CN106025048A - High-power LED lighting package structure for vehicle lamp - Google Patents
High-power LED lighting package structure for vehicle lamp Download PDFInfo
- Publication number
- CN106025048A CN106025048A CN201610582240.6A CN201610582240A CN106025048A CN 106025048 A CN106025048 A CN 106025048A CN 201610582240 A CN201610582240 A CN 201610582240A CN 106025048 A CN106025048 A CN 106025048A
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- CN
- China
- Prior art keywords
- diamond
- coating
- layer
- conductive layer
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/02—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
The invention discloses a high-power LED lighting package structure for a vehicle lamp. The high-power LED lighting package structure comprises a high-purity aluminum plate, a diamond-like coating, a conductive layer, white silica gel, LED chips, a package layer, a liquid phase fusion layer and a fluorescent glue membrane, wherein the diamond-like coating is arranged outside the high-purity aluminum plate, the conductive layer is arranged on the diamond-like coating, the liquid phase fusion layer is arranged on the conductive layer, a chip array composed of one or more LED chips is arranged on the liquid phase fusion layer, the package layer and/or the fluorescent glue membrane are/is arranged on the LED chips, and the periphery of the chip array is provided with the white silica gel for packaging the peripheral region. The high-power LED lighting package structure for the vehicle lamp can withstand high driving current, is low in cost and system thermal resistance, is high in lighting efficiency, and satisfies the requirement on high integration degree of automobile lighting.
Description
Technical field
The present invention relates to a kind of car light high-capacity LED illuminating device, the copper aluminium base high-power LED illuminator part as heat dissipation channel is covered in a kind of direct employing superconduction.
Background technology
Along with LED chip material and the progress of technique, the light efficiency of great power LED progressively gets a promotion, and the most increasing LED applies in automobile lamp field.The photoelectric transformation efficiency of LED chip only has 40 ~ 50% at present, and great power LED can drastically raise along with the lifting operating temperature driving electric current.Due to the little typically about 1mm of LED chip size2If heat can not be shed in time, not only can affect the luminous efficiency of LED, resulting even in it and burning.
Car light LED encapsulation at present typically uses aluminium nitride, aluminium oxide or cuprio copper-clad plate as the radiation conductive structure of LED chip, aluminium nitride, cuprio copper-clad plate cost the highest processing inconvenience, and aluminium oxide heat conductivity is the lowest, only 17 ~ 22w/m.k, owing to car light needs multiple LED combination to improve power, the most seriously constrain LED application extension on car light.
Summary of the invention
Goal of the invention: the defect existed for prior art, it is an object of the invention to provide a kind of car light high-capacity LED and illuminates encapsulating structure, improves luminous flux density and the heat dissipation channel of LED encapsulation, thus ensures the steady operation of LED car lamp, meets high integration requirement.
Technical scheme: in order to achieve the above object, the present invention is achieved through the following technical solutions:
A kind of car light high-capacity LED illuminates encapsulating structure, merges and fluorescent glue diaphragm including high-purity aluminium sheet, diamond-like coating, conductive layer, white silica gel, LED chip, encapsulated layer, liquid phase；At high-purity aluminium sheet peripheral hardware diamond-like coating, on diamond-like coating, set conductive layer, set liquid phase on the electrically conductive to merge, set, on liquid phase merges, the chip array being made up of more than 1 LED chip, LED chip sets encapsulated layer and or fluorescent glue diaphragm, sets white silica gel encapsulation periphery in chip array periphery.
The thickness of described diamond-like coating is 10 ~ 20um.
The thickness of described high-purity aluminium sheet is 0.8 ~ 3mm.
Described conductive layer is conductive copper layer, and copper layer thickness is 0.1 ~ 0.2um.
Described conductive layer is at least welded with four great power LED chips connected above by serial or parallel connection mode.
The diamond-film-like utilizing PVD coating technique to prepare is the preferable heat sink material of large-power light-emitting diodes.Diamond like carbon film DLC can link up quasiconductor GaN and metal substrate effectively, and the thermal conductivity (475W/mK) of DLC is higher than copper, can not only alleviate thermal mismatching, and can strengthen thermal transpiration.
Beneficial effect: compared with prior art, the car light high-capacity LED of the present invention illuminates encapsulating structure, can bear high driving electric current, and cost cheap system thermal resistance is low, and light efficiency is high, meets the high integration requirement of automotive lighting.
Accompanying drawing explanation
Fig. 1 is the side view of car light high-capacity LED illumination encapsulating structure；
Fig. 2 is the top view of car light high-capacity LED illumination encapsulating structure.
Detailed description of the invention
Below in conjunction with concrete accompanying drawing, the present invention is described further.
As depicted in figs. 1 and 2, car light high-capacity LED illuminates encapsulating structure, is mainly used on automobile lamp.Main structural components includes: high-purity aluminium sheet 1, diamond-like coating 2, conductive layer 3, white silica gel 4, LED chip 5, encapsulated layer 6, liquid phase fusion 7 and fluorescent glue diaphragm 8；At high-purity aluminium sheet 1 peripheral hardware diamond-like coating 2, set conductive layer 3 at diamond-like coating 2, conductive layer 3 sets liquid phase and merges 7, merge in liquid phase and set LED chip 5 on 7, between LED chip 5, set encapsulated layer 6, and encapsulate periphery with white silica gel 4；LED chip 5 sets fluorescent glue diaphragm 8.
It is a kind of noncrystalline membrane that high-purity aluminium sheet 1 uses thin film evaporation deposition and ion implantation technique to obtain diamond-like coating 2(diamond like carbon film (DLC), there is high rigidity and high-termal conductivity, it is diamond and structure that netted graphite coexists), diamond-like coating 2 obtains metal conducting layer 3(conductive copper layer by sputtering sedimentation, plating etc.).Arrangement etching conductive copper layer according to application LED chip 5, forms the PCB that certain circuit function connects.The eutectic welding preferred high-power chip of LED chip 5(on PCB).The welding of this eutectic is under the conditions of heat (220-320 DEG C), and soldered ball forms liquid phase fusion 7 with the metal of conductive layer, and this mode has the highest bond strength and thermal conductivity, is particularly suitable for this PCB application.Certainly select middle low power chip, or employing glue bonding is also feasible.It is coated with white silica gel 4 at LED chip 5 array surrounding point gum machine, after curing molding, on chip, preferably it is coated with encapsulated layer (transparent silica gel) 6, select lid fluorescent glue diaphragm 8 curing molding finally according to the glow color needed, it is possible to be directly coated with on chip doped with a kind of color or multiple color containing fluorescent powder silica gel.
Wherein, diamond-like coating typically uses vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique plasma-enhanced vapor deposition process to prepare, and the thickness of this diamond-like coating 2 is 10 ~ 20um.The aluminium base of high-purity aluminium sheet 1 typically uses 1070,1050 etc. 1 to be high-purity high aluminum heat conducting plate, and aluminium plate thickness is generally 0.8 ~ 3mm as required.The conductive copper layer of aluminum-based copper-clad plate is to be formed by sputtering sedimentation, and copper layer thickness is generally 0.1 ~ 0.2um, and the layers of copper after sputtering sedimentation is thickeied by plating, and heavy copper thickness is generally 10 ~ 20um.Conductive copper layer is at least welded with four high-power LED chips connected above by series-parallel system.
As described above, only the preferred embodiments of the invention, it is impossible to assert the application be embodied as be limited only to these explanations.
Claims (5)
1. a car light high-capacity LED illuminates encapsulating structure, it is characterised in that: include that high-purity aluminium sheet (1), diamond-like coating (2), conductive layer (3), white silica gel (4), LED chip (5), encapsulated layer (6), liquid phase merge (7) and fluorescent glue diaphragm (8)；At high-purity aluminium sheet (1) peripheral hardware diamond-like coating (2), on diamond-like coating (2), set conductive layer (3), conductive layer (3) sets liquid phase and merges (7), merge in liquid phase and set, on (7), the chip array being made up of more than 1 LED chip (5), LED chip 5 sets encapsulated layer (6) and or fluorescent glue diaphragm (8), sets white silica gel (4) encapsulation periphery in chip array periphery.
2. illuminate encapsulating structure according to the car light high-capacity LED described in claim 1, it is characterised in that the thickness of described diamond-like coating (2) is 10 ~ 20um.
3. illuminate encapsulating structure according to the car light high-capacity LED described in claim 1, it is characterised in that: the thickness of described high-purity aluminium sheet (1) is 0.8 ~ 3mm.
4. illuminate encapsulating structure according to the car light high-capacity LED described in claim 1, it is characterised in that: described conductive layer (3) is conductive copper layer, and thickness is 10 ~ 20um.
5. illuminate encapsulating structure according to the car light high-capacity LED described in claim 1, it is characterised in that: on described conductive layer (3), at least it is welded with four great power LED chips (5) connected above by serial or parallel connection mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610582240.6A CN106025048A (en) | 2016-07-22 | 2016-07-22 | High-power LED lighting package structure for vehicle lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610582240.6A CN106025048A (en) | 2016-07-22 | 2016-07-22 | High-power LED lighting package structure for vehicle lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106025048A true CN106025048A (en) | 2016-10-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610582240.6A Pending CN106025048A (en) | 2016-07-22 | 2016-07-22 | High-power LED lighting package structure for vehicle lamp |
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| Country | Link |
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| CN (1) | CN106025048A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107642767A (en) * | 2017-09-27 | 2018-01-30 | 南京工业大学 | LED heat radiating materials surface is without viscose glue heat superconducting composite coating, LED heat radiation substrate and preparation method thereof |
| CN110854151A (en) * | 2019-10-25 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130244A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | LED (light-emitting diode) radiating substrate based on diamond film and manufacturing method thereof |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN102386178A (en) * | 2011-12-08 | 2012-03-21 | 晶科电子（广州）有限公司 | High-voltage-driving LED light-emitting device and manufacturing method thereof |
-
2016
- 2016-07-22 CN CN201610582240.6A patent/CN106025048A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130244A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | LED (light-emitting diode) radiating substrate based on diamond film and manufacturing method thereof |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN102386178A (en) * | 2011-12-08 | 2012-03-21 | 晶科电子（广州）有限公司 | High-voltage-driving LED light-emitting device and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107642767A (en) * | 2017-09-27 | 2018-01-30 | 南京工业大学 | LED heat radiating materials surface is without viscose glue heat superconducting composite coating, LED heat radiation substrate and preparation method thereof |
| CN110854151A (en) * | 2019-10-25 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
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Application publication date: 20161012 |
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