CN101159301A - Semiconductor luminescent device and mfg method thereof - Google Patents
Semiconductor luminescent device and mfg method thereof Download PDFInfo
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- CN101159301A CN101159301A CNA2007100302618A CN200710030261A CN101159301A CN 101159301 A CN101159301 A CN 101159301A CN A2007100302618 A CNA2007100302618 A CN A2007100302618A CN 200710030261 A CN200710030261 A CN 200710030261A CN 101159301 A CN101159301 A CN 101159301A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000004020 conductor Substances 0.000 claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000003475 lamination Methods 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011799 hole material Substances 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000000576 coating method Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910005855 NiOx Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
The invention discloses a semiconductor illuminating device, which comprises a substrate and a semiconductor extended laminated layer that is laminated on the substrate. The semiconductor extended laminated layer sequentially comprises, from bottom to top, an N-type layer, an illuminating layer, and a P-type layer. An electrode is equipped on the lower surface of the substrate. A P-type electrode is equipped on the upper surface of the P-type layer, wherein part of the P-type layer is etched into the N-type layer and equipped with an N-type electrode, meanwhile, a conductor is equipped in this part of the N-type layer, one end of the conductor is connected with the N-type electrode, and the other end of the conductor is contacted with the substrate. The conductor is composed of a cylindrical through-hole and conducting material in the through-hole. The conductor can also be extended to the bottom of the substrate and connected with the electrode on the lower surface of the substrate. The invention can effectively reduce the operating voltage and improves the output power of the semiconductor illuminating device. Furthermore, the invention also discloses a method of manufacturing the semiconductor illuminating device.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device and manufacture method thereof.
Background technology
The III-V hi-nitride semiconductor material is widely used in purple, indigo plant, green and white light emitting diode, the purple light laser of high-density optical storage usefulness, ultraviolet light detector, and high power high-frequency electron device.Yet owing to lack suitable substrate, high quality GaN sill film all is grown on sapphire or the SiC substrate usually at present, and expensive but these two kinds of substrates all compare, especially SiC, and size is smaller.In addition, sapphire also has shortcomings such as extreme hardness, non-conductive, poor heat conductivity.
For overcoming above-mentioned shortcoming, people explore aspect the substrate growing GaN all the time doing with Si, are expected at that heteroepitaxial growth III group-III nitride luminescent device has tangible technical advantage on the Si substrate aspect reducing cost.The advantage of making GaN based light-emitting diode (LED) substrate with Si is that mainly the manufacturing cost of LED will reduce greatly, this is not only because the price of Si substrate itself is cheaply more a lot of than the sapphire and the SiC substrate that use at present, and can use than the bigger Si substrate of the size of sapphire and SiC substrate improving metal organic chemical vapor deposition (MOCVD) usage ratio of equipment, thereby improve the productive rate of chip.Si is the same with the SiC substrate, also be conductive substrates, electrode can from chip draw the formation vertical conductive structure up and down, be different from the side direction structure that the such electrode of Sapphire Substrate of insulation must all be drawn from the same side, so not only chip area can be effectively utilized, encapsulation process can also be simplified.Can use simultaneously technology ripe in the processing of Si integrated circuit to make led chip, save the chip production cost.
Yet compare with SiC with sapphire, growing GaN is more difficult on the Si substrate, and this is because thermal mismatching and lattice mismatch between Si and the GaN material are bigger.The difference of thermal expansion coefficients of Si and GaN will cause the GaN film be full of cracks to occur, and big lattice mismatch can cause high dislocation density in the GaN epitaxial loayer.Although the manufacturing technology of Si substrate GaN-based LED has obtained many infusive results, but still there is the defective that operating voltage is higher and power output is lower, be because the thermal coefficient of expansion of Si and GaN exists big mismatch to cause the GaN film be full of cracks to occur on the one hand, lattice constant missionary society causes high dislocation density in the GaN epitaxial loayer, also there is serious extinction problem in the Si substrate, people are in order to solve be full of cracks, lattice does not match and the extinction problem, usually introduce various resilient coatings (as AlN/GaN) and insert layer (as solving the DBR reflector that the extinction problem is introduced), but the introducing meeting of these external layers additionally increases the operating voltage of device; On the other hand, in the GaN based LED construction, have between Si and the GaN and bigger can be with discontinuity and cut-in voltage is raise, and the crystal perfection difference causes P type GaN doping efficiency low, cause series resistance to increase.Solving the high problem of Si substrate GaN-based LED chip operating voltage, is the key that the Si substrate GaN-based LED moves towards practicability.
Summary of the invention
The purpose of this invention is to provide a kind of light emitting semiconductor device and manufacture method thereof that can effectively reduce operating voltage.
To achieve these goals, the present invention adopts following technical scheme:
A kind of light emitting semiconductor device, it comprises substrate and is laminated in semiconductor epitaxial lamination on the substrate that this semiconductor epitaxial lamination comprises N type layer, luminescent layer and P type layer from lower to upper successively.Lower surface at substrate is provided with an electrode.Upper surface at P type layer is provided with P type electrode, and wherein, part P type layer is etched into N type layer, and is provided with N type electrode, is provided with an electric conductor simultaneously in the N type layer of this zone, and the one end is connected with N type electrode, and the other end and substrate electrically contact.
This electric conductor is made of a column through hole and the conductive materials that is filled in the through hole.
This through hole is column through holes such as cross section is rounded or square.
This electric conductor also may extend to the substrate bottom, and is connected with the electrode of substrate lower surface.
The size of described semiconductor epitaxial lamination or through hole and the degree of depth can specifically be set according to the practical operation situation.
For solve semiconductor epitaxial lamination be full of cracks or with the unmatched problem of substrate lattice, also be provided with resilient coating between semiconductor epitaxial lamination and the substrate.
In order to solve the extinction problem of substrate, also be provided with the DBR reflector between this resilient coating and the semiconductor epitaxial lamination.
Above-mentioned substrate is formed by the Si sill, and semiconductor epitaxial lamination and DBR reflector are by Al-Ca-In-N (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) material formation.
In order to make the conductive materials of filling and contacting fully of N type layer sidewall and Si substrate, the filler of column through hole can be any electric conducting materials such as various metal or alloy or electroconductive resin, also can be the combination in any of above-mentioned material simultaneously.
In addition, the present invention also provides a kind of manufacture method of light emitting semiconductor device, and its step comprises: deposited semiconductor extension lamination on the Si substrate, this semiconductor epitaxial lamination comprise N type layer, luminescent layer and P type layer from lower to upper successively; By dry etching part P type layer is etched into N type layer, etching one zone in the N type layer that exposes forms an electric conductor in this zone, and electric conductor one end exposes N type laminar surface, and the other end and Si substrate electrically contact; Utilize photoetching process, definition N type electrode zone on the electric conductor top, and on this zone evaporation N type electrode; At the upper surface definition P of P type layer type electrode zone, and,, form electrode in the lower surface evaporated metal layer of Si substrate at this zone formation P type electrode.
This electric conductor can form through hole and the conductive materials that is filled in the through hole forms by etching in N type layer.
Above-mentioned through hole also can be etched to the Si substrate interior or to Si substrate bottom, and contacts with the electrode that lower surface forms of substrate.
Light emitting semiconductor device of the present invention and column through hole that manufacture method provided thereof are through whole semiconductor epitaxial lamination, and partly or entirely etching is worn substrate, behind this column through hole filled conductive material, N type layer contacts by the electrode of conductive materials with Si substrate or Si substrate lower end.During work, behind the electric current of the P type of the flowing through electrode process N type layer, most of conductive materials that can pass through low-resistance is to the Si substrate flow, and small part directly flows to the Si substrate through N type layer.On the one hand, the electric interconnected of N type layer and Si substrate reduced traditional Si substrate semiconductor luminescent device chip because the high working voltage excessively that additional layer and Si and semiconductor epitaxial lamination potential barrier are introduced; On the other hand, for the light emitting semiconductor device chip of Sapphire Substrate, because one part of current can directly flow to the Si substrate by N type layer, like this, part has been eliminated the current blockade effect in the Sapphire Substrate chip that insulate.
Therefore, the present invention can significantly reduce the operating voltage of light emitting semiconductor device, can improve the current expansion effect again, and the good thermal conductivity of Si substrate can improve the hot property of device.Simultaneously, this is simple for process, can not increase too much chip manufacturing cost.
Description of drawings
Fig. 1 is the structural representation of the light emitting semiconductor device of the embodiment of the invention 1.
Fig. 2 is the structural representation of the light emitting semiconductor device of the embodiment of the invention 2.
Fig. 3 is the structural representation of the light emitting semiconductor device of the embodiment of the invention 3.
Among the above-mentioned figure, 1 is substrate, and 3 is conductive materials, and 4 is P type layer, and 5 is luminescent layer, 6 is N type layer, and 7 is resilient coating, and 8 is transparent conductive film, and 9 is P type electrode, 10 is the electrode of substrate lower surface, and 11 is the N type electrode of via top, and 12 is the DBR reflector, and 13 is the column through hole.
Embodiment
With reference to Fig. 1, a kind of light emitting semiconductor device, it comprises substrate 1 and is laminated in semiconductor epitaxial lamination on the substrate 1, this semiconductor epitaxial lamination comprises N type layer 6, luminescent layer 5 and P type layer 4 from lower to upper successively, the upper surface of this P type layer 4 is formed with layer of transparent conductive film 8, transparent conductive film 8 is provided with P type electrode 9, the lower surface of this substrate 1 is provided with electrode 10, wherein, be provided with an electric conductor in the N type layer 6, the one end exposes N type layer 6, and is provided with a N type electrode 11, and its other end and substrate 1 electrically contact.
This electric conductor is made of a column through hole 13 and the conductive materials 3 that are filled in the through hole 13.This through hole 13 is the rounded or square column through hole of cross section.
In order to make the conductive materials 3 of filling and contacting fully of N type layer 6 sidewall and substrate 1, the conductive materials 3 that column through hole 13 is filled can be various metal or alloy, as Au, Ag, Al, Ti, Ni, Cu, ITO, Pt, AuSb etc., also any electric conducting materials such as electroconductive resin can be, also the combination in any of above-mentioned material can be simultaneously.In order to prevent that device is short-circuited, must leave the certain intervals space between conductive materials 3 and the P type layer 4.
Above-mentioned substrate 1 is formed by the Si sill, and the semiconductor epitaxial lamination is by Al-Ca-In-N (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) material formation.
For solve semiconductor epitaxial lamination be full of cracks or with the unmatched problem of substrate 1 lattice, also be provided with a resilient coating 7 between semiconductor epitaxial lamination and the substrate 1.
This fabricating method of semiconductor light-emitting device may further comprise the steps:
After the semiconductor epitaxial stack deposition is finished, by dry etching, the zone shown in Fig. 1 is carved divided by formation one zone, and form an electric conductor in this zone, an end of electric conductor exposes N type layer 6 surface, and the other end and Si substrate 1 electrically contact.
Column through hole 13 that above-mentioned electric conductor is formed by etching in N type layer 6 and the conductive materials 3 that is filled in the through hole 13 form.This column through hole 13 passes the semiconductor epitaxial lamination, up to contact Si substrate 1, then through hole 13 outer peripheral areas are etched into N type layer 6 exposing the surface of N type layer 6, and use magnetron sputtering or electroplating technology depositing electrically conductive material 3 in through hole 13, with filling vias 13.
Adopt photoetching process, definition N type electrode zone on the N type layer table top at place, through hole 13 top, evaporation N type electrode 11, annealing forms ohmic contact, makes that N type layer 6 and Si substrate 1 are interconnected by conductive materials 3.
Adopt photoetching process, the upper surface definition p type island region territory at P type layer 4 forms transparent conductive film 8 at the p type island region field surface; Definition P type electrode zone on transparent conductive film 8, and evaporation forms P type electrode 9 on P type electrode zone; In Si substrate lower surface evaporated metal layer, form electrode 10.
With the cutting of semiconductor epitaxial lamination, form independently light emitting semiconductor device chip.
In the present embodiment, transparent conductive film 8 can adopt nickel billon oxide (Oxidzed-Ni/Au), tin indium oxide (ITO), zinc oxide aluminum (AZO), zinc oxide, and their composition (as Ni/AZO, NiO/AZO, Ni/ZnO, NiO/ZnO etc.).
Wherein, Ni/Au utilizes electron beam evaporation plating (E-gun Evaporator) to carry out evaporation, and the thickness of evaporation is 50/100 ; After the metal evaporation, again Ni/Au is placed in the high temperature furnace, under oxygen atmosphere, carries out 550 ℃, 5 minutes heat treatment, to form the oxide of Ni/Au.
ITO utilizes electron beam evaporation plating machine (E-gun Evaporator) to deposit, and the thickness of deposition is 2000-10000 ; After the ITO deposition, again in the RTA system, under the nitrogen environment, the heat treatment of carrying out 600 ℃, 5 minutes is to form ohmic contact.
AZO utilizes ion sputtering machine (Sputter) to deposit, and deposit thickness is 2500 , in order to improve the ohmic contact characteristic of 4 on AZO and P type layer, distinguishes Ni, the NiOx of evaporation 50 earlier before deposition AZO on P type layer 4, carries out the deposition of AZO afterwards again.After having deposited, under nitrogen environment, carry out 800 ℃, 1 minute heat treatment with the RTA system.
Embodiment 2
As shown in Figure 2, present embodiment is similar to embodiment 1, its difference is: present embodiment is in order to reduce the internal resistance of substrate 1, when etching through hole 13, can all run through entire substrate 1, form the all-pass hole, and in through hole 13, being packed into conductive materials 3, N type layer 6 directly electrically contacts by conductive materials 3 realizations with the electrodes 10 of substrate 1 lower end.
Certainly, according in the practical application to the requirement difference of light emitting semiconductor device internal resistance, through hole 13 also can partly run through substrate 1.
Embodiment 3
As shown in Figure 3, present embodiment is similar to embodiment 1, its difference is: present embodiment is in order to improve the light extraction efficiency of light emitting semiconductor device, between substrate 1 and resilient coating 7, introduce Al-Ca-In-N (InxGayAl1-x-yN, 0＜=x＜=1,0＜=y＜=1) the DBR reflector 12 of material (typical structure is AlGaN/AlN etc.), through hole 13 structures at this moment need etching to pass DBR reflector 12 and resilient coating 7 arrival substrates 1 when dry etching.
Certainly, according in the practical application to the requirement difference of light emitting semiconductor device internal resistance, adopt and embodiment 2 similar methods, through hole 13 also can partly or entirely run through substrate 1.
Claims (10)
1. light emitting semiconductor device, it comprises substrate (1) and is laminated in semiconductor epitaxial lamination on the substrate (1), this semiconductor epitaxial lamination comprises N type layer (6) from lower to upper successively, luminescent layer (5) and P type layer (4), the lower surface of this substrate (1) is provided with electrode (10), the upper surface of this P type layer (4) is provided with P type electrode (9), wherein, part P type layer (4) is etched into N type layer (6), and be provided with N type electrode (11), it is characterized in that: in the zone that N type layer (6) exposes, be provided with an electric conductor, the one end is connected with N type electrode (11), and the other end and substrate (1) electrically contact.
2. light emitting semiconductor device as claimed in claim 1 is characterized in that: this electric conductor is by a column through hole (13) and be filled in interior conductive materials (3) formation of through hole (13).
3. light emitting semiconductor device as claimed in claim 2 is characterized in that: this through hole (13) is column through holes such as cross section is rounded or square.
4. light emitting semiconductor device as claimed in claim 2 is characterized in that: this conductive materials (3) is metal or alloy or electroconductive resin or their combination in any.
5. light emitting semiconductor device as claimed in claim 1 is characterized in that: this electric conductor extends to substrate (1) bottom, and is connected with the electrode (10) of substrate (1) lower surface.
6. as each described light emitting semiconductor device of claim 1 to 5, it is characterized in that: this substrate (1) is formed by the Si sill, and the semiconductor epitaxial lamination is by Al-Ca-In-N (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) material formation.
7. as each described light emitting semiconductor device of claim 1 to 5, it is characterized in that: also be provided with DBR reflector (12) between this substrate (1) and the semiconductor epitaxial lamination.
8. light emitting semiconductor device as claimed in claim 7 is characterized in that: this DBR reflector (12) is by Al-Ca-In-N (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) material formation.
9. the manufacture method of a light emitting semiconductor device, its step comprises:
A. go up the deposited semiconductor extension lamination at Si substrate (1), this semiconductor epitaxial lamination comprises N type layer (6), luminescent layer (5) and P type layer (4) from lower to upper successively;
B. by dry etching, part P type layer is etched into N type layer (6), and in the zone that N type layer (6) exposes etching one zone, formation one electric conductor in this zone, electric conductor one end exposes N type layer (6) surface, the other end and Si substrate (1) electrically contact;
C. utilize photoetching process, definition N type electrode zone on the electric conductor top, and on this zone evaporation N type electrode (11);
D. form P type electrode (9) at the upper surface definition P of P type layer (4) type electrode zone, and in this zone,, form electrode (10) in the lower surface evaporated metal layer of Si substrate (1).
10. the manufacture method of light emitting semiconductor device as claimed in claim 9, it is characterized in that: in the b step, this electric conductor is formed by the through hole (13) that forms of etching and the conductive materials (3) that is filled in the through hole (13) in the zone of exposing at N type layer (6), this through hole (13) passes the semiconductor epitaxial lamination, and contacts with Si substrate (1).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100302618A CN100544045C (en) | 2007-09-17 | 2007-09-17 | A kind of light emitting semiconductor device and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100302618A CN100544045C (en) | 2007-09-17 | 2007-09-17 | A kind of light emitting semiconductor device and manufacture method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101159301A true CN101159301A (en) | 2008-04-09 |
| CN100544045C CN100544045C (en) | 2009-09-23 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339913A (en) * | 2011-09-30 | 2012-02-01 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| CN102593291A (en) * | 2011-01-07 | 2012-07-18 | 山东华光光电子有限公司 | Nitride distributed Bragg reflector (DBR) and manufacturing method and application thereof |
| CN103579422A (en) * | 2013-11-19 | 2014-02-12 | 中国科学院半导体研究所 | Plant supplementary lighting light emitting diode manufacturing method |
| JP2017084919A (en) * | 2015-10-27 | 2017-05-18 | 株式会社ディスコ | Led substrate forming method |
| CN112289821A (en) * | 2016-04-14 | 2021-01-29 | 群创光电股份有限公司 | Display device |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002198560A (en) * | 2000-12-26 | 2002-07-12 | Sharp Corp | Semiconductor light emitting element and its manufacturing method |
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2007
- 2007-09-17 CN CNB2007100302618A patent/CN100544045C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593291A (en) * | 2011-01-07 | 2012-07-18 | 山东华光光电子有限公司 | Nitride distributed Bragg reflector (DBR) and manufacturing method and application thereof |
| CN102339913A (en) * | 2011-09-30 | 2012-02-01 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| CN102339913B (en) * | 2011-09-30 | 2013-06-19 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| CN103579422A (en) * | 2013-11-19 | 2014-02-12 | 中国科学院半导体研究所 | Plant supplementary lighting light emitting diode manufacturing method |
| JP2017084919A (en) * | 2015-10-27 | 2017-05-18 | 株式会社ディスコ | Led substrate forming method |
| CN112289821A (en) * | 2016-04-14 | 2021-01-29 | 群创光电股份有限公司 | Display device |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN114583026B (en) * | 2022-05-05 | 2022-11-29 | 徐州立羽高科技有限责任公司 | Semiconductor deep ultraviolet light source structure |
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|---|---|
| CN100544045C (en) | 2009-09-23 |
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