CN104766914A - High-lighting-rate high-voltage LED chip structure - Google Patents
High-lighting-rate high-voltage LED chip structure Download PDFInfo
- Publication number
- CN104766914A CN104766914A CN201510188014.5A CN201510188014A CN104766914A CN 104766914 A CN104766914 A CN 104766914A CN 201510188014 A CN201510188014 A CN 201510188014A CN 104766914 A CN104766914 A CN 104766914A
- Authority
- CN
- China
- Prior art keywords
- led chip
- voltage led
- layer
- high voltage
- coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention provides a high-lighting-rate high-voltage LED chip structure, and belongs to the field of photoelectron light-emitting devices. The high-voltage LED chip structure comprises a plurality of micro-grain units. Each micro-grain unit comprises a substrate, and an N type nitride layer, a light-emitting layer, a P type nitride layer and a transparent conductive layer which sequentially grow on the substrate. The N type nitride layer is connected with an N type electrode. The transparent conductive layer is connected with a P type electrode. The micro-grain units are connected through the metal conductive layers to form serial connection and/or parallel connection. A passivation layer is arranged on the bottom face of each metal conductive layer. The high-voltage LED chip structure is characterized in that a coating layer is arranged on the surface of a high-voltage LED chip, and the surface of the coating layer is not smooth; the coating layer on the surface is roughened to form a non-smooth structure, the lighting efficiency and light outlet amount of the high-voltage LED chip are effectively increased, the performance of the high-voltage LED chip is improved, cost is low, and operation is easy.
Description
Technical field
The invention belongs to photoelectron light emitting device field, be specifically related to a kind of high high voltage LED chip structure of getting light rate.
Background technology
The advantages such as light-emitting diode (Light Emitting Diode, LED) has that volume is little, the life-span long, low in energy consumption, good stability, have been widely used in the daily lifes such as illumination, backlight display, automobile lamp.Most widely used is at present great power LED, but traditional DC high-power LED adopts the type of drive of big current low-voltage, and large drive current can cause device to occur serious hear rate, and light exitance is low, and current spread is poor.In order to solve great power LED large driven current density Problems existing, there has been proposed high voltage LED chip.High voltage LED chip is the Novel LED chip that the connection in series-parallel realizing micromeritics in chip-scale is formed.High voltage LED chip adopts low current to drive, and improves the reliability of high-voltage LED device, reduces the line loss in application process; Also significantly can reduce the designing requirement to heat-dissipating casing and cooling system simultaneously, reduce packaging cost.
Breakthrough along with the doping of gallium nitride (GaN) material P type is the rise of the third generation semi-conducting material of starting point, and the technological break-through of high-brightness LED based on group III-nitride, the nitride LED for new generation of green environmental protection solid light source obtains to be paid close attention to widely and studies.But, the refractive index of GaN semiconductor is higher (being about 2.5), total reflection can be there is and can not outgoing in the light being greater than critical angle incidence in two kinds of different materials (semiconductor and air) interface, cause light roundtrip in a semiconductor material, from the outgoing of chip table edge, even absorbed by semi-conducting material and consume.In order to reduce the refringence between semiconductor and air, improving and getting optical efficiency, usually can at organic substances such as high voltage LED chip surface-coated one deck epoxy resin or silica gel.Although surface coating layer can improve get optical efficiency, but have light can be limited in chip internal because of total reflection, or through multiple total reflection from chip sides outgoing, light also can be decayed in chip inner total reflection process; And for the LED that lateral area proportion is very little, getting light rate can be very low, limits the investigation and application of overlarge area high voltage LED chip.
Summary of the invention
The present invention is directed to the defect that background technology exists, propose a kind of high high voltage LED chip structure of getting light rate, what this high voltage LED chip effectively can improve high-voltage LED gets optical efficiency, increases the amount of light of high-voltage LED, promotes the performance of high-voltage LED.
Technical scheme of the present invention is as follows:
A kind of high high voltage LED chip structure of getting light rate, comprise multiple micromeritics unit, each micromeritics unit comprises the N-type nitride layer 2 that substrate 1 and substrate 1 grow successively, luminescent layer 3, P type nitride layer 4 and transparency conducting layer 5, described N-type nitride layer 2 connects N-type electrode 8, described transparency conducting layer 5 connects P-type electrode 11, series connection is connected to form or/and in parallel by metal conducting layer 9 between described each micromeritics unit, described metal conducting layer 9 bottom surface is provided with passivation layer 10, it is characterized in that, described high voltage LED chip surface also arranges coat, the surperficial right and wrong of described coat are smooth.
Further, the surface of described coat is that the projection of height fluctuating is or/and sunk structure.
Further, described raised or sunken be rule or/and irregular figure form.
Further, described coat is the high-molecular organic material of low-refraction, is specially epoxy resin or silica gel etc.
Further, described substrate is the material of high heat conductance, as carborundum etc.; Described passivation layer is silicon nitride etc.
Further, described coat is that effects on surface carries out roughening treatment and obtains.
A high manufacture method of getting the high voltage LED chip of light rate, comprises the following steps:
Step 1: adopt conventional method to prepare N-type nitride layer, luminescent layer, P type nitride layer, transparency conducting layer, N-type electrode, P-type electrode, metal conducting layer and passivation layer on substrate;
Step 2: make silica-based alligatoring template;
Step 3: one deck coat is prepared on the LED chip surface obtained in step 1, silica-based alligatoring template step 2 obtained is pressed on coat, and solidification, takes off alligatoring template, obtain high voltage LED chip of the present invention.
Beneficial effect of the present invention is: the present invention is by carrying out roughening treatment to high voltage LED chip surface coating layer, form non-smooth structure, what effectively improve high voltage LED chip gets optical efficiency, add the amount of light of high voltage LED chip, improve the performance of high voltage LED chip, and it is with low cost, simple to operate.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of existing high voltage LED chip.
Fig. 2 is the simulation result figure of existing high voltage LED chip structure.
Fig. 3 is the cross-sectional view of a kind of high voltage LED chip of the embodiment of the present invention.
Fig. 4 is the simulation result figure of a kind of high voltage LED chip structure of the embodiment of the present invention.
Fig. 5 is preparation technology's flow chart of a kind of alligatoring template of the embodiment of the present invention.
Fig. 6 is preparation technology's flow chart with the surface coating layer of non-flat configuration of the embodiment of the present invention.
Fig. 7 is the cross-sectional view of another execution mode of the high voltage LED chip that the present invention proposes.
Fig. 8 is a kind of operating state of the alligatoring structure that the silica gel of the embodiment of the present invention is formed.
Fig. 9 is the another kind of operating state of the alligatoring structure that the silica gel of the embodiment of the present invention is formed.
Embodiment
The coat of the present invention to conventional high-tension LED chip surface carries out roughening treatment, and form the coat of surface irregularity, that effectively can improve high voltage LED chip gets optical efficiency.Principle of the present invention is: be described for the silica gel coat for regularly arranged rectangular preiection structure surperficial in embodiment, the refractive index of silica gel is 1.4, and the angle of total reflection of Air Interface is about 46 °.As shown in Figure 8, in coat, suppose that light II is with the angle of α=50 ° incident coat surfacing part, because incidence angle is greater than the angle of total reflection, light can be reflected back coat inside; If same to become the light I of 50 ° of angles to be slanted through rectangular preiection sidewall with coat surfacing part, calculating incidence angle according to geometrical relationship is 40 °, and now incidence angle is less than the angle of total reflection, and light then can enter air by outgoing coat.As shown in Figure 9, suppose that light II is with α=30 ° incident coat surfacing part, because incidence angle is less than the angle of total reflection, light can go out to inject air; If same to become the light I of 30 ° of angles to slant as rectangular preiection sidewall with coat surfacing part, calculating incidence angle according to geometrical relationship is 60 °, total reflection can occur, after several total reflection, be incident to again coat surface, go out to inject air.
In order to the coat further illustrating surface irregularity of the present invention to get the impact of optical efficiency on high voltage LED chip, optical simulation software TracePro is adopted to carry out sunykatuib analysis respectively to two kinds of high voltage LED chip structures (structure of the present invention shown in the existing structure shown in Fig. 1 and Fig. 3).Emitting light flux is 0.05lm, and total light number is 10000.Adopt existing high voltage LED chip structure simulation as shown in Figure 1 to obtain the illumination figure of incident flux as shown in Figure 2, the below of figure gives simulation result: the maximum of illumination, minimum value and mean value, total luminous flux, light number and get light rate.And the result that employing structure simulation as shown in Figure 3 obtains as shown in Figure 4.Comparison diagram 2 and Fig. 4 known, be no matter maximum, the mean value of illumination, or total luminous flux, light number, the result shown in Fig. 4 is all better than the result shown in Fig. 2; Particularly get light rate as shown in Figure 2 0.2824 bring up to 0.39777 shown in Fig. 4, get optical efficiency and be improved significantly.
Embodiment
A kind of high high voltage LED chip structure of getting light rate, as shown in Figure 3, comprise multiple micromeritics unit, each micromeritics unit comprises the N-type nitride layer 2 that substrate 1 and substrate 1 grow successively, luminescent layer 3, P type nitride layer 4 and transparency conducting layer 5, one end on described N-type nitride layer 2 connects N-type electrode 8, on described transparency conducting layer 5, the other end relative with N-type electrode 8 arranges P-type electrode 11, series connection is connected to form or/and in parallel by metal conducting layer 9 between each micromeritics unit, passivation layer 10 is set between metal conducting layer 9 and substrate 1, described high voltage LED chip surface-coated silica gel, described Silica Surface is regularly arranged rectangle projection 7, to reduce total reflection, improve and get optical efficiency.
In the present embodiment, substrate is non-conductive and has the carborundum of high heat conductance, can strengthen the heat-sinking capability of high-voltage LED; Nitride in N-type nitride layer 2 and P type nitride layer 4 is GaN; Luminescent layer 3 is the formation of AlGaN/GaN alternating growth; Transparency conducting layer 5 is tin indium oxide; Electrode material is Ti/Au alloy or Ti/Pt/Au alloy; Passivation layer 10 is silicon nitride; Described micromeritics unit forms cascaded structure by metal conducting layer 9.
The height that embodiment provides gets the manufacture method of the high voltage LED chip of light rate, comprises the following steps:
Step 1: adopt MOCVD method (MOCVD) sequentially to deposit on substrate 1 and form N-type GaN layer 2, luminescent layer 3, P type GaN layer 4;
Step 2: utilize photoetching and inductively coupled plasma (ICP) technology to etch the ohmic contact regions of N-type GaN layer 2;
Step 3: adopt photoetching and evaporation to make transparency conducting layer 5;
Step 4: adopt the passivation layer 10 bottom photoetching and evaporation making metal conducting layer 9;
Step 5: adopt photoetching, evaporation or photoetching, electric plating method prepare N-type electrode 8, between P-type electrode 11 with each micromeritics unit, connection in series-parallel is connected metal conducting layer 9;
Step 6: make silica-based alligatoring template: cleaning silicon chip, dries up; Spin coating one deck AZ5214 photoresist on silicon chip after cleaning, according to design figure carry out ultraviolet photolithographic exposure 6.5s, development 45s remove the photoresist be exposed, leave the figure of design, and at 110 DEG C post bake 90s; Adopt oxygen plasma to remove primer 2 minutes, wherein, oxygen flow is 150sccm, and power is 200W; Be that mask is etched silicon chip by dark silicon etching equipment with photoresist; Remove photoresist, cleaning, dries, obtains silica-based alligatoring template; Idiographic flow as shown in Figure 5;
Step 7: the high voltage LED chip surface-coated one deck silica gel obtained in step 5, the silica-based alligatoring template that step 6 obtains is coated with one deck silicone oil and does release treatment, silica-based alligatoring template is pressed on silica gel, then silica gel is solidified, after solidification terminates, silica-based alligatoring template is taken off, if desired Silica Surface is cleaned; Its concrete flow process as shown in Figure 6;
Step 8: the high voltage LED chip substrate thinning upper step obtained, continues the last part technology of chip: cut, burst apart, expand brilliant, some survey, sorting etc., complete the making of whole chip.
As shown in Figure 7, be another embodiment of the present invention, the projection that described coat surface is rule is formed with irregular figure and depression.
Claims (7)
1. get the high voltage LED chip structure of light rate for one kind high, comprise multiple micromeritics unit, each micromeritics unit comprises the N-type nitride layer (2) that substrate (1) and substrate (1) grow successively, luminescent layer (3), P type nitride layer (4) and transparency conducting layer (5), described N-type nitride layer (2) connects N-type electrode (8), described transparency conducting layer (5) connects P-type electrode (11), series connection is connected to form or/and in parallel by metal conducting layer (9) between described each micromeritics unit, described metal conducting layer (9) bottom surface is provided with passivation layer (10), it is characterized in that, described high voltage LED chip surface also arranges coat, the surperficial right and wrong of described coat are smooth.
2. height according to claim 1 gets the high voltage LED chip structure of light rate, it is characterized in that, the surface of described coat is that the projection of height fluctuating is or/and sunk structure.
3. height according to claim 2 gets the high voltage LED chip structure of light rate, it is characterized in that, described raised or sunken be rule or/and irregular figure.
4. height according to claim 1 gets the high voltage LED chip structure of light rate, it is characterized in that, described coat is the high-molecular organic material of low-refraction, is specially epoxy resin or silica gel.
5. height according to claim 1 gets the high voltage LED chip structure of light rate, it is characterized in that, described substrate is carborundum, and described passivation layer is silicon nitride.
6. height according to claim 1 gets the high voltage LED chip structure of light rate, it is characterized in that, described coat is that effects on surface carries out roughening treatment and obtains.
7. a high manufacture method of getting the high voltage LED chip of light rate, comprises the following steps:
Step 1: adopt conventional method to prepare N-type nitride layer, luminescent layer, P type nitride layer, transparency conducting layer, N-type electrode, P-type electrode, metal conducting layer and passivation layer on substrate;
Step 2: make silica-based alligatoring template;
Step 3: one deck coat is prepared on the LED chip surface obtained in step 1, silica-based alligatoring template step 2 obtained is pressed on coat, and solidification, takes off alligatoring template, obtain high voltage LED chip of the present invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188014.5A CN104766914A (en) | 2015-04-20 | 2015-04-20 | High-lighting-rate high-voltage LED chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188014.5A CN104766914A (en) | 2015-04-20 | 2015-04-20 | High-lighting-rate high-voltage LED chip structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104766914A true CN104766914A (en) | 2015-07-08 |
Family
ID=53648638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510188014.5A Pending CN104766914A (en) | 2015-04-20 | 2015-04-20 | High-lighting-rate high-voltage LED chip structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104766914A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293535A (en) * | 2017-06-09 | 2017-10-24 | 电子科技大学 | A kind of LED chip structure based on flip-chip packaged |
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| CN111987200A (en) * | 2020-08-20 | 2020-11-24 | 厦门三安光电有限公司 | Light-emitting diode module, backlight module and display module |
| CN115249445A (en) * | 2022-08-16 | 2022-10-28 | 广州市建研零碳新材料科技有限公司 | Manufacturing method of ultrathin glass-based display module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819255A (en) * | 2005-02-03 | 2006-08-16 | 范朝阳 | Micro-led based high voltage ac/dc indicator lamp |
| CN103199186A (en) * | 2013-04-27 | 2013-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photoelectric device with roughening structure on surface of nut cap |
| CN103219445A (en) * | 2013-04-28 | 2013-07-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing cap layer thickened photoelectric device |
| CN103367610A (en) * | 2012-03-29 | 2013-10-23 | 比亚迪股份有限公司 | High-voltage LED chip and production method thereof |
| CN103762288A (en) * | 2014-01-23 | 2014-04-30 | 同辉电子科技股份有限公司 | Reflective arc type isolation groove for high-voltage LED |
| CN103811623A (en) * | 2012-11-09 | 2014-05-21 | Lg伊诺特有限公司 | Light emitting device |
-
2015
- 2015-04-20 CN CN201510188014.5A patent/CN104766914A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819255A (en) * | 2005-02-03 | 2006-08-16 | 范朝阳 | Micro-led based high voltage ac/dc indicator lamp |
| CN103367610A (en) * | 2012-03-29 | 2013-10-23 | 比亚迪股份有限公司 | High-voltage LED chip and production method thereof |
| CN103811623A (en) * | 2012-11-09 | 2014-05-21 | Lg伊诺特有限公司 | Light emitting device |
| CN103199186A (en) * | 2013-04-27 | 2013-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photoelectric device with roughening structure on surface of nut cap |
| CN103219445A (en) * | 2013-04-28 | 2013-07-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing cap layer thickened photoelectric device |
| CN103762288A (en) * | 2014-01-23 | 2014-04-30 | 同辉电子科技股份有限公司 | Reflective arc type isolation groove for high-voltage LED |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| CN107293535A (en) * | 2017-06-09 | 2017-10-24 | 电子科技大学 | A kind of LED chip structure based on flip-chip packaged |
| CN111987200A (en) * | 2020-08-20 | 2020-11-24 | 厦门三安光电有限公司 | Light-emitting diode module, backlight module and display module |
| CN115249445A (en) * | 2022-08-16 | 2022-10-28 | 广州市建研零碳新材料科技有限公司 | Manufacturing method of ultrathin glass-based display module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219352B (en) | LED combination chip of array architecture and preparation method thereof | |
| CN102969422B (en) | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure | |
| CN105720140A (en) | GaN-based LED (Light-Emitting Diode) vertical chip structure and preparation method | |
| CN101789477A (en) | Method for preparing all-side-wall saw-tooth coarsened light-emitting diode chip | |
| CN104766914A (en) | High-lighting-rate high-voltage LED chip structure | |
| CN101325234A (en) | Method for preparing GaN-based LED with photon crystal structure | |
| CN103117338A (en) | Production method of low-damage GaN-based LED (light-emitting diode) chip | |
| CN102723417B (en) | Light-emitting diode (LED) chip convenient to route and preparation method thereof | |
| CN101887938B (en) | LED chip and manufacturing method thereof | |
| CN102790045A (en) | Light emitting diode array and manufacturing method thereof | |
| CN111063778A (en) | Light-emitting diode structure | |
| CN105514230B (en) | GaN base LED vertical chip structure and preparation method thereof | |
| CN104638069A (en) | Vertical LED (Light-Emitting Diode) chip structure and manufacturing method thereof | |
| CN102637782A (en) | Method for manufacturing light-emitting diode with improved light extraction efficiency | |
| US20160104815A1 (en) | Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same | |
| CN108198923A (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| CN102479894A (en) | Light emitting diode of gallium nitride (GaN) based material and manufacturing method thereof | |
| CN104617191A (en) | LED vertical chip with current block structure and preparation method thereof | |
| CN102651438B (en) | Substrate, preparation method thereof and chip with substrate | |
| CN103137795A (en) | Preparation method for GaN-based light emitting diode (LED) chip unit cells | |
| CN105609605A (en) | Led chip and manufacturing method thereof | |
| CN103811596A (en) | GaN (gallium nitride)-based LED (light emitting diode) preparing method | |
| CN101286539A (en) | Gallium nitride based small-chip LED array structure and preparing method thereof | |
| CN102130224A (en) | Light-emitting diode and manufacturing method thereof | |
| KR101014339B1 (en) | Gallium nitride light emitting diode and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150708 |