CN107768500A - A kind of LED support and its luminescent device - Google Patents
A kind of LED support and its luminescent device Download PDFInfo
- Publication number
- CN107768500A CN107768500A CN201710889073.4A CN201710889073A CN107768500A CN 107768500 A CN107768500 A CN 107768500A CN 201710889073 A CN201710889073 A CN 201710889073A CN 107768500 A CN107768500 A CN 107768500A
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- Prior art keywords
- conductive
- chip
- flip
- heat
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 64
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000000565 sealant Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 239000012815 thermoplastic material Substances 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 229920002521 macromolecule Polymers 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 206010023126 Jaundice Diseases 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Abstract
The present invention provides a kind of LED support for being used to encapsulate flip-chip, including conductive and heat-conductive basic unit, the conductive and heat-conductive basic unit are divided into positive pole plate and negative pole plate；The conductive and heat-conductive basic unit be used for and the chip connection surface that is connected of encapsulation chip is provided with nonmetallic non-conductive reflector layer in the external world, other surfaces；Nonmetallic non-conductive reflectorized material block is provided between the positive pole plate and negative pole plate.By said structure, contact of the scaling powder with metallic reflective layer is avoided, so that the problem of greatly improving reliability and the brightness decline that welding assisted agent residuals silver coating is brought；And it is more than the thickness of nonmetallic non-conductive reflectorized material block 32 expansion at 25 DEG C~300 DEG C by the distance between the top surface of nonmetallic non-conductive reflector block and bottom surface of flip-chip 1, improve the chip electrical leakage problems caused by the thermal expansion of nonmetallic non-conductive reflector layer.
Description
Technical field
The present invention relates to the technical field of flip-chip, more particularly to a kind of LED support and its luminescent device.
Background technology
MD LED ripe development has greatly promoted LED popularization, and the SMD overwhelming majority is based on positive cartridge chip at present.
Cartridge chip is without gold thread, thermal resistance is low, can super-large current driving, there is higher reliability, but the technical threshold of flip-chip is high,
Price restricts its popularization.Recently as the gradual maturation of flip chip technology (fct), the SMD products of flip-chip, which are increasingly becoming, to be ground
The hot topic studied carefully.
Flip-chip is combined with the main of LED support by tin cream backflow or conductive silver glue, and conductive silver glue heat resistance is poor
Using more limiting to, tin cream backflow is current main way.But current problems, such as electric leakage and silver-colored reflector layer jaundice hair
It is black, hinder the mass application of upside-down mounting SMD products.Residual is that silver-colored reflector layer jaundice blacks after scaling powder backflow in tin cream
Main cause.After the reason for causing electric leakage has many-side, timbering material heated wherein on the one hand extruding of the expansion to chip is.
The content of the invention
The invention aims to overcome the deficiencies in the prior art, there is provided a kind of LED support, it can be used for flip-chip
Encapsulation, improve the reliability of Flip-Chip Using.
It is a further object to provide a kind of LED.
In order to achieve the above object, the present invention uses following technical scheme：
A kind of LED support for being used to encapsulate flip-chip, including conductive and heat-conductive basic unit, the conductive and heat-conductive basic unit are divided into
Positive pole plate and negative pole plate；Being used for for the conductive and heat-conductive basic unit is sudden and violent with the encapsulation chip chip connection surface being connected
The external world is exposed at, nonmetallic non-conductive reflector layer is provided with other surfaces；Set between the positive pole plate and negative pole plate
There is nonmetallic non-conductive reflectorized material block.
Preferably, the conductive and heat-conductive basic unit includes metal base, metal level, for connecting with the flip-chip successively
The metallic reflective layer connect.
Preferably, the nonmetallic non-conductive reflector layer and the nonmetallic non-conductive reflectorized material block are all heat curing-type
The mixing material that material or thermoplastic materials or thermoset material mix with thermoplastic materials' combined material.
Preferably, the material of the metallic reflective layer is at least made up of a kind of material in Au or Ag；
Or/and the material of the metal level is at least made up of one or more materials in Ni, Cu, Pd, Cr.
Preferably, the nonmetallic non-conductive reflector layer in the sidepiece connection surface of the conductive and heat-conductive basic unit up extends
With the top surface connection surface forming layer chamber positioned at the conductive and heat-conductive basic unit.
A kind of LED, including the LED support described in claim 1 to claim 5 any claim, also
Including flip-chip；The flip-chip is connected by metal connecting layer with the connection surface of the conductive and heat-conductive basic unit, even
Connect and sealant is set on the LED support after flip-chip；The flip-chip is crossed on positive pole plate and negative pole plate.
Preferably, arbitrarily take in a longitudinal section for including metallic reflective layer and flip-chip, the metallic reflective layer
Width be no more than 1.2 times of width of flip-chip.
Preferably, the top surface of the nonmetallic non-conductive reflector block and the distance between the bottom surface of the flip-chip are big
In the thickness of nonmetallic non-conductive reflectorized material block expansion at 25 DEG C~300 DEG C.
Preferably, the material of the sealant includes the mixed of macromolecule resin or macromolecule resin and fluorescence transition material
Condensation material.
Preferably, the material of the metal connecting layer includes Sn and its alloy.
Compared with prior art, the invention has the advantages that：
By said structure, contact of the scaling powder with metallic reflective layer is avoided, so as to greatly improve welding assisted agent residuals plating
The problem of reliability and brightness that silver layer is brought decline；And the top surface and flip-chip 1 for passing through nonmetallic non-conductive reflector block
The distance between bottom surface is more than the thickness of nonmetallic non-conductive reflectorized material block 32 expansion at 25 DEG C~300 DEG C, improves because non-
Chip electrical leakage problems caused by the thermal expansion of the non-conductive reflector layer of metal.
Brief description of the drawings
Fig. 1 is the side structure schematic diagram of LED of the present invention；
Fig. 2 is the structural representation of LED of the present invention；
Fig. 3 is the structural representation of embodiments of the invention 2；
Fig. 4 is the structural representation of embodiments of the invention 3.
In figure：
1-flip-chip；21-metallic reflective layer；22-metal level；23-Copper base material；31-nonmetallic non-conductive reflective
Layer；32-nonmetallic non-conductive reflectorized material block；4-sealant.
In conjunction with accompanying drawing, the invention will be further described with specific embodiment.
Embodiment
As shown in fig.1, a kind of LED support for being used to encapsulate flip-chip of the present invention, including conductive and heat-conductive base
Layer, conductive and heat-conductive basic unit are divided into positive pole plate and negative pole plate.Positive pole plate and the area ratio of the cross section of negative pole plate are
1:1, or other ratios.
The surface of electroconductive electric heating basic unit is made up of chip connection surface, sidepiece connection surface, top surface connection surface and bottom surface.
The connection surface that conductive and heat-conductive basic unit is connected with encapsulation chip is exposed to the external world, and sidepiece connection surface and top surface connection surface are all
It is provided with nonmetallic non-conductive reflector layer 31；Nonmetallic non-conductive reflectorized material block is provided between positive pole plate and negative pole plate
32.Nonmetallic non-conductive reflector layer 31 in the sidepiece connection surface of conductive and heat-conductive basic unit up extends and is located at conductive and heat-conductive base
The top surface connection surface forming layer chamber of layer.
It is anti-that conductive and heat-conductive basic unit includes metal base, metal level 22, the metal for being connected with the flip-chip 1 successively
Photosphere 21.The material of metallic reflective layer 21 is at least made up of a kind of material in Au or Ag；The material of metal level 22 at least by Ni,
One or more materials composition in Cu, Pd, Cr.Metal base is Copper base material 23.
Nonmetallic non-conductive reflector layer 31 and nonmetallic non-conductive reflectorized material block 32 are all thermoset material or thermoplastics type
The mixing material that material or thermoset material mix with thermoplastic materials' combined material.
A kind of LED of the present invention, including LED support of the present invention, in addition to flip-chip 1；
Flip-chip 1 is connected by metal connecting layer with the connection surface of conductive and heat-conductive basic unit, flip-chip 1 be crossed on positive pole plate with
On negative pole plate.The material of metal connecting layer includes Sn and its alloy；Arbitrarily taking one includes metallic reflective layer and flip-chip
Longitudinal section in, the width of metallic reflective layer is no more than 1.2 times of the width of flip-chip 1.
Sealant 4 is set in the layer chamber on the LED support being connected with after flip-chip 1；The material of sealant 4 includes height
The mixing material of molecule resin or macromolecule resin and fluorescence transition material.The top surface of nonmetallic non-conductive reflector block and upside-down mounting core
The distance between bottom surface of piece 1 is more than the thickness of nonmetallic non-conductive reflectorized material block 32 expansion at 25 DEG C~300 DEG C.
The preparation method of LED of the present invention is as follows；Metal connecting layer is coated first in metallic reflective layer
21, then LED upside-down mountings are attached to metal connecting layer, then high temperature reflux makes metal connecting layer be connected with LED flip chip 1, in LED
Coating sealant 4, obtains the LED luminescent layers in support after being heating and curing.
Embodiment 1
LED described in the present embodiment, including a LED support, a flip-chip 1, for connect LED support with
Metal connecting layer between flip-chip 1 and the sealant 4 for being covered in the top of flip-chip 1.
LED support, including Copper base material, the metal level 22 in Copper base material, the metallic reflective layer 21 on metal level 22.Copper
Base material, metal level 22 and metallic reflective layer 21 form conductive and heat-conductive basic unit；Conductive and heat-conductive basic unit is divided into positive pole plate and negative pole
Plate.The connection surface (i.e. metallic reflective layer 21 and the metal connecting layer that are used to be connected with encapsulation chip of conductive and heat-conductive basic unit
The surface of connection) external world is exposed to, it is provided with nonmetallic non-conductive reflector layer 31 in remaining surface；Positive pole plate and negative pole plate
Between be provided with nonmetallic non-conductive reflectorized material block 32.
Flip-chip 1 is connected by metal connecting layer with the connection surface of conductive and heat-conductive basic unit, and flip-chip 1 is crossed on just
On pole plate block and negative pole plate.The distance between the top surface of nonmetallic non-conductive reflector block and bottom surface of flip-chip 1 are more than non-
The thickness of the non-conductive reflectorized material block of metal expansion at 25 DEG C~300 DEG C.Set on the LED support after connecting flip-chip-on 1
Put sealant 4.
Positive pole plate and the area ratio of the cross section of negative pole plate are 1:1.Metal connecting layer is SnAgCu alloys, metal level
22 be Ni layers.Nonmetallic non-conductive reflector layer 31 and nonmetallic non-conductive reflectorized material block are by EMC (by silica and asphalt mixtures modified by epoxy resin
Fat is formed) material composition.Sealant 4 uniformly mixes solidify afterwards with LED fluorescent powder by silica gel and formed.The width of metallic reflective layer 21 surpasses
Cross 1.1 times of the chip length of side.
Embodiment 2
The present embodiment and the difference of embodiment 1 are following structure：
Positive pole plate and the area ratio of the cross section of negative pole plate are not 1:1.Metal connecting layer is SnSb alloys, metal level
22 be Cu layers.Nonmetallic non-conductive reflector layer 31 and nonmetallic non-conductive reflectorized material block are by PCT (Poly1,4-
Cyclohexylene dimethylene terephthalate) material composition.Sealant 4 is formed by silica gel solidification.Arbitrarily take
In one longitudinal section for including metallic reflective layer and flip-chip, the width of metallic reflective layer is no more than the width of flip-chip 1
1.15 times.
Embodiment 3
The present embodiment and the difference of embodiment 2 are following structure：
Conductive and heat-conductive basic unit is divided into positive pole plate and each three pieces of negative pole plate, passes through centre between three pieces of flip-chips 1
Plate is cascaded.Metal connecting layer is SnAu alloys, and metal level 22 is made up of two layerings, respectively Cu layers and Ni layers.
Nonmetallic non-conductive reflector layer 31 and nonmetallic non-conductive reflectorized material block are made up of PPA (polyphthalamide) material.Appoint
Meaning is taken in a longitudinal section for including metallic reflective layer and flip-chip, and the width of metallic reflective layer is no more than flip-chip 1
Width it is identical.
The invention is not limited in above-mentioned embodiment, if not departing from the present invention to the various changes or modifications of the present invention
Spirit and scope, if these changes and modification belong within the scope of the claim and equivalent technologies of the present invention, then this hair
It is bright to be also intended to comprising these changes and change.
Claims (10)
- A kind of 1. LED support for being used to encapsulate flip-chip, it is characterised in that including conductive and heat-conductive basic unit, the conductive and heat-conductive Basic unit is divided into positive pole plate and negative pole plate；The chip for being used to be connected with the encapsulation chip of the conductive and heat-conductive basic unit Connection surface is provided with nonmetallic non-conductive reflector layer in the external world, other surfaces；The positive pole plate and negative plate Nonmetallic non-conductive reflectorized material block is provided between block.
- 2. the LED support according to claim 1 for being used to encapsulate flip-chip, it is characterised in that the conductive and heat-conductive base Layer includes metal base, metal level, the metallic reflective layer for being connected with the flip-chip successively.
- 3. according to claim 1 be used to encapsulate the LED support of flip-chip, it is characterised in that described nonmetallic not lead Electric reflector layer and the nonmetallic non-conductive reflectorized material block be all thermoset material or thermoplastic materials or thermoset material with The mixing material that thermoplastic materials' combined material mixes.
- 4. the LED support according to claim 2 for being used to encapsulate flip-chip, it is characterised in that the metallic reflective layer Material be at least made up of a kind of material in Au or Ag；Or/and the material of the metal level is at least made up of one or more materials in Ni, Cu, Pd, Cr.
- 5. the LED support according to claim 1 for being used to encapsulate flip-chip, it is characterised in that the conductive and heat-conductive base Nonmetallic non-conductive reflector layer in the sidepiece connection surface of layer up extends to be connected with the top surface positioned at the conductive and heat-conductive basic unit Connect surface forming layer chamber.
- 6. a kind of LED, it is characterised in that including described in claim 1 to claim 5 any claim LED support, in addition to flip-chip；The flip-chip passes through metal connecting layer and the connection surface of the conductive and heat-conductive basic unit Connection, sealant is set on the LED support after connecting flip-chip-on；The flip-chip is crossed on positive pole plate and negative pole On plate.
- 7. LED according to claim 6, it is characterised in that any to take one including metallic reflective layer and fall In the longitudinal section of cartridge chip, the width of the metallic reflective layer is no more than 1.2 times of the width of flip-chip.
- 8. LED according to claim 6, it is characterised in that the top surface of the nonmetallic non-conductive reflector block The distance between bottom surface of the flip-chip is more than the nonmetallic non-conductive reflectorized material block in 25 DEG C~300 DEG C expansions Thickness.
- 9. LED according to claim 6, it is characterised in that the material of the sealant includes high score subtree The mixing material of fat or macromolecule resin and fluorescence transition material.
- 10. LED according to claim 6, it is characterised in that the material of the metal connecting layer include Sn and Its alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710889073.4A CN107768500A (en) | 2017-09-27 | 2017-09-27 | A kind of LED support and its luminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710889073.4A CN107768500A (en) | 2017-09-27 | 2017-09-27 | A kind of LED support and its luminescent device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107768500A true CN107768500A (en) | 2018-03-06 |
Family
ID=61266697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710889073.4A Pending CN107768500A (en) | 2017-09-27 | 2017-09-27 | A kind of LED support and its luminescent device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107768500A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830500A (en) * | 2019-02-03 | 2019-05-31 | 泉州三安半导体科技有限公司 | Light emitting device |
| CN112271246A (en) * | 2020-10-26 | 2021-01-26 | 江西瑞晟光电科技有限公司 | Novel LED lamp bead packaging method |
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| CN103794695A (en) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | Flip chip type light-emitting diode (LED) chip |
| CN204481050U (en) * | 2015-03-04 | 2015-07-15 | 尤俊龙 | New LED crystal covered chip |
| CN205666252U (en) * | 2016-04-13 | 2016-10-26 | 广东聚科照明股份有限公司 | Perpendicular electrically conductive horizontal insulating flip -chip LED |
| US20160322539A1 (en) * | 2013-12-18 | 2016-11-03 | Jiangyin Changdian Advanced Packaging Co.,Ltd | Led packaging structure |
| CN207834339U (en) * | 2017-09-27 | 2018-09-07 | 广东晶科电子股份有限公司 | A kind of LED support and its luminescent device |
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2017
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Patent Citations (6)
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|---|---|---|---|---|
| KR20060076159A (en) * | 2004-12-29 | 2006-07-04 | 인더스트리얼 테크놀로지 리써치 인스티튜트 | Light emitting diode package and process of making the same |
| US20160322539A1 (en) * | 2013-12-18 | 2016-11-03 | Jiangyin Changdian Advanced Packaging Co.,Ltd | Led packaging structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830500A (en) * | 2019-02-03 | 2019-05-31 | 泉州三安半导体科技有限公司 | Light emitting device |
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| CN112271246A (en) * | 2020-10-26 | 2021-01-26 | 江西瑞晟光电科技有限公司 | Novel LED lamp bead packaging method |
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Address after: 511458 33 Nansha District City Road South, Nansha District, Guangzhou, Guangdong Applicant after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 No. 33, South Ring Road, Nansha District, Guangzhou, Guangdong. Applicant before: GUANGDONG APT ELECTRONICS LTD. |