CN102386178A - High-voltage-driving LED light-emitting device and manufacturing method thereof - Google Patents
High-voltage-driving LED light-emitting device and manufacturing method thereof Download PDFInfo
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- CN102386178A CN102386178A CN2011104065834A CN201110406583A CN102386178A CN 102386178 A CN102386178 A CN 102386178A CN 2011104065834 A CN2011104065834 A CN 2011104065834A CN 201110406583 A CN201110406583 A CN 201110406583A CN 102386178 A CN102386178 A CN 102386178A
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Abstract
The invention belongs to the field of LED (light emitting diode) technology and particularly discloses a high-voltage-driving LED light-emitting device with an inverted structure and a manufacturing method thereof. The high voltage driving LED light-emitting device comprises a substrate and an LED chip invertedly installed on the substrate, wherein the LED chip comprises multiple discrete LED subunits, a circuit connecting layer is arranged on the LED chip so as to connect LED subunits in series, a heat conduction layer is also arranged on the LED chip, and a heat conduction pad corresponding to the position of the heat conduction layer is also arranged on the substrate. The realization of series connection among each subunit of the LED chip in the invention on the LED chip can make the areas of the heat conduction layer and the heat conduction pad larger, thus the heat dissipation effect can be further improved. The invertedly welded thermoelectricity separation structure adopted by the invention can rapidly transfer the heat of the LED, reduce the junction temperature of the LED and improve the service life of the LED. Meanwhile, the metal connecting layer arranged on the chip can make the wiring arrangement easier and improve the stability of the LED and the product production yield.
Description
Technical field
The invention belongs to the LED technical field, be specifically related to a kind of LED luminescent device and manufacturing approach thereof of high drive of inverted structure.
Background technology
Along with improving constantly of light-emitting diode (LED) luminous efficiency, LED became in recent years one of the most valued light source undoubtedly.Further along with the development of LED technology; Directly adopt the LED of high drive to realize that the efficient of high-voltage LED is superior to general conventional low light-emittingdiode, but mainly the little electric current of attribution, multiunit design can be come the electric current diffusion equably; And then lifting light extraction efficiency; In addition, high-voltage LED can be realized direct high drive, thereby has saved the cost that LED drives.
The implementation of the high-voltage LED of prior art through the series connection of LED subelement, raises the voltage of driving mainly through on same led chip, producing a plurality of LED subelements.The essence of said LED subelement is exactly a complete and independent LED; It includes substrate, n type gallium nitride layer, luminescent layer, P type gallium nitride layer, P ohmic contact layer and N ohmic contact layer etc., and the public substrate of each LED subelement constitutes said led chip.
At present, conventional high-tension LED is the formal dress product, and the formal dress product needed is dispelled the heat through following Sapphire Substrate and need be carried out routing technology and solves heat dissipation problem, and its radiating effect and structure are generally all not as good as the upside-down mounting product.So-called upside-down mounting high-voltage LED; Be with the led chip upside-down mounting on a substrate; Make P ohmic contact layer and the N ohmic contact layer of each LED subelement of led chip be electrically connected, each LED subelement is cascaded through the wiring on substrate with metal wiring layer on the substrate.
Yet wiring realizes the series connection of each LED subelement on substrate, can cause substrate to reduce with the area of dissipation that contacts of LED.In addition, the size of the LED subelement that each is discrete is less, and then substrate is routed in design and requires chip and substrate all degree of precision will be arranged simultaneously, and it designs general more complicated.
Like publication number is the US20080087902 United States Patent (USP); It is exactly the aforementioned structure that adopts; Its a plurality of LED subelements make each LED subelement realize series connection through substrate wiring, are electrically connected with the external world through two metal soldered balls, thereby form a kind of LED structure of high drive.Yet the connection electrode in this case needs the corresponding position of substrate to do to connect metal level just can connect reliably, is high drive because this LED adopts, and connection electrode directly touches substrate accordingly.On the one hand, led chip and substrate contacts area can be restricted because of the design of connection electrode, two metal soldered balls, influence radiating effect; On the other hand, connection electrode is directly had higher requirement to substrate Wiring technique precision, and it is assorted that design is covered, and improves manufacturing cost.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide the LED luminescent device and the manufacturing approach thereof of the better high drive of a kind of radiating effect.
In order to realize the present invention's first purpose, the technical scheme of being taked is following:
A kind of LED luminescent device of high drive; Comprise substrate and the upside-down mounting led chip on said substrate; Said led chip comprises the LED subelement of a plurality of separations; Said led chip is provided with the circuit articulamentum so that each LED subelement is cascaded, and on said led chip, also is provided with a heat conduction layer, on said substrate, also is provided with and the corresponding heat conduction pad in said heat conduction layer position.
In the LED luminescent device of said high drive; Its LED subelement comprises the n type gallium nitride that grows on the substrate, grow in luminescent layer on the n type gallium nitride, grow in the P type gallium nitride on the luminescent layer, the P type ohmic contact layer that is electrically connected with said P type gallium nitride and the N type ohmic contact layer that is electrically connected with said n type gallium nitride; Between each LED subelement, be provided with separator; Also be respectively arranged with a P electrode bonded layer and a N electrode bonded layer on the two LED subelements at series circuit two ends being positioned at; With P electrode and N electrode as led chip; Said led chip is provided with the circuit articulamentum so that each LED subelement is cascaded, specifically: realize the series connection between two LED subelements being provided with the circuit articulamentum between the N type ohmic contact layer of adjacent two LED subelements and the P type ohmic contact layer.
In the LED luminescent device of said high drive, on said led chip, also be provided with a heat conduction layer, specifically: at deposition one heat conduction layer on the P electrode bonded layer of led chip and the zone the N electrode bonded layer; Heat conduction pad and metal level that said substrate comprises substrate body and said substrate body upper surface is set; The position of said heat conduction pad is corresponding consistent with the heat conduction layer of reversing led chip above that with size; Said metal level comprises P electrode bonding region, the P electrode draw-out area that is connected with said P electrode bonding region, N electrode bonding region and the N electrode draw-out area that is connected with said N electrode bonding region; Said P electrode bonding region is corresponding with the position of the P electrode bonded layer of reversing led chip above that; Said N electrode bonding region is corresponding with the position of the N electrode bonded layer of reversing led chip above that, and said P electrode draw-out area and N electrode draw-out area are positioned at the two edges of said substrate body.
Further, said metal level is processed by following any metal or their alloy: gold, silver, nickel, copper and tin.
Further, said P type ohmic contact layer is the high reflecting metal material layer, and said high reflecting metal material layer is processed by following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
Further, said separator is diamond-film-like (DLC), nano aluminum nitride film or nano silicon nitride silicon fiml
Further, material forms or various material layers is folded forms said heat conduction layer by singly planting; When said heat conduction layer was formed by single kind material, its material of selecting for use was an insulating material; When said heat conduction layer formed by various material layers is folded, its material of selecting for use was insulating material and metal material, and said insulating material forms an insulating barrier and contacts with led chip, and said metal material is layered on the said insulating material; Said insulating material comprises diamond-film-like (DLC), nano aluminum nitride or nano-silicon nitride; Said metal material is following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
Further, said heat conduction pad is formed by following any material or multiple material stacks: diamond-film-like (DLC), nano aluminum nitride, nano-silicon nitride or metal material; Said metal material is following any metal or their alloy: titanium, copper, aluminium, gold, nickel, silver, platinum and palladium.
In order to realize second goal of the invention of the present invention, the technical scheme of being taked is following:
A kind of manufacturing approach of LED luminescent device of high drive comprises led chip making step, substrate manufacture step and led chip and substrate bonding step:
Wherein, the led chip making step, specific as follows:
At a growth substrate growing epitaxial layers, said epitaxial loayer comprises one deck n type gallium nitride, a luminescent layer and one deck P type gallium nitride of growth successively;
The said epitaxial loayer of etching is until exposing growth substrates, thereby epitaxial loayer is divided into a plurality of independently subelements, and forms a separator in etch areas through deposition or plated film;
Each sub-cells of photoetching is until exposing n type gallium nitride, and on the sidewall of patterned area deposition one insulating barrier;
On n type gallium nitride, make N type ohmic contact layer, and on P type gallium nitride, make P type ohmic contact layer;
Growth one conductive layer on N type ohmic contact layer and P type ohmic contact layer, and, form the circuit articulamentum through etching technics removal all the other conductive regions except that the conductive region of the n type gallium nitride of realizing adjacent two subelements and the series connection of P type gallium nitride;
Zone except that the P type ohmic contact layer of the N type ohmic contact layer of the subelement that is positioned at series circuit one end and the subelement that is positioned at the series circuit other end covers a heat conduction layer;
On the N type ohmic contact layer of the subelement that is positioned at series circuit one end, make a N electrode bonded layer, on the P of the subelement that is positioned at series circuit other end type ohmic contact layer, make a P electrode bonded layer;
Wherein, the substrate manufacture step, specific as follows:
On substrate body, make a metal level; And the N electrode draw-out area of producing P electrode bonding region, the P electrode draw-out area that is connected with said P electrode bonding region, N electrode bonding region and being connected through etching with said N electrode bonding region; Said P electrode bonding region is corresponding with the position of the P electrode bonded layer of reversing led chip above that; Said N electrode bonding region is corresponding with the position of the N electrode bonded layer of reversing led chip above that, and said P electrode draw-out area and N electrode draw-out area are positioned at the two edges of said substrate body;
On substrate body, make a heat conduction pad, the position of said heat conduction pad is corresponding consistent with the heat conduction layer of reversing led chip above that with size;
Wherein, led chip and substrate bonding step, specific as follows:
With the N electrode bonded layer of led chip and P electrode bonded layer respectively with substrate on N electrode bonding region and P electrode bonding region be electrically connected.
Further, when said heat conduction layer is selected diamond-film-like (DLC) for use, specifically: the method for at first using plasma chemical precipitation (RIE) is deposited in diamond-film-like (DLC) on the led chip, forms through dry method or wet etching then; When said heat conduction layer is selected nano aluminum nitride or nano-silicon nitride for use, specifically: at first nano aluminum nitride or nano-silicon nitride are evenly mixed with the light-sensitive polyimide photoresist, adopt rotary coating and and photoetching formation then.
The present invention is a kind of LED luminescent device of high drive of inverted structure, and being connected on the led chip between each subelement of led chip realizes, the area of heat-conducting layer and thermal land is done more, and further improves radiating effect.The thermoelectric isolating construction of the flip chip bonding that the present invention adopts can conduct the heat of LED fast, reduces the LED junction temperature, improves the LED life-span.Simultaneously, metal connecting layer is made on the chip, makes the wiring of substrate simpler and easy, improves LED reliability and production yield.
Description of drawings
In order to understand the present invention more clearly, below accompanying drawings is set forth embodiment of the present invention.
Fig. 1 is the cutaway view of the led chip of the embodiment of the invention 1;
Fig. 2 is the upward view of the led chip of the embodiment of the invention 1;
Fig. 3 is the vertical view of the substrate of the embodiment of the invention 1;
Fig. 4 be Fig. 3 A-A to cutaway view;
Fig. 5 is the LED and the substrate bonded cutaway view partly of the luminescent device of the embodiment of the invention 1;
Fig. 6 is one of structural representation in the production process of the embodiment of the invention 1;
Fig. 7 be in the production process of the embodiment of the invention 1 structural representation two;
Fig. 8 be in the production process of the embodiment of the invention 1 structural representation three.
Among the figure:
100-substrate, 101-N type gallium nitride, 102-luminescent layer, 103-P type gallium nitride, 104-N type ohmic contact layer, 105-P type ohmic contact layer, 106-separator, 107-circuit articulamentum, 108-heat conduction layer, 109-N electrode bonded layer, 110-P electrode bonded layer, 11-insulating barrier;
200-substrate body, 201-heat conduction pad, 202-P electrode bonding region, 203-P electrode draw-out area, 204-N electrode bonding region, 205-N electrode draw-out area.
Embodiment
Embodiment 1:
Present embodiment discloses a kind of LED luminescent device of high drive, comprises substrate and the upside-down mounting led chip on said substrate.
As illustrated in fig. 1 and 2; This led chip comprises the LED subelement of a plurality of separations, and the LED subelement comprises the n type gallium nitride 101 that grows on the substrate 100, grows in the luminescent layer 102 on the n type gallium nitride 101, the N type ohmic contact layer 104 that grows in the P type gallium nitride 103 on the luminescent layer 102, the P type ohmic contact layer 105 that is electrically connected with said P type gallium nitride 103 and be electrically connected with said n type gallium nitride 101; Wherein, between each LED subelement, be provided with separator 106; Wherein, also be respectively arranged with a P electrode bonded layer 110 and a N electrode bonded layer 109 on the two LED subelements at series circuit two ends with P electrode and N electrode being positioned at as led chip; Wherein, in the series connection that realizes on the led chip between each LED subelement, between the N type ohmic contact layer 104 of adjacent two LED subelements and P type ohmic contact layer 105, be provided with circuit articulamentum 107; For the ease of the heat on the led chip is conducted on the substrate, deposition one heat conduction layer 108 on the zone except that the P electrode bonded layer 110 of led chip and N electrode bonded layer 109.
Shown in Fig. 3 and 4, heat conduction pad 201 and metal level that substrate comprises substrate body 200 and said substrate body 200 upper surfaces are set.Wherein, the position of heat conduction pad 201 is corresponding consistent with the heat conduction layer 108 of reversing led chip above that with size; Wherein, metal level comprises P electrode bonding region 202, the P electrode draw-out area 203 that is connected with said P electrode bonding region 202, N electrode bonding region 204 and the N electrode draw-out area 205 that is connected with said N electrode bonding region 204.As shown in Figure 5, P electrode bonding region 202 is corresponding with the position of the P electrode bonded layer 110 of reversing led chip above that, and N electrode bonding region 204 is corresponding with the position of the N electrode bonded layer 109 of reversing led chip above that.As shown in Figure 3, P electrode draw-out area and N electrode draw-out area are positioned at the two edges of said substrate body.
Wherein, P type ohmic contact layer 105 is the high reflecting metal material layer, and said high reflecting metal material layer is processed by following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
Wherein, when heat conduction layer 108 was formed by single kind material, its material of selecting for use was an insulating material, and said insulating material comprises diamond-film-like (DLC), nano aluminum nitride or nano-silicon nitride.
Wherein, when heat conduction layer 108 formed by various material layers is folded, its material of selecting for use was insulating material and metal material, and said insulating material forms an insulating barrier and contacts with led chip, and said metal material is layered on the said insulating material; Said insulating material comprises diamond-film-like (DLC), nano aluminum nitride or nano-silicon nitride; Said metal material is following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
Wherein, heat conduction pad 201 is formed by following any material or multiple material stacks: diamond-film-like (DLC), nano aluminum nitride, nano-silicon nitride or metal material; Said metal material is following any metal or their alloy: titanium, copper, aluminium, gold, nickel, silver, platinum and palladium.
Wherein, separator 106 is diamond-film-like (DLC), nano aluminum nitride film, nano silicon nitride silicon fiml or the film of being made up of other insulating material and metal.
Wherein, the material of metal level adopts the metal of high diffusion coefficients such as gold, silver, nickel, copper, tin or the alloy material of being made up of these metals on the substrate.
Wherein, base main body 200 materials adopt aluminium nitride ceramics, aluminium oxide ceramics, silicon, aluminium, copper, and metal substrate wherein and semiconductor substrate need be done insulating barrier on its surface, and this insulating barrier is the DLC thin-film material.
The manufacturing approach of the LED luminescent device of aforementioned high drive comprises led chip making step, substrate manufacture step and led chip and substrate bonding step:
Wherein, the led chip making step, specific as follows:
As shown in Figure 6, at first, at a growth substrate 100 growing epitaxial layers, said epitaxial loayer comprises one deck n type gallium nitride 101, a luminescent layer 102 and one deck P type gallium nitride 103 of growth successively; Then, the said epitaxial loayer of etching is until exposing growth substrates 100, thereby epitaxial loayer is divided into a plurality of independently subelements, and forms a separator 106 in etch areas through deposition or plated film;
As shown in Figure 7, at first, each sub-cells of photoetching is until exposing n type gallium nitride 101, and on the sidewall of patterned area deposition one layer insulating 111; Then, on n type gallium nitride 101, make N type ohmic contact layer 104, and on P type gallium nitride 103, make P type ohmic contact layer 105;
As shown in Figure 8; Growth one conductive layer on N type ohmic contact layer 104 and P type ohmic contact layer 105; And, form circuit articulamentum 107 through etching technics removal all the other conductive regions except that the conductive region of the n type gallium nitride of realizing adjacent two subelements 10 and the series connection of P type gallium nitride; Zone except that the P type ohmic contact layer of the N type ohmic contact layer of the subelement that is positioned at series circuit one end and the subelement that is positioned at the series circuit other end covers a heat conduction layer 108; Wherein, when heat conduction layer 108 is selected diamond-film-like (DLC) for use, specifically: the method for at first using plasma chemical precipitation (RIE) is deposited in diamond-film-like (DLC) on the led chip, forms through dry method or wet etching then; Wherein, when heat conduction layer 108 is selected nano aluminum nitride or nano-silicon nitride for use, specifically: at first nano aluminum nitride or nano-silicon nitride are evenly mixed with the light-sensitive polyimide photoresist, adopt rotary coating then and reach photoetching to form;
As shown in Figure 1, on the N type ohmic contact layer 104 of the subelement that is positioned at series circuit one end, make a N electrode bonded layer 109, on the P of the subelement that is positioned at series circuit other end type ohmic contact layer 105, make a P electrode bonded layer 110.
Wherein, the substrate manufacture step, specific as follows:
Shown in Fig. 3 and 4; On substrate body 200, make a metal level; And the N electrode draw-out area 205 of producing P electrode bonding region 202, the P electrode draw-out area 203 that is connected with said P electrode bonding region 202, N electrode bonding region 204 and being connected through etching with said N electrode bonding region 204; Said P electrode bonding region 202 is corresponding with the position of the P electrode bonded layer 110 of reversing led chip above that; Said N electrode bonding region 204 is corresponding with the position of the N electrode bonded layer 109 of reversing led chip above that, and said P electrode draw-out area 203 and N electrode draw-out area 205 are positioned at the two edges of said substrate body 200;
Shown in Fig. 3 and 4, on substrate body 200, make a heat conduction pad 201, the position of heat conduction pad 201 is corresponding consistent with the heat conduction layer 108 of reversing led chip above that with size.
Wherein, led chip and substrate bonding step, specific as follows:
As shown in Figure 5, with the N electrode bonded layer of led chip 109 and P electrode bonded layer 110 respectively with substrate on N electrode bonding region 204 be electrically connected with P electrode bonding region 202, form a kind of high drive luminescent device that uses flip-chip.
The present invention has been produced on the led chip the series circuit of the led chip subelement in the LED luminescent device of upside-down mounting class is ingenious, can make that not only the wiring of substrate is simpler and easy, further improves LED reliability and production yield.And, on led chip, increased large-area heat conduction layer, the heat on the led chip is conducted to the heat conduction pad on the substrate fast, further improve its radiating effect.
More than describe preferred embodiment of the present invention in detail, should be appreciated that those of ordinary skill in the art need not creative work and just can design according to the present invention make many modifications and variation.Therefore, all technical staff in the art according to the present invention design on the prior art basis through logic analysis, reasoning perhaps according to the available technical scheme of limited experiment, all should be among determined protection range by these claims.
Claims (10)
1. the LED luminescent device of a high drive comprises substrate and the upside-down mounting led chip on said substrate, and said led chip comprises the LED subelement of a plurality of separations, it is characterized in that:
Said led chip is provided with the circuit articulamentum so that each LED subelement is cascaded;
On said led chip, also be provided with a heat conduction layer, on said substrate, also be provided with and the corresponding heat conduction pad in said heat conduction layer position.
2. the LED luminescent device of high drive according to claim 1 is characterized in that:
Said LED subelement comprises the n type gallium nitride that grows on the substrate, grow in luminescent layer on the n type gallium nitride, grow in the P type gallium nitride on the luminescent layer, the P type ohmic contact layer that is electrically connected with said P type gallium nitride and the N type ohmic contact layer that is electrically connected with said n type gallium nitride;
Between each LED subelement, be provided with separator;
Also be respectively arranged with a P electrode bonded layer and a N electrode bonded layer on the two LED subelements at series circuit two ends being positioned at, with P electrode and N electrode as led chip;
Said led chip is provided with the circuit articulamentum so that each LED subelement is cascaded, specifically:
In that being set between the N type ohmic contact layer of adjacent two LED subelements and the P type ohmic contact layer, the circuit articulamentum realizes the series connection between two LED subelements.
3. the LED luminescent device of high drive according to claim 2 is characterized in that:
On said led chip, also be provided with a heat conduction layer, specifically: at deposition one heat conduction layer on the P electrode bonded layer of led chip and the zone the N electrode bonded layer;
Heat conduction pad and metal level that said substrate comprises substrate body and said substrate body upper surface is set;
The position of said heat conduction pad is corresponding consistent with the heat conduction layer of reversing led chip above that with size;
Said metal level comprises P electrode bonding region, the P electrode draw-out area that is connected with said P electrode bonding region, N electrode bonding region and the N electrode draw-out area that is connected with said N electrode bonding region; Said P electrode bonding region is corresponding with the position of the P electrode bonded layer of reversing led chip above that; Said N electrode bonding region is corresponding with the position of the N electrode bonded layer of reversing led chip above that, and said P electrode draw-out area and N electrode draw-out area are positioned at the two edges of said substrate body.
4. the LED luminescent device of high drive according to claim 3 is characterized in that:
Said metal level is processed by following any metal or their alloy: gold, silver, nickel, copper and tin.
5. the LED luminescent device of high drive according to claim 2 is characterized in that:
Said P type ohmic contact layer is the high reflecting metal material layer, and said high reflecting metal material layer is processed by following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
6. the LED luminescent device of high drive according to claim 2 is characterized in that:
Said separator is diamond-film-like (DLC), nano aluminum nitride film or nano silicon nitride silicon fiml
7. the LED luminescent device of high drive according to claim 1 is characterized in that:
Said heat conduction layer is formed by single kind material or various material layers is folded forms;
When said heat conduction layer was formed by single kind material, its material of selecting for use was an insulating material;
When said heat conduction layer formed by various material layers is folded, its material of selecting for use was insulating material and metal material, and said insulating material forms an insulating barrier and contacts with led chip, and said metal material is layered on the said insulating material;
Said insulating material comprises diamond-film-like (DLC), nano aluminum nitride or nano-silicon nitride;
Said metal material is following any metal or their alloy: titanium, aluminium, gold, nickel, silver, platinum and palladium.
8. the LED luminescent device of high drive according to claim 1 is characterized in that:
Said heat conduction pad is formed by following any material or multiple material stacks: diamond-film-like (DLC), nano aluminum nitride, nano-silicon nitride or metal material;
Said metal material is following any metal or their alloy: titanium, copper, aluminium, gold, nickel, silver, platinum and palladium.
9. the manufacturing approach of the LED luminescent device of a high drive is characterized in that comprising:
The led chip making step, specific as follows:
At a growth substrate growing epitaxial layers, said epitaxial loayer comprises one deck n type gallium nitride, a luminescent layer and one deck P type gallium nitride of growth successively;
The said epitaxial loayer of etching is until exposing growth substrates, thereby epitaxial loayer is divided into a plurality of independently subelements, and forms a separator in etch areas through deposition or plated film;
Each sub-cells of photoetching is until exposing n type gallium nitride, and on the sidewall of patterned area deposition one insulating barrier;
On n type gallium nitride, make N type ohmic contact layer, and on P type gallium nitride, make P type ohmic contact layer;
Growth one conductive layer on N type ohmic contact layer and P type ohmic contact layer, and, form the circuit articulamentum through etching technics removal all the other conductive regions except that the conductive region of the n type gallium nitride of realizing adjacent two subelements and the series connection of P type gallium nitride;
Zone except that the P type ohmic contact layer of the N type ohmic contact layer of the subelement that is positioned at series circuit one end and the subelement that is positioned at the series circuit other end covers a heat conduction layer;
On the N type ohmic contact layer of the subelement that is positioned at series circuit one end, make a N electrode bonded layer, on the P of the subelement that is positioned at series circuit other end type ohmic contact layer, make a P electrode bonded layer;
The substrate manufacture step, specific as follows:
On substrate body, make a metal level; And the N electrode draw-out area of producing P electrode bonding region, the P electrode draw-out area that is connected with said P electrode bonding region, N electrode bonding region and being connected through etching with said N electrode bonding region; Said P electrode bonding region is corresponding with the position of the P electrode bonded layer of reversing led chip above that; Said N electrode bonding region is corresponding with the position of the N electrode bonded layer of reversing led chip above that, and said P electrode draw-out area and N electrode draw-out area are positioned at the two edges of said substrate body;
On substrate body, make a heat conduction pad, the position of said heat conduction pad is corresponding consistent with the heat conduction layer of reversing led chip above that with size; And
Led chip and substrate bonding step, specific as follows:
With the N electrode bonded layer of led chip and P electrode bonded layer respectively with substrate on N electrode bonding region and P electrode bonding region be electrically connected.
10. the manufacturing approach of the LED luminescent device of high drive according to claim 9 is characterized in that:
When said heat conduction layer is selected diamond-film-like (DLC) for use, specifically: the method for at first using plasma chemical precipitation (RIE) is deposited in diamond-film-like (DLC) on the led chip, forms through dry method or wet etching then;
When said heat conduction layer is selected nano aluminum nitride or nano-silicon nitride for use, specifically: at first nano aluminum nitride or nano-silicon nitride are evenly mixed with the light-sensitive polyimide photoresist, adopt rotary coating and and photoetching formation then.
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| CN108538981A (en) * | 2018-03-26 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN109386748A (en) * | 2018-11-29 | 2019-02-26 | 山东聚芯光电科技有限公司 | A kind of LED light emitting device of high drive |
| CN112420911A (en) * | 2020-10-29 | 2021-02-26 | 南京中电熊猫液晶显示科技有限公司 | Micro-LED self-radiating device and manufacturing method thereof |
| WO2022252476A1 (en) * | 2021-05-31 | 2022-12-08 | 京东方科技集团股份有限公司 | Light-emitting device, light-emitting substrate, and method for manufacturing light-emitting device |
| WO2024114604A1 (en) * | 2022-11-29 | 2024-06-06 | 厦门三安光电有限公司 | Light-emitting element, light-emitting component and manufacturing method |
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