is also played in reflector 70.
Step S4, on reflector 70, by the etching mode of for example dry type or wet type, utilize the second mask to carry out etching to expose the second conductive-type semiconductor layer 40 or conductive layer 60, form the structure that also includes a plurality of the second electrode holes 80 in reflector 70 as shown in Figure 2 (d) shows.Wherein, the second electrode hole 80 is by for making the second following electrode contact with the second conductive-type semiconductor layer 40, at least two described the second electrode holes around described first electrode hole are uniformly distributed, and described at least two described the second electrode holes in reflector, 70 positive upright projection is identical to the distance of described the first electrode hole positive upright projection of 70 in reflector.
It is example that three the first electrode holes of still take are the LED chip structure that the matrix form of 1 row 3 row distributes, and in a kind of possible implementation, can adopt the second electrode hole as shown in Figure 3 (b) along the distribution of the first electrode hole.The area summation of described the first electrode hole positive upright projection of 70 in reflector should be not less than 1% with respect to the ratio of the positive area in reflector 70; The area summation of described the second electrode hole positive upright projection of 70 in reflector should be not less than 1% with respect to the ratio of the positive area in reflector 70.
Like this, because the distance of at least part of the second electrode hole to the first electrode hole is consistent, distance between the positive and negative electrode that makes in the LED chip of finally making to form via these electrode holes is consistent and to flow through the resistance that the electric current of this part positive and negative electrode experiences consistent, thereby compared with prior art, can effectively improve electric current and send out uniformity of light.In addition, compared with prior art, the LED chip structure of the utility model embodiment can reduce 0.1V～0.3V by its operating voltage, thereby luminous efficacy has been improved to 10%～15%.
Step S5, forms and is connected to the first electrode of the first conductive-type semiconductor layer 20 and the second electrode that is connected to the second conductive-type semiconductor layer 40 via the second electrode hole via the first electrode hole.
In a kind of possible implementation, in above-mentioned steps S5, in order to form the operation of the first electrode and the second electrode, can comprise bottom electrode making step, isolation step and surface electrode making step, wherein:
In bottom electrode making step, utilize electrode material to fill each first electrode hole and each second electrode hole, the electrode material that makes to be arranged in the first electrode hole of the second predetermined electrode district is connected to the electrode material of the first electrode hole that is arranged in predetermined the first region via lead-in wire, and the electrode material that makes each second electrode of filling avoids each first electrode hole and lead-in wire interconnects, thereby form plan structure bottom electrode as shown in Figure 3 (c).
In a kind of possible implementation, as shown in Figure 3 (c), described lead-in wire can enter the first region from the second electrode district along a center line AA ' of this LED chip, reduces the possibility that contacts with the second electrode to try one's best.
In isolation step, at least on the front in reflector 70 covering insulating material to form separator, and utilize the 3rd mask to carry out etching to this separator, with at the first region, expose to fill each first electrode hole electrode material, in the second electrode district, at least expose electrode material and/or its coupling part of filling each second electrode hole 80, thereby form the plan structure as shown in Fig. 3 (d).
Wherein, as shown in Fig. 3 (d), the first region can be positioned at the left end in LED chip front, and the second electrode district can be positioned at the right-hand member in LED chip front, has the isolated area consisting of separator between the two, to guarantee that both electrically do not contact.
In surface electrode making step, at least in the positive covered by electrode material of the first region to complete the first electrode, and at least in the positive covered by electrode material of the second electrode district to complete the second electrode, thereby form the plan structure as shown in Fig. 3 (e).
Like this, because the first electrode and the second electrode are divided into the both sides of the axis in this LED chip front across isolated area, it is too many that the front face area of two electrodes is unlikely to differ, during installation, especially when covering crystal type and install, conducting metal can be not just o'clock to two electrodes and be of moderate size, thereby prevented the phenomenon that occurs that conducting metal overflows, further improved the yield of product.
It should be noted that, in said method, although make to be formed with conductive layer 60 between the second conductive-type semiconductor layer 40 and reflector 70 by step S2, so that electric current is more even.Yet, those skilled in the art should be able to understand, even if do not form conductive layer 60, as long as 70 positive upright projection is identical to the distance of described the first electrode hole positive upright projection of 70 in reflector in reflector to guarantee at least two described the second electrode holes around described first electrode hole, so that the resistance that at least partly positive electrode experiences to the electric current of negative electrode is consistent, just can effectively improve a uniformity of light.
In addition,, in a kind of possible implementation, also can form protective layer on one of at least at conductive layer 60, the first electrode and the second electrode.Described protective layer can be in the metal materials such as titanium, nickel, chromium and gold one or more make, its thickness is
in time, can be used by tin cream or elargol welding.
In a kind of possible implementation; at surface electrode, form in step; also make high insulating material such as silicon dioxide (SiO2) etc. as the coated whole LED chip of insulating protective layer 90; only expose the first region 500 and the second electrode district 800; thereby can form the plan structure as shown in Fig. 3 (e); to avoid in the installation process of this LED chip, especially covering in brilliant installation because conduction produces high reverse leakage current (Reverse current, I
r).Because silicon dioxide is the material that a kind of hardness ratio is harder; the internal stress of generation when using wolfram steel cutter to carry out splitting in separated sliver process very likely; make the silicon dioxide layer of protection of the LED chip split occur that film splits, and then make to infiltrate in element in order to the material of bonding light-emitting component and substrate.In this case, while using wolfram steel cutter to carry out splitting, on the LED chip surface of being split, be coated with last layer flexible material in sliver process, can effectively offset the internal stress that wolfram steel cutter causes when splitting, thereby can prevent that silicon dioxide layer of protection film from splitting.
According to another embodiment of the present utility model, a kind of LED chip is also provided, continue shown in Fig. 3 (e), to be described in detail as follows to Fig. 2 (d), Fig. 3 (a) with reference to Fig. 2 (a).
The LED chip providing according to the utility model embodiment can comprise: the substrate 10 stacking gradually, the first conductive-type semiconductor layer 20, luminescent layer 30, the second conductive-type semiconductor layer 40 and by individual layer or multilayer, had the insulating material (SiO for example of high reflectance
2, DBR(can be by SiO
2, TiO
2, SiNx, Ta
2o
5, MgF
2, one or more in ZnS make) or photon crystal structure etc.) reflector 70 of making; A plurality of the first electrode holes, it extends through reflector 70, the second conductive-type semiconductor layer 40 and luminescent layer 30 separately; A plurality of the second electrode holes 80, extend through reflector 70 separately; The first electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the first electrode hole and described the first conductive-type semiconductor layer; The second electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the second electrode hole and described the second conductive-type semiconductor layer; And separator, be positioned at the front in described reflector, in order to by described the first electrode and described the second electrode insulation isolation.
In a kind of possible implementation, the area summation of described a plurality of the first electrode holes positive upright projection of 70 in reflector should be not less than 1% with respect to the ratio of the positive area in reflector 70; The area summation of described a plurality of the second electrode hole positive upright projection of 70 in reflector should be not less than 1% with respect to the ratio of the positive area in reflector 70.
Wherein, 70 the front from reflector, at least two described the second electrode holes that distribute around described first electrode hole are uniformly distributed, and described at least two described the second electrode holes in reflector, 70 positive upright projection is identical to the distance of described the first electrode hole positive upright projection of 70 in reflector.Like this, because the distance of at least part of the second electrode hole 80 to first electrode holes is consistent, distance between the positive and negative electrode that makes to be formed by these electrode holes is consistent and to flow through the resistance that the electric current of this part positive and negative electrode experiences consistent, thereby compared with prior art, can effectively improve current density and send out uniformity of light.
In a kind of possible implementation, substrate 10 can be specially the various substrates with different crystal orientations, for example sapphire, silicon or silicon carbide substrates.
In addition, the material of the first conductive-type semiconductor layer 20 can be N-shaped gallium nitride, can be also N-shaped AlGaInP (AlGaInP).The material of the second conductive-type semiconductor layer 40 can be p-type gallium nitride, can be also p-type AlGaInP.In a kind of possible implementation, the first conductive-type semiconductor layer 20 and the second conductive-type semiconductor layer 40 adopt respectively N-shaped gallium nitride and p-type gallium nitride to make.Correspondingly, the first electrode and the second electrode are respectively negative electrode and positive electrode.
In a kind of possible implementation, as shown in Fig. 3 (a), Fig. 3 (b), described LED chip can comprise three the first electrode holes, and is the matrix form distribution of 1 row 3 row.The first electrode hole 50, the first electrode hole 51, the first electrode hole 52 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts on straight line AA ', and the upright projection of the first electrode hole 51 in the first conductive-type semiconductor layer 20 fronts is positioned at the positive centre of the first conductive-type semiconductor layer 20, the first electrode hole 50 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts to the first electrode hole 51 distance L 1 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts, identical in the distance L 2 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts to the first electrode hole 51 at the center of the upright projection in the first conductive-type semiconductor layer 20 fronts with the first electrode hole 52.
In a kind of possible implementation, between reflector 70 and the second conductive-type semiconductor layer 40, also can be formed with conductive layer 60, and the electric conducting material that conductive layer 60 preferably has a high-transmission rate by such as ITO, ZnO, conductive polymer material, PEDOT or nano carbon material etc. forms, with further obtain current density more evenly, the better effect of reflecting effect.
In a kind of possible implementation, as shown in Figure 3 (c), the first electrode can comprise: the electrode material of filling each first electrode hole; And the electrode material that filling is arranged in to the first electrode hole of the second electrode district is connected to the lead-in wire of the electrode material of the first electrode hole that is arranged in the first region.Wherein, the first region refer to the first electrode in reflector 70 positive domain of the existence, shown in Fig. 3 (c), be the left end of cutaway view; And, the second electrode district refer to the second electrode in reflector 70 positive domain of the existence, shown in Fig. 3 (c), be the right-hand member of cutaway view.
Correspondingly, as shown in Figure 3 (c), the second electrode can comprise: the electrode material of filling each second electrode hole 80; And the electrode material that makes to fill each second electrode hole 80 is avoided each first electrode hole and above-mentioned lead-in wire and interconnective part.
In addition, as above with reference to figure 3(d), Fig. 3 (e) introduces, in order to isolate better the first electrode and the second electrode, also can be by proceed above-mentioned isolation step and surface electrode making step in the structure shown in Fig. 3 (c), further to improve the quality of this LED chip.
In a kind of possible implementation, at conductive layer 60, the first electrode and the second electrode, also can be formed with protective layer on one of at least.Described protective layer can be in the metal materials such as titanium, nickel, chromium and gold one or more make, its thickness is
in time, can be used by tin cream or elargol welding.
In addition; in a kind of possible implementation; this LED chip also can comprise the insulating protective layer 90 of being made by the insulating material of high rigidity; this insulating protective layer 90 covers all sides of this LED chip and only exposes the first electrode 500 and the second electrode 800, thereby can form the plan structure as shown in Fig. 3 (e).
It should be noted that, although with the first electrode hole be LED chip that the matrix form of 1 row 3 row distributes and manufacture method thereof introduced can improve uniformity of luminance LED chip as above, those skilled in the art will be understood that the utility model is not limited to this.
In a kind of possible implementation, according to the LED chip of the utility model embodiment, it can also be structure as shown in Figure 4, as shown in Figure 4, different from the LED chip of said structure is, LED chip 400 can comprise six the first electrode holes 410, and six the first electrode holes are the matrix form distribution of 2 row 3 row, and the distance of the second electrode hole 420 to first electrode holes 410 that at least distribute around the first electrode hole 410 is identical, and the manufacture method of LED chip 400 is consistent with the flow chart described in Fig. 1.
In addition, the first electrode hole can also be 2 row 2 column distributions or 1 row 4 column distributions etc., the number of the first electrode hole and distribution can specifically be determined according to the size of LED chip, as long as guarantee around at least two described the second electrode holes of described first electrode hole identical in the distance of the positive upright projection in described reflector to described the first electrode hole in the positive upright projection in described reflector, so that the resistance that at least partly positive electrode experiences to the electric current of negative electrode is consistent, just can effectively improve a uniformity of light.
The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of described claim.
Claims (7)
1. a LED chip, is characterized in that, comprising:
Substrate;
The first conductive-type semiconductor layer, is positioned at the front of described substrate;
Luminescent layer, is positioned at the front of described the first conductive-type semiconductor layer;
The second conductive-type semiconductor layer, is positioned at the front of described luminescent layer;
Reflector, is positioned at the front of described the second conductive-type semiconductor layer;
A plurality of the first electrode holes, extend through described reflector, described the second conductive-type semiconductor layer and described luminescent layer separately;
A plurality of the second electrode holes, extend through described reflector separately;
The first electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the first electrode hole and described the first conductive-type semiconductor layer;
The second electrode, is positioned at the front in described reflector at least partly, in electrical contact via described the second electrode hole and described the second conductive-type semiconductor layer; And
Separator, is positioned at the front in described reflector, in order to by described the first electrode and described the second electrode insulation isolation,
Wherein, on the front in described reflector, the matrix form that described a plurality of the first electrode hole is the capable N row of M distributes, M is more than or equal to 1 integer, N is more than or equal to 2 integer, described in each row, the first electrode hole equidistantly distributes in the front in described reflector, each is listed as described the first electrode hole and equidistantly distributes in the front in described reflector, around at least two described the second electrode holes of described first electrode hole be uniformly distributed and at least two described the second electrode holes the positive upright projection in described reflector to by around described the first electrode hole identical in the distance of the positive upright projection in described reflector.
2. LED chip according to claim 1, it is characterized in that, described in each row, at the center of the positive upright projection in described reflector point-blank, each is listed as described the first electrode hole at the center of the positive upright projection in described reflector point-blank to the first electrode hole.
3. LED chip according to claim 1, is characterized in that,
Described the first electrode comprises:
Fill the electrode material of the first electrode hole described in each, and
The electrode material that filling is arranged in to the first electrode hole of the second electrode district is connected to the lead-in wire of the electrode material of the first electrode hole that is arranged in the first region, wherein, described the first region refers to that described the first electrode is at the positive domain of the existence in described reflector, and described the second electrode district refers to that described the second electrode is at the positive domain of the existence in described reflector;
Described the second electrode comprises:
Fill the electrode material of the second electrode hole described in each, and
Make to fill described in each electrode material of the second electrode hole and avoid the first electrode hole and described lead-in wire described in each and interconnective part.
4. LED chip according to claim 1, is characterized in that, described a plurality of the first electrode holes are not less than 1% in the area summation of the positive upright projection in described reflector with respect to the ratio of the positive area in described reflector; Described a plurality of the second electrode hole is not less than 1% in the area summation of the positive upright projection in described reflector with respect to the ratio of the positive area in described reflector.
5. according to the LED chip described in any one in claim 1 to 4, it is characterized in that, also comprise conductive layer, described conductive layer is between described the second conductive-type semiconductor layer and described reflector, and described the first electrode hole extends through described conductive layer.
6. according to the LED chip described in any one in claim 1 to 4, it is characterized in that, at described conductive layer, described the first electrode and described the second electrode, be formed with protective layer on one of at least.
7. according to the LED chip described in any one in claim 1 to 4, it is characterized in that, also comprise insulating protective film, described insulating protective film covers all sides of this LED chip and only exposes described the first electrode and described the second electrode.
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|---|---|---|---|
| CN201320705507.8U CN203536464U (en) | 2013-11-08 | 2013-11-08 | Led chip |
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|---|---|---|---|
| CN201320705507.8U CN203536464U (en) | 2013-11-08 | 2013-11-08 | Led chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794695A (en) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | Flip chip type light-emitting diode (LED) chip |
| CN104810440A (en) * | 2015-05-12 | 2015-07-29 | 杭州士兰明芯科技有限公司 | Flip LED (Light Emitting Diode) chip and manufacturing method thereof |
| CN104835891A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Flip led chip and manufacturing method thereof |
-
2013
- 2013-11-08 CN CN201320705507.8U patent/CN203536464U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794695A (en) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | Flip chip type light-emitting diode (LED) chip |
| WO2015127744A1 (en) * | 2014-02-25 | 2015-09-03 | 深圳市兆明芯科技控股有限公司 | Flip-chip led chip |
| CN104810440A (en) * | 2015-05-12 | 2015-07-29 | 杭州士兰明芯科技有限公司 | Flip LED (Light Emitting Diode) chip and manufacturing method thereof |
| CN104835891A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Flip led chip and manufacturing method thereof |
| CN104810440B (en) * | 2015-05-12 | 2018-11-09 | 杭州士兰明芯科技有限公司 | A kind of flip LED chips and preparation method thereof |
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