CN103199186A - Photoelectric device with roughening structure on surface of nut cap - Google Patents
Photoelectric device with roughening structure on surface of nut cap Download PDFInfo
- Publication number
- CN103199186A CN103199186A CN2013101513448A CN201310151344A CN103199186A CN 103199186 A CN103199186 A CN 103199186A CN 2013101513448 A CN2013101513448 A CN 2013101513448A CN 201310151344 A CN201310151344 A CN 201310151344A CN 103199186 A CN103199186 A CN 103199186A
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- photoelectric device
- cap surface
- chip
- coat
- structure according
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Led Device Packages (AREA)
Abstract
The invention discloses a photoelectric device with a roughening structure on the surface of a nut cap. The photoelectric device comprises more than one photoelectric device chip, wherein the photoelectric device chips are fixed on a package substrate; and a coating layer with a non-smooth structure covers the surface of the photoelectric device. Further, the photoelectric device chips are fixed on the package substrate by silver paste or solid soldering flux, and at least the surface of the coating layer is in an up-and-down protuberant and/or depressed structure which comprises protuberant parts or depressed parts in regular or irregular shapes. According to the invention, through carrying out roughening treatment on the surface of the nut cap, the luminous efficiency of the photoelectric device is effectively enhanced, and the luminous quantity of the photoelectric device is increased, so that the performance of the photoelectric device is improved. The photoelectric device is low in cost, simple to operate and easy to implement on large scale.
Description
Technical field
The present invention relates to a kind of photoelectric device, relate in particular to a kind of surface coarsening structure of photoelectric device encapsulation block layer, belong to the optical semiconductor electrical domain.
Background technology
Photoelectric device refers to the class device that luminous energy and electric energy are changed mutually.Its kind is numerous, as: light-emitting diode (LED), solar cell, photodetector, laser (LD) etc.Wherein LED is the most widely used a kind of photoelectric device in the daily life.
But because GaN(about 2.5) etc. semiconductor refractive index higher, by the Snell law, can total reflection take place at the interface at two kinds of different materials (semiconductor and air) greater than the light of critical angle incident and can not outgoing, cause light in semi-conducting material, to come back reflective, from the outgoing of chip table edge, even absorbed by semi-conducting material and consume.In order to reduce refringence between semiconductor and the air, improve and get optical efficiency, common way is the organic substance that applies one deck epoxy resin or colloidal silica etc. at chip surface.Get optical efficiency even can improve like this, still have light to be limited in chip internal because of total reflection.Perhaps through total reflection repeatedly from the chip sides outgoing, light also can be decayed in chip inner total reflection process like this, and for the very little LED of lateral area ratio proportion, get optical efficiency and will become very low, this problem is especially outstanding in the LED of overlarge area chip.
Summary of the invention
In view of above the deficiencies in the prior art, the object of the present invention is to provide a kind of photoelectric device of cap surface alligatoring structure, it can effectively strengthen the photoelectric device light extraction efficiency, increases the amount of light of photoelectric device, and then promotes the photoelectric device performance.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of photoelectric device of cap surface alligatoring structure comprises an above photoelectric device chip, and described photoelectric device chip is fixed on the base plate for packaging, and described photoelectric device surface also covers the coat with non-flat configuration.
Further, described photoelectric device chip is fixed on the base plate for packaging through silver slurry or solid-state scolder.
Further, the positive and negative electrode of described photoelectric device chip is electrically connected with pressure welding area on the base plate for packaging by metal lead wire.
Further, described coat is coated in the photoelectric device chip surface.
Further, the surface of described at least coat has projection and/or the sunk structure that height rises and falls.
Further, described projection and/or sunk structure comprise having rule or erose lug boss or depressed part, and described regular shape comprises taper, the cylinder bodily form or cuboid.
Further, the described photoelectric device photoelectric device chip that comprises a plurality of series connection and/or be arranged in parallel.
Further, the material of described coat comprises the macromolecule organic with low-refraction, and described macromolecule organic comprises epoxy resin or silica gel.
Further, described photoelectric device comprises photodiode or laser.
Compared with prior art, the invention has the advantages that: only by cap surface is carried out roughening treatment, can effectively strengthen the photoelectric device light extraction efficiency; increase the amount of light of photoelectric device, and then promote the photoelectric device performance, with low cost; simple to operate, be easy to scale and implement.
Description of drawings
Fig. 1 a is one of working state schematic representation of a kind of alligatoring structure that is formed by silica gel;
Fig. 1 b be a kind of alligatoring structure that is formed by silica gel working state schematic representation two;
Fig. 2 a is the front view of block alligatoring structured light electric device in the embodiment of the invention 1;
Fig. 2 b is the cross-sectional view of block alligatoring structured light electric device in the embodiment of the invention 1;
Fig. 3 is the front view of block alligatoring structured light electric device in the embodiment of the invention 2;
Fig. 4 a is the front view of block alligatoring structured light electric device in the embodiment of the invention 3;
Fig. 4 b is the cross-sectional view of a kind of alligatoring structured light electric device of blocking a shot in the embodiment of the invention 3;
Fig. 4 c is the cross-sectional view of another kind of block alligatoring structured light electric device in the embodiment of the invention 3;
Fig. 5 a is the front view of block alligatoring structured light electric device in the embodiment of the invention 4;
Fig. 5 b is the cross-sectional view of block alligatoring structured light electric device in the embodiment of the invention 4.
Embodiment
As previously shown, in view of deficiency of the prior art, the present invention aims to provide a kind of photoelectric device of cap surface alligatoring structure, uses the amount of light that promotes photoelectric device light extraction efficiency and photoelectric device.
Of the present invention one comparatively in the embodiment preferred, the photoelectric device of this cap surface alligatoring structure can comprise one or more photoelectric device chips, a base plate for packaging, a coat.
Further, aforementioned lights electric device chip can be fixed on the base plate for packaging through silver slurry or solid-state scolder, and its both positive and negative polarity links to each other with pressure welding area on the base plate for packaging by metal lead wire.
Further, coat is coated in the photoelectric device chip surface.
A nearlyer step ground, coat can be treated to the raised or sunken structure that the surface height rises and falls.
A nearlyer step ground, these raised or sunken structures comprise centrum, cylinder, cuboid or irregular figure etc.
A nearlyer step ground, the size of these raised or sunken structures can be set according to real needs.
A nearlyer step ground, the cycle of these raised or sunken structures can be set according to real needs, and perhaps arranging does not have rule.
Further, coat comprises the less macromolecule organics of refractive index such as epoxy resin, colloidal silica.
Further, photoelectric device comprises photodiode (LED), laser (LD) etc.
Further, the shape of photoelectric device can be square, rectangle, circle or irregular figure.
A nearlyer step ground, the connected mode of a plurality of photoelectric device chips can series, parallel or the mixing connected mode that has of series and parallel etc.
Postscript is analyzed from principle, is example with the colloidal silica, and its refractive index is 1.4, it and the air interface angle of total reflection are about 46 °, as Fig. 1 a, in coat, suppose light B with ° incident coat surface, angle [alpha]=50, because incidence angle is greater than the angle of total reflection, light reflected back coat inside; Be slanted through the alligatoring structure side wall if same and coat surface is the light A of 50 ° of angles, calculating incidence angle according to geometric relationship is 40 °, less than the angle of total reflection, therefore can enter air by the outgoing coat.Conversely, consult Fig. 1 b, suppose light with angle [alpha]=40 ° incident clad surface, because incidence angle is less than the angle of total reflection, beam projecting enters air; If the light A of parallel rays B is slanted through the alligatoring structure side wall, calculating incidence angle according to geometric relationship is 50 °, and total reflection takes place, and through being incident to the coat surface again after the reflection for several times, goes out to inject air.
According to above analysis, the surface coarsening structure can improve photoelectric device and reach optical efficiency.
For substantial structure feature and the beneficial effect of the photoelectric device that makes a kind of cap surface alligatoring of the present invention structure is easier to understand, below in conjunction with some embodiment and accompanying drawing thereof technical scheme of the present invention is done further nonrestrictive detailed description.
Embodiment 1Consult Fig. 2 a, this block alligatoring structured light electric device is by base plate for packaging 21, led chip 24,25, anode tap 26, cathode leg 27, anode pressure welding area 22, negative electrode pressure welding area 23, and formation such as coat 28.Led chip is fixed on the base plate for packaging 21 with silver slurry or scolder, by anode tap 26 and cathode leg 27 with active area 24 tops of chip and negative electrode draw-out area 25 respectively with substrate on anode pressure welding area 22 link to each other with negative electrode pressure welding area 23.And apply organic coat layers 28 such as epoxy resin or colloidal silica at chip.
Consult Fig. 2 b again, in this block alligatoring structured light electric device, led chip is positioned at base plate for packaging 21 1 sides, and fixes with silver slurry or scolder.Chip includes source region 24, negative electrode draw-out area 25.By anode tap 26 active area 24 tops are connected with anode pressure welding area 22, by cathode leg 27 negative electrode draw-out area 25 are connected with the negative electrode pressure welding area.Be coated with one deck coat 28 at chip surface, and produce cylindrical protrusions 29 to reduce total reflection, improve and get optical efficiency.
Embodiment 2Consult Fig. 3, this block alligatoring structured light electric device is by base plate for packaging 31, led chip 34,35, anode tap 36, cathode leg 37, anode pressure welding area 32, negative electrode pressure welding area 33, and formation such as coat 38.Led chip is fixed on the base plate for packaging 31 with silver slurry or scolder, by anode tap 36 and cathode leg 37 with active area 34 tops of chip and negative electrode draw-out area 35 respectively with substrate on anode pressure welding area 32 link to each other with negative electrode pressure welding area 33.Apply organic coat layers 38 such as epoxy resin or colloidal silica at chip, and produce the cube projection to reduce total reflection, improve and get optical efficiency.
Embodiment 3Consult Fig. 4 a, this block alligatoring structured light electric device is by base plate for packaging 41, led chip 44,45, anode tap 46, cathode leg 47, anode pressure welding area 42, negative electrode pressure welding area 33, and formation such as coat 38.Led chip is fixed on the base plate for packaging 41 with silver slurry or scolder, by anode tap 46 and cathode leg 47 with active area 44 tops of chip and negative electrode draw-out area 45 respectively with substrate on anode pressure welding area 42 link to each other with negative electrode pressure welding area 43.Apply organic coat layers 48 such as epoxy resin or colloidal silica at chip.
See also Fig. 4 b again, in a kind of implementation at present embodiment, led chip is positioned at base plate for packaging 41 1 sides, and fixes with silver slurry or scolder.Chip includes source region 44, negative electrode draw-out area 45.By anode tap 46 active area 44 tops are connected with anode pressure welding area 42, by cathode leg 47 negative electrode draw-out area 45 are connected with the negative electrode pressure welding area.Be coated with one deck coat 48 at chip surface, and produce conical protrusions 49 to reduce total reflection, improve and get optical efficiency.
Please continue to consult Fig. 4 c, in the another kind of implementation of present embodiment, led chip is positioned at base plate for packaging 411 1 sides, and fixes with silver slurry or scolder.Chip includes source region 414, negative electrode draw-out area 415.By anode tap 416 active area 414 tops are connected with anode pressure welding area 412, by cathode leg 417 negative electrode draw-out area 415 are connected with the negative electrode pressure welding area.Be coated with one deck coat 418 at chip surface, and produce conical shaped depression 419 to reduce total reflection, improve and get optical efficiency.
Embodiment 4Consult Fig. 5 a, this block alligatoring structured light electric device is by the LED50 of a plurality of series connection, a base plate for packaging 51, anode pressure welding area 54, negative electrode pressure welding area 55, anode tap 56, cathode leg 57, series connection lead-in wire 58 between LED, coat 59 formations such as grade.Single led chip is by the cathode leg district 53 of series connection lead-in wire 58 with front and back LED, and active area top 54 is connected to form series network.With anode tap 56 the active area top 52 of anode pressure welding area 54 with cascaded structure one end LED is connected, with cathode leg 57 the cathode leg district 53 of negative electrode pressure welding area 55 with cascaded structure other end LED is connected.Apply organic coat layers 59 such as epoxy resin or colloidal silica on the whole LED chip region.
See also Fig. 5 b again, in this block alligatoring structured light electric device, led chip 50 is positioned at a side of base plate for packaging 51, and a plurality of led chips couple together by series connection lead-in wire 58.Active area 52 tops of cascaded structure one end LED are connected with anode pressure welding area 54 by anode tap 56, negative electrode draw-out area 53 usefulness of other end LED cathode leg 57 be connected with negative electrode pressure welding area 55.At organic coat layers 59 such as whole LED chip region surface-coated epoxy resin or colloidal silicas, and produce cylindrical protrusions 591 raisings and get optical efficiency.By the explanation of above-described embodiment as seen, coat still can be made into the cube projection, centrum projection, structures such as centrum depression, its architectural feature and implement die similar to above-mentioned several embodiment of principle and repeat no more.In addition, a plurality of led chips can adopt parallel-connection structure or mix syndeton.
It is pointed out that a plurality of application examples shown in above are intended to deepen the understanding to substantial structure of the present invention and beneficial effect, do not constitute any limitation protection range.In every case equivalents and the equivalence of carrying out for above-described embodiment replaced, and can realize the technical scheme of identical creation purpose with the present invention, all drops in the scope that this case asks for protection.
Claims (10)
1. the photoelectric device of a cap surface alligatoring structure comprises an above photoelectric device chip, and described photoelectric device chip is fixed on the base plate for packaging, it is characterized in that, described photoelectric device surface also covers the coat with non-flat configuration.
2. the photoelectric device of cap surface alligatoring structure according to claim 1 is characterized in that, described photoelectric device chip is fixed on the base plate for packaging through silver slurry or solid-state scolder.
3. the photoelectric device of cap surface alligatoring structure according to claim 1 and 2 is characterized in that, the positive and negative electrode of described photoelectric device chip is electrically connected with pressure welding area on the base plate for packaging by metal lead wire.
4. the photoelectric device of cap surface alligatoring structure according to claim 1 is characterized in that, described coat is coated in the photoelectric device chip surface.
5. according to the photoelectric device of claim 1 or 4 described cap surface alligatoring structures, it is characterized in that the surface of described at least coat has projection and/or the sunk structure that height rises and falls.
6. the photoelectric device of cap surface alligatoring structure according to claim 5 is characterized in that, described projection and/or sunk structure comprise having rule or erose lug boss or depressed part.
7. the photoelectric device of cap surface alligatoring structure according to claim 6 is characterized in that, described regular shape comprises taper, the cylinder bodily form or cuboid.
8. the photoelectric device of cap surface alligatoring structure according to claim 1 is characterized in that, the photoelectric device chip that described photoelectric device comprises a plurality of series connection and/or is arranged in parallel.
9. according to the photoelectric device of claim 1 or 4 described cap surface alligatoring structures, it is characterized in that the material of described coat comprises the macromolecule organic with low-refraction, described macromolecule organic comprises epoxy resin or silica gel.
10. the photoelectric device of cap surface alligatoring structure according to claim 1 is characterized in that, described photoelectric device comprises photodiode or laser.
Priority Applications (1)
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CN2013101513448A CN103199186A (en) | 2013-04-27 | 2013-04-27 | Photoelectric device with roughening structure on surface of nut cap |
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CN2013101513448A CN103199186A (en) | 2013-04-27 | 2013-04-27 | Photoelectric device with roughening structure on surface of nut cap |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104766914A (en) * | 2015-04-20 | 2015-07-08 | 电子科技大学 | High-lighting-rate high-voltage LED chip structure |
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Application publication date: 20130710 |