CN201796947U - Light emitting diode capable of increasing external quantum efficiency - Google Patents

Light emitting diode capable of increasing external quantum efficiency Download PDF

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Publication number
CN201796947U
CN201796947U CN2010201993979U CN201020199397U CN201796947U CN 201796947 U CN201796947 U CN 201796947U CN 2010201993979 U CN2010201993979 U CN 2010201993979U CN 201020199397 U CN201020199397 U CN 201020199397U CN 201796947 U CN201796947 U CN 201796947U
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China
Prior art keywords
glue
line
light
emitting diode
led chip
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Expired - Lifetime
Application number
CN2010201993979U
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Chinese (zh)
Inventor
苏宏波
邢其彬
杨丽敏
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Shenzhen Jufei Optoelectronics Co Ltd
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Shenzhen Jufei Optoelectronics Co Ltd
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Priority to CN2010201993979U priority Critical patent/CN201796947U/en
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Abstract

The utility model discloses a light emitting diode capable of increasing external quantum efficiency, which comprises an LED chip and a support with a reflecting cavity. The LED chip is fixed to the bottom of the reflecting cavity, a first adhesive layer and a second adhesive layer are filled in the reflecting cavity, the LED chip is covered by the first adhesive layer, the upper surface of the first adhesive layer is a convex spherical surface, the second adhesive layer is covered on the first adhesive layer, and the refractive index of the second adhesive layer is smaller than that of the first adhesive layer. By the aid of the refractive index difference between different light-transmission media, total reflection of light emitting to the different media is reduced obviously, the external quantum efficiency of the LED is increased effectively, and light energy loss is reduced.

Description

A kind of light-emitting diode that improves external quantum efficiency
Technical field
The utility model relates to a kind of LED (light-emitting diode), relates in particular to a kind of light-emitting diode that improves external quantum efficiency.
Background technology
External quantum efficiency is to estimate an important indicator of the electricity conversion of LED, has reflected the luminous intensity and the brightness of LED product.Along with the continuous expansion of application, market is more and more higher to the brightness requirement of LED, and this just requires LED to have higher electricity conversion and lower light decay.
At present, the mode of the luminous intensity of raising LED mainly comprises: the brightness of raising luminescence chip, change supporting structure, increase reflector etc.Brightness lifting along with luminescence chip, its internal quantum efficiency improves constantly, has promoted to a certain extent in conjunction with the improvement of supporting structure the luminous intensity of LED, but because the encapsulation volume of LED is less, being subjected to structural limitations can't all guide the efficient luminous energy and the heat of luminescence chip.Existing encapsulating structure is all at encapsulation mediums such as cavity filling gel layer that is used for holding luminescence chip or fluorescence coatings, the most of luminous energy that makes luminescence chip in encapsulation medium through being depleted after the total reflection repeatedly and being converted into heat, bigger heat causes the internal quantum efficiency of luminescence chip to reduce again, correspondingly influenced the external quantum efficiency of LED, cause light decay bigger, luminous intensity is not high.
The utility model content
The main technical problems to be solved in the utility model is that a kind of light-emitting diode that reduces light decay, improves external quantum efficiency is provided.
For solving the problems of the technologies described above, the utility model provides a kind of light-emitting diode that improves external quantum efficiency, the support that comprises led chip and have reflection cavity, described led chip is fixed on the bottom of described reflection cavity, fills first glue-line and second glue-line in the described reflection cavity;
Described first glue-line covers on the led chip, and the upper surface of described first glue-line is the sphere of projection;
Described second glue-line covers the top of described first glue-line, and the refractive index of described second glue-line is less than the refractive index of first glue-line.
Further, the refractive index of described first glue-line is less than the refractive index of described led chip.
Described second glue-line is the fluorescent material mixed layer.
Perhaps, described first glue-line is the fluorescent material mixed layer.
In a kind of execution mode, the upper surface of described second glue-line is the sphere of projection.
The profile of described support and reflection cavity all is circular.
Perhaps, the upper surface of described second glue-line is the plane concordant with the top of described reflection cavity.
The internal face of described reflection cavity and bottom surface form the obtuse angle.
Described led chip is a blue chip.
Perhaps, described led chip is the purple light chip.
The beneficial effects of the utility model are: in the LED packaged type of the present utility model, in the reflection cavity of led support, fill first glue-line and second glue-line that refractive index reduces successively, convex lens optically focused effect in conjunction with first glue-line, the utility model has significantly reduced the total reflection phenomenon when luminous energy enters different medium, light reflection and thermal losses have been reduced, thereby effectively improved the external quantum efficiency of LED, strengthened the brightness of LED.
Description of drawings
Fig. 1 is the LED profile of a kind of embodiment of the utility model;
Fig. 2 is the LED profile of the another kind of embodiment of the utility model.
Embodiment
In conjunction with the accompanying drawings the utility model is described in further detail below by embodiment.
Please refer to Fig. 1, the LED of present embodiment comprises support 1, led chip 2 etc., has reflection cavity on the support 1, and reflection cavity has the internal face of inclination, forms the obtuse angle with the bottom surface, and led chip 2 is fixed on the bottom of reflection cavity.According to different application scenarioss, the contour shape of support 1 is square or circular, and correspondingly, the contour shape of reflection cavity also is square or circular.Led chip 2 is blue chip or purple light chip, draws positive and negative electrode by two gold threads 6, and is connected on two pins 5 that expose support 1.
Fill first glue-line 3 and second glue-line 4 in the reflection cavity of present embodiment LED, first glue-line 3 covers the top of led chip 2, second glue-line 4 covers the top of first glue-line 3, the refractive index of second glue-line 4 is less than the refractive index of first glue-line 3, and the refractive index of first glue-line 3 is less than the refractive index of led chip 2.The course of processing of present embodiment LED comprises injecting glue twice, injects the bigger transparent glue of refractive index for the first time, makes it cover led chip 2 fully, forms first glue-line 3 of lens-shaped; The transparent glue that the refractive index of then reinjecting is less makes its remaining space that is full of reflection cavity, forms second glue-line 4.First glue-line 3 and second glue-line 4 all adopt resin or silica gel material.
Because the refractive index of led chip 2, first glue-line 3, second glue-line 4 and air reduces successively, the luminous energy that sends after led chip 2 energisings at first sees through the bigger chip medium of refractive index, major part is all injected the less hemisphere of refractive index first glue-line 3, then utilize the optically focused principle of convex lens, make the arc-shaped interface of point-source of light between first glue-line 3 and second glue-line 4, as far as possible divergently enter the second littler glue-line 4 of refractive index, inject air at last.Because the refractive index of light propagation medium reduces successively, increased between first glue-line 3 and second glue-line 4, at the interface the angle of total reflection between air and second glue-line 4, reduced the heat that light reflection and optical loss produce, effectively increase luminous energy output, improved external quantum efficiency and the brightness of LED.Further,, strengthened light scattering effect, can improve the luminous uniformity of LED because first glue-line 3 has the dome shape exiting surface.
The upper surface of second glue-line 4 can be the plane, and concordant with the top of reflection cavity, and for example the LED of this encapsulating structure can be applicable to LED backlight field; In the another kind of execution mode, the upper surface of second glue-line 4 also can be arranged to the sphere of projection, the LED of this encapsulating structure can be applicable to have circular support, the great power LED of circular reflection cavity.
For white light LEDs, but in first glue-line 3 or second glue-line 4 also mixed fluorescent powder form the fluorescent material mixed layer, be used for synthesize white light under the exciting of led chip 2.According to different application scenarioss and user demand, can select fluorescent material is blended in different glue-lines, for example shown in Figure 1, when second glue-line 4 was the fluorescent material mixed layer, fluorescent material distance L ED chip 2 was far away, so the reliability of LED is higher relatively; For example shown in Figure 2, when first glue-line 3 is the fluorescent material mixed layer, can more effectively improve white light LEDs brightness.
Above content be in conjunction with concrete execution mode to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection range of the present utility model.

Claims (10)

1. light-emitting diode that improves external quantum efficiency, the support that comprises led chip and have reflection cavity, described led chip is fixed on the bottom of described reflection cavity, it is characterized in that, fills first glue-line and second glue-line in the described reflection cavity;
First glue-line covers on the led chip, and the upper surface of described first glue-line is the sphere of projection;
Second glue-line covers the top of described first glue-line, and the refractive index of described second glue-line is less than the refractive index of first glue-line.
2. light-emitting diode as claimed in claim 1 is characterized in that the refractive index of described first glue-line is less than the refractive index of described led chip.
3. light-emitting diode as claimed in claim 2 is characterized in that, described second glue-line is the fluorescent material mixed layer.
4. light-emitting diode as claimed in claim 2 is characterized in that, described first glue-line is the fluorescent material mixed layer.
5. as each described light-emitting diode in the claim 1 to 4, it is characterized in that the upper surface of described second glue-line is the sphere of projection.
6. light-emitting diode as claimed in claim 5 is characterized in that, the profile of described support and reflection cavity all is circular.
7. as each described light-emitting diode in the claim 1 to 4, it is characterized in that the upper surface of described second glue-line is the plane concordant with the top of described reflection cavity.
8. as each described light-emitting diode in the claim 1 to 4, it is characterized in that the internal face of described reflection cavity and bottom surface form the obtuse angle.
9. as each described light-emitting diode in the claim 1 to 4, it is characterized in that described led chip is a blue chip.
10. as each described light-emitting diode in the claim 1 to 4, it is characterized in that described led chip is the purple light chip.
CN2010201993979U 2010-05-21 2010-05-21 Light emitting diode capable of increasing external quantum efficiency Expired - Lifetime CN201796947U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201993979U CN201796947U (en) 2010-05-21 2010-05-21 Light emitting diode capable of increasing external quantum efficiency

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Application Number Priority Date Filing Date Title
CN2010201993979U CN201796947U (en) 2010-05-21 2010-05-21 Light emitting diode capable of increasing external quantum efficiency

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CN201796947U true CN201796947U (en) 2011-04-13

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104953010A (en) * 2012-10-30 2015-09-30 四川新力光源股份有限公司 LED light emitting module
CN110265530A (en) * 2014-01-29 2019-09-20 亮锐控股有限公司 The superficial reflex device cup for phosphor-converted LED filled with sealant
CN110534628A (en) * 2018-05-24 2019-12-03 光宝光电(常州)有限公司 Light emitting device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104953010A (en) * 2012-10-30 2015-09-30 四川新力光源股份有限公司 LED light emitting module
CN110265530A (en) * 2014-01-29 2019-09-20 亮锐控股有限公司 The superficial reflex device cup for phosphor-converted LED filled with sealant
CN110534628A (en) * 2018-05-24 2019-12-03 光宝光电(常州)有限公司 Light emitting device and its manufacturing method

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CX01 Expiry of patent term

Granted publication date: 20110413

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