CN201004466Y - A LED encapsulation structure with high light output rate - Google Patents

A LED encapsulation structure with high light output rate Download PDF

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Publication number
CN201004466Y
CN201004466Y CNU2006200154890U CN200620015489U CN201004466Y CN 201004466 Y CN201004466 Y CN 201004466Y CN U2006200154890 U CNU2006200154890 U CN U2006200154890U CN 200620015489 U CN200620015489 U CN 200620015489U CN 201004466 Y CN201004466 Y CN 201004466Y
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CN
China
Prior art keywords
led
packaging body
light
depressed part
encapsulating structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2006200154890U
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Chinese (zh)
Inventor
胡建华
龚伟斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Refond Optoelectronics Co Ltd
Original Assignee
RUIFENG PHOTOELECTRONIC CO Ltd SHENZHEN CITY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CNU2006200154890U priority Critical patent/CN201004466Y/en
Application granted granted Critical
Publication of CN201004466Y publication Critical patent/CN201004466Y/en
Anticipated expiration legal-status Critical
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Abstract

The utility model relates to an encapsulation structure of LED which comprises an LED encapsulation body as well as an LED chip that is arranged inside the LED encapsulation body; a cupped part and a convex part are formed on the surface of the encapsulation body making the surface of the encapsulation body has an effect of coarsening and giving the ray that has an angle of reflection larger than angle of total reflection a chance to shoot directly, thus can reduce the reflecting times of the ray in the epoxide resin medium inside the encapsulation body, and also can reduce the probability of being absorbed so as to improve the total glaring rate of the product; the glaring can be improved by 15 percent or so after being processed on normal SMD LED module.

Description

A kind of LED encapsulating structure of high light-emitting rate
Technical field
The utility model relates to LED, particularly relates to a kind of LED encapsulating structure with high light-emitting rate.
Background technology
LED develops and progressively moves towards the marketization from nineteen sixties, and its encapsulation technology is also being updated and developed, and by being developed to stent-type epoxy packages and surface-adhered type encapsulation with the glass tube encapsulation the earliest, makes that low-power LED obtains to use widely.Single-chip 1W, 3W, 5W even more high-capacity LED industrialization and introducing to the market at present, this makes the application surface of ultra-high brightness LED constantly enlarge, market segment by special lighting, progressively stride forward to general lighting market, but LED will develop at lighting field, and key will be brought up to its luminous efficiency, luminous flux the level of existing lighting source.Get various effort such as optical efficiency, reduction thermal resistance except the raising of being done at present and improve the photoelectric conversion efficiency of device on chip, thereby obtain outside the higher luminous flux, the encapsulation technology of device is also held the balance.Influence the solution that LED is widely used in lighting field and mainly contain the light extraction efficiency that improves overall package, reduce overall thermal resistance and improve reliability of products etc.
At present the primary structure of the encapsulation of LED have that straight cutting, paster, surface perfusion, side are luminous, module etc.; And in subsequent applications required interpolation secondary optics design, waterproof requirement etc., all be faced with the problem of light extraction efficiency, because led chip is encapsulated in epoxy resin other materials such as (or etc.) silica gel, the refractive index of these materials is between 1.3-1.6, the refractive index of air is about 1, the light that chip sends incides in the air (or the design of other secondary optics, incide air then) of low-refraction from the material of high index of refraction, and the phenomenon that all will have total reflection takes place.As shown in Figure 3, it comprises a led chip 1a and a LED packaging body, LED is reduced to point-source of light, when the surperficial 21a that is mapped to packaging body the light epoxy resin medium 22a big from refractive index injects in the little air dielectric of refractive index again, with some light by total reflection, its angle of total reflection is θ, when the emergent ray that surpasses angle of total reflection θ will be reflected to product inside, or through repeatedly penetrating again after the reflection, or be absorbed, form the loss of a part of light like this, thereby have influence on the light extraction efficiency of product, therefore whole product light extraction efficiency is lower, is unfavorable for the use of general lighting.
The utility model content
Technical problem to be solved in the utility model is to overcome the existing low problem of LED encapsulating structure light emission rate, provides a kind of light emission rate high LED encapsulating structure.
For solving the problems of the technologies described above, the technical solution of the utility model is: the encapsulating structure of a kind of LED, and it comprises-and LED packaging body and is arranged at the led chip in the LED packaging body, and described packaging body surface is formed with at least one depressed part or at least one protuberance.
More specifically, described depressed part and protrusion are taper or prism-shaped.
More specifically, the bottom of the top of described depressed part and protuberance is polygon or the circle that is surrounded by at least three limits.
More specifically, described depressed part or protuberance and packaging body are integrally formed.
More specifically, described depressed part or protuberance are by etching or the laser treatment surface at packaging body.
Compared with prior art, the utlity model has following beneficial effect: the utility model provides a kind of surface at the LED packaging body that depressed part is set or protuberance makes envelope surface alligatoring, when light is surperficial by the epoxy resin medium arrival packaging body of package interior, depressed part or protuberance provide the chance of direct outgoing for the normal light that surpasses the angle of total reflection, can reduce the number of times of the reflection in the epoxy resin medium of light in packaging body like this, also reduced absorbed possibility, thereby can improve the whole light extraction efficiency of product, after handling on the mould of normal SMD LED, its bright dipping meeting is higher by about 15% than normal encapsulation.
Description of drawings
Fig. 1 is the structural representation of the utility model LED encapsulating structure first embodiment;
Fig. 2 is that the utility model LED encapsulating structure first embodiment chips light penetrates schematic diagram;
Fig. 3 is the structural representation of the utility model LED encapsulating structure second embodiment;
Fig. 4 is that the utility model LED encapsulating structure second embodiment chips light penetrates schematic diagram;
Fig. 5 is that LED encapsulating structure chips light penetrates schematic diagram in the prior art.
Embodiment
As shown in Figure 1, the utility model relates to a kind of LED encapsulating structure of high light-emitting rate, it comprises that a packaging body 2 and is arranged at the led chip 1 in the LED packaging body 2, described packaging body 2 surfaces 21 are formed with some protuberances 3, each protuberance 3 is taper, in the present embodiment, the bottom of each protuberance 3 is the polygons that surrounded by at least three limits.
As shown in Figure 2, LED is reduced to point-source of light, when the surface 21 that is mapped to LED packaging body 2 the light epoxy resin medium 22 big from refractive index is injected in the little air dielectric of refractive index again, with some light by total reflection, its angle of total reflection is θ, but, when a part of light is injected into the protuberance 3 that the surface 21 of packaging body 2 is provided with, incidence angle is θ 1, angle of reflection θ 1 is less than normal angle of total reflection θ, light will directly be refracted in the air dielectric, can reduce the number of times of reflection in the epoxy resin medium 22 of light in packaging body like this, also reduce absorbed possibility, thereby can improve the whole light extraction efficiency of product, after handling on the mould of normal element pasted on surface (SMD) LED, its light emission rate can be higher by about 15% than normal encapsulation.
Seeing also Fig. 3, is second embodiment of the present utility model, and the difference of itself and first embodiment is, packaging body surface 21 is formed with some depressed parts 4 in this enforcement, each depressed part 4 is taper, and in the present embodiment, the top of depressed part 4 is the polygons that surrounded by at least three limits.As shown in Figure 4, when a part of light is injected into the depressed part 4 that the surface 21 of packaging body 2 is provided with, its incidence angle is θ 2, incidence angle θ 2 is less than angle of total reflection θ, light will directly be refracted in the air dielectric, the same like this number of times that can reduce reflection in the epoxy resin medium 22 of light in packaging body has also reduced absorbed possibility, thereby can improve the whole light extraction efficiency of product.
Be appreciated that as other execution modes of the present utility model, also can form some protuberances 3 and depressed part 4 in packaging body 2 surfaces 21 simultaneously.Protuberance 3 in the various embodiments described above and depressed part 4 can be integrally formed by the surface 21 of encapsulating mould and packaging body 2, also can be with finished product by processing mode formation again.
The surface treatment that also can be used for other LED downstream product in technical scheme described in the utility model reaches the high effect of light emission rate.

Claims (5)

1, the encapsulating structure of a kind of LED, it comprises that a LED packaging body and is arranged at the led chip in the LED packaging body, it is characterized in that: described packaging body surface is formed with at least one depressed part or at least one protuberance.
2, the encapsulating structure of LED as claimed in claim 1 is characterized in that: described depressed part and protrusion are taper or prism-shaped.
3, the encapsulating structure of LED according to claim 2 is characterized in that: described depressed part and protuberance are polyhedron, and the top of described depressed part and the bottom of protuberance are polygon or the circles that is surrounded by at least three limits.
4, according to the encapsulating structure of claim 1,2 or 3 described LED, it is characterized in that: described depressed part or protuberance and packaging body are integrally formed.
5, the encapsulating structure of LED according to claim 3 is characterized in that: described concave polyhedron or convex polyhedron are by etching or the laser treatment surface at packaging body.
CNU2006200154890U 2006-10-27 2006-10-27 A LED encapsulation structure with high light output rate Expired - Lifetime CN201004466Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2006200154890U CN201004466Y (en) 2006-10-27 2006-10-27 A LED encapsulation structure with high light output rate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2006200154890U CN201004466Y (en) 2006-10-27 2006-10-27 A LED encapsulation structure with high light output rate

Publications (1)

Publication Number Publication Date
CN201004466Y true CN201004466Y (en) 2008-01-09

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CNU2006200154890U Expired - Lifetime CN201004466Y (en) 2006-10-27 2006-10-27 A LED encapsulation structure with high light output rate

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101887939A (en) * 2010-05-24 2010-11-17 晶科电子(广州)有限公司 Packaging structure and packaging method for improving LED external quantum efficiency
CN102169930A (en) * 2011-03-07 2011-08-31 山东大学 Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
CN103137842A (en) * 2011-11-28 2013-06-05 隆达电子股份有限公司 Light emitting diode assembly
CN103199186A (en) * 2013-04-27 2013-07-10 中国科学院苏州纳米技术与纳米仿生研究所 Photoelectric device with roughening structure on surface of nut cap

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101887939A (en) * 2010-05-24 2010-11-17 晶科电子(广州)有限公司 Packaging structure and packaging method for improving LED external quantum efficiency
CN102169930A (en) * 2011-03-07 2011-08-31 山东大学 Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
CN102169930B (en) * 2011-03-07 2012-09-19 山东大学 Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
CN103137842A (en) * 2011-11-28 2013-06-05 隆达电子股份有限公司 Light emitting diode assembly
CN103199186A (en) * 2013-04-27 2013-07-10 中国科学院苏州纳米技术与纳米仿生研究所 Photoelectric device with roughening structure on surface of nut cap

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: Shenzhen Nanshan District City, Guangdong province 518000 White Pine Road Baiwang letter Industrial Park two District Sixth.

Patentee after: Shenzhen Refond Optoelectronics Co., Ltd.

Address before: 1, building 518109, B2 building, Heping Science Park, Heping West Road, Longhua, Shenzhen, Guangdong

Patentee before: Ruifeng Photoelectronic Co., Ltd., Shenzhen City

CX01 Expiry of patent term

Granted publication date: 20080109

EXPY Termination of patent right or utility model