CN104953010A - LED light emitting module - Google Patents
LED light emitting module Download PDFInfo
- Publication number
- CN104953010A CN104953010A CN201510353160.9A CN201510353160A CN104953010A CN 104953010 A CN104953010 A CN 104953010A CN 201510353160 A CN201510353160 A CN 201510353160A CN 104953010 A CN104953010 A CN 104953010A
- Authority
- CN
- China
- Prior art keywords
- led chip
- powder layer
- led
- phosphor powder
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 80
- 238000004806 packaging method and process Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 54
- 238000005538 encapsulation Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 36
- 239000004033 plastic Substances 0.000 claims description 19
- 241000218202 Coptis Species 0.000 claims description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 7
- 238000009877 rendering Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 229920000297 Rayon Polymers 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract 4
- 230000001070 adhesive effect Effects 0.000 abstract 4
- 230000000694 effects Effects 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- QHZSDTDMQZPUKC-UHFFFAOYSA-N 3,5-dichlorobiphenyl Chemical compound ClC1=CC(Cl)=CC(C=2C=CC=CC=2)=C1 QHZSDTDMQZPUKC-UHFFFAOYSA-N 0.000 description 10
- 229920002379 silicone rubber Polymers 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000011257 shell material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004643 material aging Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED light emitting module. The LED light emitting module comprises a substrate, LED chip modules and a fluorescent powder layer and is characterized in that the LED chip modules and the fluorescent powder layer are located on the substrate and are mutually spaced, wherein a packaging adhesive with a refractive index between refractive indexes of LED chips and the fluorescent powder layer is arranged in a packaging groove in the substrate and between the fluorescent powder layer and the LED chip modules in a filling manner, so that the refractive index of an LED packaging device to all media in the sequence of the LED chips, the packaging adhesive, the fluorescent powder layer and air is gradually reduced. The packaging adhesive is filled, the light is emitted by passing the LED chips, a filling medium, namely the packaging adhesive, the fluorescent powder layer and the air; the refractive index of the LED packaging device to all media in the sequence of the LED chips, the packing medium, the fluorescent powder layer and air is gradually reduced, so that the light emitting efficiency is increased, and the lighting effect of the LED light emitting module is improved.
Description
The divisional application that the present invention is original applying number is 201210424512.1, former denomination of invention is LED device, original application day is on October 30th, 2012.
Technical field
The present invention relates to LED technology, particularly a kind of LED device.
Background technology
In recent years, rapidly, it, with advantages such as energy-saving and environmental protection, life-span length, occupies whole illumination market gradually, is called as 21 century a new generation's light source in white light LEDs development.The implementation of white light LEDs mainly contains three kinds, comprises ultraviolet leds chip+RGB fluorescent material, RGBLED chip portfolio emits white light and blue-light LED chip+yellow fluorescent powder.Wherein, blue light yellow fluorescence powder craft is simple, technology maturation, is adopted by numerous encapsulation producer.As everyone knows, affecting the key factor in large power white light LED reliability and life-span is at present heat dissipation problem, and the derivation of heat is crucial, because LED heating can make fluorescent material sedimentation very fast, causes the decline of the drift of LED look and luminous flux.Therefore, how to prevent the rapid subsidence of fluorescent material from mainly containing two aspects: to strengthen heat-sinking capability and optimized packaging structure.
For blue-light LED chip+yellow fluorescent powder, its encapsulation main process comprises die bond, plants line, sealing, test, packaging.Wherein, sealing process is that fluorescent material and packaging plastic Homogeneous phase mixing are also directly coated on LED chip by the mode of some glue or overlay film, and fluorescent material is directly contacted with LED chip.The limitation of which is mainly that the heat of LED chip causes the rapid subsidence of fluorescent material, easily produces look drift, affects photochromic consistency.
Therefore, exist in prior art and the heat radiation due to LED chip can be avoided better to cause the rapid subsidence of fluorescent material to a kind of, cause the needs of the LED device of look drift and photochromic conforming problem.
Chinese patent CN101452985A discloses a kind of encapsulating structure utilizing fluorescent powder film to prepare white light emitting diode, mainly comprise light-emitting diode (LED) chip, encapsulating package, packaging silicon rubber and fluorescent powder film, it is characterized in that, LED chip is mounted in encapsulating package, LED chip is first coated by one deck packaging silicon rubber, then be prepared and the fluorescent powder film be cut into for encapsulating required size covers, and is finally covered by the packaging silicon rubber of required lens shape.
According to the content of the specification of this patent,
its technical problem solved is:how to solve before and after the solidification of LED in encapsulation process because fluorescent material precipitates the excessive problem of the performance inconsistency that causes.
its technological means adopted is:lED chip is first coated by one deck packaging silicon rubber, be then prepared and be cut into fluorescent powder film for encapsulating required size and cover, finally covered by the packaging silicon rubber of required lens shape; By exchanging the fluorescent powder film of previously prepared good different parameters until the color quality that meets the demands.
This patent and the present invention distinct: can fill twice packaging silicon rubber in encapsulation process, the packaging silicon rubber 9 of nexine is by coated for LED chip 7, and outer envelope silica gel 9 is by coated for fluorescent powder film 6 (referring to Fig. 3 to 5 of documents 1).Like this, the light that LED chip 7 sends can through nexine packaging silicon rubber 9, fluorescent powder film 6 and outer envelope silica gel 9 when outgoing, until arrive air.Light the refractive index of each medium of process be little → large → little → air, this can cause the reflection of light or total reflection thus affect light extraction efficiency.Therefore, the technical scheme that this patent adopts not only does not disclose difference technical characteristic of the present invention, even gives the enlightenment of antipodal technology.
Further, the encapsulation process of this patent needs the previously prepared fluorescent powder film well with different parameters, by constantly testing, exchanging, test process to meet color quality, greatly can increase the operation of encapsulation process like this thus cause the reduction of production efficiency.Further, because outer envelope silica gel 9 is by coated for fluorescent powder film 6, therefore this patent can only realize regulating the indexs such as colour temperature by exchanging fluorescent powder film in production encapsulation process.
Completely different with it, the technical problem that the present invention solves is: the light extraction efficiency how improving LED chip when simplifying encapsulation process, in use can carry out the adjustment of colour temperature, color rendering index and/or brightness easily simultaneously.The present invention can realize in use carrying out easily the adjustment of colour temperature, color rendering index and/or brightness, eliminates the technique of fluorescent material allotment in encapsulation operation, and need not twice packaging silicon rubber, because this simplify encapsulation process, improves production efficiency.
This patent is different from the technical problem that the present invention solves, and the technological means of technical solution problem is completely different.Therefore, this patent does not have technology to enlighten to the present invention.
Summary of the invention
The object of this invention is to provide a kind of LED device, wherein, phosphor powder layer and LED chip are kept apart.
According to embodiments of the invention, provide a kind of LED device, comprise substrate, LED chip module and phosphor powder layer, it is characterized in that, described LED chip module and phosphor powder layer to be positioned on substrate and to be spaced from each other.
Wherein, the spacing distance of described LED chip module and phosphor powder layer is at 0.5mm-50mm.
Wherein, the spacing distance of described LED chip module and phosphor powder layer is at 2-3mm.
Wherein, described substrate is provided with encapsulation groove, LED chip module is positioned on the bottom surface of described encapsulation groove, and described phosphor powder layer is positioned on the step away from the peristome of described encapsulation groove bottom.
Wherein, described encapsulation groove is circular recess.
Wherein, the region bottom surface of described encapsulation groove not being provided with LED chip module is furnished with flexible PCB, and described LED chip module is electrically connected by gold thread with flexible PCB.
Wherein, between described phosphor powder layer and LED chip module, packaging plastic is filled with in the encapsulation groove of described substrate.
Wherein, described packaging plastic is the organic siliconresin of refractive index between LED chip and the refractive index of phosphor powder layer or organosilicon.
Wherein, described substrate is aluminium base, copper base or ceramic substrate.
Wherein, described phosphor powder layer mixes by predetermined weight ratio uniform with packaging plastic via by fluorescent material, puts and also solidify on the filler of melting and make after carrying out vacuum defoamation.
Wherein, described phosphor powder layer has the photoresists suspension containing fluorescent material of interior foreign minister via applying one deck on the filler of solidification, and is made by the mode of chip constant current from exposure after naturally drying up in darkroom.
Wherein, described phosphor powder layer is made on film, PC or glass shell via by fluorescent powder jet printing, or is processed into by being directly doped in film or shell material by fluorescent material.
According to embodiments of the invention, because LED chip and phosphor powder layer keep at a certain distance away, therefore the heat that sends of LED chip is before touching phosphor powder layer, and most of heat substrate distributes.Correspondingly, the heat that phosphor powder layer is subject to reduces, thus decreases the sedimentation of fluorescent material.Therefore, application of the present invention avoids the heat radiation due to LED chip to cause the rapid subsidence of fluorescent material better, thus produces look drift, affects photochromic conforming problem.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.Apparently, the accompanying drawing in below describing is only some embodiments of the present invention, for those of ordinary skills, can also obtain other embodiment and accompanying drawing thereof according to these accompanying drawing illustrated embodiments.
Fig. 1 is the structural representation of the LED device of one embodiment of the present of invention;
Fig. 2 is the structural representation of the LED device of an alternative embodiment of the invention.
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, to develop simultaneously embodiment referring to accompanying drawing, the present invention is described in more detail.
LED device according to an embodiment of the invention, substrate is provided with encapsulation groove, multiple LED chip module is arranged on the bottom surface of encapsulation groove of substrate, the part that the encapsulation groove bottom of substrate is not provided with LED chip module is provided with flexible PCB, and flexible PCB is connected by gold thread with LED chip module.Peristome away from substrate package groove bottom is provided with support level, and phosphor powder layer is placed on step, and spaced apart with LED chip module.Because LED chip and phosphor powder layer keep at a certain distance away, therefore the heat that sends of LED chip is before touching phosphor powder layer, and most of heat substrate distributes.Correspondingly, the heat that phosphor powder layer is subject to reduces, thus decreases the sedimentation of fluorescent material.Therefore, application of the present invention avoids the heat radiation due to LED chip to cause the rapid subsidence of fluorescent material better, thus produces look drift, affects photochromic conforming problem.
See Fig. 1, show the structural representation of LED device according to an embodiment of the invention.As shown in Figure 1, LED device comprises substrate 10, LED chip module 12, flexible PCB 14, encapsulation groove 16 and phosphor powder layer 18.Encapsulation groove 16 is provided with in substrate 10.The bottom surface of encapsulation groove 16 is furnished with LED chip module 12.LED chip module is the LED chip module obtained by die bond, kind Wiring technology.LED chip module can be blue-light LED chip module, yellow light LED chip module etc.The region that the bottom surface of encapsulation groove 16 is not provided with LED chip module 12 is provided with flexible PCB 14.LED chip module 12 is fixed to the bottom surface of encapsulation groove 16 by some glue.Preferably, encapsulating groove 16 is circular recesss.Alternatively, the groove that groove 16 also can be other shapes such as rectangular channel is encapsulated.Each LED chip module 12 is connected to flexible PCB 14 through gold thread.Particularly, one end of gold thread is welded on flexible PCB 14, and the other end is welded to LED chip module 12.
Peristome away from encapsulation groove 16 bottom surface is provided with support level 20.Phosphor powder layer 18 is placed on support level 20.Distance between LED chip module and phosphor powder layer is between 0.5mm-50mm.Preferably, the distance between LED chip module and phosphor powder layer is 2-3mm.
In this embodiment, without any medium between phosphor powder layer 18 and LED chip module 12, be namely air insulated between phosphor powder layer 18 and LED chip module 12.Owing to there is air between phosphor powder layer 18 and LED chip module 12, after light sends from LED chip, enter into the air dielectric between LED chip module and phosphor powder layer 18, and then enter into phosphor powder layer 18, finally again enter into air dielectric from phosphor powder layer 18.Visible, in the present embodiment, the light sent from LED chip experienced by the close material → light of light and dredges the propagation that the close material → light of material → light dredges material.Light is dredged substance process from the close material of light to light and is had some light and reflect, and photon can not be derived from medium cause energy ezpenditure, thus affects light efficiency.Therefore, the present embodiment can be applied to for light efficiency requirement is not very high occasion.
See Fig. 2, show the structural representation of LED device according to another embodiment of the invention.As shown in Figure 2, LED device comprises substrate 10, LED chip module 12, flexible PCB 14, encapsulation groove 16 and phosphor powder layer 18.Encapsulation groove 16 is provided with in substrate 10.The bottom surface of encapsulation groove 16 is furnished with LED chip module 12.LED chip module is the LED chip module obtained by die bond, kind Wiring technology.LED chip module can be blue-light LED chip module, yellow light LED chip module etc.The region that the bottom surface of encapsulation groove 16 is not provided with LED chip module 12 is provided with flexible PCB 14.LED chip module 12 is fixed to the bottom surface of encapsulation groove 16 by some glue.Preferably, encapsulating groove 16 is circular recess or rectangular channel.Each LED chip module 12 is connected to flexible PCB 14 through gold thread.Particularly, one end of gold thread is welded on flexible PCB 14, and the other end is welded to LED chip module 12.In this embodiment, on the bottom surface that LED chip module and flexible PCB 14 are fixed to encapsulation groove 16 and after gold thread being connected flexible PCB 14 and LED chip module 12, in encapsulation groove 16, fill packaging plastic and packaging plastic is solidified.Packaging plastic can be organic siliconresin and organosilicon.As the organic siliconresin refractive index of packaging plastic between LED chip and the refractive index of phosphor powder layer.If do not fill glue, the refractive index difference between LED chip and air is larger than the refractive index difference between LED chip and packaging plastic, and so same light can few than from LED chip to packaging plastic outgoing to the amount of air outgoing from LED chip.Owing to being filled with packaging plastic, the exit path of light is from LED chip → filled media and packaging plastic → phosphor powder layer → air.Because LED is from chip, be reduce gradually to filled media, phosphor powder layer, the refractive index that arrives each medium of air again, therefore light extraction efficiency is increased, thus have submitted the light efficiency of LED device.
Peristome away from encapsulation groove 16 bottom surface is provided with support level 20.After having filled packaging plastic, phosphor powder layer 18 has been placed on support level 20.Distance between LED chip module and phosphor powder layer is between 0.5mm-50mm.Preferably, the distance between LED chip module and phosphor powder layer is 2-3mm.
According to the present invention, preferably, substrate is aluminium base, copper base or ceramic substrate.
In embodiments of the invention, the production method for phosphor powder layer has three kinds of modes.
Point glue mode makes phosphor powder layer
Fluorescent material and such as organic siliconresin or organosilyl packaging plastic are blended in container in predetermined weight ratio, stir, then put on the filler of melting after vacuum defoamation, and solidify, reach desirable Photochromic Properties.In the homogeneous mixture that organic siliconresin or organosilicon and fluorescent material are formed, the number of fluorescent material amount directly determines the height of colour temperature.For the product of different-colour, the ratio of fluorescent material and packaging plastic is different.Packaging plastic and fluorescent material part by weight are at 8:1 to 25:1.
Fluorescent material paint-on technique makes phosphor powder layer
Filler after hardening applies the photoresists suspension containing fluorescent material that one deck has interior foreign minister, naturally dry up in darkroom, then by the mode of chip constant current from exposure, control the time for exposure, obtain uniform phosphor powder layer.Described photoresists suspension to be mass fraction be 0.1% the sensitising agent aqueous solution.The LED light look consistency that this mode obtains is better.
The production method of fluorescent powder film and fluorescent material shell
Fluorescent powder jet printing on film or the shell such as PC, glass, also directly fluorescent material can be doped in various film or shell material and be processed into, the film or shell being mixed with fluorescent material is fixed by viscose glue or mechanical system.The advantage of this making phosphor powder layer is to carry out replacing dismounting to fluorescent powder membrane or fluorescence shell, the adjustment of colour temperature, color rendering index, brightness is carried out when not changing illuminating module, this mode is easy to use, cost-saving, and the technique of fluorescent material allotment is eliminated in encapsulation operation, simplify encapsulation process, enhance productivity.
Be more than the mode that phosphor powder layer and LED core lamella are isolated, reliability and the life-span of LED can be improved.Because LED chip and phosphor powder layer keep at a certain distance away, therefore the heat that sends of LED chip is before touching phosphor powder layer, and most of heat substrate distributes.Therefore, application of the present invention avoids the heat radiation due to LED chip to cause the rapid subsidence of fluorescent material better, thus produces look drift, affects photochromic conforming problem.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a LED illuminating module, comprises substrate, LED chip module and phosphor powder layer, it is characterized in that, described LED chip module and phosphor powder layer to be positioned on substrate and to be spaced from each other,
Wherein, in the encapsulation groove of described substrate and between described phosphor powder layer and LED chip module, be filled with the packaging plastic of refractive index between LED chip and the refractive index of phosphor powder layer, make described LED device from described LED chip to packaging plastic, phosphor powder layer, to reduce gradually to the refractive index of each medium of air again.
2. LED illuminating module as claimed in claim 1, it is characterized in that, described phosphor powder layer is by the mode of fluorescent powder jet printing on the shell of film or PC or glass is processed into, or described phosphor powder layer be by fluorescent material the mode be doped in the raw material of film or shell be processed into; The film or the shell that are mixed with fluorescent material are fixed by viscose glue or mechanical system, make fluorescent powder membrane or the dismounting of fluorescent material replaceable casing, thus carry out the adjustment of colour temperature, color rendering index and/or brightness when not changing LED chip module.
3. LED illuminating module as claimed in claim 1, it is characterized in that, the peristome away from bottom surface of described encapsulation groove is provided with the support level for LED chip module described in interval and described phosphor powder layer.
4. LED illuminating module as claimed in claim 3, it is characterized in that, described LED chip module is arranged on the bottom surface of described encapsulation groove, and described phosphor powder layer is positioned on the step away from the peristome of described encapsulation groove bottom.
5. LED illuminating module as claimed in claim 4, is characterized in that, the flexible PCB that the bottom surface of described encapsulation groove is arranged in the part not arranging described LED chip module is connected by gold thread with described LED chip module.
6. LED illuminating module as claimed in claim 1, it is characterized in that, the spacing distance between described LED chip and described phosphor powder layer is between 0.5 ~ 50mm.
7. LED illuminating module as claimed in claim 6, it is characterized in that, the spacing distance between described LED chip and described phosphor powder layer is between 2 ~ 3mm.
8. the LED illuminating module as described in one of claim 1 to 7, is characterized in that, described encapsulation groove is circular recess or the rectangular channel of the sidewall being provided with angle of inclination.
9. the LED illuminating module as described in one of claim 1 to 7, is characterized in that, described substrate is aluminium base, copper base or ceramic substrate.
10. the LED illuminating module as described in one of claim 1 to 7, is characterized in that, described packaging plastic is organic siliconresin and organosilicon.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210424512.1A CN102891242B (en) | 2012-10-30 | 2012-10-30 | LED device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210424512.1A Division CN102891242B (en) | 2012-10-30 | 2012-10-30 | LED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104953010A true CN104953010A (en) | 2015-09-30 |
Family
ID=47534693
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210424512.1A Active CN102891242B (en) | 2012-10-30 | 2012-10-30 | LED device |
| CN201510353160.9A Pending CN104953010A (en) | 2012-10-30 | 2012-10-30 | LED light emitting module |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210424512.1A Active CN102891242B (en) | 2012-10-30 | 2012-10-30 | LED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102891242B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107591395A (en) * | 2017-10-07 | 2018-01-16 | 谭瑞银 | Simple led |
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN112582385A (en) * | 2020-12-10 | 2021-03-30 | 高创(苏州)电子有限公司 | Blue light LED packaging structure, backlight module and display device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236483A (en) * | 2013-03-15 | 2013-08-07 | 达亮电子（苏州）有限公司 | Light emitting diode encapsulation structure and light emitting diode encapsulation method |
| CN103489857B (en) * | 2013-09-06 | 2017-06-06 | 中山市天健照明电器有限公司 | A kind of White LED light-emitting device |
| CN103928592A (en) * | 2014-04-23 | 2014-07-16 | 东南大学 | White LED packaging structure capable of reducing color temperature drifting and manufacturing method of white LED packaging structure |
| CN111240093A (en) * | 2020-03-04 | 2020-06-05 | 深圳创维－Rgb电子有限公司 | Light source module, lamp strip and TV set |
| CN113054085A (en) * | 2020-04-22 | 2021-06-29 | 深圳市聚飞光电股份有限公司 | LED illuminating part and illuminating device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
| CN101725850A (en) * | 2008-10-21 | 2010-06-09 | 东芝照明技术株式会社 | Lighting device |
| CN201764319U (en) * | 2010-08-27 | 2011-03-16 | 柏年春 | LED (light emitting diode) surface light source and LED luminaire |
| CN201796947U (en) * | 2010-05-21 | 2011-04-13 | 深圳市聚飞光电股份有限公司 | Light emitting diode capable of increasing external quantum efficiency |
| CN102074641A (en) * | 2010-07-23 | 2011-05-25 | 宁波市瑞康光电有限公司 | LED packaging method, LED and LED illuminating device |
| CN102468403A (en) * | 2010-11-18 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure |
| CN102496672A (en) * | 2011-12-22 | 2012-06-13 | 日月光半导体制造股份有限公司 | LED packaging structure and manufacturing method thereof |
| CN202473911U (en) * | 2011-12-23 | 2012-10-03 | 惠州市华阳多媒体电子有限公司 | LED device capable of raising light extraction efficiency |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101490862B1 (en) * | 2008-09-23 | 2015-02-09 | 주식회사 아모센스 | LED package and method of manufacturing the LED package |
| CN101452985A (en) * | 2008-12-31 | 2009-06-10 | 广东昭信光电科技有限公司 | Encapsulation structure and method for white light emitting diode device |
| CN101661987A (en) * | 2009-09-15 | 2010-03-03 | 中山大学 | White light LED packaging structure and packaging method thereof |
| CN101826590B (en) * | 2010-04-20 | 2013-11-13 | 北京朗波尔光电股份有限公司 | LED lamp with lens injected with fluorescent glue and packaging method thereof |
| CN201868472U (en) * | 2010-11-08 | 2011-06-15 | 大连路明发光科技股份有限公司 | Chip and powder separated light-emitting module for manufacture of high-power LEDs |
| CN202058732U (en) * | 2011-03-11 | 2011-11-30 | 义乌市菲莱特电子有限公司 | High-power LED (light-emitting diode) white light panel with separated chip and fluorescent powder |
| CN202094175U (en) * | 2011-06-14 | 2011-12-28 | 易美芯光（北京）科技有限公司 | Far fluorescent powder LED encapsulating structure |
| CN203026550U (en) * | 2012-10-30 | 2013-06-26 | 四川新力光源股份有限公司 | LED packaging device |
-
2012
- 2012-10-30 CN CN201210424512.1A patent/CN102891242B/en active Active
- 2012-10-30 CN CN201510353160.9A patent/CN104953010A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
| CN101725850A (en) * | 2008-10-21 | 2010-06-09 | 东芝照明技术株式会社 | Lighting device |
| CN201796947U (en) * | 2010-05-21 | 2011-04-13 | 深圳市聚飞光电股份有限公司 | Light emitting diode capable of increasing external quantum efficiency |
| CN102074641A (en) * | 2010-07-23 | 2011-05-25 | 宁波市瑞康光电有限公司 | LED packaging method, LED and LED illuminating device |
| CN201764319U (en) * | 2010-08-27 | 2011-03-16 | 柏年春 | LED (light emitting diode) surface light source and LED luminaire |
| CN102468403A (en) * | 2010-11-18 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure |
| CN102496672A (en) * | 2011-12-22 | 2012-06-13 | 日月光半导体制造股份有限公司 | LED packaging structure and manufacturing method thereof |
| CN202473911U (en) * | 2011-12-23 | 2012-10-03 | 惠州市华阳多媒体电子有限公司 | LED device capable of raising light extraction efficiency |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107591395A (en) * | 2017-10-07 | 2018-01-16 | 谭瑞银 | Simple led |
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN112582385A (en) * | 2020-12-10 | 2021-03-30 | 高创(苏州)电子有限公司 | Blue light LED packaging structure, backlight module and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102891242A (en) | 2013-01-23 |
| CN102891242B (en) | 2015-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104953010A (en) | LED light emitting module | |
| JP3091911U (en) | Hybrid LED | |
| KR101251821B1 (en) | Light emitting device package | |
| CN208284498U (en) | A kind of LED component, backlight lamp bar and backlight module | |
| JP3164267U (en) | Lighting module | |
| CN100411210C (en) | White light LED and packaging method thereof | |
| CN103534822A (en) | Light emitting device and method for manufacturing same | |
| JP2005033211A (en) | Light emitting diode utilizing discrete wavelength-converting layer for color conversion | |
| CN107077028A (en) | Substrate, its manufacture method and the display device including it changed for color | |
| CN202094175U (en) | Far fluorescent powder LED encapsulating structure | |
| CN107665940A (en) | Light-emitting device and its manufacture method | |
| CN103081567A (en) | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration | |
| CN109713110A (en) | Wafer-level package LED and preparation method thereof | |
| CN108091752A (en) | A kind of white light LEDs and preparation method thereof | |
| CN102130282A (en) | Packaging structure and packaging method for white LED (light-emitting diode) | |
| CN102714264B (en) | Light emission diode package member and manufacture method thereof | |
| CN203026550U (en) | LED packaging device | |
| CN103325926B (en) | LED packaging structure used in on-board chip and fluorescent powder coating method thereof | |
| CN208284497U (en) | A kind of LED component, backlight lamp bar and backlight module | |
| CN102282687B (en) | Led packaging enabling light emitting with uniform colors | |
| JP2007220737A (en) | Light emitting device | |
| CN105870294A (en) | Packaging method and structure of high-power LED | |
| EP4016649A1 (en) | Light-emitting device and manufacturing method, and display screen and lighting equipment comprising said light-emitting device | |
| CN105280789A (en) | Quantum dot LED | |
| CN104218139A (en) | Novel LED package structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150930 |
|
| RJ01 | Rejection of invention patent application after publication |