CN204732450U - A kind of high luminous efficiency diode - Google Patents
A kind of high luminous efficiency diode Download PDFInfo
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- CN204732450U CN204732450U CN201520367731.XU CN201520367731U CN204732450U CN 204732450 U CN204732450 U CN 204732450U CN 201520367731 U CN201520367731 U CN 201520367731U CN 204732450 U CN204732450 U CN 204732450U
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- light
- backlight unit
- reflector
- emitting diode
- diode chip
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Abstract
The utility model discloses a kind of high luminous efficiency diode, comprise shell, pedestal, fluorescence coating, light-emitting diode chip for backlight unit, magnetic masking layer, reflector, encapsulating material, first electrode, second electrode, filter layer, light transmission casing and micro lens, described outer casing bottom is provided with pedestal, pedestal is provided with reflector, light-emitting diode chip for backlight unit is located at bottom reflector, reflector inwall is provided with reflective metal layer, light-emitting diode chip for backlight unit outer cladding fluorescence coating, magnetic masking layer is provided with between fluorescence coating and light-emitting diode chip for backlight unit, light transmission casing is provided with above encapsulating material, light transmission casing is provided with the multiple micro lens in order to printing opacity on the surface.The utility model is reflective because the inwall of described reflector has reflective metal layer to add, and can launch to different deflections, by can reduce the shooting angle of light in light transmission casing surface micro lens structure, reduce the occurrence probability of total reflection, promote the light extraction efficiency of LED, but do not affect the macrostructure of LED, simple and practical, and low cost.
Description
Technical field
The utility model relates to a kind of semiconductor apparatus field, specifically a kind of high luminous efficiency diode.
Background technology
Light-emitting diode (Light Emitting Diode, LED) is a kind of semiconductor subassembly that can be luminous, compared with conventional light source, has luminous efficiency high, long service life, not the advantage that cannot compare of the conventional light source such as cracky.Semiconductor lighting industry is risen in the whole world, and LED (light-emitting diode) becomes the focus attracted the attention of millions of people.Many fields in daily life obtain general accreditation, are used widely in electronic product, such as, as indicator light in circuit and instrument, and display backlight etc.Along with LED is more and more applied to room lighting, but LED really will can replace incandescent lamp and fluorescent lamp enters general illumination market, and the reduction of its cost also depends on the lifting of light efficiency.
Utility model content
The purpose of this utility model is to provide a kind of high luminous efficiency diode, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:
A kind of high luminous efficiency diode, comprise shell, pedestal, fluorescence coating, light-emitting diode chip for backlight unit, magnetic masking layer, reflector, encapsulating material, first electrode, second electrode, filter layer, light transmission casing and micro lens, described outer casing bottom is provided with pedestal, pedestal is provided with reflector, light-emitting diode chip for backlight unit is located at bottom reflector, reflector inwall is provided with reflective metal layer, described first electrode has the first paster Ji Dao, and the first paster Ji Dao has the first lead-in wire be connected as a single entity with it, described second electrode has the second paster Ji Dao, and the second paster Ji Dao has the second lead-in wire be connected as a single entity with it, described first paster Ji Dao and the second paster Ji Dao is inserted into the two ends of pedestal, the positive pole of described light-emitting diode chip for backlight unit is connected with the first paster Ji Dao by wire, the negative pole of light-emitting diode chip for backlight unit is connected with the second paster Ji Dao by wire, light-emitting diode chip for backlight unit outer cladding fluorescence coating, magnetic masking layer is provided with between fluorescence coating and light-emitting diode chip for backlight unit, encapsulating material is provided with in reflector, and the coated diode chip for backlight unit of encapsulating material, fluorescence coating and magnetic masking layer, light transmission casing is provided with above encapsulating material, light transmission casing inwall is provided with filter layer, light transmission casing is provided with the multiple micro lens in order to printing opacity on the surface.
As further program of the utility model: described shell is that insulation good heat conducting material is made.
As the utility model further scheme: described reflective metal layer is reflective aluminium layer, or it is reflective silver layer.
As the utility model further scheme: described encapsulating material is transparent encapsulation material.
Compared with prior art, the beneficial effects of the utility model are: the utility model has reflective metal layer due to the inwall of described reflector, and reflective metal layer can collect the light that the side of light-emitting diode chip for backlight unit and edge send, add reflective, and can launch to different deflections, magnetic masking layer reduces electromagnetic radiation to human injury, by in light transmission casing surface micro lens structure, this micro lens structure adopts glue that is same with packaging plastic aqueous phase or close refractive index, the shooting angle of light can be reduced, reduce the occurrence probability of total reflection, promote the light extraction efficiency of LED, but do not affect the macrostructure of LED, simple and practical, and low cost.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of high luminous efficiency diode.
Fig. 2 is a kind of vertical view of high luminous efficiency diode.
In figure: 1, shell, 2, pedestal, 3, fluorescence coating, 4, light-emitting diode chip for backlight unit, 5, magnetic masking layer, 6, reflector, 7, encapsulating material, the 8, first electrode, the 81, first paster Ji Dao, 82, the first lead-in wire, the 9, second electrode, the 91, second paster Ji Dao, 92, the second lead-in wire, 10, filter layer, 11, light transmission casing, 12, micro lens, 13, reflective metal layer.
Embodiment
Be described in more detail below in conjunction with the technical scheme of embodiment to this patent.
Refer to Fig. 1-2, a kind of high luminous efficiency diode, comprise shell 1, pedestal 2, fluorescence coating 3, light-emitting diode chip for backlight unit 4, magnetic masking layer 5, reflector 6, encapsulating material 7, first electrode 8, second electrode 9, filter layer 10, light transmission casing 11 and micro lens 12, pedestal 2 is provided with bottom described shell 1, shell 1 is that insulation good heat conducting material is made, safety is beneficial to heat radiation, pedestal 2 is provided with reflector 6, light-emitting diode chip for backlight unit 4 is located at bottom reflector 6, reflector 6 inwall is provided with reflective metal layer 13, described reflective metal layer 13 is reflective aluminium layer, or be reflective silver layer, described first electrode 8 has the first paster base island 81, and there is the first lead-in wire 81 be connected as a single entity with it on the first paster base island 81, described second electrode 9 has the second paster base island 91, and there is the second lead-in wire 92 be connected as a single entity with it on the second paster base island 91, described first paster base island 81 and the second paster base island 91 are inserted into the two ends of pedestal 2, the positive pole of described light-emitting diode chip for backlight unit 4 is connected with the first paster base island 81 by wire, the negative pole of light-emitting diode chip for backlight unit 4 is connected with the second paster base island 91 by wire, light-emitting diode chip for backlight unit 4 outer cladding fluorescence coating 3, magnetic masking layer 5 is provided with between fluorescence coating 3 and light-emitting diode chip for backlight unit 4, reduce electromagnetic radiation to human injury, encapsulating material 7 is provided with in reflector 6, and the coated diode chip for backlight unit 4 of encapsulating material 7, fluorescence coating 3 and magnetic masking layer 5, described encapsulating material 7 is transparent encapsulation material, described encapsulating material 7 can select epoxy resin, the material such as silica gel or polymethyl methacrylate, light transmission casing 11 is provided with above encapsulating material 7, light transmission casing 11 inwall is provided with filter layer 10, light transmission casing 11 is provided with the multiple micro lens 12 in order to printing opacity on the surface.
Operation principle of the present utility model is: after the light of the utility model luminescence chip outgoing is irradiated to fluorescence coating, magnetic masking layer reduces electromagnetic radiation to human injury, reflective metal layer through reflector inwall reflects, filtered by filter layer, by in light transmission casing surface micro lens structure, this micro lens structure adopts glue that is same with packaging plastic aqueous phase or close refractive index, the shooting angle of light can be reduced, reduce the occurrence probability of total reflection, promote the light extraction efficiency of LED, but do not affect the macrostructure of LED, simple and practical, and low cost.
Above the better embodiment of this patent is explained in detail, but this patent is not limited to above-mentioned execution mode, in the ken that one skilled in the relevant art possesses, can also makes a variety of changes under the prerequisite not departing from this patent aim.
Claims (4)
1. a high luminous efficiency diode, comprise shell (1), pedestal (2), fluorescence coating (3), light-emitting diode chip for backlight unit (4), magnetic masking layer (5), reflector (6), encapsulating material (7), first electrode (8), second electrode (9), filter layer (10), light transmission casing (11) and micro lens (12), it is characterized in that, described shell (1) bottom is provided with pedestal (2), pedestal (2) is provided with reflector (6), light-emitting diode chip for backlight unit (4) is located at reflector (6) bottom, reflector (6) inwall is provided with reflective metal layer (13), described first electrode (8) has the first paster Ji Dao (81), and the first paster Ji Dao (81) has the first lead-in wire (81) be connected as a single entity with it, described second electrode (9) has the second paster Ji Dao (91), and the second paster Ji Dao (91) has the second lead-in wire (92) be connected as a single entity with it, described first paster Ji Dao (81) and the second paster Ji Dao (91) is inserted into the two ends of pedestal (2), the positive pole of described light-emitting diode chip for backlight unit (4) is connected with the first paster Ji Dao (81) by wire, the negative pole of light-emitting diode chip for backlight unit (4) is connected with the second paster Ji Dao (91) by wire, light-emitting diode chip for backlight unit (4) outer cladding fluorescence coating (3), magnetic masking layer (5) is provided with between fluorescence coating (3) and light-emitting diode chip for backlight unit (4), encapsulating material (7) is provided with in reflector (6), and encapsulating material (7) coated diode chip for backlight unit (4), fluorescence coating (3) and magnetic masking layer (5), encapsulating material (7) top is provided with light transmission casing (11), light transmission casing (11) inwall is provided with filter layer (10), light transmission casing (11) is provided with the multiple micro lens (12) in order to printing opacity on the surface.
2. a kind of high luminous efficiency diode according to claim 1, is characterized in that, described shell (1) is that insulation good heat conducting material is made.
3. a kind of high luminous efficiency diode according to claim 1, is characterized in that, described reflective metal layer (13) is reflective aluminium layer, or is reflective silver layer.
4. a kind of high luminous efficiency diode according to claim 1, is characterized in that, described encapsulating material (7) is transparent encapsulation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520367731.XU CN204732450U (en) | 2015-06-01 | 2015-06-01 | A kind of high luminous efficiency diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520367731.XU CN204732450U (en) | 2015-06-01 | 2015-06-01 | A kind of high luminous efficiency diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204732450U true CN204732450U (en) | 2015-10-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520367731.XU Expired - Fee Related CN204732450U (en) | 2015-06-01 | 2015-06-01 | A kind of high luminous efficiency diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204732450U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932951A (en) * | 2017-04-14 | 2017-07-07 | 深圳市华星光电技术有限公司 | LED lamp source and its manufacture method, backlight module |
| US11195787B2 (en) | 2016-02-17 | 2021-12-07 | Infineon Technologies Ag | Semiconductor device including an antenna |
-
2015
- 2015-06-01 CN CN201520367731.XU patent/CN204732450U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11195787B2 (en) | 2016-02-17 | 2021-12-07 | Infineon Technologies Ag | Semiconductor device including an antenna |
| CN106932951A (en) * | 2017-04-14 | 2017-07-07 | 深圳市华星光电技术有限公司 | LED lamp source and its manufacture method, backlight module |
| WO2018188151A1 (en) * | 2017-04-14 | 2018-10-18 | 深圳市华星光电技术有限公司 | Led light source, manufacturing method therefor, and backlight module |
| US10424700B2 (en) | 2017-04-14 | 2019-09-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd | LED lamp sources, and the manufacturing methods and the backlight modules thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151028 Termination date: 20160601 |