CN203503689U

CN203503689U - Flip-chip-type LED chip

Info

Publication number: CN203503689U
Application number: CN201320568040.7U
Authority: CN
Inventors: 吴裕朝; 刘艳
Original assignee: Individual
Current assignee: Individual
Priority date: 2013-09-12
Filing date: 2013-09-12
Publication date: 2014-03-26
Anticipated expiration: 2023-09-12

Abstract

The utility model discloses a flip-chip LED chip. The flip-chip LED chip includes a substrate; and a positive electrode, an isolation zone, and a negative electrode which are disposed in sequence on the front surface of the substrate along the horizontal direction, wherein the horizontal direction is a direction which is parallel to the front surface of the substrate; a vertical projection, which is on the front surface of the substrate, of the isolation zone is between the vertical projections which are on the front surface of the substrate, of the positive electrode and the negative electrode; and the central line of the isolation zone in the horizontal direction overlaps a vertical projection, which is on the front surface of the substrate, of a diagonal of the flip-chip LED chip. According to the flip-chip LED chip, the longest distance between the positive electrode and the negative electrode is achieved, and the optical welding effect in production of a conventional LED automatic die bonder is achieved, so as to avoid conduction of the positive electrode and negative electrode in packaging, and improve packaging qualified rate of the flip-chip LED chip.

Description

Crystal covering type LED chip

Technical field

The utility model relates to light-emitting component technical field, relates in particular to a kind of crystal covering type LED chip.

Background technology

Along with LED(Light Emitting Diode, light-emitting diode) lighting technology growing, the application of LED in people's daily life is also more and more extensive.

Employing is covered LED(that crystalline substance (Flip Chip) mode encapsulates hereinafter referred to as crystal covering type LED) die bond mode simple, have higher reliability, volume production feasibility is significantly promoted, and the advantages such as the processing procedure time, high yield, the heat-conducting effect that have shortening high-temperature baking concurrently are good, high amount of light, become the technology that industry does one's utmost to carry out then.

In the structure of the substrate being electrically connected by the positive electrode at crystal covering type LED chip and negative electrode, carry out gold goal, tin ball or eutectic and weld crystal covering type LED chip, to realize the encapsulation of crystal covering type LED chip.Between the positive electrode of crystal covering type LED chip and negative electrode, be formed with isolated area, to prevent two electric pole short circuits.In order to obtain maximum illumination effect, it is narrower that the isolated area of existing crystal covering type LED chip is done conventionally, and isolated area setting of taking back or take over along with the difference of positive electrode and negative electrode size.But narrower isolated area easily in chip package process, electrically conducts and causes short circuit thereby the reasons such as Yin Gaowen cause two electrodes to stride across isolated area.In addition, the automatic die bond machine of traditional LED is when chip package, and the area of some pin mark conducting metal (for example elargol or tin cream) is consistent, is generally the reciprocity area of a circle.The crystal covering type LED chip of existing structure cannot be used the automatic die bond machine of traditional LED to produce, or when using the automatic die bond machine of traditional LED to produce conducting metal appearance point on same electrode or with time point the phenomenon on two electrodes, or because of a too small phenomenon that causes conducting metal to overflow electrode surface and then occur short circuit of electrode.These all affect the encapsulation yield of LED.

Utility model content

technical problem

In view of this, the technical problems to be solved in the utility model is how to improve the encapsulation yield of crystal covering type LED chip.

solution

In order to address the above problem, according to embodiment of the present utility model, provide a kind of crystal covering type LED chip, comprising: substrate; And along continuous straight runs is successively set on positive electrode, isolated area and negative electrode on the front of described substrate, wherein, described horizontal direction is the direction parallel with the front of described substrate, the upright projection of described isolated area on the front of described substrate be at described positive electrode and described negative electrode between the upright projection on the front at described substrate, and the upright projection of a diagonal of the center line of described isolated area in described horizontal direction and described crystal covering type LED chip on the front of described substrate is overlapped.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described substrate is square.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, the minimum widith of described isolated area in described horizontal direction is greater than 0.05mm.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described positive electrode be shaped as polygon or circle, described negative electrode be shaped as polygon or circle.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described crystal covering type LED chip also comprises: the first conductive-type semiconductor layer, is positioned at the front of described substrate; Luminescent layer, is positioned at the front of described the first conductive-type semiconductor layer; The second conductive-type semiconductor layer, is positioned at the front of described luminescent layer; And separator, be positioned at the front of described the second conductive-type semiconductor layer; Wherein, described negative electrode is positioned at the front of described separator, described positive electrode is positioned at the front of described separator, the part that described separator exposes is described isolated area, described positive electrode is in electrical contact by running through through hole and described second conductive-type semiconductor layer of described separator, and described negative electrode is in electrical contact by running through through hole and described first conductive-type semiconductor layer of described separator, described the second conductive-type semiconductor layer and described luminescent layer.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described separator is also positioned at the side of described crystal covering type LED chip.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described separator is any one in SiO2, DBR, photon crystal structure, SiNx, AlOx and AlN.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described crystal covering type LED chip also comprises: protective layer, is positioned at the front of described negative electrode and/or the front of described positive electrode.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, described protective layer is any one in titanium, nickel, chromium, silver and gold copper-base alloy.

To above-mentioned crystal covering type LED chip, in a kind of possible implementation, the thickness of described protective layer is

beneficial effect

By the diagonal along crystal covering type LED chip, be provided for isolating the isolated area of positive electrode and negative electrode, can be so that the distance between positive electrode and negative electrode be the longest according to the crystal covering type LED chip of the utility model embodiment, when using the automatic die bond machine of traditional LED to produce, can realize best welding effect, thereby can avoid the mutual conduction of positive electrode and negative electrode when crystal covering type LED encapsulates, improve the encapsulation yield of crystal covering type LED.

According to below with reference to accompanying drawing to detailed description of illustrative embodiments, it is clear that further feature of the present utility model and aspect will become.

Accompanying drawing explanation

The accompanying drawing that is included in specification and forms a part for specification shows exemplary embodiment of the present utility model, feature and aspect together with specification, and for explaining principle of the present utility model.

Fig. 1 illustrates the vertical view of the crystal covering type LED chip of the utility model one embodiment;

Fig. 2 illustrates the vertical view of the crystal covering type LED chip of the another embodiment of the utility model;

Fig. 3 illustrates the vertical view of the crystal covering type LED chip of the another embodiment of the utility model;

Fig. 4 a illustrates the vertical view of the crystal covering type LED chip of the another embodiment of the utility model;

Fig. 4 b illustrates the vertical view of the crystal covering type LED chip of the another embodiment of the utility model;

Fig. 5 illustrates the vertical view of the crystal covering type LED chip of the another embodiment of the utility model;

Fig. 6 illustrates the sectional axonometric drawing of the crystal covering type LED chip of the utility model embodiment;

Fig. 7 illustrates preparation method's the flow chart of the crystal covering type LED chip of the utility model embodiment;

Fig. 8 a～Fig. 8 c illustrates the profile of the structure that forms in the preparation method of crystal covering type LED chip of the utility model embodiment; And

Fig. 9 a and Fig. 9 b illustrate formed bottom electrode schematic diagram in the preparation method of crystal covering type LED chip of the utility model embodiment.

reference numerals list

10: substrate; 11,21,31,411,412,51,80: positive electrode; 12,22,32,421,422,52: isolated area; 13,23,33,431,432,53,90: negative electrode; 20: the first conductive-type semiconductor layers; 30: luminescent layer; 40: the second conductive-type semiconductor layers; 50: separator; 60: the second through holes; 70: the first through holes.

Embodiment

Below with reference to accompanying drawing, describe various exemplary embodiments of the present utility model, feature and aspect in detail.The identical same or analogous element of Reference numeral presentation function in accompanying drawing.Although the various aspects of embodiment shown in the drawings, unless otherwise indicated, needn't draw accompanying drawing in proportion.

Here special-purpose word " exemplary " means " as example, embodiment or illustrative ".Here as " exemplary " illustrated any embodiment, needn't be interpreted as being better than or being better than other embodiment.

In addition, in order better to illustrate, in embodiment below, provided numerous details by the utility model.It will be appreciated by those skilled in the art that and there is no some detail, the utility model can be implemented equally.In other example, the method for knowing for those skilled in the art, means, element and circuit are not described in detail, so that highlight purport of the present utility model.

Fig. 1 illustrates according to the vertical view of the crystal covering type LED chip of the utility model one embodiment.As shown in Figure 1, this crystal covering type LED chip mainly comprises: substrate 10 and along continuous straight runs are successively set on positive electrode 11, isolated area 12 and the negative electrode 13 on the front of substrate 10.Wherein, this horizontal direction can be the parallel direction in the front with substrate 10 shown in dotted line B in Fig. 1.The upright projection of isolated area 12 on the front of substrate 10 can be at positive electrode 11 and negative electrode 13 between the upright projection on the front of substrate 10, can be used in isolation positive electrode 11 and negative electrode 13.And in the crystal covering type LED chip of the utility model embodiment, the upright projection of a diagonal of the center line A of this isolated area 12 in described horizontal direction and crystal covering type LED chip on the front of substrate 10 can be overlapped.

The positive electrode of the crystal covering type LED chip of the utility model embodiment and negative electrode design are at the two ends, diagonal angle in substrate 10 fronts, can proper extension for isolating the length of the isolated area of positive electrode and negative electrode, even also can realize preferably welding effect when using the automatic die bond machine of traditional LED to produce, thereby can avoid the mutual conduction of positive electrode and negative electrode when crystal covering type LED encapsulates, improve the encapsulation yield of crystal covering type LED.

In a kind of possible implementation, as shown in Figure 1, the positive electrode 11 and the negative electrode 13 that cover brilliant LED chip can be square, and positive electrode 11 is symmetrical with respect to the center line A of isolated area 12 with negative electrode 13.

In the possible implementation of another kind, as shown in Figure 2, the positive electrode 21 and the negative electrode 23 that cover brilliant LED chip can be pentagon, and positive electrode 21 is symmetrical with respect to the center line A of isolated area 22 with negative electrode 23.

In the possible implementation of another kind, as shown in Figure 3, the positive electrode 31 and the negative electrode 33 that cover brilliant LED chip can be circle, and positive electrode 31 is symmetrical with respect to the center line A of isolated area 32 with negative electrode 33.

In the possible implementation of another kind, as shown in Fig. 4 a, the positive electrode 411 and the negative electrode 431 that cover brilliant LED chip can be triangle, and positive electrode 411 is symmetrical with respect to the center line A of isolated area 421 with negative electrode 431.

In the possible implementation of another kind, as shown in Figure 4 b, the positive electrode 412 and the negative electrode 432 that cover brilliant LED chip can be fillet triangle, this fillet triangle can be as shown in Figure 4 b only two angles be fillet.And positive electrode 412 is symmetrical with respect to the center line A of isolated area 422 with negative electrode 432.

In the possible implementation of another kind, as shown in Figure 5, the positive electrode 51 and the negative electrode 53 that cover brilliant LED chip can be irregular polygon, and positive electrode 51 can be not symmetrical with respect to the center line A of isolated area 52 with negative electrode 53.

Preferably, the width L of the isolated area of the utility model embodiment in described horizontal direction can be and be equal to or greater than 0.05mm, can guarantee like this to there will not be positive electrode and negative electrode to stride across the situation that isolated area electrically conducts in chip package process.

In a kind of possible implementation, the substrate that covers brilliant LED chip of the utility model embodiment is square.In this case, due to the diagonal setting of isolated area along chip, positive electrode and negative electrode are placed in respectively this diagonal both sides, make to use the automatic die bond machine of traditional LED to produce this and cover brilliant LED chip.

It should be noted that, although using square, pentagon, circle, triangle, fillet triangle, as example, introduced the shape of positive electrode and negative electrode, those skilled in the art will be understood that the utility model embodiment is not limited to this, and positive electrode and negative electrode can be arbitrary polygon or circle.And positive electrode and negative electrode can be symmetrical with respect to the center line of isolated area, can be not symmetrical yet, as long as positive electrode and negative electrode are placed in respectively the both sides of isolated area.

Fig. 6 is according to the sectional axonometric drawing of the crystal covering type LED chip of the utility model embodiment, wherein, this profile can be the sectional axonometric drawing along the direction vertical with dotted line A according to any one crystal covering type LED chip shown in Fig. 1 to Fig. 3, Fig. 4 a, Fig. 4 b and Fig. 5.As shown in Figure 6, this crystal covering type LED chip comprises: substrate 10, be formed at successively the first conductive-type semiconductor layer 20, luminescent layer 30, the second conductive-type semiconductor layer 40 and separator 50 on the front of substrate 10.This crystal covering type LED chip also comprises positive electrode 80 and the negative electrode 90 that is formed on separator 50 fronts.

The first conductive-type semiconductor layer 20 of this crystal covering type LED chip can adopt N-shaped gallium nitride to make, and the second conductive-type semiconductor layer 40 can adopt p-type gallium nitride layer to make.And in this crystal covering type LED chip, the one side away from luminescent layer 30 of p-type gallium nitride layer 40 is called to front, the one side of the more close luminescent layer 30 of p-type gallium nitride layer 40 is called to the back side, and remaining four faces of p-type gallium nitride layer 40 are all called to side.The one side of the more close luminescent layer 30 of N-shaped gallium nitride layer 20 is called to front, the one side of the more close substrate 10 of N-shaped gallium nitride layer 20 is called to the back side, and remaining four faces of N-shaped gallium nitride layer 20 are all called to side.The one side of the more close p-type gallium nitride layer 40 of luminescent layer 30 is called to front, the one side of the more close N-shaped gallium nitride layer 20 of luminescent layer 30 is called to the back side, the remaining face of luminescent layer 30 is all called to side.

In a kind of possible implementation, positive electrode 80 can be in electrical contact by running through through hole and the p-type gallium nitride layer 40 of separator 50, and negative electrode 90 can be in electrical contact by running through through hole and the N-shaped gallium nitride layer 20 of separator 50, p-type gallium nitride layer 40 and luminescent layer 30.And the part that separator 50 exposes is the isolated area shown in Fig. 1 to Fig. 3, Fig. 4 a, Fig. 4 b and Fig. 5.

In a kind of possible implementation, separator 50 can be SiO2, DBR(Distributed Bragg Reflection, distributed bragg reflector mirror), photon crystal structure, SiNx(silicon nitride), AlOx (aluminium oxide) and AlN(aluminium nitride) in any one, and this separator 50 can also be positioned at the side of crystal covering type LED chip, and can on the hole wall of through hole that runs through separator 50, p-type gallium nitride layer 40 and luminescent layer 30, be formed with similar insolated layer materials, to prevent electrically conducting of positive electrode 80 and negative electrode 90.

In addition,, in the crystal covering type LED chip of the utility model embodiment, positive electrode 80 and negative electrode 90 can be by ITO(nano indium tin metal oxides) and aluminum make.And in order to prevent anodizing, on the front of positive electrode 80 and/or negative electrode 90, also can be formed with protective layer (not shown).This protective layer can be by sheet metal a kind of the making in titanium, nickel, chromium, silver and gold copper-base alloy for example, and its thickness is

in time, can be used by tin cream or elargol welding.

Fig. 7 is the preparation method's of the crystal covering type LED chip shown in Fig. 6 flow chart, shown in Fig. 8 a～Fig. 8 c, is described in detail as follows.As shown in Figure 7, the preparation method of this crystal covering type LED chip comprises:

Step S1, for the LED epitaxial wafer that stacks gradually the first conductive-type semiconductor layer 20, luminescent layer 30 and the second conductive-type semiconductor layer 40 on substrate 10, can be by the etching mode of for example dry type or wet type, utilize first mask etching the second conductive-type semiconductor layer 40 and luminescent layer 30 to expose the first conductive-type semiconductor layer 20, form the structure that includes at least one the first through hole 70 in the second conductive-type semiconductor layer 40 and luminescent layer 30 as shown in Figure 8 a.Wherein, the first through hole 70 is for following negative electrode is contacted with the first conductive-type semiconductor layer 20, and preferred distributed layout as shown in Figure 8 a, and the first through hole 70 is evenly distributed as far as possible.

In a kind of possible implementation, substrate 10 can be specially the various substrates with different crystal orientations, for example sapphire, silicon or silicon carbide substrate.

In addition, the material of the first conductive-type semiconductor layer 20 can be N-shaped gallium nitride, can be also N-shaped AlGaInP (AlGaInP).The material of the second conductive-type semiconductor layer 40 can be p-type gallium nitride, can be also p-type AlGaInP.In a kind of possible implementation, the first conductive-type semiconductor layer 20 and the second conductive-type semiconductor layer 40 can adopt respectively N-shaped gallium nitride and p-type gallium nitride to make.

Step S2, on the sidewall of the first through hole 70 and the second conductive-type semiconductor layer 40, cover can be in SiO2, TiO2, SiNx, Ta2O5, MgF2, ZnS by individual layer or multilayer such as silicon dioxide (SiO2), DBR(any one make), AlOx (aluminium oxide), AlN(aluminium nitride) or the insulating material of the high reflectance such as photon crystal structure as separator 50, wherein separator 50 must expose the first conductive-type semiconductor layer 20 that is positioned at the first through hole 70 bottoms, thereby forms the structure that the first through hole 70 as shown in Figure 8 b extends through separator 50.Wherein, separator 50 is own non-conductive, plays the effect of insulation isolation, and in addition, separator 50 can also reverberation.

Step S3, on separator 50, can utilize the second mask to carry out etching to expose the second conductive-type semiconductor layer 40 by the etching mode of dry type for example or wet type, forms the structure that also includes a plurality of the second through holes 60 in separator 50 as shown in Figure 8 c.Wherein, the second through hole 60 is by for making following positive electrode contact with the second conductive-type semiconductor layer 40.

In a kind of possible implementation, the distribution of the second through hole 60 and the first through hole 70 can be as shown in Fig. 9 a, the distance of 60 to first through holes 70 of at least part of the second through hole is consistent, make in the LED chip of finally making that the positive electrode that forms via these through holes and the distance between negative electrode are consistent and to flow through the resistance that the electric current of this part positive electrode and negative electrode experiences consistent, thereby can effectively improve current density and send out a uniformity of light.

Step S4, forms and is connected to the negative electrode 90 of the first conductive-type semiconductor layer 20 and the positive electrode 80 that is connected to the second conductive-type semiconductor layer 40 via the second through hole 60 via the first through hole 70.

In a kind of possible implementation, in above-mentioned steps S4, in order to form the operation of positive electrode and negative electrode, can comprise bottom electrode making step, isolation step and surface electrode making step, wherein:

In bottom electrode making step, utilize electrode material to fill each the first through hole 70 and each second through hole 60, make the respectively electrode material of first through hole 70 that is arranged in predetermined negative electrode region via lead-in wire, be connected to the electrode material of the first through hole 70 that is arranged in predetermined positive electrode region, and make the electrode material of filling each second through hole 60 avoid each first through hole 70 and go between interconnecting, thereby form the bottom electrode of plan structure as shown in Fig. 9 a.In the bottom electrode schematic diagram as shown in Fig. 9 a, take scheme in the chip diagonal shown in dotted line A be boundary, region, the upper right corner is so-called predetermined negative electrode region, region, the lower left corner is so-called predetermined positive electrode region.

In isolation step, covering insulating material on the front of separator 50 at least, and the separator that utilizes the 3rd mask to be coated with insulating material to this carries out etching, to expose at positive electrode region, fill the electrode material of each first through hole 70, at negative electrode region, at least expose electrode material and the coupling part thereof of filling each second through hole 60, thereby form the plan structure as shown in Fig. 9 b.

In surface electrode making step, at least in the positive covered by electrode material of positive electrode region to complete positive electrode 80, and at least in the positive covered by electrode material of negative electrode region to complete negative electrode 90.The shape of positive electrode 80 and negative electrode 90 can arrange shown in Fig. 3, Fig. 4 a, Fig. 4 b and Fig. 5.Take the LED chip shown in Fig. 4 a as example, and the shape of positive electrode and negative electrode is triangle, and positive electrode and negative electrode symmetrical with respect to dotted line A in Fig. 9 b.Between positive electrode and negative electrode, there is the isolated area being formed by separator, to guarantee that both electrically do not contact.

Like this, because positive electrode and negative electrode are divided into cornerwise both sides in this LED chip front across isolated area, it is too many that the front face area of two electrodes is unlikely to differ.In when encapsulation, especially when covering crystal type encapsulation, conducting metal can be not just o'clock to two electrodes and be of moderate size, thereby prevented the phenomenon that occurs that conducting metal overflows, further improved the yield of product.

In addition,, in a kind of possible implementation, also can form protective layer on one of at least at positive electrode and negative electrode.Described protective layer can be in the metal materials such as titanium, nickel, chromium, silver and gold any one make, its thickness is in time, can be used by tin cream or elargol welding.

In a kind of possible implementation; at surface electrode, form in step; also make high insulating material such as silicon dioxide (SiO2) etc. as the coated whole LED chip of insulating protective layer; only expose positive electrode and negative electrode, to avoid in the installation process of this LED chip, especially covering in brilliant installation because conduction affects yield.In addition; because silicon dioxide is the material that a kind of hardness ratio is harder; the internal stress of generation when using wolfram steel cutter to carry out splitting in separated sliver process very likely; make the silicon dioxide layer of protection of the LED chip split occur that film splits, and then make to infiltrate in element in order to the material of bonding light-emitting component and substrate.In this case, while using wolfram steel cutter to carry out splitting, on the LED chip surface of being split, be coated with last layer flexible material in sliver process, can effectively offset the internal stress that wolfram steel cutter causes when splitting, thereby can prevent that silicon dioxide layer of protection film from splitting.

Like this, by the positive electrode of crystal covering type LED chip and negative electrode are designed to cornerwise both sides at crystal covering type LED chip, according to the crystal covering type LED chip of the utility model above-described embodiment, can when using the automatic die bond machine of traditional LED to produce, avoid the conducting of positive electrode and negative electrode, thereby improve the encapsulation yield of crystal covering type LED chip.

The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion by the described protection range with claim.

Claims

1. a crystal covering type LED chip, is characterized in that, comprising:

Substrate; And

Along continuous straight runs is successively set on positive electrode, isolated area and the negative electrode on the front of described substrate,

Wherein, described horizontal direction is the direction parallel with the front of described substrate,

The upright projection of described isolated area on the front of described substrate be at described positive electrode and described negative electrode between the upright projection on the front at described substrate,

The upright projection of a diagonal of the center line of described isolated area in described horizontal direction and described crystal covering type LED chip on the front of described substrate is overlapped.

2. crystal covering type LED chip according to claim 1, is characterized in that, described substrate is square.

3. crystal covering type LED chip according to claim 2, is characterized in that, the minimum widith of described isolated area in described horizontal direction is greater than 0.05mm.

4. crystal covering type LED chip according to claim 3, is characterized in that, described positive electrode be shaped as polygon or circle, described negative electrode be shaped as polygon or circle.

5. according to the crystal covering type LED chip described in any one in claim 1 to 4, it is characterized in that, also comprise:

The first conductive-type semiconductor layer, is positioned at the front of described substrate;

Luminescent layer, is positioned at the front of described the first conductive-type semiconductor layer;

The second conductive-type semiconductor layer, is positioned at the front of described luminescent layer; And

Separator, is positioned at the front of described the second conductive-type semiconductor layer;

Wherein, described negative electrode is positioned at the front of described separator, and described positive electrode is positioned at the front of described separator, and the part that described separator exposes is described isolated area,

Described positive electrode is in electrical contact by running through through hole and described second conductive-type semiconductor layer of described separator, and described negative electrode is in electrical contact by running through through hole and described first conductive-type semiconductor layer of described separator, described the second conductive-type semiconductor layer and described luminescent layer.

6. crystal covering type LED chip according to claim 5, is characterized in that, described separator is also positioned at the side of described crystal covering type LED chip.

7. crystal covering type LED chip according to claim 6, is characterized in that, described separator is any one in SiO2, DBR, photon crystal structure, SiNx, AlOx and AlN.

8. crystal covering type LED chip according to claim 7, is characterized in that, also comprises:

Protective layer, is positioned at the front of described negative electrode and/or the front of described positive electrode.

9. crystal covering type LED chip according to claim 8, is characterized in that, described protective layer is any one in titanium, nickel, chromium, silver and gold copper-base alloy.

10. crystal covering type LED chip according to claim 9, is characterized in that, the thickness of described protective layer is